TWI772545B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TWI772545B TWI772545B TW107137508A TW107137508A TWI772545B TW I772545 B TWI772545 B TW I772545B TW 107137508 A TW107137508 A TW 107137508A TW 107137508 A TW107137508 A TW 107137508A TW I772545 B TWI772545 B TW I772545B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Abstract
本發明揭示一種實施場板之半導體裝置。該半導體裝置包括源極、閘極及汲極之電極;絕緣膜,其至少覆蓋該汲極電極;場板,其包括與該閘極電極重疊之第一部分及不與該閘極電極重疊之第二部分;以及源極互連結構,與該源極電極連接。本發明之該半導體裝置之特徵為該第一部分及該第二部分兩者均與該源極互連結構電連接。
Description
本發明係關於一種半導體裝置,特定言之,本發明係關於一種主要由氮化物半導體材料製成之半導體裝置。
日本專利申請案早期公開第JP2008-277604A號已揭示一種具有場板之半導體裝置型場效電晶體(FET)。主要由氮化物半導體材料製成之半導體裝置有時提供場板以便調節其閘極電極之邊緣處誘發之電場。場板一般覆蓋其間具有絕緣膜之閘極電極,且可僅在與深閘極偏壓同時移除高汲極偏壓的硬條件之後遏制汲極電流之減小,通常將其稱作汲極電流崩潰。場板亦將閘極電極與汲極電極屏蔽。
場板通常與源極電極連接,使得場板延伸至圍繞裝置之主動區域的非主動區域,且變為與自源極電極延伸之源極互連結構接觸,其中場板、源極電極及源極互連結構之彼等佈置已揭示於例如上文所提及之先前專利文獻中。然而,場板有可能在固有地由閘極電極之側面形成之台階處破裂。
本發明之一態樣涉及一種半導體裝置,其包括源極、汲極及閘極之電極;絕緣膜;場板:以及源極互連結構。彼等電極沿縱向方向
延伸。絕緣膜至少覆蓋閘極電極且在閘極電極與汲極電極之間延伸。場板提供與其間插入絕緣膜之閘極電極重疊的第一部分,及不與閘極電極重疊且在閘極電極與汲極電極之間的絕緣膜上延伸的第二部分。源極互連結構與源極電極接觸且自其延伸。本發明之半導體裝置之特徵為,不僅場板之第二部分且亦場板之第一部分與源極互連結構電連接。
1A:半導體裝置
11:基板
12:通道層
13:障壁層
18:半導體堆疊
21:絕緣膜
21a:開口
22:絕緣膜
22a:部分/絕緣膜
22b:部分/絕緣膜
22c:開口
22d:開口
23:絕緣膜
31:汲極
32:源極
33:閘極
33a:延伸部分
34:場板
34a:密集點線區域/部分
34b:稀疏點線區域/部分
36:閘極互連結構
41:汲極互連結構
41a:末端
42:源極互連結構
42a:末端
100:裝置
A1:主動區域
A2:非主動區域
IIa-IIa:線
IIb-IIb:線
IVb-IVb:線
Vb-Vb:線
VIb-VIb:線
VIIIa-VIIIa:線
VIIIb-VIIIb:線
VIIIc-VIIIc:線
W1:寬度
W2:寬度
參考圖式,將自本發明之較佳實施例之以下詳細描述較佳地理解本發明之前述及其他目的、態樣及優點,其中:圖1為根據本發明之實施例的展示半導體裝置的平面視圖;圖2A及圖2B為分別沿圖1中所指示之線IIa-IIa及線IIb-IIb截取的圖1中所展示之半導體裝置的橫截面視圖;圖3A為圖1中所展示之半導體裝置於其形成方法中之平面視圖,且圖3B為圖1中所展示之半導體裝置於其形成方法中之橫截面視圖,其中圖3B沿圖3A中所展示之線IIIb-IIIb截取;圖4A為圖1中所展示之半導體裝置於其形成方法中之平面視圖,且圖4B為圖1中所展示之半導體裝置於其形成方法中之橫截面視圖,其中圖4B沿圖4A中所展示之線IVb-IVb截取;圖5A為圖1中所展示之半導體裝置於其形成方法中之平面視圖,且圖5B為圖1中所展示之半導體裝置於其形成方法中之橫截面視圖,其中圖5B沿圖5A中所展示之線Vb-Vb截取;圖6A為圖1中所展示之半導體裝置於其形成方法中之平面視圖,且圖6B為圖1中所展示之半導體裝置於其形成方法中之橫截面視
