TWI793565B - 積體電路封裝及其形成方法 - Google Patents
積體電路封裝及其形成方法 Download PDFInfo
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- TWI793565B TWI793565B TW110112667A TW110112667A TWI793565B TW I793565 B TWI793565 B TW I793565B TW 110112667 A TW110112667 A TW 110112667A TW 110112667 A TW110112667 A TW 110112667A TW I793565 B TWI793565 B TW I793565B
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Abstract
在實施例中,提供一種積體電路封裝及其形成方法。所
述方法包括:利用介電質至介電質接合且利用金屬至金屬接合將第一記憶體裝置的背側接合至第二記憶體裝置的前側;在所述接合之後,在所述第一記憶體裝置的前側處貫穿第一介電層形成第一導電凸塊,所述第一導電凸塊自所述第一介電層的主表面凸起;使用所述第一導電凸塊測試所述第一記憶體裝置及所述第二記憶體裝置;以及在所述測試之後,用可迴焊連接件將邏輯裝置貼合至所述第一導電凸塊。
Description
本發明實施例是有關於一種積體電路封裝及其形成方法。
隨著積體電路(integrated circuit,IC)的發展,由於各種電子組件(即電晶體、二極體、電阻器、電容器等)的積集度的不斷提高,半導體行業已經歷持續快速成長。在很大程度上,積集度的此種提高是來自於最小特徵尺寸的不斷減小,此使得更多的組件能夠整合至給定面積之中。
積集度的此種提高實質上是從二維層面而言,原因在於積體組件所佔據的面積實質上是位於半導體晶圓的表面上。增大的密度及積體電路的面積的相應減小通常已超出了將積體電路晶片直接接合至基底上的能力。已使用中介層(interposer)將球接觸面積自晶片重佈線至中介層的更大面積。此外,中介層已使得能夠實現包括多個晶片的三維封裝。亦已開發出其他封裝來併入三維態樣。
本發明實施例提供一種積體電路封裝的形成方法,其包括:利用介電質對介電質接合鍵以及利用金屬對金屬接合鍵將第一記憶體裝置的背側接合至第二記憶體裝置的前側;在所述接合之後,在所述第一記憶體裝置的前側處形成穿過第一介電層的第一導電凸塊,所述第一導電凸塊自所述第一介電層的主表面凸起;使用所述第一導電凸塊測試所述第一記憶體裝置及所述第二記憶體裝置;以及在所述測試之後,利用可迴焊連接件將邏輯裝置貼合至所述第一導電凸塊。
本發明實施例提供一種積體電路封裝的形成方法,其包括:在載體基底上方堆疊多個記憶體裝置;移除所述載體基底,以露出位於所述記憶體裝置的上部記憶體裝置的前側處的介電層的主表面;在所述移除之後,形成穿過所述介電層的導電凸塊,所述導電凸塊自所述介電層的所述主表面凸起;使用所述導電凸塊測試所述記憶體裝置中的每一者;以及在所述測試之後,利用可迴焊連接件將邏輯裝置貼合至所述導電凸塊。
本發明實施例提供一種積體電路封裝,其包括:第一記憶體立方體,包括多個第一記憶體裝置,所述多個第一記憶體裝置利用介電質對介電質接合鍵以及利用金屬對金屬接合鍵背對面接合,所述第一記憶體立方體的頂部記憶體裝置包括位於所述頂部記憶體裝置的前側處的第一導電凸塊,所述第一記憶體立方體的每個相應的下部記憶體裝置包括位於所述相應的下部記憶體裝
置的前側處的接合接墊;邏輯裝置,包括第二導電凸塊;第一可迴焊連接件,將所述第一導電凸塊物理及電性耦合至所述第二導電凸塊;以及第一底部填充劑,位於所述邏輯裝置與所述第一記憶體立方體之間,所述第一底部填充劑圍繞所述第一可迴焊連接件中的每一者。
10:積體電路裝置
10A、10B、10C、10D、10E、10F、10G、10H:記憶體裝置
10L:邏輯裝置
10P:處理器裝置
12、12A、12B、12L、12P:半導體基底
14、14A、14B、14L、14P:內連結構
16、16A、16B、16D、16H、16L:導通孔
18:障壁層
20:導電材料
22、22A、22B、22C、22D、22E、22F、22G、22H、22L、22P:晶粒連接件
24、24A、24B、24C、24D、24E、24F、24G、24H、24L、24P:介電層
26P:導電連接件
50、50A、50B:記憶體立方體
52:載體基底
52A:裝置區
54:釋放層
56A、56B、56C、56D、56E、56F、56G、56H:晶圓
58:介電層
60:晶粒連接件
62:探針
64、66:介電層
68:晶粒連接件
68A:晶粒連接件的第一子集
68B:晶粒連接件/晶粒連接件的第二子集
70:被動裝置
72:基底
74:導通孔
76:晶粒連接件
78:介電層
80:晶粒連接件
82:介電層
84:介電層
86:導通孔
100:HBM裝置
102:晶圓
102A:裝置區
102R:區
104:介電層
106:晶粒連接件
108:可迴焊連接件
110:底部填充劑
112:包封體
114:導電連接件
116:晶粒連接件
118:介電層
120:可迴焊連接件
122:底部填充劑
124:包封體
126:介電層
128:凸塊下金屬(UBM)
200:封裝組件
202:載體基底
202A:裝置區
204:釋放層
206:包封體
208:介電層
210:UBM
212:介電層
214:UBM
300:積體電路封裝
302:晶圓
302A:封裝區
304:中介層
306:半導體基底
308:內連結構
310:導通孔
312:晶粒連接件
314:外部連接件
316:底部填充劑
318:包封體
320:導電連接件
400:封裝基底
402:基底芯
404:接合接墊
406:底部填充劑
500:積體電路封裝
502:載體基底
502A:封裝區
504:釋放層
506:重佈線結構
506A:第一部分
506B:第二部分
508:介電層
510:金屬化圖案
512:導電連接件
514:底部填充劑
516:包封體
600:積體電路封裝
602:載體基底
602A:封裝區
604:釋放層
606:重佈線結構
608:介電層/頂部介電層/底部介電層
610:金屬化圖案
612:導通孔
614:橋接晶粒
616:半導體基底
618:矽穿孔/基底穿孔(TSV)
620:包封體
622:重佈線結構
624:介電層/頂部介電層
626:金屬化圖案
628:導電連接件
630:底部填充劑
632:包封體
結合附圖閱讀以下詳細說明,會最佳地理解本發明的各個態樣。應注意,根據本行業中的標準慣例,各種特徵並非按比例繪製。事實上,為論述清晰起見,可任意增大或減小各種特徵的尺寸。
圖1是根據一些實施例的積體電路裝置的剖視圖。
圖2A至圖2F是根據一些實施例,在形成記憶體立方體(memory cube)的製程期間的中間步驟的剖視圖。
圖3A至圖3F是根據一些實施例,在形成高頻寬記憶體(high bandwidth memory,HBM)裝置的製程期間的中間步驟的剖視圖。
圖4A至圖4D是根據一些其他實施例,在形成HBM裝置的製程期間的中間步驟的剖視圖。
圖5A至圖5C是根據一些其他實施例,在形成HBM裝置的製程期間的中間步驟的剖視圖。
圖6A至圖6F是根據一些其他實施例,在形成記憶體立
方體的製程期間的中間步驟的剖視圖。
圖7至圖9是根據一些其他實施例的HBM裝置的剖視圖。
圖10A至圖10E是根據一些實施例,在形成記憶體立方體的製程期間的中間步驟的剖視圖。
圖11、圖12及圖13是根據一些其他實施例的HBM裝置的剖視圖。
圖14A及圖14B是根據一些實施例,在形成積體電路封裝的製程期間的中間步驟的剖視圖。
圖15A至圖15C是根據一些其他實施例,在形成積體電路封裝的製程期間的中間步驟的剖視圖。
圖16A至圖16F是根據一些其他實施例,在形成積體電路封裝的製程期間的中間步驟的剖視圖。
以下揭露內容提供用於實施本發明的不同特徵的諸多不同的實施例或實例。以下闡述組件及排列的具體實例以簡化本揭露內容。當然,該些僅為實例且不旨在進行限制。舉例而言,以下說明中將第一特徵形成於第二特徵「之上」或第二特徵「上」可包括其中第一特徵及第二特徵被形成為直接接觸的實施例,且亦可包括其中第一特徵與第二特徵之間可形成有附加特徵、進而使得所述第一特徵與所述第二特徵可能不直接接觸的實施例。另
外,本發明可能在各種實例中重複使用參考編號及/或字母。此種重複使用是出於簡潔及清晰的目的,但自身並不表示所論述的各種實施例及/或配置之間的關係。
此外,為易於說明,本文中可能使用例如「位於...之下(beneath)」、「下面(below)」、「下部的(lower)」、「上方(above)」、「上部的(upper)」等空間相對性用語來闡述圖中所示一個元件或特徵與另一(其他)元件或特徵的關係。所述空間相對性用語旨在除圖中所繪示的定向外亦囊括裝置在使用或操作中的不同定向。設備可具有其他定向(旋轉90度或處於其他定向)且本文中所用的空間相對性描述語可同樣相應地進行解釋。
根據一些實施例,藉由利用混合接合(hybrid bonding)堆疊多個記憶體裝置來形成記憶體立方體。在混合接合之後,在記憶體立方體的頂部記憶體裝置中形成晶粒連接件,例如導電凸塊。使用晶粒連接件測試記憶體立方體,使得僅使用已知良好的記憶體立方體進行進一步的製程。然後,晶粒連接件可用於將記憶體立方體貼合至具有可迴焊連接件的邏輯裝置。因此,可避免處理已知不良記憶體立方體,藉此降低裝置的製造成本。
圖1是根據一些實施例的積體電路裝置10的剖視圖。積體電路裝置10可為邏輯晶粒(例如,中央處理單元(central processing unit,CPU)、圖形處理單元(graphic processing unit,GPU)、系統晶片(system-on-a-chip,SoC)、微控制器等)、記憶體晶粒(例如,動態隨機存取記憶體(dynamic random access
memory,DRAM)晶粒、靜態隨機存取記憶體(static random access memory,SRAM)晶粒等)、電力管理晶粒(例如,電力管理積體電路(power management integrated circuit,PMIC)晶粒)、射頻(radio frequency,RF)晶粒、感測器晶粒、微機電系統(micro-electro-mechanical-system,MEMS)晶粒、訊號處理晶粒(例如,數位訊號處理(digital signal processing,DSP)晶粒)、前端晶粒(例如,類比前端(analog front-end,AFE)晶粒)、類似晶粒、或其組合。積體電路裝置10形成在晶圓(未示出)中,所述晶圓包括不同的裝置區。在一些實施例中,多個晶圓將被堆疊以形成晶圓堆疊,所述晶圓堆疊在後續製程中被單體化以形成多個晶粒堆疊。在一些實施例中,晶圓被單體化以形成多個積體電路裝置10,所述多個積體電路裝置10在後續製程中被堆疊以形成多個晶粒堆疊。積體電路裝置10可根據可適用的製造製程進行處理以形成積體電路。舉例而言,積體電路裝置10可包括半導體基底12、內連結構14、導通孔16、晶粒連接件22及介電層24。
半導體基底12可為經摻雜或未經摻雜的矽,或者為絕緣體上半導體(semiconductor-on-insulator,SOI)基底的主動層。半導體基底12可包含其他半導體材料,例如:鍺;化合物半導體,包括碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦及/或銻化銦;合金半導體,包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP;或其組合。亦可使用例如多層式基底或梯度基底(gradient substrate)等其他基底。半導體基底12具有主動表面(例
