KR102630512B1 - 플라즈마 에칭 방법 - Google Patents

플라즈마 에칭 방법 Download PDF

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KR102630512B1
KR102630512B1 KR1020160129760A KR20160129760A KR102630512B1 KR 102630512 B1 KR102630512 B1 KR 102630512B1 KR 1020160129760 A KR1020160129760 A KR 1020160129760A KR 20160129760 A KR20160129760 A KR 20160129760A KR 102630512 B1 KR102630512 B1 KR 102630512B1
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South Korea
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electromagnets
plasma
etching
coil
etching rate
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Korean (ko)
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KR20170042489A (ko
Inventor
아키히로 요코타
신지 히모리
다츠로 오시타
슈 구사노
에츠지 이토
가즈야 나가세키
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도쿄엘렉트론가부시키가이샤
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Publication of KR20170042489A publication Critical patent/KR20170042489A/ko
Priority to KR1020240009580A priority Critical patent/KR102775465B1/ko
Priority to KR1020240009581A priority patent/KR102775464B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020160129760A 2015-10-09 2016-10-07 플라즈마 에칭 방법 Active KR102630512B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020240009580A KR102775465B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법
KR1020240009581A KR102775464B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-200877 2015-10-09
JP2015200877A JP6516649B2 (ja) 2015-10-09 2015-10-09 プラズマエッチング方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020240009581A Division KR102775464B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법
KR1020240009580A Division KR102775465B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법

Publications (2)

Publication Number Publication Date
KR20170042489A KR20170042489A (ko) 2017-04-19
KR102630512B1 true KR102630512B1 (ko) 2024-01-26

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KR1020160129760A Active KR102630512B1 (ko) 2015-10-09 2016-10-07 플라즈마 에칭 방법
KR1020240009580A Active KR102775465B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법
KR1020240009581A Active KR102775464B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법

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KR1020240009580A Active KR102775465B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법
KR1020240009581A Active KR102775464B1 (ko) 2015-10-09 2024-01-22 플라즈마 에칭 방법

Country Status (4)

Country Link
US (1) US9978566B2 (enExample)
JP (1) JP6516649B2 (enExample)
KR (3) KR102630512B1 (enExample)
TW (2) TWI747844B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516649B2 (ja) * 2015-10-09 2019-05-22 東京エレクトロン株式会社 プラズマエッチング方法
CN108165927B (zh) * 2018-01-03 2020-03-31 京东方科技集团股份有限公司 掩膜版的吸附装置及吸附方法、蒸镀设备及蒸镀方法
US12020898B2 (en) 2019-09-09 2024-06-25 Tokyo Electron Limited Plasma processing system and method of processing substrate
JP2021125504A (ja) * 2020-02-03 2021-08-30 株式会社アルバック プラズマエッチング方法及びプラズマエッチング装置
US12332625B2 (en) * 2020-09-21 2025-06-17 Changxin Memory Technologies, Inc. Method and apparatus for correcting position of wafer and storage medium
US20230223242A1 (en) * 2020-11-20 2023-07-13 Lam Research Corporation Plasma uniformity control using a pulsed magnetic field
WO2022202551A1 (ja) 2021-03-23 2022-09-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7685973B2 (ja) * 2022-05-25 2025-05-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090250432A1 (en) * 2008-04-07 2009-10-08 Hoffman Daniel J Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields
US20140346040A1 (en) 2012-01-18 2014-11-27 Tokyo Electron Limited Substrate processing apparatus
JP2017073518A (ja) 2015-10-09 2017-04-13 東京エレクトロン株式会社 プラズマエッチング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932488A (en) * 1996-02-09 1999-08-03 Citizen Watch Co., Ltd. Method of dry etching
WO2000031787A1 (en) * 1998-11-26 2000-06-02 Hitachi, Ltd. Dry etching device and dry etching method
KR100519676B1 (ko) * 2003-12-23 2005-10-13 어댑티브프라즈마테크놀로지 주식회사 플라즈마소스코일을 갖는 플라즈마챔버 세팅방법
JP4601439B2 (ja) * 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6008771B2 (ja) * 2013-01-21 2016-10-19 東京エレクトロン株式会社 多層膜をエッチングする方法
JP5650281B2 (ja) * 2013-06-15 2015-01-07 東京エレクトロン株式会社 プラズマ処理方法、及びプラズマ処理装置
JP6317139B2 (ja) * 2014-03-04 2018-04-25 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090250432A1 (en) * 2008-04-07 2009-10-08 Hoffman Daniel J Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields
US20140346040A1 (en) 2012-01-18 2014-11-27 Tokyo Electron Limited Substrate processing apparatus
JP2017073518A (ja) 2015-10-09 2017-04-13 東京エレクトロン株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
US20170103877A1 (en) 2017-04-13
KR20170042489A (ko) 2017-04-19
KR102775464B1 (ko) 2025-02-28
JP6516649B2 (ja) 2019-05-22
KR20240014562A (ko) 2024-02-01
KR20240014096A (ko) 2024-01-31
TW202209484A (zh) 2022-03-01
KR102775465B1 (ko) 2025-02-28
TWI795972B (zh) 2023-03-11
TW201724255A (zh) 2017-07-01
JP2017073518A (ja) 2017-04-13
TWI747844B (zh) 2021-12-01
US9978566B2 (en) 2018-05-22

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