TWI777625B - Laser power measurement device - Google Patents
Laser power measurement device Download PDFInfo
- Publication number
- TWI777625B TWI777625B TW110122530A TW110122530A TWI777625B TW I777625 B TWI777625 B TW I777625B TW 110122530 A TW110122530 A TW 110122530A TW 110122530 A TW110122530 A TW 110122530A TW I777625 B TWI777625 B TW I777625B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- incident
- receiving surface
- laser
- sensor
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title abstract description 10
- 230000003287 optical effect Effects 0.000 claims description 100
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0403—Mechanical elements; Supports for optical elements; Scanning arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
- G11B7/1263—Power control during transducing, e.g. by monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Lasers (AREA)
Abstract
為了提供一種雷射功率測量裝置,其可以抑制能量損失並實現省空間化。 具有供雷射束入射之受光面之第1感測器,係測定入射到受光面上之雷射束的平均功率。配置在來自第1感測器的受光面之散射光所入射之位置上之第2感測器,係測定所入射之雷射束的峰值功率。In order to provide a laser power measurement device that can suppress energy loss and achieve space saving. The first sensor, which has a light-receiving surface on which the laser beam is incident, measures the average power of the laser beam incident on the light-receiving surface. The second sensor, which is arranged at the position where the scattered light from the light-receiving surface of the first sensor is incident, measures the peak power of the incident laser beam.
Description
本發明有關雷射功率測量裝置。 本申請案係主張基於2020年7月3日申請之日本專利申請第2020-115642號的優先權。該日本申請案的全部內容係藉由參閱而援用於本說明書中。The present invention relates to a laser power measuring device. This application claims priority based on Japanese Patent Application No. 2020-115642 filed on July 3, 2020. The entire contents of the Japanese application are incorporated in this specification by reference.
為了偵測雷射振盪器的輸出變動或峰值功率未達到規定值之弱脈衝的產生,在雷射振盪器的出口配置功率計及光檢測器。在使雷射束入射到處理對象物之期間也是,為了偵測輸出變動或弱脈衝,在雷射束的路徑上配置射束分離器,而將雷射束的一部分引導至功率計及光檢測器。經射束分離器分支後之雷射束的能量通常為原始雷射束的能量的2%~5%左右。In order to detect the output variation of the laser oscillator or the generation of weak pulses whose peak power does not reach the specified value, a power meter and a photodetector are arranged at the outlet of the laser oscillator. Even while the laser beam is incident on the object to be processed, in order to detect output fluctuations or weak pulses, a beam splitter is arranged on the path of the laser beam, and a part of the laser beam is guided to the power meter and photodetector device. The energy of the laser beam branched by the beam splitter is usually about 2%~5% of the energy of the original laser beam.
在下述專利文獻1中揭示了一種雷射控制方法,其用功率計及光檢測器來偵測從雷射振盪器輸出之雷射束,從而實現了雷射輸出的穩定化。
[先前技術文獻]The following
[專利文獻1]日本特開2010-147105號公報[Patent Document 1] Japanese Patent Laid-Open No. 2010-147105
[發明所欲解決之問題][Problems to be Solved by Invention]
為了將雷射束引導至功率計及光檢測器,在雷射束的路徑上配置兩個射束分離器,產生共計4%~5%左右的能量損失。又,需要用於配置兩個射束分離器之空間。In order to guide the laser beam to the power meter and photodetector, two beam splitters are arranged on the path of the laser beam, resulting in a total energy loss of about 4% to 5%. Also, a space for arranging the two beam splitters is required.
本發明的目的在於提供一種雷射功率測量裝置,其可抑制能量損失並實現省空間化。 [解決問題之技術手段]An object of the present invention is to provide a laser power measurement device capable of suppressing energy loss and achieving space saving. [Technical means to solve problems]
根據本發明的一觀點,提供一種雷射功率測量裝置,係具有: 第1感測器,係具有供雷射束入射之受光面,並測定入射到受光面上之雷射束的平均功率;以及 第2感測器,係配置在來自前述第1感測器的受光面之散射光所入射之位置上,並測定所入射之雷射束的峰值功率。 [發明之效果]According to an aspect of the present invention, a laser power measurement device is provided, which has: The first sensor has a light-receiving surface on which the laser beam is incident, and measures the average power of the laser beam incident on the light-receiving surface; and The second sensor is arranged at a position where scattered light from the light-receiving surface of the first sensor is incident, and measures the peak power of the incident laser beam. [Effect of invention]
由於來自第1感測器的受光面之散射光入射到第2感測器,因此不需要在第2感測器上配置用於使雷射束的一部分入射之射束分離器。由於能夠減少射束分離器的數量,因此可抑制能量損失並實現省空間化。Since the scattered light from the light-receiving surface of the first sensor is incident on the second sensor, it is not necessary to arrange a beam splitter for allowing a part of the laser beam to be incident on the second sensor. Since the number of beam splitters can be reduced, energy loss can be suppressed and space saving can be achieved.
