KR102000023B1 - Substrate treating apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a substrate supporting member for supporting a substrate to be processed; A rotation drive member for rotating the substrate support member; A container provided to surround the periphery of the substrate supporting member; A processing liquid supply unit located at one side of the substrate supporting member and capable of moving a portion where the first nozzle and the second nozzle are located; And an atmospheric port positioned at one side of the vessel and having an upper surface stepped to allow the second nozzle separated from the treatment liquid supply unit to be located.

Description

[0001] DESCRIPTION [0002] Substrate treating apparatus [

The present invention relates to a substrate processing apparatus.

Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. The photolithography process performed to form the pattern plays an important role in achieving the high integration of the semiconductor device.

The above processes are performed by supplying the chemical liquids to the substrate. Further, the nozzle for supplying the chemical liquid can be replaced if necessary.

The present invention is to provide a substrate processing apparatus having a standby port in which a nozzle can be located.

Further, the present invention is intended to provide a substrate processing apparatus in which the processing liquid supply unit can be simply configured.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a substrate supporting member for supporting a substrate to be processed; A rotation drive member for rotating the substrate support member; A container provided to surround the periphery of the substrate supporting member; A processing liquid supply unit located at one side of the substrate supporting member and capable of moving a portion where the first nozzle and the second nozzle are located; And an atmospheric port positioned at one side of the vessel, the upper surface of which is separated from the treatment liquid supply unit and on which the second nozzle can be positioned.

Further, the upper surface of the atmospheric port may be formed so as to be stepped so as to become higher as it moves away from the container.

In addition, a plurality of the atmospheres to which the second nozzle separated from the treatment liquid supply unit can be positioned, respectively, may be formed on the stepped upper surface of the atmospheric port.

The processing liquid supply unit may further include: a nozzle arm having the first nozzle and the second nozzle at one end thereof; A nozzle arm supporting member connected to the other end of the nozzle arm; And a guide member for guiding the linear movement of the nozzle arm supporting member.

In addition, the plurality of waiting portions may be arranged in a straight line along a locus in which the portion of the nozzle arm to which the second nozzle is coupled may be moved.

The processing liquid supply unit may further include: a nozzle arm having the first nozzle and the second nozzle at one end thereof; A nozzle arm supporting member connected to the other end of the nozzle arm; And a driving member connected to the nozzle arm supporting member and rotating the nozzle arm supporting member.

In addition, the plurality of waiting units may be arcuately arranged along a locus where the portion of the nozzle arm to which the second nozzle is coupled may be moved.

The first nozzle may be positioned on the opposite side of the atmospheric port with respect to the second nozzle.

The distance between the first nozzle and the second nozzle located in the treatment liquid supply unit may be greater than the horizontal distance between the adjacent ones of the atmospheres plus the diameter of the second nozzle .

The difference in height of the stepped adjacent ones of the upper surfaces may be provided so that the first nozzle and the second nozzle located at the atmospheres are spaced apart when the first nozzle and the second nozzle descend.

According to one embodiment of the present invention, a substrate processing apparatus having an atmospheric port through which a nozzle can be positioned can be provided.

Further, according to an embodiment of the present invention, a substrate processing apparatus in which the processing liquid supply unit can be simply configured can be provided.

1 is a top view of the substrate processing apparatus.
Fig. 2 is a view of the facility of Fig. 1 viewed from the direction AA.
Fig. 3 is a view of the equipment of Fig. 1 viewed from the BB direction.
Fig. 4 is a view of the facility of Fig. 1 viewed from the CC direction; Fig.
5 is a top view of an application module according to one embodiment of the present invention.
Figure 6 is a side cross-sectional view of the application module of Figure 5;
7 is a perspective view of a standby port.
8 is a view showing a process of positioning the second nozzle at the standby port.
9 and 10 are views showing a process in which the second nozzle is coupled to the nozzle arm.
11 is a view illustrating a state in which a second nozzle located at a standby port according to another embodiment is coupled to a nozzle arm.
12 is a plan view of an application module according to another embodiment.
13 is a side cross-sectional view of the application module of Fig.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facility of this embodiment is used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the facilities of this embodiment are used to perform a coating process, a development process, and a pre- and post-exposure process required for the substrate before and after the immersion exposure. Hereinafter, a case where a wafer is used as a substrate will be described as an example.

