TWI769284B - 氣體散佈裝置、基板處理設備及基板處理方法 - Google Patents

氣體散佈裝置、基板處理設備及基板處理方法 Download PDF

Info

Publication number
TWI769284B
TWI769284B TW107126006A TW107126006A TWI769284B TW I769284 B TWI769284 B TW I769284B TW 107126006 A TW107126006 A TW 107126006A TW 107126006 A TW107126006 A TW 107126006A TW I769284 B TWI769284 B TW I769284B
Authority
TW
Taiwan
Prior art keywords
gas
space
dispersing
module
gas distribution
Prior art date
Application number
TW107126006A
Other languages
English (en)
Chinese (zh)
Other versions
TW201911381A (zh
Inventor
千珉鎬
金鍾植
黃喆周
Original Assignee
南韓商周星工程股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商周星工程股份有限公司 filed Critical 南韓商周星工程股份有限公司
Publication of TW201911381A publication Critical patent/TW201911381A/zh
Application granted granted Critical
Publication of TWI769284B publication Critical patent/TWI769284B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
TW107126006A 2017-07-28 2018-07-27 氣體散佈裝置、基板處理設備及基板處理方法 TWI769284B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
KR20170096375 2017-07-28
KR10-2017-0096375 2017-07-28
??10-2017-0096375 2017-07-28
KR10-2017-0102535 2017-08-11
KR20170102535 2017-08-11
??10-2017-0102535 2017-08-11
??10-2018-0082066 2018-07-16
KR10-2018-0082066 2018-07-16
KR1020180082066A KR102155281B1 (ko) 2017-07-28 2018-07-16 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법

Publications (2)

Publication Number Publication Date
TW201911381A TW201911381A (zh) 2019-03-16
TWI769284B true TWI769284B (zh) 2022-07-01

Family

ID=65370631

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107126006A TWI769284B (zh) 2017-07-28 2018-07-27 氣體散佈裝置、基板處理設備及基板處理方法

Country Status (5)

Country Link
US (1) US11651941B2 (enExample)
JP (1) JP7145928B2 (enExample)
KR (1) KR102155281B1 (enExample)
CN (1) CN110914970B (enExample)
TW (1) TWI769284B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102760892B1 (ko) * 2021-01-29 2025-02-03 주성엔지니어링(주) 기판처리장치
JP7758447B2 (ja) * 2022-02-10 2025-10-22 東京エレクトロン株式会社 成膜装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030002776A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 박막 증착 장비
KR20120081772A (ko) * 2011-01-12 2012-07-20 주성엔지니어링(주) 가스 공급 장치, 가스 공급 방법 및 이를 구비하는 기판 처리 장치
TW201541540A (zh) * 2014-03-11 2015-11-01 Kookje Electric Korea Co Ltd 基板處理設備
TW201707057A (zh) * 2015-04-28 2017-02-16 周星工程股份有限公司 基板處理裝置及方法
TW201718929A (zh) * 2015-07-27 2017-06-01 蘭姆研究公司 時間多工化化學傳輸系統