參閱圖1~圖6F,對基於一實施例之雷射功率測量裝置進行說明。
圖1係搭載有基於本實施例之雷射功率測量裝置50之雷射加工裝置的概略圖。雷射加工裝置包括雷射振盪器12、雷射功率測量裝置50、加工裝置80及雷射電源60。Referring to FIG. 1 to FIG. 6F , the laser power measurement device according to an embodiment will be described.
FIG. 1 is a schematic diagram of a laser processing apparatus equipped with a laser
雷射振盪器12被支承於台架11上,台架11固定於共用底座100。加工裝置80包括射束整形光學系統81及載台82。在載台82上保持加工對象物90。射束整形光學系統81及載台82固定於共用底座100。雷射功率測量裝置50例如由與射束整形光學系統81共用的光學平台支承。共用底座100例如係地板。The
雷射振盪器12輸出脈衝雷射束。作為雷射振盪器12,例如使用二氧化碳雷射振盪器。從雷射振盪器12輸出之脈衝雷射束藉由射束整形光學系統81整形射束輪廓,並入射到加工對象物90。雷射功率測量裝置50測定從雷射振盪器12輸出之脈衝雷射束的平均功率及峰值功率,並輸出與功率對應之電壓訊號。平均功率係藉由將脈衝能量乘以脈衝重複頻率而求出之功率。峰值功率近似於將脈衝能量除以脈衝寬度之值。從雷射功率測量裝置50輸出之電壓訊號經由放大器59輸入到雷射電源60。The
雷射電源60包括控制裝置61及放電電壓施加裝置62。控制裝置61具有如下功能:將峰值功率的測定值進行一定時間的積分,並根據積分值控制放電電壓的大小。放電電壓施加裝置62根據由控制裝置61控制之放電電壓的大小,將放電電壓施加於雷射振盪器12的放電電極。The
圖2係包括雷射振盪器12的光軸之剖面圖。雷射振盪器12包括容納雷射介質氣體及光學共振器20等的腔室15。在腔室15中容納雷射介質氣體。腔室15的內部空間區分為相對位於上側之光學室16和相對位於下側之送風機室17。光學室16與送風機室17由上下分隔板18分隔。另外,在上下分隔板18上設置有使雷射介質氣體在光學室16與送風機室17之間流通之開口。光學室16的底板19從送風機室17的側壁向光學共振器20的光軸20A的方向伸出,光學室16在光軸方向的長度比送風機室17在光軸方向的長度長。FIG. 2 is a cross-sectional view including the optical axis of the
腔室15的底板19在4個支承部位45由台架11(圖1)支承。在俯視下,4個支承部位45配置於相當於矩形的4個頂點之位置。The
在光學室16內配置有一對放電電極21及一對共振器鏡片25。一對放電電極21分別固定於電極箱22。從放電電壓施加裝置62(圖1)對放電電極21施加放電電壓。一對電極箱22經由複數個電極支承構件23而由底板19支承。一對放電電極21在上下方向上隔開間隔而配置,在兩者之間劃定放電區域24。放電電極21藉由使放電區域24產生放電而激發雷射介質氣體。一對共振器鏡片25構成具有通過放電區域24之光軸20A之光學共振器20。以下,如參閱圖3進行說明,雷射介質氣體沿著與圖2的紙面垂直之方向流過放電區域24。A pair of
一對共振器鏡片25固定於配置在光學室16內之共用的共振器底座26。共振器底座26係長邊在光軸20A的方向上的板狀構件,並經由複數個光學共振器支承構件27而由底板19支承。A pair of
在使光學共振器20的光軸20A向單方向(圖1中為左方向)延伸之延長線與光學室16的壁面的交叉部位,安裝有使雷射束穿透之透光窗28。在光學共振器20內被激勵之雷射束穿透透光窗28並放射到外部。A light-transmitting
在送風機室17中配置有送風機29。送風機29使雷射介質氣體在光學室16與送風機室17之間循環。A
圖3係與基於實施例之雷射振盪器12的光軸20A(圖2)垂直之剖面圖。如參閱圖2已進行說明,腔室15的內部空間由上下分隔板18區分為上光學室16和下送風機室17。在光學室16內配置有一對放電電極21及共振器底座26。一對放電電極21分別固定於電極箱22。電極箱22藉由複數個電極支承構件23而由腔室15的底板19(圖2)支承。在一對放電電極21之間劃定放電區域24。共振器底座26藉由複數個光學共振器支承構件27而由腔室15的底板19(圖2)支承。電極支承構件23及光學共振器支承構件27由於配置在偏離圖3所示剖面的位置上,因此在圖3中用虛線來表示電極支承構件23及光學共振器支承構件27。FIG. 3 is a cross-sectional view perpendicular to the
在光學室16內配置有分隔板40。分隔板40劃定從設置於上下分隔板18上之開口18A至放電區域24的第1氣體流路41、以及從放電區域24至設置於上下分隔板18上之另一開口18B的第2氣體流路42。雷射介質氣體沿著與光軸20A(圖2)正交之方向流過放電區域24。放電方向與雷射介質氣體流動之方向及光軸20A兩者正交。由送風機室17、第1氣體流路41、放電區域24及第2氣體流路42形成雷射介質氣體循環之循環路。送風機29以使雷射介質氣體在該循環路中循環之方式產生用箭頭表示之雷射介質氣體流。A
