TWI785032B - Substrate processing equipment - Google Patents

Abstract

[Problem] To provide a substrate processing apparatus that can further obtain in-plane uniformity of processing and suppress particles from adhering to the substrate to be processed when the metal film of the substrate is processed by plasma etching. [Solution] A substrate processing device (1) for plasma etching a metal film of a substrate (G) with a halogen-containing gas has: an annular airflow guide member (40) disposed in a processing container (2) Inside, the inner peripheral part has "along the circumferential direction of the substrate mounting table (3), is arranged above the peripheral edge of the substrate mounting table (3), guides the processing gas introduced from the shower head (10) outward "The guide part (40-1), the outer peripheral part is installed on the inner wall of the processing container (2). The air flow guide member (40) has a slit (41) provided outside the substrate mounting table 3 along its circumferential direction.

Description

Substrate processing equipment

The present invention relates to a substrate processing device for performing plasma processing on a substrate to be processed.

In the manufacturing process of the flat panel display (FPD) represented by the liquid crystal display (LCD), there is a plasma etching process. The film is etched.

As such a substrate processing apparatus that "performs a plasma etching process on a substrate to be processed on which a predetermined film is formed on a glass substrate", there is known one in which a "lower electrode that functions as a lower electrode" is placed in a chamber that can be kept in vacuum. Function" of the substrate mounting table and the showerhead for gas introduction "facing the mounting table and functioning as the upper electrode", the lower electrode is connected to a high-frequency power supply that applies high-frequency power, and the chamber is evacuated. The processing gas is introduced into the chamber through the shower head, and high-frequency power is applied to the stage, and the predetermined film existing on the substrate to be processed is etched by the plasma of the processing gas formed thereby.

However, in such a substrate processing apparatus, although there is, for example, "etching such as an aluminum (Al) film or a Ti/Al/Ti layer by a halogen-containing gas such as chlorine (Cl ₂ ) gas as a processing gas, However, at this time, since the supply amount of the processing gas is proportional to the etching amount, the etching rate of the outer peripheral portion of the substrate is higher than that of the central portion due to the loading effect. A phenomenon in which the etching rate becomes more extreme. That is, if we look at the etching species (such as chlorine radicals) in the plasma, in the outermost peripheral region of the substrate, the substrate area that should be etched by a unit amount of etching species is about half of the central region. When the processing gas is supplied to the outermost peripheral region at the same flow rate as that supplied to the central region, the etching rate of the outermost peripheral region is about twice that of the central region according to calculation.

Therefore, the following technology has been proposed: a rectifying wall is provided around the periphery of the substrate on the mounting table, and by this, the flow of the processing gas from the vicinity of the outer peripheral region of the substrate to be processed toward the outer periphery of the substrate is blocked, thereby reducing The amount of etching species supplied to the outermost peripheral region of the substrate improves the uniformity of processing within the substrate surface (Patent Documents 1 and 2).

On the other hand, the following technology is also proposed: an airflow guide member is provided above the peripheral portion of the mounting table (the airflow guiding member is arranged along the circumferential direction of the mounting table, and between the peripheral portion and the directing the airflow outward), by controlling the airflow, the load effect is suppressed, and the processing uniformity in the substrate surface is improved (Patent Document 3).

[Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Unexamined Patent Publication No. 2003-243364

[Patent Document 2] Japanese Patent Laid-Open No. 2000-315676

[Patent Document 3] Japanese Unexamined Patent Publication No. 2009-212482

However, since the rectifying walls described in the above-mentioned Patent Documents 1 and 2 hinder the loading and unloading of the substrate, it is necessary to retreat to the upper side so as not to hinder the loading and unloading of the glass substrate. Deposits and the like on the rectifying member may be peeled off and become particles, which may fall onto the substrate to be processed and contaminate the substrate to be processed.

In addition, the gas flow guide member described in Patent Document 3 has deposits (hereinafter referred to as deposits) that are likely to adhere to the products produced by etching or reaction by-products of the etching gas, and the particles are still attached. In the danger of the substrate being processed. Also, the airflow guide member of Patent Document 3 can reduce the unevenness of the processing of the outer peripheral part due to the load effect to a certain extent, but in recent years, the in-plane uniformity of the processing has been further desired.

Therefore, the object of the present invention is to provide a substrate processing apparatus that can further obtain in-plane uniformity of processing and suppress particles from adhering to the substrate to be processed when the metal film of the substrate is processed by plasma etching.