如,圖1中面朝上的表面)、以及非主動表面(例如,圖1中面朝下的表面)。所述主動表面有時被稱為前側,所述非主動表面有時被稱為背側。
裝置可形成在半導體基底12的主動表面處。所述裝置可為主動裝置(例如,電晶體、二極體等)、電容器、電阻器等。非主動表面可不具有裝置。層間介電質(inter-layer dielectric,ILD)位於半導體基底12的主動表面上方。ILD圍繞並可能覆蓋所述裝置。ILD可包括一或多個由例如磷矽酸鹽玻璃(Phospho-Silicate Glass,PSG)、硼矽酸鹽玻璃(Boro-Silicate Glass,BSG)、硼摻雜磷矽酸鹽玻璃(Boron-Doped Phospho-Silicate Glass,BPSG)、未經摻雜矽酸鹽玻璃(undoped Silicate Glass,USG)或類似材料等材料形成的介電層。
內連結構14位於半導體基底12的主動表面上方。內連結構14在半導體基底12的主動表面處將裝置內連,以形成積體電路。內連結構14可由例如介電層中的金屬化圖案形成。所述金屬化圖案包括形成於一或多個介電層中的金屬線及通孔。內連結構14的金屬化圖案電性耦合至半導體基底12的主動表面處的裝置。
導通孔16被形成為延伸至內連結構14及/或半導體基底12中。導通孔16電性耦合至內連結構14的金屬化圖案。作為形成導通孔16的實例,可藉由例如蝕刻、碾磨(milling)、雷射技術、其組合及/或類似技術在內連結構14及/或半導體基底12中形
成凹陷。可例如利用氧化技術而在凹陷中形成薄介電材料。障壁層18可例如藉由化學氣相沈積(chemical vapor deposition,CVD)、原子層沈積(atomic layer deposition,ALD)、物理氣相沈積(physical vapor deposition,PVD)、熱氧化、其組合及/或類似方法共形地沈積在開口中。可由氧化物、氮化物、或氮氧化物(例如,氮化鈦、氮氧化鈦、氮化鉭、氮氧化鉭、氮化鎢、其組合及/或類似材料)形成障壁層18。可在障壁層18上方及在開口中沈積導電材料20。可藉由電化學鍍覆製程、CVD、PVD、其組合及/或類似方法形成導電材料20。導電材料的實例為銅、鎢、鋁、銀、金、其組合及/或類似物。藉由例如化學機械研磨(chemical-mechanical polish,CMP)自內連結構14及/或半導體基底12的表面移除多餘的導電材料20及障壁層18。障壁層18的剩餘部分及導電材料20的剩餘部分形成導通孔16。
在所示的實施例中,導通孔16尚未暴露於積體電路裝置10的背側處。相反,導通孔16被掩埋在半導體基底12中。如下文將更詳細論述,在後續製程中,導通孔16將暴露於積體電路裝置10的背側處。在暴露之後,導通孔16可被稱為矽穿孔或基底穿孔(through-silicon via/through-substrate via,TSV)。
晶粒連接件22位於積體電路裝置10的前側處。晶粒連接件22可為進行外部連接的導電柱、接墊或類似物。晶粒連接件22位於內連結構14中及/或位於內連結構14上。晶粒連接件22可由例如銅、鋁或其類似物等金屬形成,並且可藉由例如鍍覆或
類似方法形成。
介電層24位於積體電路裝置10的前側處。介電層24位於內連結構14中及/或位於內連結構14上。介電層24在側向上包封晶粒連接件22,並且介電層24與積體電路裝置10的側壁(在製程變化範圍內)在側向上共端(coterminous)。介電層24可為:氧化物,例如氧化矽、PSG、BSG、BPSG或類似物;氮化物,例如氮化矽或類似物;聚合物,例如聚苯並噁唑(polybenzoxazole,PBO)、聚醯亞胺、苯並環丁烯(benzocyclobutene,BCB)系聚合物或類似物;類似物;或其組合。介電層24可例如藉由旋轉塗佈、層疊、化學氣相沈積(CVD)或類似方法形成。在一些實施例中,介電層24在晶粒連接件22之後形成,並且可掩埋晶粒連接件22,使得介電層24的頂表面位於晶粒連接件22的頂表面之上。在一些實施例中,晶粒連接件22例如藉由鑲嵌製程(例如,單鑲嵌、雙鑲嵌或類似鑲嵌)在介電層24之後形成。在形成之後,可使用例如CMP製程、回蝕製程、類似製程或其組合將晶粒連接件22及介電層24平坦化。在平坦化之後,晶粒連接件22的頂表面與介電層24的頂表面(在製程變化範圍內)共面,並且暴露於積體電路裝置10的前側處。在另一實施例中,例如藉由鍍覆製程在介電層24之後形成晶粒連接件22,並且晶粒連接件22是凸起的連接件(例如,微凸塊),使得晶粒連接件22的頂表面在介電層24的頂表面之上延伸。
圖2A至圖2F是根據一些實施例,在形成記憶體立方體
50的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖2A至圖2F示出其中藉由在載體基底52上堆疊包括第一積體電路裝置的多個晶圓來形成記憶體立方體50的製程。第一積體電路裝置可各自具有類似於以上參照圖1論述的積體電路裝置10的結構,並且在實施例中可為記憶體裝置。示出堆疊晶圓,以在載體基底52的一個裝置區52A中形成記憶體立方體50,但應理解,載體基底52可具有任意數量的裝置區,並且記憶體立方體50可形成於每個裝置區中。以自上而下(或反向)的方式藉由晶圓上晶圓(wafer-on-wafer,WoW)的堆疊形成記憶體立方體50,其中提供用於記憶體立方體50的頂層的晶圓,並且隨後在頂部晶圓上堆疊用於記憶體立方體50的位於下方的層的晶圓。將晶圓堆疊單體化以形成多個記憶體立方體50。在形成後測試記憶體立方體50,以減少或防止對已知不良記憶體立方體50的後續處理。
隨後,可使用記憶體立方體50形成高頻寬記憶體(high bandwidth memory,HBM)裝置。具體而言,如以下將更詳細論述,可進一步將記憶體立方體50堆疊在第二積體電路裝置上以形成HBM裝置。第二積體電路裝置可具有類似於以上參照圖1論述的積體電路裝置10的結構,並且在實施例中可為邏輯裝置。
在圖2A中,提供載體基底52,且在載體基底52上形成釋放層54。載體基底52可為玻璃載體基底、陶瓷載體基底或類似基底。載體基底52可為晶圓,進而使得可在載體基底52上同時形成多個記憶體立方體50。
釋放層54可由聚合物系材料形成,所述聚合物系材料可與載體基底52一起自將在後續步驟中形成的上覆結構被移除。在一些實施例中,釋放層54為當受熱時會失去其黏合性質的環氧樹脂系熱釋放材料,例如光熱轉換(light-to-heat-conversion,LTHC)釋放塗層。在其他實施例中,釋放層54可為當暴露至紫外(ultra-violet,UV)光時會失去其黏合性質的紫外(UV)膠。釋放層54可作為液體被分配並被固化,可為疊層至載體基底52上的疊層膜(laminate film)或可為類似材料。釋放層54的頂表面可被整平且可具有高的平坦度。
在載體基底52上堆疊晶圓56A。晶圓56A包括多個積體電路裝置,例如裝置區52A中的記憶體裝置10A。記憶體裝置10A將在後續製程中被單體化,以被包括在記憶體立方體50中。記憶體裝置10A包括半導體基底12A、內連結構14A、導通孔16A及介電層24A,但在此製程步驟中不包括位於介電層24A中的晶粒連接件。晶圓56A面朝下堆疊在載體基底52上,使得介電層24A的主表面面向/接觸載體基底52。如以下將更詳細論述,在單體化後將記憶體立方體50貼合至另一個積體電路裝置。使用可迴焊連接件將記憶體立方體50貼合至另一積體電路裝置。在一些實施例中,可在介電層24A中形成適於與可迴焊連接件一起使用的晶粒連接件(例如,微凸塊)。在晶圓堆疊完成後形成微凸塊,以防止在晶圓堆疊期間對微凸塊的損壞。
在圖2B中,將晶圓56A薄化。薄化可藉由CMP製程、
磨削(grinding)製程、回蝕製程、類似製程或其組合進行,並且在半導體基底12A的非主動表面上執行。所述薄化暴露出導通孔16A。在薄化之後,導通孔16A的表面與半導體基底12A的非主動表面(在製程變化範圍內)共面。因此,導通孔16A暴露於記憶體裝置10A的背側處。
在圖2C中,將晶圓56B堆疊在載體基底52上方。具體而言,將晶圓56B的前側貼合至晶圓56A的背側。晶圓56B包括多個積體電路裝置,例如裝置區52A中的記憶體裝置10B。記憶體裝置10B將在後續製程中被單體化,以被包括在記憶體立方體50中。記憶體裝置10B包括半導體基底12B、內連結構14B、導通孔16B、晶粒連接件22B及介電層24B。
將晶圓56A與晶圓56B背對面(back-to-face)接合,例如藉由混合接合以背對面的方式直接接合,使得晶圓56A的背側接合至晶圓56B的前側。具體而言,在晶圓56A與晶圓56B之間形成介電質對介電質接合及金屬對金屬接合。在所示實施例中,於晶圓56A的背側處形成介電層58及晶粒連接件60,並將所述介電層58及晶粒連接件60用於混合接合。
於晶圓56A的背側處、例如在半導體基底12A上形成介電層58。介電層58與積體電路裝置10的側壁(在製程變化範圍內)在側向上共端。介電層58可為:氧化物,例如氧化矽、PSG、BSG、BPSG或類似物;氮化物,例如氮化矽或類似物;聚合物,例如聚苯並噁唑(PBO)、聚醯亞胺、苯並環丁烯(BCB)系聚合
物或類似物;類似物;或其組合。介電層58可例如藉由旋轉塗佈、層疊、化學氣相沈積(CVD)或類似方法形成。在一些實施例中(以下更詳細論述),在形成介電層58之前使半導體基底12A凹陷,使得介電層58圍繞導通孔16A。
晶粒連接件60形成於晶圓56A的背側處,並且與導通孔16A物理接觸。晶粒連接件60可為進行外部連接的導電柱、接墊或類似物。晶粒連接件60可由例如銅、鋁或類似物等金屬形成,並且可藉由例如鍍覆或類似方法形成。藉由導通孔16A將晶粒連接件60電性連接至記憶體裝置10A的積體電路。在形成之後,使用例如CMP製程、回蝕製程、類似製程或其組合將介電層58及晶粒連接件60平坦化。在平坦化之後,晶粒連接件60的頂表面與介電層58的頂表面(在製程變化範圍內)共面,並且暴露於晶圓56A的背側處。
在不使用任何黏著劑材料(例如,晶粒貼合膜)的情況下藉由介電質對介電質接合將介電層58接合至介電層24B,並且在不使用任何共晶材料(例如,焊料)的情況下藉由金屬對金屬接合將晶粒連接件60接合至晶粒連接件22B。所述接合可包括預接合及退火。在預接合期間,施加小的壓力以將晶圓56B按壓抵靠至晶圓56A。在例如室溫等低溫(例如,在約15℃至約30℃的範圍內的溫度)下執行預接合,並且在預接合之後,介電層24B與介電層58彼此接合。然後在後續退火步驟中提高接合強度,在所述退火步驟中,在高溫(例如在約140℃至約280℃的範圍內的
溫度)下對介電層24B及介電層58進行退火。在退火後,形成將介電層24B及介電層58接合的接合鍵,例如熔融鍵(fusion bond)。舉例而言,該些接合鍵可為介電層58的材料與介電層24B的材料之間的共價鍵。晶粒連接件22B與晶粒連接件60以一一對應的方式彼此連接。晶粒連接件22B與晶粒連接件60可在預接合之後物理接觸,或者可在退火期間擴展至物理接觸。此外,在退火期間,晶粒連接件22B及晶粒連接件60的材料(例如,銅)混合,使得亦形成金屬對金屬接合鍵。因此,晶圓56A與晶圓56B之間所產生的接合鍵是包括介電質對介電質接合鍵及金屬對金屬接合鍵兩者的混合接合鍵。
在另一實施例中,省略了晶粒連接件60。在不使用任何黏著劑材料(例如,晶粒貼合膜)的情況下藉由介電質對介電質接合而將介電層58接合至介電層24B,並且在不使用任何共晶材料(例如,焊料)的情況下藉由金屬對金屬接合而將導通孔16A接合至晶粒連接件22B。
在又一實施例中,省略了介電層58及晶粒連接件60。可在不使用任何黏著劑材料(例如,晶粒貼合膜)的情況下藉由介電質對介電質接合而將半導體基底12A接合至介電層24B,並且可在不使用任何共晶材料(例如,焊料)的情況下藉由金屬對金屬接合而將導通孔16A接合至晶粒連接件22B。舉例而言,可在半導體基底12A的非主動表面上形成氧化物(例如天然氧化物、熱氧化物或類似物),並且所述氧化物可用於介電質對介電質接
