TWI746834B - 可動體構造及成膜裝置 - Google Patents

可動體構造及成膜裝置 Download PDF

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TWI746834B
TWI746834B TW107111580A TW107111580A TWI746834B TW I746834 B TWI746834 B TW I746834B TW 107111580 A TW107111580 A TW 107111580A TW 107111580 A TW107111580 A TW 107111580A TW I746834 B TWI746834 B TW I746834B
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TW201842212A (zh
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中川西學
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日商東京威力科創股份有限公司
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Abstract

提供一種可精度良好地測量旋轉體之溫度的可動體構造。
一實施形態之可動體構造係具備有：處理容器，係構成為可在真空環境下進行處理；固定部，係配置於該處理容器內；可動部，係設置為可相對於該固定部來加以移動；收發模組，係設置於該固定部，並具有氣密密封構造；以及感應器模組，係設置於該可動部，並具有氣密密封構造；該收發模組與該感應器模組係以非接觸來進行訊號的收發。

Description

可動體構造及成膜裝置
本發明係關於一種可動體構造及成膜裝置。
自以往，測量旋轉體之溫度的方法係已知一種將熱電偶安裝於旋轉體，而透過滑環來將熱電偶的訊號傳遞至固定體的方法(例如，參照專利文獻1)。
【先前技術文獻】
【專利文獻】
專利文獻1：日本實開平5-6832號公報
然而，在透過滑環來傳遞熱電偶的訊號之情況，於旋轉體與固定體之間產生溫度差時，便會因熱電勢的差異而產生測量誤差。因此，便無法精度良好地測量旋轉體之溫度。
本發明係有鑑於上述而完成者，其目的在於提供一種可精度良好地測量旋轉體之溫度的可動體構造。
為達上述目的，本發明一態樣相關之可動體構造係具備有：處理容器，係構成為可在真空環境下進行處理；固定部，係配置於該處理容器內；可動部，係設置為可相對於該固定部來加以移動；收發模組，係設置於該固定部，並具有氣密密封構造；以及感應器模組，係設置於該可動部，並具有氣密密封構造；該收發模組與該感應器模組係以非接觸來進行訊號的收發。
根據揭露之可動體構造，便可精度良好地測量旋轉體之溫度。
1‧‧‧處理容器
2‧‧‧載置台
21‧‧‧感應器模組(雙重真空管構造)
22‧‧‧溫度感應器
23‧‧‧電路基板
24‧‧‧線圈
25‧‧‧鐵芯
26‧‧‧外裝體
3‧‧‧靜電夾具
3a‧‧‧介電體膜
3b‧‧‧電極
5‧‧‧冷卻機構
5a‧‧‧冷凍機
5b‧‧‧冷凍導熱體
51‧‧‧收發模組
12‧‧‧靶材
W‧‧‧基板
圖1係顯示本發明實施形態相關之成膜裝置一範例的概略剖面圖。
圖2係顯示本發明實施形態相關之可動體構造的第1構成例的概略剖面圖。
圖3係顯示感應器模組一範例的圖式。
圖4係顯示本發明實施形態相關之可動體構造的第2構成例的概略剖面圖。
