TWI770661B - 單結晶製造裝置及單結晶的製造方法 - Google Patents
單結晶製造裝置及單結晶的製造方法 Download PDFInfo
- Publication number
- TWI770661B TWI770661B TW109138395A TW109138395A TWI770661B TW I770661 B TWI770661 B TW I770661B TW 109138395 A TW109138395 A TW 109138395A TW 109138395 A TW109138395 A TW 109138395A TW I770661 B TWI770661 B TW I770661B
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- diameter
- circle
- fusion
- camera
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 282
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 230000004927 fusion Effects 0.000 claims abstract description 98
- 239000007788 liquid Substances 0.000 claims abstract description 52
- 238000005259 measurement Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000155 melt Substances 0.000 claims abstract description 24
- 238000009434 installation Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims abstract description 7
- 238000012937 correction Methods 0.000 claims description 39
- 238000004364 calculation method Methods 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 83
- 229910052710 silicon Inorganic materials 0.000 description 83
- 239000010703 silicon Substances 0.000 description 83
- 239000010453 quartz Substances 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 238000003384 imaging method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000004033 diameter control Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003702 image correction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
- G01B11/10—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
- G01B11/105—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving using photoelectric detection means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020074514 | 2020-04-20 | ||
| JP2020-074514 | 2020-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202140865A TW202140865A (zh) | 2021-11-01 |
| TWI770661B true TWI770661B (zh) | 2022-07-11 |
Family
ID=78270418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109138395A TWI770661B (zh) | 2020-04-20 | 2020-11-04 | 單結晶製造裝置及單結晶的製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230220583A1 (https=) |
| JP (1) | JP7435752B2 (https=) |
| KR (1) | KR102696535B1 (https=) |
| CN (1) | CN115461500B (https=) |
| DE (1) | DE112021002436T5 (https=) |
| TW (1) | TWI770661B (https=) |
| WO (1) | WO2021215057A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114252018B (zh) * | 2021-12-29 | 2024-04-30 | 西安奕斯伟材料科技股份有限公司 | 晶体直径检测方法、系统及计算机程序产品 |
| JP7786289B2 (ja) * | 2022-04-08 | 2025-12-16 | 株式会社Sumco | シリコン単結晶の製造方法及び装置並びにシリコンウェーハの製造方法 |
| CN116732604A (zh) | 2022-06-01 | 2023-09-12 | 四川晶科能源有限公司 | 一种单晶拉晶方法以及单晶拉晶设备 |
| CN114990688B (zh) * | 2022-06-28 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | 单晶体直径控制方法及装置、单晶硅拉晶炉 |
| CN119442935A (zh) * | 2023-07-31 | 2025-02-14 | 内蒙古中环晶体材料有限公司 | 一种智能预测拉晶收尾方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140373774A1 (en) * | 2012-02-21 | 2014-12-25 | Shin-Etsu Handotai Co., Ltd. | Method for calculating a height position of silicon melt surface, method for pulling silicon single crystal, and silicon single crystal pulling apparatus |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5882402A (en) | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
| US6175652B1 (en) * | 1997-12-31 | 2001-01-16 | Cognex Corporation | Machine vision system for analyzing features based on multiple object images |
| JP4161547B2 (ja) * | 2001-06-28 | 2008-10-08 | 株式会社Ｓｕｍｃｏ | 単結晶引上装置および単結晶引上方法およびプログラムおよび記録媒体 |
| TW200706711A (en) * | 2005-08-12 | 2007-02-16 | Komatsu Denshi Kinzoku Kk | Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method |
| JP4918897B2 (ja) * | 2007-08-29 | 2012-04-18 | 株式会社Ｓｕｍｃｏ | シリコン単結晶引上方法 |
| JP5104129B2 (ja) * | 2007-08-31 | 2012-12-19 | 信越半導体株式会社 | 単結晶直径の検出方法および単結晶引上げ装置 |
| US8545623B2 (en) * | 2009-06-18 | 2013-10-01 | Sumco Phoenix Corporation | Method and apparatus for controlling the growth process of a monocrystalline silicon ingot |
| JP6519422B2 (ja) * | 2015-09-15 | 2019-05-29 | 株式会社Sumco | 単結晶の製造方法および装置 |
| JP6447537B2 (ja) * | 2016-02-29 | 2019-01-09 | 株式会社Sumco | 単結晶の製造方法および製造装置 |
| JP6645406B2 (ja) | 2016-12-02 | 2020-02-14 | 株式会社Sumco | 単結晶の製造方法 |
| JP6885301B2 (ja) * | 2017-11-07 | 2021-06-09 | 株式会社Sumco | 単結晶の製造方法及び装置 |
-
2020
- 2020-11-04 TW TW109138395A patent/TWI770661B/zh active
-
2021
- 2021-01-06 KR KR1020227035290A patent/KR102696535B1/ko active Active
- 2021-01-06 JP JP2022516846A patent/JP7435752B2/ja active Active
- 2021-01-06 WO PCT/JP2021/000220 patent/WO2021215057A1/ja not_active Ceased
- 2021-01-06 DE DE112021002436.1T patent/DE112021002436T5/de active Pending
- 2021-01-06 US US17/996,737 patent/US20230220583A1/en active Pending
- 2021-01-06 CN CN202180029654.5A patent/CN115461500B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140373774A1 (en) * | 2012-02-21 | 2014-12-25 | Shin-Etsu Handotai Co., Ltd. | Method for calculating a height position of silicon melt surface, method for pulling silicon single crystal, and silicon single crystal pulling apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230220583A1 (en) | 2023-07-13 |
| WO2021215057A1 (ja) | 2021-10-28 |
| CN115461500B (zh) | 2024-04-05 |
| JP7435752B2 (ja) | 2024-02-21 |
| DE112021002436T5 (de) | 2023-02-16 |
| KR20220149755A (ko) | 2022-11-08 |
| KR102696535B1 (ko) | 2024-08-19 |
| TW202140865A (zh) | 2021-11-01 |
| CN115461500A (zh) | 2022-12-09 |
| JPWO2021215057A1 (https=) | 2021-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI770661B (zh) | 單結晶製造裝置及單結晶的製造方法 | |
| JP6078974B2 (ja) | シリコン単結晶の製造方法 | |
| US9708731B2 (en) | Method of producing silicon single crystal | |
| KR101028684B1 (ko) | 실리콘 단결정 인상 방법 | |
| JP6627739B2 (ja) | 単結晶の製造方法 | |
| JP5446277B2 (ja) | シリコン単結晶の製造方法 | |
| JPH08333197A (ja) | シリコン結晶成長の制御方法及びシステム | |
| JP6645406B2 (ja) | 単結晶の製造方法 | |
| JP2002527341A (ja) | シリコン結晶成長を制御するための方法およびシステム | |
| TWI782726B (zh) | 單結晶的製造方法 | |
| TWI762268B (zh) | 單結晶製造裝置及單結晶的製造方法 | |
| TWI828140B (zh) | 單結晶的製造方法及單結晶製造裝置 | |
| JP7786289B2 (ja) | シリコン単結晶の製造方法及び装置並びにシリコンウェーハの製造方法 |