TWI784285B - 半導體元件以及其製造方法 - Google Patents
半導體元件以及其製造方法 Download PDFInfo
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- TWI784285B TWI784285B TW109120537A TW109120537A TWI784285B TW I784285 B TWI784285 B TW I784285B TW 109120537 A TW109120537 A TW 109120537A TW 109120537 A TW109120537 A TW 109120537A TW I784285 B TWI784285 B TW I784285B
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- semiconductor wafer
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- redistribution layer
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Abstract
半導體元件可包括:第一半導體晶片;第一重佈線層,位於第一半導體晶片的底表面上;第二半導體晶片,位於第一半導體晶片上;第二重佈線層,位於第二半導體晶片的底表面上;模製層,在第一半導體晶片的側壁及第二半導體晶片的側壁上以及第一半導體晶片的底表面上延伸;以及外部端子,延伸穿過模製層且電性連接至第一重佈線層。第二重佈線層可包括暴露部分。第一重佈線層可包括電性連接至第一半導體晶片的第一導電圖案及與第一半導體晶片電性絕緣的第二導電圖案。第二重佈線層的暴露部分與第一重佈線層的第二導電圖案可藉由第一連接配線電性連接。
Description
本發明概念的實施例是有關於半導體元件以及其製造方法。
近來,可攜式元件在電子市場上的需求日益增加,且因此需要高效能、小且輕的電子組件。具體而言,對高效能半導體記憶體元件的需求日益增加。舉例而言,需求具有高頻寬及/或高處理能力的半導體記憶體元件。
將多個個別組件整合於單個封裝中的半導體封裝技術以及減小個別組件的尺寸的技術可有益於達成小且輕的電子組件。具體而言,用於處理高頻訊號的半導體封裝可有益於具有優異的電性特性以及小的尺寸。
晶圓級封裝(wafer-level package)可為其中在不需要附加的印刷電路板(printed circuit board,PCB)的條件下藉由以晶圓級別的重佈線製程將半導體晶片的接墊連接至封裝的焊料球的半導體封裝。
本發明概念的實施例可提供具有改善的電性特性的半導體元件。
本發明概念的實施例亦可提供具有改善的結構穩定性的半導體元件。
本發明概念的實施例亦可提供製造半導體元件的方法,所述方法能夠簡化製程並降低製造成本。
根據本發明概念的一些實施例,半導體元件可包括:第一半導體晶片;第一重佈線層,位於所述第一半導體晶片的底表面上;第二半導體晶片,位於所述第一半導體晶片上;第二重佈線層,位於所述第二半導體晶片的底表面上;模製層,在所述第二半導體晶片的側壁、所述第一半導體晶片的側壁及所述第一半導體晶片的所述底表面上延伸;以及外部端子,延伸穿過所述模製層且電性連接至所述第一重佈線層。所述第二重佈線層可包括不與所述第一半導體晶片交疊的暴露部分。所述第一重佈線層可包括電性連接至所述第一半導體晶片的第一導電圖案及與所述第一半導體晶片電性絕緣的第二導電圖案。所述第二重佈線層的所述暴露部分與所述第一重佈線層的所述第二導電圖案可藉由第一連接配線電性連接至彼此。
根據本發明概念的一些實施例,半導體元件可包括:第一半導體晶片,包括第一主動面及與所述第一主動面相對的第一非主動面;第一接墊,位於所述第一主動面上;以及第二半導體晶片,位於所述第一半導體晶片上。所述第二半導體晶片可包括面對所述第一半導體晶片的所述第一非主動面的第二主動面,且所述第二半導體晶片可在垂直方向上與所述第一半導體晶片間隔開且可在側向上突出至所述第一半導體晶片的第一側之外。所述第一半導體晶片可暴露出所述第二半導體晶片的所述第二主動面的暴露部分。所述半導體元件亦可包括:第二接墊,位於所述第二半導體晶片的所述第二主動面的所述暴露部分上;外部端子,位於所述第一半導體晶片的所述第一主動面上;以及模製層,自所述第一半導體晶片的側壁及所述第二半導體晶片的側壁延伸至所述第一半導體晶片的所述第一主動面上。所述模製層可至少局部地覆蓋所述外部端子的側面,且所述第一接墊與所述第二接墊可藉由第一連接配線電性連接至彼此。
根據本發明概念的一些實施例,半導體元件可包括:第一半導體晶片;第一接墊,位於所述第一半導體晶片的底表面上;以及第二半導體晶片,位於所述第一半導體晶片上。所述第二半導體晶片中的每一者可突出至所述第一半導體晶片的相應的側之外且可包括底表面,所述底表面可包括被所述第一半導體晶片暴露出的暴露部分。所述半導體元件亦可包括第二接墊,所述第二接墊中的每一者位於所述第二半導體晶片中的相應的一者的所述底表面的所述暴露部分上;以及第三接墊,位於所述第一半導體晶片的所述底表面上。所述第三接墊可與所述第一接墊間隔開。所述半導體元件可更包括:連接端子,所述連接端子中的每一者將所述第一接墊中的一者電性連接至所述第二接墊中的一者;外部端子,位於所述第一半導體晶片的所述底表面上;以及模製層,覆蓋所述第一半導體晶片的所述底表面及所述第二半導體晶片的所述底表面。所述外部端子中的每一者可電性連接至所述第一接墊及所述第三接墊中的相應的一者。所述模製層可接觸所述外部端子的側面。自所述第一半導體晶片的所述底表面至所述模製層的底表面的距離可介於自所述第一半導體晶片的所述底表面至所述外部端子中的一者的底端的距離的約10%至50%的範圍內。所述第二半導體晶片中的最上一個半導體晶片的頂表面可與所述模製層的最頂端共面。
根據本發明概念的一些實施例,製造半導體元件的方法可包括:將第一半導體晶片黏合至載體基板上,所述第一半導體晶片在所述第一半導體晶片的與所述載體基板相對的一個表面上包括第一重佈線層;在所述第一半導體晶片上偏移堆疊第二半導體晶片以暴露出所述第一重佈線層的一部分,所述第二半導體晶片在所述第二半導體晶片的與所述第一半導體晶片相對的一個表面上包括第二重佈線層;藉由連接配線將所述第一重佈線層的暴露部分連接至所述第二重佈線層;形成覆蓋所述第一半導體晶片、所述第二半導體晶片及所述連接配線的模製層;以及移除所述載體基板。
在下文中將參照附圖闡述根據本發明概念的半導體元件。
圖1A是示出根據本發明概念的一些實施例的半導體元件的剖視圖。圖1B是示出根據本發明概念的一些實施例的半導體元件的平面圖。圖1A對應於沿圖1B所示線A-A’截取的剖視圖。
參照圖1A及圖1B,可提供第一單元結構100。第一單元結構100可包括第一半導體晶片110及設置於第一半導體晶片110的一個表面上的第一重佈線層120。