圖5係顯示本發明實施形態相關之可動體構造的第3構成例的概略剖面圖。
以下，便參照圖式就用以實施本發明之形態來加以說明。另外，本說明書及圖式中係就實質上相同之構成附加相同符號並省略重複之說明。
首先，便就本發明實施形態相關之可動體構造可適用的成膜裝置來加以說明。以下，成膜裝置一範例係舉能在構成為可在極低溫下(例如50克耳文(K)以下)且超高真空環境下(例如10-9Pa以下)進行處理的處理容器內，對基板形成既定膜之PVD(Physical Vapor Deposition)裝置為範例來加以說明。PVD裝置係可在形成例如HDD(Hard Disk Drive)的讀取頭部、MRAM(Magnetoresistive Random Access Memory)等所使用的磁性膜時，適當地加以使用。
圖1係顯示本發明實施形態相關之成膜裝置一範例的概略剖面圖。
如圖1所示，成膜裝置係具有處理容器1。處理容器1內係配置有：構成為可旋轉的載置台2；以及固定於載置台2的靜電夾具3。靜電夾具3上係載置有半導體晶圓等的基板W。基板W會藉由未圖示之搬送機構，透過閘閥GV來在互相連接的處理容器1與搬送室4之間被加以搬送。
處理容器1係具備有：位於下部之底板1a；圍繞底板1a外周之筒狀部1b；以及設置於筒狀部1b上部，以密封筒狀部1b的頂板1c。另外，底板1a與筒狀部1b可為一體構造，筒狀部1b與頂板1c可為一體構造。
頂板1c係固定有靶材保持器13。靶材保持器13係固定有爪構件14。會藉由將靶材12周緣部被夾置於靶材保持器13與爪構件14之間，來將靶材12保持於靶材保持器13。
另外，雖靶材保持器13為導電體，但在與頂板1c之間係介設有絕緣體，而施有來自電漿產生用電源15的電壓。包含頂板1c的處理容器1之電位係大地電位，另一方面，靶材保持器13及靶材12係施有來自電漿產生用電源15之高頻電位。
電漿產生用電源15係被使用於為了在處理容器1內產生電漿，來將稀有氣體等離子化，藉由離子化之稀有氣體元素等來將靶材12濺鍍。又，為了產生電漿，而在處理容器1內部填充有氬(Ar)、氪(Kr)、氖(Ne)等的稀有氣體或氮氣(N2)。
電漿產生用電源15係具備有高頻等的交流電源15a及匹配器15b。電漿產生用電源15會將交流電壓施加至靶材12與大地電位之間。在從電漿產生用電源15來將交流電壓施加至靶材12時，便會在靶材12附近產生電漿，而濺鍍靶材12，以使濺鍍後之原子或分子沉積於靶材12所對向的基板W表面上。例如，在沉積磁性膜(包含Ni、Fe、Co等的強磁性體的膜)之情況，靶材12之材料可使用例如CoFe、FeNi、NiFeCo。又，亦可將其他元素混入至該等材料來做為靶材材料。
又，電漿產生用電源15亦可相對於交流電源15而並列地具備直流電源15c。藉由直流電源15c，便可改變施加至靶材12之電位的振幅中心電位。雖電漿產生一般會使用13.56MHz等的高頻，但亦可使用其他頻率(包含直流電源)。另外，亦可在靶材12附近配置磁鐵，而在靶材12表面施加磁場，來進行磁性濺鍍。
靜電夾具3係具備有介電體膜3a以及電極3b。電極3b會被埋設於介電體膜3a內。藉由從未圖示之直流電源透過配線L1來對電極3b施有既定電位，便可將基板W固定於靜電夾具3。配線L1與將電力供給至配線L1的直流電源會透過滑環16來電性連接。藉此，配線L1便可與靜電夾具3一同地旋轉。又，靜電夾具3係可設置有將氦(He)等的冷卻氣體(熱傳導氣體)供給至與基板W的界面之通路。
