JP6879939B2 - オーバレイ計測用トポグラフィック位相制御 - Google Patents

オーバレイ計測用トポグラフィック位相制御 Download PDF

Info

Publication number
JP6879939B2
JP6879939B2 JP2017560538A JP2017560538A JP6879939B2 JP 6879939 B2 JP6879939 B2 JP 6879939B2 JP 2017560538 A JP2017560538 A JP 2017560538A JP 2017560538 A JP2017560538 A JP 2017560538A JP 6879939 B2 JP6879939 B2 JP 6879939B2
Authority
JP
Japan
Prior art keywords
imaging
target
optical system
weighing tool
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017560538A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018515782A5 (enExample
JP2018515782A (ja
Inventor
ウラディミル レビンスキ
ウラディミル レビンスキ
ユリ パスコヴァー
ユリ パスコヴァー
アノン マナッセン
アノン マナッセン
ヨニ シャリボ
ヨニ シャリボ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2018515782A publication Critical patent/JP2018515782A/ja
Publication of JP2018515782A5 publication Critical patent/JP2018515782A5/ja
Priority to JP2021077245A priority Critical patent/JP7250064B2/ja
Priority to JP2021077244A priority patent/JP7250063B2/ja
Priority to JP2021077243A priority patent/JP7253006B2/ja
Application granted granted Critical
Publication of JP6879939B2 publication Critical patent/JP6879939B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/32—Fiducial marks and measuring scales within the optical system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/653—Coherent methods [CARS]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Theoretical Computer Science (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
JP2017560538A 2015-05-19 2016-05-19 オーバレイ計測用トポグラフィック位相制御 Active JP6879939B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021077245A JP7250064B2 (ja) 2015-05-19 2021-04-30 イメージング計量ターゲットおよび計量方法
JP2021077244A JP7250063B2 (ja) 2015-05-19 2021-04-30 光学システム
JP2021077243A JP7253006B2 (ja) 2015-05-19 2021-04-30 光学システム

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562163783P 2015-05-19 2015-05-19
US62/163,783 2015-05-19
US201562222724P 2015-09-23 2015-09-23
US62/222,724 2015-09-23
PCT/US2016/033353 WO2016187468A1 (en) 2015-05-19 2016-05-19 Topographic phase control for overlay measurement

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2021077244A Division JP7250063B2 (ja) 2015-05-19 2021-04-30 光学システム
JP2021077243A Division JP7253006B2 (ja) 2015-05-19 2021-04-30 光学システム
JP2021077245A Division JP7250064B2 (ja) 2015-05-19 2021-04-30 イメージング計量ターゲットおよび計量方法

Publications (3)

Publication Number Publication Date
JP2018515782A JP2018515782A (ja) 2018-06-14
JP2018515782A5 JP2018515782A5 (enExample) 2019-06-13
JP6879939B2 true JP6879939B2 (ja) 2021-06-02

Family

ID=57320785

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2017560538A Active JP6879939B2 (ja) 2015-05-19 2016-05-19 オーバレイ計測用トポグラフィック位相制御
JP2021077245A Active JP7250064B2 (ja) 2015-05-19 2021-04-30 イメージング計量ターゲットおよび計量方法
JP2021077244A Active JP7250063B2 (ja) 2015-05-19 2021-04-30 光学システム
JP2021077243A Active JP7253006B2 (ja) 2015-05-19 2021-04-30 光学システム

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2021077245A Active JP7250064B2 (ja) 2015-05-19 2021-04-30 イメージング計量ターゲットおよび計量方法
JP2021077244A Active JP7250063B2 (ja) 2015-05-19 2021-04-30 光学システム
JP2021077243A Active JP7253006B2 (ja) 2015-05-19 2021-04-30 光学システム

Country Status (7)