1 to 4 are schematic views of a substrate processing apparatus according to an embodiment of the present invention. 1 is a plan view of the apparatus of FIG. 1 viewed from the direction AA, FIG. 3 is a view of the apparatus of FIG. 1 viewed from the BB direction, FIG. 4 is a view of the apparatus of FIG. 1 In the CC direction.

1 to 4, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500 An exposure pre- and post-processing module 600, an interface module 700, and a purge module 800. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction. The fuzzy module 800 may be provided at a position where the exposure apparatus 900 at the rear end of the interface module 700 is connected or at a side of the interface module 700 And can be provided in various positions.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The wafer W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, the interface module 700 ), And the fuzzy module 800 will be described in detail.

(Load port)

The load port 100 has a mounting table 120 on which a cassette 20 accommodating wafers W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 1, four placement tables 120 are provided.

(Index module)

The index module 200 transfers the wafer W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is a four-axis drive system in which the hand 221 directly handling the wafer W is movable in the first direction 12, the second direction 14 and the third direction 16, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

(First buffer module)

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of wafers W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 332. The housing 331 is configured such that the index robot 220, the first buffer robot 360 and the development robot 482 of the developing module 402 described later attach the wafer W to the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the wafer W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chambers 350 cool the wafers W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the wafer W is placed and a cooling means 353 for cooling the wafer W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the wafer W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 described later can carry the wafers W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

(Application and development module)

The coating and developing module 400 performs a process of applying a photoresist on the wafer W before the exposure process and a process of developing the wafer W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a step of applying a photosensitive liquid such as a photoresist to the wafer W and a heat treatment step such as heating and cooling for the wafer W before and after the resist application step. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, six resist coating chambers 410 are provided. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is connected to the bake chambers 420, the resist application chambers 400, the first buffer 320 of the first buffer module 300, and the first buffer module 500 of the second buffer module 500 And transfers the wafer W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the wafer W. [ The resist coating chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the wafer W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the photoresist onto the wafer W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply photoresist to the center of the wafer W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W coated with the photoresist.

The bake chamber 420 heat-treats the wafer W. For example, the bake chambers 420 may be formed by a prebake process in which the wafer W is heated to a predetermined temperature to remove organic matter and moisture on the surface of the wafer W before the photoresist is applied, A soft bake process is performed after coating the wafer W on the wafer W, and a cooling process for cooling the wafer W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process of supplying a developing solution to obtain a pattern on the wafer W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the wafer W before and after the developing process . The development module 5402 has a development chamber 460, a bake chamber 470, and a transfer chamber 480. The development chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 460 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six development chambers 460 are provided. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 470 are provided. Alternatively, however, the bake chamber 470 can be provided in greater numbers.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The development robot 482 is connected to the bake chambers 470 and the development chambers 460 and the second buffer 330 and the cooling chamber 350 of the first buffer module 300 and the second buffer module 500, The wafer W is transferred between the second cooling chambers 540 of the wafer W. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the wafer W irradiated with light. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is placed in the housing 461 and supports the wafer W. [ The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the wafer W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the wafer W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 463 may be provided as a slit. Further, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W to which the developer is supplied.

The bake chamber 470 heat-treats the wafer W. For example, the bake chambers 470 may include a post-bake process for heating the wafer W before the development process is performed, a hard bake process for heating the wafer W after the development process is performed, And a cooling step for cooling the wafer. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

(Second buffer module)

The second buffer module 500 is provided as a path through which the wafer W is transferred between the application and development module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the wafer W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the wafer W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the wafers W that have been processed in the application module 401. The first cooling chamber 530 cools the wafer W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the wafers W that have undergone the cooling process in the first cooling chamber 530. The buffer 520 temporarily stores the wafers W before the wafers W processed in the edge exposure chamber 550 are transferred to the preprocessing module 601 to be described later. The second cooling chamber 540 cools the wafers W before the wafers W processed in the post-processing module 602 described below are conveyed to the developing module 402. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the wafers W processed in the post-processing module 602 may be temporarily stored in the added buffer and then transferred to the developing module 402. [

(Pre-exposure post-processing module)

The pre- and post-exposure processing module 600 can process a process of applying a protective film for protecting the photoresist film applied to the wafer W during liquid immersion exposure when the exposure apparatus 900 performs the liquid immersion exposure process. Further, the pre- and post-exposure processing module 600 may perform a process of cleaning the wafer W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 processes the wafer W before the exposure process, and the post-processing module 602 processes the wafer W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film application chamber 610, a bake chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. The protective film application chamber 610 and the bake chamber 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application chambers 610 are provided and are arranged along the third direction 16 to form layers. Alternatively, a plurality of protective film application chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, a plurality of bake chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The wafer W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film applying chamber 610 applies a protective film for protecting the resist film on the wafer W during immersion exposure. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the wafer W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the wafer W placed on the support plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the wafer W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film application chamber 610 supplies the protective liquid to the central region of the wafer W while rotating the wafer W placed on the support plate 612.