可提供第一半導體晶片110。第一半導體晶片110可具有前表面及後表面。在本說明書中,前表面可為與半導體晶片中的積體部件或組件的主動面相鄰的表面且可被定義為上面形成有半導體晶片的接墊的表面。後表面可被定義為與前表面相對的另一表面。舉例而言,第一半導體晶片110可包括設置於第一半導體晶片110的前表面上的第一晶片接墊。第一半導體晶片110可具有彼此相對且在第一方向D1上彼此間隔開的第一側壁110a與第二側壁110b。在下文中,第一方向D1及第二方向D2可平行於第一半導體晶片110的後表面且可彼此垂直,且第三方向D3可垂直於第一半導體晶片110的後表面。第一半導體晶片110可為記憶體晶片,例如動態隨機存取記憶體(dynamic random access memory,DRAM)、靜態隨機存取記憶體(static random access memory,SRAM)、磁阻式隨機存取記憶體(magnetoresistive random access memory,MRAM)或快閃記憶體(flash memory)。在一些實施例中,第一半導體晶片110可為邏輯晶片。第一半導體晶片110可包含例如矽(Si)等半導體材料。在本文中,用語「側壁(sidewall)」可與「側面(side)」互換。第一重佈線層120可設置於第一半導體晶片110的前表面上。第一重佈線層120可對第一半導體晶片110的第一晶片接墊進行重佈線。第一重佈線層120可包括第一導電圖案122及第一絕緣層124。第一絕緣層124可覆蓋第一半導體晶片110的前表面,且可暴露出第一導電圖案122的一些部分。第一導電圖案122的被第一絕緣層124暴露出的部分可用作第一導電圖案122的接墊,所述接墊可電性連接至外部元件。在下文中,整個導電圖案(例如,第一導電圖案122)被稱為導電圖案,且導電圖案的暴露部分被稱為接墊。在一些實施例中,在第一導電圖案122的暴露部分上可設置有附加的連接接墊。當在平面圖中觀察時,第一導電圖案122的接墊(例如,第一連接接墊CP1及第二連接接墊CP2)可設置於第一半導體晶片110內部。換言之,第一半導體晶片110及第一重佈線層120可呈扇入型封裝的形式。圖1B中的第一導電圖案122的數目及佈置是出於闡述本發明概念的目的而作為實例示出。然而,本發明概念的實施例並非僅限於此。第一絕緣層124可包含例如氧化物(例如,氧化物層)。舉例而言,第一絕緣層124可包含氧化矽(SiOx
)。「部件A覆蓋部件B的表面」(或相似語言)意指部件A位於部件B的表面上,但未必意指部件A完全覆蓋部件B的表面。第一半導體晶片110的主動面可為上面設置有第一重佈線層120的表面。在一些實施例中,第一重佈線層120可直接接觸且在實體上接觸第一半導體晶片110的主動面,如圖1A中所示。
第一導電圖案122可包括第一子圖案SP1及第二子圖案SP2。第二子圖案SP2可與第一子圖案SP1間隔開。舉例而言,第一子圖案SP1可設置於第一半導體晶片110的前表面的第一區R1上,且第二子圖案SP2可設置於第一半導體晶片110的前表面的第二區R2上。第一區R1可在第一方向D1上位於第二區R2的側面處。在一些實施例中,第一區R1可相鄰於第一半導體晶片110的第二側壁110b,如圖1B中所示。第一子圖案SP1可電性連接至第一半導體晶片110。在一些實施例中,第一子圖案SP1可電性連接至第一半導體晶片110的部件(例如,導電線(例如位元線)、電晶體及電容器)。第二子圖案SP2可與第一半導體晶片110電性絕緣。在一些實施例中,第二子圖案SP2可不電性連接至第一半導體晶片110的任何部件。第一子圖案SP1的一部分及第二子圖案SP2的一部分可被第一絕緣層124暴露出且可用作接墊。此處,第一子圖案SP1的暴露部分可被定義為第一連接接墊CP1且可為電性連接至第一半導體晶片110的接墊。第二子圖案SP2的暴露部分可被定義為第二連接接墊CP2且可為與第一半導體晶片110絕緣(例如,與第一半導體晶片110電性絕緣)的接墊。換言之,第二連接接墊CP2可為與第一半導體晶片110及第一重佈線層120的第一子圖案SP1電性隔離(或浮接)的接墊。在一些實施例中,第一子圖案SP1的第一連接接墊CP1可電性連接至第一半導體晶片110的部件,且第二子圖案SP2的第二連接接墊CP2可不電性連接至第一半導體晶片110的任何部件。
在一些實施例中,第一子圖案SP1與第二子圖案SP2可電性連接至彼此。換言之,第一子圖案SP1及第二子圖案SP2二者皆可電性連接至第一半導體晶片110。在下文中,將以與第一半導體晶片110電性絕緣的第二子圖案SP2作為實例闡述。
在第一半導體晶片110的前表面上可設置有外部端子130。外部端子130可設置於第一連接接墊CP1及第二連接接墊CP2上。外部端子130可不設置於第二連接接墊CP2中的一些第二連接接墊CP2上。外部端子130可包括連接至第一連接接墊CP1的第一端子132及連接至第二連接接墊CP2的第二端子134。此處,第一連接端子BW1可連接至第二連接接墊CP2中的其他第二連接接墊CP2。稍後將對此進行詳細闡述。第一端子132可電性連接至第一半導體晶片110,且第二端子134可與第一半導體晶片110電性絕緣。在一些實施例中,第一端子132可電性連接至第一半導體晶片110的部件,且第二端子134可不電性連接至第一半導體晶片110的任何部件。在圖1B中,為簡化說明,未示出外部端子130。
在第一單元結構100上可設置有第二單元結構200。第一單元結構100與第二單元結構200可以如圖1A中所示的偏置堆疊結構的形式設置。舉例而言,第一單元結構100與第二單元結構200可在與第一方向D1相對的方向上傾斜地堆疊,且此形狀可為在與第一方向D1相對的方向上向上傾斜的階梯形狀。詳言之,第二單元結構200的一部分可與第一單元結構100交疊,且第二單元結構200的另一部分可在側向上突出至第一單元結構100的一個側壁之外。第二單元結構200可在側向上突出至第一半導體晶片110的第一側壁110a之外。換言之,當在平面圖中觀察時,第二單元結構200可堆疊於第一單元結構100上,以在與第一方向D1相對的方向上相對於第一單元結構100發生偏移。第二單元結構200可包括第二半導體晶片210及設置於第二半導體晶片210的一個表面上的第二重佈線層220。在一些實施例中,第二單元結構200在第一方向D1上的中心可自第一單元結構100在第一方向D1上的中心朝與第一方向D1相對的方向偏置開,如圖1A中所示。本文中提及「部件A與部件B交疊」(或相似語言)意指部件A在第三方向D3上與部件B交疊,且存在至少一條在第三方向D3上延伸且與部件A及部件B二者相交的線。第二半導體晶片210的主動面可為上面設置有第二重佈線層220的表面。在一些實施例中,第二重佈線層220可直接接觸且在實體上接觸第二半導體晶片210的主動面,如圖1A中所示。
