CN115233291B - 导流组件和具有其的长晶炉、长晶方法 - Google Patents
导流组件和具有其的长晶炉、长晶方法 Download PDFInfo
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- CN115233291B CN115233291B CN202210765481.XA CN202210765481A CN115233291B CN 115233291 B CN115233291 B CN 115233291B CN 202210765481 A CN202210765481 A CN 202210765481A CN 115233291 B CN115233291 B CN 115233291B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202210765481.XA CN115233291B (zh) | 2022-06-29 | 2022-06-29 | 导流组件和具有其的长晶炉、长晶方法 |
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CN202210765481.XA CN115233291B (zh) | 2022-06-29 | 2022-06-29 | 导流组件和具有其的长晶炉、长晶方法 |
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CN115233291A CN115233291A (zh) | 2022-10-25 |
CN115233291B true CN115233291B (zh) | 2023-08-04 |
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CN202210765481.XA Active CN115233291B (zh) | 2022-06-29 | 2022-06-29 | 导流组件和具有其的长晶炉、长晶方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
KR20030055900A (ko) * | 2001-12-27 | 2003-07-04 | 주식회사 실트론 | 단결정 잉곳의 제조장치 |
CN112144106A (zh) * | 2020-09-28 | 2020-12-29 | 上海新昇半导体科技有限公司 | 单晶生长设备及生长方法 |
CN212610982U (zh) * | 2020-05-25 | 2021-02-26 | 广东先导先进材料股份有限公司 | 一种单晶炉 |
CN214736204U (zh) * | 2021-03-02 | 2021-11-16 | 江苏协鑫硅材料科技发展有限公司 | 导流筒及导流组件 |
TWI747780B (zh) * | 2021-04-16 | 2021-11-21 | 環球晶圓股份有限公司 | 長晶爐 |
-
2022
- 2022-06-29 CN CN202210765481.XA patent/CN115233291B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
KR20030055900A (ko) * | 2001-12-27 | 2003-07-04 | 주식회사 실트론 | 단결정 잉곳의 제조장치 |
CN212610982U (zh) * | 2020-05-25 | 2021-02-26 | 广东先导先进材料股份有限公司 | 一种单晶炉 |
CN112144106A (zh) * | 2020-09-28 | 2020-12-29 | 上海新昇半导体科技有限公司 | 单晶生长设备及生长方法 |
CN214736204U (zh) * | 2021-03-02 | 2021-11-16 | 江苏协鑫硅材料科技发展有限公司 | 导流筒及导流组件 |
TWI747780B (zh) * | 2021-04-16 | 2021-11-21 | 環球晶圓股份有限公司 | 長晶爐 |
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Publication number | Publication date |
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CN115233291A (zh) | 2022-10-25 |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230703 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Applicant after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |
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