TWI760984B - 用於疊對測量之方法 - Google Patents

用於疊對測量之方法 Download PDF

Info

Publication number
TWI760984B
TWI760984B TW109145525A TW109145525A TWI760984B TW I760984 B TWI760984 B TW I760984B TW 109145525 A TW109145525 A TW 109145525A TW 109145525 A TW109145525 A TW 109145525A TW I760984 B TWI760984 B TW I760984B
Authority
TW
Taiwan
Prior art keywords
target
imaging
phase
measurement
illumination
Prior art date
Application number
TW109145525A
Other languages
English (en)
Chinese (zh)
Other versions
TW202122930A (zh
Inventor
維拉得摩 朗維司基
尤瑞 帕斯卡維爾
阿農 馬那森
尤尼 夏里波
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW202122930A publication Critical patent/TW202122930A/zh
Application granted granted Critical
Publication of TWI760984B publication Critical patent/TWI760984B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/32—Fiducial marks and measuring scales within the optical system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/653—Coherent methods [CARS]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
TW109145525A 2015-05-19 2016-05-19 用於疊對測量之方法 TWI760984B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562163783P 2015-05-19 2015-05-19
US62/163,783 2015-05-19
US201562222724P 2015-09-23 2015-09-23
US62/222,724 2015-09-23

Publications (2)

Publication Number Publication Date
TW202122930A TW202122930A (zh) 2021-06-16
TWI760984B true TWI760984B (zh) 2022-04-11

Family

ID=57320785

Family Applications (4)

Application Number Title Priority Date Filing Date
TW109145525A TWI760984B (zh) 2015-05-19 2016-05-19 用於疊對測量之方法
TW109145523A TWI752764B (zh) 2015-05-19 2016-05-19 用於疊對測量之形貌相位控制
TW109145524A TWI755987B (zh) 2015-05-19 2016-05-19 具有用於疊對測量之形貌相位控制之光學系統
TW105115575A TWI715582B (zh) 2015-05-19 2016-05-19 用於疊對測量之形貌相位控制

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW109145523A TWI752764B (zh) 2015-05-19 2016-05-19 用於疊對測量之形貌相位控制
TW109145524A TWI755987B (zh) 2015-05-19 2016-05-19 具有用於疊對測量之形貌相位控制之光學系統
TW105115575A TWI715582B (zh) 2015-05-19 2016-05-19 用於疊對測量之形貌相位控制

Country Status (7)

