TWI733546B - Substrate processing apparatus - Google Patents
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- TWI733546B TWI733546B TW109126762A TW109126762A TWI733546B TW I733546 B TWI733546 B TW I733546B TW 109126762 A TW109126762 A TW 109126762A TW 109126762 A TW109126762 A TW 109126762A TW I733546 B TWI733546 B TW I733546B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D36/00—Filter circuits or combinations of filters with other separating devices
- B01D36/001—Filters in combination with devices for the removal of gas, air purge systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0031—Degasification of liquids by filtration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/11—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with bag, cage, hose, tube, sleeve or like filtering elements
- B01D29/31—Self-supporting filtering elements
- B01D29/35—Self-supporting filtering elements arranged for outward flow filtration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Abstract
基板處理裝置1包含:藥液箱30;第1循環配管31,其連接於藥液箱30;泵,其將藥液箱30內之藥液送出至第1循環配管31中;第2循環配管32,其分支連接於第1循環配管31;過濾器39,其於第1循環配管31中介裝於較第2循環配管32之連接位置P2更靠上游側之上游側部分33;及壓力調整單元,其調整上游側部分33中流動之藥液之壓力。壓力調整單元包含對第2循環配管32之開度進行調整之調節器71。調節器71使基板處理裝置1之循環空轉狀態下上游側部分33中流動之藥液之壓力,與基板處理裝置1之就緒狀態下上游側部分33中流動之藥液之壓力一致或接近。The substrate processing apparatus 1 includes: a chemical tank 30; a first circulation pipe 31 connected to the chemical tank 30; a pump that sends the chemical solution in the chemical tank 30 to the first circulation pipe 31; and a second circulation pipe 32, which is branched and connected to the first circulation pipe 31; a filter 39, which is interposed in the first circulation pipe 31, and is installed in the upstream portion 33 on the upstream side than the connection position P2 of the second circulation pipe 32; and a pressure adjustment unit , Which adjusts the pressure of the liquid medicine flowing in the upstream portion 33. The pressure adjustment unit includes a regulator 71 that adjusts the opening degree of the second circulation pipe 32. The regulator 71 makes the pressure of the chemical liquid flowing in the upstream portion 33 in the circulating idle state of the substrate processing apparatus 1 coincide with or close to the pressure of the chemical liquid flowing in the upstream portion 33 in the ready state of the substrate processing apparatus 1.
Description
本發明係關於一種基板處理裝置。成為處理對象之基板之例包含半導體晶圓、液晶顯示裝置用基板、有機EL(Electroluminescence,電致發光)顯示裝置等FPD(Flat Panel Display,平板顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等。The invention relates to a substrate processing device. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal display devices, and substrates for FPD (Flat Panel Display) such as organic EL (Electroluminescence) display devices, substrates for optical disks, and substrates for magnetic disks. , Magneto-optical disc substrate, photomask substrate, ceramic substrate, solar cell substrate, etc.
半導體裝置或液晶顯示裝置等之製造步驟中,使用對半導體晶圓或液晶顯示裝置用玻璃基板等基板進行處理之基板處理裝置。In the manufacturing steps of semiconductor devices, liquid crystal display devices, etc., a substrate processing apparatus that processes substrates such as semiconductor wafers or glass substrates for liquid crystal display devices is used.
如日本專利特開2013-175552號公報及日本專利特開2007-266211號公報所記載,該種基板處理裝置具備:處理單元;處理液箱,其儲存要供給至處理單元之處理液;循環配管,其使處理液箱內之處理液循環;泵,其將處理液箱內之處理液輸送至循環配管中;及過濾器,其對循環配管中流動之處理液進行過濾。As described in Japanese Patent Laid-Open No. 2013-175552 and Japanese Patent Laid-Open No. 2007-266211, this type of substrate processing apparatus includes: a processing unit; a processing liquid tank that stores processing liquid to be supplied to the processing unit; and a circulation piping , Which circulates the treatment liquid in the treatment liquid tank; a pump, which transports the treatment liquid in the treatment liquid tank to the circulation piping; and a filter, which filters the treatment liquid flowing in the circulation piping.
本案發明者等人研究設置2個循環配管。具體而言,研究設置:外循環配管,其連接於處理液箱,對處理單元供給處理液;及內循環配管,其分支連接於外循環配管。The inventors of this case studied the installation of two circulation pipes. Specifically, the research setup: the outer circulation piping, which is connected to the treatment liquid tank and supplies the treatment liquid to the treatment unit; and the inner circulation piping, whose branches are connected to the outer circulation piping.
該情形時,考慮於外循環配管中之較內循環配管之連接位置更靠上游側之外循環配管之上游側部分介裝過濾器。為了將內循環配管及/或外循環配管中流動之處理液保持為潔淨,必須固定地持續維持過濾器之微粒捕捉能力。In this case, it is considered that a filter is installed in the upstream part of the outer circulation piping that is closer to the upstream side than the connection position of the inner circulation piping in the outer circulation piping. In order to keep the processing liquid flowing in the inner circulation piping and/or the outer circulation piping clean, it is necessary to constantly maintain the particulate trapping ability of the filter.
過濾器之微粒捕捉能力會隨著施加至過濾器之液體之壓力變動而變化。於過濾器之微粒捕捉能力降低之情形時,有此前被過濾器捕捉之微粒從過濾器漏出而污染過濾器之下游側之虞。The particle capture capacity of the filter changes with the pressure of the liquid applied to the filter. When the particle capturing ability of the filter decreases, the particles previously captured by the filter may leak from the filter and contaminate the downstream side of the filter.
過濾器之微粒捕捉能力降低之主要原因並非僅在於此。因大量微粒供給至過濾器而過濾器堵塞亦會使過濾器之微粒捕捉能力降低。The main reason for the reduced particle capture ability of the filter is not just this. The clogging of the filter due to the supply of a large amount of particles to the filter will also reduce the particle capturing ability of the filter.
又,若可計測於內循環配管及/或外循環配管中流動之處理液之微粒量,則亦能夠自內循環配管及/或外循環配管中排除含有大量微粒之處理液。In addition, if the amount of particles in the treatment liquid flowing in the inner circulation pipe and/or the outer circulation pipe can be measured, the treatment solution containing a large amount of particles can also be eliminated from the inner circulation pipe and/or the outer circulation pipe.
由此,本發明之目的之一在於提供一種可將微粒含量較少之潔淨之處理液供給至處理單元的基板處理裝置。Therefore, one of the objectives of the present invention is to provide a substrate processing apparatus capable of supplying a clean processing liquid with a small particle content to a processing unit.
本發明之第1態樣(aspect)提供一種基板處理裝置,其包含:處理單元,其具有向基板吐出處理液之吐出口;處理液箱,其儲存供給至上述吐出口之處理液;外循環配管,其包含連接於上述處理液箱之上游端及下游端,且與上述處理液箱一起形成使上述處理液箱內之處理液循環之外循環流路;泵,其將上述處理液箱內之處理液送出至上述外循環配管;吐出口連通配管,其於第1連接位置分支連接於上述外循環配管,且連通於上述吐出口;內循環配管,其於較上述第1連接位置更靠上游側之第2連接位置分支連接於上述外循環配管,且與上述外循環配管之較上述第2連接位置更靠上游側之部分即第2上游側部分及上述處理液箱一起形成使上述處理液箱內之處理液循環之內循環流路,且使自上述外循環配管供給之處理液返回至上述處理液箱;過濾器,其介裝於上述第2上游側部分;壓力調整單元,其調整於上述第2上游側部分流動之處理液之壓力;及控制裝置,其以如下方式控制上述壓力調整單元,即,使處理液不於上述外循環流路中循環而是處理液於上述內循環流路中循環之一方循環狀態下在上述第2上游側部分流動之處理液之壓力,與處理液在上述外循環流路及上述內循環流路之兩者中循環之雙循環狀態下在上述第2上游側部分流動之處理液之壓力一致或接近。A first aspect of the present invention provides a substrate processing apparatus, which includes: a processing unit having a discharge port for discharging a processing liquid to a substrate; a processing liquid tank that stores the processing liquid supplied to the discharge port; and an external circulation The piping includes the upstream end and the downstream end connected to the processing liquid tank, and together with the processing liquid tank, it forms a circulation flow path that circulates the processing liquid in the processing liquid tank; a pump that circulates the processing liquid in the processing liquid tank The processing liquid is sent to the outer circulation pipe; the discharge port communication pipe is branched and connected to the outer circulation pipe at the first connection position and communicates with the discharge port; the inner circulation pipe is closer to the first connection position The second connection position on the upstream side is branched and connected to the outer circulation piping, and is formed with the portion of the outer circulation piping that is more upstream than the second connection position, that is, the second upstream side portion and the treatment tank to form the treatment tank. The internal circulation flow path in which the treatment liquid in the tank circulates, and returns the treatment liquid supplied from the outer circulation pipe to the treatment liquid tank; a filter, which is interposed in the second upstream part; a pressure adjustment unit, which Adjusting the pressure of the processing liquid flowing in the second upstream part; and a control device that controls the pressure adjusting unit in such a way that the processing liquid does not circulate in the outer circulation flow path but the processing liquid is in the inner The pressure of the treatment liquid flowing in the second upstream part in the circulation state of one side of the circulation flow path and the treatment liquid circulating in both the outer circulation flow path and the inner circulation flow path are in a dual circulation state The pressure of the processing liquid flowing in the second upstream part is the same or close to each other.
過濾器之微粒捕捉能力會因施加至過濾器之壓力之大小而變化。對過濾器施加有壓力之狀態下,相較於不對過濾器施加壓力之狀態,能夠捕捉更小之微粒。而且,隨著對過濾器施加之壓力增大,能夠捕捉進而更小之微粒。反之,當對過濾器施加之壓力減小時,能夠捕捉之微粒變大,過濾器之微粒捕捉能力降低。即,過濾器之微粒捕捉能力會根據對過濾器施加之壓力之變動而變化。於過濾器之微粒捕捉能力降低之情形時,有此前被過濾器捕捉之微粒自過濾器向二次側流出之虞。The particle capture ability of the filter will vary depending on the pressure applied to the filter. When pressure is applied to the filter, it can capture smaller particles than when no pressure is applied to the filter. Moreover, as the pressure applied to the filter increases, even smaller particles can be captured. Conversely, when the pressure applied to the filter decreases, the amount of particles that can be captured becomes larger, and the particle capture ability of the filter decreases. That is, the particle capturing ability of the filter changes according to the change of the pressure applied to the filter. When the particle capturing ability of the filter decreases, the particles previously captured by the filter may flow out of the filter to the secondary side.
另一方面,當對過濾器施加之壓力過大時,於過濾器中之流量及/或流速超過容許,其結果,有微粒通過過濾器之虞。為了利用過濾器而較佳地捕獲微粒,需要固定地維持對過濾器施加之壓力。On the other hand, when the pressure applied to the filter is too high, the flow rate and/or the flow velocity in the filter exceed the allowable, and as a result, there is a risk of particulates passing through the filter. In order to use the filter to better capture the particles, the pressure applied to the filter needs to be fixedly maintained.
根據上述構成,以如下方式控制壓力調整單元,即,使處理液於內循環流路中循環之一方循環狀態下在第2上游側部分中流動之處理液之壓力,與處理液在外循環流路及內循環流路之兩者中循環之雙循環狀態下在第2上游側部分中流動之處理液之壓力一致或接近。由於一方循環狀態下對過濾器施加之壓力,與雙循環狀態下對過濾器施加之壓力一致或接近,因此可不因處理液之循環狀態而有所不同,而固定地保持過濾器之微粒捕捉能力。According to the above configuration, the pressure adjusting unit is controlled in such a way that the pressure of the processing liquid flowing in the second upstream part in the state of one side of the circulation of the processing liquid in the inner circulation flow path is the same as the pressure of the processing liquid flowing in the outer circulation flow path. The pressure of the treatment liquid flowing in the second upstream part in the double-circulation state of both the internal circulation channel and the internal circulation channel is the same or close. Since the pressure applied to the filter in one cycle state is the same as or close to the pressure applied to the filter in the double cycle state, it does not vary depending on the circulation state of the treatment liquid, and the filter’s particle capture ability is fixed. .
藉此,可抑制或防止所捕捉之微粒隨著對過濾器施加之壓力之變化而自過濾器漏出。故而,可將微粒含量較少之潔淨之處理液(較佳為,不包含微粒之潔淨之處理液)供給至處理單元。Thereby, it is possible to suppress or prevent the trapped particles from leaking from the filter due to changes in the pressure applied to the filter. Therefore, a clean treatment liquid (preferably, a clean treatment liquid that does not contain particles) with less particulate content can be supplied to the processing unit.
第1態樣中,上述壓力調整單元包含對上述內循環配管之開度進行調整之開度調整單元。In the first aspect, the pressure adjustment unit includes an opening adjustment unit that adjusts the opening of the internal circulation pipe.
根據上述構成,藉由利用壓力調整單元對內循環配管之開度進行調整,而調整於第2上游側部分中流動之處理液之壓力。藉此,可利用簡單構成來調整於第2上游側部分中流動之處理液之壓力。According to the above configuration, the pressure of the processing liquid flowing in the second upstream portion is adjusted by adjusting the opening degree of the internal circulation pipe by the pressure adjusting unit. Thereby, the pressure of the processing liquid flowing in the second upstream portion can be adjusted with a simple structure.
第1態樣中,作為上述基板處理裝置之動作狀態,可選擇性執行地設置有:可執行狀態,其係執行上述雙循環狀態;及待機狀態,其係與上述可執行狀態不同之狀態,且維持對上述基板處理裝置之電力供給;上述待機狀態包含實現上述一方循環狀態之循環待機狀態。In the first aspect, as the operating state of the substrate processing apparatus, there are selectively executable states: an executable state, which executes the above-mentioned two-cycle state; and a standby state, which is a state different from the above-mentioned executable state, And the power supply to the substrate processing apparatus is maintained; the standby state includes a cycle standby state that realizes the one cycle state.
根據上述構成,以如下方式控制壓力調整單元,即,使基板處理裝置之循環待機狀態下於第2上游側部分中流動之處理液之壓力,與基板處理裝置之可執行狀態下於第2上游側部分中流動之處理液之壓力一致或接近。由於基板處理裝置之循環待機狀態下對過濾器施加之壓力,與基板處理裝置1之可執行狀態下對過濾器施加之壓力一致或接近,因此可不因基板處理裝置之動作狀態為循環待機狀態或可執行狀態而有所不同,而固定或大致固定地保持過濾器之微粒捕捉能力。According to the above configuration, the pressure adjusting unit is controlled in such a way that the pressure of the processing liquid flowing in the second upstream side portion in the circulation standby state of the substrate processing apparatus and the second upstream portion in the executable state of the substrate processing apparatus are controlled The pressure of the processing liquid flowing in the side part is the same or close. Since the pressure applied to the filter in the cycle standby state of the substrate processing apparatus is the same as or close to the pressure applied to the filter in the executable state of the
第1態樣中,上述待機狀態進而包含循環停止待機狀態,該循環停止待機狀態係一面維持對上述基板處理裝置之電力供給,一面停止上述泵之驅動而使上述外循環流路及上述內循環流路中之處理液的循環停止。In the first aspect, the standby state further includes a cycle stop standby state in which the power supply to the substrate processing apparatus is maintained while the pump is stopped, so that the outer circulation flow path and the inner circulation are stopped. The circulation of the treatment liquid in the flow path stops.
根據上述構成,待機狀態包含:循環待機狀態,其係處理液不於外循環流路中循環而是處理液於內循環流路中循環;及循環停止待機狀態,其係停止泵之驅動(於外循環流路及內循環流路之兩者中停止處理液之循環)。According to the above configuration, the standby state includes: a circulating standby state in which the processing liquid does not circulate in the outer circulation flow path but the processing liquid circulates in the inner circulation flow path; and a circulation stop standby state in which the driving of the pump is stopped (in Stop the circulation of the treatment liquid in both the outer circulation flow path and the inner circulation flow path).
循環待機狀態中,處理液不於外循環流路中循環,而是處理液於內循環流路中循環。因此,於維護作業之對象部位為不影響內循環流路中之處理液循環之部位之情形時(例如,對處理單元、搬送機器人進行維護作業之情形時),能夠一面將基板處理裝置設定為循環待機狀態,一面對基板處理裝置進行維護作業。In the circulation standby state, the treatment liquid does not circulate in the outer circulation flow path, but the treatment liquid circulates in the inner circulation flow path. Therefore, when the target part of the maintenance work is a part that does not affect the circulation of the processing liquid in the internal circulation flow path (for example, when performing maintenance work on the processing unit or the transport robot), the substrate processing device can be set to In the cyclic standby state, maintenance operations are performed while facing the substrate processing device.
另一方面,於維護對象為影響到內循環流路中之處理液循環之部位之情形時,無法一面於內循環流路中進行處理液循環,一面進行維護作業。因此,該情形時,將基板處理裝置之動作狀態設定為循環停止待機狀態。On the other hand, when the maintenance object is a position that affects the circulation of the treatment liquid in the inner circulation flow path, it is impossible to perform maintenance work while circulating the treatment liquid in the inner circulation flow path. Therefore, in this case, the operation state of the substrate processing apparatus is set to the cycle stop standby state.
如此,能夠根據維護部位而分開使用複數個待機狀態。因此,能夠縮短泵成為停止狀態之期間。故而,可使基板處理裝置之運轉率提高。In this way, a plurality of standby states can be used separately according to the maintenance location. Therefore, the period during which the pump is in the stopped state can be shortened. Therefore, the operation rate of the substrate processing apparatus can be improved.
第1態樣中,上述基板處理裝置進而包含:內循環閥,其介裝於上述內循環配管中,對上述內循環配管進行開閉;排液配管,其於第3連接位置分支連接於上述外循環配管中之較上述第2連接位置更靠下游側之部分即第2下游側部分,將處理液自上述第2下游側部分排出;及第1切換單元,其將上述第2下游側部分之較上述第3連接位置更靠上游側之處理液之目的地,於上述第2下游側部分之較上述第3連接位置更靠下游側、與上述排液配管之間切換;上述控制裝置於自上述循環停止待機狀態朝上述可執行狀態轉移時執行如下步驟,即,開始上述泵之驅動,關閉上述內循環閥,且以使上述第2下游側部分之較上述第3連接位置更靠上游側之處理液流入至上述排液配管之方式驅動上述第1切換單元,藉此將上述第2上游側部分內之處理液及上述第2下游側部分內之處理液經由上述排液配管而排出。In the first aspect, the substrate processing apparatus further includes: an internal circulation valve installed in the internal circulation piping to open and close the internal circulation piping; and a drain piping that is branched and connected to the external at a third connection position The part of the circulation piping that is further downstream than the second connection position, that is, the second downstream part, discharges the processing liquid from the second downstream part; and the first switching unit, which displaces the second downstream part The destination of the treatment liquid on the upstream side than the third connection position is switched between the second downstream side portion on the downstream side than the third connection position and the discharge piping; When the cycle stop standby state transitions to the executable state, the following steps are executed, that is, start the drive of the pump, close the internal circulation valve, and make the second downstream side part more upstream than the third connection position The processing liquid flows into the discharge pipe to drive the first switching unit, thereby discharging the processing liquid in the second upstream portion and the processing liquid in the second downstream portion through the drainage pipe.