合。
在圖2D中,重複上述步驟,使得在載體基底52上方堆疊晶圓56C、56D、56E、56F、56G、56H。晶圓56C、56D、56E、56F、56G、56H各自包括多個積體電路裝置,例如分別包括裝置區52A中的記憶體裝置10C、10D、10E、10F、10G、10H。記憶體裝置10C、10D、10E、10F、10G、10H將在後續製程中被單體化,以被包括在記憶體立方體50中。晶圓56C、56D、56E、56F、56G、56H中的每一者藉由混合接合以背對面的方式分別直接接合至晶圓56B、56C、56D、56E、56F、56G。所堆疊的最後一個晶圓(例如,晶圓56H)可不被薄化,使得晶圓56H的導通孔16H保持電性絕緣。
在圖2E中,執行載體基底剝離以自晶圓堆疊(例如,晶圓56A)分離(或「剝離」)載體基底52。根據一些實施例,所述剝離包括在釋放層54上投射例如雷射光或紫外光等光,以使得釋放層54在光的熱量下分解,且可移除載體基底52。移除載體基底52暴露出記憶體立方體50的上部記憶體裝置(例如,記憶體裝置10A)的主表面。接著將晶圓堆疊翻轉並放置於膠帶(未示出)上。
然後為記憶體立方體50的頂層(例如位於晶圓56A的前側處)形成晶粒連接件22A。晶粒連接件22A可為進行外部連接的導電柱、接墊或類似物。在一些實施例中,晶粒連接件22A為導電凸塊,例如微凸塊。晶粒連接件22A可具有(在製程變化範圍內)實質上垂直的側壁。在所示實施例中,晶粒連接件22A被
形成為貫穿介電層24A,以耦合內連結構14A的金屬化圖案。作為形成晶粒連接件22A的實例,在介電層24A中形成開口,並且在介電層24A上方及在開口中形成晶種層。在一些實施例中,晶種層為金屬層,所述金屬層可為單層或包括由不同材料形成的多個子層的複合層。在一些實施例中,晶種層包括鈦層及位於所述鈦層之上的銅層。可使用例如PVD或類似方法來形成晶種層。然後在晶種層上形成光阻並將所述光阻圖案化。可藉由旋轉塗佈或類似方法來形成光阻且可將所述光阻暴露至光以進行圖案化。光阻的圖案對應於晶粒連接件22A。所述圖案化會形成貫穿光阻的開口以暴露出晶種層。在光阻的開口中及在晶種層的被暴露出的部分上形成導電材料。導電材料可藉由鍍覆(例如,電鍍或無電鍍覆)或類似方法形成。所述導電材料可包括金屬,例如銅、鎳、鈦、鎢、鋁或類似物。接著,移除光阻以及晶種層的上面未形成有導電材料的部分。可藉由例如使用氧電漿或類似物的可接受的灰化製程或剝除製程來移除光阻。一旦光阻被移除,便例如使用可接受的蝕刻製程(例如藉由濕式蝕刻或乾式蝕刻)來移除晶種層的被暴露出的部分。晶種層的剩餘部分及導電材料的剩餘部分形成晶粒連接件22A。
晶粒連接件22A不同於晶粒連接件22B、22C、22D、22E、22F、22G、22H。具體而言,晶粒連接件22A是自介電層24A的主表面凸起的凸塊(例如,微凸塊)。相反,晶粒連接件22B、22C、22D、22E、22F、22G、22H是頂表面分別與介電層24B、24C、
24D、24E、24F、24G、24H的主表面共面(例如,未自所述主表面凸起)的接合接墊。換言之,記憶體立方體50的頂部記憶體裝置10A在記憶體裝置的前側處具有導電凸塊,並且記憶體立方體50的下部記憶體裝置10B、10C、10D、10E、10F、10G、10H在記憶體裝置的相應前側處具有接合接墊。
在圖2F中,沿著例如位於裝置區52A與相鄰裝置區之間的切割道區執行單體化製程。可藉由鋸切、雷射切割或類似方法進行單體化。單體化製程可在形成晶粒連接件22A之前或之後執行。單體化將裝置區52A與相鄰的裝置區分開。所得的經單體化的記憶體立方體50來自裝置區52A。在單體化後,記憶體立方體50的記憶體裝置在側向上(在製程變化範圍內)共端。
應理解,記憶體立方體50可包括任意數量的層。在所示實施例中,記憶體立方體50包括八層。在另一實施例中,記憶體立方體50包括多於或少於八層,例如兩層、四層、十六層、三十二層或類似數量的層。
在完成記憶體立方體50的形成後(例如,在形成晶粒連接件22A及單體化記憶體立方體50後),使用探針62測試所得的記憶體立方體50。探針62物理及電性連接至晶粒連接件22A。晶粒連接件22A用於測試記憶體立方體50,使得僅已知良好的記憶體立方體被用於進一步的製程。測試可包括測試記憶體裝置10A、10B、10C、10D、10E、10F、10G、10H的功能,或者可包括測試基於記憶體裝置的設計可能預期的已知開路或短路。在測試期
間,可以菊花鏈(daisy-chain)方式測試記憶體立方體50的所有記憶體裝置。
圖3A至圖3D是根據一些實施例,在形成HBM裝置100的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖3A至圖3D示出其中藉由在第二積體電路裝置(例如,邏輯裝置10L,參見圖3A)上堆疊記憶體立方體50而形成HBM裝置100的製程。第二積體電路裝置是可形成於晶圓102中的裸晶粒(bare die)。示出在晶圓102的一個裝置區102A中形成HBM裝置100,但應理解,晶圓102可具有任意數量的裝置區,並且HBM裝置100可形成於每個裝置區中。
隨後,可使用HBM裝置100形成積體電路封裝。具體而言,如以下將更詳細論述,HBM裝置100可封裝在例如系統級封裝(system-in-package,SiP)等三維積體電路(three-dimensional integrated circuit,3DIC)封裝中。3DIC封裝的實例包括晶圓上晶片(chip-on-wafer,CoW)封裝、基底上晶圓上晶片(chip-on-wafer-on-substrate,CoWoS)封裝、積體扇出(integrated fan-out,InFO)封裝或類似封裝,但應理解,實施例可應用於其他3DIC封裝。
在圖3A中,獲得晶圓102。晶圓102包括位於裝置區102A中的邏輯裝置10L。邏輯裝置10L將在後續處理中被單體化,以被包括在HBM裝置100中。邏輯裝置10L可為用於記憶體立方體50的記憶體裝置的介面裝置、緩衝裝置、控制器裝置或類似裝置。
在一些實施例中,邏輯裝置10L為HBM裝置100提供輸入/輸出(input/output,I/O)介面。邏輯裝置10L包括半導體基底12L、內連結構14L、導通孔16L、晶粒連接件22L及介電層24L。晶粒連接件22L用於連接至其他裝置,例如可在其中實現HBM裝置100的積體電路封裝中的裝置。晶粒連接件22L可由與關於圖2E描述的晶粒連接件22A類似的材料及類似的方法形成。舉例而言,晶粒連接件22A可為延伸穿過介電層24L、適於與可迴焊連接件一起使用的連接件,例如微凸塊。
在圖3B中,將晶圓102薄化。薄化可藉由CMP製程、磨削製程、回蝕製程、類似製程或其組合進行,並且在半導體基底12L的非主動表面上執行。所述薄化暴露出導通孔16L。在薄化之後,導通孔16L的表面與半導體基底12L的非主動表面(在製程變化範圍內)共面。因此,導通孔16L暴露於邏輯裝置10L的背側處。
然後在晶圓102上方(例如,在邏輯裝置10L的背側處)形成介電層104。介電層104可由與關於圖2C描述的介電層58類似的材料及類似的方法形成。然後將晶粒連接件106形成為延伸穿過介電層104。晶粒連接件106可由與關於圖2E描述的晶粒連接件22A類似的材料及類似的方法形成。舉例而言,晶粒連接件106可為適於與可迴焊連接件一起使用的連接件,例如微凸塊。晶粒連接件106物理連接至導通孔16L,並且藉由導通孔16L電性連接至邏輯裝置10L的積體電路。
在圖3C中,將記憶體立方體50貼合至晶圓102,例如貼合至邏輯裝置10L的背側。利用可迴焊連接件108將記憶體立方體50連接至晶圓102。可迴焊連接件108可形成於晶粒連接件106及/或晶粒連接件22A上。可迴焊連接件108可由例如錫、錫-鉛、金、銀、錫-銀、錫-鉍、銅、銅-錫、銅-錫-銀、銅-鎳-錫-銀、鈀、銦、鎳、鎳-鈀-金、鎳-金、類似材料或其組合等焊料形成。在一些實施例中,可迴焊連接件108藉由以下方式來形成:利用蒸鍍、電鍍、印刷、焊料轉移、植球或類似方法首先形成焊料層。一旦已在所述結構上形成焊料層,則可執行迴焊(reflow)以將材料塑形為所期望的凸塊形狀。在一些實施例中,可迴焊連接件108形成於晶粒連接件106上。在此類實施例中,藉由將晶粒連接件22A與可迴焊連接件108接觸並隨後對可迴焊連接件108進行迴焊,而將記憶體立方體50連接至晶圓102,因此將記憶體立方體50焊接至晶圓102。因此,在晶粒連接件22A與晶粒連接件106之間形成焊接接頭(solder joint),藉此將記憶體立方體50連接至晶圓102。
在一些實施例中,於記憶體立方體50與晶圓102之間、圍繞可迴焊連接件108形成底部填充劑(underfill)110。底部填充劑110可減小應力並保護由對可迴焊連接件108進行迴焊而形成的接頭(joint)。底部填充劑110可在貼合記憶體立方體50後藉由毛細流動製程形成,或者可在貼合記憶體立方體50前藉由合適的沈積方法形成。
在圖3D中,在各種組件上且在各種組件周圍形成包封體112。在形成後,包封體112包封記憶體立方體50,並接觸底部填充劑110的側壁及記憶體立方體50的每個記憶體裝置。包封體112可為模塑化合物、環氧樹脂或類似物。包封體112可藉由壓縮模塑(compression molding)、轉移模塑(transfer molding)或類似方法施加,且可形成於晶圓102之上以使得記憶體立方體50被掩埋或覆蓋。包封體112可以液體或半液體形式施加,接著隨後被固化。視情況,對包封體112執行平坦化製程,以暴露出記憶體立方體50。在平坦化製程之後,記憶體立方體50的頂表面與包封體112的頂表面(在製程變化範圍內)共面。平坦化製程可為例如化學機械研磨(CMP)、磨削製程或類似製程。在一些實施例中,例如若已暴露出記憶體立方體50,則可省略平坦化。
然後沿著例如在裝置區102A周圍的切割道區執行單體化製程。可藉由鋸切、雷射切割或類似方法進行單體化。單體化製程將裝置區102A(包括邏輯裝置10L)與相鄰的裝置區分開,以形成包括邏輯裝置10L的HBM裝置100。經單體化的邏輯裝置10L的寬度大於記憶體立方體50的每個記憶體裝置的寬度。在單體化後,邏輯裝置10L與包封體112在側向上(在製程變化範圍內)共端。
在晶粒連接件22L上形成導電連接件114。導電連接件114可為球柵陣列(ball grid array,BGA)連接件、焊料球、金屬柱、受控塌陷晶粒連接(controlled collapse chip connection,C4)
凸塊、微凸塊、無電鍍鎳鈀浸金技術(electroless nickel-electroless palladium-immersion gold technique,ENEPIG)形成的凸塊或類似物。導電連接件114可包含導電材料,例如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似材料、或其組合。在一些實施例中,導電連接件114藉由以下方式形成:首先利用蒸鍍、電鍍、印刷、焊料轉移、植球或類似方法形成焊料層。一旦已在所述結構上形成焊料層,則可執行迴焊(reflow)以將材料塑形為所期望的凸塊形狀。在另一實施例中,導電連接件114包括藉由濺鍍、印刷、電鍍、無電鍍覆、CVD或類似方法形成的金屬柱(例如銅柱)。金屬柱可為無焊料的(solder free)且具有實質上垂直的側壁。在一些實施例中,在金屬柱的頂部上形成金屬頂蓋層。金屬頂蓋層可包含鎳、錫、錫-鉛、金、銀、鈀、銦、鎳-鈀-金、鎳-金、類似材料或其組合,且可藉由鍍覆製程來形成。導電連接件114可在單體化製程之前或之後形成。導電連接件114將用於外部連接(以下進一步論述)。
