TWI776995B - 氧化物半導體薄膜、薄膜電晶體、薄膜電晶體之製造方法及濺鍍靶 - Google Patents
氧化物半導體薄膜、薄膜電晶體、薄膜電晶體之製造方法及濺鍍靶 Download PDFInfo
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- TWI776995B TWI776995B TW107141216A TW107141216A TWI776995B TW I776995 B TWI776995 B TW I776995B TW 107141216 A TW107141216 A TW 107141216A TW 107141216 A TW107141216 A TW 107141216A TW I776995 B TWI776995 B TW I776995B
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- 239000010409 thin film Substances 0.000 title claims abstract description 164
- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000005477 sputtering target Methods 0.000 title claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 53
- 229910052718 tin Inorganic materials 0.000 claims abstract description 46
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 39
- 229910052738 indium Inorganic materials 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims description 74
- 238000005530 etching Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims 1
- 239000011135 tin Substances 0.000 description 84
- 239000010936 titanium Substances 0.000 description 77
- 239000010410 layer Substances 0.000 description 69
- 239000011701 zinc Substances 0.000 description 67
- 229910007541 Zn O Inorganic materials 0.000 description 63
- 239000000758 substrate Substances 0.000 description 25
- 239000011521 glass Substances 0.000 description 22
- 230000005540 biological transmission Effects 0.000 description 18
- 238000005259 measurement Methods 0.000 description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910008839 Sn—Ti Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LXFUCSMCVAEMCD-UHFFFAOYSA-N acetic acid;nitric acid;phosphoric acid Chemical compound CC(O)=O.O[N+]([O-])=O.OP(O)(O)=O LXFUCSMCVAEMCD-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- -1 such as In 2 O 3 Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
本發明之一形態之氧化物半導體薄膜係由包含In、Zn、Ti及Sn之氧化物半導體構成,且(In+Sn)/(In+Zn+Ti+Sn)之原子比為0.36以上0.92以下,Sn/(In+Sn)之原子比為0.02以上0.46以下,Sn/(In+Zn+Ti+Sn)之原子比為0.01以上0.42以下,Ti/(In+Zn+Ti+Sn)之原子比為0.01以上0.10以下。
Description
本發明係關於一種包含In、Zn、Ti及Sn之氧化物半導體薄膜。
將In-Ga-Zn-O系氧化物半導體膜(IGZO)用於活性層之薄膜電晶體(TFT:Thin-Film Transistor)與先前之將非晶矽膜用於活性層之TFT相比,可獲得高遷移率,因此近年來被廣泛地應用於各種顯示器(例如參照專利文獻1至專利文獻3)。