基板處理裝置之循環停止待機狀態下,停止泵之驅動。該狀態下,停止處理液之循環,而無過濾器中之處理液的移動。此時,不對過濾器施加壓力。因此,過濾器之微粒捕捉能力降低。因此,基板處理裝置之循環停止待機狀態下,被過濾器捕捉之微粒自過濾器向二次側流出並積存於過濾器之二次側。當於過濾器之二次側積存有微粒之狀態下,開始泵之驅動從而使處理液之循環開始時,有積存於過濾器之二次側之微粒擴散於外循環流路及/或內循環流路之全體區域之虞。In the cycle stop standby state of the substrate processing device, stop the driving of the pump. In this state, the circulation of the treatment liquid is stopped, and there is no movement of the treatment liquid in the filter. At this time, no pressure is applied to the filter. Therefore, the particle capturing ability of the filter is reduced. Therefore, in the cycle stop standby state of the substrate processing apparatus, the particles captured by the filter flow out from the filter to the secondary side and are accumulated on the secondary side of the filter. When particles are accumulated on the secondary side of the filter, the pump is driven to start the circulation of the treatment liquid, and the particles accumulated on the secondary side of the filter diffuse in the outer circulation flow path and/or the inner circulation The whole area of the flow path is concerned.
根據上述構成,於自循環停止待機狀態朝可執行狀態轉移時,第2上游側部分內之處理液及第2下游側部分內之處理液經由排液配管而排出至基板處理裝置外。藉此,可抑制或防止內循環流路及/或外循環流路被包含微粒之處理液污染。According to the above configuration, when transitioning from the cycle stop standby state to the executable state, the processing liquid in the second upstream portion and the processing liquid in the second downstream portion are discharged to the outside of the substrate processing apparatus through the liquid discharge pipe. Thereby, it is possible to suppress or prevent the inner circulation flow path and/or the outer circulation flow path from being contaminated by the treatment liquid containing particles.
第1態樣中,上述基板處理裝置進而包含選擇單元,該選擇單元係由使用者操作,而用於選擇包含上述循環待機狀態與上述循環停止待機狀態之複數個待機狀態之任一者。In the first aspect, the substrate processing apparatus further includes a selection unit operated by a user to select any one of a plurality of standby states including the cycle standby state and the cycle stop standby state.
根據上述構成,藉由由基板處理裝置之使用者(包含維護負責人等)操作選擇單元,可選擇性地執行循環待機狀態及循環停止待機狀態。According to the above configuration, by operating the selection unit by the user of the substrate processing apparatus (including maintenance personnel, etc.), the cycle standby state and the cycle stop standby state can be selectively executed.
第1態樣中,上述基板處理裝置進而包含偵測單元,該偵測單元偵測與上述基板處理裝置相關之狀態,於在上述循環待機狀態下藉由上述偵測單元而偵測出上述狀態之情形時,上述控制裝置進而執行如下步驟,即,停止上述泵之驅動而使上述外循環流路中之處理液的循環停止。In the first aspect, the substrate processing apparatus further includes a detection unit that detects a state related to the substrate processing apparatus, and detects the state by the detection unit in the cycle standby state In this case, the control device further executes the steps of stopping the driving of the pump and stopping the circulation of the processing liquid in the outer circulation flow path.
根據上述構成,於在循環待機狀態下藉由偵測單元而偵測出既定狀態之情形時,停止泵之驅動。即,該情形時,使內循環流路中之處理液的循環停止。循環待機狀態下,能夠對基板處理裝置進行維護作業。於基板處理裝置產生既定狀態之情形時,有時不宜繼續進行該維護作業。According to the above structure, when the predetermined state is detected by the detection unit in the cyclic standby state, the driving of the pump is stopped. That is, in this case, the circulation of the processing liquid in the internal circulation flow path is stopped. In the cycle standby state, maintenance work can be performed on the substrate processing apparatus. When the substrate processing device has a predetermined state, it is sometimes not appropriate to continue the maintenance operation.
因此,採用能夠偵測既定狀態之構成,當產生如此之既定狀態時,藉由使外循環流路中之後續處理液的循環停止,而可預防產生不期望之事情。Therefore, a configuration capable of detecting a predetermined state is adopted. When such a predetermined state is generated, the circulation of the subsequent processing liquid in the outer circulation flow path is stopped, thereby preventing the occurrence of undesirable things.
第1態樣中,上述基板處理裝置包含複數個上述處理單元,上述外循環配管包含對上述複數個上述處理單元共通地供給處理液之第1循環配管,上述吐出口連通配管包含與上述複數個上述處理單元一對一地對應之複數個供給配管。In a first aspect, the substrate processing apparatus includes a plurality of the processing units, the outer circulation piping includes a first circulation piping that supplies the processing liquid to the plurality of the processing units in common, and the discharge port communication pipe includes the plurality of processing units. The above-mentioned processing unit corresponds to a plurality of supply pipes one-to-one.
根據上述構成,藉由與處理單元一對一對應地設置之供給配管分支連接於第1循環配管,於第1循環流路中流動之處理液經由供給配管而供給至處理單元。According to the above configuration, the supply pipe provided in one-to-one correspondence with the processing unit is branched and connected to the first circulation pipe, and the processing liquid flowing in the first circulation flow path is supplied to the processing unit via the supply pipe.
本發明之第2態樣提供一種基板處理裝置,其包含:處理單元,其具有向基板吐出處理液之吐出口;處理液箱,其儲存供給至上述吐出口之處理液;外循環配管,其包含連接於上述處理液箱之上游端及下游端,且與上述處理液箱一起形成使上述處理液箱內之處理液循環之外循環流路;泵,其將上述處理液箱內之處理液送出至上述外循環配管;吐出口連通配管,其於第1連接位置分支連接於上述外循環配管,且連通於上述吐出口;內循環配管,其於較上述第1連接位置更靠上游側之第2連接位置分支連接於上述外循環配管,且與上述外循環配管之較上述第2連接位置更靠上游側之部分即第2上游側部分及上述處理液箱一起形成使上述處理液箱內之處理液循環之內循環流路,且使自上述外循環配管供給之處理液返回至上述處理液箱;第1過濾器及第2過濾器,其等分別介裝於作為上述第2上游側部分之一部分、且於較上述第2連接位置更靠上游側相互並聯連接之第1並聯配管及第2並聯配管;第2切換單元,其將較上述第1並聯配管之上游端及第2並聯配管之上游端相互連接之第4連接位置更靠上游側之處理液之目的地,於上述第1並聯配管、與上述第2並聯配管之間切換;及控制裝置,其於自上述泵之驅動停止之狀態開始上述泵之驅動時,控制上述第2切換單元而將較上述第4連接位置更靠上游側之處理液之目的地設定為上述第2並聯配管,其後,控制上述第2切換單元而將較上述第4連接位置更靠上游側之處理液之目的地切換為上述第1並聯配管。A second aspect of the present invention provides a substrate processing apparatus including: a processing unit having a discharge port for discharging a processing liquid to a substrate; a processing liquid tank that stores the processing liquid supplied to the discharge port; and an external circulation pipe, which It includes the upstream end and the downstream end connected to the above-mentioned treatment liquid tank, and together with the above-mentioned treatment liquid tank, forms a circulation flow path for circulating the treatment liquid in the above-mentioned treatment liquid tank; a pump which transfers the treatment liquid in the above-mentioned treatment liquid tank It is sent to the outer circulation pipe; the discharge port communication pipe is branched and connected to the outer circulation pipe at the first connection position and communicates with the discharge port; the inner circulation pipe is located on the upstream side than the first connection position The second connection position is branched and connected to the outer circulation piping, and is formed with the portion of the outer circulation piping that is more upstream than the second connection position, that is, the second upstream side portion and the treatment liquid tank to form the inside of the treatment liquid tank. The inner circulation flow path of the processing liquid circulating, and the processing liquid supplied from the outer circulation pipe is returned to the processing liquid tank; the first filter and the second filter, etc. are respectively interposed as the second upstream side Part of the first parallel pipe and second parallel pipe connected in parallel on the upstream side of the second connection position; the second switching unit will be connected in parallel than the upstream end of the first parallel pipe and the second parallel The fourth connection position where the upstream ends of the piping are connected to each other is closer to the destination of the treatment liquid on the upstream side, which is switched between the first parallel piping and the second parallel piping; and the control device, which is driven by the pump When the drive of the pump is started in the stopped state, the second switching unit is controlled to set the destination of the processing liquid on the upstream side of the fourth connection position to the second parallel pipe, and then the second switching is controlled The unit switches the destination of the processing liquid on the upstream side from the fourth connection position to the first parallel pipe.
於停止泵之驅動之狀態下,有時會進行機器更換、配管改造等。進行改造等後有時會於機器等上附著有微粒。當於該狀態下,藉由泵之驅動開始而開始處理液之循環,則有機器等上附著之大量微粒被供給至過濾器而使過濾器產生堵塞之虞。其結果,有過濾器之微粒捕捉能力降低,微粒自過濾器漏出之虞。In the state of stopping the drive of the pump, machine replacement, piping modification, etc. are sometimes carried out. After modification, etc., particles may adhere to the equipment. In this state, when the driving of the pump starts and the circulation of the treatment liquid starts, a large amount of particles attached to the equipment etc. may be supplied to the filter and the filter may become clogged. As a result, the particle capturing ability of the filter is reduced, and the particles may leak from the filter.
根據上述構成,於使泵之驅動開始時,將較第4連接位置更靠上游側之處理液之目的地設定為第2並聯配管。當其後經過既定時間時,將較第4連接位置更靠上游側之處理液之目的地切換為第1並聯配管。即,於泵之開始驅動開始時、與其後以外,將捕捉第2上游側部分內之處理液中之微粒之過濾器於第1過濾器與第2過濾器之間切換。於泵之驅動開始時,藉由利用與通常使用之第1過濾器不同之第2過濾器捕獲微粒,可抑制通常使用之第1過濾器產生堵塞。藉此,可抑制或防止來自第1過濾器之微粒的漏出。故而,可將微粒含量較少之潔淨之處理液(較佳為,不包含微粒之潔淨之處理液)供給至處理單元。According to the above configuration, when starting the driving of the pump, the destination of the processing liquid on the upstream side of the fourth connection position is set to the second parallel pipe. When a predetermined time elapses thereafter, the destination of the processing liquid on the upstream side of the fourth connection position is switched to the first parallel pipe. That is, at the start of the driving of the pump, and beyond, the filter that captures the particles in the treatment liquid in the second upstream portion is switched between the first filter and the second filter. At the beginning of the driving of the pump, the second filter which is different from the normally used first filter is used to capture particulates, so that clogging of the normally used first filter can be suppressed. Thereby, the leakage of particles from the first filter can be suppressed or prevented. Therefore, a clean treatment liquid (preferably, a clean treatment liquid that does not contain particles) with less particulate content can be supplied to the processing unit.
該情形時,第1過濾器較佳為過濾性能與第2過濾器不同。尤其理想的是第2過濾器之網孔較第1過濾器之網孔更粗。若第1過濾器之孔徑較小,則被捕捉於第1過濾器之孔內之微粒於該孔所占之比例較大,因此容易引起第1過濾器之堵塞。In this case, the first filter is preferably different in filtration performance from the second filter. It is particularly desirable that the mesh of the second filter is thicker than the mesh of the first filter. If the pore size of the first filter is small, the particles trapped in the pores of the first filter occupy a larger proportion of the pores, which may easily cause clogging of the first filter.
該情形時,於泵之驅動開始時,可藉由第2過濾器捕獲相對較大之微粒,在此以外之期間,可藉由第1過濾器捕獲相對較小之微粒。因此,於泵之驅動開始時,可抑制藉由第2過濾器捕捉之微粒量,因而可抑制第2過濾器之堵塞、及來自第2過濾器之微粒的漏出。In this case, at the start of the driving of the pump, relatively large particles can be captured by the second filter, and during other periods, relatively small particles can be captured by the first filter. Therefore, at the start of driving of the pump, the amount of particulates captured by the second filter can be suppressed, and therefore clogging of the second filter and leakage of particulates from the second filter can be suppressed.
本發明之第3態樣提供一種基板處理裝置,其包含:處理單元,其具有向基板吐出處理液之吐出口;處理液箱,其儲存供給至上述吐出口之處理液;外循環配管,其包含連接於上述處理液箱之上游端及下游端,且與上述處理液箱一起形成使上述處理液箱內之處理液循環之外循環流路;泵,其將上述處理液箱內之處理液送出至上述外循環配管;吐出口連通配管,其於第1連接位置分支連接於上述外循環配管,且連通於上述吐出口;內循環配管,其於較上述第1連接位置更靠上游側之第2連接位置分支連接於上述外循環配管,且與上述外循環配管之較上述第2連接位置更靠上游側之部分即第2上游側部分及上述處理液箱一起形成使上述處理液箱內之處理液循環之內循環流路,且使自上述外循環配管供給之處理液返回至上述處理液箱;及污染狀態計測裝置,其介裝於機器下游區域,對該機器下游區域之污染狀態進行計測,該機器下游區域係設定於上述第2上游側部分中介裝於該第2上游側部分之機器之下游側。A third aspect of the present invention provides a substrate processing apparatus, including: a processing unit having a discharge port for discharging a processing liquid to a substrate; a processing liquid tank that stores the processing liquid supplied to the discharge port; an external circulation pipe, which It includes the upstream end and the downstream end connected to the above-mentioned treatment liquid tank, and together with the above-mentioned treatment liquid tank, forms a circulation flow path for circulating the treatment liquid in the above-mentioned treatment liquid tank; a pump which transfers the treatment liquid in the above-mentioned treatment liquid tank It is sent to the outer circulation pipe; the discharge port communication pipe is branched and connected to the outer circulation pipe at the first connection position and communicates with the discharge port; the inner circulation pipe is located on the upstream side than the first connection position The second connection position is branched and connected to the outer circulation piping, and is formed with the portion of the outer circulation piping that is more upstream than the second connection position, that is, the second upstream side portion and the treatment liquid tank to form the inside of the treatment liquid tank. The inner circulation flow path of the treatment liquid circulating, and the treatment liquid supplied from the outer circulation piping is returned to the treatment liquid tank; and the pollution state measuring device, which is installed in the downstream area of the machine, and the pollution state of the downstream area of the machine In the measurement, the downstream area of the machine is set on the downstream side of the machine installed in the second upstream part in the middle of the second upstream part.
根據上述構成,藉由介裝於第2上游側部分之機器下游區域中之污染狀態計測裝置而對由機器引起產生之微粒進行計測。藉由污染狀態計測裝置,不僅能夠計測有無由機器引起產生之微粒,而且亦能夠計測由機器引起產生之微粒之量。又,污染狀態計測裝置介裝於由機器產生之微粒流動之機器下游區域中,因此可準確計測由機器產生之微粒之量。According to the above configuration, the pollution state measuring device installed in the downstream area of the equipment at the second upstream side portion measures the particles generated by the equipment. With the pollution state measuring device, not only the presence or absence of particles generated by the machine can be measured, but also the amount of particles generated by the machine can be measured. In addition, the pollution state measuring device is installed in the downstream area of the machine where the particles produced by the machine flow, so the amount of particles produced by the machine can be accurately measured.
故而,可將微粒含量較少之潔淨之處理液(較佳為,不包含微粒之潔淨之處理液)供給至處理單元。Therefore, a clean treatment liquid (preferably, a clean treatment liquid that does not contain particles) with less particulate content can be supplied to the processing unit.
第3態樣中,上述基板處理裝置包含:複數個上述機器,其等介裝於上述第2上游側部分;及複數個上述污染狀態計測裝置,其等與複數個上述機器下游區域一對一地對應,而介裝於上述第2上游側部分,該等複數個上述機器下游區域係與上述複數個上述機器一對一地對應。In a third aspect, the substrate processing apparatus includes: a plurality of the above-mentioned machines, which are interposed on the second upstream side part; and a plurality of the above-mentioned contamination state measuring devices, which are one-to-one with the plurality of the machines in the downstream area It corresponds to the ground, and is interposed in the second upstream side portion, and the plurality of the equipment downstream areas correspond to the plurality of the equipment on a one-to-one basis.
根據上述構成,污染狀態計測裝置對應設置於各機器下游區域。能夠根據複數個污染狀態計測裝置之計測值,特定出成為微粒產生源之機器。According to the above-mentioned configuration, the pollution state measuring device is installed in the downstream area of each device correspondingly. Based on the measured values of multiple pollution state measuring devices, the machine that becomes the source of particle generation can be identified.
第3態樣中,上述基板處理裝置進而包含:複數個排液配管,其等於針對每一上述機器下游區域而設置之複數個第5連接位置分支連接於上述複數個上述機器下游區域;及第3切換單元,其將上述第2上游側部分之較上述第5連接位置更靠上游側之處理液之目的地,於上述第2上游側部分之較上述第5連接位置更靠下游側、與連接於該機器下游區域之上述排液配管之間切換。In the third aspect, the substrate processing apparatus further includes: a plurality of discharge pipes, which are equal to a plurality of fifth connection positions provided for each of the downstream regions of the machine, branched and connected to the plurality of downstream regions of the machine; and 3 A switching unit that connects the destination of the processing liquid on the upstream side of the second upstream side portion than the fifth connection position to the downstream side of the second upstream side portion than the fifth connection position, and Switch between the above-mentioned drain piping connected to the downstream area of the machine.
根據上述構成,於各機器下游區域分支連接有排液配管。於特定出成為微粒產生源之機器之情形時,能夠經由排液配管而將處理液排出至與該機器對應之機器下游區域。該情形時,能夠將包含微粒之處理液經由與成為微粒產生源之機器對應之機器下游區域而直接排出。藉此,可抑制或防止微粒擴散於第2上游側部分之其他部分、內循環配管。According to the above configuration, the drain pipe is branched and connected to the downstream area of each device. When a device that is a source of particle generation is identified, the treatment liquid can be discharged to the downstream area of the device corresponding to the device through the liquid discharge pipe. In this case, the processing liquid containing the particles can be directly discharged through the downstream area of the machine corresponding to the machine that is the source of the particle generation. Thereby, it is possible to suppress or prevent the particles from diffusing in other parts of the second upstream part and the internal circulation pipe.
第3態樣中,上述基板處理裝置進而包含:複數個上述第3切換單元,其等與上述複數個排液配管一對一地對應;及控制裝置,其控制上述複數個上述第3切換單元;上述控制裝置於在上述機器下游區域流動之處理液中所含之微粒數超過臨限值之情形時,以如下方式控制與該排液配管對應之上述第3切換單元,即,將該機器下游區域內之處理液之目的地切換為上述排液配管,將上述第2上游側部分之較該機器下游區域更靠上游側之處理液排出至上述基板處理裝置外。In a third aspect, the substrate processing apparatus further includes: a plurality of the third switching units, which correspond one-to-one with the plurality of discharge pipes; and a control device that controls the plurality of the third switching units ; When the number of particles contained in the processing liquid flowing in the downstream area of the machine exceeds the threshold value, the control device controls the third switching unit corresponding to the discharge pipe in the following manner, that is, the machine The destination of the processing liquid in the downstream area is switched to the liquid discharge pipe, and the processing liquid on the upstream side of the second upstream portion of the machine downstream area is discharged to the outside of the substrate processing apparatus.
