TWI805891B - Plasma treatment device - Google Patents

Plasma treatment device Download PDF

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TWI805891B
TWI805891B TW109100701A TW109100701A TWI805891B TW I805891 B TWI805891 B TW I805891B TW 109100701 A TW109100701 A TW 109100701A TW 109100701 A TW109100701 A TW 109100701A TW I805891 B TWI805891 B TW I805891B
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mounting table
plasma processing
substrate
baffles
processing chamber
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TW202040685A (en
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田中誠治
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

[課題]提供抑制不穩定的放電之技術。 [解決手段]處理室，係於其內部設置有載置基板的載置台，對基板實施電漿處理。排氣口，係設置於載置台之周圍之比起載置台的用於載置基板之載置面更低的位置，對處理室內實施排氣。複數個擋板，係由導電性材料形成，分別連接於接地電位，相對於往排氣口的排氣之流動設置於比排氣口更上游側，從載置台之側面側與處理室之側面側交替突出，該突出的前端部分隔開間隔而重複。[Problem] Provide a technique for suppressing unstable discharge. [Solution] A processing chamber is provided with a mounting table for mounting a substrate therein, and plasma processing is performed on the substrate. The exhaust port is provided around the mounting table at a position lower than the mounting surface of the mounting table on which the substrate is mounted, and exhausts the processing chamber. A plurality of baffles are made of conductive material, are connected to the ground potential, and are arranged on the upstream side of the exhaust port relative to the flow of exhaust gas to the exhaust port, from the side of the mounting table and the side of the processing chamber. The sides protrude alternately, and the protruding front ends repeat at intervals.

Description

電漿處理裝置Plasma treatment device

本揭示關於電漿處理裝置。The present disclosure relates to plasma treatment devices.

專利文獻1揭示的電漿處理裝置，係在載置基板的載置台之周圍，以對進行電漿處理的處理區域與連結於排氣系統的排氣區域進行區隔的方式，設置有由導電性材料形成且設為接地電位的複數個間隔構件。 [先前技術文獻] [專利文獻]The plasma processing apparatus disclosed in Patent Document 1 is provided with a conductive A plurality of spacer members formed of a non-conductive material and set to a ground potential. [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開2015-216260號公報[Patent Document 1] Japanese Patent Laid-Open No. 2015-216260

[發明所欲解決的課題][Problems to be Solved by the Invention]

本揭示提供抑制不穩定的放電之技術。 [解決課題的手段]The present disclosure provides techniques for suppressing unstable discharges. [means to solve the problem]

本揭示之一態樣的電漿處理裝置，係具有：處理室；排氣口；及複數個擋板。處理室，係於其內部設置有載置基板的載置台，且對基板實施電漿處理。排氣口，係設置於載置台之周圍之比起載置台的載置基板之載置面更低的位置，且對處理室內實施排氣。複數個擋板，係由導電性材料形成，分別連接於接地電位，相對於往排氣口的排氣之流動設置於比排氣口更上游側，從載置台之側面側與處理室之側面側交替突出，該突出的前端部分係隔開間隔而重複。 [發明效果]A plasma processing device according to an aspect of the present disclosure has: a processing chamber; an exhaust port; and a plurality of baffles. The processing chamber is provided with a mounting table for mounting the substrate inside, and plasma processing is performed on the substrate. The exhaust port is provided around the mounting table at a position lower than the mounting surface of the mounting table on which the substrate is mounted, and exhausts the processing chamber. A plurality of baffles are made of conductive material, are connected to the ground potential, and are arranged on the upstream side of the exhaust port relative to the flow of exhaust gas to the exhaust port, from the side of the mounting table and the side of the processing chamber. The sides protrude alternately, and the protruding front end portions are repeated at intervals. [Invention effect]

依據本揭示可以抑制不穩定的放電。According to the present disclosure, unstable discharge can be suppressed.

以下，參照圖面詳細說明本申請揭示的電漿處理裝置之實施形態。又，本實施形態並非用來限定揭示的電漿處理裝置者。Hereinafter, embodiments of the plasma processing apparatus disclosed in the present application will be described in detail with reference to the drawings. In addition, this embodiment is not intended to limit the disclosed plasma processing apparatus.

在平板顯示器(FPD)之製造工程中，存在對玻璃基板等之基板進行電漿蝕刻或成膜處理等之電漿處理的工程。電漿處理係使用電漿蝕刻裝置或電漿CVD成膜裝置等之各種電漿處理裝置。In the manufacturing process of a flat panel display (FPD), there is a process of performing a plasma treatment such as plasma etching or film formation treatment on a substrate such as a glass substrate. Plasma treatment uses various plasma treatment equipment such as plasma etching equipment and plasma CVD film forming equipment.

但是，電漿處理裝置中，會有電漿流入排氣系統，於排氣系統中產生不穩定的放電之情況。於此，期待抑制不穩定的放電。However, in the plasma treatment device, the plasma may flow into the exhaust system, causing unstable discharge in the exhaust system. Here, it is desired to suppress unstable discharge.

[電漿處理裝置之構成] 首先，對實施形態的電漿處理裝置10之構成進行說明。圖1係表示實施形態的電漿處理裝置之概略構成之一例之垂直剖面圖。本實施形態的電漿處理裝置10係構成為感應耦合型之電漿處理裝置，其生成感應耦合電漿，例如對FPD用玻璃基板如此般的矩形基板進行蝕刻處理或灰化處理等之感應耦合電漿處理。[Structure of plasma treatment device] First, the configuration of the plasma processing apparatus 10 of the embodiment will be described. Fig. 1 is a vertical cross-sectional view showing an example of a schematic configuration of a plasma processing apparatus according to an embodiment. The plasma processing device 10 of this embodiment is constituted as an inductively coupled plasma processing device, which generates inductively coupled plasma, for example, an inductively coupled process for etching or ashing a rectangular substrate such as a glass substrate for FPD. Plasma treatment.

電漿處理裝置10具有由導電性材料例如內壁面實施了陽極氧化處理的鋁形成的角筒形狀之氣密的本體容器1。本體容器1，可以分解組裝，藉由接地線1a進行接地。本體容器1係藉由介質壁2而上下被劃分為天線室3及處理室4。介質壁2構成處理室4之天井壁。介質壁2係由Al2 O3 等之陶瓷、石英等構成。The plasma processing apparatus 10 has an airtight main body container 1 in the shape of an angular cylinder formed of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 can be disassembled and assembled, and is grounded through the grounding wire 1a. The body container 1 is divided into an antenna chamber 3 and a processing chamber 4 up and down by a dielectric wall 2 . The medium wall 2 constitutes the ceiling wall of the treatment chamber 4 . The dielectric wall 2 is made of ceramics such as Al 2 O 3 , quartz, or the like.

在本體容器1中的天線室3之側壁3a與處理室4之側壁4a之間設置有朝內側突出的支撐棚架5。於支撐棚架5之上載置有介質壁2。Between the side wall 3a of the antenna chamber 3 and the side wall 4a of the processing chamber 4 in the main container 1, a support frame 5 protruding inward is provided. The medium wall 2 is placed on the support frame 5 .

於介質壁2之下側部分嵌入有處理氣體供給用之噴淋筐體11。噴淋筐體11設置為十字狀，成為從下方支撐介質壁2的構造，例如成為梁構造。又，對前述介質壁2進行支撐的噴淋筐體11，係成為藉由複數根吊帶(未圖示)懸吊於本體容器1之天井的狀態。支撐棚架5及噴淋筐體11可以被介質構件披覆。A shower housing 11 for supplying process gas is embedded in the lower part of the medium wall 2 . The shower housing 11 is provided in a cross shape and has a structure supporting the medium wall 2 from below, for example, a beam structure. Also, the shower housing 11 supporting the medium wall 2 is in a state of being suspended from the ceiling of the main body container 1 by a plurality of slings (not shown). The supporting frame 5 and the spraying box 11 can be covered by media members.

噴淋筐體11由導電性材料較好是由金屬形成，例如由以不產生污染物的方式內面或外面實施了陽極氧化處理的鋁構成。於噴淋筐體11形成有水平延伸的氣體流路12。於氣體流路12連通有朝下方延伸的複數個氣體吐出孔12a。另一方面，於介質壁2之上表面中央以與氣體流路12連通的方式設置有氣體供給管20a。氣體供給管20a係從本體容器1之天井貫穿外側而連接於包含處理氣體供給源及閥系統等之處理氣體供給系統20。因此，於電漿處理中，從處理氣體供給系統20供給的處理氣體，係經由氣體供給管20a供給至噴淋筐體11之氣體流路12，從形成於噴淋筐體11之下面的氣體吐出孔12a吐出至處理室4內。The shower housing 11 is preferably made of a conductive material, such as metal, for example, aluminum whose inner or outer surfaces are anodized so as not to cause contamination. A gas flow path 12 extending horizontally is formed in the shower housing 11 . A plurality of gas discharge holes 12 a extending downward communicate with the gas flow path 12 . On the other hand, a gas supply pipe 20 a is provided at the center of the upper surface of the medium wall 2 so as to communicate with the gas flow path 12 . The gas supply pipe 20a is connected to the processing gas supply system 20 including a processing gas supply source and a valve system through the outside of the main body container 1 through the ceiling. Therefore, in plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied to the gas flow path 12 of the shower housing 11 through the gas supply pipe 20a, and the gas flow channel 12 formed on the lower surface of the shower housing 11 The discharge hole 12 a discharges into the processing chamber 4 .

