TWI787644B - 具有獨立調諧的臨界電壓的場效電晶體 - Google Patents
具有獨立調諧的臨界電壓的場效電晶體 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 58
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 13
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 13
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Abstract
本發明揭示場效電晶體的結構以及形成場效電晶體的結構的方法。半導體層包括第一通道區及第二通道區,第一場效電晶體具有位於該第一通道區上方的第一閘極介電層,且第二場效電晶體具有位於該第二通道區上方的第二閘極介電層。該第一及第二通道區分別由本徵半導體材料的未摻雜部分組成,該第一閘極介電層包含第一原子濃度的功函數金屬,且該第二閘極介電層包含大於該第一閘極介電層中的該功函數金屬的該第一原子濃度的第二原子濃度的該功函數金屬。
Description
本發明關於半導體裝置製造及積體電路,尤其關於場效電晶體的結構以及形成場效電晶體的結構的方法。
可使用互補金屬氧化物半導體(complementary-metal-oxide-semiconductor;CMOS)製程來建立p型與n型場效電晶體的組合,將該p型與n型場效電晶體用作裝置,以構建例如邏輯單元(cell)。場效電晶體通常包括源極,汲極,在該源極與汲極之間提供通道區的本體,以及與該通道區疊置的閘極電極。當向該閘極電極施加超過特徵臨界(threshold)電壓的控制電壓時,在該源極與汲極之間的該通道區中發生載子流(carrier flow),從而產生裝置輸出電流。
每種導電類型的場效電晶體可在同一晶片上形成有多個不同的臨界電壓。調節該些場效電晶體的臨界電壓可包括調節用以構建閘極電極的功函數金屬,以及調節通道區的摻雜。p型場效電晶體的通道區可包括n型摻雜,且n型場效電晶體的通道區可包括p型摻雜,作為臨界電壓設置方案的部分。然而,利用通道摻雜調節臨界電壓可能降低通道遷移率並降低性能。此外,改變功函數金屬的其中一種可能影響兩種導電類型的場效電晶體的臨界電壓,從而降
低臨界電壓調諧的自由度並增加電路設計的複雜性。此外,在相鄰臨界電壓之間可實現的間隔可能小於用以提供不同臨界電壓的最佳值。
需要改進的場效電晶體的結構以及形成場效電晶體的結構的方法。
在本發明的一個實施例中,一種結構包括:半導體層,具有第一通道區及第二通道區;第一場效電晶體,具有位於該第一通道區上方的第一閘極介電層;以及第二場效電晶體,具有位於該第二通道區上方的第二閘極介電層。該第一通道區及該第二通道區分別由本徵(intrinsic)半導體材料的未摻雜部分(undoped section)組成,該第一閘極介電層包含第一原子濃度的功函數金屬,且該第二閘極介電層包含大於該第一閘極介電層中的該功函數金屬的該第一原子濃度的第二原子濃度的該功函數金屬。
在本發明的一個實施例中,一種結構包括:半導體層,具有第一通道區及第二通道區;第一場效電晶體,具有位於該第一通道區上方的第一閘極介電層;以及第二場效電晶體,具有位於該第二通道區上方的第二閘極介電層。該第一通道區及該第二通道區分別由本徵半導體材料的未摻雜部分組成,該第一閘極介電層包含第一原子濃度的第一功函數金屬,且該第二閘極介電層包含一原子濃度的第二功函數金屬,該第二功函數金屬在組成上不同於該第一功函數金屬。