根據上述構成,於機器下游區域中流動之處理液中所含之微粒數(污染狀態計測裝置之計測值、或基於其之計算值)超過臨限值之情形時,判斷與該機器下游區域對應之機器為微粒產生源。而且,將包含微粒之處理液經由與該機器下游區域對應之排液配管而排出,藉此可抑制或防止微粒擴散於第2上游側部分之其他部分、內循環配管。According to the above configuration, when the number of particles contained in the processing liquid flowing in the downstream area of the machine (measured by the pollution state measuring device or calculated based on it) exceeds the threshold, it is judged to correspond to the downstream area of the machine The machine is the source of particle generation. Furthermore, by discharging the processing liquid containing the particles through the discharge pipe corresponding to the downstream area of the device, it is possible to suppress or prevent the particles from spreading to other parts of the second upstream portion and the internal circulation pipe.
第3態樣中,上述基板處理裝置進而包含:複數個上述第3切換單元,其等與上述複數個排液配管一對一地對應;及控制裝置,其控制上述複數個上述第3切換單元;上述控制裝置於在相互鄰接之2個上述機器下游區域流動之處理液中所含之微粒數彼此之差超過臨限值之情形時,以如下方式控制與該排液配管對應之上述第3切換單元,即,將微粒數較多之上述機器下游區域內之處理液之目的地切換為上述排液配管,將上述第2上游側部分之較該機器下游區域更靠上游側之處理液排出至上述基板處理裝置外。In a third aspect, the substrate processing apparatus further includes: a plurality of the third switching units, which correspond one-to-one with the plurality of discharge pipes; and a control device that controls the plurality of the third switching units ; When the difference between the number of particles contained in the processing liquid flowing in the downstream areas of the two adjacent devices exceeds the threshold, the control device controls the third corresponding to the discharge pipe in the following manner The switching unit, that is, switches the destination of the processing liquid in the downstream area of the machine with a large number of particles to the liquid discharge pipe, and discharges the processing liquid on the upstream side of the second upstream part than the downstream area of the machine To the outside of the above-mentioned substrate processing device.
根據上述構成,於相互鄰接之上述機器下游區域流動之處理液中所含之微粒數(污染狀態計測裝置之計測值、或基於其之計算值)彼此之差超過臨限值之情形時,判斷與微粒較數多之機器下游區域對應之機器為微粒產生源。而且,將包含微粒之處理液經由與該機器下游區域對應之排液配管而排出,藉此可抑制或防止微粒擴散於第2上游側部分之其他部分、內循環配管。According to the above configuration, when the difference between the number of particles (measured value of the pollution state measuring device or calculated value based on it) contained in the processing liquid flowing in the downstream area of the adjacent equipment exceeds the threshold value, it is judged The machine corresponding to the downstream area of the machine with a large number of particles is the source of particle generation. Furthermore, by discharging the processing liquid containing the particles through the discharge pipe corresponding to the downstream area of the device, it is possible to suppress or prevent the particles from spreading to other parts of the second upstream portion and the internal circulation pipe.
第3態樣中,上述基板處理裝置進而包含:旁路配管,其係連接上述機器下游區域與上述內循環配管者,且與上述第2上游側部分之較上述旁路配管之連接位置更靠上游側之部分、及上述內循環配管之較上述旁路配管之連接位置更靠下游側之部分一起形成使上述處理液箱內之處理液循環之旁路循環流路;及第4切換單元,其將上述第2上游側部分中較連接上述旁路配管之第6連接位置更靠上游側之處理液之目的地,於上述第2上游側部分之較上述第6連接位置更靠下游側、與該旁路配管之間切換。In the third aspect, the substrate processing apparatus further includes: a bypass piping that connects the downstream region of the machine and the internal circulation piping, and is closer to the second upstream portion than the bypass piping is connected The part on the upstream side and the part of the inner circulation piping that is further downstream than the connection position of the bypass piping together form a bypass circulation flow path that circulates the treatment liquid in the treatment liquid tank; and a fourth switching unit, It places the destination of the processing liquid on the upstream side of the second upstream side portion than the sixth connection position connected to the bypass piping to the downstream side of the second upstream side portion than the sixth connection position, Switch with the bypass piping.
根據上述構成,連接該機器下游區域與內循環配管之旁路配管分支連接於各機器下游區域。於特定出成為微粒產生源之機器之情形時,能夠將與該機器對應之機器下游區域內之處理液經由旁路配管而導引至內循環配管中。該情形時,能夠將包含微粒之處理液自與成為微粒產生源之機器對應之機器下游區域直接導引至內循環配管中。包含微粒之處理液藉由通過介裝於旁路配管之過濾器而潔淨化。藉此,可抑制或防止微粒擴散於第2上游側部分之其他部分、內循環配管。According to the above configuration, the bypass pipe connecting the downstream area of the device and the internal circulation pipe is branched and connected to the downstream area of each device. In the case of identifying the machine that is the source of particle generation, the processing liquid in the downstream area of the machine corresponding to the machine can be guided to the internal circulation piping via the bypass piping. In this case, the processing liquid containing the particles can be directly guided to the internal circulation piping from the downstream area of the machine corresponding to the machine that is the source of the particle generation. The treatment liquid containing particles is cleaned by passing through a filter installed in the bypass pipe. Thereby, it is possible to suppress or prevent the particles from diffusing in other parts of the second upstream part and the internal circulation pipe.
第3態樣中,上述基板處理裝置進而包含:複數個上述旁路配管;複數個上述第4切換單元,其等與上述複數個上述旁路配管一對一地對應;及控制裝置,其控制上述複數個上述第4切換單元;上述控制裝置於在上述機器下游區域流動之處理液中所含之微粒數超過臨限值之情形時,以將該機器下游區域內之處理液之目的地切換為上述旁路配管之方式,控制與該旁路配管對應之上述第4切換單元。In a third aspect, the substrate processing apparatus further includes: a plurality of the bypass pipes; a plurality of the fourth switching units corresponding to the plurality of bypass pipes one-to-one; and a control device that controls The plurality of the fourth switching units; the control device switches the destination of the processing liquid in the downstream area of the machine when the number of particles contained in the processing liquid flowing in the downstream area of the machine exceeds a threshold value It is the above-mentioned bypass piping method, which controls the above-mentioned fourth switching unit corresponding to the bypass piping.
根據上述構成,於機器下游區域中流動之處理液中所含之微粒數(污染狀態計測裝置之計測值、或基於其之計算值)超過臨限值之情形時,判斷與該機器下游區域對應之機器為微粒產生源。而且,將包含微粒之處理液經由與該機器下游區域對應之旁路配管而導引至內循環配管中,藉此可抑制或防止微粒擴散於第2上游側部分之其他部分、內循環配管。According to the above configuration, when the number of particles contained in the processing liquid flowing in the downstream area of the machine (measured by the pollution state measuring device or calculated based on it) exceeds the threshold, it is judged to correspond to the downstream area of the machine The machine is the source of particle generation. In addition, the processing liquid containing particles is guided to the internal circulation piping through the bypass piping corresponding to the downstream area of the device, thereby suppressing or preventing the particles from spreading to other parts of the second upstream portion and the internal circulation piping.
第3態樣中,上述基板處理裝置進而包含:複數個上述旁路配管;複數個上述第4切換單元,其等與上述複數個上述旁路配管一對一地對應;及控制裝置,其控制上述複數個上述第4切換單元;上述控制裝置於在相互鄰接之2個上述機器下游區域流動之處理液中所含之微粒數彼此之差超過臨限值之情形時,以將微粒數較多之上述機器下游區域內之處理液之目的地切換為上述旁路配管之方式,控制與該旁路配管對應之上述第4切換單元。In a third aspect, the substrate processing apparatus further includes: a plurality of the bypass pipes; a plurality of the fourth switching units corresponding to the plurality of bypass pipes one-to-one; and a control device that controls The plurality of the fourth switching units; the control device, when the difference between the number of particles contained in the processing liquid flowing in the downstream areas of the two adjacent devices exceeds a threshold, to increase the number of particles The destination of the processing liquid in the downstream area of the machine is switched to the bypass piping, and the fourth switching unit corresponding to the bypass piping is controlled.
根據上述構成,於相互鄰接之上述機器下游區域流動之處理液中所含之微粒數(污染狀態計測裝置之計測值、或基於其之計算值)彼此之差超過臨限值之情形時,判斷與微粒數較多之機器下游區域對應之機器為微粒產生源。而且,將包含微粒之處理液經由與該機器下游區域對應之旁路配管而導引至內循環配管,藉此可抑制或防止微粒擴散於第2上游側部分之其他部分、內循環配管。According to the above configuration, when the difference between the number of particles (measured value of the pollution state measuring device or calculated value based on it) contained in the processing liquid flowing in the downstream area of the adjacent equipment exceeds the threshold value, it is judged The machine corresponding to the downstream area of the machine with a large number of particles is the source of particle generation. In addition, the processing liquid containing particles is guided to the internal circulation piping through the bypass piping corresponding to the downstream area of the device, thereby suppressing or preventing the particles from spreading to other parts of the second upstream portion and the internal circulation piping.
第3態樣中,上述基板處理裝置進而包含:複數個上述旁路配管;複數個上述第4切換單元,其等與上述複數個上述旁路配管一對一地對應;及控制裝置,其控制上述複數個上述第4切換單元;上述複數個上述旁路配管係於與上述複數個上述旁路配管一對一地對應之複數個上述第6連接位置連接於上述第2上游側部分,上述控制裝置於自上述泵之驅動停止之狀態開始上述泵之驅動時,以如下方式控制上述複數個上述第4切換單元,即,以藥液流動之方向上之上述複數個上述第6連接位置之位置關係為基準,自上游側依序打開上述複數個上述旁路配管。In a third aspect, the substrate processing apparatus further includes: a plurality of the bypass pipes; a plurality of the fourth switching units corresponding to the plurality of bypass pipes one-to-one; and a control device that controls The plurality of the fourth switching unit; the plurality of the bypass pipes are connected to the second upstream side portion at a plurality of the sixth connection positions corresponding to the plurality of the bypass pipes one-to-one, the control When the device starts the drive of the pump from the state where the drive of the pump is stopped, it controls the plurality of the fourth switching units in the following manner, that is, the position of the plurality of the sixth connection positions in the direction in which the liquid medicine flows The relationship is based on the relationship, and the plurality of bypass pipes are sequentially opened from the upstream side.
於泵之驅動停止之狀態下,有時會進行機器更換、配管改造等。有時會於經更換之機器、經改造之配管上附著微粒。當於該狀態下藉由泵之驅動開始而使處理液之循環開始時,有經更換之機器、經改造之配管上附著之大量微粒擴散於整個外循環流路及/或內循環流路之全體區域之虞。When the pump drive is stopped, machine replacement, piping modification, etc. are sometimes carried out. Sometimes particles may adhere to the replaced equipment or modified piping. When the circulation of the treatment liquid is started by the driving of the pump in this state, a large amount of particles attached to the replaced equipment and modified piping diffuses in the entire outer circulation flow path and/or the inner circulation flow path. The whole area is in danger.
根據上述構成,於自泵之驅動停止之狀態開始泵之驅動時,自第6連接位置位於更靠上游側之配管依序打開旁路配管。因此,可階段地擴大處理液循環之流路。藉此,可藉由依序打開旁路配管而抑制或防止微粒向第2上游側部分之其他部分、內循環配管擴散,並且可使處理液於內循環流路循環。According to the above configuration, when the pump is driven from the state where the drive of the pump is stopped, the bypass pipe is sequentially opened from the pipe on the upstream side of the sixth connection position. Therefore, the flow path of the treatment liquid circulation can be expanded step by step. Thereby, by sequentially opening the bypass piping, it is possible to suppress or prevent the diffusion of particles to other parts of the second upstream portion and the internal circulation piping, and to allow the treatment liquid to circulate in the internal circulation flow path.
第3態樣中,上述基板處理裝置進而包含介裝於上述旁路配管中之過濾器。In the third aspect, the substrate processing apparatus further includes a filter inserted in the bypass pipe.
根據上述構成,藉由過濾器而自於各旁路配管流動之處理液中除去微粒,從而使處理液潔淨化。由於在各旁路配管中介裝有過濾器,因此可自包含微粒之處理液中高效地除去微粒。According to the above-mentioned configuration, particles are removed from the treatment liquid flowing through each bypass pipe by the filter, thereby making the treatment liquid clean. Since a filter is interposed in each bypass pipe, the particles can be efficiently removed from the processing liquid containing the particles.
第3態樣中,上述基板處理裝置於上述處理單元中之基板處理的執行中,於在上述機器下游區域流動之處理液中所含之微粒數超過臨限值之情形時,報告異常狀態,且於執行中之基板處理結束後,停止對上述處理單元供給處理液。In the third aspect, the substrate processing apparatus reports an abnormal state when the number of particles contained in the processing liquid flowing in the downstream area of the machine exceeds a threshold during the execution of the substrate processing in the processing unit, and And after the execution of the substrate processing is completed, the supply of processing liquid to the processing unit is stopped.
根據上述構成,於處理單元中之基板處理的執行中,於在上述機器下游區域流動之處理液中所含之微粒數(污染狀態計測裝置之計測值、或基於其之計算值)超過臨限值之情形時報告異常。而且,繼續進行執行中之基板處理,且於執行中之基板處理結束後,停止對基板處理單元供給處理液。According to the above configuration, during the execution of the substrate processing in the processing unit, the number of particles contained in the processing liquid flowing in the downstream area of the machine (measured value of the contamination state measuring device or calculated value based on it) exceeds the threshold Report an exception in case of value. Furthermore, the substrate processing in execution is continued, and after the substrate processing in execution is completed, the supply of the processing liquid to the substrate processing unit is stopped.
藉此,可不使產量極端降低地,抑制或防止對基板供給包含微粒之處理液。Thereby, it is possible to suppress or prevent the supply of the processing liquid containing particles to the substrate without extremely lowering the yield.
第1〜第3態樣中,上述泵包含伸縮泵,該伸縮泵包含:移動構件,其設置為可往返移動;及伸縮管,其一端固定於框體,另一端固定於上述移動構件;於將上述外循環配管及上述內循環配管之至少一者內之處理液排出至上述基板處理裝置外之情形時,上述控制裝置以使上述移動構件之行程時間增加之方式控制上述伸縮泵。In the first to third aspects, the above-mentioned pump includes a telescopic pump, the telescopic pump includes: a moving member configured to be reciprocally movable; and a telescopic tube, one end of which is fixed to the frame and the other end to the above-mentioned moving member; When discharging the processing liquid in at least one of the outer circulation pipe and the inner circulation pipe to the outside of the substrate processing apparatus, the control device controls the telescopic pump so as to increase the stroke time of the moving member.
伸縮泵有捕捉自上游側流來之微粒、於伸縮管之表面產生之微粒並將該微粒積存於伸縮管內之性質。而且,有因自伸縮泵一點點排出微粒而長期持續污染處理液之虞。The telescopic pump has the property of capturing particles flowing from the upstream side, particles generated on the surface of the telescopic tube and accumulating the particles in the telescopic tube. In addition, there is a possibility that the treatment liquid will continue to be contaminated for a long time due to the small particles discharged from the telescopic pump.
根據上述構成,藉由使伸縮泵之移動構件之行程時間較平常時更長,而將積存於伸縮管中之微粒排出至伸縮泵外。於將外循環配管及/或內循環配管內之處理液經由排液配管而排出至基板處理裝置外之情形時,以伸縮泵之移動構件之行程時間較平常時更長之方式驅動伸縮泵。藉此,可將伸縮泵內之微粒排出至基板處理裝置外。According to the above structure, by making the stroke time of the moving member of the telescopic pump longer than usual, the particles accumulated in the telescopic tube are discharged to the outside of the telescopic pump. When the processing liquid in the outer circulation pipe and/or the inner circulation pipe is discharged to the outside of the substrate processing apparatus through the liquid discharge pipe, the telescopic pump is driven in a way that the stroke time of the moving member of the telescopic pump is longer than usual. Thereby, the particles in the telescopic pump can be discharged to the outside of the substrate processing device.
又,藉由於伸縮泵之驅動開始時執行如此方法,可將包含微粒之處理液自伸縮泵、外循環流路、及內循環流路排出,其後,可使潔淨之處理液於外循環流路及/或內循環流路循環。藉此,能夠削減伸縮泵之驅動開始時所需之處理液量。In addition, by performing this method at the beginning of the drive of the telescopic pump, the processing liquid containing particles can be discharged from the telescopic pump, the outer circulation flow path, and the inner circulation flow path, and then the clean processing liquid can be circulated in the outer circulation. Road and/or internal circulation flow path circulation. Thereby, the amount of processing liquid required at the start of driving of the telescopic pump can be reduced.
第1〜第3態樣中,上述基板處理裝置亦可進而包含:加熱器,其介裝於上述第2上游側部分;及除氣部,其設置於上述加熱器之上游側及下游側之至少一者。In the first to third aspects, the substrate processing apparatus may further include: a heater interposed on the second upstream side portion; and a degassing section provided on the upstream side and the downstream side of the heater At least one.
於外循環流路及內循環流路中處理液之循環停止之情形時,有時積存於加熱器內之處理液發生氣化。有時會因處理液之氣化而導致加熱器內之壓力上升。When the circulation of the treatment liquid in the outer circulation flow path and the inner circulation flow path is stopped, the treatment liquid accumulated in the heater may be vaporized. Sometimes the pressure in the heater rises due to the vaporization of the treatment liquid.
根據上述構成,由於在加熱器之上游側及下游側之一者設置除氣部,因此即便於處理液氣化之情形時,產生之氣體亦會自除氣部流出至加熱器外,從而加熱器內之壓力不會上升或幾乎不上升。藉此,可抑制或防止外循環流路及內循環流路中處理液之循環停止之情形時加熱器內之壓力上升。According to the above configuration, since the degassing section is provided on one of the upstream and downstream sides of the heater, even when the treatment liquid is vaporized, the generated gas will flow out of the degassing section to the outside of the heater, thereby heating The pressure in the device does not rise or hardly rises. Thereby, it is possible to suppress or prevent the pressure increase in the heater when the circulation of the treatment liquid in the outer circulation flow path and the inner circulation flow path is stopped.
本發明之上述或進而其他目的、特徵及效果,可參照所附圖式並藉由以下所述之實施形態之說明而變得明瞭。The above and other objects, features, and effects of the present invention can be made clear by referring to the accompanying drawings and the description of the embodiments described below.