Country Link
US (5) US10520832B2 (enExample)
JP (4) JP6879939B2 (enExample)
KR (4) KR102678955B1 (enExample)
CN (4) CN107636538B (enExample)
SG (3) SG10201912822UA (enExample)
TW (4) TWI760984B (enExample)
WO (1) WO2016187468A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102678955B1 (ko) 2015-05-19 2024-06-26 케이엘에이 코포레이션 오버레이 측정을 위한 지형 위상 제어
US9989806B2 (en) * 2015-09-10 2018-06-05 Samsung Display Co., Ltd. Color conversion panel and display device including the same
CN108369087B (zh) * 2015-12-08 2021-04-30 科磊股份有限公司 使用偏振目标及偏振照明以控制衍射级的振幅及相位
WO2018147938A1 (en) * 2017-02-10 2018-08-16 Kla-Tencor Corporation Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
US10754261B2 (en) * 2017-06-06 2020-08-25 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
EP3454123A1 (en) * 2017-09-06 2019-03-13 ASML Netherlands B.V. Metrology method and apparatus
WO2019091678A1 (en) * 2017-11-07 2019-05-16 Asml Netherlands B.V. Metrology apparatus and a method of determining a characteristic of interest
EP3499312A1 (en) * 2017-12-15 2019-06-19 ASML Netherlands B.V. Metrology apparatus and a method of determining a characteristic of interest
US11085754B2 (en) 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
EP3521929A1 (en) * 2018-02-02 2019-08-07 ASML Netherlands B.V. Method of determining an optimal focus height for a metrology apparatus
KR102544707B1 (ko) 2018-02-27 2023-06-16 에이에스엠엘 네델란즈 비.브이. 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 장치 및 방법
US11158548B2 (en) * 2018-03-19 2021-10-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
US10622238B2 (en) * 2018-06-07 2020-04-14 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
WO2020046408A1 (en) 2018-08-28 2020-03-05 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
US12130246B2 (en) * 2018-12-31 2024-10-29 Asml Netherlands B.V. Method for overlay metrology and apparatus thereof
JP7595599B2 (ja) 2019-02-14 2024-12-06 ケーエルエー コーポレイション トポグラフィ半導体デバイスウェハの製造における位置ずれの測定方法
KR102509764B1 (ko) * 2019-03-21 2023-03-14 케이엘에이 코포레이션 반도체 디바이스에서의 파라미터-안정적 오정렬 측정 개선
US11703460B2 (en) * 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
US11914290B2 (en) 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
KR102825815B1 (ko) * 2020-06-18 2025-06-27 삼성전자주식회사 스루-포커스 이미지 기반 계측 장치, 그것의 동작 방법, 및 그 동작을 실행하는 컴퓨팅 장치
CN112465694B (zh) * 2020-11-27 2024-10-15 中国科学院西安光学精密机械研究所 基于相位变化的医学图像数据增广方法
US11378394B1 (en) * 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
US11713959B2 (en) * 2021-03-17 2023-08-01 Kla Corporation Overlay metrology using spectroscopic phase
KR20240018489A (ko) * 2021-06-09 2024-02-13 에이에스엠엘 네델란즈 비.브이. 애퍼처 아포디제이션을 갖는 구조적 조명을 이용한 레티클 입자 검출을 위한 검사 시스템
CN113467033A (zh) * 2021-06-24 2021-10-01 南昌欧菲光电技术有限公司 一种摄像头模组及其透镜的定位方法
CN113777731A (zh) * 2021-08-11 2021-12-10 中国工程物理研究院应用电子学研究所 一种共轴反转环型连续变密度衰减器装置及其工作方法
CN113985711B (zh) * 2021-10-28 2024-02-02 无锡卓海科技股份有限公司 一种套刻测量装置
KR102874693B1 (ko) * 2023-08-17 2025-10-29 (주) 오로스테크놀로지 이미지 기반 오버레이 시스템에서 위상 이미지 획득 장치 및 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070134563A1 (en) * 2005-11-18 2007-06-14 Kazuya Fukuhara Photomask and method of manufacturing semiconductor device
US20070279630A1 (en) * 2006-06-01 2007-12-06 Kla-Tencor Technologies Corporation Order selected overlay metrology
US20080266561A1 (en) * 2007-04-26 2008-10-30 Kla-Tencor Corporation Optical gain approach for enhancement of overlay and alignment systems performance
US20090219515A1 (en) * 2005-09-22 2009-09-03 Hartmut Spennemann Interferometic Measuring Device
US20140111791A1 (en) * 2012-10-19 2014-04-24 Kla-Tencor Corporation Phase characterization of targets
TW201447622A (zh) * 2013-04-19 2014-12-16 克萊譚克公司 裝置上之量測