In order to solve the above-mentioned problems, the present invention provides a substrate processing apparatus, which is characterized in that it is provided with: a processing container for accommodating a substrate with a metal film formed on the surface; The substrate is placed in the container; the processing gas introduction mechanism is arranged above the substrate mounting table in the processing container opposite to the substrate mounting table, and in the processing container, it introduces gas containing gas toward the substrate mounting table There is a processing gas containing halogen gas; the exhaust mechanism exhausts the inside of the processing container from the surrounding of the substrate mounting table; It has a guide part "arranged above the peripheral edge of the substrate mounting table along the circumferential direction of the substrate mounting table, and guides the processing gas introduced from the processing gas introduction mechanism to the outside", and the outer peripheral part is installed On the inner wall of the aforementioned processing container; and the plasma generating mechanism, in the aforementioned processing container, generates a plasma of a processing gas for performing plasma etching on the aforementioned metal film of the aforementioned substrate, and the aforementioned airflow guiding member has: The inner part becomes the aforementioned guide part; and the outer part is more outer than the aforementioned substrate mounting table, and between the aforementioned inner part and the aforementioned outer part, there is a connection part formed so that the aforementioned outer part is lower than the aforementioned inner part. The above-mentioned inside part and the above-mentioned outside part are connected by the method of the level difference of the position, and the slit provided along the circumferential direction is provided in the said outside part.

In the present invention, the substrate may be in a rectangular shape, the substrate mounting table may have a rectangular mounting surface corresponding to the substrate, and the airflow guiding member may be in a frame shape.

The aforementioned airflow guiding member can be formed by assembling a pair of long side portions corresponding to the long sides of the aforementioned substrate and a pair of short side portions corresponding to the short sides of the aforementioned substrate. In this case, the above-mentioned long-side part and the above-mentioned short-side part can be bent by one plate to form a part corresponding to the above-mentioned A portion of the inner portion, a portion corresponding to the outer portion, and a portion corresponding to the connecting portion. Also, the aforementioned long-side portion and the aforementioned short-side portion have a trapezoidal shape such that the joining portions are formed at 45°, and each of the portions corresponding to the aforementioned inner portion, the portion corresponding to the aforementioned outer portion, and the Assembling is performed in a state where the parts corresponding to the above-mentioned connecting parts are joined.

The aforementioned slit formed in the aforementioned long side portion and the aforementioned slit formed in the aforementioned short side portion are such that the ends do not reach the junction of the aforementioned long side portion and the aforementioned short side portion state to be formed.

The width of the aforementioned slit is set so as to be able to adjust the exhaust balance of "exhaust through the aforementioned slit" and "exhaust through the gap between the aforementioned airflow guide member and the aforementioned substrate mounting table", so that the peripheral portion of the aforementioned substrate Values in which the degree of etch rate suppression is optimized are preferred.

The aforementioned metal film is an Al-containing film, and the aforementioned processing gas may contain chlorine gas. In this case, as the aforementioned Al-containing film, a Ti/Al/Ti laminated film can be used.

According to the present invention, since the annular airflow guide member is provided and a gap is formed on the outer side of the airflow guide member than the substrate mounting table, the air except for the air that passes through the gap between the airflow guide member and the substrate mounting table is discharged. In addition to the gas flow to the outside, it is also possible to form a gas flow that is discharged from the gas introduction mechanism through the slit. Placement Above the peripheral edge, a guide portion for guiding the processing gas introduced from the processing gas introducing mechanism to the outside, and the outer peripheral part is installed on the inner wall of the aforementioned processing container. Therefore, the flow rate of the processing gas between the gas flow guide member and the substrate mounting table can be reduced, and the etching of the peripheral portion of the substrate can be suppressed and the in-plane distribution of the etching can be made uniform. Also, by providing the slit, the process gas is discharged through the slit without remaining on the air flow guide member. Therefore, the amount of deposits adhering to the surface of the airflow guiding member or the inner wall of the processing container can be reduced, and the adhering of particles to the substrate can be suppressed.

1: Substrate processing device

2: chamber (processing container)

3: Substrate mounting table

5: Substrate

8: Lift pin

10: Nozzle

15: Process gas supply pipe

18: Process gas supply source

24a, 24b: matchers

25a, 25b: high frequency power supply

29: Exhaust port

30: exhaust part

40: Airflow guiding member

40-1: inner part

40-2: Outer part

40a: Long side side member

40b: short side side member

41: Gap

41a: Long side gap

41b:Short edge gap

42: Step difference

50: Control Department

G: Substrate

[ Fig. 1] Fig. 1 is a vertical sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

[Fig. 2] According to the horizontal sectional view of II-II ' line of Fig. 1.