於天線室3內配設有高頻(RF)天線13。高頻天線13係將由銅或鋁等之良導電性之金屬形成的天線線圈13a配置成為環狀或渦卷狀等之習知使用的任意之形狀而構成。高頻天線13是具有複數個天線部的多重天線亦可。A radio frequency (RF) antenna 13 is arranged in the antenna room 3 . The high-frequency antenna 13 is configured by arranging an antenna coil 13a made of a highly conductive metal such as copper or aluminum in any conventionally used shape such as a loop or a spiral. The high-frequency antenna 13 may be a multi-antenna having a plurality of antenna units.

於天線線圈13a之端子22連接有朝天線室3之上方延伸的供電構件16。供電構件16之上端經由供電線19連接於高頻電源15。又，於供電線19設置有匹配器14。另外，高頻天線13係藉由絕緣構件所形成之間隔件17與介質壁2分離。電漿處理時，從高頻電源15例如將頻率為13.56MHz之高頻電力供給至高頻天線13。藉此，於處理室4內形成感應電場，藉由感應電場使從噴淋筐體11供給的處理氣體電漿化而生成感應耦合電漿。A power feeding member 16 extending upward from the antenna chamber 3 is connected to the terminal 22 of the antenna coil 13a. The upper end of the power supply member 16 is connected to the high-frequency power source 15 via a power supply line 19 . In addition, a matching unit 14 is provided on the power supply line 19 . In addition, the high-frequency antenna 13 is separated from the dielectric wall 2 by a spacer 17 formed of an insulating member. During plasma processing, high-frequency power with a frequency of, for example, 13.56 MHz is supplied to the high-frequency antenna 13 from the high-frequency power source 15 . Thereby, an induction electric field is formed in the processing chamber 4, and the processing gas supplied from the shower housing 11 is plasmaized by the induction electric field to generate inductively coupled plasma.

於處理室4內之底壁4b上以隔著介質壁2而與高頻天線13呈對置的方式設置有載置台23。載置台23係於上表面具有載置矩形狀之基板G之載置面23a。載置台23由導電性材料例如表面實施了陽極氧化處理的鋁構成。載置台23係經由絕緣體構件24固定。絕緣體構件24係以從載置台23之側面覆蓋下面之周邊部分的方式形成。載置於載置台23的基板G係藉由靜電吸盤(未圖示)進行吸附保持。A mounting table 23 is provided on the bottom wall 4 b in the processing chamber 4 so as to face the high-frequency antenna 13 with the dielectric wall 2 interposed therebetween. The mounting table 23 has the mounting surface 23a on which the rectangular board|substrate G is mounted on the upper surface. The mounting base 23 is made of a conductive material such as aluminum whose surface is anodized. The mounting table 23 is fixed via an insulator member 24 . The insulator member 24 is formed so as to cover the lower peripheral portion from the side surface of the mounting table 23 . The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).

載置台23中經由本體容器1之底壁4b、絕緣體構件24插通有進行基板G之搬出入之升降銷(未圖示)。升降銷藉由設置於本體容器1外的升降機構(未圖示)進行升降驅動而進行基板G之搬出入。又，載置台23作為藉由升降機構可以升降的構造亦可。Lift pins (not shown) for carrying in and out the substrate G are inserted through the bottom wall 4 b of the main body container 1 and the insulator member 24 in the mounting table 23 . The elevating pins are driven up and down by an elevating mechanism (not shown) provided outside the main body container 1 to carry in and out the substrate G. In addition, the mounting table 23 may have a structure that can be raised and lowered by an elevating mechanism.

於載置台23，藉由供電線25經由匹配器26連接有偏壓用之高頻電源27。電漿處理中，高頻電源27係將高頻偏壓(偏壓用高頻電力)施加於載置台。高頻偏壓之頻率例如為6MHz。處理室4內生成的電漿中之離子藉由偏壓用之高頻電力有效地被引入至基板G。A high-frequency power supply 27 for bias voltage is connected to the mounting table 23 via a matching unit 26 via a power supply line 25 . In the plasma processing, the high-frequency power supply 27 applies a high-frequency bias voltage (high-frequency power for bias voltage) to the mounting table. The frequency of the high-frequency bias voltage is, for example, 6 MHz. The ions in the plasma generated in the processing chamber 4 are efficiently introduced into the substrate G by the high-frequency power for biasing.

又，為了控制基板G之溫度，於載置台23內設置有由陶瓷加熱器等之加熱手段或冷媒流路等形成的溫度控制機構及溫度感測器(都未圖示)。In addition, in order to control the temperature of the substrate G, a temperature control mechanism and a temperature sensor (both not shown) formed by heating means such as a ceramic heater or a refrigerant flow path are provided in the mounting table 23 .

另外，在載置有基板G時，載置台23係於基板G之背面側形成冷卻空間(未圖示)。於冷卻空間連接有He氣體流路28用以在規定之壓力下供給作為熱傳導用氣體之He氣體。如此般，藉由對基板G之背面側供給熱傳導用氣體，在真空下可以使基板G之溫度控制性良好。In addition, when the board|substrate G is mounted, the mounting table 23 forms a cooling space (not shown) in the back surface side of the board|substrate G. As shown in FIG. A He gas channel 28 is connected to the cooling space to supply He gas as a heat transfer gas at a predetermined pressure. In this way, by supplying the heat transfer gas to the back side of the substrate G, the temperature controllability of the substrate G can be improved under vacuum.

於處理室4之底壁4b之底部中央形成有開口部4c。供電線25、He氣體流路28及溫度控制機構之配管或配線係經由開口部4c導出本體容器1外。An opening 4 c is formed at the center of the bottom of the bottom wall 4 b of the processing chamber 4 . The power supply line 25, the He gas flow path 28, and the piping or wiring of the temperature control mechanism are led out of the main body container 1 through the opening 4c.

在處理室4的四個側壁4a之中之一個設置有進行基板G之搬出入的搬出入口29a及對搬出入口29a進行開關的閘閥29。One of the four side walls 4 a of the processing chamber 4 is provided with a carry-out port 29 a for carrying in and out the substrate G, and a gate valve 29 for opening and closing the carry-out port 29 a.

於處理室4的載置台23之周圍設置有排氣口30。例如於處理室4的底壁4b沿著載置台23之側面設置有排氣口30。排氣口30係以成為較載置台23之載置面23a低的位置的方式設置於底壁4b。於排氣口30設置有開口擋板30a。開口擋板30a，係藉由形成有多數狹縫的構件或網孔構件、具有多數沖孔的構件形成，可以通過排氣。An exhaust port 30 is provided around the mounting table 23 of the processing chamber 4 . For example, an exhaust port 30 is provided on the bottom wall 4 b of the processing chamber 4 along the side of the mounting table 23 . The exhaust port 30 is provided in the bottom wall 4b so that it may become a position lower than the mounting surface 23a of the mounting table 23. As shown in FIG. An opening shutter 30 a is provided at the exhaust port 30 . The opening stopper 30a is formed of a member having many slits, a mesh member, or a member having many punched holes, through which exhaust air can pass.

於排氣口30連接有排氣部40。排氣部40具有：連接於排氣口30的排氣配管31；藉由對排氣配管31之開度進行調整來控制處理室4內之壓力的自動壓力控制閥(APC)32；及透過排氣配管31對處理室4內實施排氣的真空泵33。藉由真空泵33對處理室4內實施排氣，在電漿處理中，對自動壓力控制閥(APC)32之開度進行調整而將處理室4內設定維持於規定之真空氛圍。An exhaust unit 40 is connected to the exhaust port 30 . The exhaust unit 40 has: an exhaust pipe 31 connected to the exhaust port 30; an automatic pressure control valve (APC) 32 for controlling the pressure in the processing chamber 4 by adjusting the opening of the exhaust pipe 31; The exhaust piping 31 is a vacuum pump 33 for exhausting the inside of the processing chamber 4 . The processing chamber 4 is exhausted by the vacuum pump 33, and the opening of the automatic pressure control valve (APC) 32 is adjusted to maintain the specified vacuum atmosphere in the processing chamber 4 during plasma processing.

