TWI750246B - Sheet, tape and manufacturing method of semiconductor device - Google Patents

Abstract

The present disclosure provides a sheet to which a marking excellent in durability can be attached with or without curing treatment. The sheet of the present disclosure includes a dicing film including a substrate layer and an adhesive layer on the substrate layer. The sheet of the present disclosure also includes a semiconductor backside protective film on the adhesive layer. In the sheet of the present disclosure, in the DSC curve of the DSC measurement of the semiconductor back surface protective film, the exothermic peak that appears in the range of 50°C to 300°C has an exothermic amount of 40 J/g or less.

Description

Sheet, tape, and method of manufacturing semiconductor device

The present disclosure relates to a sheet, an adhesive tape, and a method for manufacturing a semiconductor device.

When the dicing film-integrated semiconductor backside protective film is used to manufacture a semiconductor device, the semiconductor backside protective film located on the dicing film may be bonded to a semiconductor wafer, the semiconductor backside protective film may be cured, and a laser beam may be used to cure the semiconductor backside protective film. The rear semiconductor backside protective film is marked, the semiconductor wafer is diced, and the wafer with the cured semiconductor backside protective film is peeled off from the dicing film. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-9711 [Patent Document 2] Japanese Patent Laid-Open No. 2011-151360 [Patent Document 3] Japanese Patent Laid-Open No. 2011-151361

[Problem to be Solved by the Invention] In the method going through these steps, since the semiconductor backside protective film is cured before the laser marking, the laser marking is not easily damaged in reflow soldering.

However, in such a method, the peeling force of a semiconductor back surface protective film and a dicing film increases by the hardening process of a semiconductor back surface protective film. The rise in peeling force leads to poor pickup of the wafer with the cured semiconductor back surface protective film.

An object of the present disclosure is to provide a sheet to which a marking excellent in durability can be attached irrespective of the presence or absence of curing treatment. It is also an object of the present disclosure to provide an adhesive tape and a method of manufacturing a semiconductor device. [means used to solve problems]

The sheet of the present disclosure includes a dicing film including a substrate layer and an adhesive layer on the substrate layer. The sheet of the present disclosure also includes a semiconductor backside protective film on the adhesive layer. In the sheet of the present disclosure, in the DSC curve measured by differential scanning calorimetry (DSC) of the semiconductor back protective film, the exothermic peak that appears in the range of 50°C to 300°C has a heat release amount of 40 J/g or less. In the present disclosure, curing of the semiconductor backside protective film does not substantially proceed during reflow soldering, and markings are not destroyed during reflow soldering, so that a mark excellent in durability can be added to the semiconductor backside protective film.

In the sheet of the present disclosure, it is preferable that the semiconductor backside protective film contains the first layer. The first layer is preferably a cured layer (hereinafter, referred to as a "cured layer"). In the DSC curve of the DSC measurement of the first layer, the exothermic peak which appears in the range of 50°C to 300°C has an exothermic heat of 40 J/g or less.

In the sheet of the present disclosure, it is preferable that the semiconductor backside protective film contains the second layer. The second layer preferably does not contain a thermal cure accelerating catalyst. In the case where the semiconductor back surface protective film includes the second layer and the first layer, the first layer is preferably located between the adhesive layer and the second layer.

The tape of the present disclosure includes a release liner, and a sheet on the release liner.

The method of manufacturing a semiconductor device of the present disclosure includes: a step of fixing a semiconductor wafer having a modified region on a semiconductor back surface protective film of a sheet; and a step of dividing the semiconductor wafer from the modified region by expanding the dicing film.

The present disclosure will be described in detail by describing the embodiments below, but the present disclosure is not limited to these embodiments.

Embodiment 1 As shown in FIG. 1 , an adhesive tape 1 includes a release liner 13 , and sheets 71 a , 71 b , 71 c , . The adhesive tape 1 may be in the form of a roll. The distance between the piece 71a and the piece 71b, the distance between the piece 71b and the piece 71c, . . . the distance between the piece 71l and the piece 71m is fixed.

The release liner 13 is tape-shaped. The release liner 13 is, for example, a polyethylene terephthalate (PET) film.

As shown in FIG. 2 , the sheet 71 includes the dicing film 12 . The dicing film 12 has a disc shape. The dicing film 12 includes a base material layer 121 and an adhesive layer 122 on the base material layer 121 . The base material layer 121 has a disk shape. Both sides of the base material layer 121 may be defined by the first main surface and the second main surface. The first main surface of the base material layer 121 is in contact with the adhesive layer 122 . The thickness of the base material 121 is, for example, 50 μm to 150 μm. The base material layer 121 may include a polypropylene layer. The base material layer 121 may include a polypropylene layer and a plastic layer other than the polypropylene layer. On the other hand, the base material layer 121 may contain a polypropylene monolayer. The base material layer 121 may contain an ethylene-vinyl acetate copolymer (hereinafter, referred to as "EVA") layer. The base material layer 121 may include an EVA layer and a plastic layer other than the EVA layer. The substrate layer 121 may also include a single layer of EVA. The base material layer 121 preferably has a property of transmitting energy rays. The adhesive layer 122 has a disc shape. The two sides of the adhesive layer 122 may be defined by a first main side and a second main side. The first main surface of the adhesive layer 122 is in contact with the first layer 111 of the semiconductor back surface protection film 11 . The second main surface of the adhesive layer 122 is in contact with the base material layer 121 . The thickness of the adhesive layer 122 is preferably 3 μm or more, and more preferably 5 μm or more. The thickness of the adhesive layer 122 is preferably 50 μm or less, and more preferably 30 μm or less. The adhesive constituting the adhesive layer 122 is, for example, an acrylic adhesive or a rubber-based adhesive. Among them, acrylic adhesives are preferred. The acrylic adhesive may be, for example, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or two or more (meth)acrylic acid alkyl esters as a monomer component.