圖,其中圖6B沿圖6A中所展示之線VIb-VIb截取;圖7為附有場板之習知半導體裝置的平面視圖;且圖8A至圖8C為圖7中所展示之習知半導體裝置的橫截面視圖,其中圖8A至圖8C分別沿圖7中所展示之線VIIIa-VIIIa、線VIIIb-VIIIb及線VIIIc-VIIIc截取。
接下來,將參考附圖來描述根據本發明之實施例。然而,本發明並不受限於實施例且具有限定於所附申請專利範圍中之範疇,且具有在其範疇及等效物內之所有改變及修改。在圖式之描述中,彼此相同或類似之數字或符號將在無重複解釋的情況下係指彼此相同或類似之要素。
圖1為根據本發明之實施例的展示半導體裝置1A的平面視圖,圖2A及圖2B為分別沿各自於圖1中所指示之線IIa-IIa及線IIb-IIb截取之半導體裝置1A的橫截面視圖。圖1略去絕緣膜21至絕緣膜23以供簡化解釋。
實施例之半導體裝置1A提供基板11、設置於基板11上之半導體堆疊18以及各自設置於半導體堆疊18上之汲極31、源極32及閘極33的電極。經製備以用於使半導體堆疊於其平面主表面上晶膜生長之基板11可由碳化矽(SiC)、藍寶石(Al2O3)、矽(Si)、鑽石(C)等製成。基板可具有大約500μm之厚度。
本發明實施例之半導體裝置1A(其為一種類型之場效電晶體(FET),確切而言為一種類型之高電子遷移率電晶體(HEMT))包括半導體堆疊18中之通道層12及障壁層13,其中通道層12及障壁層13於基板11上晶膜生長且在通道層12中與障壁層13相對之介面處之誘發二維電子氣
(2DEG)。2DEG可操作為HEMT 1A之通道。通道層12可由厚度為約1μm,特定言之0.5μm至1.2μm的氮化鎵(GaN)製成。障壁層13可由例如厚度為約20nm,特定言之10nm至30nm的氮化鋁鎵(AlGaN)、氮化銦鋁(InAlN)及/或氮化銦鋁鎵(InAlGaN)製成。本發明實施例提供由厚度為20nm的Al0.25Ga0.75N製成之障壁層13。半導體堆疊18可進一步於障壁層13上提供頂蓋層,其中該頂蓋層可由厚度為約5nm的GaN或n型GaN製成。
半導體堆疊18分為兩個部分,其中之一個部分為主動區域A1,而另一個為圍繞主動區域A1之非主動區域A2。主動區域A1可操作為半導體裝置1A,而非主動區域A2未展示載子運輸之功能;確切而言,藉由在其中植入氬離子(Ar+)以增加其中之電阻率而形成的非主動區域A2。因此,非主動區域A2可電隔離主動區域A1。
汲極31及源極32之電極經提供於主動區域A1中且與其接觸。實施例之半導體裝置1A提供一個汲極電極31及將汲極電極31包夾於其間之兩個源極電極32。汲極31及源極32之電極藉由摻合厚度為約10nm之鈦(Ti)與厚度為約300nm之鋁(Al)之經堆疊金屬而形成,該等電極具有延伸於各別縱向方向(特定言之,圖1中之向上及向下方向)之矩形平面形狀及一種被稱為歐姆電極之類型,其展示非整流特性。厚度為約10nm之另一Ti層可覆蓋Al層。
汲極31及源極32之電極可與障壁層13接觸。在替代方案中,當半導體堆疊18於障壁層13上提供頂蓋層時,電極可與頂蓋層接觸。在另一替代方案中,可藉由移除障壁層13之部分而使汲極31及源極32之電極與通道層12接觸。
非主動區域A2可提供汲極互連結構41,該汲極互連結構連
