KR102526545B1 - Cmp 위치 특정 연마(lsp)를 위해 설계된 나선형 및 동심 이동 - Google Patents

Cmp 위치 특정 연마(lsp)를 위해 설계된 나선형 및 동심 이동 Download PDF

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Publication number
KR102526545B1
KR102526545B1 KR1020197029276A KR20197029276A KR102526545B1 KR 102526545 B1 KR102526545 B1 KR 102526545B1 KR 1020197029276 A KR1020197029276 A KR 1020197029276A KR 20197029276 A KR20197029276 A KR 20197029276A KR 102526545 B1 KR102526545 B1 KR 102526545B1
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South Korea
Prior art keywords
polishing
substrate
motion
support arm
polishing pad
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Korean (ko)
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KR20190117795A (ko
Inventor
에릭 라우
치 충 초
찰스 씨. 가렛슨
정훈 오
킹 이 흥
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어플라이드 머티어리얼스, 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
    • B24B13/005—Blocking means, chucks or the like; Alignment devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • H01L21/30625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Dental Tools And Instruments Or Auxiliary Dental Instruments (AREA)
KR1020197029276A 2017-03-06 2018-02-08 Cmp 위치 특정 연마(lsp)를 위해 설계된 나선형 및 동심 이동 Active KR102526545B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762467672P 2017-03-06 2017-03-06
US62/467,672 2017-03-06
PCT/US2018/017358 WO2018164804A1 (en) 2017-03-06 2018-02-08 Spiral and concentric movement designed for cmp location specific polish (lsp)

Publications (2)

Publication Number Publication Date
KR20190117795A KR20190117795A (ko) 2019-10-16
KR102526545B1 true KR102526545B1 (ko) 2023-04-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197029276A Active KR102526545B1 (ko) 2017-03-06 2018-02-08 Cmp 위치 특정 연마(lsp)를 위해 설계된 나선형 및 동심 이동

Country Status (6)

Country Link
US (2) US20180250788A1 (https=)
JP (1) JP7162000B2 (https=)
KR (1) KR102526545B1 (https=)
CN (1) CN110352115A (https=)
TW (1) TWI780114B (https=)
WO (1) WO2018164804A1 (https=)

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EP3640972A1 (en) * 2018-10-18 2020-04-22 ASML Netherlands B.V. System and method for facilitating chemical mechanical polishing
US11890717B2 (en) 2018-12-26 2024-02-06 Applied Materials, Inc. Polishing system with platen for substrate edge control
TWI771668B (zh) 2019-04-18 2022-07-21 美商應用材料股份有限公司 Cmp期間基於溫度的原位邊緣不對稱校正
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
TWI797501B (zh) * 2019-11-22 2023-04-01 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
CN113411486B (zh) 2020-03-16 2022-05-17 浙江宇视科技有限公司 云台摄像机控制方法、装置、云台摄像机和存储介质
US20210323117A1 (en) * 2020-04-16 2021-10-21 Applied Materials, Inc. High throughput polishing modules and modular polishing systems
US11919120B2 (en) 2021-02-25 2024-03-05 Applied Materials, Inc. Polishing system with contactless platen edge control
US20230024009A1 (en) * 2021-07-20 2023-01-26 Applied Materials, Inc. Face-up wafer edge polishing apparatus
US12519020B2 (en) * 2022-06-17 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
WO2024015530A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Monitoring thickness in face-up polishing
CN119526128B (zh) * 2023-08-29 2026-02-13 中国联合网络通信集团有限公司 一种平面打磨的方法、装置及可读存储介质
US20260070182A1 (en) * 2024-09-11 2026-03-12 Service Support Specialties, Inc. Chemical mechanical planarization apparatus and method

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JP2010130022A (ja) 2008-11-28 2010-06-10 Semes Co Ltd 基板研磨装置、及びそれを利用する基板研磨方法
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WO2016010866A1 (en) * 2014-07-17 2016-01-21 Applied Materials, Inc. Method, system and polishing pad for chemical mechancal polishing

Also Published As

Publication number Publication date
TW201835998A (zh) 2018-10-01
KR20190117795A (ko) 2019-10-16
TWI780114B (zh) 2022-10-11
US20180250788A1 (en) 2018-09-06
CN110352115A (zh) 2019-10-18
WO2018164804A1 (en) 2018-09-13
JP7162000B2 (ja) 2022-10-27
JP2020511785A (ja) 2020-04-16
US20200282506A1 (en) 2020-09-10

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