TWI769929B - 半導體元件及使用其之電氣機器 - Google Patents

半導體元件及使用其之電氣機器 Download PDF

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Publication number
TWI769929B
TWI769929B TW110135936A TW110135936A TWI769929B TW I769929 B TWI769929 B TW I769929B TW 110135936 A TW110135936 A TW 110135936A TW 110135936 A TW110135936 A TW 110135936A TW I769929 B TWI769929 B TW I769929B
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TW
Taiwan
Prior art keywords
layer
semiconductor
semiconductor layer
electrode
schottky
Prior art date
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TW110135936A
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English (en)
Chinese (zh)
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TW202205671A (zh
Inventor
霍間勇輝
関谷隆司
笘井重和
川嶋絵美
上岡義弘
Original Assignee
日本商出光興產股份有限公司
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Priority claimed from JP2016159351A external-priority patent/JP6975530B2/ja
Application filed by 日本商出光興產股份有限公司 filed Critical 日本商出光興產股份有限公司
Publication of TW202205671A publication Critical patent/TW202205671A/zh
Application granted granted Critical
Publication of TWI769929B publication Critical patent/TWI769929B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H01L29/247—Amorphous materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Capacitors (AREA)
TW110135936A 2015-12-25 2016-12-23 半導體元件及使用其之電氣機器 TWI769929B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP??2015-254761 2015-12-25
JP2015254761 2015-12-25
JP2016159351A JP6975530B2 (ja) 2015-12-25 2016-08-15 半導体素子及びそれを用いた電気機器
JP??2016-159351 2016-08-15

Publications (2)

Publication Number Publication Date
TW202205671A TW202205671A (zh) 2022-02-01
TWI769929B true TWI769929B (zh) 2022-07-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW110135936A TWI769929B (zh) 2015-12-25 2016-12-23 半導體元件及使用其之電氣機器
TW105142985A TWI751999B (zh) 2015-12-25 2016-12-23 半導體元件及使用其之電氣機器

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105142985A TWI751999B (zh) 2015-12-25 2016-12-23 半導體元件及使用其之電氣機器

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TW (2) TWI769929B (ja)
WO (1) WO2017110940A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6991503B2 (ja) 2017-07-06 2022-01-12 株式会社タムラ製作所 ショットキーバリアダイオード
CN113169055B (zh) * 2018-12-05 2023-08-08 三菱电机株式会社 半导体装置及半导体装置的制造方法
JP7078581B2 (ja) * 2019-08-29 2022-05-31 信越化学工業株式会社 積層構造体及び半導体装置並びに積層構造体の製造方法
JP7078582B2 (ja) * 2019-08-29 2022-05-31 信越化学工業株式会社 積層構造体、半導体装置及び結晶性酸化膜の成膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165532A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物を利用した半導体デバイス
WO2015025500A1 (ja) * 2013-08-19 2015-02-26 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8207559B2 (en) * 2008-07-14 2012-06-26 Texas Instruments Incorporated Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures
JP2013058741A (ja) * 2011-08-17 2013-03-28 Hitachi Cable Ltd 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート
CN105453272B (zh) * 2013-08-19 2020-08-21 出光兴产株式会社 氧化物半导体基板及肖特基势垒二极管元件
US9543290B2 (en) * 2014-01-23 2017-01-10 International Business Machines Corporation Normally-off junction field-effect transistors and application to complementary circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165532A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物を利用した半導体デバイス
WO2015025500A1 (ja) * 2013-08-19 2015-02-26 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード

Also Published As

Publication number Publication date
WO2017110940A1 (ja) 2017-06-29
TW202205671A (zh) 2022-02-01
TW201735358A (zh) 2017-10-01
TWI751999B (zh) 2022-01-11

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