TWI776349B - 電子元件的轉移方法 - Google Patents

電子元件的轉移方法 Download PDF

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TWI776349B
TWI776349B TW110100614A TW110100614A TWI776349B TW I776349 B TWI776349 B TW I776349B TW 110100614 A TW110100614 A TW 110100614A TW 110100614 A TW110100614 A TW 110100614A TW I776349 B TWI776349 B TW I776349B
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electronic components
substrate
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林清儒
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台灣愛司帝科技股份有限公司
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Abstract

一種電子元件的轉移方法，首先，提供一轉移基板，其設有用以容置 電子元件的空腔，接著，使承載基板未與空腔對準之電子元件先接觸轉移基板之平面之未設置空腔之部分後，再釋放與空腔對準之電子元件，藉此，使被釋放的電子元件落至正確的位置。

Description

電子元件的轉移方法
本揭露是有關於一種轉移方法，且特別是有關於一種電子元件的轉移方法。
隨著技術的演進以及消費者需求的增加，各類電子裝置的功能越趨複雜，所需的電子元件數量也隨之增加。而為了減少不必要的體積以及並有效提升效能，電子元件的尺寸則往極小化的方向發展。
舉例來說，發光二極體(light emitting diode,LED)顯示裝置為近年來新型顯示器大力發展的技術之一，然而，為了滿足高解析度的需求，發光二極體顯示裝置正朝向由陣列排列的微米級發光二極體組成的方向發展，同時，帶來了巨量轉移的需求。
因此，如何將電子元件快速準確的進行轉移，為本領域重要發展方向之一。
本揭露提供一種電子元件的轉移方法，其使承載基板未與空腔對準之電子元件先接觸轉移基板之平面未設置空腔之部分後，再釋放與空腔對準 之電子元件，此外，轉移基板設有用以容置承載基板之電子元件的空腔，使被釋放的電子元件藉由空腔的限制而落至正確的位置，達到快速且準確轉移之目的。
基於上述，本揭露之電子元件的轉移方法其使承載基板未與空腔對準之電子元件先接觸轉移基板之平面未設置空腔之部分後，再釋放與空腔對準之電子元件，因此能減少電子元件於釋放時與轉移基板之距離，且轉移基板設有用以容置承載基板之電子元件的空腔，使被釋放的電子元件藉由空腔的限制而落至正確的位置，達到快速且準確轉移之目的。故，本揭露之電子元件的轉移方法具有良好的製程良率。
為讓本揭露的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
110:承載基板
111、111a、111b:電子元件
120:承載基板
121、121a、121b:電子元件
130:承載基板
131、131a、131b:電子元件
200:轉移基板
210:平面
211:空腔
300:承載基板
310:平面
311:黏膠模
圖1A至圖1D是根據本揭露的一實施例的電子元件的轉移方法的流程示意圖。
圖2A至圖2F是根據本揭露的一實施例的發光二極體晶片的轉移方法的流程示意圖。
圖1A至圖1D是一種電子元件的轉移方法的流程示意圖。請參照圖1A，首先，提供承載基板110以及轉移基板200，其中承載基板110上承載有多數個電子元件111，轉移基板200定義有一平面210，於平面210上設有多數個 空腔211。進一步的，承載基板110例如為一黏膠膜或配置有一黏膠膜的基板，以黏著並承載多數個電子元件111，具體來說，黏膠膜的材料例如為聚醯亞胺，但不限於此。進一步的，轉移基板200可為一透明基板，具體來說，例如是玻璃基板、石英基板或藍寶石基板，但不限於此。進一步的，由單一承載基板110所承載的多數個電子元件111具有相同的元件尺寸。具體來說，該電子元件111的元件尺寸可等於或大於於100微米(μm)，該電子元件111例如為積體電路晶片，但不以此為限。具體來說，該電子元件111之元件尺寸可不大於100微米(μm)，該電子元件111例如為發光二極體晶片，例如為次毫米發光二極體(Mini LED)晶片或微發光二極體(Micro LED)晶片，但不限於此。進一步的，該多數個空腔的深度可等於或小於該電子元件111的高度。進一步的，該多數個空腔211形成於該轉移基板200之平面210的方法可以是一雷射燒蝕或一化學蝕刻，但不限於此。具體來說，該雷射燒蝕所選用之雷射例如為可見光或不可見光，該化學蝕刻例如為乾式蝕刻或濕式蝕刻，但不限於此。
請繼續參照圖1A，接著，將承載基板110上之多數個電子元件111面對轉移基板200上設有多數個空腔211之平面210，並進行對位，使多數個電子元件111中的部分電子元件對準轉移基板200上之空腔211(例如電子元件111a)，並使其他之電子元件111未與該轉移基板200上之空腔211對準(例如電子元件111b)。其中，對位的方法例如為一影像式定位，但不限於此。
請參照圖1B，然後，改變承載基板110和轉移基板200之相對位置，使二基板相互接近，即，使承載基板100和轉移基板200的其中一者往另一者接近，並使上述未與空腔211對準之電子元件111接觸轉移基板200之平面210未設置空腔211之部分(例如電子元件111b)。其中，可以一力感測或一光學距離 感測判斷上述未與空腔211對準之電子元件111是否接觸該轉移基板200之平面210未設置空腔211之部分。