接藉由非主動區域A2之存在而各自隔離之半導體裝置1A。非主動區域A2亦可提供連接安置於各別主動區域A1中之源極電極的源極互連結構42。在本實施例中,汲極互連結構41及源極互連結構42沿汲極電極31及源極電極32之縱向方向延伸,且沿該縱向方向但相反之方向提取。亦即,汲極互連結構41與汲極電極31重疊且在圖1中朝上提取;而源極互連結構42與源極電極32重疊但在圖1中朝下提取。更特定言之,汲極電極31經由汲極互連結構41提取,該汲極互連結構沿汲極電極31之縱向方向延伸且在汲極電極31之一個末端處交叉但其另一末端41a在汲極電極31內。
源極電極32經由源極互連結構42提取,該源極互連結構在源極電極32之一個末端處交叉時沿源極電極32之縱向方向延伸,但源極互連結構42之另一末端42a存在於待與彼處之場板34連接的非主動區域A2中。汲極互連結構41及源極互連結構42可藉由以4μm至6μm之厚度鍍金(Au)來形成。
閘極電極33沿縱向方向在汲極互連結構41之側面中自主動區域A1延伸至非主動區域A2。本發明實施例提供兩個閘極電極33,該等閘極電極將汲極電極31包夾於其間且置於汲極電極31與各別源極電極32之間。因此,閘極電極33經安置與汲極電極31及源極電極32平行。閘極電極33可具有鎳(Ni)、鈀(Pd)及金(Au)之經堆疊金屬,其中彼等金屬可分別具有約0.1μm、約50nm及約0.5μm之厚度,其中Ni與半導體堆疊18形成蕭特基接觸(Schottky contact)。考慮到各別金屬之沈積條件,閘極電極33較佳具有大於0.3μm之總厚度或高度,但自閘極電極33經第二絕緣膜22穩定覆蓋之視角而言,該閘極電極較佳具有小於0.7μm之總厚度或高度。兩個閘極電極33與閘極互連結構36連接,該閘極互連結構沿主動區
域A1之邊緣在非主動區域A2中橫向地延伸。閘極互連結構36連接各自形成於基板11上之半導體裝置1A。
閘極電極33在其一個末端中朝向非主動區域A2中之源極互連結構42彎曲。特定言之,閘極電極33在與閘極互連結構36相對之側面中穿過主動區域A1與非主動區域A2之間的介面,且在其延伸部分33a處朝向源極互連結構42彎曲。閘極電極33之延伸部分33a存在於源極電極32之外部。如圖2B中所展示,閘極電極33之延伸部分33a置於非主動區域A2與將場板34包夾於其間的源極互連結構42之間。
如圖2A及圖2B中所展示,本發明實施例之HEMT 1A進一步提供第一絕緣膜21至第三絕緣膜23以及場板34。絕緣膜21至絕緣膜23鈍化半導體堆疊18及汲極31、源極32、閘極33之電極以及場板34之表面。
覆蓋暴露於汲極31、源極32及閘極33之電極之間的半導體堆疊18的第一絕緣膜21提供其內暴露出半導體堆疊18之表面的至少三個開口,其中該等開口為汲極開口、源極開口及閘極開口。汲極電極31填充汲極開口,源極電極32填充源極開口,且閘極電極填充閘極開口。汲極31、源極32及閘極33之電極可與各別開口中之半導體堆疊18的表面直接接觸。閘極開口沿使汲極電極31與源極電極32連接之方向具有0.4μm之長度,亦即HEMT具有0.4μm之閘極長度。可為無機材料之第一絕緣膜21具有約50nm之厚度,該無機材料含有矽(Si),典型地為氮化矽(SiN)。
設置於第一絕緣膜21上之第二絕緣膜22覆蓋汲極31、源極32及閘極33之電極。第二絕緣膜22於汲極電極31及源極電極32上具有開口22c及開口22d,汲極互連結構41及源極互連結構42經由該等開口形
成。汲極互連結構41可經由開口22c與汲極電極31接觸,而源極互連結構42可經由開口22d與源極32接觸。
第二絕緣膜22提供覆蓋閘極電極33之部分22a及存在於閘極電極33與汲極電極31之間的另一部分22b,其中前一部分22a設置於閘極電極33上且在該閘極電極上方,而後一部分22b設置於閘極電極33與汲極電極31之間的主動區域A1上方。兩個部分22a及部分22b形成起始於閘極電極33之存在的台階。第二絕緣膜22亦可由無機材料製成,該無機材料含有Si,通常為SiN,具有0.4μm至0.6μm之厚度,其中該實施例具有厚度為0.5μm之第二絕緣膜22。