圖3E是根據一些實施例的來自圖3D的區102R的詳細視圖。在此實施例中,介電層58形成於導通孔16A周圍,並且晶粒連接件60形成於介電層58中以接觸導通孔16A。晶粒連接件22B接觸晶粒連接件60。此外,圖3E亦更清楚地示出晶粒連接件106及晶粒連接件22A如何為分別自介電層104及介電層24A的主表面凸起的凸塊(例如,微凸塊)。
圖3F是根據一些其他實施例的來自圖3D的區102R的
詳細視圖。在此實施例中,介電層58形成於導通孔16A周圍,但省略了晶粒連接件60。替代地,晶粒連接件22B接觸導通孔16A。此外,圖3F亦更清楚地示出晶粒連接件106及晶粒連接件22A如何為分別自介電層104及介電層24A的主表面凸起的凸塊(例如,微凸塊)。
圖4A至圖4D是根據一些其他實施例,在形成HBM裝置100的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖4A至圖4D示出其中藉由將記憶體立方體50堆疊在封裝組件200(參見圖4D)上而非裸晶粒上來形成HBM裝置100的製程。封裝組件200形成於載體基底202上,且包括第二積體電路裝置(例如,邏輯裝置10L,參見圖4A)。示出在載體基底202的一個裝置區202A中形成HBM裝置100,但應理解,載體基底202可具有任意數量的裝置區,並且HBM裝置100可形成於每個裝置區中。
在圖4A中,提供載體基底202,且在載體基底202上形成釋放層204。載體基底202可由與關於圖2A描述的載體基底52類似的材料及類似的方法形成。釋放層204可由與關於圖2A描述的釋放層54類似的材料及類似的方法形成。
在釋放層204上放置經單體化的邏輯裝置10L。除了晶粒連接件22L可不為凸塊、並且導通孔16L暴露於邏輯裝置10L的背側處之外,邏輯裝置10L可由與關於圖3A描述的邏輯裝置10L類似的材料及類似的方法形成。
在邏輯裝置10L上且在邏輯裝置10L周圍形成包封體206。包封體206可由與關於圖3D描述的包封體112類似的材料及類似的方法形成。必要時,可對包封體206執行平坦化製程,以暴露出晶粒連接件22L。
在包封體206及邏輯裝置10L的前側上形成介電層208。介電層208可為:氧化物,例如氧化矽、PSG、BSG、BPSG或類似物;氮化物,例如氮化矽或類似物;聚合物,例如聚苯並噁唑(PBO)、聚醯亞胺、苯並環丁烯(BCB)系聚合物或類似物;類似物;或其組合。介電層208可例如藉由旋轉塗佈、層疊、化學氣相沈積(CVD)或類似方法形成。
形成連接至邏輯裝置10L的凸塊下金屬(under-bump metallurgy,UBM)210。UBM 210具有位於介電層208的主表面上並沿著所述主表面延伸的凸塊部分,並且具有延伸穿过介電層208以物理及電性耦合晶粒連接件22L的通孔部分。結果,UBM 210電性耦合至邏輯裝置10L。作為形成UBM 210的實例,形成穿過介電層208的開口,並且在介電層208上方及延伸穿過介電層208的開口中形成晶種層。在一些實施例中,晶種層為金屬層,所述金屬層可為單層或包括由不同材料形成的多個子層的複合層。在一些實施例中,晶種層包括鈦層及位於所述鈦層上方的銅層。可使用例如PVD或類似方法來形成晶種層。然後在晶種層上形成光阻並將所述光阻圖案化。可藉由旋轉塗佈或類似方式來形成光阻且可將所述光阻暴露至光以進行圖案化。光阻的圖案對應
於UBM 210。所述圖案化會形成穿過光阻的開口以暴露出晶種層。然後在光阻的開口中及在晶種層的被暴露出的部分上形成導電材料。導電材料可藉由鍍覆(例如,電鍍或無電鍍覆)或類似方法形成。所述導電材料可包括金屬,如銅、鈦、鎢、鋁或類似物。導電材料與位於其下方的晶種層的一些部分的組合形成UBM 210。移除光阻以及晶種層的上面未形成有導電材料的部分。可藉由例如使用氧電漿或類似物的可接受的灰化製程或剝除製程來移除光阻。一旦光阻被移除,便例如使用可接受的蝕刻製程(例如藉由濕式蝕刻或乾式蝕刻)來移除晶種層的被暴露出的部分。
在圖4B中,執行載體基底剝離以將載體基底202自邏輯裝置10L分離(剝離)。根據一些實施例,所述剝離包括將光(例如雷射光或紫外光)投射在釋放層204上,以使得釋放層204在光的熱量下分解,且可移除載體基底202。然後可將所述結構翻轉並放置於例如膠帶上。
然後在包封體206及邏輯裝置10L的背側上形成介電層212。介電層212可由與介電層208類似的材料及類似的方法形成。
然後形成連接至邏輯裝置10L的UBM 214。UBM 214具有位於介電層212的主表面上並沿所述主表面延伸的凸塊部分,並且具有延伸穿過介電層212以物理及電性耦合導通孔16L的通孔部分。UBM 214可由與UBM 210類似的材料及類似的方法形成。
在圖4C中,將記憶體立方體50貼合至封裝組件200,例如貼合至UBM 214。記憶體立方體50為已經過測試的已知良好
的記憶體立方體。以與關於圖3C所述者類似的方式利用可迴焊連接件108將記憶體立方體50的晶粒連接件22A連接至封裝組件200的UBM 214。在一些實施例中,以與關於圖3C所述者類似的方式於記憶體立方體50與封裝組件200之間形成底部填充劑110。
在圖4D中,以與關於圖3D所述者類似的方式在各種組件上且在各種組件周圍形成包封體112。然後沿著例如在裝置區202A周圍的切割道區執行單體化製程。可藉由鋸切、雷射切割或類似方法進行單體化。單體化製程將裝置區202A(包括封裝組件200)與相鄰的裝置區分開,以形成包括封裝組件200的HBM裝置100。在單體化後,封裝組件200與包封體112在側向上(在製程變化範圍內)共端。
在UBM 210上形成導電連接件114。導電連接件114可由與關於圖3D描述的導電連接件114類似的材料及類似的方法形成。導電連接件114可在單體化製程之前或之後形成。導電連接件114將用於外部連接(以下進一步論述)。
將記憶體立方體50貼合至封裝組件200而非貼合至裸晶粒有利地允許邏輯裝置10L具有任何期望的尺寸。當藉由將記憶體立方體50直接貼合至裸晶粒(例如在關於圖3C描述的實施例中)而形成HBM裝置100時,裸晶粒將具有比記憶體立方體50的每個記憶體裝置都更大的寬度。然而,當藉由將記憶體立方體50貼合至封裝組件來形成HBM裝置100時,封裝組件將具有比記憶體立方體50的每個記憶體裝置更大的寬度,但經封裝的邏輯
裝置10L可具有比記憶體立方體50的每個記憶體裝置更大、更小或與記憶體立方體50的每個記憶體裝置類似的寬度。
圖5A至圖5C是根據一些其他實施例,在形成HBM裝置100的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖5A至圖5C示出其中藉由在將記憶體立方體50單體化之前在記憶體立方體50上堆疊第二積體電路裝置(例如,邏輯裝置10L,參見圖5A)而形成HBM裝置100的製程。示出對與關於圖2E描述的實施例類似的結構(例如,未經單體化的晶圓堆疊)的處理。示出在晶圓堆疊的一個裝置區52A中形成HBM裝置100,但應理解,晶圓堆疊可具有任意數量的裝置區,並且HBM裝置100可形成於每個裝置區中。在此實施例中,在單體化之前測試記憶體立方體50,並且僅已知良好的記憶體立方體50(例如,未經單體化的晶圓堆疊的已知良好的裝置區)可使用圖5A至圖5C中所示的製程進行處理。
在圖5A中,將經單體化的邏輯裝置10L接合至晶圓堆疊,例如接合至記憶體立方體50。除了晶粒連接件22L可不為凸塊、並且導通孔16L暴露於邏輯裝置10L的背側處之外,邏輯裝置10L可由與關於圖3A描述的邏輯裝置10L類似的材料及類似的方法形成。在邏輯裝置10L的背側處形成介電層104。介電層104由與關於圖2C描述的介電層58類似的材料及類似的方法形成。將晶粒連接件106形成為延伸穿過介電層104。晶粒連接件106可由與關於圖2E描述的晶粒連接件22A類似的材料及類似的
方法形成。舉例而言,晶粒連接件106可為適於與可迴焊連接件一起使用的連接件,例如微凸塊。以與關於圖3C所述者類似的方式利用可迴焊連接件108將邏輯裝置10L的晶粒連接件106連接至記憶體立方體50的晶粒連接件22A。在一些實施例中,以與關於圖3C所述者類似的方式於邏輯裝置10L與記憶體立方體50之間形成底部填充劑110。
在圖5B中,在邏輯裝置10L上且在邏輯裝置10L周圍形成包封體124。包封體124可由與關於圖3D描述的包封體112類似的材料及類似的方法形成。必要時,可對包封體124執行平坦化製程,以暴露出晶粒連接件22L。
在包封體124及邏輯裝置10L的前側上形成介電層126。介電層126可由與關於圖4A描述的介電層208類似的材料及類似的方法形成。
然後形成連接至邏輯裝置10L的UBM 128。UBM 128具有位於介電層126的主表面上並沿著所述主表面延伸的凸塊部分,並且具有延伸穿過介電層126以物理及電性耦合晶粒連接件22L的通孔部分。UBM 128可由與關於圖4A描述的UBM 210類似的材料及類似的方法形成。
在圖5C中,沿著例如在裝置區52A周圍的切割道區執行單體化製程。可藉由鋸切、雷射切割或類似方法進行單體化。單體化製程將裝置區52A(包括記憶體立方體50)與相鄰的裝置區分開,以形成包括記憶體立方體50的HBM裝置100。在單體化
後,記憶體立方體50與包封體124在側向上(在製程變化範圍內)共端。
在UBM 128上形成導電連接件114。導電連接件114可由與關於圖3D描述的導電連接件114類似的材料及類似的方法形成。導電連接件114可在單體化製程之前或之後形成。導電連接件114將用於外部連接(以下進一步論述)。
在單體化之前將邏輯裝置10L貼合至記憶體立方體50有利地允許利用尺寸更小的邏輯裝置。當藉由將邏輯裝置10L貼合至記憶體立方體50來形成HBM裝置100時,邏輯裝置10L將具有比記憶體立方體50更小的寬度。因此,可減少HBM裝置100的水平佔用面積(horizontal footprint)。
圖2A至圖5C示出其中藉由晶圓上晶圓(WoW)堆疊形成記憶體立方體50的實施例,例如其中形成晶圓堆疊且然後將所述晶圓堆疊單體化以形成多個記憶體立方體50的實施例。如下文將更詳細論述,在一些實施例中,記憶體立方體50可藉由晶片上晶片(chip-on-chip,CoC)堆疊來形成,例如,其中晶圓被單體化以形成多個積體電路裝置,並且積體電路裝置被堆疊以形成記憶體立方體50。此種記憶體立方體50亦可用於形成HBM裝置,例如關於圖3A至圖5C描述的該些裝置。
圖6A至圖6F是根據一些其他實施例,在形成記憶體立方體50的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖6A至圖6F示出其中藉由在載體基底52上堆疊多個第一積體電
路裝置來形成記憶體立方體50的製程。第一積體電路裝置可各自具有類似於以上參照圖1論述的積體電路裝置10的結構,並且在實施例中可為記憶體裝置。示出在載體基底52的一個裝置區52A中堆疊第一積體電路裝置以形成記憶體立方體50,但應理解,載體基底52可具有任意數量的裝置區,並且記憶體立方體50可形成於每個裝置區中。以頂部朝下(top-down)(或反向)的方式藉由晶片上晶片(COC)堆疊形成記憶體立方體50,其中提供用於記憶體立方體50的頂層的經單體化的積體電路裝置,並且隨後在頂部積體電路裝置上堆疊用於記憶體立方體50的位於下方的層的經單體化的積體電路裝置。包封記憶體立方體50的每個層。在形成後測試記憶體立方體50,以減少或防止對已知不良記憶體立方體50的後續處理。
在圖6A中,提供載體基底52,且在載體基底52上形成釋放層54。載體基底52可類似於關於圖2A所述者。釋放層54可類似於關於圖2A所述者。
然後在載體基底52上堆疊經單體化的記憶體裝置10A。記憶體裝置10A包括半導體基底12A、內連結構14A、導通孔16A及介電層24A,但在此製程步驟中不包括位於介電層24A中的晶粒連接件。在後續製程步驟期間,可在介電層24A中形成適於與可迴焊連接件一起使用的晶粒連接件,例如微凸塊。
在圖6B中,將經單體化的記憶體裝置10A薄化。薄化可藉由CMP製程、磨削製程、回蝕製程、類似製程或其組合進行,
並且在半導體基底12A的非主動表面上執行。所述薄化暴露出導通孔16A。在薄化之後,導通孔16A的表面與半導體基底12A的非主動表面(在製程變化範圍內)共面。因此,導通孔16A暴露於記憶體裝置10A的背側處。
在圖6C中,在記憶體裝置10A上方堆疊經單體化的記憶體裝置10B。具體而言,將記憶體裝置10B的前側貼合至記憶體裝置10A的背側。記憶體裝置10B包括半導體基底12B、內連結構14B、導通孔16B、晶粒連接件22B及介電層24B。藉由混合接合以背對面的方式直接接合記憶體裝置10A及記憶體裝置10B,使得記憶體裝置10A的背側接合至記憶體裝置10B的前側。可以與關於圖2C所述者類似的方式執行混合接合。舉例而言,可於記憶體裝置10B的背側處形成晶粒連接件60及介電層58。在不使用任何黏著劑材料(例如,晶粒貼合膜)的情況下藉由介電質對介電質接合將介電層58接合至介電層24B,並且在不使用任何共晶材料(例如,焊料)的情況下藉由金屬對金屬接合將晶粒連接件60接合至晶粒連接件22B。
在圖6D中,重複上述步驟,使得在載體基底52上方堆疊經單體化的記憶體裝置10C、10D、10E、10F、10G、10H。記憶體裝置10C、10D、10E、10F、10G、10H中的每一者藉由混合接合以背對面的方式分別直接接合至記憶體裝置10B、10C、10D、10E、10F、10G。所堆疊的最後一個記憶體裝置(例如,記憶體裝置10H)可不被薄化,使得記憶體裝置10H的導通孔16H保持電
性絕緣。
在一些實施例中,圍繞記憶體裝置10A、10B、10C、10D、10E、10F、10G、10H形成介電層64。介電層64填充裝置區52A中的記憶體裝置與相鄰裝置區中的記憶體裝置之間的間隙,因此保護記憶體裝置。介電層64可為:氧化物,例如氧化矽、PSG、BSG、BPSG或類似物;氮化物,例如氮化矽或類似物;聚合物,例如聚苯並噁唑(PBO)、聚醯亞胺、苯並環丁烯(BCB)系聚合物或類似物;包封體,例如模塑化合物,環氧樹脂或類似物;類似物、或其組合。在一些實施例中,介電層64為例如氧化矽等氧化物。
在圖6E中,執行載體基底剝離以自積體電路裝置堆疊(例如,記憶體裝置10A)分離(或「剝離」)載體基底52。根據一些實施例,所述剝離包括將光(例如雷射光或紫外光)投射在釋放層54上,以使得釋放層54在光的熱量下分解,且可移除載體基底52。然後將所述晶圓堆疊翻轉並放置於膠帶(未示出)上。
然後在記憶體裝置10A的前側處形成晶粒連接件22A。晶粒連接件22A可由與關於圖2E所述者類似的材料及類似的方法形成。
在圖6F中,沿著例如在裝置區52A與相鄰裝置區之間的切割道區執行單體化製程。可藉由鋸切、雷射切割或類似方法進行單體化。單體化製程可在形成晶粒連接件22A之前或之後執行。單體化將裝置區52A與相鄰的裝置區分開。所得的經單體化
的記憶體立方體50來自裝置區52A。在單體化後,介電層64在側向上包封記憶體裝置,並且介電層64與記憶體立方體50的側壁在側向上(在製程變化範圍內)共端。
應理解,記憶體立方體50可包括任意數量的層。在所示實施例中,記憶體立方體50包括八層。在另一實施例中,記憶體立方體50包括多於或少於八層,例如兩層、四層、十六層、三十二層或類似數量的層。
在完成記憶體立方體50的形成後(例如,在形成晶粒連接件22A及單體化記憶體立方體50之後),使用探針62測試所得的記憶體立方體50。探針62物理及電性連接至晶粒連接件22A。晶粒連接件22A用於測試記憶體立方體50,使得僅已知良好的記憶體立方體被用於進一步的製程。測試可包括測試記憶體裝置10A、10B、10C、10D、10E、10F、10G、10H的功能,或者可包括測試基於記憶體裝置的設計可能預期的已知開路或短路。在測試期間,可以菊花鏈方式測試記憶體立方體50的所有記憶體裝置。
隨後,可使用記憶體立方體50形成高頻寬記憶體(HBM)裝置。圖7至圖9是根據一些實施例的實施記憶體立方體50的HBM裝置100的剖視圖。
圖7示出其中藉由在第二積體電路裝置(例如,邏輯裝置10L)上堆疊記憶體立方體50而形成HBM裝置100的實施例。除了藉由CoC堆疊形成的記憶體立方體50(例如,藉由關於圖6A至圖6F描述的製程形成的記憶體立方體)之外,可藉由與關於圖
3A至圖3D所述者類似的製程形成圖7的HBM裝置100。
圖8示出其中藉由在包括第二積體電路裝置(例如,邏輯裝置10L)的封裝組件200上堆疊記憶體立方體50而形成HBM裝置100的實施例。除了藉由CoC堆疊形成的記憶體立方體50(例如,藉由關於圖6A至圖6F描述的製程形成的記憶體立方體)之外,可藉由與關於圖4A至圖4D所述者類似的製程形成圖7的HBM裝置100。
圖9示出其中藉由在將記憶體立方體50單體化之前在記憶體立方體50上堆疊第二積體電路裝置(例如,邏輯裝置10L)而形成HBM裝置100的實施例。除了藉由CoC堆疊形成的記憶體立方體50(例如,藉由關於圖6A至圖6F描述的製程形成的記憶體立方體)之外,可藉由與關於圖5A至圖5C所述者類似的製程形成圖7的HBM裝置100。
圖2A至圖9示出其中記憶體立方體50被形成為僅包括記憶體裝置的實施例。如下文將更詳細論述,在一些實施例中,記憶體立方體50可被形成為包括其他裝置,例如被記憶體立方體的記憶體裝置使用的被動裝置。
圖10A至圖10E是根據一些實施例,在形成記憶體立方體50的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖10A至10E示出其中藉由在載體基底52上堆疊包括第一積體電路裝置的多個晶圓來形成記憶體立方體50的製程。第一積體電路裝置可各自具有類似於以上參照圖1論述的積體電路裝置10的結
構,並且在實施例中可為記憶體裝置。在此實施例中,在晶圓堆疊中、例如在晶圓堆疊的中間水平高度處包括被動裝置。將晶圓堆疊單體化以形成多個記憶體立方體50。示出在載體基底52的一個裝置區52A中堆疊晶圓以形成記憶體立方體50,但應理解,載體基底52可具有任意數量的裝置區,並且記憶體立方體50可形成於每個裝置區中。以頂部朝下(或反向)的方式藉由晶圓上晶圓(WoW)堆疊形成記憶體立方體50,其中提供用於記憶體立方體50的頂層的晶圓,並且隨後在頂部晶圓上堆疊用於記憶體立方體50的位於下方的層的晶圓。此實施例中的被動裝置包括在堆疊的中間層中。在形成後測試記憶體立方體50,以減少或防止對已知不良記憶體立方體50的後續處理。
在圖10A中,提供載體基底52,且在載體基底52上形成釋放層54。載體基底52可類似於關於圖2A所述者。釋放層54可類似於關於圖2A所述者。
然後藉由執行/重複關於圖2A至圖2C描述的步驟在載體基底52上方堆疊晶圓56A、56B、56C、56D。晶圓56A、56B、56C、56D各自包括多個積體電路裝置,例如分別為在裝置區52A中的記憶體裝置10A、10B、10C、10D。記憶體裝置10A、10B、10C、10D將在後續製程中被單體化,以被包括在記憶體立方體50中。晶圓56A堆疊在載體基底52上。晶圓56B、56C、56D中的每一者藉由混合接合以背對面的方式分別直接接合至晶圓56A、56B、56C。
在晶圓56D的背側處形成介電層66及晶粒連接件68。介電層66可由與關於圖2C描述的介電層58類似的材料及類似的方法形成。晶粒連接件68可由與關於圖2C描述的晶粒連接件60類似的材料及類似的方法形成。晶粒連接件68物理連接至導通孔16D,並且藉由導通孔16D電性連接至記憶體裝置10D的積體電路。
在圖10B中,將被動裝置70接合至記憶體裝置10D,例如接合至晶圓56D。被動裝置70可為積體被動裝置(integrated passive device,IPD)、電源管理積體電路(power management integrated circuit,PMIC)、積體電壓調節器(integrated voltage regulator,IVR)或類似裝置。在一些實施例中,被動裝置70為記憶體立方體50中的用於記憶體裝置的IVR。被動裝置70包括基底72(其可類似於關於圖1描述的半導體基底12),但更包括被動裝置(例如,電阻器、電容器、電感器等)並且可不具有主動裝置(例如,電晶體、二極體等)。被動裝置70更包括位於被動裝置70前側處的導通孔74、晶粒連接件76及介電層78、以及位於被動裝置70背側處的晶粒連接件80及介電層82。導通孔74將晶粒連接件76連接至晶粒連接件80。被動裝置70是藉由混合接合而接合至記憶體裝置10D的經單體化的裝置,使得記憶體裝置10D的背側接合至被動裝置70的前側。舉例而言,在不使用任何黏著劑材料(例如,晶粒貼合膜)的情況下藉由介電質對介電質接合將介電層66接合至介電層78,並且在不使用任何共晶材料
(例如,焊料)的情況下藉由金屬對金屬接合將晶粒連接件的第一子集(subset)68A接合至晶粒連接件76。
然後在被動裝置70周圍形成介電層84。介電層84可在放置被動裝置70之後但在退火以完成混合接合之前形成,或者可在退火之後形成。介電層84填充裝置區52A中的被動裝置70與相鄰裝置區中的被動裝置之間的間隙,因此保護被動裝置。介電層84可由與關於圖6D描述的介電層64類似的材料及類似的方法形成。在一些實施例中,介電層84為例如氧化矽等氧化物。
然後形成導通孔86以延伸穿過介電層84。作為形成導通孔86的實例,在介電層84中圖案化出開口。所述圖案化可藉由可接受的製程來進行,例如在介電層84為感光性材料時藉由將介電層84暴露至光,或者藉由使用例如非等向性蝕刻(anisotropic etch)蝕刻介電層84來進行。開口暴露出晶粒連接件的第二子集68B。在介電層84上及晶粒連接件68B的被開口暴露出的一些部分上形成晶種層。在一些實施例中,晶種層為金屬層,所述金屬層可為單層或包括由不同材料形成的多個子層的複合層。在特定實施例中,晶種層包括鈦層及位於所述鈦層之上的銅層。可使用例如PVD或類似方法來形成晶種層。在晶種層上形成導電材料。導電材料可藉由鍍覆(例如,電鍍或無電鍍覆)或類似方法形成。所述導電材料可包括金屬,例如銅、鈦、鎢、鋁或類似物。然後移除晶種層及導電材料的多餘部分,所述多餘部分是位於介電層84上方的部分。所述移除可藉由平坦化製程進行。對晶種層、導
電材料、介電層84及被動裝置70執行平坦化製程。所述移除同時移除晶種層及導電材料的多餘部分,並暴露出晶粒連接件80及介電層82。平坦化製程可為例如CMP製程、磨削製程、回蝕製程、類似製程或其組合。開口中的晶種層及導電材料的剩餘部分形成導通孔86。在平坦化製程之後,導通孔86、介電層84、介電層82及晶粒連接件80的頂表面(在製程變化範圍內)共面。
在圖10C中,藉由執行/重複關於圖2A至圖2C描述的步驟而在載體基底52上方堆疊晶圓56E、56F、56G、56H。晶圓56E、56F、56G、56H各自包括多個積體電路裝置,例如分別為裝置區52A中的記憶體裝置10E、10F、10G、10H。記憶體裝置10E、10F、10G、10H將在後續製程中被單體化,以被包括在記憶體立方體50中。將晶圓56E接合至被動裝置70,其中介電層84及導通孔86的一些部分參與混合接合。舉例而言,在不使用任何黏著劑材料(例如,晶粒貼合膜)的情況下藉由介電質對介電質接合將介電層24E接合至介電層82及介電層84,並且在不使用任何共晶材料(例如,焊料)的情況下藉由金屬對金屬接合將晶粒連接件22E接合至晶粒連接件80及導通孔86。晶圓56F、56G、56H中的每一者藉由混合接合以背對面的方式分別直接接合至晶圓56E、56F、56G。所堆疊的最後一個晶圓(例如,晶圓56H)可不被薄化,使得晶圓56H的導通孔16H保持電性絕緣。
在圖10D中,執行載體基底剝離以自積體電路裝置堆疊(例如,記憶體裝置10A)分離(或「剝離」)載體基底52。根據
一些實施例,所述剝離包括將光(例如雷射光或紫外光)投射在釋放層54上,以使得釋放層54在光的熱量下分解,且可移除載體基底52。然後將所述晶圓堆疊翻轉並放置於膠帶(未示出)上。
