JPWO2021215057A1 - - Google Patents

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Publication number
JPWO2021215057A1
JPWO2021215057A1 JP2022516846A JP2022516846A JPWO2021215057A1 JP WO2021215057 A1 JPWO2021215057 A1 JP WO2021215057A1 JP 2022516846 A JP2022516846 A JP 2022516846A JP 2022516846 A JP2022516846 A JP 2022516846A JP WO2021215057 A1 JPWO2021215057 A1 JP WO2021215057A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022516846A
Other languages
Japanese (ja)
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JPWO2021215057A5 (https=
JP7435752B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of JPWO2021215057A1 publication Critical patent/JPWO2021215057A1/ja
Publication of JPWO2021215057A5 publication Critical patent/JPWO2021215057A5/ja
Application granted granted Critical
Publication of JP7435752B2 publication Critical patent/JP7435752B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
    • G01B11/10—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
    • G01B11/105—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving using photoelectric detection means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022516846A 2020-04-20 2021-01-06 単結晶製造装置及び単結晶の製造方法 Active JP7435752B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020074514 2020-04-20
JP2020074514 2020-04-20
PCT/JP2021/000220 WO2021215057A1 (ja) 2020-04-20 2021-01-06 単結晶製造装置及び単結晶の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021215057A1 true JPWO2021215057A1 (https=) 2021-10-28
JPWO2021215057A5 JPWO2021215057A5 (https=) 2023-01-06
JP7435752B2 JP7435752B2 (ja) 2024-02-21

Family

ID=78270418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022516846A Active JP7435752B2 (ja) 2020-04-20 2021-01-06 単結晶製造装置及び単結晶の製造方法

Country Status (7)

Country Link
US (1) US20230220583A1 (https=)
JP (1) JP7435752B2 (https=)
KR (1) KR102696535B1 (https=)
CN (1) CN115461500B (https=)
DE (1) DE112021002436T5 (https=)
TW (1) TWI770661B (https=)
WO (1) WO2021215057A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114252018B (zh) * 2021-12-29 2024-04-30 西安奕斯伟材料科技股份有限公司 晶体直径检测方法、系统及计算机程序产品
JP7786289B2 (ja) * 2022-04-08 2025-12-16 株式会社Sumco シリコン単結晶の製造方法及び装置並びにシリコンウェーハの製造方法
CN116732604A (zh) 2022-06-01 2023-09-12 四川晶科能源有限公司 一种单晶拉晶方法以及单晶拉晶设备
CN114990688B (zh) * 2022-06-28 2024-01-26 西安奕斯伟材料科技股份有限公司 单晶体直径控制方法及装置、单晶硅拉晶炉
CN119442935A (zh) * 2023-07-31 2025-02-14 内蒙古中环晶体材料有限公司 一种智能预测拉晶收尾方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003012395A (ja) * 2001-06-28 2003-01-15 Mitsubishi Materials Corp 単結晶引上装置および単結晶引上方法およびプログラムおよび記録媒体
JP2011001262A (ja) * 2009-06-18 2011-01-06 Sumco Phoenix Corp 単結晶シリコンインゴットの成長プロセスを制御する方法及び装置
JP2017154901A (ja) * 2016-02-29 2017-09-07 株式会社Sumco 単結晶の製造方法および製造装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882402A (en) 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images
TW200706711A (en) * 2005-08-12 2007-02-16 Komatsu Denshi Kinzoku Kk Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method
JP4918897B2 (ja) * 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ シリコン単結晶引上方法
JP5104129B2 (ja) * 2007-08-31 2012-12-19 信越半導体株式会社 単結晶直径の検出方法および単結晶引上げ装置
JP5664573B2 (ja) * 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
JP6519422B2 (ja) * 2015-09-15 2019-05-29 株式会社Sumco 単結晶の製造方法および装置
JP6645406B2 (ja) 2016-12-02 2020-02-14 株式会社Sumco 単結晶の製造方法
JP6885301B2 (ja) * 2017-11-07 2021-06-09 株式会社Sumco 単結晶の製造方法及び装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003012395A (ja) * 2001-06-28 2003-01-15 Mitsubishi Materials Corp 単結晶引上装置および単結晶引上方法およびプログラムおよび記録媒体
JP2011001262A (ja) * 2009-06-18 2011-01-06 Sumco Phoenix Corp 単結晶シリコンインゴットの成長プロセスを制御する方法及び装置
JP2017154901A (ja) * 2016-02-29 2017-09-07 株式会社Sumco 単結晶の製造方法および製造装置

Also Published As

Publication number Publication date
US20230220583A1 (en) 2023-07-13
WO2021215057A1 (ja) 2021-10-28
CN115461500B (zh) 2024-04-05
JP7435752B2 (ja) 2024-02-21
DE112021002436T5 (de) 2023-02-16
TWI770661B (zh) 2022-07-11
KR20220149755A (ko) 2022-11-08
KR102696535B1 (ko) 2024-08-19
TW202140865A (zh) 2021-11-01
CN115461500A (zh) 2022-12-09

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