第二半導體晶片210可設置於第一半導體晶片110上。第二半導體晶片210可設置於第一半導體晶片110的後表面上。第二半導體晶片210的配置可實質上相同於或相似於第一半導體晶片110的配置。舉例而言,第二半導體晶片210的尺寸(例如,長度、寬度及高度)可等於第一半導體晶片110的尺寸(例如,長度、寬度及高度)。在一些實施例中,第二半導體晶片210的長度、寬度及高度可小於第一半導體晶片110的長度、寬度及高度。第二半導體晶片210可具有與主動面對應的前表面及與非主動面對應的後表面。舉例而言,第二半導體晶片210可包括設置於第二半導體晶片210的前表面上的第二晶片接墊。第二半導體晶片210的前表面可面對第一半導體晶片110。第二半導體晶片210可為例如記憶體晶片,例如DRAM、SRAM、MRAM或快閃記憶體。第二半導體晶片210可包含例如矽(Si)等半導體材料。
第二重佈線層220可設置於第二半導體晶片210的前表面上。第二重佈線層220可對第二半導體晶片210的第二晶片接墊進行重佈線。第二重佈線層220可包括第二導電圖案222及第二絕緣層224。第二絕緣層224可覆蓋第二半導體晶片210的前表面,但可暴露出第二導電圖案222的一些部分。第二導電圖案222的被第二絕緣層224暴露出的部分可用作第二導電圖案222的接墊,所述接墊可電性連接至外部元件。在一些實施例中,在第二導電圖案222的暴露部分上可設置有附加的連接接墊。在下文中,用作接墊的第二導電圖案222的暴露部分可被稱為第一接墊PAD1。當在平面圖中觀察時,第一接墊PAD1可設置於第二半導體晶片210內部。換言之,第二半導體晶片210及第二重佈線層220可呈扇入型封裝的形式。第二絕緣層224可包含例如氧化物(例如,氧化物層)。第二導電圖案222可電性連接至第二半導體晶片210。當在平面圖中觀察時,第一接墊PAD1可在與第一方向D1相對的方向上設置於第二半導體晶片210的前表面的一側部分上。
第二重佈線層220可接觸第一半導體晶片110的後表面。此處,由於第一單元結構100與第二單元結構200以階梯形狀堆疊,因此第二半導體晶片210的前表面(或第二單元結構200的前表面)的一部分可被暴露出。第二半導體晶片210的前表面的所述一部分可被第一半導體晶片110暴露出。第二半導體晶片210的被暴露出的前表面可為主動面。舉例而言,當在平面圖中觀察時,第一接墊PAD1可設置於第一半導體晶片110的第一側壁110a的側面處。第一接墊PAD1可在第二半導體晶片210之下被暴露出。在一些實施例中,當在如圖1B中所示的平面圖中觀察時,第一接墊PAD1可相鄰於第一半導體晶片110的第一側壁110a。
第二連接接墊CP2中的一些第二連接接墊CP2可藉由第一連接端子BW1電性連接至第一接墊PAD1。換言之,外部端子130可連接至第二連接接墊CP2中的一些第二連接接墊CP2,且第一連接端子BW1可連接至第二連接接墊CP2中的其他第二連接接墊CP2。第一連接端子BW1可為用於配線接合的連接配線。第一連接端子BW1可連接至第一半導體晶片110的前表面上的第二連接接墊CP2中的一些第二連接接墊CP2,且可連接至第二半導體晶片210的前表面上的第一接墊PAD1。此處,上面設置有第二子圖案SP2的第二區R2可相鄰於第一半導體晶片110的第一側壁110a設置。換言之,第二區R2可相鄰於第一接墊PAD1設置。因此,第一連接端子BW1的長度可為短的。第一連接端子BW1可在與第三方向D3相對的方向上自第二連接接墊CP2及第一接墊PAD1延伸。換言之,第一連接端子BW1的最底端可位於較第一半導體晶片110的底表面及第一重佈線層120的底表面低的水平高度處。第一半導體晶片110可藉由第一重佈線層120的第一連接接墊CP1電性連接至第一端子132,且第二半導體晶片210可藉由第二重佈線層220的第一接墊PAD1、第一連接端子BW1及第一重佈線層120的第二連接接墊CP2電性連接至第二端子134。
在一些實施例中,第一半導體晶片110的部件可藉由第一重佈線層120的第一連接接墊CP1電性連接至一或多個第一端子132,且第二半導體晶片210的部件可藉由第二重佈線層220的第一接墊PAD1、第一連接端子BW1及第一重佈線層120的第二連接接墊CP2電性連接至一或多個第二端子134。本文中提及「部件A連接至部件B」(或相似語言)意指部件A在實體上連接至及/或電性連接至部件B。本文中使用的用語「及/或(and/or)」包括相關列出項中的一或多個相關列出項的任意組合及所有組合。
在一些實施例中,第一連接端子BW1可呈如圖1A中所示的細線的形式,且第一連接端子BW1的相對的端分別直接接觸第一接墊PAD1中的一者及第二連接接墊CP2中的一者。
根據本發明概念的實施例,第二半導體晶片210可藉由使用第一重佈線層120連接至(例如,電性連接至)用於電性連接至外部(例如,外部元件)的外部端子130。因此,可提供以下半導體元件:所述半導體元件不需要用於對第二半導體晶片210進行電性連接及重佈線的附加組件,但結構簡單且有利於小型化。
另外,第一半導體晶片110及第二半導體晶片210可分別連接至在第一重佈線層120中彼此電性絕緣的子圖案SP1與子圖案SP2,且因此可增大半導體元件的頻寬。
此外,連接至第二半導體晶片210的第二連接接墊CP2可相鄰於第一接墊PAD1設置,且因此第二半導體晶片210與外部端子130之間的電性連接可為短的,且半導體元件的電性特性可得到改善。
根據本發明概念的實施例,第二半導體晶片210可藉由第一連接端子BW1連接至第一重佈線層120。換言之,可能不需要藉由高成本製造製程形成的組件(例如,穿孔),且因此根據本發明概念的製造製程可簡單且便宜,且可提供具有簡單結構的半導體元件。
在一些實施例中,第一子圖案SP1與第二子圖案SP2可電性連接至彼此。第二半導體晶片210與第一半導體晶片110可藉由第一重佈線層120的第一導電圖案122電性連接至彼此且可一同連接至外部端子130。在此種情形中,第一半導體晶片110與第二半導體晶片210可為執行相同功能的半導體晶片且可處理並傳輸相同的訊號。當第一半導體晶片110與第二半導體晶片210連接至相同的導電圖案時,半導體元件的處理能力可得到提高。
再次參照圖1A及圖1B,在第一單元結構100與第二單元結構200之間可設置有第一黏合層230。第一黏合層230可設置於第一半導體晶片110的後表面與設置於第二半導體晶片210的前表面上的第二重佈線層220之間。換言之,第一黏合層230可將第二重佈線層220黏合至第一半導體晶片110的後表面。第一黏合層230可包括例如晶粒貼合膜(die attach film,DAF)。第二單元結構200可藉由第一黏合層230黏合至第一單元結構100。