The bake chamber 620 heat-treats the wafer W coated with the protective film. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake chamber 620, respectively. Optionally, some of the bake chambers 620 may have only the heating plate 622, while others may only have the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake chamber 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure baking chamber 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake chambers 670 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, post-exposure bake chambers 670, the second cooling chamber 540 of the second buffer module 500, and the second And carries the wafer W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the wafer W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the wafer W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the wafer W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the wafer W while rotating the wafer W placed on the support plate 662. The nozzle 663 can linearly or rotationally move from the central region to the edge region of the wafer W while the wafer W is selectively rotated.

The post-exposure baking chamber 670 heats the wafer W subjected to the exposure process using deep ultraviolet light. The post-exposure bake step heats the wafer W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake chamber having only the cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. Further, the protective film application chamber 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap with each other when viewed from above. Further, the bake chamber 620 and the post-exposure bake chamber 670 are provided in the same size, and can be provided so as to completely overlap each other when viewed from above.

(Interface module)

The interface module 700 transfers the wafer W between the exposure pre- and post-processing module 600, the purge module 800, and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the wafer W between the first buffer 720, the second buffer 730, the purge module 800 and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the wafers W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 900. [ The second buffer 730 temporarily stores the processed wafers W in the exposure apparatus 900 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the wafer W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. The interface module may be provided with only buffers and robots as described above without providing a chamber to perform a predetermined process on the wafer.

(Fuzzy module)

The purge module 800 may be disposed within the interface module 700. Specifically, the fuzzy module 800 may be disposed at a position facing the first buffer 720 around the interface robot 740. The fuzzy module 800 may be provided at various positions such as a position where the exposure apparatus 900 at the rear end of the interface module 700 is connected or a side of the interface module 700. [ The purge module 800 performs a gas purging process and a rinsing process on the wafer to which the protective film for protecting the photoresist is applied in the pre- and post-exposure processing module 600.

FIG. 5 is a plan view of the application module according to one embodiment of the present invention, and FIG. 6 is a side sectional view of the application module of FIG.

5 to 6, the application module 401 includes a substrate support member 4100, a process liquid supply unit 4300, and a standby port 4500. [

The substrate support member 4100 supports the substrate W. [ The substrate support member 4100 can be rotated while supporting the substrate W. [ The treatment liquid supply unit 4300 supplies the treatment liquid onto the substrate W placed on the substrate support member 4100 to treat the substrate W. [

The substrate supporting member 4100 supports the substrate W during the process, and is rotated by the rotation driving member 4120 such as a motor during the process. The substrate support member 4100 has a support plate 4140 having a circular upper surface and pin members 4160 supporting the substrate W are provided on the upper surface of the support plate 4140. The substrate W supported by the pin members 4160 is rotated as the substrate supporting member 4100 is rotated by the rotation driving member 4120. [

A container 4200 is disposed around the substrate support member 4100. The container 4200 has a generally cylindrical shape and an exhaust hole 4240 is formed in the lower wall 4220 and an exhaust pipe 4260 is connected to the exhaust hole 4240. An exhaust member 4280 such as a pump is connected to the exhaust pipe 4260 and the exhaust member 4280 is connected to the exhaust pipe 4280 so as to exhaust the air inside the container 4200 containing the process liquid scattered by the rotation of the substrate W, .