在送風機室17內的循環路中容納有熱交換器43。在放電區域24中被加熱之雷射介質氣體藉由通過熱交換器43而被冷卻,經冷卻之雷射介質氣體再度供給到放電區域24。The
圖4係雷射功率測量裝置50的概略俯視圖。在滑動板51上固定有光學用保持具52。在光學用保持具52上安裝有射束分離器53、作為第1感測器的功率計54及作為第2感測器的光檢測器55。從雷射振盪器12(圖2)輸出之脈衝雷射束LB以45˚的入射角入射到射束分離器53。滑動板51可以沿著脈衝雷射束LB的光軸移動。FIG. 4 is a schematic plan view of the laser
入射到射束分離器53之脈衝雷射束的約2%~5%的成分穿透射束分離器53,並入射到功率計54的受光面54A。向受光面54A的入射角例如為45˚。在入射到射束分離器53之脈衝雷射束LB中的剩餘成分經射束分離器53反射,並入射到射束整形光學系統81(圖1)。作為射束分離器53,能夠使用部分反射鏡或偏光射束分離器等。About 2% to 5% of the pulsed laser beam incident on the
功率計54測定入射到受光面54A之脈衝雷射束的平均功率。與平均功率的測定值對應之電壓訊號輸入到雷射電源60。入射到功率計54的受光面上之脈衝雷射束的一部分經受光面54A散射。散射光的一部分入射到光檢測器55的受光面55A。光檢測器55的受光面55A配置於經功率計54的受光面54A正反射之光所入射之位置。通常,光檢測器55的受光面55A的面積小於功率計54的受光面54A的面積。The
作為光檢測器55,例如使用MCT(HgCdTe)感測器。MCT感測器具有響應速度快的特徵,例如具有奈秒級的響應特性。從而,光檢測器55能夠測定奈秒程度的脈衝寬度的雷射脈衝的脈衝波形及峰值功率。As the
光檢測器55輸出與入射到受光面55A之光的功率對應之電壓訊號。該電壓訊號經由放大器59輸入到雷射電源60。The
接著,參閱圖5~圖6F,對上述實施例的優異效果進行說明。
圖5係基於比較例之雷射功率測量裝置的概略圖。脈衝雷射束LB的一部分成分經第1射束分離器53A反射,並入射到光檢測器55的受光面55A。穿透第1射束分離器53A之脈衝雷射束的一部分穿透第2射束分離器53B,並入射到功率計54的受光面54A。經第2射束分離器53B反射之脈衝雷射束被利用於雷射加工。產生相當於經第1射束分離器53A反射之脈衝雷射束及穿透第2射束分離器53B之脈衝雷射束的合計能量之能量損失。Next, referring to FIGS. 5 to 6F , the excellent effects of the above-mentioned embodiment will be described.
FIG. 5 is a schematic diagram of a laser power measuring apparatus based on a comparative example. A part of the component of the pulsed laser beam LB is reflected by the
在圖5所示比較例中,第1射束分離器53A和第2射束分離器53B兩個射束分離器沿著脈衝雷射束LB的路徑配置於不同位置上。相對於此,在本實施例中使用一個射束分離器53。在本實施例中,與比較例相比,藉由減少射束分離器的數量,能夠抑制脈衝雷射束LB的路徑長度變長,其結果,能夠實現省空間化。In the comparative example shown in FIG. 5 , the two beam splitters, the
在圖5所示比較例中,在第1射束分離器53A和第2射束分離器53B產生共計兩次能量損失。相對於此,在本實施例中,能量損失僅為基於射束分離器53之一次。從而,在本實施例中,與比較例相比,能夠減少能量損失。In the comparative example shown in FIG. 5 , a total of two energy losses occur in the
由於脈衝雷射束的振盪工作比的變化、雷射介質氣體的劣化、雷射振盪器12(圖2、圖3)內的光學零件的劣化、污染等,會產生脈衝雷射束的光軸的偏離或射束輪廓的變化。接著,對產生了光軸偏離或射束輪廓變化時之本實施例的優異效果進行說明。The optical axis of the pulsed laser beam is generated due to changes in the oscillation duty ratio of the pulsed laser beam, deterioration of the laser medium gas, deterioration of optical components in the laser oscillator 12 (FIG. 2, FIG. 3), contamination, etc. deviation or beam profile changes. Next, the excellent effects of the present embodiment when optical axis deviation or beam profile change occurs will be described.