處理容器1會連通於真空泵10。藉由以真空泵10來將處理容器1內部之氣體排氣，便可將處理容器1內之壓力減壓至可產生電漿之程度。亦即，處理容器1係構成為可在真空環境下進行處理。
載置台2下方係透過載置台2的下面2a與間隙G1來設置有冷卻機構5。載置台2會藉由冷卻機構5來被冷卻至例如50K以下的溫度區域之極低溫。藉此，載置台2所載置之基板W亦會被冷卻至50K以下的極低溫。在利用濺鍍之磁性膜的形成中，係可藉由極低溫形成來控制結晶粒徑、膜應力等的薄膜特性。
載置台2的下面2a係透過冷卻機構5外周面與間隙G2來固定有以覆蓋冷卻機構5外周面的方式所設置，並延伸於上下方向的旋轉部17。旋轉部17會連接於直驅馬達等的驅動機構18。驅動機構18可讓旋轉部17旋轉，藉此，便可使固定於旋轉部17之載置台2以載置台2的中心軸C為旋轉中心來加以旋轉。又，旋轉部17與其周圍之間係設置有磁性流體密封部19，旋轉部17係構成為可在維持氣密性的狀態下來加以旋轉。
接著，便就本發明實施形態相關之可動體構造的第1構成例來加以說明。圖2係顯示本發明實施形態相關之可動體構造的第1構成例的概略剖面圖。
如圖2所示，可動體構造係具備有：處理容器1；冷卻機構5；載置台2；收發模組51；以及感應器模組21。
處理容器1係構成為可在極低溫下，且真空環境下進行處理。
冷卻機構5係具有冷凍機5a以及冷凍導熱體5b。冷凍導熱體5b會被設置於冷凍機5a上，其上部會被配置於處理容器1內。冷凍導熱體5b會藉由例如銅(Cu)等的高熱傳導率之材料來加以形成，並具有略圓柱形狀。又，冷凍導熱體5b會配置為使其中心一致於載置台2的中心軸C。載置台2的下面2a與冷凍導熱體5b上面的間隙G1係具有作為供給有例如He等的冷卻氣體(熱傳導氣體)的冷卻氣體通路之機能。然後，冷凍機5a會透過冷凍導熱體5b以及供給至冷卻氣體通路之冷卻氣體來冷卻載置台2。
載置台2係設置為可相對於冷凍導熱體5b來加以旋轉。
收發模組51係設置於冷凍導熱體5b。收發模組51係連接有配線L2，並 透過配線L2來在與處理容器1外部之間收發感應器訊號、電力訊號等的各種訊號。配線L2會從收發模組51內部透過例如極細線徑的氣密密封部來被拉出至外部。收發模組51會構成為可以非接觸(無線)來與感應器模組21收發感應器訊號、電力訊號等的各種訊號。收發模組51係具有藉由高頻、共振、微波等來收發各種訊號的線圈。具體而言，收發模組51會透過線圈以非接觸來取得感應器模組21之溫度感應器22所測量出的溫度。又，收發模組51會透過線圈，以非接觸來對感應器模組21供給電力訊號。收發模組51係具有將構成收發模組51之線圈等的構件成為一體而真空密封的氣密密封構造。
感應器模組21會設置於載置台2。感應器模組21係構成為以非接觸來與收發模組51收發感應器訊號、電力訊號等的各種訊號。圖3係顯示感應器模組21一範例的圖式。如圖3所示，感應器模組21係具有溫度感應器22、電路基板23、線圈24、鐵芯25以及外裝體26的雙重真空管構造。溫度感應器22係測量載置台2之溫度的感應器，可為例如二極體感應器、熱電偶。電路基板23係包含用以收發各種訊號之電路及電容器(電容)等的組件，並與溫度感應器22電性連接。線圈24係在與收發模組51之線圈之間，藉由高頻、共振、微波等來進行各種訊號之收發者，並會與電路基板23電性連接。線圈24及鐵芯25會將以例如溫度感應器22所測量出之感應器訊號傳送至收發模組51，或是接收從收發模組51之線圈所供給的電力訊號。外裝體26係藉由不會抑制電磁感應作用的非金屬，例如玻璃等所構成。又，感應器模組21係具有藉由外裝體26來將構成感應器模組21之溫度感應器22、電路基板23、線圈24及鐵芯25等的構件成為一體而真空密封的氣密密封構造。如此般，由於感應器模組21係具有氣密密封構造，故可整合得到能抑制因對基板等極低溫供熱所致的基板翹曲及對焊接接合部的損傷，以及用以抑制外部靜電影響的接地效果。又，較佳地係對感應器模組21之外裝體26賦予機能性的金屬薄膜。藉此，便可抑制在處理容器1內所產生之電磁場及靜電等的雜訊影響。機能性之金屬薄膜可為具有磁氣遮蔽、靜電遮蔽以及防止帶電等的機能的膜，例如可為鎳合金系之膜。