[ Fig. 3] Fig. 3 is a partial cross-sectional view showing part of an air flow guide member provided with the substrate processing apparatus shown in Figs. 1 and 2 .

[ Fig. 4 ] A partial cross-sectional view showing a receiving and receiving state of a substrate in the substrate processing apparatus shown in Figs. 1 and 2 .

[ Fig. 5] Fig. 5 is a diagram showing the flow of processing gas in the chamber in the processing apparatus of Patent Document 3.

[ Fig. 6] Fig. 6 is a diagram showing flow of processing gas in a chamber of the substrate processing apparatus shown in Figs. 1 and 2 .

[Fig. 7] shows the distance from the end of the substrate and the distance from the end of the substrate in the case of changing the width of the slit of the gas flow guide member between ₀ and 40 mm and using Cl2 gas as the processing gas to etch the Ti/Al/Ti laminated film. A graph of the relationship between etch amount.

[ Fig. 8 ] A graph showing the deposition amount after etching in the case of "with gap" and without "gap" in the airflow guide member at the points shown in Fig. 9 .

[ Fig. 9] Fig. 9 is a diagram showing a position where the deposition amount of Fig. 8 was measured.

Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.

<Substrate processing equipment>

Fig. 1 is a vertical sectional view showing a substrate processing apparatus according to an embodiment of the present invention; Fig. 2 is a horizontal sectional view along line II-II ' of Fig. 1 .

As shown in FIG. 1 , the substrate processing apparatus 1 is configured as a capacitively coupled plasma processing apparatus for performing plasma etching processing on a substrate to be processed (hereinafter simply referred to as “substrate”) G, and the substrate to be processed is A predetermined metal film, for example, a metal film containing Al such as an Al film or a Ti/Al/Ti laminated film is formed on a glass substrate for forming a rectangular FPD. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (Electro Luminescence; EL) display, a plasma display panel (PDP), and the like.

The substrate processing apparatus 1 includes, for example, a chamber 2 made of aluminum whose surface is treated with alumite (anodized treatment). And it is shaped into a corner tube shape.

At the bottom of the chamber 2, there is provided a substrate mounting table 3 for mounting the substrate G via a spacer member 4 made of a frame-shaped insulator. The surface of the substrate mounting table 3 (substrate mounting surface) is formed in a rectangular shape slightly larger than the substrate G. As shown in FIG. The substrate mounting table 3 functions as a lower electrode. The substrate mounting table 3 is equipped with: a base material 5, which is made of metal such as aluminum, and constitutes the mounting base body; an insulating shielding ring 6 is provided around the upper part of the base material 5; an insulating ring 7 is provided on around the side of the base material 5; and a plurality of lift pins 8 for lifting the base plate G up and down. The lift pin 8 is inserted through the insertion hole 5a provided in the base material 5, and is lifted up and down by a lift mechanism (not shown). Between the spacer member 4 and the base material 5, and between the spacer member 4 and the bottom wall 2a of the chamber 2, are hermetically sealed, forming a space 9 with an atmospheric atmosphere between the base material 5 and the bottom wall 2a, By means of this space 9, atmospheric insulation between the substrate 5 and the bottom wall 2a is achieved.

In the base material 5, power supply lines 23a and 23b are connected, and the power supply line 23a is connected with a matching device 24a and a high-frequency power supply 25a for plasma generation, and the power supply line 23b is connected with a matching device 24b and a bias voltage High-frequency power supply 25b for generation. The frequency of the high-frequency power supply 25a for plasma generation is in the range of 1-100MHz, for example, 13.56MHz. The high-frequency power supply 25b for bias voltage generation is used to introduce ions into the substrate G on the base material 5 to perform anisotropic etching, and uses a frequency in the range of 50 kHz to 10 MHz, for example, 3.2 MHz.