可提供模製層140。模製層140可覆蓋第一單元結構100的側壁及第二單元結構200的側壁。模製層140可延伸至第一半導體晶片110的前表面上,以覆蓋第一重佈線層120。模製層140可接觸與第一重佈線層120連接的外部端子130的側壁。此處,自第一重佈線層120的底表面至模製層140的底表面的第一距離d1可介於自第一重佈線層120的底表面至外部端子130的最底端的第二距離d2的約1/10至約1/2(即,約10%至約50%)的範圍內。換言之,模製層140可暴露出外部端子130的下部部分,且外部端子130的被暴露出的下部部分的體積可為外部端子130的總體積的至少1/2或多於外部端子130的總體積的1/2。模製層140可隱埋或覆蓋第一連接端子BW1。舉例而言,自第一重佈線層120的底表面至第一連接端子BW1的最底端的第三距離d3可小於自第一重佈線層120的底表面至模製層140的底表面的第一距離d1。換言之,第一連接端子BW1的最底端可位於較第一重佈線層120的底表面低且較模製層140的底表面高的水平高度處。模製層140可暴露出第二半導體晶片210的後表面。舉例而言,模製層140的最頂端可位於與第二半導體晶片210的後表面相同的水平高度處。模製層140可包含例如環氧模製化合物(epoxy molding compound,EMC)。在一些實施例中,模製層140的最頂端可與第二半導體晶片210的後表面共面,如圖1A中所示。
根據本發明概念的實施例,模製層140可覆蓋第一半導體晶片110的側壁及第二半導體晶片210的側壁,且亦可覆蓋第一半導體晶片110的前表面(或第一重佈線層120的底表面)。換言之,模製層140可自下方覆蓋第一單元結構100與第二單元結構200的堆疊結構,且可牢固地保護第一半導體晶片110及第二半導體晶片210。具體而言,模製層140可保護第一半導體晶片110的隅角部分及第二半導體晶片210的隅角部分。
另外,模製層140可不覆蓋第二半導體晶片210的後表面,且因此可減小半導體元件的高度且可減小半導體元件的尺寸。由於模製層140可不在第二半導體晶片210的後表面上延伸,因此模製層140可不增大半導體元件的高度。
圖2A及圖3A是示出根據本發明概念的一些實施例的半導體元件的剖視圖。圖2B及圖3B是示出根據本發明概念的一些實施例的半導體元件的平面圖。圖2A及圖3A分別對應於沿圖2B及圖3B所示線B-B’及C-C’截取的剖視圖。在以下實施例中,與圖1A及圖1B所示實施例中的組件相同或相似的組件將由相同的參考編號或指示符指示,且為使闡釋容易及方便起見,將省略或簡要提及對所述組件的說明。換言之,將主要闡述以下實施例與圖1A及圖1B所示實施例之間的不同之處。
參照圖2A及圖2B,在第二單元結構200上可設置有第三單元結構300。第一單元結構100、第二單元結構200及第三單元結構300可以偏置堆疊結構的形式堆疊。舉例而言,第一單元結構100、第二單元結構200及第三單元結構300可在與第一方向D1相對的方向上傾斜地堆疊,且此形狀可為在與第一方向D1相對的方向上向上傾斜的階梯形狀。詳言之,第三單元結構300的一部分可與第二單元結構200交疊,且第三單元結構300的另一部分可在側向上突出至第二單元結構200的一個側壁之外。第三單元結構300可在與第一方向D1相對的方向上自第二半導體晶片210突出。換言之,當在平面圖中觀察時,第三單元結構300可堆疊於第二單元結構200上,以在與第一方向D1相對的方向上相對於第二單元結構200發生偏移。與圖2A及圖2B不同,可提供多個第三單元結構300。所述多個第三單元結構300可偏置堆疊於第二單元結構200上。第三單元結構300可包括第三半導體晶片310及設置於第三半導體晶片310的一個表面上的第三重佈線層320。
第三半導體晶片310可設置於第二半導體晶片210上。第三半導體晶片310可設置於第二半導體晶片210的後表面上。第三半導體晶片310可實質上相同於第二半導體晶片210。然而,本發明概念的實施例並非僅限於此。第三半導體晶片310可具有面對第二半導體晶片210的前表面及與第三半導體晶片310的前表面相對的後表面。
第三重佈線層320可設置於第三半導體晶片310的前表面上。第三重佈線層320可包括第三導電圖案322及第三絕緣層324。第三絕緣層324可覆蓋第三半導體晶片310的前表面,但可暴露出第三導電圖案322的一些部分。第三導電圖案322的被第三絕緣層324暴露出的部分可用作第三導電圖案322的接墊,所述接墊可電性連接至外部元件。在下文中,用作接墊的第三導電圖案322的暴露部分可被稱為第二接墊PAD2。第三導電圖案322可電性連接至第三半導體晶片310。當在平面圖中觀察時,第二接墊PAD2可在與第一方向D1相對的方向上設置於第三半導體晶片310的前表面的一側部分上。在一些實施例中,第三導電圖案322可電性連接至第三半導體晶片310的部件(例如,導電線(例如位元線)、電晶體及電容器)。
第三重佈線層320可接觸第二半導體晶片210的後表面。此處,由於第二單元結構200與第三單元結構300以階梯形狀堆疊,因此第三半導體晶片310的前表面(或第三單元結構300的前表面)的一部分可被暴露。第三半導體晶片310的被暴露出的前表面可為主動面。舉例而言,當在平面圖中觀察時,第二接墊PAD2可在與第一方向D1相對的方向上設置於第二半導體晶片210的側面處。第二接墊PAD2可在第三半導體晶片310之下被暴露出。在一些實施例中,第二單元結構200可暴露出第三半導體晶片310的前表面的一部分,如圖2A中所示。此外,在一些實施例中,當在如圖2B中所示的平面圖中觀察時,第二接墊PAD2可相鄰於第二半導體晶片210的所述側面。
第三半導體晶片310可電性連接至第一單元結構100的第一重佈線層120。舉例而言,第二連接接墊CP2中的一些第二連接接墊CP2可藉由第二連接端子BW2電性連接至第二接墊PAD2。第二連接端子BW2可為用於配線接合的連接配線。第二連接端子BW2可連接至第一半導體晶片110的前表面上的第二連接接墊CP2中的一些第二連接接墊CP2,且可連接至第三半導體晶片310的前表面上的第二接墊PAD2。此處,上面設置有第二子圖案SP2的第二區R2可相鄰於第一半導體晶片110的第一側壁110a設置,且因此第二連接端子BW2的長度可為短的。第二連接端子BW2的最底端可位於較第一半導體晶片110的前表面及第一重佈線層120的底表面低的水平高度處。
第一連接端子BW1及第二連接端子BW2可連接至彼此不同的第二連接接墊CP2。第一連接端子BW1所連接至的第一子連接接墊SCP1可與第二連接端子BW2所連接至的第二子連接接墊SCP2絕緣。第二半導體晶片210及第三半導體晶片310可分別連接至在第一重佈線層120中彼此電性絕緣的導電圖案,且因此可增大半導體元件的頻寬。
作為另外一種選擇,第一子連接接墊SCP1可電性連接至第二子連接接墊SCP2。在此種情形中,第二半導體晶片210與第三半導體晶片310可為執行相同功能的半導體晶片,且可處理並傳輸相同的訊號。當第二半導體晶片210與第三半導體晶片310連接至相同的導電圖案時,半導體元件的處理能力可得到提高。