例如專利文獻1中揭示有一種有機EL(electroluminescence;電致發光)顯示裝置,其中驅動有機EL元件之TFT之活性層由IGZO構成。專利文獻2中揭示有一種薄膜電晶體,其中通道層(活性層)由a-IGZO構成,且遷移率為5cm2/Vs以上。進而,專利文獻3中揭
示有一種薄膜電晶體,其中活性層由IGZO構成,且接通(ON)/斷開(OFF)電流比為5位數以上。
[先前技術文獻]
[專利文獻]
專利文獻1:日本特開2009-31750號公報。
專利文獻2:日本特開2011-216574號公報。
專利文獻3:WO2010/092810號。
近年來,根據各種顯示器中之關於高解析度化或低功耗化、高幀頻(frame rate)化之要求,而對顯示更高遷移率之氧化物半導體之要求提高。然而,於活性層中使用IGZO之薄膜電晶體中,遷移率難以獲得超過10cm2/Vs之值,而要求開發顯示更高遷移率之薄膜電晶體用途之材料。
鑒於如以上之情況,本發明之目的在於提供一種代替IGZO之高特性的薄膜電晶體及其製造方法及用於活性層之氧化物半導體薄膜。
為了達成上述目的,本發明之一形態之氧化物半導體薄膜係由包含In、Zn、Ti及Sn之氧化物半導體構成,且
(In+Sn)/(In+Zn+Ti+Sn)之原子比為0.36以上0.92以下,Sn/(In+Sn)之原子比為0.02以上0.46以下,Sn/(In+Zn+Ti+Sn)之原子比為0.01以上0.42以下,Ti/(In+Zn+Ti+Sn)之原子比為0.01以上0.10以下。
於上述氧化物半導體薄膜中,可為(In+Sn)/(In+Zn+Ti+Sn)之原子比為0.48以上0.72以下,Sn/(In+Sn)之原子比為0.03以上0.29以下,Sn/(In+Zn+Ti+Sn)之原子比為0.02以上0.21以下,Ti/(In+Zn+Ti+Sn)之原子比為0.03以上0.10以下。
本發明之一形態之薄膜電晶體具備由上述構成之氧化物半導體薄膜構成之活性層。
藉此,可構成具有10cm2/Vs以上之遷移率之薄膜電晶體。
另外,可獲得於60℃之溫度下將+30V之閘極電壓持續施加60分鐘之試驗的實施前後的臨限值電壓的變化量為0V以上2V以下的薄膜電晶體。
或者,可獲得於60℃之溫度下將-30V之閘極電壓持續施加60分鐘之試驗的實施前後的臨限值電壓的變化量為-2V以上0V以下的薄膜電晶體。
本發明之一形態之薄膜電晶體之製造方法係製造具備由上述構成之氧化物半導體薄膜構成之活性層之薄膜
電晶體的方法,於閘極電極上形成閘極絕緣膜,於前述閘極絕緣膜上利用濺鍍法形成前述活性層,形成以前述活性層作為基底膜之金屬層,利用濕式蝕刻法將前述金屬層進行圖案化(patterning),藉此形成源極電極及汲極電極。
活性層由含有Sn之氧化物半導體薄膜構成,因此耐化學品性優異。因此,可不形成保護活性層免受蝕刻液影響之蝕刻終止層(etching stopper),而將源極/汲極電極進行圖案化。
如上所述,根據本發明,可提供代替IGZO之高特性的薄膜電晶體。
10:基板
11:閘極電極
12:閘極絕緣膜
13:活性層
14S:源極電極
14D:汲極電極
15:保護膜
100:薄膜電晶體
圖1係表示本發明之一實施形態之薄膜電晶體的構成之概略剖面圖。
圖2係說明上述薄膜電晶體的作用之圖。
以下,一面參照圖式,一面說明本發明之實施形態。
圖1係表示本發明之一實施形態之薄膜電晶體的構成之概略剖面圖。本實施形態中,列舉所謂底部閘極型的
場效型電晶體為例進行說明。
[薄膜電晶體]
本實施形態之薄膜電晶體100具有閘極電極11、閘極絕緣膜12、活性層13、源極電極14S及汲極電極14D。
閘極電極11由形成於基材10的表面之導電膜構成。典型而言,基材10為透明的玻璃基板。典型而言,閘極電極11由鉬(Mo)、鈦(Ti)、鋁(Al)、銅(Cu)等金屬單層膜或金屬多層膜構成,例如藉由濺鍍法形成。本實施形態中,閘極電極11由鉬構成。閘極電極11的厚度並無特別限定,例如為200nm。閘極電極11例如利用濺鍍法、真空蒸鍍法等成膜。
活性層13發揮作為薄膜電晶體100的通道層的功能。活性層13的膜厚例如為10nm至200nm。活性層13係由包含In(銦)、Zn(鋅)、Ti(鈦)及Sn(錫)之In-Sn-Ti-Zn-O系氧化物半導體薄膜構成。活性層13例如利用濺鍍法成膜。關於上述氧化物半導體薄膜的具體組成,將於後文進行敘述。
閘極絕緣膜12形成於閘極電極11與活性層13之間。閘極絕緣膜12例如由氧化矽膜(SiOx)、氮化矽膜(SiNx)或這些之積層膜構成。成膜方法並無特別限定,可為CVD(Chemical Vapor Deposition;化學氣相沈積)法,亦可
為濺鍍法、蒸鍍法等。閘極絕緣膜12的膜厚並無特別限定,例如為200nm至400nm。
源極電極14S及汲極電極14D於活性層13上相互相隔而形成。源極電極14S及汲極電極14D例如可由鋁、鉬、銅、鈦等金屬單層膜或者這些金屬之多層膜構成。如下所述,源極電極14S及汲極電極14D可藉由將金屬膜進行圖案化而同時形成。該金屬膜的厚度例如為100nm至200nm。源極電極14S及汲極電極14D例如利用濺鍍法、真空蒸鍍法等成膜。
源極電極14S及汲極電極14D由保護膜15被覆。保護膜15例如由氧化矽膜、氮化矽膜、或這些之積層膜等電絕緣性材料構成。保護膜15係用以遮蔽包含活性層13之元件部免受外部氣體影響之膜。保護膜15的膜厚並無特別限定,例如為100nm至300nm。保護膜15例如利用CVD法成膜。