相對於往排氣口30的排氣之流動，在排氣口30之更上游側設置有複數個擋板50。本實施形態中，在成為排氣口30之更上游側的處理室4之內壁(側壁4a之內側部分)與載置台23之間，設置有2個擋板50a、50b。擋板50係由金屬等之導電性材料形成，形成為板材。相對於本體容器1之高度方向，擋板50係以從載置台23之側面側與處理室4之側面側交替突出的方式設置。本實施形態中，擋板50a以從載置台23之側面突出的方式設置於上側，擋板50b在擋板50a之下側隔開規定之間隔以從處理室4之側面(側壁4a)突出的方式設置。擋板50a與擋板50B，至彼等突出的前端部分51a、51b之長度之合計，係以比起處理室4之內壁與載置台23之間之寬度更長的方式形成。藉由擋板50a與擋板50b在本體容器1之高度方向隔開規定之間隔而交替突出的方式設置，則前端部分51a、51b隔開間隔重複。亦即，擋板50a、50b為前端部分51a、51b在本體容器1之高度方向隔開間隔重疊而形成迷宮構造。處理室4內之氣體通過擋板50a、50b之間之彎曲的排氣路徑，流入擋板50a、50b之下部之排氣區域54而從排氣口30進行排氣。擋板50a、50b之間隔設為50~100mm為較佳。又，擋板50a、50b之前端部分51a、51b之重複之寬度設為20~100mm為較佳。A plurality of baffles 50 are provided on the upstream side of the exhaust port 30 with respect to the flow of exhaust gas to the exhaust port 30 . In the present embodiment, two baffles 50a, 50b are provided between the inner wall of the processing chamber 4 (the inner portion of the side wall 4a ) on the upstream side of the exhaust port 30 and the mounting table 23 . The baffle 50 is formed of a conductive material such as metal, and is formed as a plate. With respect to the height direction of the main container 1 , the baffles 50 are provided so as to protrude alternately from the side surfaces of the mounting table 23 and the side surfaces of the processing chamber 4 . In this embodiment, the baffle 50a is provided on the upper side so as to protrude from the side surface of the mounting table 23, and the baffle 50b is provided on the lower side of the baffle 50a at a predetermined interval so as to protrude from the side surface (side wall 4a) of the processing chamber 4. mode settings. The sum of the lengths from the baffle plate 50a and the baffle plate 50B to their protruding front end portions 51a, 51b is formed to be longer than the width between the inner wall of the processing chamber 4 and the mounting table 23 . The baffles 50a and 50b are provided so as to protrude alternately at predetermined intervals in the height direction of the main body container 1, so that the front end portions 51a, 51b overlap at intervals. That is, the baffles 50a, 50b form a labyrinth structure in which the front end portions 51a, 51b overlap at intervals in the height direction of the main body container 1 . The gas in the processing chamber 4 passes through the curved exhaust path between the baffles 50a, 50b, flows into the exhaust area 54 under the baffles 50a, 50b, and is exhausted from the exhaust port 30. The distance between the baffles 50a and 50b is preferably 50-100mm. Also, it is preferable that the overlapping width of the front end portions 51a, 51b of the baffles 50a, 50b be 20-100 mm.

各擋板50分別連接於接地電位。例如本體容器1藉由接地線1a被接地，因此，處理室4之側壁4a及底壁4b成為接地電位。擋板50b係由金屬等之導電性材料形成，且電連接於設為接地電位的處理室4之側壁4a。擋板50a係由金屬等之導電性材料形成，且經由披覆載置台23之側面的導電性之覆蓋部55電連接於設為接地電位的處理室4之底壁4b。又，各擋板50分別設置接地線，藉由接地線連接於接地電位亦可。Each baffle plate 50 is connected to the ground potential, respectively. For example, the main body container 1 is grounded by the ground line 1a, and therefore, the side wall 4a and the bottom wall 4b of the processing chamber 4 become the ground potential. The baffle plate 50b is formed of a conductive material such as metal, and is electrically connected to the side wall 4a of the processing chamber 4 which is set to a ground potential. The baffle plate 50a is formed of a conductive material such as metal, and is electrically connected to the bottom wall 4b of the processing chamber 4 set to the ground potential through a conductive covering portion 55 covering the side surface of the mounting table 23 . In addition, each baffle plate 50 is provided with a ground wire, and may be connected to the ground potential via the ground wire.

圖2A係表示實施形態的處理室內之構成之一例之水平剖面圖。圖2A係表示上方觀察處理室4內之載置台23附近的剖面圖。於處理室4內，載置台23配置於中央載置台23。為了載置矩形狀之基板G，載置台23之載置面23a形成為矩形狀。圖2A之例中，於處理室4之四個角分別設置有排氣口30。又，排氣口30之數或位置可以依據電漿處理裝置10之大小適當地變更。圖2B係表示實施形態的處理室內之構成之另一例之水平剖面圖。圖2B中，於矩形狀之載置台23之各邊之兩端附近分別設置有排氣口30。Fig. 2A is a horizontal cross-sectional view showing an example of the configuration of the processing chamber of the embodiment. FIG. 2A is a sectional view showing the vicinity of the mounting table 23 in the processing chamber 4 viewed from above. In the processing chamber 4 , the mounting table 23 is disposed on the central mounting table 23 . In order to mount the rectangular board|substrate G, the mounting surface 23a of the mounting table 23 is formed in rectangular shape. In the example of FIG. 2A , exhaust ports 30 are respectively provided at four corners of the processing chamber 4 . Also, the number or position of the exhaust ports 30 can be appropriately changed according to the size of the plasma processing device 10 . Fig. 2B is a horizontal cross-sectional view showing another example of the configuration of the processing chamber of the embodiment. In FIG. 2B , exhaust ports 30 are respectively provided near both ends of each side of the rectangular mounting table 23 .

本實施形態中，擋板50a設置於載置台23之側面之全周。擋板50b設置於與載置台23之側面對置的處理室4之側壁4a之全周。擋板50a、50b之前端部分51a、51b重複。換言之，從載置台23之側面突出的擋板50a之前端部分51a與從處理室4之側面突出的擋板50b之前端部分51b彼此比起對方之前端部分更延伸，從上方觀察載置台23附近的情況下具有重複的區域。圖2A及圖2B中，擋板50b之前端部分51b側之與擋板50a重複的區域之圖案以虛線表示。又，擋板50a、50b未必設置於載置台23之周圍之全周，例如為了確保其他元件之配置區域，而在載置台23之周圍之一部分不配置亦可。In this embodiment, the baffle plate 50a is provided on the entire circumference of the side surface of the mounting table 23 . The baffle plate 50b is provided on the entire circumference of the side wall 4a of the processing chamber 4 facing the side surface of the mounting table 23 . The front end portions 51a, 51b of the baffles 50a, 50b repeat. In other words, the front end portion 51a of the baffle plate 50a protruding from the side of the mounting table 23 and the front end portion 51b of the baffle plate 50b protruding from the side surface of the processing chamber 4 are longer than each other, and the vicinity of the mounting table 23 is viewed from above. The case has duplicate regions. In FIGS. 2A and 2B , the pattern of the region overlapping with the baffle 50 a on the side of the front end portion 51 b of the baffle 50 b is indicated by dotted lines. In addition, the baffles 50a and 50b are not necessarily provided on the entire periphery of the mounting table 23, and may not be provided on a part of the periphery of the mounting table 23, for example, in order to ensure a placement area for other components.

回至圖1。實施形態的電漿處理裝置10具有由微處理器(電腦)形成的控制部100、使用者介面101、及記憶部102。控制部100對電漿處理裝置10之各構成部例如閥、高頻電源15、高頻電源27、真空泵33等傳送指令，對彼等進行控制。又，使用者介面101具有由操作員進行電漿處理裝置10之管理之指令之輸入等之輸入操作的鍵盤，或使電漿處理裝置10之運轉狀況可視化而予以顯示的顯示器等。使用者介面101連接於控制部100。於記憶部102記憶有：在控制部100之控制下實現電漿處理裝置10所執行的各種處理之控制程式，或對應於處理條件而於電漿處理裝置10之各構成部執行處理之程式亦即處理配方。記憶部102連接於控制部100。處理配方記憶於記憶部102之中之記憶媒體。記憶媒體可以是內建於電腦的硬碟或半導體記憶體，亦可以是CDROM、DVD、快閃記憶體等之可攜性者亦可。又，從其他裝置例如透過專用線路適當地傳送配方亦可。必要時，按照來自使用者介面101之指示等從記憶部102呼叫任意之處理配方使控制部100執行，在控制部100之控制下進行電漿處理裝置10之期待之處理。Back to Figure 1. The plasma processing apparatus 10 of the embodiment has a control unit 100 formed of a microprocessor (computer), a user interface 101, and a memory unit 102 . The control unit 100 transmits commands to various components of the plasma processing apparatus 10 such as the valves, the high-frequency power supply 15 , the high-frequency power supply 27 , and the vacuum pump 33 to control them. In addition, the user interface 101 has a keyboard for an operator to perform input operations such as inputting commands to manage the plasma processing apparatus 10, a display for visualizing and displaying the operation status of the plasma processing apparatus 10, and the like. The user interface 101 is connected to the control unit 100 . Stored in the memory unit 102 are control programs for realizing various processes performed by the plasma processing apparatus 10 under the control of the control unit 100, or programs for executing processes in each component of the plasma processing apparatus 10 according to processing conditions. That is, the processing recipe. The memory unit 102 is connected to the control unit 100 . The processing recipe is stored in the memory medium in the memory unit 102 . The memory medium may be a hard disk or a semiconductor memory built into the computer, and may also be a portable CDROM, DVD, or flash memory. In addition, the recipe may be appropriately transmitted from another device, for example, via a dedicated line. When necessary, an arbitrary treatment recipe is called from the memory unit 102 to be executed by the control unit 100 according to an instruction from the user interface 101 , and the desired treatment of the plasma processing apparatus 10 is performed under the control of the control unit 100 .

接著，說明使用以上構成的電漿處理裝置10對基板G進行電漿處理例如電漿蝕刻或電漿灰化時的處理動作。Next, the processing operation when plasma processing such as plasma etching or plasma ashing is performed on the substrate G using the plasma processing apparatus 10 configured as above will be described.