在一些實施例中,第二連接端子BW2可對第一接墊PAD1與第二接墊PAD2進行連接。如圖3A及圖3B中所示,第二連接端子BW2可連接至第二半導體晶片210的前表面上的第一接墊PAD1,且可連接至第三半導體晶片310的前表面上的第二接墊PAD2。第三半導體晶片310可藉由第三重佈線層320的第二接墊PAD2、第二連接端子BW2、第二重佈線層220的第一接墊PAD1、第一連接端子BW1及第一重佈線層120的第二連接接墊CP2電性連接至外部端子130。在此種情形中,第二半導體晶片210與第三半導體晶片310可為執行相同功能的半導體晶片。當第二半導體晶片210與第三半導體晶片310藉由第一接墊PAD1共同連接至第二子圖案SP2時,半導體元件的處理能力可得到提高。
在第二單元結構200與第三單元結構300之間可設置有第二黏合層330。第二黏合層330可設置於第二半導體晶片210的後表面與設置於第三半導體晶片310的前表面上的第三重佈線層320之間。換言之,第二黏合層330可將第三重佈線層320黏合至第二半導體晶片210的後表面。第三單元結構300可藉由第二黏合層330黏合至第二單元結構200。
可提供模製層140。模製層140可覆蓋第一單元結構100的側壁、第二單元結構200的側壁及第三單元結構300的側壁。模製層140可延伸至第一半導體晶片110的前表面上,以覆蓋第一重佈線層120。模製層140可接觸與第一重佈線層120連接的外部端子130的側壁。模製層140可隱埋或覆蓋第二連接端子BW2。模製層140可暴露出第三半導體晶片310的後表面。舉例而言,模製層140的最頂端可位於與第三半導體晶片310的後表面相同的水平高度處。在一些實施例中,模製層140的最頂端可與第三半導體晶片310的後表面共面,如圖3A中所示。
圖4A是示出根據本發明概念的一些實施例的半導體元件的剖視圖。圖4B是示出根據本發明概念的一些實施例的半導體元件的平面圖。圖4A對應於沿圖4B所示線D-D’截取的剖視圖。在下文中,將主要闡述以下實施例與圖2A及圖2B所示實施例之間的不同之處。
參照圖4A及圖4B,可提供第一單元結構100。第一單元結構100可包括第一半導體晶片110及設置於第一半導體晶片110的前表面上的第一重佈線層120。第一重佈線層120可包括第一導電圖案122及第一絕緣層124。第一導電圖案122可更包括第三子圖案SP3。第三子圖案SP3可與第一子圖案SP1間隔開。舉例而言,第三子圖案SP3可設置於第一半導體晶片110的前表面的第三區R3上。第三區R3可在第一方向D1上位於第一區R1的側面處。第三子圖案SP3可與第一半導體晶片110電性絕緣。第三子圖案SP3的一部分可被第一絕緣層124暴露出。第二子圖案SP2的暴露部分可為與第一半導體晶片110絕緣的第三連接接墊CP3,且第三子圖案SP3的暴露部分可為與第一半導體晶片110絕緣的第四連接接墊CP4。在一些實施例中,第三子圖案SP3可不電性連接至第一半導體晶片110的任何部件。此外,在一些實施例中,第三連接接墊CP3及第四連接接墊CP4中的每一者可不電性連接至第一半導體晶片110的任何部件。更進一步而言,在一些實施例中,第三區R3可相鄰於第一區R1的側面,如圖4B中所示。
在第二單元結構200上可設置有第三單元結構300’。第三單元結構300’的配置可相似於參照圖2A及圖2B闡述的第三單元結構300的配置。第二單元結構200與第三單元結構300’可在第一方向D1上傾斜地堆疊。當在平面圖中觀察時,第三單元結構300’可堆疊於第二單元結構200上,以在第一方向D1上相對於第二單元結構200發生偏移。換言之,第一單元結構100、第二單元結構200及第三單元結構300’可在水平方向上彼此交替地堆疊。此處,當在平面圖中觀察時,第三單元結構300’可在第一方向D1上自第二半導體晶片210突出,且亦可突出至第一半導體晶片110的第二側壁110b之外。
第三半導體晶片310可設置於第二半導體晶片210的後表面上。第三單元結構300’的第三重佈線層320可包括第三導電圖案322及第三絕緣層324。第三絕緣層324可覆蓋第三半導體晶片310的前表面,但可暴露出第三導電圖案322的一部分(即,第二接墊PAD2)。當在平面圖中觀察時,第二接墊PAD2可在第一方向D1上設置於第三半導體晶片310的前表面的一側部分上。
由於第二單元結構200與第三單元結構300’以階梯形狀堆疊,因此第三半導體晶片310的前表面(或第三單元結構300’的前表面)的一部分可被暴露出。舉例而言,當在平面圖中觀察時,第二接墊PAD2可在第一方向D1上設置於第二半導體晶片210的側面處。第二接墊PAD2可在第三半導體晶片310之下被暴露出。在一些實施例中,第二單元結構200可暴露出第三半導體晶片310的前表面的所述一部分,如圖4A中所示。此外,在一些實施例中,第二接墊PAD2可相鄰於第二半導體晶片210的所述側面,如圖4B中所示。
第三半導體晶片310可電性連接至第一單元結構100的第一重佈線層120。舉例而言,第四連接接墊CP4中的一些第四連接接墊CP4可藉由第二連接端子BW2電性連接至第二接墊PAD2。第二連接端子BW2可為用於配線接合的連接配線。第二連接端子BW2可連接至第一半導體晶片110的前表面上的第四連接接墊CP4中的一些第四連接接墊CP4,且可連接至第三半導體晶片310的前表面上的第二接墊PAD2。此處,上面設置有第三子圖案SP3的第三區R3可相鄰於第一半導體晶片110的第二側壁110b設置,且因此第二連接端子BW2的長度可為短的。
第一連接端子BW1所連接至的第三連接接墊CP3可與第二連接端子BW2所連接至的第四連接接墊CP4絕緣。第二半導體晶片210及第三半導體晶片310可分別連接至在第一重佈線層120中彼此電性絕緣的導電圖案,且因此可增大半導體元件的頻寬。
圖5A是示出根據本發明概念的一些實施例的半導體元件的剖視圖。圖5B是示出根據本發明概念的一些實施例的半導體元件的平面圖。圖5A對應於沿圖5B所示線E-E’截取的剖視圖。在下文中,將主要闡述以下實施例與圖1A及圖1B所示實施例之間的不同之處。
參照圖5A及圖5B,在第一單元結構100上可設置有多個第二單元結構200及200’。
第一單元結構100的第一重佈線層120可包括第一導電圖案122及第一絕緣層124。第一導電圖案122可更包括第三子圖案SP3,如參照圖4A及圖4B所述。上面設置有第三子圖案SP3的第三區R3可在第一方向D1上位於第一區R1的側面處。第二子圖案SP2的被第一絕緣層124暴露出的一部分可為第三連接接墊CP3,且第三子圖案SP3的被第一絕緣層124暴露出的一部分可為第四連接接墊CP4。在一些實施例中,第三區R3可相鄰於第一區R1的所述側面,如圖5B中所示。