The treatment liquid supply unit 4300 supplies the treatment liquid to the upper surface of the substrate W placed on the substrate support member 4100. [ The treatment liquid supply unit 4300 has a nozzle arm 4320 provided on one side of the substrate supporting member 4100. [ A plurality of nozzles 4340 and 4360 may be mounted on the end of the nozzle arm 4320. The nozzles 4340 and 4360 may be arranged in a line on one end of the nozzle arm 4320 perpendicular to the longitudinal direction of the nozzle arm 4320. The nozzle arm 4320 can be disposed on one side of the substrate support member 4100 so that the arrangement direction of the nozzles 4340 and 4360 passes through the center of the substrate W placed on the substrate support member 4100. [

The second nozzle 4360 supplies the second processing liquid to the substrate W. [ For example, the second treatment liquid may be a photoresist. The second nozzle 4360 is detachably provided. The first nozzle 4340 can supply the first processing liquid to the substrate W before supplying the second processing liquid to the substrate W. [ The first treatment liquid may be an organic solvent supplied to the substrate W so as to improve the wettability of the photosensitive liquid. When the organic solvent is supplied before the photosensitive liquid is supplied onto the substrate W, the photosensitive liquid spreads uniformly on the substrate W, and a uniform photosensitive film can be formed on the substrate W. [

The organic solvent supplied from the second nozzle 4340 to the substrate W may be a thinner or the like.

The nozzle arm 4320 to which the plurality of nozzles 4340 and 4360 are mounted can be moved in an inclined direction with respect to the longitudinal direction of the nozzle arm 4320 by the driving member 4400. [ For example, the nozzle arm 4320 may be linearly moved by the driving member 4400 along the arrangement direction of the nozzles 4340 and 4360. The driving member 4400 includes a nozzle arm supporting member 4410 and a guide member 4420. A nozzle arm supporting member 4410 is coupled to the other end of the nozzle arm 4320. The nozzle arm supporting member 4410 may be provided in a rod shape arranged downward from one side of the nozzle arm 4320. The lower end of the nozzle arm support member 4410 is connected to the guide member 4420. [ The guide member 4420 is disposed on one side of the substrate support member 4100 so as to be perpendicular to the longitudinal direction of the nozzle arm 4320 on the plane arrangement structure of Fig. The guide member 4420 may be provided in a rail shape and guides the linear movement of the nozzle arm supporting member 4410. [ The nozzle arm support member 4410 may be provided with a variable length in the vertical direction.

The treatment liquid supply unit 4300 can be linearly moved by the driving member 4400 having the above-described configuration. The processing liquid supply unit 4300 is disposed between the processing position where the processing liquid can be supplied to the substrate W positioned in the substrate supporting member 4100 and the processing waiting position located outside the upper side of the substrate supporting member 4100 .

7 is a perspective view of a standby port.

5 to 7, the standby port 4500 is located outside the container 4200. [ The waiting port 4500 can be located in the second nozzle 4360, which can be mounted and used in the processing liquid supply unit 4300. [ The standby port 4500 is located below the path of movement of the end of the nozzle arm 4320.

The standby port 4500 is provided in the port body 4510 to form a plurality of standby units 4530. The upper surface of the port body 4510 is formed to be stepped. The upper surface of the port body 4510 will be described as a first standby surface 4521, a second standby surface 4522, and a third standby surface 4523 as an example. However, the number of top surfaces formed stepwise in the port body 4510 is not limited to this, and may be two, or four or more. Although the port body 4510 in which the first atmosphere surface 4521, the second atmosphere surface 4522 and the third atmosphere surface 4523 are formed is shown as being connected to each other, the first atmosphere surface 4521, A portion of the port body 4510 in which the second standby surface 4522 or the third standby surface 4523 is formed may be provided separately.

The first atmosphere surface 4521 is formed to be positioned below the second atmosphere surface 4522 and the second atmosphere surface 4522 is formed to be positioned below the third atmosphere surface 4523. [ The first atmosphere surface 4521, the second atmosphere surface 4522, and the third atmosphere surface 4523 are sequentially formed in a direction away from the substrate support member 4100.

The first waiting surface 4521 is provided with a first waiting portion 4531. A second nozzle 4360 may be positioned in the first vent base 4531. The first vent base 4531 may be provided with a groove formed in the first atmosphere surface 4521. Also, the first vent portion 4531 may be provided as a rib protruding from the first atmosphere surface 4521 so as to surround the outer surface of the second nozzle 4360. Also, the first vent portion 4531 may be provided with a rib protruding to surround the outer surface of the second nozzle 4360 and a groove formed inside the rib.

The second waiting surface 4522 is provided with a second standby portion 4532. And the second nozzle 4360 may be located in the second vent 4532. The second base 4532 may be provided with a groove formed in the second atmosphere surface 4522. In addition, the second vent base 4532 may be provided as a rib projecting from the second atmosphere surface 4522 so as to surround the outer surface of the second nozzle 4360. Also, the second vent portion 4532 may be provided with a rib protruding to surround the outer surface of the second nozzle 4360 and a groove formed inside the rib.