形成保護膜15後,實施退火處理。藉此,使活性層13活化。退火條件並無特別限定,本實施形態中於大氣中以約300℃實施1小時。
於保護膜15中的適宜的位置設置有層間連接孔,用以將源極電極14S、汲極電極14D與配線層(圖示略)連
接。上述配線層係用以將薄膜電晶體100與未圖示的周邊電路連接之層,由ITO(Indium Tin Oxide;氧化銦錫)等透明導電膜構成。
[氧化物半導體薄膜]
繼而,對構成活性層13之氧化物半導體薄膜進行說明。
如上所述,活性層13係由包含In、Zn、Ti及Sn之氧化物半導體薄膜構成。
(In+Sn)/(In+Zn+Ti+Sn)之原子比(In及Sn之和相對於In、Zn、Ti及Sn之總和之原子比)為0.36以上0.92以下。
Sn/(In+Sn)之原子比(Sn相對於In及Sn之和之原子比)為0.02以上0.46以下。
Sn/(In+Zn+Ti+Sn)之原子比(Sn相對於In、Zn、Ti及Sn之總和之原子比)為0.01以上0.42以下。
Ti/(In+Zn+Ti+Sn)之原子比(Ti相對於In、Zn、Ti及Sn之總和之原子比)為0.01以上0.10以下。
再者,組成的上限值及下限值係將小數點後第3位進行四捨五入所得之值(以下相同)。
藉由使活性層13由上述組成範圍之In-Sn-Ti-Zn-O系氧化物半導體薄膜構成,可獲得具有10cm2/Vs以上之遷
移率之電晶體特性。
進而,本實施形態中,由於活性層13由包含Sn之氧化物半導體薄膜構成,故而可構成耐化學品性優異之活性層13。因此,在源極電極14S及汲極電極14D之圖案化步驟時,無需設置保護活性層免受蝕刻液影響之蝕刻終止層。藉此,於形成以活性層13作為基底膜之金屬層之後,利用濕式蝕刻法將該金屬層進行圖案化,藉此可容易地形成源極電極14S及汲極電極14D。
作為蝕刻液,典型而言,可列舉:PAN(Phosphoric Acetic Nitric acid;磷酸-乙酸-硝酸)液1(磷酸≒75%、硝酸≒10%、乙酸≒14%、水≒1%之混合液)及PAN液2(磷酸≒73%、硝酸≒3%、乙酸≒7%、水≒17%之混合液)等。
於構成活性層13之氧化物半導體薄膜中,更佳為(In+Sn)/(In+Zn+Ti+Sn)之原子比為0.48以上0.72以下,Sn/(In+Sn)之原子比為0.03以上0.29以下,Sn/(In+Zn+Ti+Sn)之原子比為0.02以上0.21以下,並且Ti/(In+Zn+Ti+Sn)之原子比為0.03以上0.10以下。
藉此,可獲得具有20cm2/Vs以上之遷移率之電晶體特性。
根據上述組成範圍之氧化物半導體薄膜,可將臨限值
電壓之變動抑制為預定電壓以下,因此可長期確保可靠性高的切換動作。例如,於對薄膜電晶體之閘極電極-源極電極間(或者閘極電極-源極電極間及汲極電極-源極電極間)持續施加固定電壓,對此時的臨限值電壓的變動進行評價之BTS(Bias Temperature Stress;偏壓溫度應力)試驗中,本發明者等人確認到,關於PBTS(Positive Bias Temperature Stress;正偏壓溫度應力)及NBTS(Negative Bias Temperature Stress;負偏壓溫度應力)之任一特性均可獲得良好的結果。
具體而言,於60℃之溫度下將+30V之閘極電壓持續施加60分鐘之PBTS試驗的實施前後的臨限值電壓的變化量為0V以上2V以下。
另外,於60℃之溫度下將-30V之閘極電壓持續施加60分鐘之試驗的實施前後的臨限值電壓的變化量為-2V以上0V以下。
活性層13係藉由下述方式形成:使用由In、Zn、Ti及Sn各自的氧化物的燒結體構成之濺鍍靶而成膜後,於預定溫度下進行熱處理(退火)。藉由將上述靶於預定條件下進行濺鍍,而形成具有與靶的組成相同或大致相同的組成之氧化物半導體薄膜。藉由將該半導體膜於預定溫度下進行退火處理,例如形成表現遷移率為10cm2/Vs以上之電晶體特性之活性層。
上述濺鍍靶可由燒結體構成,該燒結體係使用In2O3、TiO2、ZnO及SnO2等In、Ti、Zn及Sn各自的氧化物作為原料粉末,將這些以上述組成比混合而成。
[特性評價]
如圖2所示,確認到若對使用In-Sn-Ti-Zn-SnO膜作為活性層之薄膜電晶體的傳輸特性進行評價,則與In-Ti-Zn-O系氧化物半導體薄膜及In-Ga-Zn-O系氧化物薄膜的傳輸特性相比,遷移率及接通/斷開電流比均較高。
此處,將閘極電壓(Vg)為-15V時的汲極電流(Id)設為斷開電流,將閘極電壓(Vg)為+20V時的汲極電流(Id)設為接通電流,將所獲得之接通電流相對於斷開電流之比設為接通/斷開電流比。
進而,確認到若將汲極電流(Id)成為1E-09(1.0×10-9)A之閘極電壓(Vg)設為臨限值電壓(Vth),則於In-Ga-Zn-O系氧化物薄膜中,電壓施加時間越長,臨限值電壓越向+側偏移(最大為約6V);相對於此,於In-Sn-Ti-Zn-O系氧化物薄膜中,臨限值電壓的偏移量為2V以下。
[實驗例]
本發明者等人利用濺鍍法分別形成In-Ti-Zn-O系氧
化物薄膜、In-Sn-Ti-Zn-O系氧化物薄膜及In-Ga-Zn-O系氧化物半導體薄膜,將這些膜作為活性層而製作圖1所示之結構之薄膜電晶體,對各電晶體的傳輸特性(遷移率、臨限值電壓、PBTS、NBTS)進行評價。進而,分別對上述氧化物半導體薄膜的膜特性(載子密度、濕式蝕刻速率)進行評價。