The adhesive layer 122 may include the first portion 122A. The first portion 122A may have a disc shape. The first portion 122A is in contact with the semiconductor back surface protective film 11 . The first portion 122A is harder than the second portion 122B. The first portion 122A may be cured by energy rays. The adhesive layer 122 may also include a second portion 122B surrounding the first portion 122A. The second portion 122B may have an annular plate shape. The second part 122B may have the property of being cured by energy rays. As an energy ray, an ultraviolet-ray etc. are mentioned. The second portion 122B may include an annular plate-shaped first region and an annular plate-shaped second region surrounding the first region. The first region of the second portion 122B is in contact with the semiconductor back surface protection film 11 . On the other hand, the second region of the second portion 122B is not in contact with the semiconductor back surface protective film 11 .

The sheet 71 includes the semiconductor backside protective film 11 . The semiconductor back surface protective film 11 has a disk shape. Both surfaces of the semiconductor back surface protection film 11 may be defined by the first main surface and the second main surface. The first main surface of the semiconductor back surface protective film 11 is in contact with the release liner 13 . The second main surface of the semiconductor back surface protective film 11 is in contact with the adhesive layer 122 .

The thickness of the semiconductor back surface protective film 11 is preferably 2 μm or more, more preferably 4 μm or more, still more preferably 6 μm or more, and particularly preferably 10 μm or more. The thickness of the semiconductor back surface protective film 11 is preferably 200 μm or less, more preferably 160 μm or less, still more preferably 100 μm or less, and particularly preferably 80 μm or less.

In the DSC curve of the DSC measurement of the semiconductor back surface protective film 11 , the exothermic peak which appears in the range of 50° C. to 300° C. preferably has a heat release amount of 40 J/g or less. Since the heat generation amount is 40 J/g or less, the hardening of the semiconductor back surface protective film 11 does not substantially proceed during reflow soldering, and the marks are not destroyed during reflow soldering. The DSC measurement can be performed in a nitrogen atmosphere at a temperature increase rate of 10°C/min. The heat release amount was calculated|required based on the description of an Example. When a plurality of exothermic peaks appear in the range of 50°C to 300°C, the total exothermic heat of these exothermic peaks is referred to as "exothermic heat".

The semiconductor backside protective film 11 includes a first layer 111 and a second layer 112 . The first layer 111 is located between the adhesive layer 122 and the second layer 112 . The second layer 112 is located between the release liner 13 and the first layer 111 .

The semiconductor back surface protective film 11 includes the first layer 111 . The first layer 111 is disc-shaped. Both sides of the first layer 111 may be defined by a first main surface and a second main surface. The first main surface of the first layer 111 is in contact with the second layer 112 . The second main surface of the first layer 111 is in contact with the adhesive layer 122 . The thickness of the first layer 111 is, for example, 1 μm to 50 μm.

The first layer 111 is preferably a cured layer. The first layer 111 can be cured by heating during film formation. The first layer 111 may be a layer for marking with a laser.

In the DSC curve of the DSC measurement of the first layer 111 , the exothermic peak that appears in the range of 50° C. to 300° C. has an exothermic heat of 40 J/g or less. The amount of heat release can be adjusted by the type of the thermal curing accelerating catalyst, the amount of the thermal curing accelerating catalyst added, the heating conditions at the time of film formation, and the like.

The first layer 111 is preferably colored. When the first layer 111 is colored, the dicing film 12 and the semiconductor back surface protection film 11 can be easily distinguished in some cases. The first layer 111 is preferably dark, such as black, blue, and red. Black is particularly preferred. This is because the laser marking is easy to visually recognize.

A dark color basically means: L* defined in the L*a*b* colorimetric system is 60 or less (0-60) [preferably 50 or less (0-50), more preferably 40 or less (0-40) ] a darker color.

In addition, black basically means that L* defined in the L*a*b* colorimetric system is 35 or less (0-35) [preferably 30 or less (0-30), more preferably 25 or less (0-25) )] is the black color. It should be noted that, in black, a* and b* specified in the L*a*b* colorimetric system can be appropriately selected according to the value of L*, respectively. As a* and b*, for example, both are preferably -10 to 10, more preferably -5 to 5, and particularly preferably -3 to 3 (especially 0 or close to 0).

It should be noted that L*, a*, and b* specified in the L*a*b* color system can be measured by using a colorimeter (trade name "CR-200", manufactured by Minolta; colorimeter). obtained by measurement. It should be noted that the L*a*b* color system is the color space recommended by the International Commission on Illumination (CIE) in 1976, which refers to the color space called the CIE1976 (L*a*b*) color system . In addition, the L*a*b* colorimetric system is specified in JIS Z 8729 of Japanese Industrial Standards.

The first layer 111 may contain a resin component. The content of the resin component in the first layer 111 is preferably 30% by weight or more, and more preferably 40% by weight or more. The content of the resin component in the first layer 111 is preferably 80% by weight or less, and more preferably 70% by weight or less.

The resin component may contain a thermoplastic resin and a thermosetting resin before curing. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, and more preferably 20% by weight or more. The upper limit of the content of the thermoplastic resin in 100% by weight of the resin component is, for example, 70% by weight, preferably 50% by weight, and more preferably 40% by weight. The content of the thermosetting resin is preferably 30% by weight or more, more preferably 50% by weight or more, in 100% by weight of the resin component. The upper limit of the content of the thermosetting resin is, for example, 90% by weight, preferably 80% by weight, and more preferably 70% by weight in 100% by weight of the resin component.

