TWI785032B - 基板處理裝置 - Google Patents

基板處理裝置 Download PDF

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Publication number
TWI785032B
TWI785032B TW107112688A TW107112688A TWI785032B TW I785032 B TWI785032 B TW I785032B TW 107112688 A TW107112688 A TW 107112688A TW 107112688 A TW107112688 A TW 107112688A TW I785032 B TWI785032 B TW I785032B
Authority
TW
Taiwan
Prior art keywords
substrate
aforementioned
mounting table
processing
gas
Prior art date
Application number
TW107112688A
Other languages
English (en)
Chinese (zh)
Other versions
TW201907474A (zh
Inventor
依田悠
田中誠治
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201907474A publication Critical patent/TW201907474A/zh
Application granted granted Critical
Publication of TWI785032B publication Critical patent/TWI785032B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Paper (AREA)
TW107112688A 2017-04-27 2018-04-13 基板處理裝置 TWI785032B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-088265 2017-04-27
JP2017088265A JP6861570B2 (ja) 2017-04-27 2017-04-27 基板処理装置

Publications (2)

Publication Number Publication Date
TW201907474A TW201907474A (zh) 2019-02-16
TWI785032B true TWI785032B (zh) 2022-12-01

Family

ID=64094140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107112688A TWI785032B (zh) 2017-04-27 2018-04-13 基板處理裝置

Country Status (4)

Country Link
JP (1) JP6861570B2 (ko)
KR (1) KR102061969B1 (ko)
CN (1) CN108807124B (ko)
TW (1) TWI785032B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102203962B1 (ko) * 2019-04-15 2021-01-18 (주)위지트 비증착 구간 발생이 없는 서셉터
CN110211860B (zh) * 2019-06-26 2021-07-13 南京中电熊猫液晶显示科技有限公司 一种干法刻蚀设备
KR20210065054A (ko) * 2019-11-25 2021-06-03 주식회사 원익아이피에스 가스 공급 블록 및 이를 포함하는 기판 처리 장치
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120077546A (ko) * 2010-12-30 2012-07-10 엘지디스플레이 주식회사 플라즈마 화학 기상 증착장비
KR20150078635A (ko) * 2013-12-31 2015-07-08 세메스 주식회사 기판 처리 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4979389B2 (ja) 2004-12-17 2012-07-18 東京エレクトロン株式会社 プラズマ処理装置
JP5256866B2 (ja) * 2008-02-05 2013-08-07 東京エレクトロン株式会社 処理装置
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
WO2014137905A2 (en) * 2013-03-06 2014-09-12 Plasma-Therm, Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP6349796B2 (ja) * 2014-03-11 2018-07-04 東京エレクトロン株式会社 プラズマ処理装置、薄膜トランジスターの製造方法及び記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120077546A (ko) * 2010-12-30 2012-07-10 엘지디스플레이 주식회사 플라즈마 화학 기상 증착장비
KR20150078635A (ko) * 2013-12-31 2015-07-08 세메스 주식회사 기판 처리 장치

Also Published As

Publication number Publication date
CN108807124A (zh) 2018-11-13
JP2018186221A (ja) 2018-11-22
JP6861570B2 (ja) 2021-04-21
TW201907474A (zh) 2019-02-16
CN108807124B (zh) 2021-01-26
KR102061969B1 (ko) 2020-01-02
KR20180120585A (ko) 2018-11-06

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