圖1係自上方觀察本發明之第1實施形態之基板處理裝置之示意圖。Fig. 1 is a schematic view of the substrate processing apparatus of the first embodiment of the present invention viewed from above.
基板處理裝置1係對半導體晶圓等圓板狀之基板W逐片進行處理之單片式裝置。基板處理裝置1具備:裝載埠LP,其保持收容基板W之載體C;複數個處理單元2,其利用處理液、處理氣體等處理流體對自裝載埠LP上之載體C搬送之基板W進行處理;搬送機器人,其於裝載埠LP上之載體C與處理單元2之間搬送基板W;及控制裝置3,其控制基板處理裝置1。The
搬送機器人包含:分度機器人IR,其相對於裝載埠LP上之載體C進行基板W之搬入及搬出;及中心機器人CR,其相對於複數個處理單元2進行基板W之搬入及搬出。分度機器人IR於裝載埠LP與中心機器人CR之間搬送基板W,中心機器人CR於分度機器人IR與處理單元2之間搬送基板W。中心機器人CR包含支撐基板W之手部H1,分度機器人IR包含支撐基板W之手部H2。The transfer robot includes: the indexing robot IR, which carries in and out of the substrate W with respect to the carrier C on the load port LP; and the central robot CR, which carries in and out of the substrate W with respect to the plurality of
基板處理裝置1包含收容後述吐出閥23等流體機器之複數個(例如4個)流體盒4。處理單元2及流體盒4配置於基板處理裝置1之外壁1a中,被基板處理裝置1之外壁1a覆蓋。收容後述藥液箱30等之藥液櫃5配置於基板處理裝置1之外壁1a之外。藥液櫃5可配置於基板處理裝置1之側方,亦可配置於設置有基板處理裝置1之無塵室之下(地下)。The
複數個處理單元2形成俯視下以包圍中心機器人CR之方式配置之複數個(例如4個)塔TW。中心機器人CR對於任一塔TW均可進行存取。各塔TW包含上下積層之複數個(例如3個)處理單元2。4個流體盒4分別對應於4個塔TW。藥液櫃5內之藥液經由任一流體盒4而供給至與該流體盒4對應之塔TW中所包含之所有處理單元2。The
圖2係水平觀察基板處理裝置1所具備之處理單元2之內部之示意圖。FIG. 2 is a schematic view of the inside of the
處理單元2包含:箱型之腔室6,其具有內部空間;旋轉夾盤10,其於腔室6內一面水平保持基板W一面使其繞通過基板W之中央部之鉛直的旋轉軸線A1旋轉;及筒狀之杯14,其接收自基板W排出之處理液。The
腔室6包含:箱型之隔壁8,其設置有供基板W通過之搬入搬出口;擋閘9,其將搬入搬出口加以開閉;及FFU 7(風扇-過濾器-單元),其於腔室6內形成由過濾器過濾之空氣即潔淨空氣之降流。中心機器人CR通過搬入搬出口而將基板W搬入至腔室6,且通過搬入搬出口將基板W自腔室6搬出。The
旋轉夾盤10包含:圓板狀之旋轉基座12,其被以水平姿勢保持;複數個夾盤銷11,其於旋轉基座12之上方以水平姿勢保持基板W;及旋轉馬達13,其藉由使夾盤銷11及旋轉基座12旋轉而使基板W繞旋轉軸線A1旋轉。旋轉夾盤10並不限定於使複數個夾盤銷11接觸於基板W之外周面之夾持式夾盤,亦可為藉由使非器件形成面即基板W之背面(下表面)吸附於旋轉基座12之上表面而水平保持基板W之真空式夾盤。The
杯14包含:筒狀之傾斜部14a,其向旋轉軸線A1朝斜上方延伸;圓筒狀之導引部14b,其自傾斜部14a之下端部(外端部)向下方延伸;及液體接收部14c,其形成向上打開之環狀槽。傾斜部14a包含具有較基板W及旋轉基座12大之內徑的圓環狀之上端。傾斜部14a之上端相當於杯14之上端。杯14之上端係於俯視下包圍基板W及旋轉基座12。The
處理單元2包含杯升降單元15,該杯升降單元15使杯14於上位置(圖2所示之位置)與下位置之間鉛直地升降,該上位置係杯14之上端較旋轉夾盤10保持基板W之保持位置位於更上方,該下位置係杯14之上端較保持位置位於更下方。當將處理液供給至基板W時,杯14配置於上位置。自基板W向外側飛散之處理液係由傾斜部14a接收後,藉由導引部14b而彙集於液體接收部14c內。The
處理單元2包含向被旋轉夾盤10保持之基板W之上表面朝下方吐出沖洗液之沖洗液噴嘴16。沖洗液噴嘴16係連接於介裝有沖洗液閥18之沖洗液配管17。處理單元2亦可具備噴嘴移動單元,該噴嘴移動單元使沖洗液噴嘴16於處理位置與退避位置之間水平地移動,該處理位置係將自沖洗液噴嘴16吐出之沖洗液供給至基板W,該退避位置係沖洗液噴嘴16於俯視下離開基板W。The
當打開沖洗液閥18時,沖洗液自沖洗液配管17供給至沖洗液噴嘴16,且自沖洗液噴嘴16吐出。沖洗液例如為純水(去離子水:DIW(Deionized water))。沖洗液並不限定於純水,亦可為碳酸水、電解離子水、氫水、臭氧水、氨水(例如0.1〜100 ppm)及稀釋濃度(例如,10〜100 ppm左右)之鹽酸水之任一者。When the rinsing
處理單元2包含吐出噴嘴21,該吐出噴嘴21具有向被旋轉夾盤10保持之基板W之上表面朝下方吐出藥液之吐出口21a。吐出噴嘴21係連接於介裝有吐出閥23之供給配管(吐出口連通配管)22。藉由吐出閥23而切換藥液相對於吐出噴嘴21之供給及供給停止。The
當打開吐出閥23時,自供給配管22對吐出噴嘴21供給藥液,且自吐出噴嘴21之吐出口21a吐出藥液。供給至吐出噴嘴21之藥液為IPA(isopropyl alcohol,異丙醇)等有機溶劑。又,供給至吐出噴嘴21之藥液亦可為SPM(硫酸與過氧化氫水之混合液)、硫酸等含硫酸之液體。此外,供給至吐出噴嘴21之藥液亦可為包含硝酸、鹽酸、氫氟酸、磷酸、乙酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如,TMAH:氫氧化四甲基銨等)、界面活性劑、及防腐蝕劑之至少一者之液體。亦可將除此以外之液體供給至吐出噴嘴21。When the
吐出閥23係於執行自供給配管22向吐出噴嘴21之藥液的供給之吐出執行狀態、與停止自供給配管22向吐出噴嘴21之藥液的供給之吐出停止狀態之間切換。吐出停止狀態亦可為閥體離開閥座之狀態。雖未圖示,但吐出閥23包含:閥主體,其包含包圍供藥液流動之內部流路之環狀的閥座;及閥體,其配置於內部流路,能夠相對於閥座而移動。吐出閥23可為利用氣壓變更開度之氣動閥(air operated valve),亦可為利用電力變更開度之電動閥。只要未特別說明,對於其他閥亦相同。The
處理單元2包含噴嘴移動單元26,該噴嘴移動單元26使吐出噴嘴21於處理位置與退避位置之間水平地移動,該處理位置係將自吐出噴嘴21之吐出口21a吐出之藥液供給至基板W之上表面,該退避位置係吐出噴嘴21於俯視下離開基板W。噴嘴移動單元26例如為使吐出噴嘴21繞擺動軸線A2水平地移動之回轉單元,該擺動軸線A2係在杯14周圍鉛直地延伸。The
圖3係表示基板處理裝置1之硬體之方塊圖。FIG. 3 is a block diagram showing the hardware of the
控制裝置3係電腦,該電腦包含電腦本體3a、及連接於電腦本體3a連接之周邊裝置3d。電腦本體3a包含執行各種命令之CPU 3b(central processing unit:中央處理裝置)、及記憶資訊之主記憶裝置3c。周邊裝置3d包含記憶程式P等資訊之輔助記憶裝置3e、自可移媒體RM讀取資訊之讀取裝置3f、及與主機電腦HC等其他裝置通信之通信裝置3g。The
控制裝置3係連接於顯示輸入裝置(選擇單元)3h。於使用者、維護負責人等操作者對基板處理裝置1輸入資訊時操作顯示輸入裝置3h。資訊顯示於顯示輸入裝置3h之畫面中。顯示輸入裝置3h例如可為觸摸面板式之顯示裝置。輸入裝置及顯示裝置亦可相互分離設置。輸入裝置可為鍵盤、指向裝置、及觸控面板之任一者,亦可為除此以外之裝置。The
CPU 3b執行輔助記憶裝置3e中記憶之程式P。輔助記憶裝置3e內之程式P可預先安裝於控制裝置3,亦可通過讀取裝置3f而自可移媒體RM發送至輔助記憶裝置3e,亦可自主機電腦HC等外部裝置通過通信裝置3g而發送至輔助記憶裝置3e。The
輔助記憶裝置3e及可移媒體RM係即便不供給電力亦可保持記憶之非揮發性記憶體。輔助記憶裝置3e例如為硬碟驅動器等磁性記憶裝置。可移媒體RM例如為緊密光碟等光碟或記憶體卡等半導體記憶體。可移媒體RM係記錄有程式P之電腦可讀取之記錄媒體之一例。可移媒體RM係非暫時性之有形記錄媒體(non-transitory tangible media)。The auxiliary memory device 3e and the removable medium RM are non-volatile memory that can retain memory even if power is not supplied. The auxiliary memory device 3e is, for example, a magnetic memory device such as a hard disk drive. The removable medium RM is, for example, an optical disc such as a compact disc or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable recording medium on which the program P is recorded. Removable media RM is a non-transitory tangible media (non-transitory tangible media).
輔助記憶裝置3e記憶複數個配方。配方係規定基板W之處理內容、處理條件、及處理程序之資訊。複數個配方於基板W之處理內容、處理條件、及處理程序之至少一者互不相同。控制裝置3以根據由主機電腦HC指定之配方對基板W進行處理之方式控制基板處理裝置1。控制裝置3以執行以下所述之基板處理例之方式進行程式設計。The auxiliary memory device 3e memorizes a plurality of recipes. The recipe specifies the processing content, processing conditions, and processing procedures of the substrate W. At least one of the processing content, processing conditions, and processing procedures of the substrate W for the plurality of recipes is different from each other. The
圖4係用以說明由基板處理裝置1進行之基板W之處理之一例之步驟圖。以下,參照圖1、圖2及圖4。FIG. 4 is a step diagram for explaining an example of the processing of the substrate W by the
當由基板處理裝置1對基板W進行處理時,進行將基板W搬入至腔室6內之搬入步驟(圖4之步驟S1)。When the substrate W is processed by the
具體而言,於吐出噴嘴21自基板W之上方退避,且杯14位於下位置之狀態下,中心機器人CR(參照圖1)一面利用手部H2支撐基板W,一面使手部H2進入腔室6內。其後,中心機器人CR以基板W之正面朝上之狀態將手部H2上之基板W置於旋轉夾盤10之上。旋轉馬達13於藉由夾盤銷11固持基板W後,使基板W開始旋轉。中心機器人CR係於將基板W置於旋轉夾盤10上之後,使手部H2自腔室6之內部退避。Specifically, in the state where the
接下來,進行將藥液供給至基板W之藥液供給步驟(圖4之步驟S2)。Next, the chemical liquid supply step of supplying the chemical liquid to the substrate W is performed (step S2 in FIG. 4).
具體而言,噴嘴移動單元26使吐出噴嘴21移動至處理位置,杯升降單元15使杯14上升至上位置。其後,打開吐出閥23,吐出噴嘴21開始吐出藥液。吐出噴嘴21吐出藥液時,噴嘴移動單元26可使吐出噴嘴21於自吐出噴嘴21之吐出口21a吐出之藥液碰撞於基板W之上表面中央部之中央處理位置、與自吐出噴嘴21吐出之藥液碰撞於基板W之上表面外周部之外周處理位置之間移動,亦可以藥液之落液位置位於基板W之上表面中央部之方式使吐出噴嘴21靜止。Specifically, the
自吐出噴嘴21吐出之藥液碰撞於基板W之上表面後,沿旋轉之基板W之上表面向外側流動。藉此,形成覆蓋基板W之上表面全域之藥液之液膜,而將藥液供給至基板W之上表面全域。尤其,於噴嘴移動單元26使吐出噴嘴21於中央處理位置與外周處理位置之間移動之情形時,利用藥液之落液位置掃描基板W之上表面全域,因此藥液均勻供給至基板W之上表面全域。藉此,基板W之上表面被均勻處理。當打開吐出閥23後經過既定時間時,關閉吐出閥23,停止自吐出噴嘴21吐出藥液。其後,噴嘴移動單元26使吐出噴嘴21移動至退避位置。After the chemical liquid discharged from the
接下來,進行將作為沖洗液之一例之純水供給至基板W之上表面之沖洗液供給步驟(圖4之步驟S3)。Next, a rinse liquid supply step of supplying pure water as an example of the rinse liquid to the upper surface of the substrate W is performed (step S3 in FIG. 4).
具體而言,打開沖洗液閥18,沖洗液噴嘴16開始吐出純水。落液於基板W之上表面之純水沿旋轉之基板W之上表面向外側流動。基板W上之藥液被自沖洗液噴嘴16吐出之純水沖洗。藉此,形成覆蓋基板W之上表面全域之純水之液膜。當打開沖洗液閥18後經過既定時間時,關閉沖洗液閥18,停止吐出純水。Specifically, the rinsing
接下來,進行藉由基板W之高速旋轉而使基板W乾燥之乾燥步驟(圖4之步驟S4)。Next, a drying step of drying the substrate W by high-speed rotation of the substrate W (step S4 in FIG. 4) is performed.
具體而言,旋轉馬達13使基板W於旋轉方向加速,使基板W以較藥液供給步驟及沖洗液供給步驟中之基板W之旋轉速度更大之高旋轉速度(例如數千rpm)旋轉。藉此,自基板W除去液體,從而基板W乾燥。當基板W開始高速旋轉後經過既定時間時,旋轉馬達13停止旋轉。藉此,停止基板W之旋轉。Specifically, the
接下來,進行自腔室6搬出基板W之搬出步驟(圖4之步驟S5)。Next, the unloading step of unloading the substrate W from the chamber 6 (step S5 in FIG. 4) is performed.
具體而言,杯升降單元15使杯14下降至下位置。其後,中心機器人CR(參照圖1)使手部H2進入腔室6內。中心機器人CR於複數個夾盤銷11解除對基板W之固持後,利用手部H2支撐旋轉夾盤10上之基板W。其後,中心機器人CR一面利用手部H2支撐基板W,一面使手部H2自腔室6之內部退避。藉此,自腔室6搬出處理完畢之基板W。Specifically, the
圖5係表示基板處理裝置1之藥液供給裝置CS1之示意圖。圖6係用以說明泵37之構成之圖。圖7係用以說明過濾器39之構成之圖。圖5中,以一點鏈線表示流體盒4,以兩點鏈線表示藥液櫃5。被一點鏈線包圍之區域中配置之構件係配置於流體盒4內,被兩點鏈線包圍之區域中配置之構件係配置於藥液櫃5內。FIG. 5 is a schematic diagram showing the chemical liquid supply device CS1 of the
基板處理裝置1之藥液供給裝置CS1包含:藥液箱(處理液箱)30,其儲存供給至基板W之藥液;及複數個循環配管,其使藥液箱30內之藥液循環。The chemical liquid supply device CS1 of the
如圖5所示,複數個循環配管包含:第1循環配管(外循環配管)31,其上游端31a及下游端31b連接於藥液箱30;及第2循環配管(內循環配管)32,其係分支連接於第1循環配管31,且使第1循環配管31內之藥液返回至藥液箱30之返回配管。第1循環配管31包含:上游側部分(第2上游側部分)33,其較連接有第2循環配管32之連接位置P2(第2連接位置)更靠上游側;及下游側部分(第2下游側部分)34,其較連接位置P2更靠下游側。圖5之例中,由藥液箱30與第1循環配管31形成使藥液箱30內之藥液循環之第1循環流路C1。圖5之例中,由藥液箱30、上游側部分33及第2循環配管32形成使藥液箱30內之藥液循環之第2循環流路C2。圖5之例中,第1循環流路C1不僅配置於藥液櫃5中,而且亦配置於流體盒4中,第2循環流路C2僅配置於藥液櫃5中。As shown in FIG. 5, the plurality of circulation pipes include: a first circulation pipe (outer circulation pipe) 31 whose
第1實施形態中,第1循環流路C1構成外循環流路,第2循環流路C2構成於外循環流路之內側循環之內循環流路。In the first embodiment, the first circulation channel C1 constitutes an outer circulation channel, and the second circulation channel C2 constitutes an inner circulation channel that circulates inside the outer circulation channel.
