CN115461500B - 单晶制造装置及单晶的制造方法 - Google Patents

单晶制造装置及单晶的制造方法 Download PDF

Info

Publication number
CN115461500B
CN115461500B CN202180029654.5A CN202180029654A CN115461500B CN 115461500 B CN115461500 B CN 115461500B CN 202180029654 A CN202180029654 A CN 202180029654A CN 115461500 B CN115461500 B CN 115461500B
Authority
CN
China
Prior art keywords
single crystal
diameter
fusion ring
camera
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180029654.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN115461500A (zh
Inventor
西冈研一
高梨启一
滨田建
下崎一平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN115461500A publication Critical patent/CN115461500A/zh
Application granted granted Critical
Publication of CN115461500B publication Critical patent/CN115461500B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
    • G01B11/10—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
    • G01B11/105—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving using photoelectric detection means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202180029654.5A 2020-04-20 2021-01-06 单晶制造装置及单晶的制造方法 Active CN115461500B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020074514 2020-04-20
JP2020-074514 2020-04-20
PCT/JP2021/000220 WO2021215057A1 (ja) 2020-04-20 2021-01-06 単結晶製造装置及び単結晶の製造方法

Publications (2)

Publication Number Publication Date
CN115461500A CN115461500A (zh) 2022-12-09
CN115461500B true CN115461500B (zh) 2024-04-05

Family

ID=78270418

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180029654.5A Active CN115461500B (zh) 2020-04-20 2021-01-06 单晶制造装置及单晶的制造方法

Country Status (7)

Country Link
US (1) US20230220583A1 (https=)
JP (1) JP7435752B2 (https=)
KR (1) KR102696535B1 (https=)
CN (1) CN115461500B (https=)
DE (1) DE112021002436T5 (https=)
TW (1) TWI770661B (https=)
WO (1) WO2021215057A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114252018B (zh) * 2021-12-29 2024-04-30 西安奕斯伟材料科技股份有限公司 晶体直径检测方法、系统及计算机程序产品
JP7786289B2 (ja) * 2022-04-08 2025-12-16 株式会社Sumco シリコン単結晶の製造方法及び装置並びにシリコンウェーハの製造方法
CN116732604A (zh) 2022-06-01 2023-09-12 四川晶科能源有限公司 一种单晶拉晶方法以及单晶拉晶设备
CN114990688B (zh) * 2022-06-28 2024-01-26 西安奕斯伟材料科技股份有限公司 单晶体直径控制方法及装置、单晶硅拉晶炉
CN119442935A (zh) * 2023-07-31 2025-02-14 内蒙古中环晶体材料有限公司 一种智能预测拉晶收尾方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003012395A (ja) * 2001-06-28 2003-01-15 Mitsubishi Materials Corp 単結晶引上装置および単結晶引上方法およびプログラムおよび記録媒体
CN101377008A (zh) * 2007-08-29 2009-03-04 胜高股份有限公司 硅单晶提拉方法
JP2017154901A (ja) * 2016-02-29 2017-09-07 株式会社Sumco 単結晶の製造方法および製造装置
CN107923065A (zh) * 2015-09-15 2018-04-17 胜高股份有限公司 单晶的制造方法及装置
CN109750352A (zh) * 2017-11-07 2019-05-14 胜高股份有限公司 单晶的制造方法及装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882402A (en) 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images
TW200706711A (en) * 2005-08-12 2007-02-16 Komatsu Denshi Kinzoku Kk Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method
JP5104129B2 (ja) * 2007-08-31 2012-12-19 信越半導体株式会社 単結晶直径の検出方法および単結晶引上げ装置
US8545623B2 (en) * 2009-06-18 2013-10-01 Sumco Phoenix Corporation Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
JP5664573B2 (ja) * 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
JP6645406B2 (ja) 2016-12-02 2020-02-14 株式会社Sumco 単結晶の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003012395A (ja) * 2001-06-28 2003-01-15 Mitsubishi Materials Corp 単結晶引上装置および単結晶引上方法およびプログラムおよび記録媒体
CN101377008A (zh) * 2007-08-29 2009-03-04 胜高股份有限公司 硅单晶提拉方法
CN107923065A (zh) * 2015-09-15 2018-04-17 胜高股份有限公司 单晶的制造方法及装置
JP2017154901A (ja) * 2016-02-29 2017-09-07 株式会社Sumco 単結晶の製造方法および製造装置
CN109750352A (zh) * 2017-11-07 2019-05-14 胜高股份有限公司 单晶的制造方法及装置

Also Published As

Publication number Publication date
US20230220583A1 (en) 2023-07-13
WO2021215057A1 (ja) 2021-10-28
JP7435752B2 (ja) 2024-02-21
DE112021002436T5 (de) 2023-02-16
TWI770661B (zh) 2022-07-11
KR20220149755A (ko) 2022-11-08
KR102696535B1 (ko) 2024-08-19
TW202140865A (zh) 2021-11-01
CN115461500A (zh) 2022-12-09
JPWO2021215057A1 (https=) 2021-10-28

Similar Documents

Publication Publication Date Title
CN115461500B (zh) 单晶制造装置及单晶的制造方法
JP5678635B2 (ja) シリコン単結晶の製造装置、シリコン単結晶の製造方法
JP6078974B2 (ja) シリコン単結晶の製造方法
JP6627739B2 (ja) 単結晶の製造方法
JP6645406B2 (ja) 単結晶の製造方法
JPH08333197A (ja) シリコン結晶成長の制御方法及びシステム
CN109750352B (zh) 单晶的制造方法及装置
KR102816158B1 (ko) 단결정의 제조 방법
KR102533979B1 (ko) 단결정 제조 장치 및 단결정의 제조 방법
TWI828140B (zh) 單結晶的製造方法及單結晶製造裝置
JP7786289B2 (ja) シリコン単結晶の製造方法及び装置並びにシリコンウェーハの製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant