CN110352115A - 为cmp位置特定研磨(lsp)设计的螺旋及同心圆移动 - Google Patents

为cmp位置特定研磨(lsp)设计的螺旋及同心圆移动 Download PDF

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Publication number
CN110352115A
CN110352115A CN201880015033.XA CN201880015033A CN110352115A CN 110352115 A CN110352115 A CN 110352115A CN 201880015033 A CN201880015033 A CN 201880015033A CN 110352115 A CN110352115 A CN 110352115A
Authority
CN
China
Prior art keywords
grinding
substrate
motion
polishing pad
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880015033.XA
Other languages
English (en)
Chinese (zh)
Inventor
E·刘
卓志忠
C·C·加勒森
吴政勋
向敬仪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN110352115A publication Critical patent/CN110352115A/zh
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
    • B24B13/005—Blocking means, chucks or the like; Alignment devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Dental Tools And Instruments Or Auxiliary Dental Instruments (AREA)
CN201880015033.XA 2017-03-06 2018-02-08 为cmp位置特定研磨(lsp)设计的螺旋及同心圆移动 Pending CN110352115A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762467672P 2017-03-06 2017-03-06
US62/467,672 2017-03-06
PCT/US2018/017358 WO2018164804A1 (en) 2017-03-06 2018-02-08 Spiral and concentric movement designed for cmp location specific polish (lsp)

Publications (1)

Publication Number Publication Date
CN110352115A true CN110352115A (zh) 2019-10-18

Family

ID=63356879

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880015033.XA Pending CN110352115A (zh) 2017-03-06 2018-02-08 为cmp位置特定研磨(lsp)设计的螺旋及同心圆移动

Country Status (6)

Country Link
US (2) US20180250788A1 (https=)
JP (1) JP7162000B2 (https=)
KR (1) KR102526545B1 (https=)
CN (1) CN110352115A (https=)
TW (1) TWI780114B (https=)
WO (1) WO2018164804A1 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN113524020A (zh) * 2020-04-16 2021-10-22 应用材料公司 高产量抛光模块以及模块化抛光系统

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EP3640972A1 (en) * 2018-10-18 2020-04-22 ASML Netherlands B.V. System and method for facilitating chemical mechanical polishing
US11890717B2 (en) 2018-12-26 2024-02-06 Applied Materials, Inc. Polishing system with platen for substrate edge control
TWI771668B (zh) 2019-04-18 2022-07-21 美商應用材料股份有限公司 Cmp期間基於溫度的原位邊緣不對稱校正
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
TWI797501B (zh) * 2019-11-22 2023-04-01 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
CN113411486B (zh) 2020-03-16 2022-05-17 浙江宇视科技有限公司 云台摄像机控制方法、装置、云台摄像机和存储介质
US11919120B2 (en) 2021-02-25 2024-03-05 Applied Materials, Inc. Polishing system with contactless platen edge control
US20230024009A1 (en) * 2021-07-20 2023-01-26 Applied Materials, Inc. Face-up wafer edge polishing apparatus
US12519020B2 (en) * 2022-06-17 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
WO2024015530A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Monitoring thickness in face-up polishing
CN119526128B (zh) * 2023-08-29 2026-02-13 中国联合网络通信集团有限公司 一种平面打磨的方法、装置及可读存储介质
US20260070182A1 (en) * 2024-09-11 2026-03-12 Service Support Specialties, Inc. Chemical mechanical planarization apparatus and method

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US20010012751A1 (en) * 2000-01-28 2001-08-09 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
TW471994B (en) * 2000-01-28 2002-01-11 Lam Res Corp System and method for controlled polishing and planarization of semiconductor wafers
CN1440321A (zh) * 2000-05-12 2003-09-03 多平面技术公司 具有独立限位环和多区域压力控制结构的气动隔膜式抛光头及其使用方法
US6629874B1 (en) * 1999-10-27 2003-10-07 Strasbaugh Feature height measurement during CMP
CN1525900A (zh) * 2001-07-10 2004-09-01 ������������ʽ���� 基片抛光机
US6976901B1 (en) * 1999-10-27 2005-12-20 Strasbaugh In situ feature height measurement
CN101336471A (zh) * 2005-12-20 2008-12-31 康宁股份有限公司 对绝缘体上半导体结构进行抛光的方法
TW200946280A (en) * 2008-02-14 2009-11-16 Ebara Corp Method and apparatus for polishing object
CN101585164A (zh) * 2004-11-01 2009-11-25 株式会社荏原制作所 抛光设备
CN101745865A (zh) * 2008-11-28 2010-06-23 细美事有限公司 基材抛光设备和使用该设备抛光基材的方法
CN102630194A (zh) * 2009-11-30 2012-08-08 康宁股份有限公司 用于适应性抛光的方法和设备
CN106463383A (zh) * 2014-07-17 2017-02-22 应用材料公司 用于化学机械研磨的方法、系统与研磨垫

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5599423A (en) * 1995-06-30 1997-02-04 Applied Materials, Inc. Apparatus and method for simulating and optimizing a chemical mechanical polishing system
US6976901B1 (en) * 1999-10-27 2005-12-20 Strasbaugh In situ feature height measurement
US6629874B1 (en) * 1999-10-27 2003-10-07 Strasbaugh Feature height measurement during CMP
US20010012751A1 (en) * 2000-01-28 2001-08-09 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
TW471994B (en) * 2000-01-28 2002-01-11 Lam Res Corp System and method for controlled polishing and planarization of semiconductor wafers
CN1440321A (zh) * 2000-05-12 2003-09-03 多平面技术公司 具有独立限位环和多区域压力控制结构的气动隔膜式抛光头及其使用方法
CN1525900A (zh) * 2001-07-10 2004-09-01 ������������ʽ���� 基片抛光机
CN101585164A (zh) * 2004-11-01 2009-11-25 株式会社荏原制作所 抛光设备
CN101336471A (zh) * 2005-12-20 2008-12-31 康宁股份有限公司 对绝缘体上半导体结构进行抛光的方法
TW200946280A (en) * 2008-02-14 2009-11-16 Ebara Corp Method and apparatus for polishing object
CN101745865A (zh) * 2008-11-28 2010-06-23 细美事有限公司 基材抛光设备和使用该设备抛光基材的方法
CN102630194A (zh) * 2009-11-30 2012-08-08 康宁股份有限公司 用于适应性抛光的方法和设备
CN106463383A (zh) * 2014-07-17 2017-02-22 应用材料公司 用于化学机械研磨的方法、系统与研磨垫

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113524020A (zh) * 2020-04-16 2021-10-22 应用材料公司 高产量抛光模块以及模块化抛光系统

Also Published As

Publication number Publication date
TW201835998A (zh) 2018-10-01
KR20190117795A (ko) 2019-10-16
TWI780114B (zh) 2022-10-11
US20180250788A1 (en) 2018-09-06
WO2018164804A1 (en) 2018-09-13
KR102526545B1 (ko) 2023-04-28
JP7162000B2 (ja) 2022-10-27
JP2020511785A (ja) 2020-04-16
US20200282506A1 (en) 2020-09-10

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