如上述說明，第1構成例相關之可動體構造中，係可以非接觸來將構成 為可旋轉之載置台2所設置之感應器模組21的溫度感應器22所測量之溫度傳遞至冷凍導熱體5b所設置之收發模組51。因此，即便在載置台2與冷凍導熱體5b之間產生有溫度差的情況，仍不會因熱電勢的差異而產生測量誤差。其結果，便可精度良好地測量旋轉體之載置台2的溫度。
又，本發明實施形態相關之可動體構造係感應器模組21及收發模組51具有氣密密封構造。因此，藉由抑制對基板等的極低溫供熱、基板的翹曲、對焊接接合部的損傷以及用以抑制外部靜電影響的接地效果及靜電遮蔽或防止帶電，便可抑制在處理容器1內所產生之電磁場及靜電等的雜訊影響。其結果，便可降低測量誤差，而精度良好地測量旋轉體之載置台2的溫度。
又，本發明實施形態相關之可動體構造係感應器模組21及收發模組51會以非接觸來進行各種訊號之收發。因此，便不會有為以往滑環方式的課題的因集電環與電刷之接觸而產生的污染(contaminate)且使壽命延長。又，由於構成構件的分解及組裝都很輕易，故可縮短分解或組裝所需的時間。進一步地，即便在因熱的膨脹或收縮而使冷凍導熱體5b上面與載置台2下面的間隙G1(冷卻氣體通路)的距離改變的情況，仍無須注意斷線等的影響，而可藉由調整線圈之圈數及大小來輕易對應。
接著，便就本發明實施形態相關之可動體構造的第2構成例來加以說明。圖4係顯示本發明實施形態相關之可動體構造的第2構成例之概略剖面圖。
如圖4所示，第2構成例之可動體構造係在冷卻機構5之冷凍導熱體5b設置有1個收發模組51，而在於載置台2設置有複數感應器模組21的點上，來與圖2所示之第1構成例的可動體構造有所不同。
感應器模組21係設置於載置台2之複數位置。圖示的範例中，載置台2係設置有複數感應器模組21a、21b、21c、21d、21e。藉此，便可測量載置台2面內之複數位置的溫度。因此，便可基於載置台2面內之複數位置的溫度來控制載置台2溫度，而可提升溫度的面內均勻性。
收發模組51係配置為可與複數感應器模組21a、21b、21c、21d、21e收發感應器訊號或電力訊號等的各種訊號。圖式之範例中，收發模組51會以沿著冷凍導熱體5b之徑向而從中心朝外側延伸的方式來形成為例如矩形 狀。收發模組51會伴隨著旋轉台2旋轉，而依序與複數感應器模組21a、21b、21c、21d、21e收發各種訊號。圖式之範例中，係顯示位於可在收發模組51與感應器模組21a、21b、21c、21d、21e之間收發感應器訊號或電力訊號的狀態時的感應器模組21與收發模組51之位置關係。
接著，便就本發明實施形態相關之可動體構造的第3構成例來加以說明。圖5係顯示本發明實施形態相關之可動體構造的第3構成例之概略剖面圖。
如圖5所示，第3構成例的可動體構造係在靜電夾具3之電極3b會以非接觸來對感應器模組21傳送電力訊號的點上，來與第2構成例的可動體構造有所不同。
感應器模組21係具有可從靜電夾具3之電極3b以非接觸來收發電力訊號的線圈。藉此，感應器線圈21即便在無法從收發模組51來收發電力訊號，或是電力訊號不穩定的情況，仍可從靜電夾具3之電極3b以非接觸來加以供電，故可確保穩定的電力。