如上所述,所述多個第二單元結構200及200’可設置於第一單元結構100上。第二單元結構200及200’中的每一者的組件及佈置可相同於或相似於參照圖1A及圖1B闡述的組件及佈置。然而,第二單元結構200及200’的尺寸(例如,在第一方向D1上的長度)可小於第一單元結構100的尺寸(例如,在第一方向D1上的長度)。舉例而言,第二單元結構200及200’的寬度及長度(或第二半導體晶片210及210’的寬度及長度)可小於第一單元結構100的寬度及長度(或第一半導體晶片110的寬度及長度)。第二單元結構200及200’中的每一者可堆疊於第一單元結構100上,以在第一方向D1上或與第一方向D1相對的方向上傾斜,且該些形狀中的每一者可為在第一方向D1或與第一方向D1相對的方向上向上傾斜的階梯形狀。詳言之,一個第二單元結構200可在側向上突出至第一半導體晶片110的第一側壁110a之外,且另一第二單元結構200’可在側向上突出至第一半導體晶片110的第二側壁110b之外。換言之,當在平面圖中觀察時,第二單元結構200與第二單元結構200’可在彼此相對的方向上相對於第一單元結構100發生偏移。第二單元結構200及200’中的每一者的一部分可與第一單元結構100交疊,且第二單元結構200及200’中的每一者的另一部分可在側向上自第一單元結構100的一個側壁突出。第二單元結構200的頂表面與第二單元結構200’的頂表面可設置於同一水平高度處。第二單元結構200的頂表面及第二單元結構200’的頂表面可設置於與模製層140的最頂端相同的水平高度處且可被模製層140暴露出。在一些實施例中,第二單元結構200的頂表面及第二單元結構200’的頂表面與模製層140的最頂端可彼此共面。
第二單元結構200的第一接墊PAD1及第二單元結構200’的第一接墊PAD1’可被第一單元結構100暴露出。詳言之,一個第二單元結構200的第一接墊PAD1可設置於第一半導體晶片110的第一側壁110a的側面處或相鄰於第一半導體晶片110的第一側壁110a的側面,且另一第二單元結構200’的第一接墊PAD1’可設置於第一半導體晶片110的第二側壁110b的側面處或相鄰於第一半導體晶片110的第二側壁110b的側面。第二單元結構200與第二單元結構200’可在第一單元結構100上彼此間隔開(例如,在第一方向D1上彼此間隔開)。
第二半導體晶片210及210’可電性連接至第一單元結構100的第一重佈線層120。舉例而言,第二單元結構200的第一接墊PAD1及第二單元結構200’的第一接墊PAD1’可分別藉由第一連接端子BW1及第三連接端子BW3電性連接至第三連接接墊CP3及第四連接接墊CP4。第一連接端子BW1及第三連接端子BW3可為用於配線接合的連接配線。第一連接端子BW1可連接至第一半導體晶片110的前表面上的第三連接接墊CP3中的一些第三連接接墊CP3,且第三連接端子BW3可連接至第一半導體晶片110的前表面上的第四連接接墊CP4中的一些第四連接接墊CP4。
第一連接端子BW1所連接至的第三連接接墊CP3可與第三連接端子BW3所連接至的第四連接接墊CP4絕緣。第二半導體晶片210及210’可分別連接至在第一重佈線層120中彼此電性絕緣的導電圖案,且因此可增大半導體元件的頻寬。
在圖5A及圖5B中提供了兩個第二單元結構。然而,本發明概念的實施例並非僅限於此。可提供三個或更多個第二單元結構。圖6A是示出根據本發明概念的一些實施例的半導體元件的剖視圖。圖6B是示出根據本發明概念的一些實施例的半導體元件的平面圖。圖6A對應於沿圖6B所示線F-F’截取的剖視圖。
參照圖6A及圖6B,第一單元結構100的第一半導體晶片110可具有在第一方向D1上彼此相對的第一側壁110a與第二側壁110b,且可具有在第二方向D2上彼此相對的第三側壁110c與第四側壁110d。
第二單元結構200可分別在側向上突出至第一單元結構100上的第一半導體晶片110的第一側壁110a、第二側壁110b、第三側壁110c及第四側壁110d之外。換言之,當在平面圖中觀察時,第二單元結構200中的每一者可在朝向第一半導體晶片110的側壁中的每一者的方向上相對於第一單元結構100發生偏移。第二單元結構200中的每一者的一部分可與第一單元結構100交疊,且第二單元結構200中的每一者的另一部分可在側向上突出至第一單元結構100的一個側壁之外。
第二單元結構200的第一接墊PAD1可自第一單元結構100被暴露出。詳言之,當在平面圖中觀察時,第二單元結構200中的每一者的第一接墊PAD1可設置於第一半導體晶片110的側壁110a、110b、110c及110d中的一者的側面處或相鄰於第一半導體晶片110的側壁110a、110b、110c及110d中的一者的側面。第二單元結構200可在第一單元結構100上彼此間隔開。
第二半導體晶片210可電性連接至第一單元結構100的第一重佈線層120。舉例而言,第二單元結構200的第一接墊PAD1可分別藉由連接端子BW電性連接至第一重佈線層120的第二連接接墊CP2。連接端子BW可為用於配線接合的連接配線。連接端子BW可連接至第一半導體晶片110的前表面上的第二連接接墊CP2中的一些第二連接接墊CP2,且可連接至第二半導體晶片210的前表面上的第一接墊PAD1。
連接端子BW所分別連接至的第二連接接墊CP2可彼此絕緣。換言之,第二半導體晶片210可分別連接至彼此電性絕緣的導電圖案。第二半導體晶片210可分別連接至在第一重佈線層120中彼此電性絕緣的導電圖案,且因此可增大半導體元件的頻寬。
圖7至圖11是示出根據本發明概念的一些實施例的製造半導體元件的方法的剖視圖。
參照圖7,可在載體基板400上設置第二單元結構200。可將第二單元結構200黏合於載體基板400上。可藉由載體黏合層410將第二單元結構200黏合至載體基板400。第二單元結構200可在載體基板400上彼此間隔開。可以使第二半導體晶片210的後表面(即,非主動面)面對載體基板400且第二重佈線層220與載體基板400相對的方式設置第二單元結構200。換言之,在第二單元結構200中,第二重佈線層220可形成於第二半導體晶片210的與載體基板400相對的前表面(即,主動面)上。
參照圖8,可在第二單元結構200上堆疊第一單元結構100。可將第一單元結構100黏合於第二單元結構200上。可藉由第一黏合層230將第一單元結構100黏合至第二單元結構200。可以使第一單元結構100的第一半導體晶片110的後表面(即,非主動面)面對載體基板400且第一單元結構100的第一重佈線層120與載體基板400相對的方式設置第一單元結構100。換言之,在第一單元結構100中,第一重佈線層120可形成於第一半導體晶片110的與載體基板400相對的前表面(即,主動面)上。
第一重佈線層120的第一導電圖案122可包括電性連接至第一半導體晶片110的第一子圖案SP1及與第一半導體晶片110電性絕緣的第二子圖案SP2。第一子圖案SP1的被第一絕緣層124暴露出的一部分可被定義為第一連接接墊CP1且可為電性連接至第一半導體晶片110的接墊。第二子圖案SP2的被第一絕緣層124暴露出的一部分可被定義為第二連接接墊CP2且可為與第一半導體晶片110絕緣的接墊。
此處,當在平面圖中觀察時,第一單元結構100可被設置成在與第一方向D1相對的方向上相對於第二單元結構200發生偏移。因此,第二單元結構200的第二重佈線層220的第一接墊PAD1可被暴露出。