Examples of thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as nylon 6 or nylon 66, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) or PBT ( Saturated polyester resin such as polybutylene terephthalate), polyamide imide resin, or fluororesin, etc. Thermoplastic resins may be used alone or in combination of two or more. Among them, acrylic resins are preferred.

As a thermosetting resin, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, etc. are mentioned. Thermosetting resins may be used alone or in combination of two or more. As a thermosetting resin, the epoxy resin which contains less ionic impurities etc. which corrode a semiconductor wafer is especially preferable. Moreover, as a hardening|curing agent of an epoxy resin, a phenol resin can be used suitably.

The epoxy resin is not particularly limited, and for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin can be used. Bisphenol A epoxy resin, Bisphenol AF epoxy resin, Biphenyl epoxy resin, Naphthalene epoxy resin, Phenol epoxy resin, Phenol novolac epoxy resin, O-cresol novolak ring Oxygen resin, trihydroxyphenylmethane type epoxy resin, tetrahydroxyphenylethane type epoxy resin and other difunctional epoxy resin or multifunctional epoxy resin; or hydantoin type epoxy resin, isocyanuric acid Epoxy resins such as triglycidyl ester type epoxy resins and glycidylamine type epoxy resins.

The first layer 111 may contain a liquid epoxy resin at 25° C. and a solid epoxy resin at 25° C. before curing. In this case, workability is excellent. The value of the ratio of the liquid epoxy resin to the solid epoxy resin is, for example, 0.4 or more, preferably 0.6 or more, more preferably 0.8 or more, and further preferably 1.0 or more. Here, the ratio of the liquid epoxy resin to the solid epoxy resin is the weight ratio of the liquid epoxy resin content to the solid epoxy resin content.

Phenol resins are substances that function as curing agents for epoxy resins, and examples thereof include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. Resins and other novolac phenolic resins; resole phenolic resins; polyhydroxystyrenes such as polyparahydroxystyrene, etc. Phenol resins may be used alone or in combination of two or more. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferable.

About the mixing ratio of an epoxy resin and a phenol resin, it is preferable to mix|blend so that the hydroxyl group in a phenol resin may be 0.5 equivalent - 2.0 equivalent with respect to 1 equivalent of epoxy groups in an epoxy resin, for example. More preferably, it is 0.8 to 1.2 equivalents.

The first layer 111 may contain a thermal curing accelerating catalyst before curing. For example, amine-based curing accelerators, phosphorus-containing curing accelerators, imidazole-based curing accelerators, boron-containing curing accelerators, phosphorus-containing boron-based curing accelerators, and the like. The content of the thermosetting accelerator catalyst is, for example, 1 part by weight to 100 parts by weight with respect to 100 parts by weight of the resin component.

The first layer 111 may contain a filler. Inorganic fillers are preferred. Inorganic fillers such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, Palladium, solder, etc. The fillers may be used alone or in combination of two or more. Among them, silica is preferable, and fused silica is particularly preferable. The average particle diameter of the inorganic filler is preferably in the range of 0.1 μm to 80 μm. The average particle diameter of the inorganic filler can be measured, for example, with a laser diffraction type fine distribution measuring apparatus.

The content of the filler in the first layer 111 is preferably 10% by weight or more, more preferably 20% by weight or more, and further preferably 30% by weight or more. The content of the filler in the first layer 111 is preferably 70% by weight or less, more preferably 60% by weight or less, and further preferably 50% by weight or less.

The first layer 111 preferably contains a colorant. Colorants are, for example, dyes and pigments. Among them, dyes are preferred, and black dyes are more preferred. The content of the colorant in the first layer 111 before curing is preferably 0.5% by weight or more, more preferably 1% by weight or more, and further preferably 2% by weight or more. The content of the colorant in the first layer 111 before curing is preferably 10% by weight or less, more preferably 8% by weight or less, and further preferably 5% by weight or less.

The first layer 111 may appropriately contain other additives. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, extenders, antiaging agents, antioxidants, surfactants, and the like.

The semiconductor backside protective film 11 includes the second layer 112 . The second layer 112 has a disc shape. The two sides of the second layer 112 may be defined by the first major surface and the second major surface. The first main surface of the second layer 112 is in contact with the release liner 13 . The second main surface of the second layer 112 is in contact with the first layer 111 . The thickness of the second layer 112 is, for example, 1 μm to 50 μm.

The second layer 112 may have thermal curability. The second layer 112 may be an uncured layer.

In the DSC curve of the DSC measurement of the second layer 112 , the exothermic peak that appears in the range of 50° C. to 300° C. has an exothermic amount of 40 J/g or less.

The second layer 112 may be colored. When the second layer 112 is colored, the dicing film 12 and the semiconductor back surface protection film 11 can be easily distinguished in some cases. The second layer 112 is preferably a dark color such as black, blue, red, or the like. Black is particularly preferred. This is because the laser marking is easy to visually recognize. The preferred range of L* specified in the L*a*b* colorimetric system is the same as the preferred range of L* in the first layer 111 .

The second layer 112 may contain a resin component. The content of the resin component in the second layer 112 is preferably 30% by weight or more, and more preferably 40% by weight or more. The content of the resin component in the second layer 112 is preferably 80% by weight or less, and more preferably 70% by weight or less.

The resin component may contain thermoplastic resins and thermosetting resins. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, and more preferably 20% by weight or more. The upper limit of the content of the thermoplastic resin in 100% by weight of the resin component is, for example, 70% by weight, preferably 50% by weight, and more preferably 40% by weight. The content of the thermosetting resin is preferably 30% by weight or more, more preferably 50% by weight or more, in 100% by weight of the resin component. The upper limit of the content of the thermosetting resin is, for example, 90% by weight, preferably 80% by weight, and more preferably 70% by weight in 100% by weight of the resin component.

Examples of thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as nylon 6 or nylon 66, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) or PBT ( Saturated polyester resin such as polybutylene terephthalate), polyamide imide resin, or fluororesin, etc. These thermoplastic resins may be used alone or in combination of two or more. Among them, acrylic resins are preferred.

As a thermosetting resin, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, etc. are mentioned. Thermosetting resins may be used alone or in combination of two or more. As a thermosetting resin, the epoxy resin which contains less ionic impurities etc. which corrode a semiconductor wafer is especially preferable. Moreover, as a hardening|curing agent of an epoxy resin, a phenol resin can be used suitably.

The epoxy resin is not particularly limited, and for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin can be used. Bisphenol A epoxy resin, Bisphenol AF epoxy resin, Biphenyl epoxy resin, Naphthalene epoxy resin, Phenol epoxy resin, Phenol novolac epoxy resin, O-cresol novolak ring Oxygen resin, trihydroxyphenylmethane type epoxy resin, tetrahydroxyphenylethane type epoxy resin and other difunctional epoxy resin or multifunctional epoxy resin; or hydantoin type epoxy resin, isocyanuric acid Epoxy resins such as triglycidyl ester type epoxy resins and glycidylamine type epoxy resins.

The second layer 112 may include an epoxy resin that is liquid at 25°C and an epoxy resin that is solid at 25°C. In this case, workability is excellent. The value of the ratio of the liquid epoxy resin to the solid epoxy resin is, for example, 0.4 or more, preferably 0.6 or more, more preferably 0.8 or more, and further preferably 1.0 or more. Here, the ratio of the liquid epoxy resin to the solid epoxy resin is the weight ratio of the liquid epoxy resin content to the solid epoxy resin content.

Phenol resins are substances that function as curing agents for epoxy resins, and examples thereof include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. Resins and other novolac phenolic resins; resole phenolic resins; polyhydroxystyrenes such as polyparahydroxystyrene, etc. Phenol resins may be used alone or in combination of two or more. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferable.

About the mixing ratio of an epoxy resin and a phenol resin, it is preferable to mix|blend so that the hydroxyl group in a phenol resin may be 0.5 equivalent - 2.0 equivalent with respect to 1 equivalent of epoxy groups in an epoxy resin, for example. More preferably, it is 0.8 to 1.2 equivalents.

The second layer 112 preferably does not contain a thermal cure promoting catalyst. The thermal curing accelerator is, for example, an amine-based curing accelerator, a phosphorus-containing curing accelerator, an imidazole-based curing accelerator, a boron-containing curing accelerator, a phosphorus-containing boron-based curing accelerator, and the like.

The second layer 112 may contain fillers. Inorganic fillers are preferred. Inorganic fillers such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, Palladium, solder, etc. The fillers may be used alone or in combination of two or more. Among them, silica is preferable, and fused silica is particularly preferable. The average particle diameter of the inorganic filler is preferably in the range of 0.1 μm to 80 μm. The average particle diameter of the inorganic filler can be measured, for example, by a laser diffraction type fine distribution measuring apparatus.

The content of the filler in the second layer 112 is preferably 10% by weight or more, more preferably 20% by weight or more, and still more preferably 30% by weight or more. The content of the filler in the second layer 112 is preferably 70% by weight or less, more preferably 60% by weight or less, and further preferably 50% by weight or less.

The second layer 112 may contain colorants. Colorants are, for example, dyes and pigments. Among them, dyes are preferred, and black dyes are more preferred. The content of the colorant in the second layer 112 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and further preferably 2% by weight or more. The content of the colorant in the second layer 112 is preferably 10% by weight or less, more preferably 8% by weight or less, and further preferably 5% by weight or less.

The second layer 112 may appropriately contain other additives. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, extenders, antiaging agents, antioxidants, surfactants, and the like.

Sheet 71 can be used to manufacture semiconductor devices. From here, the manufacture of the semiconductor device will be described.

As shown in FIG. 3 , the laser light 100 is irradiated along the grid-shaped planned dividing line 4L with the light-converging point aligned with the inside of the semiconductor wafer 4P before irradiation, and the modified region 41 is formed in the semiconductor wafer 4P before irradiation, thereby obtaining Semiconductor wafer 4. Examples of the pre-irradiation semiconductor wafer 4P include a silicon wafer, a silicon carbide wafer, a compound semiconductor wafer, and the like. As a compound semiconductor wafer, a gallium nitride wafer etc. are mentioned.

The irradiation conditions of the laser beam 100 can be appropriately adjusted within the range of the following conditions, for example. (A) Laser light 100 Laser light source Semiconductor laser excitation Nd:YAG laser wavelength 1064nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation mode Q-switched pulse repetition frequency below 100kHz Pulse width below 1μs Output power below 1mJ Laser quality TEM00 Polarization characteristics Linearly polarized light (B) Condensing lens magnification 100 times or less Numerical aperture (NA) 0.55 Transmittance to laser wavelength 100% or less (C) Mounted on which semiconductor wafer 4P before irradiation is mounted The moving speed of the table is less than 280mm/sec

As shown in FIG. 4 , the semiconductor wafer 4 includes a modified region 41 . The modified region 41 is more brittle than the other regions. The semiconductor wafer 4 also includes semiconductor wafers 4A, 4B, 4C, . . . , 4F.

As shown in FIG. 5 , the release liner 13 is removed from the tape 1, and the semiconductor wafer 4 heated by the heating stage is fixed to the semiconductor back surface protective film 11 of the sheet 71 with a roller. The fixing of the semiconductor wafer 4 is performed, for example, at a temperature of 40° C. or higher, preferably 45° C. or higher, more preferably 50° C. or higher, and further preferably 55° C. or higher. The fixing of the semiconductor wafer 4 is performed at a temperature of, for example, 100° C. or lower, preferably 90° C. or lower. The fixing pressure of the semiconductor wafer 4 is, for example, 1×10 ⁵ Pa to 1×10 ⁷ Pa. The roll speed is, for example, 10 mm/sec.

The second layer 112 of the semiconductor backside protective film 11 is adhered to the semiconductor wafer 4 by heating the sheet 71 with the semiconductor wafer 4 . Heating is performed, for example, at a temperature of 40°C or higher, preferably 60°C or higher. The upper limit of the heating temperature is, for example, 200°C. Heating is performed, for example, for 10 seconds or more. The upper limit of the heating time is, for example, 10 minutes.

The first layer 111 of the semiconductor back surface protective film 11 is irradiated with a laser through the dicing film 12 to mark the first layer 111 . As the laser, a gas laser, a solid laser, a liquid laser and the like can be used. The gas laser is, for example, a carbon dioxide gas laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser, etc.) and the like. The solid-state lasers are, for example, YAG lasers (Nd:YAG lasers, etc.) and YVO ₄ lasers.

As shown in FIG. 6 , the cutting film 12 is pushed up by the push-up tool 33 to expand the cutting film 12 . The expansion temperature is preferably 10°C or lower, and more preferably 0°C or lower. The lower limit of the temperature is, for example, -20°C.

By the expansion of the dicing film 12 , the semiconductor wafer 4 is divided from the modified region 41 as a starting point, and the semiconductor back surface protective film 11 is also divided. As a result, the semiconductor wafer 4A with the semiconductor back surface protective film 11A after division is formed on the dicing film 12 .

As shown in FIG. 7, the push-up tool 33 is lowered. As a result, slack occurs in the dicing film 12 . Relaxation occurs between the wafer holding area and the dicing ring holding area of the dicing film 12 .

As shown in FIG. 8 , the dicing film 12 is expanded by pushing up on the suction table 32 , and the dicing film 12 is sucked and fixed to the suction table 32 while maintaining the expansion.

As shown in FIG. 9 , the suction table 32 is lowered in a state where the dicing film 12 is sucked and fixed to the suction table 32 .

In a state where the dicing film 12 is sucked and fixed on the suction table 32 , hot air is blown to the slack portion of the dicing film 12 to remove the slack. The temperature of the hot air is preferably 170°C or higher, and more preferably 180°C or higher. The upper limit of the hot air temperature is, for example, 240°C, preferably 220°C.

The adhesive layer 122 is irradiated with ultraviolet rays to cure the adhesive layer 122 .

The semiconductor wafer 4A with the semiconductor back surface protective film 11A after division is peeled off from the dicing film 12 .

As shown in FIG. 10 , the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A is fixed to the adherend 6 by a flip-chip bonding method (flip-chip packaging method). Specifically, the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A is fixed to the adherend 6 so that the circuit surface of the semiconductor wafer 4A faces the adherend 6 . For example, the bumps 51 of the semiconductor wafer 4A are brought into contact with the conductive material (solder or the like) 61 of the adherend 6, and the conductive material 61 is melted while pressing. There is a gap between the semiconductor wafer 4A and the adherend 6 . The height of the voids is usually about 30 μm to about 300 μm. After fixing, cleaning of voids, etc. can be performed.

As the to-be-adhered body 6, a board|substrate, such as a lead frame and a circuit board (wiring circuit board etc.), can be used. It does not specifically limit as a material of such a board|substrate, A ceramic board|substrate and a plastic board|substrate are mentioned. As a plastic substrate, an epoxy substrate, a bismaleimide triazine substrate, a polyimide substrate, etc. are mentioned, for example.

The material of the bumps or the conductive material is not particularly limited, and examples thereof include tin-lead-based metal materials, tin-silver-based metal materials, tin-silver-copper-based metal materials, tin-zinc-based metal materials, tin - Solders (alloys) such as zinc-bismuth metal materials; gold metal materials; copper metal materials, etc. In addition, the temperature at the time of melting of the conductive material 61 is about 260 degreeC normally.

The gap between the semiconductor wafer 4A and the adherend 6 is sealed with a sealing resin. The sealing resin is usually cured by heating at 175° C. for 60 seconds to 90 seconds.

The sealing resin is not particularly limited as long as it is a resin having insulating properties (insulating resin). As the sealing resin, an insulating resin having elasticity is more preferable. As a sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Moreover, as a sealing resin based on the resin composition containing an epoxy resin, in addition to an epoxy resin, thermosetting resin (phenol resin etc.) other than an epoxy resin, a thermoplastic resin, etc. may be contained as a resin component. In addition, a phenol resin can also be used as a hardening|curing agent of an epoxy resin. The shape of the sealing resin is a film shape, a tablet shape, or the like.

The semiconductor device (flip-chip packaged semiconductor device) obtained by the above method includes the adherend 6 and the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A fixed to the adherend 6 .

Semiconductor devices packaged in flip chip packaging are thinner and smaller than semiconductor devices packaged in bond packaging. Therefore, it can be suitably used as various electronic devices and electronic components or their materials and members. Specifically, as electronic equipment using a flip-chip packaged semiconductor device, a so-called "mobile phone", a "PHS (Personal Handy-phone System)", a small computer (for example, a so-called "PDA" (portable information terminal), so-called "notebook computer", so-called "Net Book" (trademark), so-called "wearable computer", etc.), the integration of "mobile phone" and computer small electronic equipment, the so-called "Digital Camera (Trademark)", the so-called "digital video camera", the small television, the small game console, the small digital audio player, the so-called "electronic notepad", the so-called "Electronic dictionary", electronic equipment terminal for so-called "electronic book", mobile electronic equipment (portable electronic equipment) such as a small digital watch, etc. Of course, electronic equipment other than mobile type (installation type, etc.) may be used. Equipment (for example, so-called "desktop computers", thin TVs, electronic equipment for recording/playback (hard disk recorders, DVD players, etc.), projectors, microcomputers, etc.), etc. In addition, examples of electronic components or materials and components of electronic equipment and electronic components include components of a so-called "CPU", components of various storage devices (so-called "memory", hard disks, etc.).

Modification 1 As shown in FIG. 11 , the semiconductor back surface protective film 11 is a single layer. The preferable constituents of the semiconductor back surface protection film 11 are the same as those of the second layer 112 . The preferable content of the constituent components of the semiconductor back surface protection film 11 is the same as the preferable content of the constituent components of the second layer 112 .

Modification 2 The first portion 122A of the adhesive layer 122 has a property of being cured by energy rays. The second portion 122B of the adhesive layer 122 also has the property of being cured by energy rays. In Modification 2, after the step of forming the semiconductor wafer 4A with the divided semiconductor backside protective film 11A, the adhesive layer 122 is irradiated with energy rays, and the semiconductor wafer 4A with the divided semiconductor backside protective film 11A is picked up. Since the energy ray is irradiated, the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A is easily picked up.

Modification 3 The first portion 122A of the adhesive layer 122 is cured by energy rays. The second portion 122B of the adhesive layer 122 is also cured by energy rays.

Modification 4 The entire first main surface of the adhesive layer 122 is in contact with the semiconductor back surface protective film 11 .

(Others) Modifications 1 to 4 and the like can be combined arbitrarily.

As described above, the method for manufacturing a semiconductor device according to Embodiment 1 includes the steps of: fixing the semiconductor wafer 4 having the modified region 41 on the semiconductor back surface protective film 11 of the sheet 71; heating the sheet 71 with the semiconductor wafer 4 and a step of dividing the semiconductor wafer 4 with the modified region 41 as a starting point by expanding the dicing film 12 . The manufacturing method of the semiconductor device of Embodiment 1 further includes the step of peeling the semiconductor wafer 4A with the post-divided semiconductor back surface protective film 11A formed in the step of dividing the semiconductor wafer 4 from the dicing film 12 . Manufacture of the semiconductor device of the first embodiment between the step of fixing the semiconductor wafer 4 to the semiconductor backside protective film 11 of the sheet 71 and the step of peeling the semiconductor wafer 4A with the semiconductor backside protective film 11A after division from the dicing film 12 The method does not include the step of curing the semiconductor back surface protective film 11 . [Example]

Hereinafter, preferred embodiments of the present invention will be exemplarily described in detail. However, as long as there is no particular limitation on the materials, compounding amounts, and the like described in the examples, the scope of the present invention is not intended to be limited to these examples.

The raw materials and chemical reagents are shown below. Acrylate copolymer (manufactured by Nagase ChemteX Co., Ltd., SG-P3) Epoxy resin 1 (manufactured by Nippon Kayaku Co., Ltd., EPPN-501HY) Epoxy resin 2 (manufactured by Toto Chemical Co., Ltd., KI-3000-4) Epoxy resin 3 ( Manufactured by Mitsubishi Chemical Corporation, jER YL980) Phenolic resin (manufactured by Meiwa Chemical Co., Ltd., MEH7851-SS) Filler (manufactured by Yadoma Corporation, SO-25R, spherical silica with an average particle size of 0.5 μm) Dyestuff (ORIENT Chemical Industry Co., Ltd. Company made, OIL BLACK BS) catalyst (made by Shikoku Chemical Co., Ltd., CUREZOL 2PZ)

Production of the semiconductor backside protective film in Example 1 The solution of the resin composition was prepared according to Table 1, and the solution of the resin composition was coated on a release liner (Mitsubishi Plastics Corporation, DIAFOIL MRA50 (thickness after silicone release treatment was 50 μm polyethylene terephthalate film)) and dried to obtain a semiconductor backside protective film. Specifically, epoxy resin 3 (manufactured by Mitsubishi Chemical Co., Ltd., jER YL980) 20 parts by weight with respect to 100 parts by weight of solid content (solid content excluding solvent) of an acrylate copolymer (manufactured by Nagase ChemteX, Ltd., SG-P3) 50 parts by weight of epoxy resin (manufactured by Todo Chemical Co., Ltd., KI-3000-4), 75 parts by weight of phenol resin (manufactured by Meiwa Chemical Co., Ltd., MEH7851-SS), spherical silica (manufactured by Yadoma Co., Ltd., SO-25R, with an average particle size of 0.5 μm) 175 parts by weight, dye (manufactured by ORIENT Chemical Industry Co., Ltd., Oil BLACK BS) 15 parts by weight and catalyst (manufactured by Shikoku Chemical Co., Ltd., 2PZ) 7 parts by weight were dissolved in methyl ethyl ketone to prepare A solution of the resin composition having a solid content concentration of 23.6% by weight was obtained. The solution of resin composition was apply|coated to a release liner (Mitsubishi resin company, DIAFOIL MRA50). It dried at 130 degreeC for 2 minutes, and obtained the semiconductor back surface protective film.

Fabrication of semiconductor backside protective films in Examples 2 to 4 and Comparative Example 2 A laser marking layer and a die attach layer were prepared, and these were laminated using a laminator under the conditions of 100° C. and 0.6 MPa, thereby A semiconductor backside protective film was obtained. The laser marking layer was produced by preparing a solution of the resin composition with a solid content concentration of 23.6% by weight according to Table 1, applying the solution of the resin composition to a release liner (Mitsubishi Plastics Corporation, DIAFOIL MRA50), and at 130 wt %. Dry at °C for 2 minutes. The wafer mount layer is fabricated through the same steps as the laser marking layer.

Preparation of the semiconductor backside protective film in Comparative Example 1 According to Table 1, a solution of the resin composition with a solid content concentration of 23.6% by weight was prepared, and the solution of the resin composition was applied to a release liner (Mitsubishi Plastics Corporation, DIAFOIL MRA50), and It dried at 130 degreeC for 2 minutes, and obtained the semiconductor back surface protective film.

Preparation of dicing film 100 parts by weight of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") and 2-hydroxyethyl acrylate were placed in a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer and a stirring device. (Hereinafter, referred to as "HEA") 19 parts by weight, 0.4 parts by weight of benzyl peroxide, and 80 parts by weight of toluene were polymerized in a nitrogen stream at 60° C. for 10 hours to obtain an acrylic polymer A. To the acrylic polymer A, 12 parts by weight of 2-methacryloyloxyethyl isocyanate (hereinafter, referred to as "MOI") was added, and an addition reaction treatment was performed at 50° C. for 60 hours in an air stream , the acrylic polymer A' was obtained. Next, 2 parts by weight of a polyisocyanate compound (trade name "Coronate L", manufactured by Japan Polyurethane Corporation) and a photopolymerization initiator (Irgacure 369, Ciba Specialty Chemicals Co., Ltd.) 2 weight parts, toluene was added so that the solid content concentration might be 28%, and a binder solution was obtained. The adhesive solution was applied to the silicone-treated surface of the PET release liner, and heated and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Next, a polypropylene film having a thickness of 40 μm was bonded to the exposed surface of the adhesive layer, and it was stored at 23° C. for 72 hours to obtain a dicing film.

Production of a dicing film-integrated semiconductor backside protective film The semiconductor backside protective film was laminated on the adhesive layer of the dicing film by using a manual roller to obtain a dicing film-integrated semiconductor backside protective film.

Structures of the dicing film-integrated semiconductor backside protective films in Example 1 and Comparative Example 1 The structures of the dicing film-integrated semiconductor backside protective films in Example 1 and Comparative Example 1 were the same as those shown in FIG. 11 . The dicing film-integrated semiconductor back surface protective film of Example 1 and Comparative Example 1 includes a dicing film and a semiconductor back surface protective film located on the adhesive layer of the dicing film. The dicing film contains a polypropylene film and an adhesive layer.

Structures of the dicing film-integrated semiconductor backside protective films in Examples 2 to 4 and Comparative Example 2 The structures of the dicing film-integrated semiconductor backside protective films in Examples 2 to 4 and Comparative Example 2 are the same as those shown in FIG. 2 . The structure is the same. The dicing film-integrated semiconductor back surface protective films of Examples 2 to 4 and Comparative Example 2 include a dicing film and a semiconductor back surface protective film located on the adhesive layer of the dicing film. The dicing film contains a polypropylene film and an adhesive layer. The semiconductor backside protective film includes a laser marking layer and a wafer mounting layer. The laser marking layer corresponds to the first layer 111 in FIG. 2 . The wafer patch layer is equivalent to the second layer 112 in FIG. 2 .

Measurement of heat generation of semiconductor back surface protective film The semiconductor back surface protective film of the dicing film-integrated semiconductor back surface protective film was peeled off, and a sample was cut out from the semiconductor back surface protective film. In Examples 2 to 4 and Comparative Example 2, the samples were cut out so that the weight ratio of the laser marking layer to the die attach layer did not change before and after cutting. Using a differential scanning calorimeter DSC Q2000 (manufactured by TA Instruments), the DSC measurement was performed under the conditions of a nitrogen atmosphere, a temperature range of -20°C to 300°C, and a temperature increase rate of 10°C/min. In the DSC chart, a base line was drawn for an exothermic peak appearing in the range of 50°C to 300°C, and the exothermic heat (J/g) was calculated (refer to FIG. 12 ).

Measurement of silicon wafer peeling force A test piece with a length of 150 mm and a width of 10 mm was cut out from the semiconductor backside protective film, and an adhesive tape (BT manufactured by Nitto Denko Co., Ltd.) was attached to one side of the test piece with a manual roller, and the test piece was tested with a 2 kg roller. The other side of the wafer is attached to a mirror-surface silicon wafer heated to 70°C. The peeling load (N/10mm) at the time of peeling the test piece together with the adhesive tape from the silicon wafer at 180° was measured by Autograph (manufactured by Shimadzu Corporation). The average value of peeling load was calculated|required using the measured value of the 100-mm part excluding the starting end 25 mm part and the terminal 25 mm part among the measured values.

Measurement of Dicing Film Peeling Force A test piece having a length of 100 mm and a width of 20 mm was cut out from the dicing film-integrated semiconductor back surface protective film. This test piece includes a dicing film and a semiconductor backside protective film on the dicing film. An adhesive tape (BT manufactured by Nitto Denko Co., Ltd.) was bonded to the semiconductor back surface protective film of the test piece by a manual roller, and the adhesive layer was irradiated with ultraviolet rays of ^{300 mJ/cm 2 through the polypropylene film of the dicing film.} The peeling load for peeling a semiconductor back surface protective film from a dicing film was calculated|required by the tensile test using Autograph (made by Shimadzu Corporation). The average value of peeling load was calculated|required using the measured value of the 60-mm part excluding the starting end 20 mm part and the end 20 mm part among the measured values.

Evaluation of Mountability Silicon wafer) is attached to the semiconductor backside protective film. The silicon wafer peeling force was measured, and the peeling force of 5N/10mm or more was judged as ○, the peeling force of 3N/10mm or more and less than 5N/10mm was judged as △, and the peeling force of less than 3N/10mm was judged as ×.

Evaluation of reflow resistance printing property A semiconductor backside protective film in which a silicon wafer was bonded to a dicing film-integrated semiconductor backside protective film by roll bonding at 70°C (in Examples 2 to 4 and Comparative Example 2, the round patch layer). Using MD-S9910 (manufactured by KEYENCE Corporation), under the conditions of a laser power of 0.23 W, a marking speed of 300 mm/sec, and a frequency of 10 kHz, the semiconductor backside protective film (in Examples 2 to 4 and Comparative Examples) was applied through the dicing film. 2 is the laser marking layer) irradiates the printing laser. The adhesive layer was irradiated ^{with ultraviolet rays of 300 mJ/cm 2} through the polypropylene film of the dicing film, and the dicing film was peeled off. Using a reflow soldering device (TAP30-407PM, manufactured by Tamura Corporation), reflow soldering was performed three times at a peak temperature of 260°C corresponding to PIC/JEDEC-J-STD-020, and an optical microscope (manufactured by KEYENCE Corporation, VHX- 5600) to observe the appearance of printing before and after reflow. The case where the print appearance changed significantly during reflow and became unclear was marked as ×, the case where the print appearance changed during reflow and the visibility deteriorated was marked as △, and the print was maintained before and after reflow. The case of the appearance was marked with ○.

[Table 1]

When the heat radiation of the semiconductor back surface protective film was 40 J/g or less, printing was not damaged during reflow (see Examples 1 to 4). On the other hand, when the amount of heat generated by the semiconductor back surface protective film was 60 J/g, printing was broken during reflow (see Comparative Example 2).

By constituting the semiconductor backside protective film with the laser marking layer and the wafer bonding layer, both the print reflow resistance and the bonding properties are achieved (see Examples 2 to 3).

1‧‧‧Tape 4‧‧‧Semiconductor Wafer 4A, 4B, 4C, 4D, 4E, 4F‧‧‧Semiconductor Chip 4L‧‧‧Separation Schedule 4P‧‧‧Semiconductor Wafer 6‧‧‧Adhesion 11 ‧‧‧Semiconductor back protective film 11A‧‧‧Semiconductor back protective film after division 12‧‧‧Dicing film 13‧‧‧Release liner 32‧‧‧Suction table 33‧‧‧Push-up tool 41‧‧‧modification Area 51‧‧‧Bumps 61‧‧‧Conductive materials 71, 71a, 71b, 71c, ..., 71m‧‧‧Slices 100‧‧‧Laser light 111‧‧‧First layer 112‧‧‧Second layer 121 ‧‧‧Substrate layer 122‧‧‧Adhesive layer 122A‧‧‧First part 122B‧‧‧Second part

FIG. 1 is a schematic plan view of an adhesive tape in Embodiment 1. FIG. 2 is a partial schematic cross-sectional view of the adhesive tape in Embodiment 1. FIG. 3 is a schematic perspective view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 4 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 5 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 6 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 7 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 8 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 9 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 10 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in Embodiment 1. FIG. 11 is a schematic cross-sectional view of a sheet in Modification 1. FIG. 12 is a DSC chart of the semiconductor back surface protective film in Example 2. FIG.

1‧‧‧Tape

13‧‧‧Release liner

71a, 71b, 71c, ......, 71m‧‧‧ pieces

Claims (5)

A sheet comprising: a dicing film comprising a substrate layer and an adhesive layer on the substrate layer; and a semiconductor backside protective film on the adhesive layer; and differential scanning of the semiconductor backside protective film In the differential scanning calorimetry curve measured by thermal analysis, the heat release amount of the exothermic peak that appears in the range of 50°C to 300°C is 40 J/g or less, and the semiconductor backside protective film includes a first layer, and the first layer is A cured layer, the semiconductor backside protective film further includes a second layer, and the second layer does not contain a thermal curing accelerating catalyst. The sheet according to claim 1, wherein in the differential scanning calorimetry curve measured by the differential scanning calorimetry of the first layer, the exothermic peak that appears in the range of 50°C to 300°C has a heat release of 40 J/ g or less. The sheet of claim 1, wherein the first layer is located between the adhesive layer and the second layer. An adhesive tape comprising: a release liner; and the sheet according to any one of claims 1 to 3 on the release liner. A method of manufacturing a semiconductor device, comprising: in the sheet according to any one of items 1 to 3 of the scope of application A step of fixing a semiconductor wafer having a modified region on a semiconductor backside protective film; and a step of dividing the semiconductor wafer with the modified region as a starting point by expanding the dicing film.

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