在本發明的一個實施例中,一種方法包括:在半導體層中的第一通道區及第二通道區上方沉積閘極介電層,在該第一通道區及該第二通道區
上方的該閘極介電層上沉積功函數金屬的第一層,以及自該半導體層的該第一通道區上方的該閘極介電層移除該功函數金屬的該第一層。在自該半導體層的該第一通道區上方的該閘極介電層移除該功函數金屬的該第一層以後,在該第一通道區上方的該閘極介電層上及該第二通道區上方的該功函數金屬的該第一層上沉積該功函數金屬的第二層。該方法進一步包括通過退火製程將該功函數金屬的原子從該功函數金屬的該第一層擴散至該第一通道區上方的該閘極介電層中以及從該功函數金屬的該第一層及該第二層擴散至該第二通道區上方的該閘極介電層中。
10,12,14,16:層
18,20,22,24:區域
25:埋置絕緣體層
26:半導體層
27:基板
28:隔離區
30,32,34,36,38,40:層
44:阻擋層
46:層
50,52,54,56:場效電晶體
62:側間隙壁
64:源/汲區
66:通道區
包含於並構成本說明書的一部分的附圖示例說明本發明的各種實施例,並與上面所作的有關本發明的概括說明以及下面所作的有關該些實施例的詳細說明一起用以解釋本發明的該些實施例。在該些附圖中,類似的附圖標記表示不同視圖中的類似特徵。
圖1至圖10是依據本發明的實施例處於製造方法的連續階段的場效電晶體的結構的剖視圖。
請參照圖1並依據本發明的實施例,在半導體層26的不同區域18、20、22、24上方形成異質多層堆疊的層10、12、14、16。在一個實施例中,半導體層26可為絕緣體上半導體(semiconductor-on-insulator;SOI)晶圓的裝置層,該絕緣體上半導體晶圓進一步包括埋置絕緣體層25及基板27。半導
體層26通過中間的埋置絕緣體層25與基板27隔開,且半導體層26可遠薄於基板27。區域18、20、22、24可通過由介電材料例如二氧化矽組成的隔離區28電性隔離,該隔離區穿過半導體層26延伸至埋置絕緣體層25。
半導體層26及基板27可由單晶半導體材料例如單晶矽組成,且埋置絕緣體層25可由埋置氧化物(buried oxide;BOX)層構成。半導體層26可由本徵半導體材料(例如,本徵矽)組成,該本徵半導體材料為未摻雜且不呈現n型導電性或p型導電性。在一個實施例中,半導體層26可具有在從約3奈米(nm)至約200奈米的範圍內變化的厚度。在一個實施例中,該SOI晶圓可為具有薄半導體層26及薄埋置絕緣體層25的極薄絕緣體上半導體(extremely thin semiconductor-on-insulator;ETSOI)晶圓,且該ETSOI晶圓可用以製造全耗盡SOI(fully-depleted SOI;FDSOI)裝置。在一個實施例中,該ETSOI晶圓的半導體層26可具有適於製造FDSOI裝置的超薄模式的厚度(也就是,約3奈米至約10奈米)。
層10可由介電材料例如高k介電材料如氧化鉿組成,其適合用作電晶體中的閘極介電質。層10的厚度可在從二(2)奈米(nm)至四(4)奈米的範圍內變化。層12、14、16可由金屬組成。例如,層12、16可由相同的金屬例如氮化鈦組成,且層14可由與層12、16不同的金屬組成。在一個實施例中,層14可包含p型功函數金屬。在一個實施例中,層14中所包含的該p型功函數金屬可為鋁。在實施例中,層14的厚度可在0.1埃(Å)至5.0Å的範圍內。層10、12、14、16在半導體層26上方通過例如原子層沉積順序沉積,層10位於層12、14、16與半導體層26之間的半導體層26上,且層14沿垂直方向位於層12與層16之間。