然後在記憶體裝置10A的前側處形成晶粒連接件22A。晶粒連接件22A可由與關於圖2E所述者類似的材料及類似的方法形成。
在圖10E中,沿著例如在裝置區52A與相鄰裝置區之間的切割道區執行單體化製程。可藉由鋸切、雷射切割或類似方法進行單體化。單體化製程可在形成晶粒連接件22A之前或之後執行。單體化將裝置區52A與相鄰的裝置區分開。所得的經單體化的記憶體立方體50來自裝置區52A。
應理解,記憶體立方體50可包括任意數量的層。在所示實施例中,記憶體立方體50包括八層記憶體裝置及一層被動裝置。在另一實施例中,記憶體立方體50包括多於或少於八層記憶體裝置,例如兩層、四層、十六層、三十二層或類似層數的記憶體裝置。記憶體立方體50亦可包括多於一層的被動裝置。
在完成記憶體立方體50的形成後(例如,在形成晶粒連接件22A及單體化記憶體立方體50之後),使用探針62測試所得的記憶體立方體50。探針62物理及電性連接至晶粒連接件22A。晶粒連接件22A用於測試記憶體立方體50,使得僅已知良好的記憶體立方體被用於進一步的製程。測試可包括測試記憶體裝置10A、10B、10C、10D、10E、10F、10G、10H及被動裝置
70的功能,或者可包括測試基於記憶體裝置的設計可能預期的已知開路或短路。在測試期間,可以菊花鏈方式測試記憶體立方體50的所有裝置。
隨後,可使用記憶體立方體50形成高頻寬記憶體(HBM)裝置。圖11是根據一些其他實施例的實施記憶體立方體50的HBM裝置100的剖視圖。圖11示出其中藉由在第二積體電路裝置(例如,邏輯裝置10L)上堆疊記憶體立方體50而形成HBM裝置100的實施例。除了包括被動裝置70的記憶體立方體50(例如,藉由關於圖10A至圖10E描述的製程形成的記憶體立方體)之外,可藉由與關於圖3A至圖3D所述者類似的製程形成圖11的HBM裝置100。
儘管圖10A至10E示出其中藉由晶圓上晶圓(WoW)堆疊形成具有被動裝置70的記憶體立方體50的實施例,但應理解,亦可藉由晶片上晶片(CoC)堆疊(例如,藉由圖6A至圖6F中所示的製程)形成具有被動裝置70的記憶體立方體50。圖12是根據一些實施例的實施此種記憶體立方體50的HBM裝置100的剖視圖。圖12示出其中藉由在例如裸晶粒等第二積體電路裝置(例如,邏輯裝置10L)上堆疊記憶體立方體50而形成HBM裝置100的實施例。
除了包括被動裝置70的記憶體立方體50之外,藉由與關於圖3A至圖3D所述者類似的製程形成圖11及圖12的HBM裝置100。還應理解,除了包括被動裝置70的記憶體立方體50
之外,亦可藉由與關於圖4A至圖4D及圖5A至圖5C所述者類似的製程形成HBM裝置。
圖13示出根據一些其他實施例的HBM裝置100。如以下將更詳細論述,圖13示出其中在第二積體電路裝置(例如,邏輯裝置10L)上堆疊多個記憶體立方體(例如,記憶體立方體50A及記憶體立方體50B)的裝置。包封體112因此圍繞記憶體立方體50A及50B兩者。記憶體立方體50A及50B是已經過測試的已知良好的記憶體立方體。記憶體立方體50A可以與關於圖3C所述者類似的方式貼合至晶圓102。在所示實施例中,晶粒連接件116及介電層118形成於記憶體立方體50A的底部裝置的背側處。晶粒連接件116可由與關於圖2E描述的晶粒連接件22A類似的材料及類似的方法形成。介電層118可由與關於圖2C描述的介電層58類似的材料及類似的方法形成。
可利用可迴焊連接件120將記憶體立方體50B貼合至記憶體立方體50A。可迴焊連接件120可由與關於圖3C描述的可迴焊連接件108類似的材料及類似的方法形成。可迴焊連接件120用於將記憶體立方體50A的晶粒連接件116連接至記憶體立方體50B的晶粒連接件22A。
在一些實施例中,在記憶體立方體50A與記憶體立方體50B之間、環繞可迴焊連接件120形成底部填充劑122。底部填充劑122可減小應力並保護由對可迴焊連接件120進行迴焊而形成的接頭。底部填充劑122可在貼合記憶體立方體50A及50B後藉
由毛細流動製程形成,或者可在貼合記憶體立方體50A及50B前藉由合適的沈積方法形成。
除了多個記憶體立方體50A及50B之外,藉由與關於圖3A至圖3D所述者類似的製程形成圖13的HBM裝置100。還應理解,除了多個記憶體立方體50A及50B之外,亦可藉由與關於圖4A至圖4D及圖5A至圖5C所述者類似的製程形成HBM裝置。
圖13中的記憶體立方體50類似於關於圖2F所述者。還應理解,可使用關於圖6F、圖11及圖12描述的記憶體立方體50來形成類似於圖13所示者的HBM裝置。
圖14A及圖14B是根據一些實施例,在形成積體電路封裝的製程期間的中間步驟的剖視圖。如將在以下更詳細論述,圖14A及圖14B示出以下製程:將HBM裝置100封裝至例如CoW封裝等積體電路封裝300(參見圖14A)中。然後將積體電路封裝300安裝至封裝基底400(參見圖14B)以形成另一封裝,例如CoWoS封裝。藉由在晶圓302上堆疊HBM裝置100及第三積體電路裝置而形成積體電路封裝300。第三積體電路裝置可具有類似於以上參照圖1論述的積體電路裝置10的結構,並且在實施例中可為處理器裝置。示出在晶圓302的一個封裝區302A中形成積體電路封裝,但應理解,晶圓302可具有任意數量的裝置區,並且HBM裝置100可堆疊於每個裝置區中。
在圖14A中,獲得晶圓302。晶圓302包括位於封裝區302A中的中介層304。中介層304將在後續處理中被單體化,以
被包括在積體電路封裝300中。中介層304包括半導體基底306、內連結構308、導通孔310及晶粒連接件312。除了半導體基底306可不具有主動/被動裝置、並且晶粒連接件312可為適於與可迴焊連接件一起使用的連接件(例如,微凸塊)之外,半導體基底306、內連結構308、導通孔310及晶粒連接件312可分別類似於以上參照圖1論述的積體電路裝置10的半導體基底12、內連結構14、導通孔16及晶粒連接件22。中介層304更包括外部連接件314,其可類似於晶粒連接件312,並且連接至導通孔310。
將HBM裝置100及處理器裝置10P貼合至晶圓302,例如貼合至中介層304的內連結構308。處理器裝置10P可為處理單元,例如CPU、GPU、SoC或類似物。處理器裝置10P包括半導體基底12P、內連結構14P、晶粒連接件22P、介電層24P及導電連接件26P。處理器裝置10P不具有TSV,並且晶粒連接件22P可為適於與可迴焊連接件一起使用的連接件,例如微凸塊。導電連接件26P可由與關於圖3D描述的導電連接件114類似的材料及類似的方法形成。可藉由對導電連接件114進行迴焊而將HBM裝置100貼合至晶圓302的晶粒連接件312,並且可藉由對導電連接件26P進行迴焊而將處理器裝置10P貼合至晶圓302的晶粒連接件312。
在一些實施例中,在晶圓302與HBM裝置100及處理器裝置10P中的每一者之間、圍繞導電連接件26P及導電連接件114形成底部填充劑316。底部填充劑316可由與關於圖3C描述
的底部填充劑110類似的材料及類似的方法形成。
然後在各種組件上且在各種組件周圍形成包封體318。在形成後,包封體318包封HBM裝置100及處理器裝置10P,並接觸底部填充劑316。包封體318可由與關於圖3D描述的包封體112類似的材料及類似的方法形成。可選擇性地對包封體318執行平坦化製程,以暴露出HBM裝置100及/或處理器裝置10P。
在外部連接件314上形成導電連接件320。導電連接件320可由與關於圖3D描述的導電連接件114類似的材料及類似的方法形成。
在圖14B中,藉由沿著例如在封裝區302A與相鄰的封裝區之間的切割道區進行鋸切來執行單體化製程。所述鋸切將封裝區302A單體化。所得的經單體化的積體電路封裝300來自封裝區302A。
然後,可使用導電連接件320將積體電路封裝300安裝至封裝基底400。封裝基底400包括基底芯402及位於基底芯402上方的接合接墊404。基底芯402可由例如矽、鍺、金剛石或類似物等半導體材料製成。作為另一選擇,亦可使用例如矽鍺、碳化矽、砷化鎵、砷化銦、磷化銦、碳化矽鍺、砷磷化鎵、磷化鎵銦、其組合及類似物等化合物材料。另外,基底芯402可為SOI基底。一般而言,SOI基底包括例如磊晶矽、鍺、矽鍺、SOI、SGOI或其組合等半導體材料層。在一個替代實施例中,基底芯402是基於絕緣芯(例如被纖維玻璃強化的樹脂芯)。一種示例性芯材料為
玻璃纖維樹脂,例如FR4。所述芯材料的替代材料包括雙馬來醯亞胺三嗪BT樹脂(bismaleimide-triazine BT resin),或者作為另一選擇,為其他印刷電路板(printed circuit board,PCB)材料或膜。可對基底芯402使用例如ABF等構成膜(build up film)或其他疊層(laminate)。
基底芯402可包括主動裝置及被動裝置(未示出)。可使用例如電晶體、電容器、電阻器、其組合及類似物等各種各樣的裝置來產生裝置堆疊的設計的結構性要求及功能性要求。可使用任何適合的方法來形成所述裝置。
基底芯402亦可包括金屬化層及通孔(未示出),其中接合接墊404物理及/或電性耦合至所述金屬化層及通孔。金屬化層可形成在主動裝置及被動裝置之上並被設計成連接各種裝置以形成功能性電路系統。金屬化層可由交替的介電材料(例如低介電常數介電材料)層與導電材料(例如銅)層形成且可藉由任何適合的製程(例如沈積、鑲嵌、雙鑲嵌或類似方法)來形成,其中由通孔對各層導電材料進行內連。在一些實施例中,基底芯402實質上不具有主動裝置及被動裝置。
在一些實施例中,將導電連接件320迴焊以將外部連接件314貼合至接合接墊404。導電連接件320將封裝基底400(包括位於基底芯402中的金屬化層)電性及/或物理耦合至積體電路封裝300。在一些實施例中,在基底芯402上形成阻焊劑。導電連接件320可於阻焊劑中的開口中被設置成電性及機械耦合至接合
接墊404。阻焊劑可用於保護基底芯402的一些區域免受外部損壞。
在一些實施例中,可在積體電路封裝300與封裝基底400之間並圍繞導電連接件320形成底部填充劑406,以減小應力並保護由對導電連接件320進行迴焊而形成的接頭。底部填充劑406可在積體電路封裝300被貼合之後藉由毛細流動製程而形成,或者可在積體電路封裝300被貼合之前藉由適合的沈積方法而形成。在對導電連接件320進行迴焊之前在導電連接件320上可形成有環氧樹脂助焊劑(未示出),其中環氧樹脂焊劑的環氧樹脂部分中的至少一些在積體電路封裝300被貼合至封裝基底400之後餘留下來。此餘留的環氧樹脂部分可充當底部填充劑406。
在一些實施例中,亦可將被動裝置(例如,表面安裝裝置(surface mount device,SMD),未示出)貼合至積體電路封裝300(例如,貼合至外部連接件314)或貼合至封裝基底400(例如,貼合至接合接墊404)。舉例而言,可將被動裝置接合至積體電路封裝300或封裝基底400的與導電連接件320所接合的相同的表面。被動裝置可在將積體電路封裝300安裝在封裝基底400上之前貼合至積體電路封裝300,或者可在將積體電路封裝300安裝在封裝基底400上之前或之後貼合至封裝基底400。
圖15A至圖15C是根據一些實施例,在形成積體電路封裝的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖15A至圖15C示出以下製程:將HBM裝置100封裝在積體電路封裝
500(參見圖15B)中。然後將積體電路封裝500安裝至封裝基底400(參見圖15C)以形成另一封裝。積體電路封裝500形成於載體基底502上(參見圖15A)。示出在載體基底502的一個封裝區502A中形成積體電路封裝500,但應理解,載體基底502可具有任意數量的封裝區,並且積體電路封裝可形成於每個封裝區中。
在圖15A中,提供載體基底502,且在載體基底502上形成釋放層504。載體基底502可類似於關於圖2A描述的載體基底52。釋放層504可類似於關於圖2A描述的釋放層54。
在釋放層504上形成重佈線結構506。重佈線結構506包括介電層508及介電層508中的金屬化圖案510(有時被稱為重佈線層或重佈線走線)。舉例而言,重佈線結構506可包括由相應的介電層508彼此分隔開的多個金屬化圖案510。
在一些實施例中,由聚合物形成介電層508,所述聚合物可為可使用微影罩幕進行圖案化的感光性材料,例如PBO、聚醯亞胺、BCB系聚合物或類似物。在其他實施例中,介電層508由以下材料形成:氮化物,例如氮化矽;氧化物,例如氧化矽、PSG、BSG、BPSG;或類似材料。可藉由旋轉塗佈、疊層、CVD、類似製程、或其組合來形成介電層508。在形成每一介電層508之後,接著將所述介電層508圖案化以暴露出位於下方的導電特徵,例如位於下方的金屬化圖案510的一些部分。所述圖案化可藉由可接受的製程來進行,例如藉由在介電層508為感光性材料時將介電層暴露至光或者藉由使用例如非等向性蝕刻進行蝕刻來
進行。若介電層508為感光性材料,則介電層508可在所述暴露之後被顯影。
金屬化圖案510各自包括導通孔及/或導電線。導通孔延伸穿過介電層508,並且導電線沿著介電層508延伸。作為形成金屬化圖案的實例,在位於下方的導電特徵上方形成晶種層(未示出)。在一些實施例中,晶種層為金屬層,所述金屬層可為單層或包括由不同材料形成的多個子層的複合層。在一些實施例中,晶種層包括鈦層及位於所述鈦層之上的銅層。可使用例如PVD或類似製程等沈積製程來形成晶種層。然後在晶種層上形成光阻並將所述光阻圖案化。可藉由旋轉塗佈或類似方法來形成光阻且可將所述光阻暴露至光以進行圖案化。光阻的圖案對應於金屬化圖案。所述圖案化會形成穿過光阻的開口以暴露出晶種層。在光阻的開口中及在晶種層的被暴露出的部分上形成導電材料。導電材料可藉由鍍覆(例如,電鍍或無電鍍覆)或類似方法形成。所述導電材料可包括金屬或金屬合金,例如銅、鈦、鎢、鋁、類似物或其組合。然後,移除光阻以及晶種層的上面未形成有導電材料的部分。可藉由例如使用氧電漿或類似物的可接受的灰化製程或剝除製程來移除光阻。一旦光阻被移除,便例如使用可接受的蝕刻製程(例如藉由濕式蝕刻或乾式蝕刻)來移除晶種層的被暴露出的部分。晶種層的剩餘部分及導電材料的剩餘部分形成重佈線結構506的一個層級的金屬化圖案。
可在重佈線結構506中形成較圖示更多或更少的介電層
508及金屬化圖案510。在一些實施例中,重佈線結構506是包括第一部分506A及第二部分506B的晶圓級重佈線結構,其中第一部分506A包括薄介電層508及薄金屬化圖案510,且第二部分506B包括厚介電層508及厚金屬化圖案510。
將導電連接件512形成為連接至重佈線結構506的金屬化圖案510。可將重佈線結構506的頂部介電層508圖案化以暴露出位於下方的金屬化圖案510的一些部分。在一些實施例中,可在開口中形成凸塊下金屬(UBM)。在UBM上形成導電連接件512。導電連接件512可由與關於圖3D描述的導電連接件114類似的材料及類似的方法形成。
在圖15B中,執行載體基底剝離以自重佈線結構506(例如,底部介電層508)分離(剝離)載體基底502。根據一些實施例,所述剝離包括將光(例如雷射光或紫外光)投射在釋放層504上,以使得釋放層504在光的熱量下分解,且可移除載體基底502。然後可將所述結構翻轉並放置於例如膠帶上。
將HBM裝置100及處理器裝置10P貼合至重佈線結構506。處理器裝置10P可為處理單元,例如CPU、GPU、SoC或類似物。處理器裝置10P可類似於關於圖14A所述者。
在所示的實施例中,使用導電連接件114將HBM裝置100貼合至重佈線結構506,並且使用導電連接件26P將處理器裝置10P貼合至重佈線結構506。舉例而言,可形成延伸穿過重佈線結構506的底部介電層508以連接至重佈線結構506的金屬化圖
案510的UBM。導電連接件26P、114可接觸UBM並被迴焊以將HBM裝置100及處理器裝置10P貼合至重佈線結構506。
在一些實施例中,在重佈線結構506與HBM裝置100及處理器裝置10P中的每一者之間、圍繞導電連接件26P及導電連接件114形成底部填充劑514。底部填充劑514可由與關於圖3C描述的底部填充劑110類似的材料及類似的方法形成。
然後在各種組件上且在各種組件周圍形成包封體516。在形成後,包封體516包封HBM裝置100及處理器裝置10P,並接觸底部填充劑514。包封體516可由與關於圖3D描述的包封體112類似的材料及類似的方法形成。可選擇性地對包封體516執行平坦化製程,以暴露出HBM裝置100及處理器裝置10P。
在圖15C中,藉由沿著例如在封裝區502A與相鄰的封裝區之間的切割道區進行鋸切而執行單體化製程。鋸切將封裝區502A單體化。所得的經單體化的積體電路封裝500來自封裝區502A。在單體化後,重佈線結構506及包封體516在側向上(在製程變化範圍內)共端。
然後,使用導電連接件512將積體電路封裝500貼合至封裝基底400。封裝基底400可類似於關於圖14B所述者。舉例而言,封裝基底400可包括連接至導電連接件512的接合接墊404。在一些實施例中,可於積體電路封裝500與封裝基底400之間、並且圍繞導電連接件512形成底部填充劑406。
圖16A至圖16F是根據一些實施例,在形成積體電路封
裝的製程期間的中間步驟的剖視圖。如下文將更詳細論述,圖16A至圖16F示出以下製程:將HBM裝置100封裝於積體電路封裝600(參見圖16E)中。然後將積體電路封裝500安裝至封裝基底400(參見圖16F)以形成另一封裝。於載體基底602上形成積體電路封裝600(參見圖16A)。示出在載體基底602的一個封裝區602A中形成積體電路封裝600,但應理解,載體基底602可具有任意數量的封裝區,並且積體電路封裝可形成於每個封裝區中。
在圖16A中,提供載體基底602,且在載體基底602上形成釋放層604。載體基底602可類似於關於圖2A所述的載體基底52。釋放層604可類似於關於圖2A所述的釋放層54。
然後在釋放層604上形成重佈線結構606。可以與關於圖15A所述的重佈線結構506類似的方式及類似的材料形成重佈線結構606。重佈線結構606包括介電層608及介電層608中的金屬化圖案610(有時被稱為重佈線層或重佈線走線)。
在圖16B中,將導通孔612形成為連接至重佈線結構606的金屬化圖案610。作為形成導通孔612的實例,可在重佈線結構606的頂部介電層608中形成開口。然後在重佈線結構606上方(例如,在頂部介電層608上及金屬化圖案610的被頂部介電層608中的開口暴露出的一些部分上)形成晶種層。在一些實施例中,晶種層為金屬層,所述金屬層可為單層或包括由不同材料形成的多個子層的複合層。在特定實施例中,晶種層包括鈦層及位於所述鈦層之上的銅層。可使用例如PVD或類似方法來形成
晶種層。在晶種層上形成光阻並將所述光阻圖案化。可藉由旋轉塗佈或類似方法來形成光阻且可將所述光阻暴露至光以進行圖案化。光阻的圖案對應於導通孔。所述圖案化會形成穿過光阻的開口以暴露出晶種層。在光阻的開口中及在晶種層的被暴露出的部分上形成導電材料。導電材料可藉由鍍覆(例如,電鍍或無電鍍覆)或類似方法形成。所述導電材料可包括金屬,例如銅、鈦、鎢、鋁或類似物。移除光阻以及晶種層的上面未形成有導電材料的部分。可藉由例如使用氧電漿或類似物的可接受的灰化製程或剝除製程來移除光阻。一旦光阻被移除,便例如使用可接受的蝕刻製程(例如藉由濕式蝕刻或乾式蝕刻)來移除晶種層的被暴露出的部分。晶種層的剩餘部分及導電材料的剩餘部分形成導通孔612。
將橋接晶粒614放置在重佈線結構506(例如,頂部介電層508)上。橋接晶粒614可為中介層、TSV晶粒或類似物。在一些實施例中,橋接晶粒614包括半導體基底616及延伸穿過半導體基底616的TSV 618。半導體基底616可為塊狀基底,或者可為包括主動裝置及/或被動裝置的基底。
在圖16C中,在導通孔612及橋接晶粒614上且在導通孔612及橋接晶粒614周圍形成包封體620。在形成後,包封體620包封導通孔612及橋接晶粒614。包封體620可為模塑化合物、環氧樹脂或類似物。包封體620可藉由壓縮模塑、轉移模塑或類似模塑施加,且可形成於載體基底602之上以使得橋接晶粒614
及/或導通孔612被掩埋或覆蓋。包封體620可以液體或半液體形式施加,接著隨後被固化。然後可對包封體620執行平坦化製程,以暴露出導通孔612及橋接晶粒614。平坦化製程可移除包封體620的材料,直至導通孔612及TSV 618被暴露出。在平坦化製程之後,經平坦化的組件的頂表面(在製程變化範圍內)是共面的。平坦化製程可為例如化學機械研磨(CMP)、磨削製程、回蝕、或類似製程。在一些實施例中,舉例而言,若已暴露出導通孔612及TSV 618,則可省略平坦化。
在圖16D中,在包封體620、橋接晶粒614及導通孔612上形成重佈線結構622。可以與關於圖15A所述的重佈線結構506類似的方式及類似的材料形成重佈線結構622。重佈線結構622包括介電層624及介電層624中的金屬化圖案626(有時被稱為重佈線層或重佈線走線)。
將導電連接件628形成為連接至重佈線結構622的金屬化圖案626。可將重佈線結構622的頂部介電層624圖案化以暴露出位於下方的金屬化圖案626的一些部分。在一些實施例中,可於開口中形成凸塊下金屬(UBM)。於UBM上形成導電連接件628。可以與關於圖3D所述的導電連接件114類似的方式及類似的材料形成導電連接件628。
在圖16E中,執行載體基底剝離以自重佈線結構606(例如,底部介電層608)分離(剝離)載體基底602。根據一些實施例,所述剝離包括將光(例如雷射光或紫外光)投射在釋放層604
上,以使得釋放層604在光的熱量下分解,且可移除載體基底602。然後可將所述結構翻轉並放置於例如膠帶上。
將HBM裝置100及處理器裝置10P貼合至重佈線結構606。處理器裝置10P可為處理單元,例如CPU、GPU、SoC或類似物。處理器裝置10P可類似於關於圖14A所述的裝置。
在所示的實施例中,使用導電連接件114將HBM裝置100貼合至重佈線結構606,並且使用導電連接件26P將處理器裝置10P貼合至重佈線結構606。舉例而言,可形成延伸穿過重佈線結構606的底部介電層608以連接至重佈線結構606的金屬化圖案610的UBM。導電連接件26P、114可接觸UBM並被迴焊以將HBM裝置100及處理器裝置10P貼合至重佈線結構606。
在一些實施例中,在重佈線結構606與HBM裝置100及處理器裝置10P中的每一者之間、圍繞導電連接件26P及導電連接件114形成底部填充劑630。底部填充劑630可由與關於圖3C描述的底部填充劑110類似的材料及類似的方法形成。
然後在各種組件上且在各種組件周圍形成包封體632。在形成後,包封體632包封HBM裝置100及處理器裝置10P,並接觸底部填充劑630。包封體632可由與關於圖3D描述的包封體112類似的材料及類似的方法形成。可選擇性地對包封體632執行平坦化製程,以暴露出HBM裝置100及處理器裝置10P。
在圖16F中,藉由沿著例如在封裝區602A與相鄰的封裝區之間的切割道區進行鋸切而執行單體化製程。鋸切將封裝區
602A單體化。所得的經單體化的積體電路封裝600來自封裝區602A。在單體化後,重佈線結構606、包封體620、重佈線結構622及包封體632(參見圖16E)在側向上(在製程變化範圍內)共端。
然後,使用導電連接件628將積體電路封裝600貼合至封裝基底400。封裝基底400可類似於關於圖14B所述者。舉例而言,封裝基底400可包括連接至導電連接件628的接合接墊404。在一些實施例中,可於積體電路封裝600與封裝基底400之間、並且圍繞導電連接件628形成底部填充劑406。
實施例可達成優點。相較於藉由其他方式(例如,焊料接合)接合記憶體裝置,藉由利用混合接合堆疊記憶體裝置來形成記憶體立方體允許記憶體立方體的電性效能及熱效能得到改善。在形成之後測試記憶體立方體允許避免對不良的記憶體立方體進行處理,藉此降低製造成本。此外,在記憶體立方體的頂部記憶體裝置中形成晶粒連接件(例如,導電凸塊)允許記憶體立方體利用可迴焊連接件以較低成本的方式貼合至邏輯裝置。