參照圖9,可藉由配線接合製程將第一單元結構100連接至第二單元結構200。舉例而言,可藉由使用第一連接端子BW1將第一單元結構100的第二連接接墊CP2電性連接至第二單元結構200的第一接墊PAD1。
此後,可將外部端子130黏合至第一單元結構100。外部端子130可設置於第一重佈線層120的第一連接接墊CP1及第二連接接墊CP2中的一些第二連接接墊CP2上。
在一些實施例中,可在配線接合製程之前執行將外部端子130黏合至第一單元結構100的製程。在一些實施例中,外部端子130所黏合至的第一單元結構100可在堆疊於第二單元結構200上之前設置。
參照圖10,可在載體基板400上形成模製層140。舉例而言,可將環氧模製化合物(EMC)材料施加至載體基板400的頂表面上以隱埋或覆蓋第一單元結構100、第二單元結構200及第一連接端子BW1,且可使EMC材料硬化以形成模製層140。模製層140可覆蓋第二單元結構200的頂表面及側壁以及第一單元結構100的頂表面及側壁。第一連接端子BW1可隱埋於模製層140中。此處,外部端子130的一些部分可在模製層140上被暴露出。
此後,可移除載體基板400及載體黏合層410。可藉由移除載體基板400及載體黏合層410暴露出第二半導體晶片210的後表面。
參照圖11,可對模製層140進行切割以將半導體元件彼此分離,半導體元件中的每一者包括第一單元結構100及第二單元結構200。舉例而言,可沿鋸切線SL對模製層140執行單體化製程。換言之,由於模製層140被鋸切,因此第一單元結構100可彼此分離且第二單元結構200可彼此分離,進而製造出半導體元件。半導體元件中的每一者可實質上相同於參照圖1A闡述的半導體元件。
根據本發明概念的實施例,可使用配線接合製程對堆疊的單元結構100與單元結構200進行電性連接。換言之,可能不需要藉由高成本製程形成的組件(例如,穿孔)對單元結構100與單元結構200進行電性連接。因此,根據本發明概念的實施例的製造半導體元件的方法可簡化製程且可降低成本。
根據本發明概念的實施例,可提供以下半導體元件:所述半導體元件不需要用於對第二半導體晶片進行電性連接及重佈線的附加組件,但結構簡單且有利於小型化。
另外,根據本發明概念的實施例,半導體元件的頻寬可得到增大。根據本發明概念的實施例,半導體元件的處理能力可得到提高。
另外,根據本發明概念的實施例,第二半導體晶片與外部端子之間的電性連接可為短的,且半導體元件的電性特性可得到改善。
根據本發明概念的實施例,可不需要藉由高成本製造製程形成的組件(例如,穿孔),且因此製造製程可簡單且便宜,且可提供具有簡單結構的半導體元件。
儘管已參照示例性實施例闡述了本發明概念,然而對於熟習此項技術者而言將顯而易見的是,可在不背離本發明概念的範圍的條件下進行各種改變及修改。因此,應理解,以上實施例並非限制性的,而是例示性的。因此,本發明概念的範圍應由以下申請專利範圍及其等效範圍的最廣泛的可允許解釋決定,且不應受前述說明約束或限制。
100:第一單元結構/單元結構
110:第一半導體晶片
110a:第一側壁/側壁
110b:第二側壁/側壁
110c:第三側壁/側壁
110d:第四側壁/側壁
120:第一重佈線層
122:第一導電圖案
124:第一絕緣層
130:外部端子
132:第一端子
134:第二端子
140:模製層
200:第二單元結構/單元結構
200’:第二單元結構
210、210’:第二半導體晶片
220:第二重佈線層
222:第二導電圖案
224:第二絕緣層
230:第一黏合層
300、300’:第三單元結構
310:第三半導體晶片
320:第三重佈線層
322:第三導電圖案
324:第三絕緣層
330:第二黏合層
400:載體基板
410:載體黏合層
A-A’、B-B’、C-C’、D-D’、E-E’、F-F’:線
BW:連接端子
BW1:第一連接端子
BW2:第二連接端子
BW3:第三連接端子
CP1:第一連接接墊
CP2:第二連接接墊
CP3:第三連接接墊
CP4:第四連接接墊
d1:第一距離
d2:第二距離
d3:第三距離
D1:第一方向
D2:第二方向
D3:第三方向
PAD1、PAD1’:第一接墊
PAD2:第二接墊
R1:第一區
R2:第二區
R3:第三區
SCP1:第一子連接接墊
SCP2:第二子連接接墊
SL:鋸切線
SP1:第一子圖案/子圖案
SP2:第二子圖案/子圖案
SP3:第三子圖案
鑒於附圖及隨附的詳細說明,本發明概念將變得更加顯而易見。
圖1A是示出根據本發明概念的一些實施例的半導體元件的剖視圖。
圖1B是示出根據本發明概念的一些實施例的半導體元件的平面圖。
圖2A、圖3A、圖4A、圖5A及圖6A是示出根據本發明概念的一些實施例的半導體元件的剖視圖。
圖2B、圖3B、圖4B、圖5B及圖6B是示出根據本發明概念的一些實施例的半導體元件的平面圖。
圖7至圖11是示出根據本發明概念的一些實施例的製造半導體元件的方法的剖視圖。
100:第一單元結構/單元結構
110:第一半導體晶片
110a:第一側壁/側壁
110b:第二側壁/側壁
120:第一重佈線層
122:第一導電圖案
124:第一絕緣層
130:外部端子
132:第一端子
134:第二端子
140:模製層
200:第二單元結構/單元結構
210:第二半導體晶片
220:第二重佈線層
222:第二導電圖案
224:第二絕緣層
230:第一黏合層
A-A’:線
BW1:第一連接端子
d1:第一距離
d2:第二距離
d3:第三距離
D1:第一方向
D2:第二方向
D3:第三方向
SP1:第一子圖案/子圖案
SP2:第二子圖案/子圖案
Claims (20)
- 一種半導體元件,包括: 第一半導體晶片; 第一重佈線層,位於所述第一半導體晶片的底表面上; 第二半導體晶片,位於所述第一半導體晶片上; 第二重佈線層,位於所述第二半導體晶片的底表面上; 模製層,在所述第二半導體晶片的側壁、所述第一半導體晶片的側壁及所述第一半導體晶片的所述底表面上延伸;以及 外部端子,延伸穿過所述模製層且電性連接至所述第一重佈線層, 其中所述第二重佈線層包括不與所述第一半導體晶片交疊的暴露部分, 其中所述第一重佈線層包括電性連接至所述第一半導體晶片的第一導電圖案及與所述第一半導體晶片電性絕緣的第二導電圖案,且 其中所述第二重佈線層的所述暴露部分與所述第一重佈線層的所述第二導電圖案藉由第一連接配線電性連接至彼此。
- 如請求項1所述的半導體元件,其中所述第一半導體晶片的所述側壁包括第一側壁及與所述第一側壁相對的第二側壁,且所述第一半導體晶片與所述第二半導體晶片在垂直方向上彼此間隔開, 其中所述第二半導體晶片在水平方向上突出至所述第一半導體晶片的所述第一側壁之外, 其中所述第二導電圖案相鄰於所述第一半導體晶片的所述第一側壁,且 其中所述第一導電圖案相鄰於所述第一半導體晶片的所述第二側壁。