請參照圖2,其中,類似的附圖標記表示圖1中類似的特徵,且在下一製造階段,利用光刻及蝕刻製程自半導體層26的區域22移除層12、14、16。為此,可通過光刻形成蝕刻遮罩,其覆蓋區域18、20、24,並在區域22上方開放。該蝕刻遮罩可包括例如有機光阻層,其通過旋塗製程施加、經預烘烤、暴露於通過光遮罩投射的光、曝光後烘烤,以及用化學顯影劑顯影。在形成該蝕刻遮罩以後,利用一個或多個蝕刻製程圖案化層16,以定義覆蓋區域18、20、22中的層12、14並在區域22中的層12、14上方開放的硬遮罩。在該一個或多個蝕刻製程之後剝離該蝕刻遮罩。在形成該硬遮罩以後,通過一個或多個蝕刻製程自區域22移除層12、14,從而暴露區域22中的層10。
請參照圖3,其中,類似的附圖標記表示圖2中類似的特徵,且在下一製造階段,利用蝕刻製程自區域18、20、24移除層16,接著在所有區域18、20、22、24上方形成層30、32。層30、32可由金屬組成。例如,層32可由氮化鈦組成,且層30可由與層32不同的金屬組成。在一個實施例中,層30可包含p型功函數金屬。在一個實施例中,層30中所包含的該p型功函數金屬可為鋁。層30可由與層14相同的p型功函數金屬(例如,鋁)組成。在實施例中,層30的厚度可在0.1Å至5.0Å的範圍內。在一個實施例中,層30的厚度可小於層14的厚度。在一個實施例中,層30的厚度可大於層14的厚度。在一個實施例中,層30的厚度可等於層14的厚度。層30、32在半導體層26上方通過例如原子層沉積順序沉積,層32形成於層30上方。層30直接位於區域22中的層10上,且層30直接位於區域18、20、24中的層14上。
請參照圖4,其中,類似的附圖標記表示圖3中類似的特徵,且在下一製造階段,利用光刻及蝕刻製程自半導體層26的區域18、20移除層12、
14、30、32。為此,可通過光刻形成蝕刻遮罩,其覆蓋區域22、24並在區域18、20上方開放。該蝕刻遮罩可包括例如有機光阻層,其通過旋塗製程施加、經預烘烤、暴露於通過光遮罩投射的光、曝光後烘烤,以及用化學顯影劑顯影。在形成該蝕刻遮罩以後,利用一個或多個蝕刻製程圖案化層32,以定義覆蓋區域22中的層30、32及區域24中的層12、14、30、32並在區域28、20中的層12、14、30、32上方開放的硬遮罩。在該一個或多個蝕刻製程之後可剝離該蝕刻遮罩。在形成該硬遮罩以後,通過一個或多個蝕刻製程自區域18、20移除層12、14、30、32,從而暴露區域18、20中的層10。
請參照圖5,其中,類似的附圖標記表示圖4中類似的特徵,且在下一製造階段,在所有區域18、20、22、24上方形成層34、36。層34、36可由金屬組成。例如,層36可由氮化鈦組成,且層34可由與層36不同的金屬組成。在一個實施例中,層36可包含n型功函數金屬。在一個實施例中,層34中所包含的該n型功函數金屬可為鑭。在實施例中,層34的厚度可在0.1Å至5.0Å的範圍內。層34、36在半導體層26上方通過例如原子層沉積順序沉積,層36形成於層34上方。層34直接位於區域18、20中的層10上,且層34直接位於區域22、24中的層32上。
請參照圖6,其中,類似的附圖標記表示圖5中類似的特徵,且在下一製造階段,利用光刻及蝕刻製程自半導體層26的區域20移除層34、36。為此,可通過光刻形成蝕刻遮罩,其覆蓋區域18、22、24並在區域20上方開放。該蝕刻遮罩可包括例如有機光阻層,其通過旋塗製程施加、經預烘烤、暴露於通過光遮罩投射的光、曝光後烘烤,以及用化學顯影劑顯影。在形成該蝕刻遮罩以後,利用一個或多個蝕刻製程圖案化層36,以定義硬遮罩,其覆蓋區域18
中的層34,區域22中的層30、32、34,以及區域24中的層12、14、30、32、34,並在區域20中的層34上方開放。在該一個或多個蝕刻製程之後可剝離該蝕刻遮罩。在形成該硬遮罩以後,通過一個或多個蝕刻製程自區域20移除層34,從而暴露區域20中的層10。
請參照圖7,其中,類似的附圖標記表示圖6中類似的特徵,且在下一製造階段,利用蝕刻製程自區域18、22、24移除層36,接著在所有區域18、20、22、24上方形成層38、40。層38、40可由金屬組成。例如,層40可由氮化鈦組成,且層38可由與層40不同的金屬組成。在一個實施例中,層38可包含n型功函數金屬。在一個實施例中,層38中所包含的該n型功函數金屬可為鑭。層38可由與層34相同的n型功函數金屬(例如,鑭)組成。在實施例中,層38的厚度可在0.1Å至5.0Å的範圍內。在一個實施例中,層38的厚度可小於層34的厚度。在一個實施例中,層38的厚度可大於層34的厚度。在一個實施例中,層38的厚度可等於層34的厚度。層38、40在半導體層26上方通過例如原子層沉積順序沉積,層40形成於層38上方。層38直接位於區域20中的層10上,層38直接位於區域18中的層34上,且層38直接位於區域22、24中的層34上。
請參照圖8,其中,類似的附圖標記表示圖7中類似的特徵,且在下一製造階段,執行退火製程,以驅動層34、38的材料(例如,鑭)的原子進入區域18中的層10的部分中,驅動層34的材料(例如,鑭)的原子進入區域20中的層10的部分中,驅動層30的材料(例如,鋁)的原子進入區域22中的層10的部分中,以及驅動層14、30的材料(例如,鋁)的原子進入區域24中的層10的部分中。該退火製程可為利用給定的退火條件執行的快速熱退火製程,且層40
充當覆蓋(cap)層。在實施例中,該快速熱退火製程可在900℃至1100℃的基板溫度下執行,持續一(1)秒至十(10)秒。
層10的組成通過轉移的摻雜物原子在區域18、20中被局部摻雜。區域18中的層10的部分摻雜有通過擴散自層34、38轉移的摻雜物原子,且區域20中的層10的部分摻雜有通過擴散自層34轉移的摻雜物原子。在區域18中的層10的部分中的摻雜物原子的原子濃度大於在區域20中的層10的部分中的摻雜物原子的原子濃度,因為層34、38的總厚度大於單獨的層38的厚度。在實施例中,在符合區域18中的層10的部分與區域20中的層10的部分相比具有較高原子濃度的情況下,在氧化鉿中的鑭摻雜物原子的原子濃度可分別在從約0.1原子百分比(at.%)至約7.5原子百分比的範圍內變化。原子濃度的範圍將依據層34、38的組成以及層10的組成而變化。在一個替代實施例中,可從流程省略層34的沉積,以使區域20中的層中的摻雜物原子的原子濃度為零。
層10的組成通過轉移的摻雜物原子在區域22、24中被局部摻雜。區域22中的層10的部分摻雜有通過擴散自層14、30轉移的摻雜物原子,且區域24中的層10的部分摻雜有通過擴散自層30轉移的摻雜物原子。在區域24中的層10的部分中的摻雜物原子的原子濃度大於在區域22中的層10的部分中的摻雜物原子的原子濃度,因為層14、30的總厚度大於單獨的層30的厚度。在實施例中,在符合區域24中的層10的部分與區域22中的層10的部分相比具有較高原子濃度的情況下,在氧化鉿中的鋁摻雜物原子的原子濃度可分別在從約0.2原子百分比(at.%)至約15.5原子百分比的範圍內變化。原子濃度的範圍將依據層14、30的組成及層10的組成而變化。在一個替代實施例,可從流程省略層14的
沉積,以使區域22中的層中的摻雜物原子的原子濃度為零。層32阻擋摻雜物原子從層34、38擴散至區域22、24中的層10。
