TWI780114B - 為cmp位置特定研磨設計的螺旋及同心圓移動 - Google Patents

為cmp位置特定研磨設計的螺旋及同心圓移動 Download PDF

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Publication number
TWI780114B
TWI780114B TW107105588A TW107105588A TWI780114B TW I780114 B TWI780114 B TW I780114B TW 107105588 A TW107105588 A TW 107105588A TW 107105588 A TW107105588 A TW 107105588A TW I780114 B TWI780114 B TW I780114B
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TW
Taiwan
Prior art keywords
grinding
substrate
polishing
polishing pad
pad assembly
Prior art date
Application number
TW107105588A
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English (en)
Chinese (zh)
Other versions
TW201835998A (zh
Inventor
永豪 劉
志忠 卓
查爾斯Ｃ 蓋瑞森
政勳 吳
敬儀 向
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201835998A publication Critical patent/TW201835998A/zh
Application granted granted Critical
Publication of TWI780114B publication Critical patent/TWI780114B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
    • B24B13/005—Blocking means, chucks or the like; Alignment devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Dental Tools And Instruments Or Auxiliary Dental Instruments (AREA)
TW107105588A 2017-03-06 2018-02-14 為cmp位置特定研磨設計的螺旋及同心圓移動 TWI780114B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762467672P 2017-03-06 2017-03-06
US62/467,672 2017-03-06

Publications (2)

Publication Number Publication Date
TW201835998A TW201835998A (zh) 2018-10-01
TWI780114B true TWI780114B (zh) 2022-10-11

Family

ID=63356879

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107105588A TWI780114B (zh) 2017-03-06 2018-02-14 為cmp位置特定研磨設計的螺旋及同心圓移動

Country Status (6)

Country Link
US (2) US20180250788A1 (https=)
JP (1) JP7162000B2 (https=)
KR (1) KR102526545B1 (https=)
CN (1) CN110352115A (https=)
TW (1) TWI780114B (https=)
WO (1) WO2018164804A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3640972A1 (en) * 2018-10-18 2020-04-22 ASML Netherlands B.V. System and method for facilitating chemical mechanical polishing
US11890717B2 (en) 2018-12-26 2024-02-06 Applied Materials, Inc. Polishing system with platen for substrate edge control
TWI771668B (zh) 2019-04-18 2022-07-21 美商應用材料股份有限公司 Cmp期間基於溫度的原位邊緣不對稱校正
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
TWI797501B (zh) * 2019-11-22 2023-04-01 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
CN113411486B (zh) 2020-03-16 2022-05-17 浙江宇视科技有限公司 云台摄像机控制方法、装置、云台摄像机和存储介质
US20210323117A1 (en) * 2020-04-16 2021-10-21 Applied Materials, Inc. High throughput polishing modules and modular polishing systems
US11919120B2 (en) 2021-02-25 2024-03-05 Applied Materials, Inc. Polishing system with contactless platen edge control
US20230024009A1 (en) * 2021-07-20 2023-01-26 Applied Materials, Inc. Face-up wafer edge polishing apparatus
US12519020B2 (en) * 2022-06-17 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
WO2024015530A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Monitoring thickness in face-up polishing
CN119526128B (zh) * 2023-08-29 2026-02-13 中国联合网络通信集团有限公司 一种平面打磨的方法、装置及可读存储介质
US20260070182A1 (en) * 2024-09-11 2026-03-12 Service Support Specialties, Inc. Chemical mechanical planarization apparatus and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103846770A (zh) * 2012-12-06 2014-06-11 台湾积体电路制造股份有限公司 抛光系统和抛光方法
TW201422375A (zh) * 2012-11-21 2014-06-16 Applied Materials Inc 多平臺多頭之研磨架構及具有循序感測器之研磨系統
US20160016280A1 (en) * 2014-07-17 2016-01-21 Applied Materials, Inc. Orbital polishing with small pad

