TWI738634B - 正型感光性樹脂組成物、硬化膜及顯示元件 - Google Patents

正型感光性樹脂組成物、硬化膜及顯示元件 Download PDF

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Publication number
TWI738634B
TWI738634B TW104140780A TW104140780A TWI738634B TW I738634 B TWI738634 B TW I738634B TW 104140780 A TW104140780 A TW 104140780A TW 104140780 A TW104140780 A TW 104140780A TW I738634 B TWI738634 B TW I738634B
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TW
Taiwan
Prior art keywords
component
photosensitive resin
resin composition
positive photosensitive
mass
Prior art date
Application number
TW104140780A
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English (en)
Chinese (zh)
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TW201635033A (zh
Inventor
竹田佳代
畑中真
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日商日產化學工業股份有限公司
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Publication of TW201635033A publication Critical patent/TW201635033A/zh
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Publication of TWI738634B publication Critical patent/TWI738634B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optics & Photonics (AREA)
TW104140780A 2014-12-04 2015-12-04 正型感光性樹脂組成物、硬化膜及顯示元件 TWI738634B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-245972 2014-12-04
JP2014245972 2014-12-04

Publications (2)

Publication Number Publication Date
TW201635033A TW201635033A (zh) 2016-10-01
TWI738634B true TWI738634B (zh) 2021-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104140780A TWI738634B (zh) 2014-12-04 2015-12-04 正型感光性樹脂組成物、硬化膜及顯示元件

Country Status (5)

Country Link
JP (1) JP6744577B2 (ja)
KR (1) KR102622165B1 (ja)
CN (1) CN107003607B (ja)
TW (1) TWI738634B (ja)
WO (1) WO2016088757A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI773645B (zh) * 2015-07-30 2022-08-11 日商東京應化工業股份有限公司 感光性組成物、圖型形成方法、永久膜及ｃｍｏｓ影像感測器用濾色片

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KR102040224B1 (ko) * 2016-08-09 2019-11-06 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
KR101947150B1 (ko) * 2016-08-09 2019-02-12 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
WO2018088754A1 (ko) * 2016-11-11 2018-05-17 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
KR102040225B1 (ko) * 2016-11-11 2019-11-06 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
KR102080079B1 (ko) 2018-10-30 2020-02-21 인하대학교 산학협력단 고불소계 용제에 용해성을 가지는 고불소화 단분자 포토레지스트 및 이를 이용한 패턴 형성 방법
WO2024024501A1 (ja) * 2022-07-29 2024-02-01 日産化学株式会社 ポジ型感光性樹脂組成物
CN115160495B (zh) * 2022-08-15 2024-05-14 四川华造宏材科技有限公司 含马来酰亚胺结构的光刻胶成膜树脂及其制备方法

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TW201433883A (zh) * 2013-01-16 2014-09-01 Jsr Corp 硬化膜形成用熱硬化性樹脂組成物、負型感放射線性樹脂組成物、正型感放射線性樹脂組成物、硬化膜、其形成方法、半導體元件及顯示元件

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
CN107003607B (zh) 2021-05-28
JP6744577B2 (ja) 2020-08-19
TW201635033A (zh) 2016-10-01
KR102622165B1 (ko) 2024-01-08
CN107003607A (zh) 2017-08-01
JPWO2016088757A1 (ja) 2017-09-21
KR20170092542A (ko) 2017-08-11
WO2016088757A1 (ja) 2016-06-09

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