TWI761997B - 薄片之製作方法、解析系統及試料之解析方法 - Google Patents

薄片之製作方法、解析系統及試料之解析方法 Download PDF

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Publication number
TWI761997B
TWI761997B TW109136231A TW109136231A TWI761997B TW I761997 B TWI761997 B TW I761997B TW 109136231 A TW109136231 A TW 109136231A TW 109136231 A TW109136231 A TW 109136231A TW I761997 B TWI761997 B TW I761997B
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Taiwan
Prior art keywords
sheet
analysis
width
wafer
sample
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TW109136231A
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English (en)
Chinese (zh)
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TW202121473A (zh
Inventor
澤田淳
野間口恒典
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日商日立全球先端科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2202—Preparing specimens therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2204—Specimen supports therefor; Sample conveying means therefore
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2873—Cutting or cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/201—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated for mounting multiple objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/208—Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
TW109136231A 2019-11-20 2020-10-20 薄片之製作方法、解析系統及試料之解析方法 TWI761997B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2019/045433 2019-11-20
PCT/JP2019/045433 WO2021100144A1 (ja) 2019-11-20 2019-11-20 ラメラの作製方法、解析システムおよび試料の解析方法

Publications (2)

Publication Number Publication Date
TW202121473A TW202121473A (zh) 2021-06-01
TWI761997B true TWI761997B (zh) 2022-04-21

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ID=75980416

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109136231A TWI761997B (zh) 2019-11-20 2020-10-20 薄片之製作方法、解析系統及試料之解析方法

Country Status (5)

Country Link
US (1) US12176180B2 (https=)
JP (1) JP7389817B2 (https=)
KR (1) KR102942497B1 (https=)
TW (1) TWI761997B (https=)
WO (1) WO2021100144A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230096171A (ko) 2021-12-22 2023-06-30 삼성전자주식회사 반도체 소자 검사 장치 및 이를 이용한 반도체 소자 검사 방법
JPWO2024134744A1 (https=) * 2022-12-20 2024-06-27

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727911B1 (en) * 1999-04-28 2004-04-27 Jeol Ltd. Method and apparatus for observing specimen image on scanning charged-particle beam instrument
JP2004264145A (ja) * 2003-02-28 2004-09-24 Toshiba Corp 透過型電子顕微鏡観察試料の作製方法
TW200723389A (en) * 2005-01-31 2007-06-16 Sumco Corp Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same
JP2017072596A (ja) * 2015-10-06 2017-04-13 フラウンホファー ゲセルシャフト ツール フェールデルンク ダー アンゲヴァンテン フォルシュンク エー．ファオ． 微細構造診断のための試料を作製する方法及び微細構造診断用の試料
TW201903870A (zh) * 2017-06-01 2019-01-16 鈦昇科技股份有限公司 晶圓切割方法

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JPH06129962A (ja) * 1992-10-16 1994-05-13 Mitsubishi Electric Corp 透過形電子顕微鏡用試料
JP2001015058A (ja) * 1999-04-28 2001-01-19 Jeol Ltd 走査型荷電粒子ビーム装置における試料像観察方法及び装置
JP2001124676A (ja) * 1999-10-25 2001-05-11 Hitachi Ltd 電子顕微鏡観察用試料支持部材
KR20030016910A (ko) 2001-08-23 2003-03-03 삼성전자주식회사 투과전자현미경 분석시료 및 그 제조 방법
KR20040031279A (ko) 2002-10-04 2004-04-13 삼성전자주식회사 투과 전자현미경 분석용 시편 제조방법
JP5039962B2 (ja) 2007-11-06 2012-10-03 エスアイアイ・ナノテクノロジー株式会社 透過電子顕微鏡用試料作製方法及び荷電粒子ビーム装置
EP2151848A1 (en) * 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
KR101109848B1 (ko) * 2010-03-30 2012-02-14 현대제철 주식회사 전자 탐침 미소 분석기용 시편 홀더 장치
US9281163B2 (en) 2014-04-14 2016-03-08 Fei Company High capacity TEM grid
US20150369710A1 (en) * 2014-06-24 2015-12-24 Fei Company Method and System of Creating a Symmetrical FIB Deposition
US10930514B2 (en) * 2018-06-11 2021-02-23 Fei Company Method and apparatus for the planarization of surfaces
US11088036B2 (en) * 2018-07-31 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Atom probe tomography specimen preparation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727911B1 (en) * 1999-04-28 2004-04-27 Jeol Ltd. Method and apparatus for observing specimen image on scanning charged-particle beam instrument
JP2004264145A (ja) * 2003-02-28 2004-09-24 Toshiba Corp 透過型電子顕微鏡観察試料の作製方法
TW200723389A (en) * 2005-01-31 2007-06-16 Sumco Corp Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same
JP2017072596A (ja) * 2015-10-06 2017-04-13 フラウンホファー ゲセルシャフト ツール フェールデルンク ダー アンゲヴァンテン フォルシュンク エー．ファオ． 微細構造診断のための試料を作製する方法及び微細構造診断用の試料
TW201903870A (zh) * 2017-06-01 2019-01-16 鈦昇科技股份有限公司 晶圓切割方法

Also Published As

Publication number Publication date
TW202121473A (zh) 2021-06-01
US20220367144A1 (en) 2022-11-17
KR102942497B1 (ko) 2026-03-24
WO2021100144A1 (ja) 2021-05-27
JPWO2021100144A1 (https=) 2021-05-27
KR20220073799A (ko) 2022-06-03
JP7389817B2 (ja) 2023-11-30
US12176180B2 (en) 2024-12-24

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