首先，電漿處理裝置10將閘閥29設為開放之狀態。基板G藉由搬送機構(未圖示)從搬出入口29a被搬入處理室4內，載置於載置台23之載置面23a。電漿處理裝置10藉由靜電吸盤(未圖示)將基板G固定於載置台23上。接著，電漿處理裝置10從處理氣體供給系統20經由噴淋筐體11之氣體吐出孔12a將處理氣體供給至處理室4內。又，電漿處理裝置10藉由自動壓力控制閥(APC)32對壓力進行控制，並且從排氣口30經由排氣配管31藉由真空泵33對處理室4內實施真空排氣，藉此，將處理室內例如維持於0.66~26.6Pa左右之壓力氛圍。First, the plasma processing apparatus 10 sets the gate valve 29 in an open state. The substrate G is carried into the processing chamber 4 from the carry-out port 29 a by a transfer mechanism (not shown), and is mounted on the mounting surface 23 a of the mounting table 23 . The plasma processing apparatus 10 fixes the substrate G on the mounting table 23 by an electrostatic chuck (not shown). Next, the plasma processing apparatus 10 supplies the processing gas from the processing gas supply system 20 into the processing chamber 4 through the gas discharge hole 12 a of the shower housing 11 . Moreover, the plasma processing apparatus 10 controls the pressure by an automatic pressure control valve (APC) 32, and implements vacuum exhaust in the processing chamber 4 through the exhaust port 30 through the exhaust pipe 31 by the vacuum pump 33, thereby, Maintain the pressure atmosphere in the processing chamber at about 0.66-26.6 Pa, for example.

又，此時，為了迴避基板G之溫度上升或溫度變化，電漿處理裝置10經由He氣體流路28對基板G之背面側之冷卻空間供給作為熱傳導用氣體之He氣體。At this time, in order to avoid temperature rise or temperature change of the substrate G, the plasma processing apparatus 10 supplies He gas as a heat transfer gas to the cooling space on the back side of the substrate G through the He gas flow path 28 .

接著，電漿處理裝置10從高頻電源15例如將13.56MHz之高頻施加於高頻天線13，藉此，經由介質壁2而在處理室4內形成均勻的感應電場。藉由如此般形成的感應電場，於處理室4內使處理氣體電漿化而生成高密度之感應耦合電漿。藉由該電漿對基板G進行電漿處理，例如對基板G之規定之膜進行電漿蝕刻或電漿灰化。與此同時，電漿處理裝置10從高頻電源27將作為高頻偏壓的例如頻率為6MHz之高頻電力施加於載置台23，使處理室4內生成的電漿中之離子有效地被引入至基板G。Next, the plasma processing apparatus 10 applies a high frequency of, for example, 13.56 MHz to the high frequency antenna 13 from the high frequency power supply 15 , thereby forming a uniform induced electric field in the processing chamber 4 through the dielectric wall 2 . By the induced electric field thus formed, the processing gas is plasmatized in the processing chamber 4 to generate high-density inductively coupled plasma. Plasma processing is performed on the substrate G by this plasma, for example, plasma etching or plasma ashing is performed on a predetermined film of the substrate G. At the same time, the plasma processing apparatus 10 applies high-frequency power with a frequency of, for example, 6 MHz as a high-frequency bias voltage to the mounting table 23 from the high-frequency power supply 27, so that the ions in the plasma generated in the processing chamber 4 are effectively absorbed. Introduced to substrate G.

供給至處理室4內的處理氣體電漿化而被供作為電漿處理之後，藉由真空泵33進行吸引，藉此而經由排氣區域54到達排氣口30，從排氣口30經由排氣配管31進行排氣。圖3係表示實施形態的往排氣口的排氣之流動之一例之圖。圖3中以實線之箭頭示意表示排氣之流動之一例。電漿化的氣體通過擋板50a、50b之間之彎曲成為S字狀的排氣路徑流入排氣區域54。排氣區域54形成於載置台23之周圍全周，通往各排氣口30。流入排氣區域54的氣體，到達排氣口30，從排氣口30經由排氣配管31進行排氣。After the processing gas supplied into the processing chamber 4 is plasmaized and used as plasma processing, it is sucked by the vacuum pump 33, thereby reaching the exhaust port 30 through the exhaust region 54, and from the exhaust port 30 through the exhaust port 30. The piping 31 is exhausted. Fig. 3 is a diagram showing an example of the flow of exhaust gas to the exhaust port according to the embodiment. An example of the flow of exhaust gas is schematically shown by solid arrows in FIG. 3 . The plasmaized gas flows into the exhaust region 54 through the S-shaped exhaust path between the baffles 50a and 50b. The exhaust area 54 is formed around the entire circumference of the mounting table 23 and leads to each exhaust port 30 . The gas flowing into the exhaust area 54 reaches the exhaust port 30 and is exhausted from the exhaust port 30 through the exhaust pipe 31 .

本實施形態的電漿處理裝置10中，將擋板50a、50b設置於載置台23之周圍之全周。藉此，電漿處理裝置10可以縮小排氣特性之不均勻等。例如圖2A所示，電漿處理裝置10在處理室4之四個角設置有排氣口30之情況下，處理室4之四個角附近之排氣特性變高。但是，電漿處理裝置10中，設置擋板50a、50b使排氣電阻增加，而成為從載置台23之周圍整體進行排氣。藉此，電漿處理裝置10中，可以縮小載置台23之周圍之排氣特性之不均勻等。亦即，電漿處理裝置10藉由將擋板50a、50b設置於載置台23之周圍之全周，可以使載置台23之周圍之排氣特性均勻化。In the plasma processing apparatus 10 of the present embodiment, the baffles 50 a and 50 b are provided on the entire periphery of the mounting table 23 . Thereby, the plasma processing apparatus 10 can reduce the non-uniformity of exhaust characteristics and the like. For example, as shown in FIG. 2A , when the plasma processing apparatus 10 is provided with exhaust ports 30 at the four corners of the processing chamber 4 , the exhaust characteristics near the four corners of the processing chamber 4 become high. However, in the plasma processing apparatus 10, the baffles 50a, 50b are provided to increase the exhaust resistance, and exhaust is exhausted from the entire periphery of the mounting table 23. Thereby, in the plasma processing apparatus 10, the non-uniformity etc. of the exhaust characteristic around the mounting table 23 can be reduced. That is, in the plasma processing apparatus 10 , by providing the baffles 50 a and 50 b around the entire circumference of the mounting table 23 , the exhaust characteristics around the mounting table 23 can be made uniform.

又，本實施形態的電漿處理裝置10，係在排氣口30之更上游側，以前端部分51a、51b隔開間隔而重複的方式設置有擋板50a、50b。藉此，電漿化的氣體通過擋板50a、50b之間時，與擋板50a、50b接觸而失活。藉此，電漿化的氣體不直接流入排氣口30，因此於排氣口30或排氣部40中，可以抑制不穩定的放電之產生。圖4係表示實施形態的電漿化的氣體之流動之一例之圖。供給置處理室4內的處理氣體，係在噴淋筐體11與載置台23之間之處理區域被電漿化。該電漿化的氣體藉由真空泵33進行吸引，經由排氣區域54被吸引至排氣口30，與擋板50a、50b接觸而失活，因此不會直接到達排氣口30。Further, in the plasma processing apparatus 10 of this embodiment, the baffles 50a, 50b are provided on the upstream side of the exhaust port 30 so that the front end portions 51a, 51b are repeated at intervals. Thereby, when the plasmaized gas passes between the baffles 50a, 50b, it comes into contact with the baffles 50a, 50b and is deactivated. As a result, the plasmaized gas does not directly flow into the exhaust port 30 , so that unstable discharge can be suppressed from occurring in the exhaust port 30 or the exhaust portion 40 . Fig. 4 is a diagram showing an example of the flow of plasmaized gas in the embodiment. The processing gas supplied into the processing chamber 4 is plasmaized in the processing region between the shower housing 11 and the mounting table 23 . The plasmaized gas is sucked by the vacuum pump 33 , sucked to the exhaust port 30 through the exhaust region 54 , and deactivated by contacting the baffles 50 a and 50 b , so that it does not directly reach the exhaust port 30 .

於此，作為比較例而說明無擋板50a、50b之情況下之電漿之流動之一例。圖5係表示比較例的電漿化的氣體之流動之一例之圖。比較例中，未設置擋板50a、50b。電漿化的氣體藉由真空泵33進行吸引，從排氣口30流入排氣部40。該情況下，於排氣口30或排氣部40中，存在產生不穩定的放電之情況。Here, an example of the flow of plasma without the baffles 50a and 50b will be described as a comparative example. Fig. 5 is a diagram showing an example of the flow of plasmaized gas in a comparative example. In the comparative example, the baffles 50a and 50b were not provided. The plasmaized gas is sucked by the vacuum pump 33 and flows into the exhaust part 40 from the exhaust port 30 . In this case, unstable discharge may occur in the exhaust port 30 or the exhaust portion 40 .

另一方面，如圖4所示，本實施形態的電漿處理裝置10，電漿化的氣體失活而流入排氣口30，因此於排氣口30或排氣部40中可以抑制不穩定的放電之產生。On the other hand, as shown in FIG. 4, in the plasma processing apparatus 10 of the present embodiment, the gas deactivated by plasma flows into the exhaust port 30, so that the unstable gas can be suppressed in the exhaust port 30 or the exhaust part 40. generation of discharge.

又，電漿處理裝置10中，擋板50a、50b之前端部分51a、51b以隔開間隔而重複的方式配置。藉此，電漿處理裝置10可以抑制從排氣部40反衝的微粒飛出至擋板50a、50b之上部。圖6係表示實施形態的來自排氣部之微粒之反衝之一例之圖。圖6中以實線之箭頭示意表示微粒之反衝之一例。排氣部40中，微粒60有可能因為真空泵33等而朝排氣口30側反衝之情況。但是，電漿處理裝置10中，擋板50a、50b之前端部分51a、51b被重疊，因此可以抑制排氣部40中反衝的微粒60跳出至擋板50a、50b之上部。特別是，本實施形態的電漿處理裝置10中，將擋板50a、50b之中最上部之擋板50a以從載置台23之側面突出的方式設置。藉此，處理室4之側面側成為開口，擋板50a披覆載置台23側，因此即使反衝的微粒60通過擋板50a、50b之間隙之情況下，亦可以抑制微粒60飛出至載置台23側。Moreover, in the plasma processing apparatus 10, front-end|tip part 51a, 51b of baffle plate 50a, 50b is arrange|positioned so that it may repeat at intervals. Thereby, the plasma processing apparatus 10 can suppress the particles recoiled from the exhaust part 40 from flying out to the upper parts of the baffles 50a, 50b. Fig. 6 is a diagram showing an example of recoil of particles from the exhaust part in the embodiment. An example of recoil of particles is schematically shown by solid arrows in FIG. 6 . In the exhaust part 40, the particles 60 may recoil toward the exhaust port 30 side by the vacuum pump 33 or the like. However, in the plasma processing apparatus 10, the front ends 51a, 51b of the baffles 50a, 50b are overlapped, so that the particles 60 recoiled in the exhaust part 40 can be suppressed from jumping out to the top of the baffles 50a, 50b. In particular, in the plasma processing apparatus 10 of the present embodiment, the uppermost baffle 50 a among the baffles 50 a and 50 b is installed so as to protrude from the side surface of the mounting table 23 . Thereby, the side surface of the processing chamber 4 becomes an opening, and the baffle 50a covers the side of the mounting table 23. Therefore, even when the recoiled particles 60 pass through the gap between the baffles 50a and 50b, the flying of the particles 60 to the carrier can be suppressed. Set platform 23 sides.

但是，電漿處理裝置10中，在基板G之附近生成高密度之電漿，因此，處理室4之高度設計為較低。例如電漿處理裝置10中，載置台23與噴淋筐體11之距離成為300mm以下。藉此，電漿處理裝置10中，作為對置電極而發揮功能的處理室4之內壁(側壁4a之內側部分)之面積變小。又，電漿處理裝置10中，隨著可以處理的基板G之尺寸變為越大，相對於載置基板G的載置台23之面積，處理室4之內壁(側壁4a之內側部分)之面積之比率降低。另一方面，電漿處理裝置10中，隨著基板G越大型化，對載置台23需要施加高電力之高頻電力。例如電漿處理裝置10中，若基板G之尺寸為第8世代之尺寸(2160mm×2460mm)以上之尺寸時，需要對載置台23施加更高電力之高頻電力。結果，電漿處理裝置10中，隨著處理的基板G之尺寸變為越大，相對於對置電極的返回電流密度增加，成為容易產生電弧放電等之電性不穩定。However, in the plasma processing apparatus 10, high-density plasma is generated near the substrate G, so the height of the processing chamber 4 is designed to be low. For example, in the plasma processing apparatus 10, the distance between the mounting table 23 and the shower housing 11 is 300 mm or less. Thereby, in the plasma processing apparatus 10, the area of the inner wall of the processing chamber 4 (inner part of the side wall 4a) which functions as a counter electrode becomes small. In addition, in the plasma processing apparatus 10, as the size of the substrate G that can be processed becomes larger, the area of the inner wall of the processing chamber 4 (the inner portion of the side wall 4a) relative to the area of the stage 23 on which the substrate G is placed The area ratio is reduced. On the other hand, in the plasma processing apparatus 10, as the substrate G increases in size, it is necessary to apply high-frequency high-frequency power to the mounting table 23 . For example, in the plasma processing apparatus 10, if the size of the substrate G is larger than the size of the 8th generation (2160mm×2460mm), it is necessary to apply high-frequency power with higher power to the stage 23 . As a result, in the plasma processing apparatus 10, as the size of the substrate G to be processed becomes larger, the return current density to the counter electrode increases, and electrical instability such as arc discharge tends to occur.

於此，本實施形態的電漿處理裝置10中設置有設為接地電位的擋板50a、50b。藉由擋板50a、50b設為接地電位，相對於施加有高頻偏壓的載置台23作為對置電極而發揮功能。亦即，電漿處理裝置10中，藉由擋板50a、50b之設置來擴大對置電極之面積。藉此，電漿處理裝置10中，伴隨著基板G之大型化致使載置台23大型化之情況下，亦可以確保電氣穩定性，可以抑制不穩定的放電。Here, in the plasma processing apparatus 10 of this embodiment, the baffles 50a and 50b set to the ground potential are provided. By setting the baffles 50a and 50b to the ground potential, it functions as a counter electrode with respect to the mounting table 23 to which a high-frequency bias is applied. That is, in the plasma processing apparatus 10, the area of the opposing electrode is enlarged by the provision of the baffles 50a and 50b. Thereby, in the plasma processing apparatus 10, even when the mounting table 23 increases in size accompanying the increase in the size of the substrate G, electrical stability can be ensured, and unstable discharge can be suppressed.

又，本實施形態中示出使最上部之擋板50a從載置台23之側面側突出的方式而設置之情況，但不限定於此。例如使最上部之擋板50a從處理室4之側面側突出的方式而設置亦可。圖7係表示實施形態的電漿處理裝置之另一構成之一例之圖。圖7中以實線之箭頭示意表示排氣之流動之一例。圖7中，上側之擋板50a以從處理室4之側壁4a突出的方式設置，下側之擋板50b以從載置台23之側面突出的方式設置。擋板50a、50b各自之前端部分51a、51b係以隔開間隔重複的方式配置。圖7之情況下，最上部之擋板50a，在載置台23側成為開口。藉此，排氣路徑不會大幅屈曲，排氣可以順暢地流入擋板50a、50b之間，因此排氣特性提升。於此，如圖3所示，以使最上部之擋板50a從載置台23之側面側突出的方式設置之情況下，排氣多數流入擋板50a之上部，因此藉由處理氣體而在擋板50a之上表面堆積較多副生成物等。另一方面，如圖7所示，使最上部之擋板50a從處理室4之側面側突出的方式設置之情況下，流入擋板50a之上部的排氣變少，排氣順暢地流入，因此可以減少副生成物等之堆積。Moreover, in this embodiment, although the case where the uppermost shutter 50a was installed so that it may protrude from the side surface side of the mounting table 23 was shown, it is not limited to this. For example, the uppermost baffle plate 50 a may be installed so that it protrudes from the side surface of the processing chamber 4 . Fig. 7 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. An example of the flow of exhaust gas is schematically shown by solid arrows in FIG. 7 . In FIG. 7 , the upper baffle 50 a is provided so as to protrude from the side wall 4 a of the processing chamber 4 , and the lower baffle 50 b is provided so as to protrude from the side surface of the mounting table 23 . The respective front end portions 51a, 51b of the baffles 50a, 50b are arranged so as to be repeated at intervals. In the case of FIG. 7 , the uppermost baffle 50 a is opened on the side of the mounting table 23 . Thereby, the exhaust path does not bend greatly, and the exhaust can flow smoothly between the baffles 50a, 50b, so that the exhaust characteristics are improved. Here, as shown in FIG. 3 , when the uppermost baffle plate 50a is installed so that it protrudes from the side surface of the mounting table 23, most of the exhaust gas flows into the upper part of the baffle plate 50a, and therefore the process gas is blown in the baffle plate 50a. Many by-products and the like are deposited on the upper surface of the plate 50a. On the other hand, as shown in FIG. 7, when the uppermost baffle plate 50a is installed so as to protrude from the side surface of the processing chamber 4, the exhaust gas flowing into the upper part of the baffle plate 50a is reduced, and the exhaust gas flows in smoothly. Therefore, the accumulation of by-products and the like can be reduced.

又，覆蓋部55以直至上端為止披覆載置台23之側面的方式形成亦可。圖8係表示實施形態的電漿處理裝置之另一構成之一例之圖。覆蓋部55以直至上端為止披覆載置台23之側面的方式形成。覆蓋部55電連接於設為接地電位的處理室4之底壁4b。因此覆蓋部55作為相對於施加有高頻偏壓的載置台23之對置電極而發揮功能。亦即，電漿處理裝置10中，藉由覆蓋部55以直至上端為止披覆載置台23之側面的方式形成，而擴大對置電極之面積。藉此，電漿處理裝置10中，伴隨基板G之大型化致使載置台23大型化之情況下，亦可以確保電氣穩定性，可以抑制不穩定的放電。Moreover, the covering part 55 may be formed so that the side surface of the mounting table 23 may be covered up to an upper end. Fig. 8 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. The covering portion 55 is formed to cover the side surface of the mounting table 23 up to the upper end. The covering part 55 is electrically connected to the bottom wall 4b of the processing chamber 4 which is set to the ground potential. Therefore, the cover portion 55 functions as an opposing electrode to the mounting table 23 to which a high-frequency bias is applied. That is, in the plasma processing apparatus 10 , the area of the opposing electrode is enlarged by forming the covering portion 55 so as to cover the side surface of the mounting table 23 up to the upper end. Thereby, in the plasma processing apparatus 10, even when the mounting table 23 increases in size accompanying the increase in the size of the substrate G, electrical stability can be ensured, and unstable discharge can be suppressed.