圖6A~圖6C係表示入射到基於圖5所示比較例之雷射功率測量裝置的光檢測器55之脈衝雷射束的射束輪廓圖。橫軸表示射束點內的位置,縱軸表示光強度。射束點的中心相當於雷射束的光軸的位置。在進行了光軸調整之時刻,脈衝雷射束的光軸(射束點的中心)與受光面55A的中心一致。射束點大於受光面55A。FIGS. 6A to 6C are diagrams showing beam profiles of the pulsed laser beam incident on the
在圖6A所示例中,脈衝雷射束LB(圖5)的光軸未偏離經光軸調整後之光軸的位置。因此,射束點的中心(在高斯射束的情況下,光強度最大的位置)與受光面55A的中心一致。In the example shown in FIG. 6A , the optical axis of the pulsed laser beam LB ( FIG. 5 ) is not deviated from the position of the optical axis after the optical axis adjustment. Therefore, the center of the beam spot (in the case of a Gaussian beam, the position where the light intensity is maximum) coincides with the center of the light-receiving
在圖6B所示例中,如在圖5中用虛線來表示,脈衝雷射束LB的光軸偏離經光軸調整後之光軸的位置,射束點的中心偏離受光面55A的中心。因此,與圖6A的情況相比,入射到受光面55A之雷射功率的積分值變小。如此,即使在脈衝雷射束LB的峰值功率中沒有變動,若光軸偏離,仍會導致從光檢測器55輸出之電壓訊號下降。In the example shown in FIG. 6B , as indicated by the dotted line in FIG. 5 , the optical axis of the pulsed laser beam LB is deviated from the position of the optical axis after the optical axis adjustment, and the center of the beam spot is deviated from the center of the light-receiving
在圖6C所示例中,脈衝雷射束LB的光軸未偏離,射束點的中心與受光面55A的中心一致,但射束輪廓走樣。因此,入射到受光面55A上之雷射功率的積分值從圖6A時的積分值發生變動。如此,即使在脈衝雷射束LB的峰值功率中沒有變動,若射束輪廓走樣,仍會導致從光檢測器55輸出之電壓訊號亦發生變動。In the example shown in FIG. 6C , the optical axis of the pulsed laser beam LB is not deviated, the center of the beam spot coincides with the center of the light-receiving
即使在峰值功率中沒有變動,若從光檢測器55輸出之電壓訊號發生變動,仍會導致雷射電源60(圖1)判定為峰值功率發生變動而控制放電電壓。從而,無法進行放電電壓的正常控制,導致控制失效。另外,功率計54(圖4、圖5)的受光面54A由於比光檢測器55的受光面55A寬,因此不易產生這種問題。Even if there is no change in the peak power, if the voltage signal output from the
圖6D~圖6F係表示入射到基於圖1~圖4所示實施例之雷射功率測量裝置50的光檢測器55上之脈衝雷射束的射束輪廓圖。FIGS. 6D to 6F are beam profiles of the pulsed laser beam incident on the
在圖6D所示例中,脈衝雷射束LB(圖4)的光軸未偏離經光軸調整後之光軸的位置,射束點的中心與受光面55A的中心一致。在本實施例中,由於經功率計54的受光面54A(圖4)散射之散射光(漫射光)入射到光檢測器55的受光面55A,因此與圖6A的情況相比,受光面55A的位置上之射束輪廓變寬且接近平坦之形狀。In the example shown in FIG. 6D , the optical axis of the pulsed laser beam LB ( FIG. 4 ) is not deviated from the position of the optical axis after the optical axis adjustment, and the center of the beam spot coincides with the center of the light-receiving
在圖6E所示例中,脈衝雷射束LB(圖4)的光軸偏離經光軸調整後之光軸的位置,射束點的中心偏離受光面55A的中心。然而,由於射束輪廓呈寬且接近平坦之形狀,因此以光軸未產生偏離時(圖6D)為基準,雷射功率的積分值的減小量少。In the example shown in FIG. 6E , the optical axis of the pulsed laser beam LB ( FIG. 4 ) is deviated from the position of the optical axis after the optical axis adjustment, and the center of the beam spot is deviated from the center of the light-receiving
在圖6F所示例中,脈衝雷射束LB的光軸未偏離,射束點的中心與受光面55A的中心一致,但射束輪廓走樣。然而,由於原始射束輪廓接近平坦,因此即使射束輪廓走樣,入射到受光面55A上之雷射功率的積分值的變動量仍很少。In the example shown in FIG. 6F , the optical axis of the pulsed laser beam LB is not deviated, the center of the beam spot coincides with the center of the light-receiving
如此,在本實施例中,即使產生脈衝雷射束LB的光軸偏離或射束輪廓走樣,來自光檢測器55之電壓訊號的變化量仍很少。因此,當產生了脈衝雷射束LB的光軸偏離或射束輪廓走樣時,不易發生放電電壓的控制失效。In this way, in this embodiment, even if the optical axis of the pulsed laser beam LB is deviated or the beam profile is aliased, the voltage signal from the
為了解決比較例中之上述問題,亦可考慮如下方法:將經第1射束分離器53A反射之脈衝雷射束導入到積分球中,並由光檢測器55檢測在積分球內漫反射之光。在該方法中,由於必須重新配置積分球,因此導致裝置的大型化及成本增加。In order to solve the above problem in the comparative example, the following method can also be considered: the pulsed laser beam reflected by the
接著,參閱圖7對基於另一實施例之雷射功率測量裝置進行說明。以下,對於與基於圖1~圖4所示實施例之雷射功率測量裝置共用的結構省略進行說明。Next, referring to FIG. 7 , a laser power measuring apparatus based on another embodiment will be described. Hereinafter, the description of the configuration common to the laser power measuring apparatus based on the embodiments shown in FIGS. 1 to 4 is omitted.