In addition, an electrostatic chuck (not shown) for electrostatically adsorbing the substrate G is provided on the surface of the base material 5 of the substrate mounting table 3 . Also, on substrate 5 Inside, a temperature adjustment mechanism and a temperature sensor (both not shown) for controlling the temperature of the substrate G are provided. In addition, between the base material 5 of the substrate mounting table 3 and the bottom wall 2a of the chamber 2, it is to ensure the insulation between them and prevent the substrate mounting table 3 from bending due to the vacuum exhaust in the chamber 2. In some cases, it is fastened by a plurality of fasteners (not shown). Furthermore, a heat transfer gas supply mechanism (not shown) is provided which supplies heat between the substrate G and the substrate stage 3 in the state where the substrate G is placed on the substrate stage 3 . The heat transfer gas for heat transfer is, for example, He gas.

On the upper part of the chamber 2 , a shower head 10 that supplies a processing gas into the chamber 2 and functions as an upper electrode is installed facing the substrate mounting table 3 . The shower head 10 has a gas diffusion space 11 for diffusing the processing gas inside, and a plurality of discharge holes 12 for discharging the processing gas are formed on the surface facing the substrate mounting table 3 .

A gas inlet 14 is provided on the shower head 10 , and a processing gas supply pipe 15 is connected to the gas inlet 14 . The processing gas supply pipe 15 is connected to a processing gas supply source 18 . In addition, an on-off valve 16 and a mass flow controller 17 are interposed in the processing gas supply pipe 15 . Actually, a plurality of processing gas supply sources 18 are provided according to the amount of processing gas, and processing gas supply pipes 15 are respectively extended from each processing gas supply source 18 . A processing gas for plasma etching is supplied from a processing gas supply source 18 . As the processing gas, a halogen-containing gas such as Cl ₂ gas or an inert gas such as Ar gas added to Cl ₂ gas can be used. Boron trichloride (BCl ₃ ) gas, carbon tetrachloride (CCl ₄ ) gas, carbon tetrafluoride (CF ₄ ) or those added with inert gas, mixed with Cl ₂ gas, BCl ₃ gas can also be used , CCl ₄ gas, CF ₄ gas mixture of two or more, and such a mixture gas is added with an inert gas.

The four corners of the bottom wall of the chamber 2 are respectively formed with exhaust ports 29 (see FIG. 2 ), and each exhaust port 29 is provided with an exhaust portion 30 . The exhaust part 30 has: an exhaust pipe 31, which is connected to the exhaust port 29; an automatic pressure control valve (APC) 32, which controls the pressure in the chamber 2 by adjusting the opening and closing degree of the exhaust pipe 31 and a vacuum pump 33 for exhausting the chamber 2 through the exhaust pipe 31 . Moreover, the inside of the chamber 2 is exhausted by the vacuum pump 33. During the plasma etching process, the opening and closing degree of the automatic pressure control valve (APC) 32 is adjusted to set and maintain the inside of the chamber 2 at a predetermined value. Vacuum atmosphere.

On one side wall of the chamber 2, a loading/unloading port 35 for loading and unloading the substrate G and a gate valve 36 for opening and closing the loading/unloading port are provided.

At a position above the peripheral portion of the substrate mounting table 3, an airflow guide member 40 is provided, and the airflow guide member 40 has a guide portion for guiding the flow of gas outward. The air flow guide member 40 will be described later.

In addition, a baffle plate (not shown) for adjusting the pressure loss of the gas flow path is provided in the space between the substrate mounting table 3 and the inner wall of the chamber 2 below the airflow guiding member 40 .

In addition, the substrate processing apparatus 1 further includes a control unit 50 . The control unit 50 is constituted by a computer equipped with a CPU and a memory unit. Each component of the substrate processing apparatus 1, such as a gas supply system, an exhaust system, The mechanism for supplying high-frequency power, the driving mechanism of the lift pin 8, the driving mechanism of the gate valve 36, etc. are controlled so as to perform predetermined processing according to the processing recipe (program) memorized in the memory unit. Processing recipes are stored in memory media such as hard disks, optical disks, and semiconductor memories.

<Airflow guide member>

Next, the airflow guide member 40 will be described.

FIG. 3 is an enlarged partial cross-sectional view showing a part of the airflow guide member 40 of the substrate processing apparatus 1 according to the present embodiment.

The airflow guide member 40 is made of metal such as aluminum or ceramics, and is provided in a ring shape, that is, a frame shape, between the position on the inner wall of the chamber 2 and the position above the periphery of the substrate mounting table 3, and has The function of guiding the gas flow of the processing gas from the shower head 10 to the outside of the substrate G. As shown in FIG. 3 , the air flow guide member 40 has an inner portion 40 - 1 disposed above the periphery of the substrate mounting table 3 along the circumferential direction of the substrate mounting table, and constitutes the air flow introduced from the shower head 10 . The guide part for guiding the process gas outward; and the outer part 40-2, which is arranged outside the substrate mounting table 3 and installed on the inner wall of the chamber 2, between the inner part 40-1 and the outer part 40-2. 2, a step 42 is formed so that the outer portion 40-2 is located at a lower position than the inner portion 40-1.