設置於第二絕緣膜22上之第三絕緣膜23覆蓋汲極互連結構41及源極互連結構42。第三絕緣膜23可亦由無機材料製成,該無機材料含有Si,通常為SiN,較佳具有0.1μm之厚度。第三絕緣膜23可防止汲極互連結構41及源極互連結構42短路及氧化。
場板34可由例如來自基板11之側面的鈦(Ti)及金(Au)之經堆疊金屬製成。本發明實施例之場板34提供兩個部分。如圖1中所展示,由圖2A及圖2B中之稀疏點線區域34a所表示的部分中之一者可在閘極電極33上方延伸,而表示為圖2A及圖2B中之密集點線區域34b之另一部分延伸至閘極電極33與汲極電極31之間的區域。另外,如圖2A中所展示,場板34在其第一部分34a中與閘極電極33重疊而在其不與閘極電極33重疊的第二部分34b中在閘極電極33與汲極電極41之間的第二絕緣膜22上延伸。第一部分34a較佳地具有窄於2μm之寬度。場板34覆蓋有第三絕緣膜23以防止其場板34氧化。
場板34可將閘極電極33與汲極電極31電屏蔽,且弱化集中
在閘極電極33之邊緣處的電場。場板34較佳地具有小於閘極電極33之厚度的厚度。舉例而言,場板34在其第一金屬中與第二絕緣膜22接觸,其可由鈦(Ti)製成,具有5nm至30nm,通常10nm之厚度;而第二金屬設置於第一金屬上方,其可由金(Au)製成,較佳具有0.1μm至0.3μm,通常0.2μm之厚度。
場板34在其一個末端中在與閘極互連結構36相對之側面中延伸至自主動區域A1突出之非主動區域A2中,於彼處以大體上90°彎曲,且在源極電極32之末端外部的區域中延伸。亦即,場板34之各別部分34a及34b各自存在於非主動區域A2中之源極電極32外部的區域中。
與插入抵靠閘極電極33之第二絕緣膜22a之閘極電極33重疊的第一部分34a亦自主動區域A1突出至非主動區域A2中,於彼處朝向源極電極32以90°彎曲,且於彼處與源極互連結構42接觸。
同樣,覆蓋閘極電極33與汲極電極31之間的第二絕緣膜22b之部分的場板34之第二部分34b延伸超出主動區域A1至源極電極32外部的非主動區域A2中,以便圍繞場板34之第一部分34a;接著於彼處與源極互連結構42接觸。因此,即使當第一部分34a及第二部分34b藉由形成於起始自經增厚閘極電極33之第二絕緣膜22中之台階而以物理方式隔離時;部分34a及部分34b兩者通常在非主動區域A2中之源極電極32外部處與源極互連結構42連接。
場板34較佳具有寬度W2,該寬度為第一部分34a及第二部分34b於源極電極42外部的非主動區域A2中之總寬度,其大於寬度W1,該寬度W1亦為第一部分34a及第二部分34b於主動區域A1中之總寬度。寬度W1可為例如0.5μm至2.0μm,其在本實施例中為1.0μm;而寬度W2可
為例如0.5μm至10μm,其在本實施例中為3.0μm。
接下來,將描述根據本發明之實施例形成半導體裝置1A的方法。圖3A至圖6A為形成裝置1A之方法的各別步驟的圖1中所展示之半導體裝置的平面視圖,圖3B至圖6B為分別對應於圖3A至圖6A的橫截面視圖,其中橫截面視圖沿與其相對應之圖式中所指示的各別線截取。
該方法首先藉由使包括通道層12及障壁層13之氮化物半導體堆疊在基板11上依序且晶膜生長來製備半導體堆疊18。金屬有機化學氣相沈積(MOCVD)技術可易於使半導體堆疊生長。其後,半導體堆疊18分為主動區域A1及非主動區域A2。特定言之,用掩模覆蓋待轉化為主動區域A1之區域,將例如氬(Ar+)離子離子植入至未經覆蓋有掩模之剩餘區域中可形成圍繞主動區域A1之非主動區域A2。其後,汲極31及源極32之電極可在主動區域A1上形成。如圖3A中所展示,汲極電極31及源極電極32具有矩形平面形狀。