另外，上述實施形態中，載置台2係可動部一範例，冷凍導熱體5b係固定部一範例。
以上，雖已就用以實施本發明之形態來加以說明，但上述內容並非限制發明內容，而是可在本發明範圍內進行各種變形及改良。
另外，上述實施形態中，雖舉感應器模組21包含溫度感應器22的情況為範例來加以說明，但並不限於此，亦可包含例如位移感應器等的其他感應器。在感應器模組21包含位移感應器的情況，可藉由位移感應器以非接觸來精度良好地測量旋轉體之位置資訊。又，其他感應器之範例可舉例有物體之有無(存貨)、位置(位置儀)、位移(差動變壓器)、尺寸(編碼器)、壓力，應力，歪斜，力矩，重量(歪斜測量儀、感壓二極體、荷重計、光圈、布耳頓管(Bourdon tube)、波紋管)、角度(分解器、編碼器)、速度，旋轉數(超音波、雷射多波器等)、加速度，震動(壓電元件、加速度感應器)、溫度(雙金屬片、熱電偶、阻抗測溫體、電熱調節器或光測高溫計)、磁氣(磁針、霍耳元件、MR感應器等)或光(光二極體，閘流器、光電倍增管、CCD影像感應器等)等的感應器。
1‧‧‧處理容器
16‧‧‧滑環
17‧‧‧旋轉部
18‧‧‧驅動機構
19‧‧‧密封部
2‧‧‧載置台
2a‧‧‧下面
21‧‧‧感應器模組(雙重真空管構造)
3‧‧‧靜電夾具
3a‧‧‧介電體膜
3b‧‧‧電極
5‧‧‧冷卻機構
5a‧‧‧冷凍機
5b‧‧‧冷凍導熱體
51‧‧‧收發模組
W‧‧‧基板
G1、G2‧‧‧間隙
C‧‧‧中心軸
L1‧‧‧配線

Claims (12)

  1. 一種可動體構造，係具備有：處理容器，係構成為可在真空環境下進行處理；固定部，係配置於該處理容器內；可動部，係設置為可相對於該固定部來加以移動；收發模組，係設置於該固定部，並具有氣密密封構造；以及感應器模組，係設置於該可動部，並具有氣密密封構造；該收發模組與該感應器模組係以非接觸來進行訊號的收發。
  2. 如申請專利範圍第1項之可動體構造，其中該固定部係設置有1個該收發模組；該可動部係設置有複數該感應器模組；該1個該收發模組係配置為可在與該複數該感應器模組之間收發訊號。
  3. 如申請專利範圍第1或2項之可動體構造，其中該可動部係載置基板之載置台。
  4. 如申請專利範圍第3項之可動體構造，其中該載置台係包含靜電夾具；對該感應器模組之供電係從該靜電夾具之電極以非接觸來進行。
  5. 如申請專利範圍第3項之可動體構造，其中該固定部係包含冷卻該載置台之冷卻機構。
  6. 如申請專利範圍第5項之可動體構造，其中該冷卻機構係將該載置台冷卻至極低溫之溫度。
  7. 如申請專利範圍第5項之可動體構造，其中該冷卻機構係配置為使其中心會一致於該載置台之旋轉中心的中心軸。
  8. 如申請專利範圍第5項之可動體構造，其中該冷卻機構係包含：冷凍機；以及冷凍導熱體，係設置於該冷凍機上；在該冷凍導熱體的上面與該載置台的下面之間係設置有供給有冷卻氣體之冷卻通路。
  9. 如申請專利範圍第1或2項之可動體構造，其中該感應器模組係包含測量該可動部之溫度的溫度感應器。
  10. 如申請專利範圍第9項之可動體構造，其中該溫度感應器係二極體感應器。
  11. 如申請專利範圍第9項之可動體構造，其中該溫度感應器係熱電偶。
  12. 一種成膜裝置，係具備有：如申請專利範圍第1至11項中任一項的可動體構造；以及二極體，係設置於該處理容器內。
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