圖7係基於本實施例之雷射功率測量裝置50的概略俯視圖。在本實施例中,在功率計54的受光面54A與光檢測器55的受光面55A之間配置有聚光光學零件30。聚光光學零件30係將經功率計54的受光面54A散射之光會聚並入射到光檢測器55的受光面55A。FIG. 7 is a schematic plan view of the laser
使用聚光錐作為聚光光學零件30。聚光錐具有構成圓錐台的側面(以下也稱為圓錐台面)的內表面。設置在相當於圓錐台的底面之位置之入射側開口部31大於設置在相當於圓錐台的上表面之位置之出射側開口部32。入射側開口部31朝向功率計54的受光面54A,出射側開口部32朝向光檢測器55的受光面55A。經功率計54的受光面54A散射並入射到聚光光學零件30的入射側開口部31之光,通過出射側開口部32入射到光檢測器55的受光面55A。A condenser cone is used as the
接著,對本實施例的優異效果進行說明。在本實施例中,將經功率計54的受光面54A散射之光會聚並入射到光檢測器55的受光面55A。因此,與圖1~圖4所示實施例相比,入射到光檢測器55的受光面55A上之光的功率變大。換言之,不讓入射到光檢測器55的受光面55A的光的功率降低,就能夠降低射束分離器53的穿透率。藉由降低射束分離器53的穿透率,能夠減少能量損失。Next, the excellent effects of this embodiment will be described. In this embodiment, the light scattered by the light-receiving
實際上,將除了有無聚光光學零件30以外的條件設為相同,在配置有聚光光學零件30之結構和未配置之結構中,進行了由光檢測器55測定脈衝雷射束的功率之評價實驗。在配置有聚光光學零件30之結構中,與不配置之結構相比,相當於一個脈衝之電壓波形的面積成為約3.3倍。由該評價實驗可確認,若配置聚光光學零件30,則入射到光檢測器55的受光面55A上之光的功率增加。In fact, the conditions other than the presence or absence of the condensing
在使用二氧化碳雷射作為雷射振盪器12之情況下,脈衝雷射束的波長約為10.6μm,因此即使藉由機械加工來形成聚光錐的圓錐台面,仍可作為反射面而發揮功能。由於不需要進行高精度的鏡面精加工,因此能夠抑制追加配置聚光錐所導致之成本提高。When a carbon dioxide laser is used as the
接著,對上述實施例的變形例進行說明。
在上述實施例中,作為聚光光學零件30是使用聚光錐,但亦可使用能夠將散射光會聚並入射到特定區域之其他光學零件。例如,可以使用聚光透鏡、凹面鏡等。又,在上述實施例中,聚光錐的側面由圓錐台的側面構成,另外,也可以由多角錐台例如四角錐的側面構成,亦可由拋物面構成。再者,作為聚光光學零件30,可以使用內部反射型拋物面透鏡等。內部反射型拋物面透鏡,係將從入射端面入射之光經拋物面的側面反射而會聚到出射端面上之光學零件。Next, a modification of the above-described embodiment will be described.
In the above-mentioned embodiment, the condensing cone is used as the condensing
接著,參閱圖8對基於另一實施例之雷射功率測量裝置進行說明。以下,對與基於圖1~圖4所示實施例及圖7所示實施例之雷射功率測量裝置共用的結構,省略進行說明。Next, referring to FIG. 8 , a laser power measuring apparatus based on another embodiment will be described. Hereinafter, the description of the configuration common to the laser power measuring apparatus based on the embodiment shown in FIGS. 1 to 4 and the embodiment shown in FIG. 7 is omitted.
圖8係基於本實施例之雷射功率測量裝置50的概略俯視圖。在圖7所示實施例中,脈衝雷射束LB向功率計54的受光面54A的入射角為45˚。相對於此,在本實施例中,入射角θi為22.5˚以下。在經受光面54A正反射之光所入射之位置上配置光檢測器55的受光面55A。即,從受光面54A上之脈衝雷射束LB的入射點朝向受光面55A的中心點的向量與受光面54A的法線向量所成角度θr等於入射角θi。FIG. 8 is a schematic plan view of the laser
聚光光學零件30配置成使聚光光學零件30的圓錐面的中心軸與從受光面54A上之脈衝雷射束LB的入射點朝向受光面55A的中心點的直線一致。The condensing
接著,對本實施例的優異效果進行說明。
在本實施例中,由於脈衝雷射束向功率計54的受光面54A的入射角θi為22.5˚以下,因此與入射角θi為45˚的情況相比,形成於受光面54A上之射束點變小。若射束點小,則來自受光面54A之散射光由聚光光學零件30捕獲的量更多。由此,能夠將脈衝雷射束LB的更多能量會聚到光檢測器55。換言之,不讓入射到光檢測器55的受光面55A上之光的功率降低,就能夠降低射束分離器53的穿透率。藉由降低射束分離器53的穿透率,能夠減少能量損失。Next, the excellent effects of this embodiment will be described.