Country Link
US (5) US10520832B2 (enExample)
JP (4) JP6879939B2 (enExample)
KR (4) KR102334168B1 (enExample)
CN (4) CN112859541A (enExample)
SG (3) SG10201912822UA (enExample)
TW (4) TWI755987B (enExample)
WO (1) WO2016187468A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI755987B (zh) 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
US9989806B2 (en) * 2015-09-10 2018-06-05 Samsung Display Co., Ltd. Color conversion panel and display device including the same
KR102393740B1 (ko) 2015-12-08 2022-05-02 케이엘에이 코포레이션 편광 타겟 및 편광 조명을 사용한 회절 차수의 진폭 및 위상의 제어
US11112704B2 (en) * 2017-02-10 2021-09-07 Kla-Tencor Corporation Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
WO2018226215A1 (en) * 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
EP3454123A1 (en) * 2017-09-06 2019-03-13 ASML Netherlands B.V. Metrology method and apparatus
WO2019091678A1 (en) * 2017-11-07 2019-05-16 Asml Netherlands B.V. Metrology apparatus and a method of determining a characteristic of interest
EP3499312A1 (en) * 2017-12-15 2019-06-19 ASML Netherlands B.V. Metrology apparatus and a method of determining a characteristic of interest
US11085754B2 (en) * 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
EP3521929A1 (en) * 2018-02-02 2019-08-07 ASML Netherlands B.V. Method of determining an optimal focus height for a metrology apparatus
JP7227988B2 (ja) 2018-02-27 2023-02-22 エーエスエムエル ネザーランズ ビー．ブイ． 基板上の１つ又は複数の構造の特性を算出するメトロロジ装置及び方法
JP7177847B2 (ja) * 2018-03-19 2022-11-24 ケーエルエー コーポレイション 複数波長を用いたオーバーレイ測定
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
WO2019236084A1 (en) * 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
KR102729956B1 (ko) * 2018-08-28 2024-11-13 케이엘에이 코포레이션 2-회절된 차수들의 이미징을 사용한 축외 조명 오버레이 측정
CN113260924B (zh) * 2018-12-31 2025-02-18 Asml荷兰有限公司 用于重叠量测的方法及其设备
JP7595599B2 (ja) 2019-02-14 2024-12-06 ケーエルエー コーポレイション トポグラフィ半導体デバイスウェハの製造における位置ずれの測定方法
WO2020190318A1 (en) * 2019-03-21 2020-09-24 Kla Corporation Parameter-stable misregistration measurement amelioration in semiconductor devices
US11703460B2 (en) * 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
KR102825815B1 (ko) * 2020-06-18 2025-06-27 삼성전자주식회사 스루-포커스 이미지 기반 계측 장치, 그것의 동작 방법, 및 그 동작을 실행하는 컴퓨팅 장치
CN112465694B (zh) * 2020-11-27 2024-10-15 中国科学院西安光学精密机械研究所 基于相位变化的医学图像数据增广方法
US11713959B2 (en) * 2021-03-17 2023-08-01 Kla Corporation Overlay metrology using spectroscopic phase
JP2024521436A (ja) * 2021-06-09 2024-05-31 エーエスエムエル ネザーランズ ビー．ブイ． アパーチャアポダイゼーションを備えた構造照明を使用したレチクル粒子検出用の検査システム
CN113467033A (zh) * 2021-06-24 2021-10-01 南昌欧菲光电技术有限公司 一种摄像头模组及其透镜的定位方法
CN113777731A (zh) * 2021-08-11 2021-12-10 中国工程物理研究院应用电子学研究所 一种共轴反转环型连续变密度衰减器装置及其工作方法
CN113985711B (zh) * 2021-10-28 2024-02-02 无锡卓海科技股份有限公司 一种套刻测量装置
KR102874693B1 (ko) * 2023-08-17 2025-10-29 (주) 오로스테크놀로지 이미지 기반 오버레이 시스템에서 위상 이미지 획득 장치 및 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644172A (en) * 1984-02-22 1987-02-17 Kla Instruments Corporation Electronic control of an automatic wafer inspection system
US5666197A (en) * 1996-08-21 1997-09-09 Polaroid Corporation Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography
JPH10284370A (ja) * 1997-04-03 1998-10-23 Nikon Corp 焦点位置検出装置及び該装置を備えた投影露光装置
JP2001307975A (ja) * 2000-02-18 2001-11-02 Nikon Corp 荷電粒子線露光装置及び半導体デバイスの製造方法
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP2002170760A (ja) * 2000-12-01 2002-06-14 Nikon Corp 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法
US7072502B2 (en) * 2001-06-07 2006-07-04 Applied Materials, Inc. Alternating phase-shift mask inspection method and apparatus
US6794671B2 (en) * 2002-07-17 2004-09-21 Particle Sizing Systems, Inc. Sensors and methods for high-sensitivity optical particle counting and sizing
EP1570232B1 (en) * 2002-12-05 2016-11-02 KLA-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7230704B2 (en) 2003-06-06 2007-06-12 Tokyo Electron Limited Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
JP4734261B2 (ja) * 2004-02-18 2011-07-27 ケーエルエー−テンカー コーポレイション 連続変化するオフセットマークと、オーバレイ決定方法
