TWI765565B - 帶金屬膜的物體 - Google Patents
帶金屬膜的物體 Download PDFInfo
- Publication number
- TWI765565B TWI765565B TW110104536A TW110104536A TWI765565B TW I765565 B TWI765565 B TW I765565B TW 110104536 A TW110104536 A TW 110104536A TW 110104536 A TW110104536 A TW 110104536A TW I765565 B TWI765565 B TW I765565B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- film
- processed
- processing chamber
- metal film
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 149
- 239000002184 metal Substances 0.000 title claims abstract description 149
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000011521 glass Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 252
- 238000012545 processing Methods 0.000 description 148
- 230000015572 biosynthetic process Effects 0.000 description 86
- 238000010438 heat treatment Methods 0.000 description 59
- 230000007246 mechanism Effects 0.000 description 56
- 238000004544 sputter deposition Methods 0.000 description 44
- 238000000034 method Methods 0.000 description 41
- 230000006837 decompression Effects 0.000 description 33
- 238000009832 plasma treatment Methods 0.000 description 27
- 238000007747 plating Methods 0.000 description 23
- 239000007789 gas Substances 0.000 description 20
- 239000011261 inert gas Substances 0.000 description 20
- 239000012495 reaction gas Substances 0.000 description 18
- 229910044991 metal oxide Inorganic materials 0.000 description 17
- 150000004706 metal oxides Chemical class 0.000 description 17
- 239000013078 crystal Substances 0.000 description 13
- 238000005192 partition Methods 0.000 description 13
- 238000000137 annealing Methods 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000013077 target material Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 238000012546 transfer Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| WOPCT/JP2020/008286 | 2020-02-28 | ||
| PCT/JP2020/008286 WO2021171551A1 (ja) | 2020-02-28 | 2020-02-28 | 金属膜付物体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202146230A TW202146230A (zh) | 2021-12-16 |
| TWI765565B true TWI765565B (zh) | 2022-05-21 |
Family
ID=77491147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110104536A TWI765565B (zh) | 2020-02-28 | 2021-02-05 | 帶金屬膜的物體 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2021171551A1 (https=) |
| CN (1) | CN114929926A (https=) |
| TW (1) | TWI765565B (https=) |
| WO (1) | WO2021171551A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09123343A (ja) * | 1995-11-02 | 1997-05-13 | Mitsui Toatsu Chem Inc | 積層体 |
| TW201706459A (zh) * | 2015-06-24 | 2017-02-16 | Jx Nippon Mining & Metals Corp | 附載體之銅箔、積層體、印刷配線板、電子機器及印刷配線板之製造方法 |
| TW201722233A (zh) * | 2015-09-24 | 2017-06-16 | Mitsuboshi Belting Ltd | 通孔填充基板與其製造方法及前驅體 |
| TW201820414A (zh) * | 2016-08-31 | 2018-06-01 | 日商大日本印刷股份有限公司 | 貫通電極基板、貫通電極基板之製造方法及安裝基板 |
| TW202003882A (zh) * | 2018-06-01 | 2020-01-16 | 日商島津製作所股份有限公司 | 導電膜形成方法、以及配線基板的製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037257A (en) * | 1997-05-08 | 2000-03-14 | Applied Materials, Inc. | Sputter deposition and annealing of copper alloy metallization |
| US7060364B2 (en) * | 2002-12-26 | 2006-06-13 | Mitsui Mining & Smelting Co., Ltd. | Film carrier tape for mounting electronic devices thereon |
-
2020
- 2020-02-28 CN CN202080092190.8A patent/CN114929926A/zh active Pending
- 2020-02-28 JP JP2022502772A patent/JPWO2021171551A1/ja active Pending
- 2020-02-28 WO PCT/JP2020/008286 patent/WO2021171551A1/ja not_active Ceased
-
2021
- 2021-02-05 TW TW110104536A patent/TWI765565B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09123343A (ja) * | 1995-11-02 | 1997-05-13 | Mitsui Toatsu Chem Inc | 積層体 |
| TW201706459A (zh) * | 2015-06-24 | 2017-02-16 | Jx Nippon Mining & Metals Corp | 附載體之銅箔、積層體、印刷配線板、電子機器及印刷配線板之製造方法 |
| TW201722233A (zh) * | 2015-09-24 | 2017-06-16 | Mitsuboshi Belting Ltd | 通孔填充基板與其製造方法及前驅體 |
| TW201820414A (zh) * | 2016-08-31 | 2018-06-01 | 日商大日本印刷股份有限公司 | 貫通電極基板、貫通電極基板之製造方法及安裝基板 |
| TW202003882A (zh) * | 2018-06-01 | 2020-01-16 | 日商島津製作所股份有限公司 | 導電膜形成方法、以及配線基板的製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114929926A (zh) | 2022-08-19 |
| WO2021171551A1 (ja) | 2021-09-02 |
| TW202146230A (zh) | 2021-12-16 |
| JPWO2021171551A1 (https=) | 2021-09-02 |
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