The third waiting surface 4523 is provided with a third standby portion 4533. And the second nozzle 4360 may be positioned in the third large base 4533. The third major portion 4533 may be provided as a groove formed in the third atmosphere surface 4523. In addition, the first vent portion 4531 may be provided as a rib projecting from the third atmosphere surface 4523 so as to surround the outer surface of the second nozzle 4360. The third vent portion 4533 may be provided with a rib protruding to surround the outer surface of the second nozzle 4360 and a groove formed inside the rib.

The first vent base 4531 and the second ventricle 4532 and the third ventricle 4533 are aligned in a direction parallel to the guide member 4420 and the second nozzle 4360 (B) of FIG.

8 is a view showing a process of positioning the second nozzle at the standby port.

Referring to Figs. 5 to 8, the processing liquid supply unit 4300 can position the second nozzle 4360 at the standby port 4500. Fig.

At least one of the waiting portions 4530 of the waiting port 4500 is provided without the second nozzle 4360 being positioned. For example, as illustrated in FIG. 8, only the second nozzle 4360 is located in the second vent portion 4532 and the third vent portion 4533, and the first vent portion 4531 may be in the empty state have. The nozzle arm 4320 is moved so that the second nozzle 4360 positioned in the nozzle arm 4320 by the driving member 4400 is vertically aligned with the first standby portion 4531. The nozzle arm 4320 is lowered in the direction of the first air bearing portion 4531 by driving of the nozzle arm supporting member 4410 so that the second nozzle 4360a is positioned in the first air bearing portion 4531. [ When only the nozzle arm 4320 is lifted with the second nozzle 4360 separated, the separation of the second nozzle 4360a is completed.

9 and 10 are views showing a process in which the second nozzle is coupled to the nozzle arm.

5 to 8, 9, and 10, the treatment liquid supply unit 4300 may be combined with one of the second nozzles 4360 located at the standby port 4500. [ Hereinafter, the case where the treatment liquid supply unit 4300 is combined with the second nozzle 4360b located in the second waiting portion 4532 will be described as an example. The treatment liquid supply unit 4300 may be combined with the second nozzle 4360 located in the first vent portion 4531 or the third vent portion 4533 in a similar manner.

The nozzle arm 4320 is moved such that the portion to which the second nozzle 4360 is coupled by the driving member 4400 is vertically aligned with the second nozzle 4360 located in the second waiting portion 4532. [ The nozzle arm 4320 is lowered to the second nozzle 4360 located at the second standby portion 4532 by driving of the nozzle arm supporting member 4410 and is then engaged with the second nozzle 4360. The first nozzle 4340 is positioned so that collision with the second nozzle 4360 located in the first venturi 4531 can be prevented. The distance S1 between the second nozzle 4360 and the first nozzle 4340 in the nozzle arm 4320 is larger than the horizontal distance between the adjacent air inlets 4530 by the diameter of the second nozzle 4360 (S2). ≪ / RTI >

Thereafter, when the nozzle arm 4320 is raised to a set height by the nozzle arm supporting member 4410, the coupling of the nozzle arm 4320 is completed.

11 is a view illustrating a state in which a second nozzle located at a standby port according to another embodiment is coupled to a nozzle arm.

11, the standby port 4501 is positioned at the first nozzle 4341 and the standby port 4501 when the second nozzle 4361 located at the standby port 4501 is coupled with the nozzle arm 4321. [ 4522b, and 4523b is formed to prevent collision of the other second nozzles 4361 that have been formed. That is, when the nozzle arm 4321 is engaged with the nozzle arm 4321 located on the second atmosphere surface 4522b, the difference in height between the first atmosphere surface 4521b and the second atmosphere surface 4522b is greater than the height difference between the first nozzle surface 4341 are provided apart from the upper end of the second nozzle 4361a located on the first atmosphere surface 4521b. Also, the second waiting surface 4522b and the third waiting surface 4523b are formed under the same height.

The configuration of the port body 4511, the first ventricle 4531b, the second ventricle 4532b and the third ventricle 4533b, except for the height difference of the atmospheric surfaces, ), So repeated explanation is omitted.

12 is a plan view of the application module according to another embodiment, and Fig. 13 is a side sectional view of the application module of Fig.

12 and 13, the application module 401b includes a substrate support member 4100b, a process liquid supply unit 4300b, and a standby port 4502. [

The configuration and operation of the substrate support member 4100b and the container 4200b are the same as those of the application module 401 of Figs. 5 and 6, and therefore repeated description is omitted.