圖5之例中,第1循環流路C1構成延伸至流體盒4之外循環流路。第1循環流路C1對複數個處理單元2各者供給藥液。具體而言,複數個供給配管(吐出口連通配管)22連接於第1循環配管31,且自第1循環配管31分支。複數個供給配管22一對一地對應於複數個處理單元2。自第1循環流路C1供給至供給配管22之藥液係被供給至與該供給配管22對應之處理單元2。In the example of FIG. 5, the first circulation channel C1 constitutes a circulation channel that extends to the outside of the
又,圖5之例中,第1循環配管31包含:共通配管35,其自藥液箱30向下游延伸;及複數個個別配管36,其等自共通配管35分支。共通配管35之上游端相當於第1循環配管31之上游端。共通配管35之上游端連接於藥液箱30。各個別配管36之下游端相當於第1循環配管31之下游端。各個別配管36之下游端連接於藥液箱30。第1循環配管31之上游側部分33包含於共通配管35。連接位置P2設定於共通配管35。因此,第2循環配管32連接於共通配管35。第1循環配管31之下游側部分34包含共通配管35之一部分與複數個個別配管36。In the example of FIG. 5, the
複數個個別配管36分別對應於複數個塔TW。圖5表示1個個別配管36之整體與剩餘3個個別配管36之一部分(上游端部與下游端部)。圖5表示相同之塔TW中所包含之3個處理單元2。與相同之塔TW中所包含之3個處理單元2對應之3個供給配管22,連接於相同之個別配管36。換言之,供給配管22於第1循環配管31中分支連接於被設定在較連接位置P2更靠下游側之連接位置(第1連接位置)P1。The plurality of
於各個別配管36中介裝有用以將該個別配管36開閉之第1循環閥40。在關閉第1循環閥40之狀態下,於共通配管35中流動之藥液不會被導引至各個別配管36中(即,於上游側部分33中流動之藥液不會被導引至下游側部分34)。而且,藉由打開第1循環閥40,於共通配管35中流動之藥液被導引至各個別配管36中(即,於上游側部分33中流動之藥液被導引至下游側部分34)。A
如圖5所示,基板處理裝置1之藥液供給裝置CS1包含:泵37,其將藥液箱30內之藥液送至第1循環配管31;加熱器38,其對藥液箱30內之藥液進行加熱,而調整藥液箱30內之藥液之溫度;及過濾器39,其自於第1循環配管31流動之藥液中除去異物。泵37、加熱器38及過濾器39係自藥液箱30側依序介裝於上游側部分33。加熱器38對上游側部分33中流動之藥液進行加熱。雖未圖示,但亦可於上游側部分33介裝流量計及溫度感測器之至少一者。雖未圖示,但亦可於供給配管22介裝流量計、流量調整單元及加熱器之至少一者。雖未圖示,但亦可於連接位置P1之下游側及後述連接位置P3之上游側介裝流量計、流量調整單元。As shown in FIG. 5, the chemical solution supply device CS1 of the
泵37例如為伸縮泵。該情形時,如圖6所示,於泵37內劃分形成有一側泵室44與另一側泵室45。一側泵室44由一方之缸頭41、泵頭42及介存於其等之間之缸筒43形成。另一側泵室45由另一方之缸頭41、泵頭42及介存於其等之間之缸筒43形成。The
泵37進而包含:大致圓板狀之2個移動構件46,其等配置於一側泵室44及另一側泵室45內;及樹脂製之2個伸縮管47,其等成為伸縮自如。各伸縮管47之一端連接於對應之移動構件46,各伸縮管47之另一端固定於泵頭(框體)42。於一側泵室44內,由伸縮管47而相互地隔離形成有伸縮管47外側之一側空氣室48、與伸縮管47內側之一側藥液室49。又,於另一側泵室45內,由伸縮管47而相互地隔離形成有伸縮管47外側之另一側空氣室50、與伸縮管47內側之另一側藥液室51。於泵頭42設置有:一側藥液導入埠55,其用以向一側藥液室49內導入藥液;另一側藥液導入埠56,其用以向另一側藥液室51內導入藥液;及藥液導出埠57,其用以自一側藥液室49及另一側藥液室51內導出藥液。The
於一側空氣室48開放之狀態下,對另一側空氣室50供給空氣,當另一側空氣室50內之氣壓升高時,另一側泵室45內之移動構件46藉由該氣壓而向泵頭42側移動。藉此,另一側藥液室51之容積縮小,將另一側藥液室51內之藥液自藥液導出埠57送出。一側泵室44內之移動構件46與此連動地向缸頭41側移動。藉此,一側藥液室49之容積擴大,將藥液自一側藥液導入埠55吸入至一側藥液室49中。When one side of the
反之,於另一側空氣室50開放之狀態下,對一側空氣室48供給空氣,當一側空氣室48內之氣壓升高時,一側泵室44內之移動構件46藉由該氣壓而向泵頭42側移動。藉此,一側藥液室49之容積縮小,將一側藥液室49內之藥液自藥液導出埠57送出。另一側泵室45內之移動構件46與此連動地向缸頭41側移動。藉此,另一側藥液室51之容積擴大,將藥液自另一側藥液導入埠56吸入至另一側藥液室51中。Conversely, when the
如此,移動構件46於缸頭41與泵頭42之間往返移動,藉此可將藥液自藥液導出埠57送出,並將來自藥液箱30之藥液送出至第1循環配管31中。In this way, the moving
泵37於其驅動狀態下,不管基板處理裝置1之動作狀態之類型(就緒狀態、或循環停止空轉狀態、或循環空轉狀態),均將藥液箱30內之藥液以固定壓力持續送至第1循環配管31中。基板處理裝置1亦可具備加圧裝置來代替泵37,該加圧裝置藉由使藥液箱30內之氣壓上升,而將藥液箱30內之藥液壓出至第1循環配管31中。泵37及加圧裝置均係將藥液箱30內之藥液送至第1循環配管31中之泵之一例。When the
如圖5所示,加熱器38係產生焦耳熱之加熱器。於加熱器38之上游側及下游側之至少一者設置有除氣部(未圖示)。於在第1循環流路C1及第2循環流路C2之兩者中藥液之循環停止之情形時,有時加熱器38內積存之藥液會氣化。然而,由於在加熱器38之上游側及下游側之一者設置有除氣部,故而即便於藥液氣化之情形時,產生之氣體亦會自除氣部流出至加熱器38外,加熱器38內之壓力不會上升或幾乎不上升。藉此,可抑制或防止於第1循環流路C1及第2循環流路C2之兩者中藥液之循環停止之情形時加熱器38內之壓力上升。As shown in FIG. 5, the
如圖7所示,過濾器39包含過濾器本體61、及於內部保持過濾器本體61之殼體62。殼體62可進行開閉,過濾器本體61可拆卸地安裝於殼體62。過濾器本體61例如為一端封閉之筒狀。殼體62之內部被過濾器本體61區隔為一次側空間(過濾器39之一次側)X1與二次側空間(過濾器39之二次側)X2。一次側空間X1為過濾器本體61之內部空間。二次側空間X2為殼體62之內部空間中之過濾器本體61外側之空間。As shown in FIG. 7, the
過濾器本體61例如為標準封閉型之過濾器。過濾器39對在一次側空間X1內流通之藥液進行過濾,而自該藥液中除去微粒。於過濾器本體61之全域形成有複數個孔63,該等孔63係自過濾器本體61之內表面延伸至過濾器本體61之外表面,且於過濾器本體61之厚度方向貫通過濾器本體61。自過濾器本體61之厚度方向觀察時,孔63例如為正方形狀,但亦可為,自過濾器本體61之厚度方向觀察時,呈正方形狀以外之多角形狀、圓形狀、橢圓形狀。The
藥液自一次側空間X1向二次側空間X2流動,並通過過濾器本體61之孔63。於一次側空間X1中流動之藥液中所含之微粒係於通過孔63時,被劃分孔63之過濾器本體61的壁面吸附,從而被捕捉於孔63內。藉此,自藥液中除去微粒。The liquid medicine flows from the primary space X1 to the secondary space X2 and passes through the
在該類型之過濾器39中,過濾器39之微粒捕捉能力會隨著對過濾器39施加之壓力之變動而變化。對過濾器39施加有壓力之狀態下,相較於不對過濾器39施加壓力之狀態,能夠捕捉更小之微粒。而且,隨著對過濾器39施加之壓力增大,能夠捕捉進而更小之微粒。反之,當對過濾器39施加之壓力減少時,能夠捕捉之微粒變大,過濾器39之微粒捕捉能力降低。即,過濾器39之微粒捕捉能力根據對過濾器39施加之壓力之變動而變化。於過濾器39之微粒捕捉能力降低之情形時,有於捕捉能力降低之前被過濾器39捕捉之微粒自過濾器39向二次側流出之虞。In this type of
又,該類型過濾器39中,若因持續使用過濾器39導致過濾器39捕捉之微粒數慢慢地增多時,過濾器39慢慢地堵塞,從而過濾器39之吸附性能慢慢地降低。藉此,過濾器39之微粒捕捉能力降低。In this type of
如圖5及圖7所示,基板處理裝置1之藥液供給裝置CS1進而具備:除氣配管64,其用以除去過濾器39內之一次側之氣泡(空氣);及排液配管66,其用以排出過濾器39內之液體。除氣配管64係為了除去導致產生微粒之過濾器39內之氣泡而使用。具體而言,於過濾器39之一次側(一次側空間X1內)連接有除氣配管64及排液配管66之一端(上游端)。除氣配管64之另一端係連接於藥液箱30。如圖5所示,於除氣配管64中介裝有用以將除氣配管64加以開閉之除氣閥65。排液配管66之另一端係連接於排液箱80。於排液配管66中介裝有用以將排液配管66加以開閉之排液閥67。As shown in FIGS. 5 and 7, the chemical liquid supply device CS1 of the
如圖5所示,基板處理裝置1之藥液供給裝置CS1包含:第2循環閥(內循環閥)70,其介裝於第2循環配管32中;及壓力調整單元,其對在第1循環配管31之上游側部分33中流動之藥液之壓力進行調整。壓力調整單元係對第2循環配管32之開度進行調整之開度調整單元。開度調整單元介裝於第2循環配管32中。圖5之例中,開度調整單元為調節器71。調節器71例如為電動氣動調節器。開度調整單元並不限定於調節器71,亦可為洩放閥、電動針閥等電動閥。又,開度調整單元亦可與第2循環閥70一體化。As shown in FIG. 5, the chemical liquid supply device CS1 of the
壓力調整單元進而具備對上游側部分33內之藥液之壓力進行檢測的壓力感測器72。壓力感測器72於上游側部分33上之既定檢測位置P11檢測上游側部分33內之藥液之壓力。基板處理裝置1之循環空轉狀態下,於過濾器39中流動之藥液之壓力大致等於在檢測位置P11之藥液壓力。因此,藉由壓力感測器72而於檢測位置P11檢測上游側部分33內之藥液之壓力,可視為實質上等於檢測在過濾器39中流動之藥液之壓力。檢測位置P11如圖5所示可為過濾器39之上游,亦可為過濾器39之下游。The pressure adjusting unit further includes a
如圖5所示,基板處理裝置1之藥液供給裝置CS1進而包含用以積存自藥液箱30排出之藥液之排液箱80。於藥液箱30連接有向排液箱80延伸之排出配管81。於排出配管81之中途部介裝有將排出配管81加以開閉之排出閥82。當排出藥液箱30內之藥液時,打開排出閥82。藉此,藥液箱30內之藥液自藥液箱30被引導至排液箱80中並儲存於排液箱80中。As shown in FIG. 5, the chemical liquid supply device CS1 of the
於排液箱80連接有排液配管83。排液箱80中儲存之藥液係藉由打開介裝於排液配管83中之未圖示之閥而送至基板處理裝置1外之排液處理設備,於該排液處理設備中進行排液處理。A
分支排液配管(排液配管)85之一端分支連接於各個別配管36之下游端附近(即,第1循環配管31之下游端附近)。分支排液配管85之另一端係連接於排液箱80。於分支排液配管85之中途部介裝有用以將分支排液配管85加以開閉之分支排液閥86。於各個別配管36中較分支排液配管85之連接位置(第3連接位置)P3更靠下游側,介裝有用以將個別配管36加以開閉之返還閥89。One end of the branched liquid discharge pipe (drain pipe) 85 is branched and connected to the vicinity of the downstream end of each individual pipe 36 (that is, the vicinity of the downstream end of the first circulation pipe 31). The other end of the
分支排液閥86與返還閥89構成第1切換單元。第1切換單元將第1循環配管31之下游側部分34中較連接位置P3更靠上游側之藥液之目的地於下游側部分34中之較連接位置P3更靠下游側、與分支排液配管(排液配管)85之間切換。第1切換單元亦可具備三向閥而代替分支排液閥86及返還閥89,或除分支排液閥86及返還閥89外再具備三向閥。The
藉由於關閉分支排液閥86之狀態下打開返還閥89,而將個別配管36中於較分支排液配管85之連接位置P3更靠上游側流動之藥液,經由個別配管36中之較連接位置P3更靠下游側之部分而導引至藥液箱30中。另一方面,藉由於關閉返還閥89之狀態下打開分支排液閥86,而將個別配管36中於較分支排液配管85之連接位置P3更靠上游側流動之藥液,經由分支排液配管85而導引至排液箱80。By opening the
如圖5所示,基板處理裝置1之藥液供給裝置CS1進而包含:藥液補充配管87,其將新藥液(新液)、即未使用之藥液補充至藥液箱30;及藥液補充閥88,其用以將藥液補充配管87加以開閉。As shown in FIG. 5, the chemical liquid supply device CS1 of the
基板處理裝置1之動作狀態包含:就緒狀態(可執行狀態,即運轉狀態),其係可於處理單元2中執行處理之動作狀態;及空轉狀態(待機狀態),其係不可於處理單元2中執行處理(未完成準備)之動作狀態。當藉由啟動基板處理裝置1而開始向基板處理裝置1供給電力時,基板處理裝置1成為空轉狀態。其後,藉由進行就緒化操作,基板處理裝置1向就緒狀態轉移。於基板處理裝置1之就緒狀態下,能夠利用基板處理裝置1實現基板處理動作(批次處理)。The operation state of the
於需要對基板處理裝置1實施維護作業之情形時(錯誤時之檢查、機器更換、消耗品更換等),維護負責人使就緒狀態之基板處理裝置1朝空轉狀態轉移。然後,維護負責人對空轉狀態之基板處理裝置1進行維護作業。即,僅可於基板處理裝置1之空轉狀態下對基板處理裝置1進行維護作業。而且,藉由於維護作業結束後進行就緒化操作,基板處理裝置1之動作狀態朝就緒狀態轉移。When it is necessary to perform maintenance work on the substrate processing apparatus 1 (inspection at the time of error, replacement of equipment, replacement of consumables, etc.), the maintenance person in charge shifts the
就藥液供給裝置CS1而言,基板處理裝置1之就緒狀態係能夠對處理單元2供給藥液之狀態。就藥液供給裝置CS1而言,基板處理裝置1之空轉狀態係無法對處理單元2供給藥液(未完成準備)之動作狀態。Regarding the chemical liquid supply device CS1, the ready state of the
基板處理裝置1之空轉狀態包含:循環停止空轉狀態(循環停止待機狀態),其係於第1循環流路C1及第2循環流路C2之兩者中停止藥液之循環;及循環空轉狀態(循環待機狀態),其係於第1循環流路C1中停止藥液之循環,並於第2循環流路C2中繼續藥液之循環。即,對基板處理裝置1準備兩種空轉狀態。於任一空轉狀態下,均維持對基板處理裝置1之電力供給。因此,可於基板處理裝置1之空轉狀態下,進行基板處理裝置1之各個驅動零件之維護所需之動作(搬送機器人等之動作)等。The idling state of the
圖8係表示顯示輸入裝置3h中之維護畫面90之一例之圖。FIG. 8 is a diagram showing an example of the
於在基板處理裝置1中進行維護作業之情形時,維護負責人操作顯示輸入裝置3h中之維護畫面90。如圖8所示,維護畫面90中顯示有用於基板處理裝置1中之基板搬送處理之停止操作之按鈕、為了恢復就緒狀態而操作之系統再開按鈕91、用於基板處理裝置1之停機(空轉狀態化)操作之按鈕、及緊急停止按鈕92。In the case of performing maintenance work in the
用於基板處理裝置1中之基板搬送處理之停止操作之按鈕包含搬送停止按鈕93與循環停止按鈕94。當於基板處理裝置1之就緒狀態下操作搬送停止按鈕93時,執行基板搬送中之中心機器人CR、分度機器人IR立即停止動作。當操作循環停止按鈕94時,於該時點下執行中之基板搬送處理結束後,中心機器人CR、分度機器人IR停止動作。The buttons used for the stop operation of the substrate transport process in the
用於基板處理裝置1之停機操作之按鈕包含:循環停止空轉按鈕95,其用以使基板處理裝置1轉移至循環停止空轉狀態;及循環空轉按鈕96,其用以使基板處理裝置1轉移至循環空轉狀態。當於基板處理裝置1之就緒狀態下操作循環停止空轉按鈕95時,基板處理裝置1轉移至循環停止空轉狀態。當於基板處理裝置1之就緒狀態下操作循環空轉按鈕96時,基板處理裝置1轉移至循環空轉狀態。即,藉由維護負責人操作維護畫面90,而執行循環空轉狀態及循環停止空轉狀態之選擇。The buttons used for the shutdown operation of the
圖9係用以說明就緒狀態之藥液供給裝置CS1中之藥液之流動之圖。FIG. 9 is a diagram for explaining the flow of the liquid medicine in the liquid medicine supply device CS1 in the ready state.
於圖9之下側部分描繪有2個閥與2個泵。2個閥中之上側的閥(一部分塗黑之閥)係表示閥打開之狀態(圖9中標記為「打開」),下側的閥係表示閥關閉之狀態(圖9中標記為「關閉」)。2個泵中之上側的泵(一部分塗黑之泵)係表示泵輸送液體之狀態(圖9中標記為「接通」),下側的泵係表示泵未輸送液體之狀態(圖9中標記為「斷開」)。此於圖10、圖11、圖14、圖16、圖19、圖20、圖27〜圖29中亦相同。Two valves and two pumps are depicted in the lower part of FIG. 9. Among the two valves, the upper valve (part of the black-painted valve) indicates the state of valve open (marked as "open" in Figure 9), and the lower valve indicates the state of valve closed (marked as "closed in Figure 9"). "). Of the two pumps, the upper pump (part of the black-painted pump) indicates the state of the pump delivering liquid (marked as "on" in Figure 9), and the lower pump indicates the state of the pump not delivering liquid (Figure 9 Marked as "disconnected"). This is the same in FIG. 10, FIG. 11, FIG. 14, FIG. 16, FIG. 19, FIG. 20, and FIG. 27 to FIG. 29.
基板處理裝置1之就緒狀態下,泵37處於驅動狀態,打開第2循環閥70及第1循環閥40。該狀態下,打開除氣閥65,且關閉排液閥67。進而,該狀態下,打開返還閥89,且關閉分支排液閥86。該狀態下,關閉排出閥82。In the ready state of the
基板處理裝置1之就緒狀態下,藥液箱30內之藥液藉由泵37而送至第1循環配管31之上游側部分33,並通過連接位置P2。藉此,藥液自上游側部分33流動至下游側部分34,並自下游側部分34返回至藥液箱30。該期間,藉由過濾器39除去藥液中所含之異物。又,藉由加熱器38而以成為由配方規定之溫度之方式將藥液箱30內之藥液加熱並將其送入至下游側部分34。藉此,藥液箱30內之藥液維持著較處理單元2內之環境溫度(例如20〜26℃)更高之固定溫度並被送入至下游側部分34。In the ready state of the
第1循環配管31之上游側部分33內之藥液係自連接位置P2流入至下游側部分34,並且自連接位置P2流入至第2循環配管32。流入至第2循環配管32之藥液係自第2循環配管32之下游端返回至藥液箱30。The medical solution in the
即,就緒狀態下,藥液於第1循環流路C1中循環,且藥液於第2循環流路C2中循環(雙循環狀態)。That is, in the ready state, the chemical liquid circulates in the first circulation channel C1, and the chemical liquid circulates in the second circulation channel C2 (double-circulation state).
若於基板處理裝置1之就緒狀態下,使第2循環流路C2中之藥液循環停止,則有藥液不於第2循環配管32中移動,而微粒積存於第2循環配管32中之虞。為了防止如此之微粒積存,於基板處理裝置1之就緒狀態下不使第2循環流路C2中之藥液循環停止。If the circulation of the chemical solution in the second circulation flow path C2 is stopped in the ready state of the
圖10係用以說明循環停止空轉狀態之藥液供給裝置CS1中之藥液之流動之圖。FIG. 10 is a diagram for explaining the flow of the liquid medicine in the liquid medicine supply device CS1 in the circulating stop idling state.
