TWI790545B - 具有干涉儀的帶電粒子束裝置及其操作方法 - Google Patents

具有干涉儀的帶電粒子束裝置及其操作方法 Download PDF

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Publication number
TWI790545B
TWI790545B TW110104870A TW110104870A TWI790545B TW I790545 B TWI790545 B TW I790545B TW 110104870 A TW110104870 A TW 110104870A TW 110104870 A TW110104870 A TW 110104870A TW I790545 B TWI790545 B TW I790545B
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TW
Taiwan
Prior art keywords
charged particle
objective lens
particle beam
lens assembly
assembly
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TW110104870A
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English (en)
Chinese (zh)
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TW202145283A (zh
Inventor
約翰 布雷爾
羅尼 洛伊芬尼
亞利桑德 高登史坦
Original Assignee
德商Ｉｃｔ積體電路測試股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20292—Means for position and/or orientation registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H01J2237/216—Automatic focusing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW110104870A 2020-02-18 2021-02-09 具有干涉儀的帶電粒子束裝置及其操作方法 TWI790545B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/793,314 2020-02-18
US16/793,314 US11257657B2 (en) 2020-02-18 2020-02-18 Charged particle beam device with interferometer for height measurement

Publications (2)

Publication Number Publication Date
TW202145283A TW202145283A (zh) 2021-12-01
TWI790545B true TWI790545B (zh) 2023-01-21

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TW110104870A TWI790545B (zh) 2020-02-18 2021-02-09 具有干涉儀的帶電粒子束裝置及其操作方法

Country Status (5)

Country Link
US (1) US11257657B2 (https=)
JP (1) JP7171795B2 (https=)
KR (1) KR102493825B1 (https=)
CN (1) CN113340927B (https=)
TW (1) TWI790545B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115083869B (zh) * 2022-06-06 2025-09-26 惠然科技有限公司 机械对中装置及电子显微镜
JP2025132046A (ja) * 2024-02-29 2025-09-10 リオン株式会社 粒子計測装置及び粒子計測方法
WO2026062889A1 (ja) * 2024-09-20 2026-03-26 株式会社日立ハイテク 光学装置及び荷電粒子線装置

Citations (7)

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US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
US20030053074A1 (en) * 2001-08-28 2003-03-20 Hill Henry A. Interferometric stage system
US20070252963A1 (en) * 2004-12-22 2007-11-01 Asml Netherlands B.V. Lithographic Apparatus, Method of Exposing a Substrate, Method of Measurement, Device Manufacturing Method, and Device Manufacturing Thereby
TW200743778A (en) * 2006-05-16 2007-12-01 Vistec Semicondcutor Systems Gmbh A method for enhancing the measuring accuracy when determining the coordinates of structures on a substrate
US20110226949A1 (en) * 2010-03-18 2011-09-22 Carl Zeiss NTSGmbH Inspection System
US20150219686A1 (en) * 2012-08-31 2015-08-06 Infinitesima Limited Multiple probe detection and actuation
TW201820376A (zh) * 2016-10-27 2018-06-01 漢民微測科技股份有限公司 用於判定及校準載台位置的系統及方法

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US6765217B1 (en) * 1998-04-28 2004-07-20 Nikon Corporation Charged-particle-beam mapping projection-optical systems and methods for adjusting same
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
JP3969640B2 (ja) * 2002-04-10 2007-09-05 日本電信電話株式会社 荷電粒子ビーム描画装置およびそれを用いた描画方法
US20050134865A1 (en) * 2003-12-17 2005-06-23 Asml Netherlands B.V. Method for determining a map, device manufacturing method, and lithographic apparatus
US10991545B2 (en) * 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US8970820B2 (en) * 2009-05-20 2015-03-03 Nikon Corporation Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method
JP2012015227A (ja) * 2010-06-30 2012-01-19 Jeol Ltd 電子線装置の位置決め方法及び装置
US8766213B2 (en) * 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
EP2755021B1 (en) * 2013-01-15 2016-06-22 Carl Zeiss Microscopy Ltd. Method of analyzing a sample and charged particle beam device for analyzing a sample
US9366524B2 (en) * 2013-10-08 2016-06-14 Kla-Tencor Corporation Alignment sensor and height sensor
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US5055696A (en) * 1988-08-29 1991-10-08 Hitachi, Ltd. Multilayered device micro etching method and system
US20030053074A1 (en) * 2001-08-28 2003-03-20 Hill Henry A. Interferometric stage system
US20070252963A1 (en) * 2004-12-22 2007-11-01 Asml Netherlands B.V. Lithographic Apparatus, Method of Exposing a Substrate, Method of Measurement, Device Manufacturing Method, and Device Manufacturing Thereby
TW200743778A (en) * 2006-05-16 2007-12-01 Vistec Semicondcutor Systems Gmbh A method for enhancing the measuring accuracy when determining the coordinates of structures on a substrate
US20110226949A1 (en) * 2010-03-18 2011-09-22 Carl Zeiss NTSGmbH Inspection System
US20150219686A1 (en) * 2012-08-31 2015-08-06 Infinitesima Limited Multiple probe detection and actuation
TW201820376A (zh) * 2016-10-27 2018-06-01 漢民微測科技股份有限公司 用於判定及校準載台位置的系統及方法

Also Published As

Publication number Publication date
CN113340927B (zh) 2023-01-20
KR20210105839A (ko) 2021-08-27
US11257657B2 (en) 2022-02-22
CN113340927A (zh) 2021-09-03
KR102493825B1 (ko) 2023-02-06
US20210257182A1 (en) 2021-08-19
JP7171795B2 (ja) 2022-11-15
TW202145283A (zh) 2021-12-01
JP2021132030A (ja) 2021-09-09

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