TWI747780B - 長晶爐 - Google Patents

長晶爐 Download PDF

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Publication number
TWI747780B
TWI747780B TW110113712A TW110113712A TWI747780B TW I747780 B TWI747780 B TW I747780B TW 110113712 A TW110113712 A TW 110113712A TW 110113712 A TW110113712 A TW 110113712A TW I747780 B TWI747780 B TW I747780B
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TW
Taiwan
Prior art keywords
air
air inlet
crystal growth
point
growth furnace
Prior art date
Application number
TW110113712A
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English (en)
Chinese (zh)
Other versions
TW202242212A (zh
Inventor
廖思涵
Original Assignee
環球晶圓股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 環球晶圓股份有限公司 filed Critical 環球晶圓股份有限公司
Priority to TW110113712A priority Critical patent/TWI747780B/zh
Application granted granted Critical
Publication of TWI747780B publication Critical patent/TWI747780B/zh
Priority to CN202210197342.1A priority patent/CN115216832A/zh
Priority to JP2022033775A priority patent/JP7470143B2/ja
Publication of TW202242212A publication Critical patent/TW202242212A/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW110113712A 2021-04-16 2021-04-16 長晶爐 TWI747780B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW110113712A TWI747780B (zh) 2021-04-16 2021-04-16 長晶爐
CN202210197342.1A CN115216832A (zh) 2021-04-16 2022-03-02 长晶炉
JP2022033775A JP7470143B2 (ja) 2021-04-16 2022-03-04 結晶成長炉

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW110113712A TWI747780B (zh) 2021-04-16 2021-04-16 長晶爐

Publications (2)

Publication Number Publication Date
TWI747780B true TWI747780B (zh) 2021-11-21
TW202242212A TW202242212A (zh) 2022-11-01

Family

ID=79907808

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110113712A TWI747780B (zh) 2021-04-16 2021-04-16 長晶爐

Country Status (3)

Country Link
JP (1) JP7470143B2 (ja)
CN (1) CN115216832A (ja)
TW (1) TWI747780B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115233291A (zh) * 2022-06-29 2022-10-25 徐州鑫晶半导体科技有限公司 导流组件和具有其的长晶炉、长晶方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116988157B (zh) * 2023-09-26 2023-12-05 山西第三代半导体技术创新中心有限公司 一种降低晶体生长孔洞碳化硅籽晶粘接炉

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM473400U (zh) * 2013-11-15 2014-03-01 Eversol Corp 長晶爐之排氣機構
CN211771651U (zh) * 2020-03-24 2020-10-27 扬州合晶科技有限公司 一种长晶炉排气管结构

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH092892A (ja) * 1995-06-22 1997-01-07 Komatsu Electron Metals Co Ltd 半導体単結晶引き上げ装置
US8926751B2 (en) * 2010-12-02 2015-01-06 National Central University Gas flow guiding device for use in crystal-growing furnace
CN203007469U (zh) * 2012-11-19 2013-06-19 西安隆基硅材料股份有限公司 直拉单晶炉热场装置
KR20150082853A (ko) * 2014-01-08 2015-07-16 삼성전자주식회사 수직로
JP2019075517A (ja) 2017-10-19 2019-05-16 東京エレクトロン株式会社 処理装置及び拡散路を有する部材
CN112191121B (zh) * 2020-09-22 2022-09-30 南京晶升装备股份有限公司 一种长晶炉工艺气混气气道

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM473400U (zh) * 2013-11-15 2014-03-01 Eversol Corp 長晶爐之排氣機構
CN211771651U (zh) * 2020-03-24 2020-10-27 扬州合晶科技有限公司 一种长晶炉排气管结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115233291A (zh) * 2022-06-29 2022-10-25 徐州鑫晶半导体科技有限公司 导流组件和具有其的长晶炉、长晶方法
CN115233291B (zh) * 2022-06-29 2023-08-04 中环领先(徐州)半导体材料有限公司 导流组件和具有其的长晶炉、长晶方法

Also Published As

Publication number Publication date
CN115216832A (zh) 2022-10-21
TW202242212A (zh) 2022-11-01
JP2022164566A (ja) 2022-10-27
JP7470143B2 (ja) 2024-04-17

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