The step 42 is, as shown in FIG. 4 , in a state where the substrate G is lifted upwards above the substrate mounting table 3 by the lift pin 8 , and the transfer arm 62 of the transfer device 60 is inserted into the chamber 2 from the loading and unloading port 35 . , when receiving and receiving the substrate G, it is formed so as to be avoided from the base 61 of the transfer arm 62 . However, if it is not necessary to avoid the base of the conveying device 63, it is not necessary to provide a step 42.

As shown in FIG. 2, the air flow guiding member 40 is formed by assembling two long side members 40a corresponding to the long sides of the substrate G (substrate mounting table 3) and two short side members 40b corresponding to the short sides. constitute. Both the long-side member 40a and the short-side member 40b can be formed by bending a single plate to form the part constituting the inner part 40-1, the part constituting the outer part 40-2 and the part of the step 42. The ends of the long-side side member 40a and the short-side side member 40b are trapezoidal shapes cut at 45°. The ends can be assembled in a joined state, respectively.

A slit 41 is formed along the circumferential direction in a portion outside the substrate mounting table 3 of the airflow guide member 40 . In the case of this example, a slit 41 is formed in the outer portion 40-2. The slit 41 has: two long-side slits 41a, which are respectively formed on the two long-side side members 40a along the lengthwise direction; and short-side slits 41b, which are respectively formed on the short-side sides along the lengthwise direction. Member 40b. The long-side slit 41a and the short-side slit 41b are disposed in a discontinuous manner when the ends do not reach the joint surface of the long-side member 40a and the short-side member 40b, and have a length longer than the substrate G, respectively. The length of the side and the short side is slightly shorter. Thereby, no gap exists above the exhaust port 29 . The slit 41 has the function of controlling the flow rate of the gas at the peripheral portion of the substrate G and the function of reducing the deposition toward the gas flow guide member 40 . In addition, the slit 41 may also be formed in the inner portion 40-1.

The height a from the upper surface of the substrate mounting table 3 (shading ring 6 ) and the width of the slit 41 (long side slit 41a and short side slit 41b ) of the inner portion 40 - 1 b, is appropriately set so as to properly control the etching rate of the peripheral portion of the substrate. The inner end of the inner portion 40-1 is located outside the end of the substrate G from the viewpoint of preventing the movement of the substrate G and preventing particles as much as possible.

Also, as shown in FIGS. 2 and 3 , the long side members 40a and the short side members 40b of the air flow guiding member 40 are supported by a plurality of (six in the figure) support rods 43, the A plurality of support rods 43 are attached to the substrate mounting table 3 . The support rod 43 is attached to the inner part 40-1. The other end of the support rod 43 is mounted on the chamber 2 or the spacer member 4 . By these support rods 43, the height position of the inner side part 40-1 which is the guide part of the air flow guide member 40 is kept constant.

<Processing operation of substrate processing equipment>

Next, the processing operation of the substrate processing apparatus 1 configured in this way will be described.

First, the gate valve 36 is opened, and the substrate G is carried into the chamber 2 from a vacuum transfer chamber (not shown) through the loading and unloading port 35 by the transfer arm 62 of the transfer device 60 (see FIG. 4 ), and the lift pins 8 are raised. , the lift pins 8 protrude from the substrate mounting surface of the substrate mounting table 3 , and the substrate G is placed on the lift pins 8 . After retracting the transfer arm 62 to the vacuum transfer chamber, the lift pin 8 is lowered to place the substrate G on the substrate mounting surface of the substrate mounting table 3, and the gate valve 36 is closed.

The temperature of the base material 5 of the substrate mounting table 3 is adjusted to control the temperature of the substrate G by means of a temperature adjustment mechanism (not shown), and while the vacuum pump 33 is used to exhaust the chamber 2, the automatic The pressure control valve (APC) 32 adjusts the pressure in the chamber 2 to a predetermined degree of vacuum. The flow rate is adjusted from the processing gas supply source 18 by the mass flow controller 17. A halogen-containing gas such as a processing gas containing Cl ₂ gas is introduced into the chamber 2 .