例如並參照表格,層10可由具有2奈米(nm)的層厚度的氧化鉿(HfO2)組成,n型功函數金屬可為鑭(La),p型功函數金屬可為鋁(Al),且原子濃度可表示為原子百分比(at.%)。表格中顯示擴散至2奈米厚的氧化鉿層中的以埃(Å)為單位的不同層厚所導致的鑭的原子百分比。表格中顯示擴散至2奈米厚的氧化鉿層中的以埃(Å)為單位的不同層厚所導致的鋁的原子百分比。具體例如,區域22中的層10的部分可具有1.79原子百分比的原子濃度,其由來自具有0.5Å的厚度的層30的鋁摻雜所導致,且區域24中的層10的部分可具有6.76原子百分比的原子濃度,其由來自具有2.0Å的總厚度的層14、30的鋁摻雜所導致。
請參照圖9,其中,類似的附圖標記表示圖8中類似的特徵,且在下一製造階段,在退火製程之後自層10移除覆蓋層12、32、40。在層10上方形成阻擋層44及層46。阻擋層44可由金屬例如氮化鈦組成,且層46可由例
如非晶矽或鎢組成。所述層移除及層44、46的沉積恢復多個不同區域18、20、22、24的平坦性。阻擋層44在各區域18、20、22、24上方可具有相同的厚度。
請參照圖10,其中,類似的附圖標記表示圖9中類似的特徵,且在下一製造階段,在半導體層26的不同區域18、20、22、24中形成場效電晶體50、52、54、56。層10、44、46可經圖案化以在各區域18、20、22、24中提供堆疊部分。層10的部分、阻擋層44的部分,以及層46的部分在區域18、20、22、24中可分別具有相同的厚度。基板27可包括一個或多個阱(未顯示),其可經偏置以為場效電晶體50、52、54、56提供相應背閘極。層46在各場效電晶體50、52、54、56中可提供最終導體層。在一個替代實施例中,作為替代金屬閘極製程的部分,可移除並替代層46的部分。
鄰近層10、44、46的堆疊部分的側表面或側壁設置側間隙壁62。可通過在覆蓋層46的部分上方沉積由介電材料例如氮化矽組成的共形層,並通過非等向性(anisotropic)蝕刻製程例如反應離子蝕刻蝕刻所沉積的共形層來形成側間隙壁62。
鄰近層10、44、46的堆疊部分的相對間隙壁包覆側壁設置源/汲(source/drain)區64。如本文中所使用,術語“源/汲區”是指半導體材料的摻雜區,其可充當場效電晶體的源極或汲極。源/汲區64可通過外延生長半導體層的部分提供,其在外延生長期間原位摻雜。在一個實施例中,源/汲區64可用提供p型導電性的p型摻雜物(例如硼)在外延生長期間原位摻雜,且源/汲區64可由矽-鍺組成。在一個替代實施例中,源/汲區64可用提供n型導電性的n型摻雜物(例如,磷及/或砷)在外延生長期間原位摻雜,且源/汲區64可由矽組成。
在一個實施例中,場效電晶體50、52、54、56都可為具有p型源/汲區64的p型電晶體。在一個實施例中,場效電晶體50、52、54、56都可為具有n型源/汲區64的n型電晶體。在一個實施例中,場效電晶體50、52、54、56都可為具有p型源/汲區64的p型平面電晶體。在一個實施例中,場效電晶體50、52、54、56都可為具有n型源/汲區64的n型平面電晶體。場效電晶體50、52、54、56的臨界電壓都可不同,且可通過提供增量來隔開,該增量提供臨界電壓的遞進,以提供例如具有任一種導電類型的超低電壓、低電壓、常規電壓、以及高電壓的電晶體,作為可用以形成晶片上的一個或多個積體電路的類型。可在不需要在阻擋層44上方沉積n型及p型功函數金屬層的情況下實現臨界電壓的調諧。
在層10、44、46的各不同堆疊部分下方的半導體層26中存在通道區66。通道區66表示源自半導體層26的本徵半導體材料的相應未摻雜部分。由於添加至不同區域18、20、22、24中的層10的摻雜物,不需要通道摻雜來調節場效電晶體50、52、54、56的臨界電壓,因此,通道區66可為未摻雜且不具有摻雜物。消除通道摻雜可提高通道遷移率並由此增強電晶體性能,且消除通道摻雜也可提高可靠性。