又，本實施形態中示出在排氣口30之更上游側設置2個擋板50之情況，但不限定於此。擋板50之個數可以是2個以上或任一。圖9係表示實施形態的電漿處理裝置之另一構成之一例之圖。示出在排氣口30之更上游側設置3個擋板50a~50c之情況。圖10係表示實施形態的電漿處理裝置之另一構成之一例之圖。示出在排氣口30之更上游側設置4個擋板50a~50d之情況。圖9及圖10中亦示出最上部之擋板50a從載置台23之側面側突出的方式設置之情況，但不限定於此。最上部之擋板50a從處理室4之側面側突出的方式而設置亦可。Moreover, in this embodiment, although the case where the two baffles 50 were provided on the upstream side of the exhaust port 30 was shown, it is not limited to this. The number of baffles 50 can be more than 2 or arbitrary. Fig. 9 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. The case where three baffles 50a-50c are provided on the upstream side of the exhaust port 30 is shown. Fig. 10 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. The case where four baffles 50a-50d are provided on the upstream side of the exhaust port 30 is shown. 9 and 10 also show the case where the uppermost baffle plate 50a is installed so as to protrude from the side surface of the mounting table 23, but the present invention is not limited thereto. The uppermost baffle plate 50 a may be installed so as to protrude from the side surface of the processing chamber 4 .

又，本實施形態中示出載置台23之用於載置基板G的載置面23a為平坦的情況，但不限定於此。載置台23沿著載置面23a之外緣設置突出的突出部80亦可。圖11係表示實施形態的電漿處理裝置之另一構成之一例之圖。電漿處理裝置10中，沿著載置面23a之外緣設置有突出部80。突出部80係以規定之高度包圍基板G之外周而形成。電漿處理裝置10中，在對載置於載置面23a的基板G進行電漿處理之情況下，於基板G之周邊區域，電漿處理之處理特性會有變化之情況。例如電漿處理裝置10中，在對載置於載置面23a的基板G進行電漿蝕刻之情況下，相對於基板G之中心區域，基板G之周邊區域中未反應之電漿氣體之比例變多。因此基於負載效應(loading effect)，基板G之周邊區域中的蝕刻速率變高，基板G之面內之蝕刻之均勻性降低。於此，電漿處理裝置10中，沿著載置面23a之外緣設置突出部80，阻礙電漿化的氣體往外側之流動而降低周邊區域之氣體之流速，抑制因為負載效應而在基板G之周邊區域之蝕刻速率變高之現象。突出部80之寬度及高度，可以對應於負載效應引起的基板G之周邊區域之蝕刻速率之狀況適當地決定。為了使超過突出部80而排出的氣體因為擋板50而失活，較好是構成為擋板50a之基端至前端部分51a之長度比突出部80之上端至擋板50a之高度更長。Moreover, in this embodiment, although the mounting surface 23a for mounting the board|substrate G of the mounting base 23 was shown as flat, it does not restrict to this. The mounting table 23 may be provided with a protruding protrusion 80 along the outer edge of the mounting surface 23a. Fig. 11 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. In the plasma processing apparatus 10, the protruding part 80 is provided along the outer edge of the mounting surface 23a. The protruding portion 80 is formed to surround the outer periphery of the substrate G at a predetermined height. In the plasma processing apparatus 10, when plasma processing is performed on the substrate G placed on the mounting surface 23a, the processing characteristics of the plasma processing may vary in the peripheral region of the substrate G. For example, in the plasma processing apparatus 10, when plasma etching is performed on the substrate G placed on the mounting surface 23a, the ratio of the unreacted plasma gas in the peripheral region of the substrate G to the central region of the substrate G is Become more. Therefore, due to the loading effect, the etching rate in the peripheral region of the substrate G increases, and the uniformity of etching in the surface of the substrate G decreases. Here, in the plasma processing apparatus 10, the protruding portion 80 is provided along the outer edge of the mounting surface 23a, which hinders the flow of the plasmaized gas to the outside and reduces the flow velocity of the gas in the surrounding area, and suppresses the flow of the gas on the substrate due to the loading effect. The phenomenon that the etching rate of the peripheral region of G becomes higher. The width and height of the protruding portion 80 can be appropriately determined according to the etching rate of the peripheral region of the substrate G due to the load effect. In order to inactivate the gas discharged beyond the protrusion 80 by the baffle 50, it is preferable to configure the length from the base end of the baffle 50a to the front end 51a to be longer than the height from the upper end of the protrusion 80 to the baffle 50a.

圖12係表示實施形態的蝕刻之變化之一例之圖。於圖12示出從基板G之中心起每一位置的蝕刻速率(E/R)之變化。蝕刻速率係以基板G之規定之位置之蝕刻速率作為基準而予以規格化表示。圖12中未設置擋板50之情況下之蝕刻速率之變化以「無擋板」表示。又，設置有擋板50a、50b之情況下之蝕刻速率之變化以「有擋板」作為表示。又，設置有擋板50a、50b與突出部80之情況下之蝕刻速率之變化以「有擋板與突出部」予以表示。突出部80設為寬度30mm。如圖12所示，和未設置擋板50之情況比較，設置有擋板50a、50b之情況下，基板G之周邊之蝕刻速率變低，基板G之面內之蝕刻之均勻性提升。又，設置有擋板50a、50b與突出部80之情況下，基板G之周邊之蝕刻速率進一步變低，基板G之面內之蝕刻之均勻性進一步提升。如此般，電漿處理裝置10中，藉由設置擋板50，使基板G之面內之電漿處理之處理特性之均勻性提升。又，電漿處理裝置10中，藉由設置擋板50與突出部80，使基板G之面內之電漿處理之處理特性之均勻性進一步提升。Fig. 12 is a diagram showing an example of changes in etching in the embodiment. The variation of the etching rate (E/R) at each position from the center of the substrate G is shown in FIG. 12 . The etching rate is expressed in a normalized manner based on the etching rate at a predetermined position of the substrate G as a reference. In FIG. 12, the change of the etching rate in the case where no baffle 50 is provided is represented by "no baffle". In addition, the change of the etching rate in the case where the baffles 50a and 50b are provided is represented by "with baffles". In addition, the change of the etching rate in the case where the baffles 50a, 50b and the protruding part 80 are provided is represented by "there is a baffle and a protruding part". The protruding portion 80 was set to have a width of 30 mm. As shown in FIG. 12 , compared with the case where the baffle 50 is not provided, when the baffles 50 a and 50 b are provided, the etching rate around the substrate G is lowered, and the uniformity of etching in the surface of the substrate G is improved. In addition, when the baffles 50a, 50b and the protruding portion 80 are provided, the etching rate around the substrate G is further reduced, and the uniformity of etching in the surface of the substrate G is further improved. In this way, in the plasma processing apparatus 10, by providing the baffle 50, the uniformity of the processing characteristics of the plasma processing in the surface of the substrate G is improved. In addition, in the plasma processing apparatus 10, by providing the baffle plate 50 and the protruding portion 80, the uniformity of the processing characteristics of the plasma processing in the surface of the substrate G is further improved.

又，擋板50可以在上表面設置有熔射膜。圖13係表示實施形態的電漿處理裝置之另一構成之一例之圖。電漿處理裝置10中，從載置台23之側面側與處理室4之側面側交替設置2個擋板50a、50b。擋板50a、50b係於上表面設置有氧化鋁(Al2 O3 )或氧化釔(Y2 O3 )等之熔射膜90。熔射膜90之表面較粗，因此副生成物等容易附著。因此，電漿處理裝置10中，藉由在擋板50a、50b設置熔射膜90，電漿處理中產生之副生成物等可以被熔射膜90捕獲。另一方面，未設置熔射膜90之情況下，亦可以藉由對擋板50a、50b之表面實施噴砂處理增大表面粗度，使副生成物附著。又，熔射膜90亦有為了保護擋板免受腐蝕性氣體而設置之情況。該情況下，熔射膜90設置於擋板整面。In addition, the baffle 50 may be provided with a spray film on the upper surface. Fig. 13 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. In the plasma processing apparatus 10, two baffles 50a, 50b are alternately provided from the side of the mounting table 23 and the side of the processing chamber 4. The baffles 50a, 50b are provided with a fusion film 90 of aluminum oxide (Al 2 O 3 ) or yttrium oxide (Y 2 O 3 ) on the upper surface. Since the surface of the spray film 90 is rough, by-products and the like are easily attached. Therefore, in the plasma processing apparatus 10, by providing the fusing film 90 on the baffles 50a and 50b, by-products and the like generated during plasma processing can be captured by the fusing film 90. On the other hand, when the spray film 90 is not provided, the surface roughness of the baffles 50a and 50b can be increased by sandblasting to allow by-products to adhere. In addition, the spray film 90 may be provided to protect the baffle from corrosive gas. In this case, the thermal spray film 90 is provided on the entire surface of the baffle.