In this embodiment, since the incident angle θi of the pulsed laser beam on the light-receiving
將除了入射角θi以外的條件設為相同,當入射角θi為45˚時和22.5˚時,測定出從光檢測器55輸出之電壓訊號。其結果,若將入射角θi設為22.5˚,則與入射角θi為45˚時相比,光檢測器55的輸出成為約1.2倍。如此,藉由減小入射角θi,能夠增大入射到光檢測器55的受光面55A上之光的功率。為了獲得增大入射到受光面55A上之光的功率的充分的效果,將入射角θi設為22.5˚以下為較佳。The conditions other than the incident angle θi were the same, and the voltage signal output from the
接著,參閱圖9A~圖9C,對聚光錐的圓錐台面的較佳形狀進行說明。Next, referring to FIGS. 9A to 9C , the preferred shape of the truncated conical surface of the condensing cone will be described.
圖9A及圖9B係表示經受光面54A散射並入射到聚光光學零件30的入射側開口部31的邊緣上之光的路徑的一例之圖。在圖9A和圖9B中,聚光光學零件30的圓錐台面的頂角不同,圖9B所示之圓錐台面的頂角大於圖9A所示之圓錐台面的頂角。在此,圓錐台面的頂角係指:包括將圓錐台面設為側面之圓錐台的圓錐的頂角。FIGS. 9A and 9B are diagrams showing an example of a path of light that is scattered by the
如圖9A所示,經受光面54A散射並入射到聚光光學零件30的入射側開口部31的邊緣上之光,經圓錐台面反射複數次之後,通過出射側開口部32輸出到外部。如圖9B所示,若增大圓錐台面的頂角,則有可能導致在受光面54A上散射並入射到聚光光學零件30的入射側開口部31的邊緣上之光,經圓錐台面重複反射而返回到入射側開口部31。As shown in FIG. 9A , light scattered by the
實際上,使用圓錐台面的頂角的大小不同之複數個聚光光學零件30進行了測定從光檢測器55輸出之電壓訊號之評價實驗。在評價實驗中,在將兩個受光面54A、55A的中心彼此連接之直線上之入射側開口部31及出射側開口部32的位置是固定的,讓入射側開口部31的大小改變。In fact, an evaluation experiment for measuring the voltage signal output from the
圖9C係表示圓錐台面的頂角的大小與從光檢測器55輸出之電壓訊號的大小的關係圖。橫軸表示將圓錐台面的頂角正規化之值,縱軸表示將來自光檢測器55之電壓訊號的大小正規化的值。當頂角為某一大小時,來自光檢測器55之電壓訊號呈現最大值。將此時的頂角的大小設為1,並將頂角正規化。又,將此時的來自光檢測器55之輸出設為1,並將輸出正規化。FIG. 9C is a graph showing the relationship between the magnitude of the vertex angle of the truncated cone and the magnitude of the voltage signal output from the
隨著正規化頂角從1越變越大,光檢測器55的正規化輸出減少。這係因為,如圖9B所示,入射到入射側開口部31上之光的一部分未通過出射側開口部32輸出而返回到入射側開口部31的成分變多。又,即使正規化頂角從1越變越小,光檢測器55的正規化輸出仍減少。這係因為,由於入射側開口部31的面積變小,因此由聚光光學零件30會聚之散射光的量減少。As the normalized vertex angle becomes larger from 1, the normalized output of the
如圖9C所示,在圓錐台面的頂角中存在使光檢測器55的輸出最大化之最佳值。例如,聚光光學零件30的圓錐台面的頂角較佳為設定成,使經功率計54的受光面54A散射並入射到聚光光學零件的入射側開口部的邊緣上之光通過出射側開口部輸出到外部的大小。又較佳為,在滿足該條件之範圍內,使入射側開口部31成為最大。As shown in Fig. 9C, there is an optimum value in the apex angle of the frustum that maximizes the output of the
上述各實施例為示例,當然可以部分替換或組合在不同實施例中示出之結構。關於複數個實施例的基於相同結構之相同之作用效果,對每個實施例不逐一說明。再者,本發明並不限定於上述實施例。例如,可以進行各種變更、改進、組合等對所屬領域技術具有通常知識者而言係顯而易知的。The above-mentioned embodiments are examples, and of course, the structures shown in different embodiments may be partially replaced or combined. The same functions and effects based on the same structure of the plurality of embodiments will not be described one by one for each embodiment. In addition, this invention is not limited to the above-mentioned embodiment. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, etc. can be made.
11:台架
12:雷射振盪器
15:腔室
16:光學室
17:送風機室
18:上下分隔板
18A,18B:開口
19:底板
20:光學共振器
20A:光軸
21:放電電極
22:電極箱
23:電極支承構件
24:放電區域
25:共振器鏡片
26:共振器底座
27:光學共振器支承構件
28:透光窗
29:送風機
30:聚光光學零件
31:入射側開口部
32:出射側開口部
40:分隔板
41:第1氣體流路
42:第2氣體流路
43:熱交換器
45:支承部位
50:雷射功率測量裝置
51:滑動板
52:光學用保持具
53:射束分離器
53A:第1射束分離器
53B:第2射束分離器
54:功率計(第1感測器)
54A:受光面
55:光檢測器(第2感測器)
55A:受光面
59:放大器
60:雷射電源
61:控制裝置
62:放電電壓施加裝置
80:加工裝置
81:射束整形光學系統
82:載台
90:加工對象物
100:共用底座11: Bench
12: Laser oscillator
15: Chamber
16: Optical Room
17: Blower room
18: Upper and
[圖1]係搭載有基於本實施例之雷射功率測量裝置之雷射加工裝置的概略圖。 [圖2]係包括雷射振盪器的光軸之剖面圖。 [圖3]係與基於實施例之雷射振盪器的光軸垂直之剖面圖。 [圖4]係雷射功率測量裝置的概略俯視圖。 [圖5]係基於比較例之雷射功率測量裝置的概略圖。 [圖6A]~[圖6C]係表示入射到基於圖5所示比較例之雷射功率測量裝置的光檢測器上之脈衝雷射束的射束輪廓圖,[圖6D]~[圖6F]係表示入射到基於圖1~圖4所示實施例之雷射功率測量裝置的光檢測器上之脈衝雷射束的射束輪廓圖。 [圖7]係基於另一實施例之雷射功率測量裝置的概略俯視圖。 [圖8]係基於又一實施例之雷射功率測量裝置的概略俯視圖。 [圖9A]及[圖9B]係表示在受光面上散射並入射到聚光光學零件的入射側開口部邊緣上之光的路徑的一例之圖,[圖9C]係表示圓錐台面的頂角的大小與從檢測器輸出之電壓訊號的大小的關係圖。FIG. 1 is a schematic diagram of a laser processing apparatus equipped with the laser power measuring apparatus according to the present embodiment. [FIG. 2] is a cross-sectional view including the optical axis of the laser oscillator. FIG. 3 is a cross-sectional view perpendicular to the optical axis of the laser oscillator according to the embodiment. [ Fig. 4 ] It is a schematic plan view of a laser power measuring device. FIG. 5 is a schematic diagram of a laser power measurement device based on a comparative example. [FIG. 6A]~[FIG. 6C] are beam profiles showing the pulsed laser beam incident on the photodetector of the laser power measuring device based on the comparative example shown in FIG. 5, [FIG. 6D]~[FIG. 6F] ] represents the beam profile of the pulsed laser beam incident on the photodetector of the laser power measuring device based on the embodiment shown in FIGS. 1 to 4 . FIG. 7 is a schematic plan view of a laser power measuring device according to another embodiment. [ Fig. 8] Fig. 8 is a schematic plan view of a laser power measuring apparatus according to still another embodiment. [ Fig. 9A ] and [ Fig. 9B ] are diagrams showing an example of the path of light scattered on the light-receiving surface and incident on the edge of the incident-side opening of the condensing optical component, and [ Fig. 9C ] is a diagram showing the apex angle of the truncated conical surface The relationship between the magnitude of and the magnitude of the voltage signal output from the detector.
51:滑動板51: Sliding board
52:光學用保持具52: Optical holder
53:射束分離器53: Beam Splitter
54:功率計(第1感測器)54: Power meter (first sensor)
54A:受光面54A: light-receiving surface
55:光檢測器(第2感測器)55: Photodetector (second sensor)
55A:受光面55A: light-receiving surface
59:放大器59: Amplifier
60:雷射電源60: Laser power supply
LB:脈衝雷射束LB: pulsed laser beam
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020-115642 | 2020-07-03 | ||
JP2020115642A JP7475220B2 (en) | 2020-07-03 | 2020-07-03 | Laser Power Measurement Device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202203531A TW202203531A (en) | 2022-01-16 |
TWI777625B true TWI777625B (en) | 2022-09-11 |
Family
ID=79010339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110122530A TWI777625B (en) | 2020-07-03 | 2021-06-21 | Laser power measurement device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7475220B2 (en) |
KR (1) | KR20220004555A (en) |
CN (1) | CN113884181A (en) |
TW (1) | TWI777625B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102573086B1 (en) | 2023-02-07 | 2023-09-01 | 최진용 | Apparatus for laser beam measurement |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060088074A1 (en) * | 2004-10-27 | 2006-04-27 | Johnstone Eric S | Amplified beam source |
US20100150189A1 (en) * | 2008-12-16 | 2010-06-17 | Sony Disc & Digital Solutions Inc. | Laser control method and laser control circuit |
US20110090501A1 (en) * | 2009-10-19 | 2011-04-21 | Ipg Photonics Corporation | Assembly For Monitoring Power of Randomly Polarized Light |
TW201233482A (en) * | 2010-12-24 | 2012-08-16 | Sumitomo Chemical Co | Laser beam irradiation device and laser beam irradiation method |
US8855153B2 (en) * | 2012-11-08 | 2014-10-07 | Hon Hai Precision Industry Co., Ltd. | Laser machining control system through feedback |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09108866A (en) * | 1995-10-18 | 1997-04-28 | P S L Kk | Laser emission mechanism for processing having mechanism for discriminating processing defect |
JP4083928B2 (en) * | 1999-07-01 | 2008-04-30 | エーエルティー株式会社 | Scanning laser beam position detector |