此外,場效電晶體50、52、54、56的臨界電壓可通過不同區域18、20、22、24中的層10的摻雜來單獨調節及調諧。任一種導電類型的場效電晶體50、52、54、56的臨界電壓可通過層10中的摻雜物的濃度調諧,該摻雜物的濃度可通過選擇層14、30的厚度及層34、38的厚度來選擇。因此,場效電晶體50、52、54、56的臨界電壓可通過層10的摻雜來獨立選擇。通過層10的摻雜
調諧臨界電壓的增加的自由度可提供調整在不同臨界電壓之間可實現的間隔(以毫伏為單位)的能力,以最優化不同臨界電壓的值。
上述方法用於積體電路晶片的製造。製造者可以原始晶圓形式(例如,作為具有多個未封裝晶片的單個晶圓)、作為裸晶片或者以封裝形式分配所得積體電路晶片。在後一種情況中,該晶片設于單晶片封裝件中(例如塑料承載件,其具有附著至母板或其它更高層次承載件的引腳)或者多晶片封裝件中(例如陶瓷承載件,其具有單面或雙面互連或嵌埋互連)。在任何情況下,接著將該晶片與其它晶片、分立電路元件和/或其它信號處理裝置整合,作為中間產品或最終產品的部分。
本文中引用術語例如“垂直”、“水平”等作為示例來建立參考框架,並非限制。本文中所使用的術語“水平”被定義為與半導體基板的傳統平面平行的平面,而不論其實際的三維空間取向。術語“垂直”及“正交”是指垂直於如剛剛所定義的水平面的方向。術語“橫向”是指在該水平平面內的方向。
本文中引用的由近似語言例如“大約”、“大致”及“基本上”所修飾的術語不限於所指定的精確值。該近似語言可對應於用以測量該值的儀器的精度,且除非另外依賴於該儀器的精度,否則可表示所述值的+/-10%。
與另一個特徵“連接”或“耦接”的特徵可與該另一個特徵直接連接或耦接,或者可存在一個或多個中間特徵。如果不存在中間特徵,則特徵可與另一個特徵“直接連接”或“直接耦接”。如存在至少一個中間特徵,則特徵可與另一個特徵“非直接連接”或“非直接耦接”。在另一個特徵“上”或與其“接觸”的特徵可直接在該另一個特徵上或與其直接接觸,或者可存在一個或多個中間特徵。如果
不存在中間特徵,則特徵可直接在另一個特徵“上”或與其“直接接觸”。如存在至少一個中間特徵,則特徵可“不直接”在另一個特徵“上”或與其“不直接接觸”。
對本發明的各種實施例所作的說明是出於示例說明的目的,而非意圖詳盡無遺或限於所揭示的實施例。許多修改及變更對於本領域的普通技術人員將顯而易見,而不背離所述實施例的範圍及精神。本文中所使用的術語經選擇以最佳解釋實施例的原理、實際應用或在市場已知技術上的技術改進,或者使本領域的普通技術人員能夠理解本文中所揭示的實施例。
10:層
18,20,22,24:區域
25:埋置絕緣體層
26:半導體層
27:基板
28:隔離區
44:阻擋層
46:層
50,52,54,56:場效電晶體
62:側間隙壁
64:源/汲區
66:通道區
Claims (12)
- 一種半導體結構,包括:半導體層,包括分別由本徵半導體材料的未摻雜部分組成的第一通道區及第二通道區;第一場效電晶體,包括位於該第一通道區上方的第一閘極介電層,該第一閘極介電層包含氧化鉿及作為在該氧化鉿中的摻雜物原子的第一原子濃度的功函數金屬;以及第二場效電晶體,包括位於該第二通道區上方的第二閘極介電層,該第二閘極介電層包含氧化鉿及作為在該氧化鉿中的摻雜物原子的第二原子濃度的該功函數金屬,其中,該功函數金屬為鋁,該第一原子濃度及該第二原子濃度分別在約0.2原子百分比至約15.5原子百分比的範圍內,且該第二原子濃度大於該第一原子濃度。