The treatment liquid supply unit 4300b includes a nozzle arm 4320b, a nozzle arm supporting member 4410b, and a driving member 4400b.

At one end of the nozzle arm 4320b, nozzles 4342 and 4362 are positioned. The nozzle arm supporting member 4410b is connected to the other end of the nozzle arm 4320b. The driving member 4400b rotates the nozzle arm supporting member 4410b. Accordingly, the nozzles 4342 and 4362 positioned at the end of the nozzle arm 4320b can be moved along the locus provided in the circle. Also, one of the traces of the nozzles 4342 and 4362 may pass through the center of the substrate support member 4100b.

The first venturi 4531c, the second ventricle 4532c and the third ventricle 4533c provided in the standby port 4502 are connected to the second nozzle 4362 at the end of the nozzle arm 4320b Is arranged in an arc shape so as to be positioned below the trajectory (b) of the part. The distance between the first nozzle 4342 and the second nozzle 4362 in the nozzle arm 4320b is provided in a similar manner as in Fig. 10 so that the first nozzle 4342 is connected to the atmospheric portions 4531c, 4532c, and 4533c And may be located outside the second nozzle 4362 positioned. The difference in height between adjacent air surfaces 4521c, 4522c and 4523c is also provided in a manner similar to that of Fig. 11 so that the lower end of the first nozzle 4342 is connected to the second nozzles 4531c, 4532c, May be located at the upper end of the upper portion 4362.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: Load port 200: Index module
300: first buffer module 400: application and development module
500: second buffer module 600: pre-exposure processing module
700: interface module 4100: substrate support member
4200: container 4300: process liquid supply unit
4400: driving member 4500: standby port

Claims (7)

A substrate support member for supporting a substrate to be processed;
A rotation drive member for rotating the substrate support member;
A container provided to surround the periphery of the substrate supporting member;
A processing liquid supply unit positioned at one side of the substrate supporting member and capable of moving the first nozzle and the second nozzle in a horizontal direction and a vertical direction; And
Wherein the processing liquid supply unit is formed so as to be stepped so that an upper surface on which the second nozzle separated from the processing liquid supply unit can be positioned is higher as the processing liquid supply unit moves away from the vessel, And a standby port on which the two nozzles can be positioned, each of which is formed on the upper surface of the stepped portion,
Wherein the processing liquid supply unit includes:
A nozzle arm having the first nozzle and the second nozzle at one end thereof;
A nozzle arm supporting member connected to the other end of the nozzle arm; And
And a guide member for guiding the linear movement of the nozzle arm supporting member. The method according to claim 1,
Wherein the atmospheric portions are linearly arranged along a locus in which the portion of the nozzle arm where the second nozzle is coupled is movable. A substrate support member for supporting a substrate to be processed;
A rotation drive member for rotating the substrate support member;
A container provided to surround the periphery of the substrate supporting member;
A processing liquid supply unit positioned at one side of the substrate supporting member and capable of moving the first nozzle and the second nozzle in a horizontal direction and a vertical direction; And
Wherein the processing liquid supply unit is formed so as to be stepped so that an upper surface on which the second nozzle separated from the processing liquid supply unit can be positioned is higher as the processing liquid supply unit moves away from the vessel, And a standby port on which the two nozzles can be positioned, each of which is formed on the upper surface of the stepped portion,
Wherein the processing liquid supply unit includes:
A nozzle arm having the first nozzle and the second nozzle at one end thereof;
A nozzle arm supporting member connected to the other end of the nozzle arm; And
And a driving member connected to the nozzle arm supporting member and rotating the nozzle arm supporting member. The method of claim 3,
Wherein the atmospheric portions are arranged in a arc shape along a locus in which the portion to which the second nozzle is coupled in the nozzle arm can be moved. The method according to claim 1 or 3,
Wherein the first nozzle is positioned opposite to the atmospheric port with respect to the second nozzle. The method according to claim 1 or 3,
Wherein the separation distance between the first nozzle and the second nozzle located in the processing solution supply unit is larger than a horizontal separation distance between adjacent ones of the atmospheres plus a diameter of the second nozzle plus the distance. The method according to claim 1 or 3,
Wherein a height difference between adjacent ones of the upper surfaces is provided such that the first nozzle and the second nozzle located at the atmospheres are spaced apart when the first nozzle and the second nozzle descend.

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