於基板處理裝置1之循環停止空轉狀態下,泵37處於驅動停止狀態。關閉第2循環閥70及第1循環閥40。亦關閉其他閥。In the cycle stop idling state of the
於循環停止空轉狀態下,停止泵37之驅動,因此於第1循環流路C1及第2循環流路C2之兩者中,藥液之循環停止。而且,於循環停止空轉狀態下,藥液滯留於第1循環流路C1及第2循環流路C2之中途部。具體而言,藥液滯留於上游側部分33之全域、下游側部分34中之第1循環閥40之上游側、及第2循環配管32中之第2循環閥70之上游側。當然,藥液亦滯留於泵37、加熱器38、過濾器39中。In the circulation stop idling state, the driving of the
此時,過濾器39之二次側空間X2中滯留之藥液中大量包含微粒之可能性較高。認為其原因係如下。即,藉由泵37之驅動停止,過濾器39中之藥液不移動,而不對過濾器39施加藥液之壓力。因此,被過濾器39捕捉之微粒流出至二次側空間X2中,並積存於二次側空間X2中滯留之藥液中。At this time, there is a high possibility that a large amount of particles are contained in the liquid medicine retained in the secondary space X2 of the
尤其,於藥液為含硫酸液之情形時,因配管內之藥液之氧化而產生之微粒量變多。於藥液為IPA之情形時,因配管(樹脂配管)之溶出而產生之微粒量亦變多。因此,於藥液為含硫酸液、IPA之情形時,滯留於過濾器39之二次側空間X2之藥液中所含之微粒量進而變得更多。In particular, when the chemical liquid is a sulfuric acid liquid, the amount of particles generated by the oxidation of the chemical liquid in the pipe increases. When the chemical solution is IPA, the amount of particles generated by the elution of the piping (resin piping) also increases. Therefore, when the chemical liquid is a sulfuric acid liquid or IPA, the amount of particulates contained in the chemical liquid retained in the secondary space X2 of the
圖11係用以說明循環空轉狀態之藥液供給裝置CS1中之藥液之流動之圖。FIG. 11 is a diagram for explaining the flow of the liquid medicine in the liquid medicine supply device CS1 in the circulating idling state.
於藥液供給裝置CS1之循環空轉狀態下,泵37處於驅動狀態。於該狀態下,打開第2循環閥70,且關閉第1循環閥40。於該狀態下,打開除氣閥65,且關閉排液閥67。關閉其他閥。In the circulating idling state of the chemical liquid supply device CS1, the
上游側部分33內之藥液不自連接位置P2流入至下游側部分34,而是僅流入至第2循環配管32。流入至第2循環配管32之藥液係自第2循環配管32之下游端返回至藥液箱30。The chemical liquid in the
即,於循環空轉狀態下,藥液不於第1循環流路C1中循環,且藥液於第2循環流路C2中循環(一方循環狀態)。That is, in the circulating idling state, the chemical liquid does not circulate in the first circulating flow path C1, and the chemical liquid circulates in the second circulating flow path C2 (one cycle state).
圖12係用以說明基板處理裝置1之動作狀態自就緒狀態向空轉狀態之轉移之流程圖。FIG. 12 is a flowchart for explaining the transition of the operation state of the
於基板處理裝置1之就緒狀態下,藉由操作用於停機操作之按鈕(步驟S11),基板處理裝置1之動作狀態自就緒狀態朝空轉狀態轉移。具體而言,選擇循環停止空轉狀態及循環空轉狀態之任一者,並操作與所選擇之空轉狀態對應之按鈕(步驟S12)。若操作循環停止空轉按鈕95(參照圖8),則基板處理裝置1轉移至循環停止空轉狀態。若操作循環空轉按鈕96(參照圖8),則基板處理裝置1轉移至循環空轉狀態。In the ready state of the
若操作循環停止空轉按鈕95(步驟S12中YES),則控制裝置3停止泵37之驅動(步驟S13),且關閉第1循環閥40及第2循環閥70(步驟S14)。控制裝置3進而亦關閉其他閥。藉此,基板處理裝置1轉移至循環停止空轉狀態。If the cycle stop idling
另一方面,若操作循環空轉按鈕96(步驟S12中NO),則控制裝置3繼續泵37之驅動(步驟S16),且關閉第1循環閥40(圖12中標記為「外循環閥40」)(步驟S17)。而且,控制裝置3以如下方式控制調節器71,即,使於上游側部分33中流動之藥液之壓力,與就緒狀態下於上游側部分33中流動之藥液之壓力一致或接近(步驟S18)。藉由利用調節器71調整第2循環配管32之開度,而調整於上游側部分33中流動之藥液之壓力。On the other hand, if the circulation
具體而言,藉由壓力感測器72檢測上游側部分33在之檢測位置P11之藥液壓力。控制裝置3記憶就緒狀態下之在檢測位置P11之藥液壓力的值。而且,控制裝置3以使在檢測位置P11之藥液壓力與記憶之壓力的值一致或接近之方式控制調節器71。藉此,於上游側部分33中流動之藥液之壓力係維持在就緒狀態下於上游側部分33中流動之藥液之壓力的值或其附近。Specifically, the
藉此,基板處理裝置1轉移至循環空轉狀態。Thereby, the
圖13係用以說明循環停止空轉狀態下進行之處理之流程之圖。圖14係用以說明自循環停止空轉狀態朝就緒狀態轉移後不久之藥液之流動之圖。FIG. 13 is a diagram for explaining the flow of processing performed in the idling state of the cycle stop. Fig. 14 is a diagram for explaining the flow of the liquid medicine shortly after the circulation stops and the idling state transitions to the ready state.
於基板處理裝置1之循環停止空轉狀態下,維護負責人進行維護作業(圖13之步驟S21)。於循環停止空轉狀態下,停止泵37之驅動,使循環流路(第1循環流路C1及第2循環流路C2)中之藥液循環停止。因此,維護負責人可於循環停止空轉狀態下,對處理單元2、搬送機器人等進行維護作業。又,維護負責人可於循環停止空轉狀態下,進行與藥液供給裝置CS1相關之維護作業,即對流體盒4、藥液櫃5內部之機器、配管進行維護作業(機器及配管之改造、修理及更換、消耗品之更換。以下,有時將此簡稱為「機器等之改造等」)。然而,於循環停止空轉狀態下,較理想的是,對循環空轉狀態下無法維護之藥液櫃5內部之機器、配管進行維護作業。In the idling state of the cycle stop of the
若於基板處理裝置1之循環停止空轉狀態下,操作系統再開按鈕91(參照圖8)(就緒化,圖13之步驟S22中YES),基板處理裝置1之動作狀態朝就緒狀態轉移(圖13之步驟S23)。具體而言,控制裝置3如圖14所示,再次開始泵37之驅動,且打開第1循環閥40。又,控制裝置3於轉移為就緒狀態後不久,如圖14所示,於關閉返還閥89及除氣閥65之狀態下打開分支排液閥86及排液閥67。藉此,第1循環流路C1及第2循環流路C2中滯留之藥液不返回至藥液箱30,而是排出至排液箱80。根據泵37之供給能力、藥液黏性、配管直徑、配管長度來設定此時之排出期間,而可利用再次開始泵37之驅動後供給之新藥液來置換第1循環流路C1及第2循環流路C2內之所有滯留藥液。If the cycle of the
當自打開分支排液閥86後經過既定期間時,控制裝置3關閉分支排液閥86及排液閥67,且打開返還閥89。藉此,恢復至圖9所示之就緒狀態(圖13之步驟S24)。該就緒狀態下,於處理單元2中對基板W進行處理(批量生產處理)。When a predetermined period has elapsed since opening the
圖15係用以說明循環空轉狀態下進行之處理之流程之圖。圖16係用以說明自循環空轉狀態朝就緒狀態轉移後不久之藥液之流動之圖。Fig. 15 is a diagram for explaining the processing flow in the circulating idling state. FIG. 16 is a diagram for explaining the flow of the liquid medicine shortly after the transition from the circulating idle state to the ready state.
以往,作為基板處理裝置之空轉狀態,並未設置循環空轉狀態。因此,於基板處理裝置之空轉狀態下,停止泵之驅動,使循環流路中之藥液循環停止。於泵之驒動停止狀態下,施加至過濾器之藥液壓力成為零,因而微粒自過濾器流出。因此,於再次開始循環流路中之藥液的循環後,循環流路中存在大量微粒。因此,需要進行預備性地使藥液於循環流路中循環之預備循環、替換循環流路內之藥液之沖洗。然而,該等預備循環、沖洗需要大量時間。不僅如此,沖洗中還要消耗大量藥液。In the past, as the idling state of the substrate processing apparatus, the cyclic idling state was not provided. Therefore, in the idling state of the substrate processing apparatus, the driving of the pump is stopped to stop the circulation of the liquid medicine in the circulating flow path. When the pump is stopped, the pressure of the chemical liquid applied to the filter becomes zero, and the particles flow out from the filter. Therefore, after restarting the circulation of the liquid medicine in the circulating flow path, there are a large number of particles in the circulating flow path. Therefore, it is necessary to perform a preliminary cycle to preliminarily circulate the liquid medicine in the circulation flow path, and to replace the liquid medicine in the circulation flow path. However, these preliminary cycles and flushing require a lot of time. Not only that, but a large amount of liquid medicine is also consumed during washing.
基板處理裝置1之循環空轉狀態下,由於無泵37之驅動停止,因此自循環空轉狀態再次開始後,無需進行預備循環、沖洗。In the cycle idling state of the
基板處理裝置1之循環空轉狀態下,維護負責人進行維護作業(圖15之步驟S31)。循環空轉狀態下,驅動泵37,雖於第2循環流路C2中進行藥液之循環,但於第1循環流路C1中停止藥液之循環。因此,維護負責人可於循環空轉狀態下,對處理單元2、搬送機器人等進行維護作業。又,維護負責人可於循環空轉狀態下,進行與藥液供給裝置CS1相關之維護作業,即對流體盒4內部之機器、配管、消耗品等進行維護作業(機器等之改造等)。In the circulating idling state of the
然而,於循環空轉狀態下,當藥液於循環流路之一部分循環時,進行維護作業。於藥液供給裝置CS1產生既定狀態之情形時,根據該狀態類型,有時不宜繼續進行該維護作業。因此,於循環空轉狀態下,準備硬性連鎖。However, in the circulating idling state, when the liquid medicine circulates in a part of the circulating flow path, maintenance work is performed. When the chemical liquid supply device CS1 has a predetermined state, depending on the state type, it is sometimes not appropriate to continue the maintenance work. Therefore, in the cyclic idling state, prepare for a hard chain.
具體而言,於藥液櫃5設置有:偵測感測器(偵測單元)100(參照圖3),其用以偵測藥液櫃5之蓋(未圖示)打開;及偵測感測器(偵測單元)101(參照圖3),其用以偵測藥液櫃5內產生漏液。於循環空轉狀態下,藉由控制裝置3監視偵測感測器100、101有無偵測到該等情況。當藉由偵測感測器100、101偵測到藥液櫃5之蓋開放、藥液櫃5內產生漏液時,控制裝置3停止泵37之驅動,使偵測後之第2循環流路C2中之藥液循環停止。藉此,可預防產生不期望之事態。Specifically, the
當於循環空轉狀態下進行維護作業時,維護負責人操作緊急停止按鈕92(參照圖8)之情形時,控制裝置3亦停止泵37之驅動,使操作緊急停止按鈕92後之第2循環流路C2中之藥液循環停止。When the maintenance work is carried out in the circulating idling state, when the maintenance person in charge operates the emergency stop button 92 (refer to FIG. 8), the
若於基板處理裝置1之循環空轉狀態下,操作系統再開按鈕91(參照圖8)(就緒操作,圖15之步驟S32中YES),則基板處理裝置1之動作狀態朝就緒狀態轉移(圖15之步驟S33)。具體而言,控制裝置3如圖16所示,打開第1循環閥40。又,控制裝置3於剛轉移至就緒狀態後,便如圖16所示,於關閉返還閥89之狀態下打開分支排液閥86。藉此,上游側部分33及下游側部分34中滯留之藥液不返回至藥液箱30,而是排出至排液箱80中。藉由於繼續進行泵37之驅動之狀態下打開第1循環閥40,而再次開始於第1循環流路C1中之藥液的循環,因此可自藥液循環之再次開始起使賦予有循環壓力之藥液流入至下游側部分34。藉此,相較於自循環停止空轉狀態恢復之情形(圖14所示之狀態),可將自循環空轉狀態朝就緒狀態轉移時之排液所需之排液時間大幅地縮短(例如,約1/5〜約1/10)。If in the cycle idling state of the
當自打開分支排液閥86後經過既定期間時,控制裝置3關閉分支排液閥86及排液閥67,打開返還閥89。藉此,恢復至圖9所示之就緒狀態(圖15之步驟S34)。該就緒狀態下,於處理單元2中對基板W進行處理(批量生產處理)。When a predetermined period has elapsed since the opening of the
如上所述,根據第1實施形態,以如下方式控制調節器71,即,基板處理裝置1之循環空轉狀態下(藥液僅於第2循環流路C2中循環之一方循環狀態下)於上游側部分33中流動之藥液之壓力,與基板處理裝置1之就緒狀態下(藥液於第1循環流路C1及第2循環流路C2之兩者中循環之雙循環狀態下)於上游側部分33中流動之藥液之壓力一致或接近。由於基板處理裝置1之循環空轉狀態(一方循環狀態)下對過濾器39施加之壓力,與基板處理裝置1之就緒狀態(雙循環狀態)下對過濾器39施加之壓力一致或接近,因此不管基板處理裝置1之動作狀態為循環空轉狀態或就緒狀態,均可固定或相近地保持過濾器39之微粒捕捉能力。As described above, according to the first embodiment, the
藉此,可抑制或防止所捕捉之微粒隨著對過濾器39施加之壓力之變化而自過濾器39漏出。故而,可將微粒含量較少之潔淨之藥液(較佳為,不包含微粒之潔淨之藥液)供給至處理單元2。Thereby, it is possible to suppress or prevent the trapped particles from leaking from the
又,第1實施形態中,藉由利用調節器71對第2循環配管32之開度進行調整,而調整於上游側部分33中流動之藥液之壓力。藉此,可利用簡單構成來調整於上游側部分33中流動之藥液之壓力。Furthermore, in the first embodiment, by adjusting the opening degree of the
又,於循環空轉狀態中,藥液不於第1循環流路C1中循環,而是藥液於第2循環流路C2中循環。因此,於維護作業之對象部位為不影響第2循環流路C2中之藥液循環之部位之情形時(例如,對處理單元2、搬送機器人等進行維護作業之情形時),可一面將基板處理裝置1設定於循環空轉狀態,一面對藥液供給裝置CS1、處理單元2進行維護作業。Moreover, in the circulating idling state, the chemical liquid does not circulate in the first circulating flow path C1, but the chemical liquid circulates in the second circulating flow path C2. Therefore, when the target part of the maintenance work is a part that does not affect the circulation of the chemical liquid in the second circulation flow path C2 (for example, when the maintenance work is performed on the
另一方面,於維護對象為影響到第2循環流路C2中之藥液循環之部位之情形時,無法一面使藥液於第2循環流路C2中循環,一面進行維護作業。因此,該情形時,可將基板處理裝置1之動作狀態設定為循環停止空轉狀態。On the other hand, when the maintenance object is a part that affects the circulation of the liquid medicine in the second circulation flow path C2, it is impossible to perform maintenance work while circulating the liquid medicine in the second circulation flow path C2. Therefore, in this case, the operating state of the
如此,藉由根據維護部位而分開使用複數個空轉狀態,能夠縮短泵37停止之期間。當前,對基板處理裝置1進行之大部分維護係將其對象設為不影響第2循環流路C2中之藥液循環之部位。因此,藉由採用循環停止空轉狀態作為基板處理裝置1之空轉狀態,可飛躍性地提高基板處理裝置1之運轉率。In this way, by separately using a plurality of idling states according to the maintenance location, the period during which the
此外,第1實施形態中,於自空轉狀態(循環停止空轉狀態及/或循環空轉狀態)恢復至就緒狀態後之排液時,亦可使泵37之移動構件46之行程時間(移動構件46(參照圖6)往返動作1次所需之時間)長於空轉狀態、就緒狀態。換言之,亦可使自空轉狀態恢復至就緒狀態後之排液時之移動構件46之行程時間,長於除此以外之狀態、即空轉狀態、就緒狀態等穩定狀態之行程時間。In addition, in the first embodiment, when the liquid is discharged after returning to the ready state from the idling state (circulation stop idling state and/or circulation idling state), the stroke time of the moving
泵37(伸縮泵)之伸縮管47除其表面積(即,與藥液之接液面積)較大以外,還為樹脂製,因此易於產生微粒。另一方面,泵37(伸縮泵)因其構造上之特性,而有捕捉所產生之微粒並將之積存於伸縮管47內之性質。而且,因於就緒狀態下驅動泵37而一點點地自伸縮管47內排出微粒,故而有於循環流路(第1循環流路C1及/或第2循環流路C2)中循環之藥液長期持續受到污染之虞。The
圖17係用以說明泵37之行程時間與附著之微粒數之關係之圖。圖17中,泵37之循環壓力及循環流量係分別固定。FIG. 17 is a diagram for explaining the relationship between the stroke time of the
藉由使泵37之移動構件46之行程時間較平常時之行程時間(1.5秒)更長(2.0秒),而能夠將此前積存於泵37之伸縮管47內之微粒有效地排出至泵37外。By making the stroke time of the moving
於在恢復至就緒狀態後,將第1循環流路C1及/或第2循環流路C2內之藥液排出至藥液供給裝置CS1外之情形時,控制裝置3以使泵37之移動構件46之行程時間長於空轉狀態、就緒狀態之方式控制泵37。藉此,可減少泵37內積存之微粒量,故而,可減少供給至基板W之藥液中所含之微粒。When the liquid medicine in the first circulation channel C1 and/or the second circulation channel C2 is discharged to the outside of the liquid medicine supply device CS1 after returning to the ready state, the
圖18係表示本發明之第2實施形態之基板處理裝置201之藥液供給裝置CS2之示意圖。FIG. 18 is a schematic diagram showing the chemical solution supply device CS2 of the
第2實施形態中,對與上述第1實施形態共通之部分標註與圖1〜圖17之情形相同之參照符號,並省略說明。In the second embodiment, the same reference numerals as in the case of FIGS. 1 to 17 are assigned to the parts common to the above-mentioned first embodiment, and the description is omitted.
