TWI742222B - 用於直接視野顯示之具有集成反射器的發光二極體及其製造方式 - Google Patents

用於直接視野顯示之具有集成反射器的發光二極體及其製造方式 Download PDF

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TWI742222B
TWI742222B TW107100606A TW107100606A TWI742222B TW I742222 B TWI742222 B TW I742222B TW 107100606 A TW107100606 A TW 107100606A TW 107100606 A TW107100606 A TW 107100606A TW I742222 B TWI742222 B TW I742222B
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layer
emitting diodes
light
view display
display device
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TW107100606A
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Chinese (zh)
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TW201842682A (zh
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法瑞巴 丹尼斯
奈森 Ｆ 高納
強納森 Ｊ 維雷爾二世
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美商納諾西斯有限公司
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
TW107100606A 2017-01-09 2018-01-08 用於直接視野顯示之具有集成反射器的發光二極體及其製造方式 TWI742222B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762444010P 2017-01-09 2017-01-09
US62/444,010 2017-01-09

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TW201842682A TW201842682A (zh) 2018-12-01
TWI742222B true TWI742222B (zh) 2021-10-11

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TW110133230A TWI760282B (zh) 2017-01-09 2018-01-08 用於直接視野顯示之具有集成反射器的發光二極體及其製造方式
TW107100606A TWI742222B (zh) 2017-01-09 2018-01-08 用於直接視野顯示之具有集成反射器的發光二極體及其製造方式

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US (1) US10553767B2 (ko)
EP (1) EP3566251B1 (ko)
JP (1) JP6870098B2 (ko)
KR (2) KR102468071B1 (ko)
TW (2) TWI760282B (ko)
WO (1) WO2018129428A1 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7147132B2 (ja) * 2017-05-31 2022-10-05 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法
US11362238B2 (en) 2017-10-06 2022-06-14 Nanosys, Inc. Light emitting diode containing oxidized metal contacts
US10804436B2 (en) 2017-10-06 2020-10-13 Glo Ab Light emitting diode containing oxidized metal contacts
WO2019199946A1 (en) 2018-04-11 2019-10-17 Glo Ab Light emitting diodes formed on nanodisk substrates and methods of making the same
TWI828679B (zh) 2018-04-20 2024-01-11 美商納諾西斯有限公司 用於直視型顯示器之子像素發光二極體及其製造方法
KR102618212B1 (ko) * 2018-12-03 2023-12-28 나노시스, 인크. 비활성화된 영역을 포함하는 발광 다이오드 및 이의 제조방법
CN111525013A (zh) 2019-02-01 2020-08-11 隆达电子股份有限公司 发光二极管及其制造方法
DE102019106938A1 (de) * 2019-03-19 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit isolierender Schicht und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
JP2020166191A (ja) * 2019-03-29 2020-10-08 株式会社ジャパンディスプレイ 表示装置
EP3745475B1 (en) * 2019-05-28 2024-03-06 OSRAM Opto Semiconductors GmbH A method of producing an array of micro-leds
US11444065B2 (en) 2019-05-30 2022-09-13 Nanosys, Inc. Light emitting diode device containing a positive photoresist insulating spacer and a conductive sidewall contact and method of making the same
EP3754731A1 (en) * 2019-06-21 2020-12-23 Aledia Method for local removal of semiconductor wires
GB2586861B (en) * 2019-09-06 2022-01-19 Plessey Semiconductors Ltd Light Emitting Diode and method of forming a Light Emitting Diode
KR20220077914A (ko) * 2019-10-03 2022-06-09 리얼디 스파크, 엘엘씨 수동형 광학 나노구조를 포함하는 조명 장치
EP3806169A1 (en) * 2019-10-11 2021-04-14 Aledia Method of forming a dielectric collar for semiconductor wires
TW202137481A (zh) 2019-12-11 2021-10-01 瑞典商Ｇｌｏ公司 在晶粒轉移期間的部分雷射剝離程序及由其形成之結構
JP2021196583A (ja) 2020-06-18 2021-12-27 株式会社ジャパンディスプレイ 表示装置
JP7547960B2 (ja) * 2020-11-30 2024-09-10 セイコーエプソン株式会社 発光装置の製造方法
JP2022152157A (ja) * 2021-03-29 2022-10-12 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP2022152161A (ja) * 2021-03-29 2022-10-12 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
WO2023282177A1 (ja) * 2021-07-08 2023-01-12 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法
DE112022003001T5 (de) * 2021-09-08 2024-03-28 Ams-Osram International Gmbh Optoelektronisches bauelement, bauelementeinheit und verfahren zu deren herstellung
TWI797915B (zh) * 2021-12-27 2023-04-01 友達光電股份有限公司 鏡面顯示器
GB202212397D0 (en) * 2022-08-25 2022-10-12 Crayonano As Nanowire device with mask layer
WO2024052971A1 (ja) 2022-09-06 2024-03-14 アルディーテック株式会社 発光ダイオードチップ、発光ダイオードチップ集積装置および発光ダイオードチップ集積装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150236202A1 (en) * 2014-02-18 2015-08-20 Samsung Electronics Co., Ltd. Nanostructure semiconductor light emitting device
US20160093665A1 (en) * 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141492A (ja) * 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
US6848610B2 (en) 2003-03-25 2005-02-01 Intel Corporation Approaches for fluxless soldering
US7274040B2 (en) 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
JP2006147679A (ja) 2004-11-17 2006-06-08 Sony Corp 集積型発光ダイオード、集積型発光ダイオードの製造方法、発光ダイオードディスプレイおよび発光ダイオード照明装置
WO2008140611A2 (en) * 2006-12-18 2008-11-20 The Regents Of The University Of California Nanowire array-based light emitting diodes and lasers
WO2008085129A1 (en) 2007-01-12 2008-07-17 Qunano Ab Nitride nanowires and method of producing such
US8941566B2 (en) 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
CN103022282B (zh) 2008-07-07 2016-02-03 格罗有限公司 纳米结构led
SE533531C2 (sv) 2008-12-19 2010-10-19 Glo Ab Nanostrukturerad anordning
US8816324B2 (en) 2010-02-25 2014-08-26 National University Corporation Hokkaido University Semiconductor device and method for manufacturing semiconductor device
CN202216110U (zh) * 2011-09-07 2012-05-09 北京京东方光电科技有限公司 直下式背光源装置及显示装置
US20130187179A1 (en) * 2012-01-23 2013-07-25 Sharp Kabushiki Kaisha Light emitting diode with improved directionality
US9029880B2 (en) * 2012-12-10 2015-05-12 LuxVue Technology Corporation Active matrix display panel with ground tie lines
US9484504B2 (en) * 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
JP6409063B2 (ja) 2013-12-17 2018-10-17 グロ アーベーＧｌｏ Ａｂ 歪み修正面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄ及びその製造方法
US9664636B2 (en) 2013-12-23 2017-05-30 Thermo Fisher Scientific Aquasensors Llc Chlorine detection with pulsed amperometric detection
KR102203461B1 (ko) * 2014-07-10 2021-01-18 삼성전자주식회사 나노 구조 반도체 발광 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150236202A1 (en) * 2014-02-18 2015-08-20 Samsung Electronics Co., Ltd. Nanostructure semiconductor light emitting device
US20160093665A1 (en) * 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display

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