如以上般，本實施形態的電漿處理裝置10具有處理室4、排氣口30、及複數個擋板50。處理室4之內部設置有用於載置基板G的載置台23，且實施對基板G之電漿處理。排氣口30設置於載置台23之周圍的比起載置台23之用於載置基板G的載置面23a低的位置，對處理室4內實施排氣。複數個擋板50係由導電性材料形成，分別連接於接地電位，且相對於往排氣口30的排氣之流動設置於排氣口30之更上游側。複數個擋板50從載置台23之側面側與處理室4之側面側交替突出，該突出的前端部分隔開間隔重複。藉此，電漿處理裝置10中，電漿化的氣體流入排氣口30時能夠藉由擋板50而失活，可以抑制電漿化的氣體流入排氣口30，因此可以抑制不穩定的放電。又，電漿處理裝置10中，藉由設置擋板50a、50b，可以擴大對置電極之面積，因此可以確保電氣穩定性，可以抑制不穩定的放電。As described above, the plasma processing apparatus 10 of this embodiment has the processing chamber 4 , the exhaust port 30 , and a plurality of baffles 50 . The mounting table 23 for mounting the substrate G is provided inside the processing chamber 4, and the plasma processing of the substrate G is performed. The exhaust port 30 is provided at a position lower than the mounting surface 23 a of the mounting table 23 on which the substrate G is mounted on the periphery of the mounting table 23 , and exhausts the inside of the processing chamber 4 . The plurality of baffles 50 are formed of a conductive material, are respectively connected to the ground potential, and are provided on the upstream side of the exhaust port 30 with respect to the flow of the exhaust gas to the exhaust port 30 . A plurality of baffles 50 protrude alternately from the side surfaces of the mounting table 23 and the side surfaces of the processing chamber 4 , and the protruding front ends are repeated at intervals. Thereby, in the plasma processing apparatus 10, when the plasmaized gas flows into the exhaust port 30, it can be deactivated by the baffle plate 50, and the plasmaized gas can be suppressed from flowing into the exhaust port 30, so that unstable discharge. In addition, in the plasma processing apparatus 10, by providing the baffles 50a and 50b, the area of the counter electrode can be enlarged, so electrical stability can be ensured, and unstable discharge can be suppressed.

又，電漿處理裝置10中，複數個擋板50之中最上部之擋板50a係從載置台23之側面側突出。藉此，電漿處理裝置10中，可以抑制從排氣部40反衝的微粒60之往載置台23側飛翔。In addition, in the plasma processing apparatus 10 , the uppermost baffle 50 a among the plurality of baffles 50 protrudes from the side surface of the mounting table 23 . Thereby, in the plasma processing apparatus 10 , it is possible to suppress flying of the particles 60 recoiled from the exhaust unit 40 to the mounting table 23 side.

又，電漿處理裝置10中，複數個擋板50之中最上部之擋板50a係從處理室4之側面側突出。藉此，電漿處理裝置10中，載置台23側成為開口，排氣路徑不致於大幅屈曲，排氣可以順暢地流入擋板50之間，排氣特性提升。In addition, in the plasma processing apparatus 10 , the uppermost baffle 50 a among the plurality of baffles 50 protrudes from the side surface of the processing chamber 4 . Thereby, in the plasma processing apparatus 10, the side of the mounting table 23 becomes an opening, the exhaust path does not bend greatly, the exhaust gas can flow smoothly between the baffle plates 50, and the exhaust characteristics are improved.

又，電漿處理裝置10中，複數個擋板50設置於載置台23之周圍之全周。藉此，電漿處理裝置10中，對置電極之面積進一步擴大，因此可以確保電氣穩定性，可以抑制不穩定的放電。In addition, in the plasma processing apparatus 10 , a plurality of baffles 50 are provided on the entire circumference around the mounting table 23 . Thereby, in the plasma processing apparatus 10, since the area of the counter electrode is further enlarged, electrical stability can be ensured, and unstable discharge can be suppressed.

又，電漿處理裝置10具有直至載置台23之上端覆蓋載置台23之側面的導電性之覆蓋部55。複數個擋板50之中從載置台23之側面側突出的擋板50係設置於覆蓋部55。藉此，電漿處理裝置10中，對置電極之面積進一步擴大，因此可以確保電氣穩定性，可以抑制不穩定的放電。In addition, the plasma processing apparatus 10 has a conductive cover portion 55 covering the side surface of the mounting table 23 up to the upper end of the mounting table 23 . Among the plurality of baffles 50 , the baffle 50 protruding from the side surface of the mounting table 23 is provided on the covering portion 55 . Thereby, in the plasma processing apparatus 10, since the area of the counter electrode is further enlarged, electrical stability can be ensured, and unstable discharge can be suppressed.

又，電漿處理裝置10中，複數個擋板50之中，在載置台23之側面側及處理室4之側面側之最上部之擋板50之上表面設置有熔射膜90。藉此，電漿處理裝置10中，電漿處理中產生之副生成物等可以被熔射膜90捕獲。In addition, in the plasma processing apparatus 10 , among the plurality of baffles 50 , the upper surface of the uppermost baffles 50 on the side surfaces of the mounting table 23 and the side surfaces of the processing chamber 4 is provided with a spray film 90 . Thereby, in the plasma processing apparatus 10, the by-products etc. which generate|occur|produce in plasma processing can be captured by the fusion film 90.

又，電漿處理裝置10中設置有沿著載置台23之載置基板的載置面23a之外緣突出的突出部80。藉此，電漿處理裝置10中，基板G之面內之電漿處理之處理特性之均勻性可以提升。In addition, the plasma processing apparatus 10 is provided with a protruding portion 80 protruding along the outer edge of the mounting surface 23 a of the mounting table 23 on which the substrate is mounted. Thereby, in the plasma processing apparatus 10, the uniformity of the processing characteristics of the plasma processing in the surface of the substrate G can be improved.

以上，針對實施形態進行說明，但是此次揭示的實施形態全部僅為例示並非用來限制本發明者。實際上，前述實施形態可以多樣的形態具體呈現。又，前述實施形態中在不脫離申請專利範圍及其要點之範圍內可以各種形態進行省略、置換、變更。As mentioned above, although embodiment was demonstrated, all the embodiment disclosed this time is an illustration and does not limit this inventor. In fact, the aforementioned embodiments can be embodied in various forms. In addition, omissions, substitutions, and changes may be made in various forms in the aforementioned embodiments without departing from the scope of claims and the gist thereof.

例如前述實施形態中作為感應耦合型之電漿處理裝置10而示出在處理室4之上部透過介質窗(介質壁2)設置有高頻天線之情況，但亦可以適用於非介質窗而是透過金屬窗設置有高頻天線之情況。該情況下，處理氣體之供給並非由梁構造等之十字狀之噴淋筐體11而是在金屬窗設置氣體噴淋進行供給。又，前述實施形態中，作為電漿處理裝置10而示出感應耦合型之電漿處理裝置，但不限定於此，電漿處理裝置10為以載置台23成為下部電極的方式設置有上部電極而於彼等之間形成容量耦合電漿的容量耦合型之電漿處理裝置亦可。For example, in the above-mentioned embodiment, as the inductively coupled plasma processing device 10, a high-frequency antenna is provided on the upper part of the processing chamber 4 through a dielectric window (dielectric wall 2), but it can also be applied to a non-dielectric window but The case where a high-frequency antenna is installed through a metal window. In this case, the process gas is not supplied from the cross-shaped shower housing 11 with a beam structure or the like, but is supplied by installing a gas shower on the metal window. Also, in the foregoing embodiment, an inductively coupled plasma processing apparatus was shown as the plasma processing apparatus 10, but it is not limited thereto. The plasma processing apparatus 10 is provided with an upper electrode in such a manner that the mounting table 23 becomes a lower electrode. Also, a capacitively coupled plasma processing device that forms a capacitively coupled plasma between them may also be used.

又，前述實施形態說明進行電漿蝕刻或電漿灰化之裝置，但亦可以適用於CVD成膜等之其他電漿處理裝置10。另外，前述實施形態中示出作為基板使用FPD用之矩形基板的例，但亦可以適用於處理其他矩形基板之情況，不限定於矩形例如亦可以適用於半導體晶圓等之圓形之基板。In addition, although the above-mentioned embodiment described the apparatus which performs plasma etching or plasma ashing, it can also be applied to the other plasma processing apparatus 10, such as CVD film formation. In addition, in the above-mentioned embodiment, an example of using a rectangular substrate for FPD as the substrate was shown, but it can also be applied to the case of processing other rectangular substrates, and is not limited to rectangular substrates. For example, it can also be applied to circular substrates such as semiconductor wafers.