其後,汲極電極31、源極電極32及自電極31及電極32暴露之其他區域經第一絕緣膜21充分地覆蓋,其中第一絕緣膜21可藉由化學氣相沈積技術形成。在替代方案中,第一絕緣膜21首先經沈積於半導體堆疊18上;接著於第一絕緣膜21中形成開口。汲極31及源極32之電極形成於半導體堆疊18中,以便填充開口。接著,開口21a(即閘極開口)形成於第一絕緣膜21中以暴露出其中之半導體堆疊18之表面,且閘極電極33經沈積以便填充閘極開口21a且在環繞閘極開口21a之第一絕緣膜21上部分地延伸,如圖4B中所展示。在本實施例中,如圖4A中所展示,閘極電極33自主動區域A1突出且朝向非主動區域A2中之源極電極32彎曲以在彼處形成延伸部分33a。因此,閘極電極33之延伸部分33a存在於非主動區域
A2中之源極電極32外部,且閘極電極33在其延伸部分33a中與半導體堆疊18直接接觸,但對半導體裝置1A之操作無影響,此係因為延伸部分33a存在於非主動區域A2中。
其後,如圖5A及圖5B中所展示,第二絕緣膜22覆蓋汲極31、源極32及閘極33之電極,其中第二絕緣膜22可藉由CVD技術來沈積。其後,該方法形成場板34。特定言之,首先在第二絕緣膜22上製備圖案化光阻,其未說明於圖中,其中圖案化光阻具有與場板34相對應之開口。光阻中之開口將第一部分34a之區域與第二部分34b之另一區域組合。將金屬沈積於第二絕緣膜22上及圖案化光阻上,且移除積聚於圖案化光阻上之殘餘金屬,可將場板34之僅第一部分34a及第二部分34b保留於第二絕緣膜22上,其通常稱作剝離程序。如圖5B中所展示,因為第二絕緣膜22中台階的存在,所以表示為與閘極電極33重疊之稀疏點線區域的第一部分34a以物理方式與表示為圖5A中之密集點線區域的第二部分34b隔離。
其後,如圖6A及圖6B中所展示,該方法藉由在第二絕緣膜22中形成各別開口22c及開口22d而暴露汲極31、源極32及閘極33之電極。接著,藉由鍍金(Au)來形成汲極41與源極42之互連結構。汲極互連結構41朝向與閘極互連結構36相對之主動區域A1的一個側面延伸;而源極互連結構42朝向閘極互連結構36之側面延伸。另外,源極互連結構42在汲極互連結構41之側面中亦延伸跨過源極電極32之邊緣,且在源極電極32外部之非主動區域A2內突出。接著,源極互連結構42可在彼處與場板34之第一部分34a及第二部分34b兩者接觸。因此,第一部分34a及第二部分34b可以物理方式與源極互連結構42接觸,儘管由於形成於第二絕緣
膜22中之陡峭台階,第一部分34a與第二部分34b在主動區域A1內以物理方式隔離。最終,藉由第三絕緣膜23覆蓋汲極41、源極42、閘極36之互連結構以及場板34之第一部分34a及第二部分34b,其可藉由CVD方法形成,如此可完成本發明實施例之半導體裝置1A。
將與圖7中所展示之習知半導體裝置進行比較來描述半導體裝置1A及其形成方法之優點,圖7為習知半導體裝置100之平面視圖;且圖8A至圖8C為分別沿圖7中所指示之線VIIIa-VIIIa、線VIIIb-VIIIb及線VIIIc-VIIIc截取之習知裝置100的橫截面視圖。圖7略去絕緣膜21至絕緣膜23。
場板通常藉由例如金屬之真空蒸發形成以易於移除積聚於光阻上之殘餘金屬,其使得難以覆蓋閘極電極之側面,或第二絕緣膜22中的台階的側面,該第二絕緣膜藉由場板之金屬反映閘極金屬之較大厚度。閘極電極需要形成為較厚的以便減小其閘極電阻,而場板可形成為較薄的,此係因為其中無電流流動且其電阻變得可忽略。因此,自經增厚閘極電極衍生之台階有可能導致場板之破裂。上述場板之破裂可能無規律地出現於半導體裝置1A內。
參考圖7及圖8A至圖8C,習知半導體裝置100不具有閘極電極33之延伸部分33a;亦即僅場板34延伸至源極電極32外部且在彼處與源極互連結構42連接。當閘極電極33,確切而言自經增厚閘極金屬衍生之台階有可能在與閘極金屬重疊之部分與環繞閘極金屬且不與其重疊之另一部分之間的閘極金屬中留下破裂時,前一部分不與降低場板34之功能的源極互連結構42電連接,亦即將閘極電極33與汲極電極33屏蔽且調節由閘極電極31形成之場強。同樣,場板34之破裂可改變閘極電極33與源極