In this state, high-frequency power for plasma generation is applied from the high-frequency power supply 25a to the base material 5 of the substrate mounting table 3 through the matching device 24a, and the plasma is generated between the substrate mounting table 3 as the lower electrode and the shower head 10 as the upper electrode. A high-frequency electric field is generated between them to generate a plasma of a processing gas, and an etchant such as chlorine radicals (Cl*) generated by the plasma is used to etch a metal film such as an Al film on the substrate G. Thus, the Al-containing film reacts with Cl*, etc., and the resulting reaction product is removed as a gas. At this time, high-frequency power for bias voltage generation is applied to the base material 5 from the high-frequency power supply 25b via the matching unit 24b, and ions in the plasma are introduced into the substrate G to increase the anisotropy of etching.

During the etching process of the metal film caused by the halogen-containing gas, since the gas flow of the processing gas is guided to the outside of the substrate G by providing the gas flow guide member 40, the flow of etchant from the chamber can be suppressed. 2 Diffusion of the inner wall portion toward the substrate G, and suppression of etching of the peripheral portion of the substrate G.

However, in Patent Document 3, as the gas flow guide member, a pure plate without gaps is arranged in a frame shape. However, in this case, as shown in FIG. The narrow space between the peripheral portion of the substrate mounting table 3 and the gas flow guide member 40 ′ , therefore, the flow rate of the processing gas passing through the peripheral portion of the substrate G increases, whereby the etching of the peripheral portion of the substrate G is promoted, so it is found that the substrate The etching suppression effect of the G peripheral part was not sufficient.

Therefore, in this embodiment, the gas flow guide member 40 provided with the slit 41 is arranged outside the substrate mounting table 3 , thereby forming a gas flow discharged through the slit 41 as shown in FIG. 6 . Thereby, the flow rate of the processing gas between the gas flow guide member 40 and the substrate mounting table 3 can be reduced, the etching of the peripheral portion of the substrate G can be suppressed, and the in-plane distribution of the etching can be made uniform.

At this time, by adjusting the width of the slit 41, the exhaust balance of "exhaust through the slit 41" and "exhaust through the gap between the airflow guide member 40 and the substrate mounting table 3" can be adjusted, and the substrate can be controlled. The gas flow rate at the peripheral portion of G and its exhaust balance are set to an ideal one that can optimize the degree of etching suppression at the peripheral portion of the substrate G, thereby making the in-plane distribution of etching more uniform.

The width b of the slit 41 at this time is determined so that it becomes an optimum value by etching conditions, the height a of the airflow guide member 40, and the like. In addition, the height a of the airflow guide member 40 is appropriately set so as to optimize the airflow toward the outward side. For example, in order to reduce the etching amount of the peripheral portion of the substrate G, the height a of the airflow guiding member 40 can be lowered by increasing the ratio of the width b of the slit 41 to the height a of the airflow guiding member 40, or the slit The width b of 41 becomes wider. Also, in order to increase the etching amount of the peripheral portion of the substrate G, the height a of the airflow guiding member 40 can be increased by reducing the ratio of the width b of the slit 41 to the height a of the airflow guiding member 40, or the slit can be made larger. The width b of 41 is narrowed.

FIG. 7 shows the distance from the end of the substrate when the width of the slit 41 of the gas flow guide member 40 is changed between ₀ and 40 mm, and when the Ti/Al/Ti laminated film is etched using Cl gas as the processing gas. A plot of distance versus etch rate. The etching conditions at this time are as follows.

Etching conditions

Cl gas flow rate: _3700sccm

Pressure: 15mTorr(2Pa)

High-frequency power for plasma generation: 12kW

High-frequency power for bias voltage generation: 6kW

Time: 60sec

As shown in FIG. 7 , when no slit is formed, it is known that the etching rate of the peripheral portion of the substrate is high due to the loading effect. On the other hand, the etching rate of the peripheral portion of the substrate is reduced by forming the slit. Also, there is an optimum value of the width b of the slit depending on the etching conditions or the height a of the airflow guiding member 40, etc. The etching, and make the etching distribution become the most appropriate. On the other hand, when the slit width is 20 mm or 40 mm, it is known that the etching rate of the peripheral portion of the substrate is lowered on the contrary.

In this way, it was confirmed that by optimizing the width b of the slit 41 in accordance with the etching conditions, the height a of the air flow guide member 40, etc., the etching amount of the peripheral portion of the substrate G is reduced, and etching with high in-plane uniformity is performed. .