- 如請求項1所述的半導體結構,其中,該第一場效電晶體具有與該功函數金屬的該第一原子濃度相關的第一臨界電壓,該第二場效電晶體具有與該功函數金屬的該第二原子濃度相關的第二臨界電壓,且該第二臨界電壓不同於該第一臨界電壓。
- 如請求項1所述的半導體結構,進一步包括:第一阻擋層,位於該第一閘極介電層上方;以及第二阻擋層,位於該第二閘極介電層上方,其中,該第一阻擋層與該第二阻擋層包含氮化鈦。
- 如請求項3所述的半導體結構,其中,該第一阻擋層與該第二阻擋層具有相同的厚度。
- 一種半導體結構,包括:半導體層,包括分別由本徵半導體材料的未摻雜部分組成的第一通道區及第二通道區;第一場效電晶體,包括位於該第一通道區上方的第一閘極介電層,該第一閘極介電層包含氧化鉿及作為在該氧化鉿中的摻雜物原子的第一原子濃度的功函數金屬;以及第二場效電晶體,包括位於該第二通道區上方的第二閘極介電層,該第二閘極介電層包含氧化鉿及作為在該氧化鉿中的摻雜物原子的第二原子濃度的該功函數金屬,其中,該功函數金屬為鑭,該第一原子濃度及該第二原子濃度分別在約0.1原子百分比至約7.5原子百分比的範圍內,且該第二原子濃度大於該第一原子濃度。
- 如請求項5所述的半導體結構,進一步包括:第一阻擋層,位於該第一閘極介電層上方;以及第二阻擋層,位於該第二閘極介電層上方,其中,該第一阻擋層與該第二阻擋層包含氮化鈦。
- 如請求項5所述的半導體結構,其中,該第一場效電晶體具有與該功函數金屬的該第一原子濃度相關的第一臨界電壓,該第二場效電晶體具有與該功函數金屬的該第二原子濃度相關的第二臨界電壓,且該第二臨界電壓不同於該第一臨界電壓。
- 如請求項6所述的半導體結構,其中,該第一阻擋層與該第二阻擋層具有相同的厚度。
- 一種形成半導體結構之方法,該方法包括:在半導體層中的第一通道區及第二通道區上方沉積閘極介電層;在該第一通道區及該第二通道區上方的該閘極介電層上沉積第一功函數金屬的第一層;自該半導體層的該第一通道區上方的該閘極介電層移除該第一功函數金屬的該第一層;在自該半導體層的該第一通道區上方的該閘極介電層移除該第一功函數金屬的該第一層以後,在該第一通道區上方的該閘極介電層上及該第二通道區上方的該第一功函數金屬的該第一層上沉積該第一功函數金屬的第二層;以及通過退火製程將該第一功函數金屬的原子從該第一功函數金屬的該第一層擴散至該第一通道區上方的該閘極介電層中以及從該第一功函數金屬的該第一層及該第二層擴散至該第二通道區上方的該閘極介電層中。
- 如請求項9所述的方法,其中,該第一通道區及該第二通道區分別由本徵半導體材料的未摻雜部分組成。
- 如請求項9所述的方法,其中,該閘極介電層包括第三通道區及第四通道區,並且進一步包括:在該第三通道區及該第四通道區上方的該閘極介電層上沉積第二功函數金屬的第一層;自該半導體層的該第三通道區上方的該閘極介電層移除該第二功函數金屬的該第一層;以及 在自該半導體層的該第三通道區上方的該閘極介電層移除該第二功函數金屬的該第一層以後,在該第三通道區上方的該閘極介電層上及該第四通道區上方的該第二功函數金屬的該第一層上沉積該第二功函數金屬的第二層,其中,該第二功函數金屬在組成上不同於該第一功函數金屬,且該退火製程將該第二功函數金屬的原子從該第二功函數金屬的該第一層擴散至該第三通道區上方的該閘極介電層中以及從該第二功函數金屬的該第一層及該第二層擴散至該第四通道區上方的該閘極介電層中。
- 如請求項9所述的方法,進一步包括:同時沉積位於該第一通道區上方的該閘極介電層上的第一阻擋層以及位於該第二通道區上方的該閘極介電層上的第二阻擋層,其中,該第一阻擋層與該第二阻擋層具有相同的厚度。
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