- 如請求項1所述的半導體元件,其中所述第一連接配線隱埋於所述模製層中。
- 如請求項3所述的半導體元件,其中自所述第一重佈線層的底表面至所述第一連接配線的最底端的第一距離短於自所述第一重佈線層的所述底表面至所述模製層的最底端的第二距離。
- 如請求項1所述的半導體元件,其中所述第二半導體晶片的頂表面與所述模製層的最頂端共面。
- 如請求項1所述的半導體元件,其中所述外部端子包括: 第一端子,位於所述第一導電圖案上且電性連接至所述第一半導體晶片;以及 第二端子,位於所述第二導電圖案上且電性連接至所述第二半導體晶片。
- 如請求項1所述的半導體元件,更包括: 第三半導體晶片,位於所述第二半導體晶片上;以及 第三重佈線層,位於所述第三半導體晶片的底表面上, 其中所述第三重佈線層包括不與所述第二半導體晶片交疊的暴露部分,且 其中所述第三重佈線層的所述暴露部分藉由第二連接配線電性連接至所述第一重佈線層。
- 如請求項7所述的半導體元件,其中所述第一半導體晶片、所述第二半導體晶片及所述第三半導體晶片共同界定具有階梯形狀的偏置堆疊結構。
- 如請求項7所述的半導體元件,其中所述第一半導體晶片的所述側壁包括第一側壁及與所述第一側壁相對的第二側壁,且所述第一半導體晶片、所述第二半導體晶片及所述第三半導體晶片在垂直方向上彼此間隔開, 其中所述第二半導體晶片在水平方向上突出至所述第一半導體晶片的所述第一側壁之外,且 其中所述第三半導體晶片在水平方向上突出至所述第一半導體晶片的所述第二側壁之外。
- 如請求項7所述的半導體元件,其中所述第一重佈線層更包括與所述第一半導體晶片電性絕緣且電性連接至所述第二連接配線的第三導電圖案。
- 如請求項1所述的半導體元件,更包括: 第四半導體晶片,位於所述第一半導體晶片上且與所述第二半導體晶片間隔開;以及 第四重佈線層,位於所述第四半導體晶片的底表面上, 其中所述第一半導體晶片與所述第四半導體晶片共同界定偏置堆疊結構,且所述第一半導體晶片暴露出所述第四重佈線層的暴露部分,且 其中所述第四重佈線層的所述暴露部分藉由第三連接配線電性連接至所述第一重佈線層。
- 如請求項11所述的半導體元件,其中所述第一半導體晶片的所述側壁包括第一側壁及與所述第一側壁相對的第二側壁,且所述第一半導體晶片與所述第二半導體晶片在垂直方向上彼此間隔開, 其中所述第二半導體晶片在水平方向上突出至所述第一半導體晶片的所述第一側壁之外,且 其中所述第四半導體晶片在水平方向上突出至所述第一半導體晶片的所述第二側壁之外。
- 如請求項12所述的半導體元件,其中所述第一重佈線層更包括與所述第一半導體晶片電性絕緣且電性連接至所述第三連接配線的第四導電圖案,且 其中所述第四導電圖案相鄰於所述第一半導體晶片的所述第二側壁。
- 如請求項1所述的半導體元件,其中自所述第一重佈線層的底表面至所述模製層的底表面的距離介於自所述第一重佈線層的所述底表面至所述外部端子的底端的距離的約10%至50%的範圍內。
- 一種半導體元件,包括: 第一半導體晶片,包括第一主動面及與所述第一主動面相對的第一非主動面; 第一接墊,位於所述第一主動面上; 第二半導體晶片,位於所述第一半導體晶片上,其中所述第二半導體晶片包括面對所述第一半導體晶片的所述第一非主動面的第二主動面,且其中所述第二半導體晶片在垂直方向上與所述第一半導體晶片間隔開且在側向上突出至所述第一半導體晶片的第一側之外,並且所述第一半導體晶片暴露出所述第二半導體晶片的所述第二主動面的暴露部分; 第二接墊,位於所述第二半導體晶片的所述第二主動面的所述暴露部分上; 外部端子,位於所述第一半導體晶片的所述第一主動面上;以及 模製層,自所述第一半導體晶片的側壁及所述第二半導體晶片的側壁延伸至所述第一半導體晶片的所述第一主動面上, 其中所述模製層至少局部地覆蓋所述外部端子的側面,且 其中所述第一接墊與所述第二接墊藉由第一連接配線電性連接至彼此。
- 如請求項15所述的半導體元件,其中所述第一接墊包括: 第一連接接墊,電性連接至所述第一半導體晶片;以及 第二連接接墊,電性連接至所述第一連接配線, 其中所述第二連接接墊與所述第一半導體晶片電性絕緣。
- 如請求項16所述的半導體元件,其中所述第一半導體晶片更包括與所述第一半導體晶片的所述第一側相對的第二側, 其中所述第一半導體晶片的所述第一主動面包括與所述第一半導體晶片的所述第二側相鄰的第一區及與所述第一半導體晶片的所述第一側相鄰的第二區, 其中所述第一連接接墊位於所述第一區上,且 其中所述第二連接接墊位於所述第二區上。
- 如請求項15所述的半導體元件,其中所述第二半導體晶片包括多個第二半導體晶片,且 其中所述多個第二半導體晶片在所述第一半導體晶片的所述第一非主動面上彼此間隔開。
- 如請求項15所述的半導體元件,其中所述第一連接配線隱埋於所述模製層中,且 其中自所述第一半導體晶片的所述第一主動面至所述第一連接配線的最底端的第一距離短於自所述第一半導體晶片的所述第一主動面至所述模製層的最底端的第二距離。
- 一種半導體元件,包括: 第一半導體晶片; 第一接墊,位於所述第一半導體晶片的底表面上; 第二半導體晶片,位於所述第一半導體晶片上,其中所述第二半導體晶片中的每一者突出至所述第一半導體晶片的相應的側之外且包括底表面,所述第二半導體晶片中的每一者的所述底表面包括被所述第一半導體晶片暴露出的暴露部分; 第二接墊,其中所述第二接墊中的每一者位於所述第二半導體晶片中的相應的一者的所述底表面的所述暴露部分上; 第三接墊,位於所述第一半導體晶片的所述底表面上,其中所述第三接墊與所述第一接墊間隔開; 連接端子,所述連接端子中的每一者將所述第一接墊中的一者電性連接至所述第二接墊中的一者; 外部端子,位於所述第一半導體晶片的所述底表面上;以及 模製層,覆蓋所述第一半導體晶片的所述底表面及所述第二半導體晶片的所述底表面, 其中所述外部端子中的每一者電性連接至所述第一接墊及所述第三接墊中的相應的一者, 其中所述模製層接觸所述外部端子的側面, 其中自所述第一半導體晶片的所述底表面至所述模製層的底表面的距離介於自所述第一半導體晶片的所述底表面至所述外部端子中的一者的底端的距離的約10%至50%的範圍內,且 其中所述第二半導體晶片中的最上一個半導體晶片的頂表面與所述模製層的最頂端共面。
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CN112133679A (zh) | 2020-12-25 |
US20220149013A1 (en) | 2022-05-12 |
US11830853B2 (en) | 2023-11-28 |
TW202101729A (zh) | 2021-01-01 |
US11257793B2 (en) | 2022-02-22 |
KR20210000812A (ko) | 2021-01-06 |
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