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644172A (en) * 1984-02-22 1987-02-17 Kla Instruments Corporation Electronic control of an automatic wafer inspection system
US5666197A (en) * 1996-08-21 1997-09-09 Polaroid Corporation Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography
JPH10284370A (ja) * 1997-04-03 1998-10-23 Nikon Corp 焦点位置検出装置及び該装置を備えた投影露光装置
JP2001307975A (ja) * 2000-02-18 2001-11-02 Nikon Corp 荷電粒子線露光装置及び半導体デバイスの製造方法
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP2002170760A (ja) * 2000-12-01 2002-06-14 Nikon Corp 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法
US7072502B2 (en) * 2001-06-07 2006-07-04 Applied Materials, Inc. Alternating phase-shift mask inspection method and apparatus
US6794671B2 (en) * 2002-07-17 2004-09-21 Particle Sizing Systems, Inc. Sensors and methods for high-sensitivity optical particle counting and sizing
AU2003298003A1 (en) * 2002-12-05 2004-06-30 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7230704B2 (en) * 2003-06-06 2007-06-12 Tokyo Electron Limited Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
JP4734261B2 (ja) 2004-02-18 2011-07-27 ケーエルエー−テンカー コーポレイション 連続変化するオフセットマークと、オーバレイ決定方法
DE102005006724A1 (de) * 2004-10-20 2006-08-10 Universität Stuttgart Verfahren und Anordung zur konfokalen Spektral-Interferometrie, insbesondere auch zur optischen Kohärenz-Tomografie (OCT)und/oder optischen Kohärenz-Mikroskopie (OCM)von biologischen und technischen Objekten
US20060164649A1 (en) 2005-01-24 2006-07-27 Eliezer Rosengaus Multi-spectral techniques for defocus detection
US20070238955A1 (en) * 2006-01-18 2007-10-11 The General Hospital Corporation Systems and methods for generating data using one or more endoscopic microscopy techniques
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
DE102006021557B3 (de) * 2006-05-08 2007-07-12 Carl Mahr Holding Gmbh Vorrichtung und Verfahren zur kombinierten interferometrischen und abbildungsbasierten Geometrieerfassung, insbesondere in der Mikrosystemtechnik
KR20100014357A (ko) * 2007-04-12 2010-02-10 가부시키가이샤 니콘 계측 방법, 노광 방법 및 디바이스 제조 방법
JP4966724B2 (ja) * 2007-04-20 2012-07-04 キヤノン株式会社 露光装置及びデバイス製造方法
US7869022B2 (en) * 2007-07-18 2011-01-11 Asml Netherlands B.V. Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system
US20090034071A1 (en) * 2007-07-31 2009-02-05 Dean Jennings Method for partitioning and incoherently summing a coherent beam
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US9239455B2 (en) * 2007-12-31 2016-01-19 Stc.Unm Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP5319978B2 (ja) * 2008-07-28 2013-10-16 株式会社日立メディアエレクトロニクス 光ピックアップ装置、光ディスク装置および回折格子
TWI427431B (zh) * 2008-09-22 2014-02-21 Ａｓｍｌ荷蘭公司 微影裝置、可程式化圖案化器件及微影方法
JP5361322B2 (ja) * 2008-10-14 2013-12-04 キヤノン株式会社 露光装置及びデバイスの製造方法
DE102009044151B4 (de) * 2009-05-19 2012-03-29 Kla-Tencor Mie Gmbh Vorrichtung zur optischen Waferinspektion
WO2011012624A1 (en) * 2009-07-31 2011-02-03 Asml Netherlands B.V. Metrology method and apparatus, lithographic system, and lithographic processing cell
CN101699265A (zh) * 2009-10-28 2010-04-28 上海理工大学 动态偏振光散射颗粒测量装置及测量方法
US8896832B2 (en) * 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
WO2012010458A1 (en) 2010-07-19 2012-01-26 Asml Netherlands B.V. Method and apparatus for determining an overlay error
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
KR102068950B1 (ko) * 2011-02-10 2020-01-21 케이엘에이 코포레이션 오버레이 계측의 콘트라스트 증강을 위한 구조화 조명
US20120224183A1 (en) * 2011-03-02 2012-09-06 Zygo Corporation Interferometric metrology of surfaces, films and underresolved structures
WO2012136434A2 (en) * 2011-04-08 2012-10-11 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
US8582114B2 (en) 2011-08-15 2013-11-12 Kla-Tencor Corporation Overlay metrology by pupil phase analysis
EP2841875A4 (en) * 2012-04-23 2016-01-20 Univ Ben Gurion HIGH-RESOLUTION OPTICAL FULL-FIELD COHERENCE TOMOGRAPHY WITH GENUINE SPECTROSCOPIC DOUBLE MODE USING LIQUID CRYSTAL DEVICES
KR102330743B1 (ko) * 2012-06-26 2021-11-23 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US8913237B2 (en) 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
US9329033B2 (en) 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
CN103411557B (zh) * 2013-08-15 2016-02-03 哈尔滨工业大学 阵列照明的角谱扫描准共焦环形微结构测量装置与方法
KR102221751B1 (ko) * 2014-02-03 2021-03-03 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법
KR101906293B1 (ko) * 2014-02-21 2018-10-10 에이에스엠엘 네델란즈 비.브이. 타겟 배열 및 연계된 타겟의 최적화
KR102414277B1 (ko) * 2014-04-07 2022-06-29 노바 엘티디. 광학 위상 측정 방법 및 시스템
US20150355098A1 (en) * 2014-05-06 2015-12-10 California Institute Of Technology Rotating scattering plane based nonlinear optical spectrometer to study the crystallographic and electronic symmetries of crystals
SG11201703585RA (en) 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
KR102678955B1 (ko) * 2015-05-19 2024-06-26 케이엘에이 코포레이션 오버레이 측정을 위한 지형 위상 제어