JP2001317995A (en) * | 2000-05-08 | 2001-11-16 | Nippon Steel Corp | Power damper for high power lasers, laser power meter and laser power measuring method |
JP3437154B2 (en) * | 2000-08-14 | 2003-08-18 | 川崎重工業株式会社 | Laser beam measuring device and control device |
JP2002368321A (en) | 2001-06-05 | 2002-12-20 | Sumitomo Electric Ind Ltd | Light emitting module |
JP2003059083A (en) | 2001-08-14 | 2003-02-28 | Sony Corp | Optical head and optical disk playing-back device |
JP2004259836A (en) | 2003-02-25 | 2004-09-16 | Sony Corp | Light receiving and emitting device, optical head and optical disk equipment |
JP2006224174A (en) * | 2005-02-21 | 2006-08-31 | Sumitomo Heavy Ind Ltd | Laser machining apparatus, and method for setting threshold of pulse energy |
JP2007044739A (en) * | 2005-08-11 | 2007-02-22 | Miyachi Technos Corp | Laser machining monitoring device |
JP2009141107A (en) | 2007-12-06 | 2009-06-25 | Seiko Epson Corp | Laser light source device, projector and optical device |
JP2010093243A (en) * | 2008-09-09 | 2010-04-22 | Hikari Physics Kenkyusho:Kk | Optical peak power detection apparatus, and pulse laser generation apparatus using the same |
EP3091369B1 (en) * | 2015-05-05 | 2018-07-11 | Sick Ag | Laser scanner |
US11079564B2 (en) | 2017-07-20 | 2021-08-03 | Cymer, Llc | Methods and apparatuses for aligning and diagnosing a laser beam |
US10473923B2 (en) | 2017-09-27 | 2019-11-12 | Apple Inc. | Focal region optical elements for high-performance optical scanners |
-
2020
- 2020-07-03 JP JP2020115642A patent/JP7475220B2/en active Active
-
2021
- 2021-06-17 KR KR1020210078435A patent/KR20220004555A/en active Search and Examination
- 2021-06-21 TW TW110122530A patent/TWI777625B/en active
- 2021-06-22 CN CN202110692275.6A patent/CN113884181A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060088074A1 (en) * | 2004-10-27 | 2006-04-27 | Johnstone Eric S | Amplified beam source |
US20100150189A1 (en) * | 2008-12-16 | 2010-06-17 | Sony Disc & Digital Solutions Inc. | Laser control method and laser control circuit |
US20110090501A1 (en) * | 2009-10-19 | 2011-04-21 | Ipg Photonics Corporation | Assembly For Monitoring Power of Randomly Polarized Light |
TW201233482A (en) * | 2010-12-24 | 2012-08-16 | Sumitomo Chemical Co | Laser beam irradiation device and laser beam irradiation method |
US8855153B2 (en) * | 2012-11-08 | 2014-10-07 | Hon Hai Precision Industry Co., Ltd. | Laser machining control system through feedback |
Also Published As
Publication number | Publication date |
---|---|
CN113884181A (en) | 2022-01-04 |
KR20220004555A (en) | 2022-01-11 |
JP2022022744A (en) | 2022-02-07 |
TW202203531A (en) | 2022-01-16 |
JP7475220B2 (en) | 2024-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7096850B2 (en) | Laser pulse repetition frequency multiplier | |
US7616328B2 (en) | Method and system for providing a high definition triangulation system | |
US8427633B1 (en) | Laser beam analysis apparatus | |
EP1779481B1 (en) | Method and apparatus for gas discharge laser output light coherency reduction | |
KR101805968B1 (en) | Flat field telecentric scanner with diffraction limited performance | |
JP2004212059A (en) | Distance measuring apparatus | |
JP2014504956A (en) | Reduction of back reflections in laser micromachining systems. | |
TWI777625B (en) | Laser power measurement device | |
CN111670345A (en) | Method and device for detecting the focal position of a laser beam | |
JP2023029347A (en) | optical device | |
JP2013002819A (en) | Flatness measuring device | |
US12019019B2 (en) | Light source device and range sensor provided with the same | |
WO2016147751A1 (en) | Laser beam intensity distribution measurement device and laser beam intensity distribution measurement method | |
KR101166417B1 (en) | Auto focusing apparatus | |
JP2003083723A (en) | Three-dimensional shape measuring optical system | |
US20240118417A1 (en) | Apparatus for Optically Measuring the Distance to a Scattering Target Object or a Reflecting Target Object | |
TWI832171B (en) | Inspection device, inspection method and laser processing device | |
EP4296612B1 (en) | Laser processing apparatus with measuring module with adjustable path length difference | |
JP7206736B2 (en) | Measuring device and measuring method | |
JP4066629B2 (en) | 3D shape measurement optical system | |
JPH05322561A (en) | Focus detector | |
JPH03238307A (en) | Outer-diameter measuring apparatus | |
JPH045514A (en) | Optical fine displacement measuring instrument | |
JPH10239210A (en) | Method and device for inspecting lens or mirror |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |