TWI747844B - 電漿蝕刻方法 - Google Patents

電漿蝕刻方法 Download PDF

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Publication number
TWI747844B
TWI747844B TW105131838A TW105131838A TWI747844B TW I747844 B TWI747844 B TW I747844B TW 105131838 A TW105131838 A TW 105131838A TW 105131838 A TW105131838 A TW 105131838A TW I747844 B TWI747844 B TW I747844B
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TW
Taiwan
Prior art keywords
electromagnets
plasma
etching rate
coil
current supplied
Prior art date
Application number
TW105131838A
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English (en)
Chinese (zh)
Other versions
TW201724255A (zh
Inventor
橫田聰裕
檜森慎司
大下辰郎
草野周
伊藤悅治
永關一也
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201724255A publication Critical patent/TW201724255A/zh
Application granted granted Critical
Publication of TWI747844B publication Critical patent/TWI747844B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/6514—
    • H10P50/267—
    • H10P50/283—
    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW105131838A 2015-10-09 2016-10-03 電漿蝕刻方法 TWI747844B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015200877A JP6516649B2 (ja) 2015-10-09 2015-10-09 プラズマエッチング方法
JP2015-200877 2015-10-09

Publications (2)

Publication Number Publication Date
TW201724255A TW201724255A (zh) 2017-07-01
TWI747844B true TWI747844B (zh) 2021-12-01

Family

ID=58499854

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105131838A TWI747844B (zh) 2015-10-09 2016-10-03 電漿蝕刻方法
TW110140547A TWI795972B (zh) 2015-10-09 2016-10-03 電漿蝕刻裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110140547A TWI795972B (zh) 2015-10-09 2016-10-03 電漿蝕刻裝置

Country Status (4)

Country Link
US (1) US9978566B2 (enExample)
JP (1) JP6516649B2 (enExample)
KR (3) KR102630512B1 (enExample)
TW (2) TWI747844B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516649B2 (ja) * 2015-10-09 2019-05-22 東京エレクトロン株式会社 プラズマエッチング方法
CN108165927B (zh) * 2018-01-03 2020-03-31 京东方科技集团股份有限公司 掩膜版的吸附装置及吸附方法、蒸镀设备及蒸镀方法
US12020898B2 (en) 2019-09-09 2024-06-25 Tokyo Electron Limited Plasma processing system and method of processing substrate
JP2021125504A (ja) * 2020-02-03 2021-08-30 株式会社アルバック プラズマエッチング方法及びプラズマエッチング装置
US12332625B2 (en) * 2020-09-21 2025-06-17 Changxin Memory Technologies, Inc. Method and apparatus for correcting position of wafer and storage medium
WO2022108755A1 (en) * 2020-11-20 2022-05-27 Lam Research Corporation Plasma uniformity control using a pulsed magnetic field
JP7727714B2 (ja) 2021-03-23 2025-08-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7685973B2 (ja) * 2022-05-25 2025-05-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140346040A1 (en) * 2012-01-18 2014-11-27 Tokyo Electron Limited Substrate processing apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932488A (en) * 1996-02-09 1999-08-03 Citizen Watch Co., Ltd. Method of dry etching
US6573190B1 (en) * 1998-11-26 2003-06-03 Hitachi, Ltd. Dry etching device and dry etching method
KR100519676B1 (ko) * 2003-12-23 2005-10-13 어댑티브프라즈마테크놀로지 주식회사 플라즈마소스코일을 갖는 플라즈마챔버 세팅방법
JP4601439B2 (ja) * 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20090250432A1 (en) * 2008-04-07 2009-10-08 Hoffman Daniel J Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6008771B2 (ja) * 2013-01-21 2016-10-19 東京エレクトロン株式会社 多層膜をエッチングする方法
JP5650281B2 (ja) * 2013-06-15 2015-01-07 東京エレクトロン株式会社 プラズマ処理方法、及びプラズマ処理装置
JP6317139B2 (ja) * 2014-03-04 2018-04-25 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置
JP6516649B2 (ja) 2015-10-09 2019-05-22 東京エレクトロン株式会社 プラズマエッチング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140346040A1 (en) * 2012-01-18 2014-11-27 Tokyo Electron Limited Substrate processing apparatus

Also Published As

Publication number Publication date
TW201724255A (zh) 2017-07-01
KR102630512B1 (ko) 2024-01-26
KR20240014096A (ko) 2024-01-31
KR102775464B1 (ko) 2025-02-28
JP2017073518A (ja) 2017-04-13
TW202209484A (zh) 2022-03-01
US9978566B2 (en) 2018-05-22
JP6516649B2 (ja) 2019-05-22
TWI795972B (zh) 2023-03-11
KR20240014562A (ko) 2024-02-01
KR20170042489A (ko) 2017-04-19
KR102775465B1 (ko) 2025-02-28
US20170103877A1 (en) 2017-04-13

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