In addition, since the slit 41 is formed in the air flow guide member 40 , the processing gas is discharged through the slit 41 without remaining on the air flow guide member 40 . Therefore, it is possible to reduce the impact of deposits on the surface of the air flow guide member 40 or The amount of adhesion on the inner wall of the chamber 2 can be controlled, and the adhesion of particles to the substrate G can be suppressed.

Fig. 8 shows the point shown in Fig. 9, that is, the surface of the airflow guiding member 40 (point 1 in Fig. 9) and the part above the airflow guiding member 40 of the inner wall of the chamber 2 (Point 2 of FIG. 9 ), the graph of the deposition amount after etching in the case of "with gap" and without "gap" of the airflow guide member. Here, using the substrate processing apparatus shown in FIG. 1 and FIG. 2 , the slit width was set to 15 mm, and the amount of deposits after 200 sets of etching processes in two stages under the following conditions were repeated was measured. In addition, the amount of deposits does not directly measure the amount of deposits on the airflow guide member 40 and the inner wall of the chamber 2, but sets a small piece of the glass substrate at this position, and measures the amount of film formed on the surface of the glass substrate as the amount of deposits. . At this time, the measurement of the amount of accumulation is to use a gradient meter.

Etching conditions

Phase 1

Cl gas flow rate: _3700sccm

Time: 60sec

Phase 2

Cl gas flow rate: _1500sccm

Time: 30sec

common conditions

Pressure: 15mTorr(2Pa)

High-frequency power for plasma generation: 12kW

High-frequency power for bias voltage generation: 6kW

As shown in FIG. 8 , it was confirmed that both points 1 and 2 reduced the accumulation by setting gaps.

Furthermore, the airflow guide member 40 has an inner portion 40-1 on the substrate mounting table 3 side and an outer portion 40-2 on the inner wall side of the chamber 2, and a space between the inner portion 40-1 and the outer portion 40-2 is provided. , a step 42 is formed so that the outer portion 40-2 is located at a lower position than the inner portion 40-1. Thereby, as shown in FIG. 4 , in a state where the substrate G is lifted upward by the lift pin 8 toward the upper side of the substrate mounting table 3 , the transport arm 62 of the transport device 60 is inserted into the chamber 2 from the loading and unloading port 35 , When receiving and receiving the substrate G, interference with the base 61 of the transfer arm 62 can be prevented. Also, by forming the outer portion 40-2 low in this way, even if deposits adhere to the portion, it is possible to make it difficult for particles to adhere to the substrate G. When receiving and receiving the substrate G, as shown in FIG. 4, since the substrate G is raised above the airflow guide member 40, there is no member above the substrate G, and particle adhesion can be reduced. Hazards on substrate G.

Furthermore, since the airflow guide member 40 is constituted by assembling the long-side member 40a and the short-side member 40b, it can be easily installed even in a large processing apparatus for large substrates. Also, since the long-side member 40a and the short-side member 40b can be easily formed by bending a single plate, the part constituting the inner part 40-1, the part constituting the outer part 40-2, and the steps can be easily formed. The difference part, again, the ends of the long-side side member 40a and the short-side side member 40b are in the shape of a trapezoid cut at 45°, and these constitute the part of the inner part 40-1, the part of the outer part 40-2 and the The ends of the step portion can be assembled in a joined state, respectively, so even if there is a step, the Can be easily assembled.

Furthermore, since the slit 41 formed on the outer side portion 40-2 of the airflow guiding member 40 has: two long-side slits 41a, which are respectively formed on two long-side side members 40a along its length direction; and The short-side slits 41b are respectively formed on the short-side side members 40b along its length direction, and the long-side slits 41a and the short-side slits 41b are discontinuous, so the long-side slits 41a and the short-side side members 40b can be easily ground joint. Also, adjust the length of the long-side slit 41a and the short-side side member 40b so that there is no slit above the exhaust port 29, so that the exhaust gas will not be directly discharged to the exhaust port 29 through the slit 41, and the exhaust flow can be suppressed. The resulting rise of particles.

<Other applications>

As mentioned above, although one embodiment of this invention was described, this invention is not limited to the said embodiment, Various deformation|transformation is possible within the scope of the idea of this invention. For example, in the above-mentioned embodiment, although it has been described that the present invention is applied to a capacitively coupled plasma processing device, it is not limited to this, and it can also be applied to an inductively coupled plasma processing device or a microwave plasma processing device. and other plasma treatment devices.