1:本體容器 4:處理室 23:載置台 23a:載置面 30:排氣口 31:排氣配管 32:自動壓力控制閥(APC) 33:真空泵 40:排氣部 50,50a~50d:擋板 51a,51b:前端部分 54:排氣區域 55:覆蓋部 80:突出部 90:熔射膜 100:控制部 G:基板1: Body container 4: Processing room 23: Carrying table 23a: loading surface 30: Exhaust port 31:Exhaust piping 32: Automatic pressure control valve (APC) 33: Vacuum pump 40: exhaust part 50,50a~50d: baffle 51a, 51b: Front part 54: Exhaust area 55: Covering Department 80: protrusion 90: Spray film 100: Control Department G: Substrate

[圖1]圖1係表示實施形態的電漿處理裝置之概略構成之一例之垂直剖面圖。 [圖2A]圖2A係表示實施形態的處理室內之構成之一例之水平剖面圖。 [圖2B]圖2B係表示實施形態的處理室內之構成之另一例之水平剖面圖。 [圖3]圖3係表示實施形態的往排氣口的排氣之流動之一例之圖。 [圖4]圖4係表示實施形態的電漿化的氣體之流動之一例之圖。 [圖5]圖5係表示比較例的電漿化的氣體之流動之一例之圖。 [圖6]圖6係表示實施形態的來自排氣部之微粒之反衝之一例之圖。 [圖7]圖7係表示實施形態的電漿處理裝置之另一構成之一例之圖。 [圖8]圖8係表示實施形態的電漿處理裝置之另一構成之一例之圖。 [圖9]圖9係表示實施形態的電漿處理裝置之另一構成之一例之圖。 [圖10]圖10係表示實施形態的電漿處理裝置之另一構成之一例之圖。 [圖11]圖11係表示實施形態的電漿處理裝置之另一構成之一例之圖。 [圖12]圖12係表示實施形態的蝕刻之變化之一例之圖。 [圖13]圖13係表示實施形態的電漿處理裝置之另一構成之一例之圖。[FIG. 1] FIG. 1 is a vertical cross-sectional view showing an example of a schematic configuration of a plasma processing apparatus according to an embodiment. [ Fig. 2A] Fig. 2A is a horizontal cross-sectional view showing an example of the configuration of the processing chamber of the embodiment. [ Fig. 2B] Fig. 2B is a horizontal sectional view showing another example of the configuration of the processing chamber of the embodiment. [ Fig. 3] Fig. 3 is a diagram showing an example of the flow of exhaust gas to the exhaust port according to the embodiment. [FIG. 4] FIG. 4 is a diagram showing an example of the flow of plasmaized gas according to the embodiment. [ Fig. 5 ] Fig. 5 is a diagram showing an example of the flow of the plasmaized gas in the comparative example. [ Fig. 6] Fig. 6 is a diagram showing an example of the recoil of particles from the exhaust part according to the embodiment. [ Fig. 7] Fig. 7 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. [ Fig. 8] Fig. 8 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. [ Fig. 9] Fig. 9 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. [ Fig. 10] Fig. 10 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. [ Fig. 11] Fig. 11 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment. [ Fig. 12] Fig. 12 is a diagram showing an example of a change in etching according to the embodiment. [ Fig. 13] Fig. 13 is a diagram showing an example of another configuration of the plasma processing apparatus according to the embodiment.

1:本體容器 1: Body container

1a:接地線 1a: Ground wire

2:介質壁 2: medium wall

3:天線室 3: Antenna room

3a:側壁 3a: side wall

4:處理室 4: Processing room

4a:處理室之側壁 4a: The side wall of the processing chamber

4b:處理室的底壁 4b: Bottom wall of the processing chamber

4c:開口部 4c: opening

5:支撐棚架 5: Support scaffolding

10:電漿處理裝置 10: Plasma treatment device

11:噴淋筐體 11: Spray basket

12:氣體流路 12: Gas flow path

12a:氣體吐出孔 12a: Gas spit hole

13:高頻(RF)天線 13: High frequency (RF) antenna

13a:天線線圈 13a: Antenna coil

14:匹配器 14: Matcher

15:高頻電源 15: High frequency power supply

16:供電構件 16: Power supply components

17:間隔件 17: spacer

19:供電線 19: Power supply line

20:處理氣體供給系統 20: Process gas supply system

20a:氣體供給管 20a: gas supply pipe

22:端子 22: terminal

23:載置台 23: Carrying table

23a:載置面 23a: loading surface

24:絕緣體構件 24: Insulator member

25:供電線 25: Power supply line

26:匹配器 26: Matcher

27:偏壓用之高頻電源 27: High frequency power supply for bias voltage

28:He氣體流路 28: He gas flow path

29:閘閥 29: gate valve

29a:搬出入口 29a: Move out of the entrance

30:排氣口 30: Exhaust port

30a:開口擋板 30a: opening baffle

31:排氣配管 31:Exhaust piping

32:自動壓力控制閥(APC) 32: Automatic pressure control valve (APC)

33:真空泵 33: Vacuum pump

40:排氣部 40: exhaust part

50,50a~50b:擋板 50,50a~50b: baffle

51a,51b:前端部分 51a, 51b: Front part

54:排氣區域 54: Exhaust area

55:覆蓋部 55: Covering Department

100:控制部 100: Control Department

101:使用者介面 101: User Interface

102:記憶部 102: memory department

G:基板 G: Substrate

Claims (6)

一種電漿處理裝置，係具有：處理室，係於其內部設置有載置基板的載置台，對基板實施電漿處理；排氣口，係設置於前述載置台之周圍之比起載置台的載置基板之載置面更低的位置，對前述處理室內實施排氣；及複數個擋板，係由導電性材料形成，分別連接於接地電位，相對於往前述排氣口的排氣之流動設置於比前述排氣口更上游側，從前述載置台之側面側與前述處理室之側面側交替突出，該突出的前端部分係隔開間隔而重複；還具有：直至前述載置台之上端將前述載置台之側面予以覆蓋的導電性之覆蓋部，前述複數個擋板之中從前述載置台之側面側突出的擋板，係設置於前述覆蓋部。 A plasma processing device, comprising: a processing chamber, in which a mounting table for mounting a substrate is provided, and plasma processing is performed on the substrate; an exhaust port is provided around the mounting table at a distance from the mounting table The lower position of the loading surface on which the substrate is placed is used to exhaust the aforementioned processing chamber; and a plurality of baffles are formed of conductive materials and are respectively connected to the ground potential. The flow is arranged on the upstream side of the exhaust port, protruding alternately from the side of the mounting table and the side of the processing chamber, and the protruding front ends are repeated at intervals; it also has: until the upper end of the mounting table The conductive covering portion covering the side surface of the mounting table, the shutter protruding from the side surface of the mounting table among the plurality of shutters is provided on the covering portion. 如請求項1之電漿處理裝置，其中前述複數個擋板之中最上部之擋板係從前述載置台之側面側突出。 The plasma processing device according to claim 1, wherein the uppermost baffle among the plurality of baffles protrudes from the side of the mounting table. 如請求項1之電漿處理裝置，其中前述複數個擋板之中最上部之擋板係從前述處理室之側面側突出。 The plasma processing device according to claim 1, wherein the uppermost baffle among the plurality of baffles protrudes from the side of the processing chamber. 如請求項1至3之中任一之電漿處理裝置，其中前述複數個擋板係設置於前述載置台之周圍之全周。 The plasma processing device according to any one of claims 1 to 3, wherein the plurality of baffles are arranged around the entire circumference of the mounting table. 如請求項1至3之中任一之電漿處理裝置，其中前述複數個擋板之中，前述載置台之側面側及前述處理室之側面側之最上部之擋板係於上表面設置有熔射膜。 The plasma processing device according to any one of Claims 1 to 3, wherein among the plurality of baffles, the uppermost baffles on the side surfaces of the mounting table and the side surfaces of the processing chamber are provided with a baffle on the upper surface Spray film. 如請求項1至3之中任一之電漿處理裝置，其中前述載置台，係設置有沿著載置前述基板的載置面之外緣突出的突出部。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the mounting table is provided with a protruding portion protruding along the outer edge of the mounting surface on which the substrate is mounted.
TW109100701A 2019-01-22 2020-01-09 Plasma treatment device TWI805891B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201633362A (en) * 2014-12-16 2016-09-16 東京威力科創股份有限公司 Plasma treatment device
US20180240686A1 (en) * 2011-05-10 2018-08-23 Lam Research Corporation Semiconductor Processing System Having Multiple Decoupled Plasma Sources

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3972970B2 (en) 1998-08-06 2007-09-05 株式会社エフオーアイ Plasma reactor
JP4255747B2 (en) 2003-05-13 2009-04-15 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2006303309A (en) 2005-04-22 2006-11-02 Hitachi High-Technologies Corp Plasma treatment apparatus
JP4777790B2 (en) 2005-09-29 2011-09-21 東京エレクトロン株式会社 Structure for plasma processing chamber, plasma processing chamber, and plasma processing apparatus
US20080110567A1 (en) 2006-11-15 2008-05-15 Miller Matthew L Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
CN100576438C (en) * 2006-11-15 2009-12-30 应用材料股份有限公司 Strengthen constraint baffle plate and flow equalizer that magnetic control system plasma radial distributes
JP5264231B2 (en) 2008-03-21 2013-08-14 東京エレクトロン株式会社 Plasma processing equipment
JP5120089B2 (en) 2008-06-17 2013-01-16 東京エレクトロン株式会社 Processing equipment
US20100081284A1 (en) * 2008-09-29 2010-04-01 Applied Materials, Inc. Methods and apparatus for improving flow uniformity in a process chamber
JP6305825B2 (en) 2014-05-12 2018-04-04 東京エレクトロン株式会社 Plasma processing apparatus and exhaust structure used therefor
JP6438320B2 (en) * 2014-06-19 2018-12-12 東京エレクトロン株式会社 Plasma processing equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180240686A1 (en) * 2011-05-10 2018-08-23 Lam Research Corporation Semiconductor Processing System Having Multiple Decoupled Plasma Sources
TW201633362A (en) * 2014-12-16 2016-09-16 東京威力科創股份有限公司 Plasma treatment device

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