臨限值電壓(Vth)係設為汲極電流(Id)成為1.0×10-9A之閘極電壓(Vg)。
PBTS(△Vth)係設為於60℃之溫度下將+30V之閘極電壓施加60分鐘後的臨限值電壓的變化量。
NBTS(△Vth)係設為於60℃之溫度下將-30V之閘極電壓施加60分鐘後的臨限值電壓的變化量。
載子密度係於將剛成膜後的氧化物半導體薄膜於350℃下於大氣中退火1小時後,利用霍爾效應(Hall effect)測定器測定膜中的載子濃度。
測定蝕刻速率時,採用將剛成膜後的氧化物半導體薄膜於在40℃下管理之藥液(臨床乙酸系蝕刻液)中浸漬之浸漬法(Dip method)。
作為成膜條件,基板溫度係設為100℃,濺鍍氣體係設為氬及氧之混合氣體(氧含有比率7%),膜厚係設為50nm。
(樣品1)
使用In-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti之合計量中所佔之原子比分別為In:48原子%、Zn:48原子%、Ti:4原子%之In-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為12cm2/Vs,臨限值電壓(Vth)為0.4V,PBTS(Vth)為+3.2V,NBTS(Vth)為-0.1V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為5.1E+16(5.1×1016)/cm3,蝕刻速率為4.7nm/sec。
(樣品2)
使用In-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti之合計量中所佔之原子比分別為In:58原子%、Zn:38原子%、Ti:4原子%之In-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為15cm2/Vs,臨限值電壓(Vth)為0.7V,PBTS(Vth)為+1.8V,NBTS(Vth)為-1.2V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為2.5E+17(2.5×1017)/cm3,蝕刻速率為2.8nm/sec。
(樣品3)
使用In-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti之合計量中所佔之原子比分別為In:85原子%、Zn:7原子%、Ti:8原子%之In-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為50cm2/Vs,臨限值電壓(Vth)為-5.2V,PBTS(Vth)為+0.5V,NBTS(Vth)為-5.0V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為4.1E+19(4.1×1019)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品4)
使用In-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti之合計量中所佔之原子比分別為In:38原子%、Zn:58原子%、Ti:4原子%之In-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為6cm2/Vs,臨限值電壓(Vth)為0.3V,PBTS(Vth)為+3.2V,NBTS(Vth)為-0.9V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載
子密度為2.5E+16(2.5×1016)/cm3,蝕刻速率為13.0nm/sec。
(樣品5)
使用In-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti之合計量中所佔之原子比分別為In:17原子%、Zn:75原子%、Ti:8原子%之In-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為5cm2/Vs,臨限值電壓(Vth)為2.8V,PBTS(Vth)為+4.5V,NBTS(Vth)為-0.5V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為4.0E+14(4.0×1014)/cm3,蝕刻速率為15.0nm/sec。
(樣品6)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:35原子%、Zn:60原子%、Ti:4原子%、Sn:1原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為10cm2/Vs,臨限值電壓(Vth)為1.8V,PBTS(Vth)為+1.8V,NBTS(Vth)為-0.4V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載
子密度為3.5E+17(3.5×1017)/cm3,蝕刻速率為10.0nm/sec。
(樣品7)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:58原子%、Zn:37原子%、Ti:4原子%、Sn:1原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為17cm2/Vs,臨限值電壓(Vth)為0.7V,PBTS(Vth)為+0.9V,NBTS(Vth)為-1.2V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為5.6E+17(5.6×1017)/cm3,蝕刻速率為2.6nm/sec。
(樣品8)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:46原子%、Zn:48原子%、Ti:4原子%、Sn:2原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為20cm2/Vs,臨限值電壓(Vth)為0.9V,PBTS(Vth)為+1.5V,NBTS(Vth)為-0.6V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載
子密度為4.2E+17(4.2×1017)/cm3,蝕刻速率為3.0nm/sec。
(樣品9)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:56原子%、Zn:39原子%、Ti:3原子%、Sn:2原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為21cm2/Vs,臨限值電壓(Vth)為0.8V,PBTS(Vth)為+1.2V,NBTS(Vth)為-1.0V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為3.5E+17(3.5×1017)/cm3,蝕刻速率為2.2nm/sec。
(樣品10)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:57原子%、Zn:35原子%、Ti:3原子%、Sn:5原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為23cm2/Vs,臨限值電壓(Vth)為0.6V,PBTS(Vth)為+1.0V,NBTS(Vth)為-0.7V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載
子密度為5.6E+17(5.6×1017)/cm3,蝕刻速率為1.0nm/sec。
(樣品11)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:53原子%、Zn:30原子%、Ti:3原子%、Sn:14原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為26cm2/Vs,臨限值電壓(Vth)為0.3V,PBTS(Vth)為+0.7V,NBTS(Vth)為-0.2V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為2.5E+18(2.5×1018)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品12)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:52原子%、Zn:28原子%、Ti:3原子%、Sn:17原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為27cm2/Vs,臨限值電壓(Vth)為0.2V,PBTS(Vth)為+0.6V,NBTS(Vth)為-1.5V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為4.1E+18(4.1×1018)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品13)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:51原子%、Zn:25原子%、Ti:3原子%、Sn:21原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為28cm2/Vs,臨限值電壓(Vth)為0.1V,PBTS(Vth)為+0.6V,NBTS(Vth)為-2.0V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為4.0E+18(4.0×1018)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品14)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:51原子%、Zn:18原子%、Ti:10原子%、Sn:21原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為
20cm2/Vs,臨限值電壓(Vth)為0.7V,PBTS(Vth)為+1.1V,NBTS(Vth)為-0.6V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為6.0E+17(6.0×1017)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品15)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上,製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:52原子%、Zn:5原子%、Ti:3原子%、Sn:40原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為29cm2/Vs,臨限值電壓(Vth)為-3.6V,PBTS(Vth)為+0.5V,NBTS(Vth)為-3.4V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為8.5E+18(8.5×1018)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品16)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:50原子%、Zn:4原子%、Ti:4原子%、Sn:42原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為32cm2/Vs,臨限值電壓(Vth)為-4.6V,PBTS(Vth)為+0.2V,NBTS(Vth)為-4.8V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為6.0E+19(6.0×1019)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品17)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:63原子%、Zn:19原子%、Ti:4原子%、Sn:14原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為27cm2/Vs,臨限值電壓(Vth)為-0.8V,PBTS(Vth)為+0.6V,NBTS(Vth)為-2.2V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為5.2E+18(5.2×1018)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品18)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:54
原子%、Zn:32原子%、Ti:1原子%、Sn:13原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為25cm2/Vs,臨限值電壓(Vth)為-4.1V,PBTS(Vth)為+1.1V,NBTS(Vth)為-4.2V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為2.8E+19(2.8×1019)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品19)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:53原子%、Zn:30原子%、Ti:10原子%、Sn:7原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為11cm2/Vs,臨限值電壓(Vth)為2.6V,PBTS(Vth)為+3.4V,NBTS(Vth)為-0.6V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為7.0E+16(7.0×1016)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品20)
使用In-Sn-Ti-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ti、Sn之合計量中所佔之原子比分別為In:40原子%、Zn:38原子%、Ti:12原子%、Sn:10原子%之In-Sn-Ti-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為8cm2/Vs,臨限值電壓(Vth)為2.8V,PBTS(Vth)為+3.1V,NBTS(Vth)為-0.7V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為3.8E+15(3.8×1016)/cm3,蝕刻速率未達0.1nm/sec(測定極限)。
(樣品21)
使用In-Ga-Zn-O靶,於玻璃基板上製作各元素於In、Zn及Ga之合計量中所佔之原子比分別為In:33原子%、Zn:33原子%、Ga:33原子%之In-Ga-Zn-O系氧化物半導體薄膜。