Moreover, in the above-mentioned embodiment, although the example which used the glass substrate as a board|substrate was demonstrated, it may be other insulating board|substrates, such as a ceramic board|substrate. Moreover, it may be a semiconductor substrate or the like.

2‧‧‧chamber

3‧‧‧substrate mounting table

4‧‧‧Spacer components

5‧‧‧Substrate

5a‧‧‧Through hole

6‧‧‧Shading ring

7‧‧‧Insulation ring

8‧‧‧Lift pin

9‧‧‧space

29‧‧‧Exhaust port

35‧‧‧Import and export

36‧‧‧gate valve

40‧‧‧Airflow guide components

40a‧‧‧long side member

40-1‧‧‧Inner part

40-2‧‧‧outer part

41‧‧‧Gap

41a‧‧‧long side gap

42‧‧‧step difference

43‧‧‧Strut rod

G‧‧‧substrate

Claims (9)

A substrate processing apparatus, characterized by comprising: a processing container for accommodating a substrate having a metal film formed on its surface; a substrate mounting table set in the processing container on which the substrate is placed; a processing gas introduction mechanism and the aforementioned The substrate mounting table is oppositely disposed above the substrate mounting table in the processing container, and in the processing container, a processing gas containing a halogen-containing gas is introduced toward the substrate mounting table; The periphery of the platform is used to exhaust the inside of the processing container; the annular airflow guide member is arranged in the processing container, and the inner peripheral part has the function of "along the circumferential direction of the substrate mounting table, and is arranged in the above-mentioned Above the periphery of the substrate mounting table, there is a guide portion for guiding the processing gas introduced from the aforementioned processing gas introduction mechanism to the outside, and the outer peripheral part is installed on the inner wall of the aforementioned processing container; and the plasma generation mechanism is in the aforementioned In the processing container, a plasma of a processing gas for plasma etching the metal film on the substrate is generated, and the gas flow guide member has: an inner part, which becomes the guide part; and an outer part, which is smaller than the aforementioned substrate On the outer side of the mounting table, between the inner part and the outer part, there is a connecting part that connects the inner part and the outer part so that the outer part is lower than the inner part in such a manner that a step is formed. , on the aforementioned outer portion has a set along its circumferential direction gap. For example, the substrate processing apparatus of claim 1, wherein the substrate is rectangular, the substrate mounting table has a rectangular mounting surface corresponding to the substrate, and the air flow guiding member is frame-shaped. The substrate processing apparatus according to claim 1 of the scope of the patent application, wherein the airflow guiding member is a pair of long side parts corresponding to the long sides of the aforementioned substrate and a pair of short sides corresponding to the short sides of the aforementioned substrate The side parts are assembled to form. For example, the substrate processing apparatus according to claim 3 of the patent scope, wherein, the aforementioned long-side portion and the aforementioned short-side portion are both bent to form a portion corresponding to the aforementioned inner portion and a portion corresponding to the aforementioned outer portion. The part and the part corresponding to the aforementioned connecting part. For example, the substrate processing apparatus according to claim 4 of the scope of the patent application, wherein, the aforementioned long-side portion and the aforementioned short-side portion are in the shape of a trapezoid such that the joining portions are 45°, and each corresponding to the aforementioned inner portion The part corresponding to the said outer part and the part corresponding to the said connection part are assembled in the state which joined. Such as the substrate processing device of item 4 or 5 of the scope of the patent application, wherein, The aforementioned slit formed in the aforementioned long side portion and the aforementioned slit formed in the aforementioned short side portion are in a state where the ends do not reach the junction between the aforementioned long side portion and the aforementioned short side portion be formed below. For example, the substrate processing device according to any one of items 1 to 5 of the scope of the patent application, wherein the width of the aforementioned slit is set to be adjustable for "exhaust through the aforementioned slit" and "through the aforementioned airflow guiding member and the aforementioned substrate carrier." The exhaust balance of the "exhaust between the stages" is a value that optimizes the degree of suppression of the etching rate of the peripheral portion of the aforementioned substrate. The substrate processing apparatus according to any one of items 1 to 5 of the patent claims, wherein the aforementioned metal film is an Al-containing film, and the aforementioned processing gas includes chlorine gas. For example, the substrate processing device of claim 8, wherein the aforementioned Al-containing film is a Ti/Al/Ti laminated film.

Images