電極32之間的寄生電容。
根據本實施例之半導體裝置1A使閘極電極33延長至源極電極32外部以在彼處形成延伸部分33a,其意謂即使當第一部分34a於自經增厚閘極電極33衍生的第二絕緣膜22中之台階處藉由破裂而以物理方式與第二部分34b隔離時,不僅第二部分34b且亦第一部分34a存在於源極電極32外部中且可在彼處與源極互連結構42電連接。因此,場板34可與源極電極32穩定地連接且使其電位穩定。場板34之第二部分34b亦可與源極電極32穩定地連接作為習知半導體裝置100。
源極電極32外部中之場板34可較佳地具有沿電極31至電極33之縱向方向的寬度W2,該寬度比沿電極31至電極33之橫向方向的寬度W1更寬,此形成場板34與源極互連結構42之間的電連接。因為閘極電極33之延伸部分33a存在於半導體裝置1A之非主動區域A2中,所以半導體裝置1A之效能,確切而言關於閘極電極33之電流電壓效能可能不會受到影響。
雖然已出於說明之目的而在本文中描述本發明之具體實施例,但許多修改及改變將對熟習此項技術者變得顯而易見。舉例而言,上文所描述之實施例集中於主要由氮化物半導體材料所製成之HEMT的半導體裝置類型,本發明可適用於其他類型之半導體裝置且由除氮化物半導體材料以外的材料製成。另外,實施例集中於具有兩個閘極電極及兩個場板之半導體裝置。然而,本發明可適用於具有單個場板之單個閘極電極的裝置,或各自附有各別場板之三個或更多個閘極電極。因此,所附申請專利範圍意欲涵蓋如屬於本發明之真實精神及範疇內之所有此類修改及改變。
本申請案基於且主張2017年10月24日申請之日本專利申請案第2017-205093號之優先權益,該專利申請案之全部內容以引用之方式併入本文中。
1A:半導體裝置
31:汲極
32:源極
33a:延伸部分
33:閘極
34a:密集點線區域/部分
34b:稀疏點線區域/部分
36:閘極互連結構
41:汲極互連結構
41a:末端
42a:末端
42:源極互連結構
A1:主動區域
A2:非主動區域
IIa-IIa:線
IIb-IIb:線
W1:寬度
W2:寬度
Claims (6)
- 一種半導體裝置,其包含:源極電極、閘極電極及汲極電極,其各自沿縱向方向延伸;絕緣膜,其覆蓋至少該閘極電極且在該閘極電極與該汲極電極之間延伸;場板,其具有第一部分及第二部分,該第一部分與其間插入該絕緣膜之該閘極電極重疊,該第二部分不與該閘極電極重疊且在該閘極電極與該汲極電極之間的該絕緣膜上延伸;以及源極互連結構,其與該源極電極電連接且自其延伸,其中該第一部分及該第二部分與該源極互連結構電連接;及其中該場板之該第一部分及該第二部分以物理方式彼此隔離。
- 如請求項1之半導體裝置,其進一步包括主動區域以及圍繞該主動區域之非主動區域,該源極電極、該汲極電極及該閘極電極存在於該主動區域中,其中該閘極電極於該非主動區域中之該源極電極外部之區域中具有延伸部分,該延伸部分經其間插入該絕緣膜之該場板之該第一部分覆蓋且由該第二部分圍繞,其中該第一部分及該第二部分中之該場板與該源極電極外部之之區域中之該源極互連結構接觸。
- 如請求項2之半導體裝置, 其中該源極電極及該汲極電極沿著其縱向方向具有矩形平面形狀,其中該場板具有沿著該源極電極之外部之區域的縱向方向的寬度,該寬度比在該源極電極與該閘極電極之間的區域中沿著與該縱向方向相交之橫向方向更寬。
- 如請求項1之半導體裝置,其中該閘極電極具有0.3μm至0.7μm之厚度,且該場板具有0.1μm至0.3μm之厚度。
- 如請求項1之半導體裝置,其中該絕緣膜具有0.1μm至0.3μm之厚度。
- 如請求項1之半導體裝置,其中該源極互連結構具有4μm至6μm之厚度。
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