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
US6656282B2 (en) * 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
JP3574651B2 (ja) 2002-12-05 2004-10-06 東京エレクトロン株式会社 成膜方法および成膜装置
JP4935687B2 (ja) * 2008-01-19 2012-05-23 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
JP5544697B2 (ja) * 2008-09-30 2014-07-09 東京エレクトロン株式会社 成膜装置
JP2011074413A (ja) * 2009-09-29 2011-04-14 Tokyo Electron Ltd 成膜装置および成膜方法、ならびに基板処理装置
KR101665581B1 (ko) 2010-06-22 2016-10-12 주식회사 원익아이피에스 박막증착방법
KR101741688B1 (ko) * 2011-12-26 2017-06-16 주식회사 원익아이피에스 박막 제조방법 및 그 제조장치
KR20130090287A (ko) * 2012-02-03 2013-08-13 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR101804125B1 (ko) 2012-04-20 2017-12-05 주식회사 원익아이피에스 기판처리장치
CN108277478B (zh) * 2012-05-29 2020-03-20 周星工程股份有限公司 基板加工装置及基板加工方法
KR102014877B1 (ko) * 2012-05-30 2019-08-27 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR102070400B1 (ko) * 2012-06-29 2020-01-28 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
WO2014003434A1 (ko) * 2012-06-29 2014-01-03 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR101397162B1 (ko) * 2012-08-23 2014-05-19 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP6258657B2 (ja) * 2013-10-18 2018-01-10 東京エレクトロン株式会社 成膜方法および成膜装置
KR101849861B1 (ko) * 2014-03-28 2018-05-31 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
JP6479560B2 (ja) * 2015-05-01 2019-03-06 東京エレクトロン株式会社 成膜装置
JP6968701B2 (ja) * 2015-05-02 2021-11-17 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 低誘電率かつ低湿式エッチング速度の誘電体薄膜を堆積させるための方法
KR20170022459A (ko) * 2015-08-20 2017-03-02 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR101802384B1 (ko) * 2016-03-03 2017-11-28 임경철 증착 장치 및 방법
KR101887191B1 (ko) * 2016-10-25 2018-08-10 주식회사 엔씨디 롤투롤 원자층 증착장치
KR102737307B1 (ko) * 2018-12-26 2024-12-03 주성엔지니어링(주) 기판처리장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030002776A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 박막 증착 장비
KR20120081772A (ko) * 2011-01-12 2012-07-20 주성엔지니어링(주) 가스 공급 장치, 가스 공급 방법 및 이를 구비하는 기판 처리 장치
TW201541540A (zh) * 2014-03-11 2015-11-01 Kookje Electric Korea Co Ltd 基板處理設備
TW201707057A (zh) * 2015-04-28 2017-02-16 周星工程股份有限公司 基板處理裝置及方法
TW201718929A (zh) * 2015-07-27 2017-06-01 蘭姆研究公司 時間多工化化學傳輸系統

Also Published As

Publication number Publication date
US20200219700A1 (en) 2020-07-09
JP7145928B2 (ja) 2022-10-03
CN110914970B (zh) 2023-10-10
US11651941B2 (en) 2023-05-16
KR20190013497A (ko) 2019-02-11
TW201911381A (zh) 2019-03-16
KR102155281B1 (ko) 2020-09-11
JP2020528498A (ja) 2020-09-24
CN110914970A (zh) 2020-03-24

Similar Documents

Publication Publication Date Title
CN102576662B (zh) 气体喷射装置和使用其的基底处理设备
JP2007247066A (ja) 回転サセプタを備える半導体処理装置
US20150140786A1 (en) Substrate processing device and substrate processing method
KR20100027040A (ko) 성막 장치 및 기판 처리 장치
US9387510B2 (en) Substrate processing apparatus and substrate processing method
TW201334066A (zh) 成膜裝置
CN109661714B (zh) 用于基板处理设备的气体喷涂设备及基板处理设备
TW201404929A (zh) 基板處理設備以及方法
TW201724340A (zh) 基板處理設備與基板處理方法
KR20100002886A (ko) 원자층 증착 장치
TWI769284B (zh) 氣體散佈裝置、基板處理設備及基板處理方法
TW201707057A (zh) 基板處理裝置及方法
KR101185376B1 (ko) 가스 분사 조립체 및 이를 이용한 박막증착장치
TWI831772B (zh) 基板處理裝置
TW201340176A (zh) 基板處理設備與基板處理方法
TWI770258B (zh) 基板支撐元件和基板處理裝置
TWI839431B (zh) 基板處理設備
KR101946312B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR101938267B1 (ko) 기판 처리 장치 및 이를 이용한 기판 처리 방법
JP7719735B2 (ja) 半導体製造装置
JP2025531896A (ja) ガス供給装置およびそれを含む基板処理装置
KR101668867B1 (ko) 원자층 증착장치
JP2022533967A (ja) 基板処理装置
JP2022186347A (ja) 基板処理装置及び基板処理方法
KR20190006050A (ko) 기판 처리 장치 및 이를 이용한 기판 처리 방법