請參照圖1C，然後，釋放該與空腔211對準之電子元件111(例如為電子元件111a)，使電子元件111落於空腔211內。其中，釋放的方法例如為施加能量於與空腔211對準之電子元件111，使該承載基板110之黏膠層之黏性下降，電子元件111進而脫離承載基板110而被釋放。具體來說，可以雷射光或超音波施加能量於與空腔211對準之電子元件111之黏膠層，如圖1C，但不限於此。
請參照圖1D，而後，改變承載基板110和轉移基板200之相對位置，使二基板相互遠離，即，使承載基板100和轉移基板200的其中一者往另一者遠離，並使上述未與空腔211對準之電子元件111不接觸轉移基板200之平面210未設置空腔211之部分。在本實施例中，承載基板100之未與空腔211對準之電子元件111更可進一步用於下一次的轉移。
於本實施例中，由於本揭露之轉移方法是使承載基板110之未與空腔211對準之電子元件111先接觸轉移基板200之平面210之未設置空腔211之部分後，再釋放與空腔211對準之電子元件111，因此可將承載基板110的電子元件111與轉移基板200之平面210間的間隔限制於電子元件111之高度，藉此，減少電子元件111與轉移基板200的距離，有效降低電子元件111在落下過程中發生位移或脫離轉移基板200的機會。此外，轉移基板200設有用以容置承載基板110之電子元件111的空腔211，更使被釋放的電子元件111藉由空腔211的限制而置於正確的位置。故，本揭露之轉移方法具有良好的製程良率。
以下將介紹將本揭露應用於發光二極體晶片的轉移方法。特別一提的是，以下針對轉移方法的整體步驟進行說明，其中每一步驟的詳細介紹可參照前文中所述，於此不贅述。
請參照圖2A，首先，如圖1A至圖1D所示的轉移方法，提供承載基板110以及轉移基板200，將承載基板110上之多數個電子元件111面對轉移基板200上設有多數個空腔211之平面210，並進行對位，使多數個電子元件111中的部分電子元件對準轉移基板200上之空腔211，然後，改變承載基板110和轉移基板200之相對位置，並使上述未與空腔211對準之電子元件111接觸轉移基板200之平面210未設置空腔211之部分，之後，將承載基板110之與空腔211對準的電子元件111釋放至空腔211。其中，電子元件111為用以顯示紅色(R)的發光二極體晶片。
請參照圖2B，首先如圖1A至圖1D所示的轉移方法，提供承載基板120，將承載基板120上之多數個電子元件121面對轉移基板200上設有多數個空腔211之平面210，並進行對位，使多數個電子元件121中的部分電子元件對準轉移基板200上之未容置電子元件111的空腔211(例如電子元件121a)，然後，改變承載基板120和轉移基板200之相對位置，並使上述未與空腔211對準之電子元件121接觸轉移基板200之平面210未設置空腔211之部分(例如電子元件121b)，之後，將承載基板120之與空腔211對準的電子元件111釋放至空腔211。其中，電子元件121為用以顯示綠色(G)的發光二極體晶片。
請參照圖2C，如圖1A至圖1D所示的轉移方法，提供承載基板130，將承載基板130上之多數個電子元件131面對轉移基板200上設有多數個空腔211之平面210，並進行對位，使多數個電子元件131中的部分電子元件對準 轉移基板200上之未容置電子元件111或電子元件121的空腔211(例如電子元件131a)，然後，改變承載基板130和轉移基板200之相對位置，並使上述未與空腔211對準之電子元件131接觸轉移基板200之平面210未設置空腔211之部分(例如電子元件131b)，之後，將承載基板130之與空腔211對準的電子元件131釋放至空腔211。其中，電子元件131為用以顯示藍色(B)的發光二極體晶片。因此，轉移基板200的每一個空腔211皆容置了電子元件111、電子元件121以及電子元件131的其中一者，且電子元件111、電子元件121以及電子元件131於該轉移基板200的多數個空腔211形成一畫素陣列排列。
請參照圖2D，然後，提供承載基板300，其具有平面310，設有黏膠模311。
請參照圖2E，然後，使該承載基板300的平面310面對轉移基板200上設有多數個空腔211之平面210，並進行對位，並改變承載基板300和轉移基板200之相對位置，並使承載基板300之黏膠模311接觸並黏著轉移基板200之多數個空腔211中的電子元件111、121及131。
請參照圖2F，而後，改變承載基板300和該轉移基板200之相對位置，使該二基板相互遠離，使容置於空腔211內之電子元件111、121或131因為黏著於該承載基板300的平面310而離開空腔211，並被轉移至承載基板300。
於本實施例中，於轉移基板200上形成之畫素陣列排列可根據顯示裝置的電路基板的畫素陣列來決定。因此，轉移至承載基板300之電子元件111、121及131所形成的畫素陣列排列可以單次的轉移製程轉移至顯示裝置之電路基板。藉此，可快速且準確完成電路基板上的巨量的畫素轉移，減少顯示裝置製程中的轉移成本，並具有良好的製程良率。
綜上所述，由於本揭露之轉移方法是使承載基板未與空腔對準之電子元件先接觸轉移基板之平面未設置空腔之部分後，再釋放與空腔對準之電子元件，因此承載基板的電子元件與轉移基板之平面間的間隔可有效降低，減少電子元件在落下過程中發生位移的機會。此外，轉移基板設有用以容置承載基板之電子元件的空腔，使被釋放的電子元件藉由空腔的限制而落至正確的位置。故，本揭露之轉移方法具有良好的製程良率。
雖然本揭露已以實施例揭露如上，然其並非用以限定本揭露，任何所屬技術領域中具有通常知識者，在不脫離本揭露的精神和範圍內，當可作些許的更動與潤飾，故本揭露的保護範圍當視後附的申請專利範圍所界定者為準。
110:承載基板
111、111a、111b:電子元件
200:轉移基板
210:平面
211:空腔

Claims (9)

  1. 一種電子元件的轉移方法，其步驟包括：提供一承載基板以及一轉移基板，其中該承載基板上承載有多數個電子元件，該轉移基板上有一平面，於該平面上設有多數個空腔；將該承載基板上之多數個電子元件面對該轉移基板上設有多數個空腔之平面，並進行對位，使該多數個電子元件中的部分電子元件對準該轉移基板上之空腔，並使其他之電子元件未與該轉移基板上之空腔對準；改變該承載基板和該轉移基板之相對位置，使該二基板相互接近，並使上述未與空腔對準之電子元件接觸該轉移基板之平面未設置空腔之部分；以及以一雷射光或一超音波釋放該與空腔對準之電子元件，使該電子元件落於空腔內。
  2. 如請求項1所述之電子元件的轉移方法，其中，該多數個空腔的深度等於或小於該電子元件的高度。
  3. 如請求項1述之電子元件的轉移方法，其中，該將該承載基板上之多數個電子元件面對該轉移基板上設有多數個空腔之平面，並進行對位，使該多數個電子元件中的部分電子元件對準該轉移基板上之空腔，並使其他之電子元件未與該轉移基板上之空腔對準之步驟係以一影像式定位進行上述對位。
  4. 如請求項1所述之電子元件的轉移方法，其中，該改變該承載基板和該轉移基板之相對位置，使該二基板相互接近，並使上述未與空腔對準之電子元件接觸該轉移基板之平面未設置空腔之部分之步驟係以一力感測或一光學距離感測判斷上述未與空腔對準之電子元件是否接觸該轉移基板之平面未設置空腔之部分。
  5. 如請求項1所述之電子元件的轉移方法，其中，該電子元件為一發光二極體晶片。
  6. 如請求項5所述之電子元件的轉移方法，其中，該發光二極體晶片之元件尺寸大於或等於100微米。
  7. 如請求項5所述之電子元件的轉移方法，其中，該發光二極體晶片之元件尺寸小於100微米。
  8. 如請求項1所述之電子元件的轉移方法，其中，該電子元件為一積體電路晶片。
  9. 如請求項1所述之電子元件的轉移方法，其中，該多數個空腔係以一雷射燒蝕或一化學蝕刻形成於該轉移基板之平面。
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