DE102005006724A1 (de) * 2004-10-20 2006-08-10 Universität Stuttgart Verfahren und Anordung zur konfokalen Spektral-Interferometrie, insbesondere auch zur optischen Kohärenz-Tomografie (OCT)und/oder optischen Kohärenz-Mikroskopie (OCM)von biologischen und technischen Objekten
US20060164649A1 (en) 2005-01-24 2006-07-27 Eliezer Rosengaus Multi-spectral techniques for defocus detection
DE102006016131A1 (de) * 2005-09-22 2007-03-29 Robert Bosch Gmbh Interferometrische Messvorrichtung
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法
US20070238955A1 (en) * 2006-01-18 2007-10-11 The General Hospital Corporation Systems and methods for generating data using one or more endoscopic microscopy techniques
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
DE102006021557B3 (de) * 2006-05-08 2007-07-12 Carl Mahr Holding Gmbh Vorrichtung und Verfahren zur kombinierten interferometrischen und abbildungsbasierten Geometrieerfassung, insbesondere in der Mikrosystemtechnik
US7528941B2 (en) * 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
TW200905157A (en) * 2007-04-12 2009-02-01 Nikon Corp Measuring method, exposure method, and device fabricating method
JP4966724B2 (ja) * 2007-04-20 2012-07-04 キヤノン株式会社 露光装置及びデバイス製造方法
WO2008134378A1 (en) * 2007-04-26 2008-11-06 Kla-Tencor Corporation Optical gain approach for enhancement of overlay and alignment systems performance
US7869022B2 (en) * 2007-07-18 2011-01-11 Asml Netherlands B.V. Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US20090034071A1 (en) * 2007-07-31 2009-02-05 Dean Jennings Method for partitioning and incoherently summing a coherent beam
US9239455B2 (en) * 2007-12-31 2016-01-19 Stc.Unm Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP5319978B2 (ja) * 2008-07-28 2013-10-16 株式会社日立メディアエレクトロニクス 光ピックアップ装置、光ディスク装置および回折格子
EP2329322B1 (en) * 2008-09-22 2016-09-07 ASML Netherlands BV Lithographic apparatus and lithographic method
JP5361322B2 (ja) * 2008-10-14 2013-12-04 キヤノン株式会社 露光装置及びデバイスの製造方法
DE102009044151B4 (de) * 2009-05-19 2012-03-29 Kla-Tencor Mie Gmbh Vorrichtung zur optischen Waferinspektion
NL2005162A (en) * 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
CN101699265A (zh) * 2009-10-28 2010-04-28 上海理工大学 动态偏振光散射颗粒测量装置及测量方法
US8896832B2 (en) 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
JP6008851B2 (ja) 2010-07-19 2016-10-19 エーエスエムエル ネザーランズ ビー．ブイ． オーバレイ誤差を決定する方法及び装置
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
KR101976152B1 (ko) * 2011-02-10 2019-05-09 케이엘에이-텐코 코포레이션 오버레이 계측의 콘트라스트 증강을 위한 구조화 조명
US20120224183A1 (en) * 2011-03-02 2012-09-06 Zygo Corporation Interferometric metrology of surfaces, films and underresolved structures
US9645502B2 (en) * 2011-04-08 2017-05-09 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
US8582114B2 (en) 2011-08-15 2013-11-12 Kla-Tencor Corporation Overlay metrology by pupil phase analysis
US9310186B2 (en) * 2012-04-23 2016-04-12 Ben-Gurion University Of The Negev Research And Development Authority True-spectroscopic dual mode high resolution full-field optical coherence tomography using liquid crystal devices
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
US9329033B2 (en) 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) * 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US9875946B2 (en) * 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
CN103411557B (zh) * 2013-08-15 2016-02-03 哈尔滨工业大学 阵列照明的角谱扫描准共焦环形微结构测量装置与方法
CN106164775B (zh) * 2014-02-03 2019-07-19 Asml荷兰有限公司 量测方法和设备、衬底、光刻系统和器件制造方法
KR101906293B1 (ko) * 2014-02-21 2018-10-10 에이에스엠엘 네델란즈 비.브이. 타겟 배열 및 연계된 타겟의 최적화
KR102345196B1 (ko) * 2014-04-07 2021-12-29 노바 메주어링 인스트루먼츠 엘티디. 광학 위상 측정 방법 및 시스템
US20150355098A1 (en) * 2014-05-06 2015-12-10 California Institute Of Technology Rotating scattering plane based nonlinear optical spectrometer to study the crystallographic and electronic symmetries of crystals
CN112698551B (zh) 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
TWI755987B (zh) * 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統

Also Published As

Publication number Publication date
US20200142322A1 (en) 2020-05-07
JP7250064B2 (ja) 2023-03-31
TW202113505A (zh) 2021-04-01
US20210255551A1 (en) 2021-08-19
WO2016187468A1 (en) 2016-11-24
SG10201912816UA (en) 2020-02-27
CN112859540A (zh) 2021-05-28
KR20210149885A (ko) 2021-12-09
TW201712435A (zh) 2017-04-01
TWI755987B (zh) 2022-02-21
SG10201912818WA (en) 2020-02-27
TW202113504A (zh) 2021-04-01
KR20210149886A (ko) 2021-12-09
CN112859542A (zh) 2021-05-28
KR20180000730A (ko) 2018-01-03
KR102607646B1 (ko) 2023-11-29
CN112859541A (zh) 2021-05-28
JP2021128170A (ja) 2021-09-02
CN112859540B (zh) 2024-10-18
TWI760984B (zh) 2022-04-11
US20170146915A1 (en) 2017-05-25
KR102665579B1 (ko) 2024-05-10
JP2021128168A (ja) 2021-09-02
KR102678955B1 (ko) 2024-06-26
TWI715582B (zh) 2021-01-11
KR20210149884A (ko) 2021-12-09
US11314173B2 (en) 2022-04-26
US20200142323A1 (en) 2020-05-07
JP2021128169A (ja) 2021-09-02
TWI752764B (zh) 2022-01-11
US10520832B2 (en) 2019-12-31
SG10201912822UA (en) 2020-02-27
TW202122930A (zh) 2021-06-16
JP2018515782A (ja) 2018-06-14
US20200142321A1 (en) 2020-05-07
KR102334168B1 (ko) 2021-12-06
JP7250063B2 (ja) 2023-03-31
JP7253006B2 (ja) 2023-04-05
CN107636538A (zh) 2018-01-26
CN107636538B (zh) 2021-02-19

Similar Documents

Publication Publication Date Title
JP6879939B2 (ja) オーバレイ計測用トポグラフィック位相制御
US20210208513A1 (en) Metrology parameter determination and metrology recipe selection
KR20200096843A (ko) 타겟 측정 방법, 및 계측 장치
JP2020518848A (ja) メトロロジパラメータ決定及びメトロロジレシピ選択
JP7682146B2 (ja) メトロロジ方法及び関連のコンピュータプロダクト
US10620550B2 (en) Metrology method and apparatus
KR20190142381A (ko) 계측 장치
TWI792653B (zh) 暗場數位全像顯微鏡及相關度量衡方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190513

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190513

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200303

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20200528

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200731

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210203

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210406

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210430

R150 Certificate of patent or registration of utility model

Ref document number: 6879939

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250