在實施例中,一種方法包括:利用介電質對介電質接合鍵且利用金屬對金屬接合鍵將第一記憶體裝置的背側接合至第二記憶體裝置的前側;在所述接合之後,在所述第一記憶體裝置的前側處形成穿過第一介電層的第一導電凸塊,所述第一導電凸塊自所述第一介電層的主表面凸起;使用所述第一導電凸塊測試所述第一記憶體裝置及所述第二記憶體裝置;以及在所述測試之
後,利用可迴焊連接件將邏輯裝置貼合至所述第一導電凸塊。
在所述方法的一些實施例中,將所述第一記憶體裝置的所述背側接合至所述第二記憶體裝置的所述前側包括利用介電質對介電質接合鍵且利用金屬對金屬接合鍵將第一晶圓的背側接合至第二晶圓的前側,所述第一晶圓包括所述第一記憶體裝置,所述第二晶圓包括所述第二記憶體裝置,所述方法更包括:在所述接合之後,將所述第一記憶體裝置及所述第二記憶體裝置單體化。在所述方法的一些實施例中,將所述第一記憶體裝置的所述背側接合至所述第二記憶體裝置的所述前側包括利用介電質對介電質接合鍵且利用金屬對金屬接合鍵將第一積體電路晶粒的背側接合至第二積體電路晶粒的前側,所述方法更包括:在所述接合之後,在所述第一積體電路晶粒及所述第二積體電路晶粒周圍形成第二介電層。在所述方法的一些實施例中,將所述第一記憶體裝置的所述背側接合至所述第二記憶體裝置的所述前側包括:將所述第二記憶體裝置抵靠所述第一記憶體裝置並對所述第二記憶體裝置進行按壓;以及對所述第一記憶體裝置及所述第二記憶體裝置進行退火。在一些實施例中,所述方法更包括:利用介電質對介電質接合鍵且利用金屬對金屬接合鍵將被動裝置的前側接合至所述第二記憶體裝置的背側;在所述被動裝置周圍形成第二介電層;形成延伸穿過所述第二介電層的導通孔;以及利用金屬對金屬接合鍵將第三記憶體裝置的前側接合至所述導通孔及所述被動裝置的背側,並利用介電質對介電質接合鍵將所述第三記憶體
裝置的所述前側接合至所述第二介電層及所述被動裝置的所述背側。在所述方法的一些實施例中,所述利用所述可迴焊連接件將所述邏輯裝置貼合至所述第一導電凸塊包括:獲得包括所述邏輯裝置及第二導電凸塊的晶圓,所述第二導電凸塊設置於所述晶圓的背側處;以及利用所述可迴焊連接件將所述第一導電凸塊焊接至所述第二導電凸塊。在所述方法的一些實施例中,利用所述可迴焊連接件將所述邏輯裝置貼合至所述第一導電凸塊包括:形成包括所述邏輯裝置、包封體及第二導電凸塊的封裝組件,所述包封體圍繞所述邏輯裝置,所述第二導電凸塊連接至所述邏輯裝置;以及利用所述可迴焊連接件將所述第一導電凸塊焊接至所述第二導電凸塊。在所述方法的一些實施例中,利用所述可迴焊連接件將所述邏輯裝置貼合至所述第一導電凸塊包括:獲得積體電路晶粒,所述積體電路晶粒在所述積體電路晶粒的背側包括第二導電凸塊;以及利用所述可迴焊連接件將所述第一導電凸塊焊接至所述第二導電凸塊。在所述方法的一些實施例中,所述邏輯裝置是用於所述第一記憶體裝置及所述第二記憶體裝置的介面裝置,所述方法更包括:將所述介面裝置及處理器裝置貼合至中介層;以及將所述中介層貼合至載體基底。在所述方法的一些實施例中,所述邏輯裝置是用於所述第一記憶體裝置及所述第二記憶體裝置的介面裝置,所述方法更包括:將所述介面裝置及處理器裝置貼合至晶圓級重佈線結構;以及將所述晶圓級重佈線結構貼合至載體基底。在所述方法的一些實施例中,所述邏輯裝置是用
於所述第一記憶體裝置及所述第二記憶體裝置的介面裝置,所述方法更包括:形成第一重佈線結構;形成自所述第一重佈線結構延伸的導通孔;將橋接晶粒放置在所述導通孔附近;利用包封體包封所述橋接晶粒及所述導通孔;在所述包封體、所述橋接晶粒及所述導通孔上形成第二重佈線結構;將所述介面裝置及處理器裝置貼合至所述第一重佈線結構;以及將所述第二重佈線結構貼合至載體基底。
在實施例中,一種方法包括:在載體基底上方堆疊多個記憶體裝置;移除所述載體基底,以露出位於所述記憶體裝置的上部記憶體裝置的前側處的介電層的主表面;在所述移除之後,形成穿過所述介電層的導電凸塊,所述導電凸塊自所述介電層的所述主表面凸起;使用所述導電凸塊測試所述記憶體裝置中的每一者;以及在所述測試之後,利用可迴焊連接件將邏輯裝置貼合至所述導電凸塊。
在實施例中,一種結構包括:第一記憶體立方體,其包括多個第一記憶體裝置,所述多個第一記憶體裝置利用介電質對介電質接合鍵且利用金屬對金屬接合鍵背對面接合,所述第一記憶體立方體的頂部記憶體裝置包括位於所述頂部記憶體裝置的前側處的第一導電凸塊,所述第一記憶體立方體的每個相應的下部記憶體裝置包括位於所述相應的下部記憶體裝置的前側處的接合接墊;邏輯裝置,包括第二導電凸塊;第一可迴焊連接件,將所述第一導電凸塊物理及電性耦合至所述第二導電凸塊;以及第一
底部填充劑,位於所述邏輯裝置與所述第一記憶體立方體之間,所述第一底部填充劑圍繞所述第一可迴焊連接件中的每一者。
在一些實施例中,所述結構更包括:包封體,接觸所述第一底部填充劑及所述第一記憶體裝置中的每一者。在一些實施例中,所述結構更包括:介電層,圍繞所述第一記憶體裝置中的每一者;以及包封體,接觸所述第一底部填充劑及所述介電層。在所述結構的一些實施例中,所述第一記憶體立方體更包括位於所述第一記憶體立方體的中間層處的被動裝置。在所述結構的一些實施例中,所述邏輯裝置的寬度大於所述第一記憶體立方體的寬度。在所述結構的一些實施例中,所述邏輯裝置的寬度小於所述第一記憶體立方體的寬度。在所述結構的一些實施例中,所述邏輯裝置是封裝組件的一部分。在一些實施例中,所述結構更包括:第二記憶體立方體,包括多個第二記憶體裝置,所述多個第二記憶體裝置利用介電質對介電質接合鍵且利用金屬對金屬接合鍵背對面接合;第二可迴焊連接件,將所述第二記憶體立方體物理及電性耦合至所述第一記憶體立方體;以及第二底部填充劑,位於所述第一記憶體立方體與所述第二記憶體立方體之間,所述第二底部填充劑圍繞所述第二可迴焊連接件中的每一者。
以上概述了若干實施例的特徵,以使熟習此項技術者可更佳地理解本發明的各個態樣。熟習此項技術者應理解,其可容易地使用本發明作為設計或修改其他製程及結構的基礎來施行與本文中所介紹的實施例相同的目的及/或達成與本文中所介紹的實
施例相同的優點。熟習此項技術者亦應認識到,此類等效構造並不背離本發明的精神及範圍,而且他們可在不背離本發明的精神及範圍的條件下對其作出各種改變、代替、及變更。
10L:邏輯裝置
12L:半導體基底
14L:內連結構
16L:導通孔
22A、22L:晶粒連接件
24L:介電層
50:記憶體立方體
100:HBM裝置
102:晶圓
102A:裝置區
104:介電層
106:晶粒連接件
108:可迴焊連接件
110:底部填充劑
Claims (10)
- 一種積體電路封裝的形成方法,包括:利用介電質對介電質接合鍵以及利用金屬對金屬接合鍵將第一記憶體裝置的背側接合至第二記憶體裝置的前側;在所述接合之後,在所述第一記憶體裝置的前側處形成穿過第一介電層的第一導電凸塊,所述第一導電凸塊自所述第一介電層的主表面凸起;使用所述第一導電凸塊測試所述第一記憶體裝置及所述第二記憶體裝置;以及在所述測試之後,利用可迴焊連接件將邏輯裝置貼合至所述第一導電凸塊。
- 如請求項1所述的積體電路封裝的形成方法,其中將所述第一記憶體裝置的所述背側接合至所述第二記憶體裝置的所述前側包括利用介電質對介電質接合鍵以及利用金屬對金屬接合鍵將第一晶圓的背側接合至第二晶圓的前側,所述第一晶圓包括所述第一記憶體裝置,所述第二晶圓包括所述第二記憶體裝置,所述方法更包括:在所述接合之後,將所述第一記憶體裝置及所述第二記憶體裝置單體化。
- 如請求項1所述的積體電路封裝的形成方法,其中將所述第一記憶體裝置的所述背側接合至所述第二記憶體裝置的所述前側包括利用介電質對介電質接合鍵以及利用金屬對金屬接合 鍵將第一積體電路晶粒的背側接合至第二積體電路晶粒的前側,所述方法更包括:在所述接合之後,在所述第一積體電路晶粒及所述第二積體電路晶粒周圍形成第二介電層。
- 如請求項1所述的積體電路封裝的形成方法,更包括:利用介電質對介電質接合鍵以及利用金屬對金屬接合鍵將被動裝置的前側接合至所述第二記憶體裝置的背側;在所述被動裝置周圍形成第二介電層;形成延伸穿過所述第二介電層的導通孔;以及利用金屬對金屬接合鍵將第三記憶體裝置的前側接合至所述導通孔及所述被動裝置的背側,並利用介電質對介電質接合鍵將所述第三記憶體裝置的所述前側接合至所述第二介電層及所述被動裝置的所述背側。
- 如請求項1所述的積體電路封裝的形成方法,其中利用所述可迴焊連接件將所述邏輯裝置貼合至所述第一導電凸塊包括:獲得包括所述邏輯裝置及第二導電凸塊的晶圓,所述第二導電凸塊設置於所述晶圓的背側處;以及利用所述可迴焊連接件將所述第一導電凸塊焊接至所述第二導電凸塊,或者 ,其中利用所述可迴焊連接件將所述邏輯裝置貼合至所述第一導電凸塊包括:形成包括所述邏輯裝置、包封體及第二導電凸塊的封裝組件,所述包封體圍繞所述邏輯裝置,所述第二導電凸塊連接至所述邏輯裝置;以及利用所述可迴焊連接件將所述第一導電凸塊焊接至所述第二導電凸塊,或者,其中利用所述可迴焊連接件將所述邏輯裝置貼合至所述第一導電凸塊包括:獲得積體電路晶粒,所述積體電路晶粒包括位於所述積體電路晶粒的背側的第二導電凸塊;以及利用所述可迴焊連接件將所述第一導電凸塊焊接至所述第二導電凸塊。
- 如請求項1所述的積體電路封裝的形成方法,其中所述邏輯裝置是用於所述第一記憶體裝置及所述第二記憶體裝置的介面裝置,所述方法更包括:將所述介面裝置及處理器裝置貼合至中介層;以及將所述中介層貼合至載體基底,或者其中所述邏輯裝置是用於所述第一記憶體裝置及所述第二記憶體裝置的介面裝置,所述方法更包括:將所述介面裝置及處理器裝置貼合至晶圓級重佈線結構;以及 將所述晶圓級重佈線結構貼合至載體基底,或者其中所述邏輯裝置是用於所述第一記憶體裝置及所述第二記憶體裝置的介面裝置,所述方法更包括:形成第一重佈線結構;形成自所述第一重佈線結構延伸的導通孔;將橋接晶粒放置在所述導通孔附近;利用包封體包封所述橋接晶粒及所述導通孔;在所述包封體、所述橋接晶粒及所述導通孔上形成第二重佈線結構;將所述介面裝置及處理器裝置貼合至所述第一重佈線結構;以及將所述第二重佈線結構貼合至載體基底。
- 一種積體電路封裝的形成方法,包括:在載體基底上方堆疊多個記憶體裝置;移除所述載體基底,以露出位於所述記憶體裝置的上部記憶體裝置的前側處的介電層的主表面;在所述移除之後,形成穿過所述介電層的導電凸塊,所述導電凸塊自所述介電層的所述主表面凸起;使用所述導電凸塊測試所述記憶體裝置中的每一者;以及在所述測試之後,利用可迴焊連接件將邏輯裝置貼合至所述導電凸塊。
- 一種積體電路封裝,包括: 第一記憶體立方體,包括多個第一記憶體裝置,所述多個第一記憶體裝置利用介電質對介電質接合鍵以及利用金屬對金屬接合鍵背對面接合,所述第一記憶體立方體的頂部記憶體裝置包括位於所述頂部記憶體裝置的前側處的第一導電凸塊,所述第一記憶體立方體的每個相應的下部記憶體裝置包括位於所述相應的下部記憶體裝置的前側處的接合接墊;邏輯裝置,包括第二導電凸塊;第一可迴焊連接件,將所述第一導電凸塊物理及電性耦合至所述第二導電凸塊;以及第一底部填充劑,位於所述邏輯裝置與所述第一記憶體立方體之間,所述第一底部填充劑圍繞所述第一可迴焊連接件中的每一者,其中所述第一導電凸塊包括與所述第一底部填充劑接觸的第一部分及不與所述第一底部填充劑接觸的第二部分,且所述第二導電凸塊包括與所述第一底部填充劑接觸的第一部分及不與所述第一底部填充劑接觸的第二部分。
- 如請求項8所述的積體電路封裝的形成,更包括:包封體,圍繞所述第一底部填充劑及所述第一記憶體裝置中的每一者。
- 如請求項8所述的積體電路封裝的形成,其中所述第一記憶體立方體更包括位於所述第一記憶體立方體的中間層處的被動裝置。
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