JPWO2021215057A5 - - Google Patents

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JPWO2021215057A5
JPWO2021215057A5 JP2022516846A JP2022516846A JPWO2021215057A5 JP WO2021215057 A5 JPWO2021215057 A5 JP WO2021215057A5 JP 2022516846 A JP2022516846 A JP 2022516846A JP 2022516846 A JP2022516846 A JP 2022516846A JP WO2021215057 A5 JPWO2021215057 A5 JP WO2021215057A5
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mirror image
reference plane
central coordinates
heat shield
shield member
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JP2022516846A
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JP7435752B2 (ja
JPWO2021215057A1 (https=
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JP2022516846A 2020-04-20 2021-01-06 単結晶製造装置及び単結晶の製造方法 Active JP7435752B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020074514 2020-04-20
JP2020074514 2020-04-20
PCT/JP2021/000220 WO2021215057A1 (ja) 2020-04-20 2021-01-06 単結晶製造装置及び単結晶の製造方法

Publications (3)

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JPWO2021215057A1 JPWO2021215057A1 (https=) 2021-10-28
JPWO2021215057A5 true JPWO2021215057A5 (https=) 2023-01-06
JP7435752B2 JP7435752B2 (ja) 2024-02-21

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US (1) US20230220583A1 (https=)
JP (1) JP7435752B2 (https=)
KR (1) KR102696535B1 (https=)
CN (1) CN115461500B (https=)
DE (1) DE112021002436T5 (https=)
TW (1) TWI770661B (https=)
WO (1) WO2021215057A1 (https=)

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Publication number Priority date Publication date Assignee Title
CN114252018B (zh) * 2021-12-29 2024-04-30 西安奕斯伟材料科技股份有限公司 晶体直径检测方法、系统及计算机程序产品
JP7786289B2 (ja) * 2022-04-08 2025-12-16 株式会社Sumco シリコン単結晶の製造方法及び装置並びにシリコンウェーハの製造方法
CN116732604A (zh) 2022-06-01 2023-09-12 四川晶科能源有限公司 一种单晶拉晶方法以及单晶拉晶设备
CN114990688B (zh) * 2022-06-28 2024-01-26 西安奕斯伟材料科技股份有限公司 单晶体直径控制方法及装置、单晶硅拉晶炉
CN119442935A (zh) * 2023-07-31 2025-02-14 内蒙古中环晶体材料有限公司 一种智能预测拉晶收尾方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882402A (en) 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images
JP4161547B2 (ja) * 2001-06-28 2008-10-08 株式会社Sumco 単結晶引上装置および単結晶引上方法およびプログラムおよび記録媒体
TW200706711A (en) * 2005-08-12 2007-02-16 Komatsu Denshi Kinzoku Kk Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method
JP4918897B2 (ja) * 2007-08-29 2012-04-18 株式会社Sumco シリコン単結晶引上方法
JP5104129B2 (ja) * 2007-08-31 2012-12-19 信越半導体株式会社 単結晶直径の検出方法および単結晶引上げ装置
US8545623B2 (en) * 2009-06-18 2013-10-01 Sumco Phoenix Corporation Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
JP5664573B2 (ja) * 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
JP6519422B2 (ja) * 2015-09-15 2019-05-29 株式会社Sumco 単結晶の製造方法および装置
JP6447537B2 (ja) * 2016-02-29 2019-01-09 株式会社Sumco 単結晶の製造方法および製造装置
JP6645406B2 (ja) 2016-12-02 2020-02-14 株式会社Sumco 単結晶の製造方法
JP6885301B2 (ja) * 2017-11-07 2021-06-09 株式会社Sumco 単結晶の製造方法及び装置

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