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090219515A1 (en) * 2005-09-22 2009-09-03 Hartmut Spennemann Interferometic Measuring Device
US20070134563A1 (en) * 2005-11-18 2007-06-14 Kazuya Fukuhara Photomask and method of manufacturing semiconductor device
US20070279630A1 (en) * 2006-06-01 2007-12-06 Kla-Tencor Technologies Corporation Order selected overlay metrology
US20080266561A1 (en) * 2007-04-26 2008-10-30 Kla-Tencor Corporation Optical gain approach for enhancement of overlay and alignment systems performance
US20140111791A1 (en) * 2012-10-19 2014-04-24 Kla-Tencor Corporation Phase characterization of targets
TW201447622A (zh) * 2013-04-19 2014-12-16 克萊譚克公司 裝置上之量測

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
專書韕Leibold韕Design and Analysis of Circular Diffraction Gratings韕 韕-韕-韕February 2015韕 韕 *

Also Published As

Publication number Publication date
JP2021128170A (ja) 2021-09-02
JP7250064B2 (ja) 2023-03-31
JP2021128169A (ja) 2021-09-02
TW202113505A (zh) 2021-04-01
CN107636538A (zh) 2018-01-26
US20200142322A1 (en) 2020-05-07
TWI752764B (zh) 2022-01-11
JP2021128168A (ja) 2021-09-02
KR102334168B1 (ko) 2021-12-06
JP7250063B2 (ja) 2023-03-31
KR20180000730A (ko) 2018-01-03
JP6879939B2 (ja) 2021-06-02
SG10201912822UA (en) 2020-02-27
US11314173B2 (en) 2022-04-26
KR20210149884A (ko) 2021-12-09
US20200142323A1 (en) 2020-05-07
US20210255551A1 (en) 2021-08-19
SG10201912818WA (en) 2020-02-27
TWI755987B (zh) 2022-02-21
US10520832B2 (en) 2019-12-31
KR102665579B1 (ko) 2024-05-10
CN112859540A (zh) 2021-05-28
KR102607646B1 (ko) 2023-11-29
TWI715582B (zh) 2021-01-11
KR20210149885A (ko) 2021-12-09
TW201712435A (zh) 2017-04-01
US20200142321A1 (en) 2020-05-07
WO2016187468A1 (en) 2016-11-24
US20170146915A1 (en) 2017-05-25
CN112859542A (zh) 2021-05-28
KR102678955B1 (ko) 2024-06-26
JP2018515782A (ja) 2018-06-14
CN112859541A (zh) 2021-05-28
JP7253006B2 (ja) 2023-04-05
SG10201912816UA (en) 2020-02-27
CN112859540B (zh) 2024-10-18
TW202122930A (zh) 2021-06-16
CN107636538B (zh) 2021-02-19
KR20210149886A (ko) 2021-12-09
TW202113504A (zh) 2021-04-01

Similar Documents

Publication Publication Date Title
TWI755987B (zh) 具有用於疊對測量之形貌相位控制之光學系統
KR102604927B1 (ko) 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 시스템 및 방법
US9189705B2 (en) Phase-controlled model-based overlay measurement systems and methods
TWI709001B (zh) 度量衡裝置、微影系統及測量結構的方法
IL282673A (en) Spectroscopic beam profile metrology
WO2009115342A1 (en) Inspection apparatus for lithography
US10620550B2 (en) Metrology method and apparatus
KR20230107585A (ko) 다크 필드 디지털 홀로그래피 현미경 및 연계된 메트롤로지 방법