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5599423A (en) * 1995-06-30 1997-02-04 Applied Materials, Inc. Apparatus and method for simulating and optimizing a chemical mechanical polishing system
US6976901B1 (en) * 1999-10-27 2005-12-20 Strasbaugh In situ feature height measurement
US6629874B1 (en) * 1999-10-27 2003-10-07 Strasbaugh Feature height measurement during CMP
US6547651B1 (en) * 1999-11-10 2003-04-15 Strasbaugh Subaperture chemical mechanical planarization with polishing pad conditioning
US6340326B1 (en) * 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6705930B2 (en) * 2000-01-28 2004-03-16 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
CN100433269C (zh) * 2000-05-12 2008-11-12 多平面技术公司 抛光装置以及与其一起使用的基片托架
US6896583B2 (en) * 2001-02-06 2005-05-24 Agere Systems, Inc. Method and apparatus for conditioning a polishing pad
US6561881B2 (en) * 2001-03-15 2003-05-13 Oriol Inc. System and method for chemical mechanical polishing using multiple small polishing pads
JP3970561B2 (ja) * 2001-07-10 2007-09-05 株式会社荏原製作所 基板保持装置及び基板研磨装置
JP2003092274A (ja) * 2001-09-19 2003-03-28 Nikon Corp 加工装置および方法、この装置を用いた半導体デバイス製造方法およびこの方法により製造される半導体デバイス
DE10207379A1 (de) * 2002-02-21 2003-09-04 Asphericon Gmbh Verfahren zum Schleifen und Polieren von Freiformflächen, insbesondere von rotationssymmetrischen asphärischen optischen Linsen
JP2004074314A (ja) 2002-08-12 2004-03-11 Nikon Corp 研磨体、この研磨体を備えた研磨装置、この研磨装置を用いた半導体デバイス製造方法及びこの半導体デバイス製造方法により製造された半導体デバイス
US7011566B2 (en) * 2002-08-26 2006-03-14 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US7018269B2 (en) * 2003-06-18 2006-03-28 Lam Research Corporation Pad conditioner control using feedback from a measured polishing pad roughness level
JP4597634B2 (ja) * 2004-11-01 2010-12-15 株式会社荏原製作所 トップリング、基板の研磨装置及び研磨方法
KR101011788B1 (ko) * 2004-11-01 2011-02-07 가부시키가이샤 에바라 세이사꾸쇼 톱링, 폴리싱장치 및 폴리싱방법
US7312154B2 (en) * 2005-12-20 2007-12-25 Corning Incorporated Method of polishing a semiconductor-on-insulator structure
US7452264B2 (en) * 2006-06-27 2008-11-18 Applied Materials, Inc. Pad cleaning method
JP5037974B2 (ja) * 2007-03-14 2012-10-03 株式会社岡本工作機械製作所 研磨加工ステージにおける半導体基板の監視機器および監視方法
JP5390750B2 (ja) * 2007-03-30 2014-01-15 ラムバス・インコーポレーテッド 研磨装置、および研磨パッド再生処理方法
JP2009194134A (ja) * 2008-02-14 2009-08-27 Ebara Corp 研磨方法及び研磨装置
KR101004435B1 (ko) * 2008-11-28 2010-12-28 세메스 주식회사 기판 연마 장치 및 이를 이용한 기판 연마 방법
DE102009004787A1 (de) * 2009-01-13 2010-07-15 Schneider Gmbh & Co. Kg Vorrichtung und Verfahren zum Polieren von Linsen
US8148266B2 (en) * 2009-11-30 2012-04-03 Corning Incorporated Method and apparatus for conformable polishing
US9138860B2 (en) * 2010-04-20 2015-09-22 Applied Materials, Inc. Closed-loop control for improved polishing pad profiles
TWI692385B (zh) 2014-07-17 2020-05-01 美商應用材料股份有限公司 化學機械硏磨所用的方法、系統與硏磨墊
JP2016058724A (ja) 2014-09-11 2016-04-21 株式会社荏原製作所 処理モジュール、処理装置、及び、処理方法
US10593554B2 (en) * 2015-04-14 2020-03-17 Jun Yang Method and apparatus for within-wafer profile localized tuning
DE102016006741A1 (de) * 2016-06-06 2017-12-07 Schneider Gmbh & Co. Kg Werkzeug, Vorrichtung und Verfahren zum Polieren von Linsen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201422375A (zh) * 2012-11-21 2014-06-16 Applied Materials Inc 多平臺多頭之研磨架構及具有循序感測器之研磨系統
CN103846770A (zh) * 2012-12-06 2014-06-11 台湾积体电路制造股份有限公司 抛光系统和抛光方法
US20160016280A1 (en) * 2014-07-17 2016-01-21 Applied Materials, Inc. Orbital polishing with small pad

Also Published As

Publication number Publication date
TW201835998A (zh) 2018-10-01
KR20190117795A (ko) 2019-10-16
US20180250788A1 (en) 2018-09-06
CN110352115A (zh) 2019-10-18
WO2018164804A1 (en) 2018-09-13
KR102526545B1 (ko) 2023-04-28
JP7162000B2 (ja) 2022-10-27
JP2020511785A (ja) 2020-04-16
US20200282506A1 (en) 2020-09-10

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