對具有由所製作之氧化物半導體薄膜構成之活性層之薄膜電晶體的傳輸特性進行評價,結果遷移率為8cm2/Vs,臨限值電壓(Vth)為3.6V,PBTS(Vth)為+6.3V,NBTS(Vth)為0.2V。
對上述氧化物半導體薄膜的膜特性進行評價,結果載子密度為5.7E+14(5.7×1014)/cm3,蝕刻速率為5.3nm/sec。
將關於樣品1至樣品19以如下之方式定義之原子比1至原子比4匯總示於表1,將樣品1至樣品19之評價結果匯總示於表2。
原子比1:(In+Sn)/(In+Zn+Ti+Sn)。
原子比2:Sn/(In+Sn)。
原子比3:Sn/(In+Zn+Ti+Sn)。
原子比4:Ti/(In+Zn+Ti+Sn)。
就電晶體特性之觀點而言,存在In的含量越多遷移率越高之傾向,且存在In或Sn的含量越多臨限值電壓越向負側偏移之傾向。若In及Sn少且Ti多,則存在下述傾向:臨限值電壓變高而使PBTS劣化,但NBTS改善。另一方面,若In及Sn多且Ti少,則存在下述傾向:臨限值電壓變低而使PBTS改善,但NBTS劣化。
若與樣品21之In-Ga-Zn-O系之氧化物半導體薄膜相比,則樣品1至樣品5之In-Ti-Zn-O系氧化物半導體薄膜的臨限值電壓低,若遷移率高則臨限值電壓成為低值。
關於遷移率,成為如下之結果:樣品1至樣品3為10cm2/Vs以上;相對於此,樣品4、樣品5的遷移率低於樣品21(In-Ga-Zn-O系)。
另一方面,根據樣品6至樣品20之In-Sn-Ti-Zn-O系氧化物半導體薄膜,相較於樣品21(In-Ga-Zn-O系),遷移率高,臨限值電壓低,因此PBTS/NBTS特性亦良好。
再者,根據Ti含量相對較高之樣品20之In-Sn-Ti-Zn-O系氧化物半導體薄膜,與樣品6至樣品19相比,遷移率低,PBTS之劣化大。
亦即,根據原子比1為0.36以上0.92以下、原子比2為0.02以上0.46以下、原子比3為0.01以上0.42以下、原子比4為0.01以上0.10以下之In-Sn-Ti-Zn-O系氧化物半導體薄膜,相較於In-Ga-Zn-O系,可獲得遷移率為10cm2/Vs以上之高電晶體特性。
進而,根據原子比1為0.48以上0.72以下、原子比2為0.03以上0.29以下、原子比3為0.02以上0.21以下、原子比4為0.03以上0.10以下之樣品8至樣品14之
In-Sn-Ti-Zn-O系氧化物半導體薄膜,可獲得20cm2/Vs以上之遷移率、0V以上2V以下之PBTS特性、-2V以上0V以下之NBTS特性等臨限值電壓的變動少而可靠性優異之電晶體特性。
確認到這些樣品8至樣品14之In-Sn-Ti-Zn-O系氧化物半導體薄膜於退火後亦為非晶。藉由氧化物半導體膜具有非晶結構,無需控制結晶尺寸或晶界。因此,於具備非晶結構的氧化物半導體膜作為活性層之薄膜電晶體中,有遷移率之偏差少,大面積化變得容易之優點。
活性層是否為非晶可藉由X射線繞射圖案或電子束繞射圖案等進行評價。
進而,根據樣品7至樣品19之In-Sn-Ti-Zn-O系氧化物半導體薄膜,可將蝕刻速率抑制為3nm/sec以下。藉此,可無需用以保護由該氧化物半導體薄膜構成之活性層免受源極/汲極電極形成用之蝕刻液影響之蝕刻終止層,而製造薄膜電晶體。
以上,對本發明之實施形態進行了說明,但當然本發明並不僅限定於上述之實施形態,而可進行各種變更。
例如,於以上之實施形態中,列舉所謂底部閘極型(逆交錯型)的電晶體為例進行了說明,但本發明亦可應用於頂部閘極型(交錯型)的薄膜電晶體。
另外,上述薄膜電晶體可用作液晶顯示器或有機EL顯示器等主動矩陣型顯示面板用之TFT。除此以外,上述電晶體可用作各種半導體裝置或電子機器之電晶體元件。
Claims (8)
- 一種氧化物半導體薄膜,由包含In、Zn、Ti及Sn之氧化物半導體構成;In/(In+Zn+Ti+Sn)之原子比為0.46以上0.57以下;(In+Sn)/(In+Zn+Ti+Sn)之原子比為0.48以上0.72以下;Sn/(In+Sn)之原子比為0.03以上0.29以下;Sn/(In+Zn+Ti+Sn)之原子比為0.02以上0.21以下;Ti/(In+Zn+Ti+Sn)之原子比為0.03以上0.04以下。
- 如請求項1所記載之氧化物半導體薄膜,其中遷移率為20cm2/Vs以上。
- 如請求項1或2所記載之氧化物半導體薄膜,其中前述氧化物半導體薄膜對酸性蝕刻液具有耐性。
- 一種薄膜電晶體,係具備由如請求項1所記載之氧化物半導體薄膜構成之活性層;遷移率為20cm2/Vs以上。
- 如請求項4所記載之薄膜電晶體,其中於60℃之溫度下將+30V之閘極電壓持續施加60分鐘之試驗的實施前後的臨限值電壓的變化量為0V以上2V以下。
- 如請求項4或5所記載之薄膜電晶體,其中於60℃之 溫度下將-30V之閘極電壓持續施加60分鐘之試驗的實施前後的臨限值電壓的變化量為-2V以上0V以下。
- 一種薄膜電晶體之製造方法,係製造具備由如請求項1所記載之氧化物半導體薄膜構成之活性層之薄膜電晶體的方法;於閘極電極上形成閘極絕緣膜;於前述閘極絕緣膜上利用濺鍍法形成前述活性層;形成以前述活性層作為基底膜之金屬層;利用濕式蝕刻法將前述金屬層進行圖案化,藉此形成源極電極及汲極電極。
- 一種濺鍍靶,係用以形成如請求項1至3中任一項所記載之氧化物半導體薄膜。
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