第2實施形態之藥液供給裝置CS2與第1實施形態之藥液供給裝置CS1之主要不同點在於,於上游側部分33之中途部設置第1並聯配管211A及第2並聯配管211B,且於第1並聯配管211A及第2並聯配管211B中分別介裝有第1過濾器239A及第2過濾器239B。第2過濾器239B係轉移至就緒狀態時之專用過濾器。以下,具體地進行說明。The main difference between the chemical solution supply device CS2 of the second embodiment and the chemical solution supply device CS1 of the first embodiment is that the first
如上所述,第1循環配管31包含較連接位置P2更靠上游側之上游側部分33、及較連接位置P2更靠下游側之下游側部分34。第2循環配管32於連接位置P2自第1循環配管31分支。第2實施形態中,第1循環配管31於藥液箱30與連接位置P2之間之連接位置P4處分支為2個部分,其後,於連接位置P4與連接位置P2之間之位置匯合。上游側部分33包含並聯連接之第1並聯配管211A及第2並聯配管211B。第1並聯配管211A及第2並聯配管211B之上游端於連接位置P4相互連接。第1並聯配管211A及第2並聯配管211B之下游端於連接位置P4與連接位置P2之間之位置相互連接。As described above, the
於第1並聯配管211A中介裝有第1過濾器239A、與用以將第1並聯配管211A加以開閉之第1並聯閥212A。於第2並聯配管211B中介裝有第2過濾器239B、與用以將第2並聯配管211B加以開閉之第2並聯閥212B。第1過濾器239A及第2過濾器239B係與過濾器39(參照圖7)相同之過濾器。A
第1並聯閥212A與第2並聯閥212B構成第2切換單元。第2切換單元將上游側部分33中較連接位置P4更靠上游側之藥液之目的地於第1並聯配管211A、與第2並聯配管211B之間切換。第2切換單元亦可具備三向閥而代替第1並聯閥212A及第2並聯閥212B,或除第1並聯閥212A及第2並聯閥21B外再具備三向閥。The first
於關閉第2並聯閥212B之狀態下,打開第1並聯閥212A。藉此,於上游側部分33中在較第1並聯配管211A與第2並聯配管211B之連接位置P4更靠上游側流動之藥液,被導引至第1並聯配管211A並通過第1過濾器239A。With the second
另一方面,於關閉第1並聯閥212A之狀態下打開第2並聯閥212B。藉此,於上游側部分33中在較第1並聯配管211A及第2並聯配管211B之連接位置P4更靠上游側流動之藥液,被導引至第2並聯配管211B並通過第2過濾器239B。On the other hand, the second
第1過濾器239A係於過濾性能上不同於第2過濾器239B。第2過濾器239B之孔63(參照圖7)之直徑係大於第1過濾器239A之孔63(參照圖7)之直徑。即,若第1過濾器239A之孔徑較小,則被捕捉於第1過濾器239A之孔63內之微粒於孔63中所占之比例變大,因此容易引起第1過濾器239A之堵塞。The
圖18之例中,省略除氣配管,但亦可於各過濾器239A、239B設置與除氣配管64(參照圖5)相同之除氣配管。又,亦可於各過濾器239A、239B設置與排液配管66(參照圖5)相同之排液配管。In the example of FIG. 18, the degassing piping is omitted, but the same degassing piping as the degassing piping 64 (refer to FIG. 5) may be provided in each
圖19係用以說明就緒狀態之基板處理裝置201中之藥液之流動之圖。圖20係用以說明自循環停止空轉狀態朝就緒狀態轉移後不久之藥液之流動之圖。FIG. 19 is a diagram for explaining the flow of the chemical liquid in the
基板處理裝置201之就緒狀態下之藥液流動如圖19所示,與第1實施形態之基板處理裝置1之就緒狀態(參照圖9)下之藥液流動相同。除此此外,基板處理裝置201之就緒狀態下,如圖19所示,控制裝置3關閉第2並聯閥212B且打開第1並聯閥212A。藉此,就緒狀態下,於上游側部分33中在較第1並聯配管211A及第2並聯配管211B之連接位置P4(第4連接位置)更靠上游側流動之藥液,被導引至第1並聯配管211A並通過第1過濾器239A。The flow of the chemical liquid in the ready state of the
另一方面,基板處理裝置201之循環停止空轉狀態下之藥液流動,亦與第1實施形態之基板處理裝置1之循環停止空轉狀態(參照圖10)下之藥液流動相同。於循環停止空轉狀態下,停止泵37之驅動,因此於第1循環流路C1及第2循環流路C2之兩者中藥液之循環停止。On the other hand, the flow of the chemical solution in the cycle stop idling state of the
在循環停止空轉狀態下,於第1循環流路C1及第2循環流路C2之兩者中藥液之循環停止,因此對藥液櫃5內部之機器等(機器、配管、消耗品等)進行維護作業。該維護作業包含對上游側部分33中配置於過濾器239A、239B之上游之機器進行改造等(改造、修理及更換)。有時於經進行改造等之機器等上附著有微粒。若於該狀態下藉由泵37之驅動開始而使藥液之循環開始,則機器等上附著之大量微粒被供給至過濾器239A、239B,其結果,過濾器239A、239B發生堵塞,該過濾器239A、239B之微粒捕捉能力降低。其結果,有微粒自過濾器239A、239B漏出之虞。In the idling state of the circulation stop, the circulation of the liquid medicine in both the first circulation flow path C1 and the second circulation flow path C2 is stopped, so the equipment inside the medicine tank 5 (machines, piping, consumables, etc.) Carry out maintenance work. This maintenance work includes modification (modification, repair, and replacement) of the equipment arranged upstream of the
自循環停止空轉狀態向就緒狀態轉移時,如圖20所示,控制裝置3關閉第1並聯閥212A且打開第2並聯閥212B。藉此,於上游側部分33中在較第1並聯配管211A及第2並聯配管211B之連接位置P4更靠上游側流動之藥液,被導引至第2並聯配管211B並通過第2過濾器239B。When transitioning from the cycle-stop idling state to the ready state, as shown in FIG. 20, the
當自朝就緒狀態之轉移經過既定時間時,控制裝置3關閉第2並聯閥212B且打開第1並聯閥212A。藉此,於上游側部分33中在較第1並聯配管211A及第2並聯配管211B之連接位置P4更靠上游側流動之藥液,被導引至第1並聯配管211A並通過第1過濾器239A。When a predetermined time has passed since the transition to the ready state, the
如上所述,根據第2實施形態,當基板處理裝置201轉移為就緒狀態時,利用與就緒狀態下使用之第1過濾器239A不同之第2過濾器239B來過濾藥液,其後,利用第1過濾器239A來過濾藥液。藉此,可抑制第1過濾器239A發生堵塞。藉此,可抑制或防止微粒自第1過濾器239A漏出。故而,可將微粒含量較少之潔淨之藥液(較佳為,不包含微粒之潔淨之藥液)供給至處理單元2。As described above, according to the second embodiment, when the
又,第2過濾器239B之網孔係較第1過濾器239A之網孔更粗,因此於朝就緒狀態之轉移時,可藉由第2過濾器239B捕獲相對較大之微粒,此外,可藉由第1過濾器239A捕獲相對較小之微粒。因此,於朝就緒狀態之轉移時,可抑制藉由第2過濾器239B捕捉之微粒量,因此可抑制第2過濾器239B堵塞、及微粒自第2過濾器239B漏出。In addition, the mesh of the
圖21A係表示本發明之第3實施形態之基板處理裝置301之藥液供給裝置CS3之示意圖。21A is a schematic diagram showing the chemical liquid supply device CS3 of the
第3實施形態中,對與上述第1實施形態共通之部分,標註與圖1〜圖17之情形相同之參照符號,並省略說明。In the third embodiment, the parts common to the above-mentioned first embodiment are denoted by the same reference numerals as in the case of FIGS. 1 to 17, and the description is omitted.
第3實施形態之藥液供給裝置CS3與第1實施形態之藥液供給裝置CS1之主要不同點在於,使返還配管(外循環配管)302分支連接於各供給配管22之中途部。第3實施形態之外循環配管係由第1循環配管31中較連接位置P1更靠上游側之部分、供給配管22中較連接位置P9更靠上游側之部分、及返還配管302所構成。第3實施形態之內循環配管係由第1循環配管31中較連接位置P1更靠下游側之部分所構成。第3實施形態之吐出口連通配管係由自連接位置P9至吐出口21a之流路所構成。The main difference between the chemical solution supply device CS3 of the third embodiment and the chemical solution supply device CS1 of the first embodiment is that the return pipe (outer circulation pipe) 302 is branched and connected to the middle of each
圖21A之例中,於各供給配管22中不僅介裝有吐出閥23,而且亦介裝有加熱器303、流量計304、流量調整閥305等。返還配管302係於供給配管22中分支連接於被設定在較流量計304、流量調整閥305、加熱器303各者之介裝位置更靠下游側之連接位置P9。返還配管302之另一端係連接於藥液箱30。使藥液箱30內之藥液循環之第3循環流路C3係由藥液箱30、第1循環配管31中較連接位置P1更靠上游側之部分、供給配管22中較連接位置P9更靠上游側之部分、及返還配管302所形成。於返還配管302之中途部介裝有用以將返還配管302加以開閉之返還閥306。In the example of FIG. 21A, not only the
於第3實施形態中,第3循環流路C3構成外循環流路,第1循環流路C1中較連接位置P1更靠下游側之部分構成內循環流路。In the third embodiment, the third circulation channel C3 constitutes an outer circulation channel, and the portion of the first circulation channel C1 on the downstream side of the connection position P1 constitutes an inner circulation channel.
於各供給配管22中較連接位置P9更靠下游側之部分,介裝有用以將該下游側部分加以開閉之第2吐出閥307。藉由於關閉第2吐出閥307之狀態下打開返還閥306,於供給配管22中在較連接位置P9更靠上游側流動之藥液係經由返還配管302而被導引至藥液箱30中。另一方面,藉由於關閉返還閥306之狀態下打開第2吐出閥307,於供給配管22中在較連接位置P9更靠上游側流動之藥液係被導引至吐出噴嘴21之吐出口21a。A
於第3實施形態中,如圖21A所示,藥液供給裝置CS3包含壓力調整單元,該壓力調整單元係對於第3實施形態之上游側部分33,即於第1循環配管31中較連接位置P1更靠上游側之部分流動之藥液之壓力進行調整。壓力調整單元係係對較連接位置P1更靠下游側之下游側部分34之開度進行調整之開度調整單元。開度調整單元介裝於下游側部分34。圖21A之例中,開度調整單元為調節器308。調節器308例如為電動氣動調節器。開度調整單元並不限定於調節器308,亦可為洩放閥、電動針閥等電動閥。壓力調整單元進而具備檢測上游側部分33內之藥液壓力之壓力感測器72。In the third embodiment, as shown in FIG. 21A, the medical solution supply device CS3 includes a pressure adjustment unit that is relatively connected to the
與基板處理裝置1相同,作為基板處理裝置301之動作狀態,準備有就緒狀態、循環停止空轉狀態及循環空轉狀態。基板處理裝置301之就緒狀態下,藥液於構成外循環流路之第3循環流路C3與構成內循環流路之第1循環流路C1之兩者中循環(雙循環狀態)。在基板處理裝置301之循環停止空轉狀態下,於第3循環流路C3及第1循環流路C1之兩者中藥液之循環停止。於基板處理裝置301之循環空轉狀態下,第3循環流路C3中藥液之循環停止,第1循環流路C1中藥液之循環繼續。不管基板處理裝置301為就緒狀態及循環空轉狀態之何者,藥液均於第2循環流路C2中循環。當基板處理裝置301為循環停止空轉狀態時,藥液不於第2循環流路C2中循環。As with the
於基板處理裝置301之循環空轉狀態下,維護負責人可對處理單元2、搬送機器人進行維護作業。又,維護負責人可於循環空轉狀態下,對與藥液供給裝置CS3相關之機器,即對供給配管22及返還配管302、以及介裝於供給配管22及返還配管302中之機器(例如,吐出閥23、加熱器303、流量計304、流量調整閥305、返還閥306、第2吐出閥307)等進行維護作業(改造等)。In the circulating idling state of the
以如下方式控制調節器308,即,使基板處理裝置301之循環空轉狀態下(藥液於第1循環流路C1中循環之一方循環狀態下)於上游側部分33中流動之藥液之壓力,與基板處理裝置301之就緒狀態下(藥液於第1循環流路C1及第3循環流路C3之兩者中循環之雙循環狀態下)於上游側部分33中流動之藥液之壓力一致或接近。由於基板處理裝置301之循環空轉狀態(一方循環狀態)下對過濾器39施加之壓力係與基板處理裝置301之就緒狀態(雙循環狀態)下對過濾器39施加之壓力一致或接近,因此不管基板處理裝置301之動作狀態為循環空轉狀態或就緒狀態,均可固定或大致固定地保持過濾器39之微粒捕捉能力。The
藉此,可抑制或防止捕捉之微粒隨著對過濾器39施加之壓力之變化而自過濾器39漏出。故而,可將微粒含量較少之潔淨之藥液(較佳為,不包含微粒之潔淨之藥液)供給至處理單元2。Thereby, it is possible to suppress or prevent the trapped particles from leaking from the
圖21B係表示本發明之第3實施形態之變形例之示意圖。Fig. 21B is a schematic diagram showing a modification of the third embodiment of the present invention.
圖21B所示之變形例與圖21A所示之第3實施形態之不同點在於,將連接位置P9配置於各吐出噴嘴21之中途部,即配置於處理單元2之內部。於圖21B所示之變形例中,供給配管22中較連接位置P9更靠下游側之部分係構成連通於吐出口21a之吐出口連通配管。圖21B所示之變形例中,第3循環流路C3延伸至吐出噴嘴21之中途部,即延伸至處理單元2之內部。藉由使經加熱器加熱之藥液於第3循環流路C3中循環,可將溫度被高精度地控制於所需高溫之藥液自吐出噴嘴21之吐出口吐出。The modification shown in FIG. 21B is different from the third embodiment shown in FIG. 21A in that the connection position P9 is arranged in the middle of each
圖21C係表示本發明之第4實施形態之基板處理裝置401之藥液供給裝置CS4之示意圖。FIG. 21C is a schematic diagram showing the chemical solution supply device CS4 of the
於第4實施形態中,對與上述第1實施形態共通之部分,標註與圖1〜圖17之情形相同之參照符號,並省略說明。In the fourth embodiment, the parts common to the first embodiment described above are denoted by the same reference numerals as in the case of FIGS. 1 to 17, and the description is omitted.
第4實施形態之藥液供給裝置CS4與第1實施形態之藥液供給裝置CS1之主要不同點在於,於上游側部分33中被設定於介裝在上游側部分33之機器(例如,泵37、加熱器38、過濾器39)之下游側的機器下游區域402,介裝有計測該機器下游區域402之污染狀態之污染狀態計測裝置403。The main difference between the chemical solution supply device CS4 of the fourth embodiment and the chemical solution supply device CS1 of the first embodiment is that the
機器下游區域402係上游側部分33之一部分,其包含介裝於上游側部分33中之機器之介裝位置與該介裝位置之下游。於複數個機器介裝於上游側部分33之情形時,若將於藥液流動之方向上鄰接之2個機器定義為上游機器及下游機器,則自上游機器之介裝位置至下游機器之介裝位置之區域為與上游機器對應之機器下游區域402。如圖21C所示,針對每一機器(泵37、加熱器38、過濾器39)而設置有機器下游區域402。The machine
圖21C之例中,3個機器下游區域402設置於上游側部分33,3個污染狀態計測裝置403介裝於相當於第2上游側部分之上游側部分33。因此,與各機器下游區域402對應而設置有一個污染狀態計測裝置403。In the example of FIG. 21C, three equipment
污染狀態計測裝置403係對於各機器下游區域402中流動之藥液中所含之微粒量進行計測。具體而言,污染狀態計測裝置403係對固定時間內通過機器下游區域402之藥液中所含之微粒數進行計測。污染狀態計測裝置403之計測結果係被輸入至控制裝置3。污染狀態計測裝置403包含例如微粒計數器、全反射螢光X射線分析裝置(TRXRF)、能量分散型X射線分析裝置(EDX: Energy Dispersive X-ray spectrometer)、掃描型電子顯微鏡(SEM:Scanning Electron Microscope)、及圖像識別異物檢查裝置之至少一者。The contamination
個別排液配管(排液配管)404分支連接於各機器下游區域402中。各個別排液配管404之下游端係連接於排液箱80。於個別排液配管404中介裝有用以將個別排液配管404加以開閉之個別排液閥405。The individual drain piping (drain piping) 404 is branched and connected to the
個別排液配管404係於連接位置(第5連接位置)P5連接於上游側部分33。污染狀態計測裝置403係於上游側部分33之計測位置P12對污染狀態進行計測。連接位置P5配置於自對應之各機器(泵37、加熱器38、過濾器39)向下游側隔開既定間隔(例如15厘米)之位置。計測位置P12配置於自對應之各機器(泵37、加熱器38、過濾器39)向下游側隔開較小間隔(例如10厘米)之位置。圖21C之例中,連接位置P5配置於較計測位置P12更靠下游側。連接位置P5亦可配置於較計測位置P12更靠上游側。計測位置P12及連接位置P5亦可為自對應之各機器(泵37、加熱器38、過濾器39)隔開相同程度之間隔而配置。The
於各機器下游區域402中介裝有用以將機器下游區域402加以開閉之機器下游閥406。A machine
於第4實施形態中,個別排液閥405與機器下游閥406構成第3切換單元。第3切換單元將各機器下游區域402中之較連接位置P5更靠上游側之藥液之目的地於該各機器下游區域402中之較連接位置P5更靠下游側、與個別排液配管404之間切換。第3切換單元亦可具備三向閥來代替個別排液閥405及機器下游閥406,或除個別排液閥405及機器下游閥406外再具備三向閥。In the fourth embodiment, the
於各機器下游區域402中,藉由於關閉該機器下游區域402中介裝之機器下游閥406之狀態下,打開與該機器下游區域402對應之個別排液閥405,而將於機器下游區域402中流動之藥液經由與該機器下游區域402對應之個別排液配管404而導引至排液箱80。In each machine
另一方面,於各機器下游區域402中,藉由於關閉與該機器下游區域402對應之個別排液閥405之狀態下,打開該機器下游區域402中介裝之機器下游閥406,而機器下游區域402內之藥液通過機器下游閥406,並自該機器下游區域402向下游排出。若機器下游區域402不為最下游之機器下游區域402,則通過機器下游區域402之藥液被導引至接下來之機器中(圖21C之例中,加熱器38或過濾器39)。On the other hand, in each machine
圖22係用以說明就緒狀態之藥液供給裝置CS4中執行之處理之內容之流程圖。FIG. 22 is a flowchart for explaining the content of the processing executed in the liquid medicine supply device CS4 in the ready state.
於藥液供給裝置CS4之就緒狀態下,控制裝置3時常監視於各機器下游區域402流動之藥液中所含之微粒量(步驟S41)。而且,控制裝置3根據污染狀態計測裝置403之計測結果,特定出微粒產生源(成為微粒產生源之機器)。In the ready state of the liquid medicine supply device CS4, the
然後,控制裝置3特定出與所特定之微粒產生源(成為微粒產生源之機器)對應之機器下游區域402(步驟S42),並打開與該機器下游區域402對應之個別排液閥405(步驟S43)。此時,除此以外之個別排液閥405處於維持關閉狀態(步驟S43)。Then, the
圖23係用以說明用於特定出微粒產生源之第1方法之流程圖。FIG. 23 is a flowchart for explaining the first method for identifying the source of particle generation.
控制裝置3根據污染狀態計測裝置403之計測結果,調查污染狀態計測裝置403之計測值是否超過預先規定之第1臨限值(步驟S51)。而且,於污染狀態計測裝置403之計測值超過第1臨限值之情形時(步驟S51中YES),控制裝置3將與該污染狀態計測裝置403對應之機器下游區域402特定為微粒產生源(步驟S52)。The
圖24係用以說明用於特定微粒產生源之第2方法之流程圖。Fig. 24 is a flow chart for explaining the second method for the specific particle generation source.
控制裝置3根據污染狀態計測裝置403之計測結果,調查相互鄰接之污染狀態計測裝置403之計測值的差是否超過第2臨限值(步驟S61)。而且,於相互鄰接之污染狀態計測裝置403之計測值的差超過第2臨限值之情形時(步驟S61中YES),控制裝置3將與計測值較高之污染狀態計測裝置403對應之機器下游區域402特定為微粒產生源(步驟S62)。Based on the measurement result of the pollution
圖23所示之第1方法及圖24所示之第2方法中,亦可不根據計測值與臨限值之大小關係,而是根據基於計測值來運算出之運算值與臨限值之大小關係來進行微粒產生源之特定。In the first method shown in FIG. 23 and the second method shown in FIG. 24, it is also possible not to base on the magnitude relationship between the measured value and the threshold value, but the magnitude of the calculated value and threshold value calculated based on the measured value Relations to specify the source of particle generation.
根據該第4實施形態,藉由介裝於上游側部分33之機器下游區域402中之污染狀態計測裝置403,而計測因機器產生之微粒。藉由污染狀態計測裝置403,不僅能夠計測有無因機器產生之微粒,而且亦能夠計測因機器產生之微粒量。又,污染狀態計測裝置403介裝於自機器產生之微粒通過之機器下游區域402中,因此可準確計測自機器產生之微粒量。According to the fourth embodiment, the pollution
故而,可將微粒含量較少之潔淨之藥液(較佳為,不包含微粒之潔淨之藥液)供給至處理單元2。Therefore, it is possible to supply a clean chemical solution with a small content of particles (preferably, a clean chemical solution that does not contain particles) to the
又,污染狀態計測裝置403係對應於各機器下游區域402而設置。能夠根據複數個污染狀態計測裝置403之計測值,而特定出成為微粒產生源之機器。In addition, the pollution
又,個別排液配管404分支連接於各機器下游區域402。於特定出成為微粒產生源之機器之情形時,藉由將藥液經由個別排液配管404排出至與該機器對應之機器下游區域402,能夠將包含微粒之藥液經由與成為微粒產生源之機器對應之機器下游區域402而直接排出。In addition, the individual drain piping 404 is branched and connected to the
於該第4實施形態中,當基板處理裝置401為就緒狀態,且處理單元2執行基板W之處理時,於在機器下游區域402流動之藥液中所含之微粒數(污染狀態計測裝置403之計測值、或基於其之計算值)超過高於第1臨限值之第3臨限值之情形時,顯示輸入裝置3h(參照圖3)及警報裝置(未圖示)之至少一者亦可發出藥液污染(異常狀態)之警告而使基板處理中止。亦可為,亦於在複數個機器下游區域402中微粒數超過第1臨限值之情形時,發出異常狀態之警告而使基板處理中止。該情形時,於有執行中之基板處理之情形時,並不立即中止,而是於該處理後中止。In the fourth embodiment, when the
如此之處理並非僅於第4實施形態之基板處理中執行,亦可於接下來所述之第5實施形態之基板處理中執行。Such processing is not only performed in the substrate processing of the fourth embodiment, but may also be performed in the substrate processing of the fifth embodiment described below.
圖25係表示本發明之第5實施形態之基板處理裝置501之藥液供給裝置CS5之示意圖。FIG. 25 is a schematic diagram showing the chemical solution supply device CS5 of the
於第5實施形態中,對與上述第4實施形態共通之部分標註與圖21C〜圖24之情形相同之參照符號,並省略說明。In the fifth embodiment, the same reference numerals as in the case of FIGS. 21C to 24 are assigned to the parts common to the above-mentioned fourth embodiment, and the description is omitted.
第5實施形態之藥液供給裝置CS5與第4實施形態之藥液供給裝置CS4之主要不同點在於,於各機器下游區域402設置有連接機器下游區域402與第2循環配管32之旁路配管502來代替個別排液配管404。再者,未設置與最下游側之機器下游區域402對應之旁路配管502。The main difference between the chemical solution supply device CS5 of the fifth embodiment and the chemical solution supply device CS4 of the fourth embodiment is that a bypass pipe connecting the device
各旁路配管502之上游端係在連接位置(第6連接位置)P61連接於上游側部分33。各旁路配管502之下游端係在連接位置P62連接於第2循環配管32。使藥液箱30內之藥液循環之旁路循環流路CB1、CB2(參照圖27〜圖28)係由旁路配管502、上游側部分33中之連接位置P61的上游側之部分、及第2循環配管32中之連接位置P62的下游側之部分所形成。The upstream end of each
圖25中之上側之旁路配管502(以下,亦稱為「上側之旁路配管502」)之上游端係配置於較圖25中之下側之旁路配管502(以下,亦稱為「下側之旁路配管502」)之上游端更靠上游。另一方面,上側之旁路配管502之下游端係配置於較下側之旁路配管502之下游端更靠下游。因此,藥液流動之方向上之複數個旁路配管502之上游端彼此之位置關係,與藥液流動之方向上之複數個旁路配管502之下游端彼此之位置關係不同。The upstream end of the bypass piping 502 on the upper side in FIG. 25 (hereinafter, also referred to as "the bypass piping 502 on the upper side") is arranged in comparison with the bypass piping 502 on the lower side in FIG. 25 (hereinafter, also referred to as " The upstream end of the
於各旁路配管502中介裝有:旁路閥503,其用以將該旁路配管502加以開閉;及旁路過濾器504,其自於該旁路配管502中流動之藥液除去異物。旁路過濾器504係與過濾器39(參照圖7)相同之過濾器。Each
圖25之例中,於各機器下游區域402中,與該機器下游區域402對應之旁路配管502之連接位置P61係配置於較利用污染狀態計測裝置403進行計測之計測位置P12更靠下游側。更具體而言,旁路配管502之連接位置P61係配置於自對應之各機器(泵37、加熱器38、過濾器39)向下游側隔開既定間隔(例如15厘米)之位置。計測位置P12及連接位置P61亦可自對應之各機器(泵37、加熱器38、過濾器39)隔開相同程度之間隔而配置。連接位置P61亦可配置於較計測位置P12更靠上游側。In the example of FIG. 25, in each equipment
第5實施形態中,旁路閥503與機器下游閥406構成第4切換單元。第4切換單元係將各機器下游區域402中之較連接位置P61更靠上游側之藥液之目的地於各機器下游區域402中之較連接位置P61更靠下游側、與旁路配管502之間切換。第4切換單元亦可具備三向閥來代替旁路閥503及機器下游閥406,或除旁路閥503及機器下游閥406外再具備三向閥。In the fifth embodiment, the
於各機器下游區域402中,藉由於關閉與該機器下游區域402對應之機器下游閥406之狀態下,打開與該機器下游區域402對應之旁路閥503,而將於機器下游區域402中流動之藥液經由與該機器下游區域402對應之旁路配管502而導引至第2循環配管32中。In each machine
另一方面,於各機器下游區域402中,藉由於關閉與該機器下游區域402對應之旁路閥503之狀態下,打開與該機器下游區域402對應之機器下游閥406,而機器下游區域402內之藥液通過機器下游閥406,並自該機器下游區域402向下游排出。若機器下游區域402不為最下游之機器下游區域402,則通過機器下游區域402之藥液被導引至接下來之機器(圖25之例中,加熱器38或過濾器39)。On the other hand, in each machine
圖26係用以說明就緒狀態之藥液供給裝置CS5中執行之處理之內容之流程圖。FIG. 26 is a flowchart for explaining the content of the processing executed in the liquid medicine supply device CS5 in the ready state.
於藥液供給裝置CS5之就緒狀態下,控制裝置3時常監視於各機器下游區域402流動之藥液中所含之微粒量(步驟S71)。而且,控制裝置3根據污染狀態計測裝置403之計測結果,特定出微粒產生源(成為微粒產生源之機器)(步驟S72)。作為用於特定出該微粒產生源之方法,可採用圖23所示之第1方法及圖24所示之第2方法。In the ready state of the liquid medicine supply device CS5, the
然後,控制裝置3特定出與所特定之微粒產生源(成為微粒產生源之機器)對應之機器下游區域402,打開與該機器下游區域402對應之旁路閥503(步驟S73)。此時,除此以外之旁路閥503、第2循環閥70(圖23中標記為「內循環閥70」)係處於維持關閉狀態(步驟S73)。Then, the
根據該第5實施形態,除關聯於第4實施形態而說明之作用效果以外,還發揮以下作用效果。According to the fifth embodiment, in addition to the functions and effects explained in connection with the fourth embodiment, the following functions and effects are also exhibited.
即,連接該機器下游區域402與第2循環配管32之旁路配管502係分支連接於各機器下游區域402。於特定出成為微粒產生源之機器之情形時,能夠將與該機器對應之機器下游區域402內之藥液經由旁路配管502而直接導引至第2循環配管32中。該情形時,能夠將包含微粒之藥液自與成為微粒產生源之機器對應之機器下游區域402直接導引至第2循環配管32。包含微粒之藥液係藉由通過介裝於旁路配管502中之旁路過濾器504而潔淨化。藉此,可抑制或防止微粒擴散於上游側部分33之其他部分、第2循環配管32。That is, the
圖27〜圖29係用以說明第5實施形態中剛自循環停止空轉狀態朝就緒狀態轉移後之藥液之流動之圖。Figures 27 to 29 are diagrams for explaining the flow of the liquid medicine just after the transition from the circulating stop idling state to the ready state in the fifth embodiment.
若於循環停止空轉狀態下進行機器更換或配管改造等,則有時會於經更換之機器或經改造之配管上附著微粒。當於該狀態下轉移為就緒狀態,在循環流路中藥液之循環開始時,有經更換之機器或經改造之配管上所附著之大量微粒擴散於第1循環流路C1及/或第2循環流路C2之全體區域之虞。If equipment replacement or piping modification is performed while the cycle is stopped and idling, particles may adhere to the replaced equipment or modified piping. When the state transitions to the ready state, when the circulation of the liquid medicine in the circulating flow path starts, a large number of particles attached to the replaced equipment or the remodeled piping diffuse in the first circulating flow path C1 and/or the second 2 The whole area of the circulating flow path C2 is concerned.
自循環停止空轉狀態朝就緒狀態轉移時,如圖27〜圖29所示,自連接位置P61位於更靠上游側之旁路配管502起依序打開旁路配管502。首先,如圖27所示,於上游側之旁路配管502(與泵37對應之旁路配管502)中流動藥液。藉此,藥液於旁路循環流路CB1(參照圖27)中循環。When the circulation stops and the idling state transitions to the ready state, as shown in FIGS. 27 to 29, the
於旁路循環流路CB1中流動之藥液變得潔淨後,如圖28所示,於下游側之旁路配管502(與加熱器38對應之旁路配管502)中流動藥液。藉此,藥液於旁路循環流路CB2(參照圖28)中循環。After the chemical liquid flowing in the bypass circulation channel CB1 becomes clean, as shown in FIG. 28, the chemical liquid flows through the bypass pipe 502 (
於旁路循環流路CB2中流動之藥液變得潔淨後,如圖29所示,容許藥液流入第2循環流路C2。藉此,藥液於第2循環流路C2中循環。After the liquid medicine flowing in the bypass circulation flow path CB2 becomes clean, as shown in FIG. 29, the liquid medicine is allowed to flow into the second circulation flow path C2. Thereby, the chemical liquid circulates in the second circulation flow path C2.
自循環停止空轉狀態轉移為就緒狀態時,藉由自連接位置P61位於更靠上游側之旁路配管502起依序打開,可將藥液循環之循環流路按旁路循環流路CB1→旁路循環流路CB2→第2循環流路C2之順序階段地擴大。藉此,可抑制或防止微粒向上游側部分33之其他部分或第2循環配管32擴散,並且可使藥液於第2循環流路C2中循環。When the circulation stop and the idling state transition to the ready state, by opening the
以上,對本發明之5個實施形態進行了說明,但本發明亦可進而以其他形態實施。Above, the five embodiments of the present invention have been described, but the present invention can also be implemented in other embodiments.
例如,第1實施形態中,亦可為,調節器71調整上游側部分33之開度,而非第2循環配管32之開度。For example, in the first embodiment, the
上述第1及第3實施形態中,壓力感測器72亦可配置於過濾器39之下游側。又,於即便不檢測上游側部分33之壓力,亦可良好地利用調節器71進行上游側部分33之壓力調整之情形時,亦可省略壓力感測器72。In the first and third embodiments described above, the
第1及第3實施形態中,調節器71、308亦可於就緒狀態及循環停止空轉狀態之兩者下調整流量。In the first and third embodiments, the
第2、第4及第5實施形態中,作為基板處理裝置之動作狀態,亦可不設置循環空轉狀態。In the second, fourth, and fifth embodiments, as the operating state of the substrate processing apparatus, the circulating idling state may not be provided.
作為朝就緒狀態轉移時之第1循環流路C1及/或第2循環流路C2內之藥液之排出方法,亦可使藥液暫時返回至藥液箱30,其後將藥液箱30內之藥液排出,而非經由分支排液配管85排出藥液。As a method of discharging the liquid medicine in the first circulation channel C1 and/or the second circulation channel C2 when shifting to the ready state, the liquid medicine can also be temporarily returned to the
亦可代替將第1循環配管31之各個別配管36之下游端連接於藥液箱30,而是將連接有複數個個別配管36之下游配管之下游端連接於藥液箱30。Instead of connecting the downstream end of each
亦可代替將各返還配管302之下游端連接於藥液箱30,而將連接有複數個返還配管302之返還共通配管之下游端連接於藥液箱30,亦可將各返還配管302之下游端連接於第1循環配管31。Instead of connecting the downstream end of each
作為泵37,亦可採用伸縮泵以外之泵。As the
儲存於藥液箱30中之液體並不限定於藥液,亦可為沖洗液等其他液體。The liquid stored in the
連接於同一個別配管36之供給配管22之數量可未滿2條,亦可為4條以上。The number of
設置於第1循環配管31之個別配管36之數量可未滿3條,亦可為5條以上。The number of
於第1〜第5實施形態中,亦可在介裝於上游側部分33中之加熱器38之下游側設置除氣部600。如圖5中虛線所示,除氣部600包含洩放配管601、及介裝於洩放配管601中之洩放閥602。洩放配管601之上游端連接於上游側部分33中之加熱器38之下游側。洩放配管601之下游端連接於排液箱80。In the first to fifth embodiments, the
於藥液(處理液)之循環停止之情形時,有時加熱器38內積存之藥液(處理液)會氣化。有時會因藥液(處理液)之氣化而導致加熱器38內之壓力上升。When the circulation of the chemical liquid (processing liquid) is stopped, the chemical liquid (processing liquid) accumulated in the
於圖5之虛線所示之變形例中,由於在加熱器38之下游側設置除氣部600,因此即便於藥液氣化之情形時,產生之氣體亦會被除氣部600排出。藉此,可抑制或防止藥液(處理液)之循環停止之情形時之加熱器38內之壓力上升。In the modified example shown by the broken line in FIG. 5, since the
該變形例中,洩放配管601之下游端亦可連接於藥液箱30,而非連接於排液箱80。又,除氣部600亦可設置於加熱器38之上游側,而非設置於加熱器38之下游側。In this modification, the downstream end of the
基板處理裝置1、201、301、401、501並不限定於對圓板狀之基板W進行處理之裝置,亦可為對多角形之基板W進行處理之裝置。The
亦可將上述所有構成中之2個以上構成加以組合。Two or more of the above-mentioned configurations may be combined.
對本發明之實施形態進行了詳細說明,但該等只不過是為了使本發明之技術性內容變得明瞭而使用之具體例,本發明不應限定於該等具體例來解釋,本發明之精神及範圍僅由隨附之申請專利範圍來限定。The embodiments of the present invention have been described in detail, but these are only specific examples used to make the technical content of the present invention clear. The present invention should not be limited to these specific examples for interpretation. The spirit of the present invention And the scope is limited only by the scope of the attached patent application.
1:基板處理裝置 1a:外壁 2:處理單元 3:控制裝置 3a:電腦本體 3b:CPU 3c:主記憶裝置 3d:周邊裝置 3e:輔助記憶裝置 3f:讀取裝置 3g:通信裝置 3h:顯示輸入裝置 4:流體盒 5:藥液櫃 6:腔室 7:FFU 8:隔壁 9:擋閘 10:旋轉夾盤 11:夾盤銷 12:旋轉基座 13:旋轉馬達 14:杯 14a:傾斜部 14b:導引部 14c:液體接收部 15:杯升降單元 16:沖洗液噴嘴 17:沖洗液配管 18:沖洗液閥 21:吐出噴嘴 21a:吐出口 22:供給配管 23:吐出閥 26:噴嘴移動單元 30:藥液箱 31:第1循環配管 31a:上游端 31b:下游端 32:第2循環配管 33:上游側部分 34:下游側部分 35:共通配管 36:個別配管 37:泵 38:加熱器 39:過濾器 40:第1循環閥 41:缸頭 42:泵頭 43:缸筒 44:一側泵室 45:另一側泵室 46:移動構件 47:伸縮管 48:一側空氣室 49:一側藥液室 50:另一側空氣室 51:另一側藥液室 55:一側藥液導入埠 56:另一側藥液導入埠 57:藥液導出埠 61:過濾器本體 62:殼體 63:孔 64:除氣配管 65:除氣閥 66:排液配管 67:排液閥 70:第2循環閥 71:調節器 72:壓力感測器 80:排液箱 81:排出配管 82:排出閥 83:排液配管 85:分支排液配管 86:分支排液閥 87:藥液補充配管 88:藥液補充閥 89:返還閥 90:維護畫面 91:系統再開按鈕 92:緊急停止按鈕 93:搬送停止按鈕 94:循環停止按鈕 95:循環停止空轉按鈕 96:循環空轉按鈕 100:偵測感測器 101:偵測感測器 201:基板處理裝置 211A:第1並聯配管 211B:第2並聯配管 212A:第1並聯閥 212B:第2並聯閥 239A:第1過濾器 239B:第2過濾器 301:基板處理裝置 302:返還配管 303:加熱器 304:流量計 305:流量調整閥 306:返還閥 307:第2吐出閥 308:調節器 401:基板處理裝置 402:機器下游區域 403:污染狀態計測裝置 404:個別排液配管 405:個別排液閥 406:機器下游閥 501:基板處理裝置 502:旁路配管 503:旁路閥 504:旁路過濾器 600:除氣部 601:洩放配管 602:洩放閥 A1:旋轉軸線 A2:擺動軸線 C:載體 C1:第1循環流路 C2:第2循環流路 C3:第3循環流路 CB1:旁路循環流路 CB2:旁路循環流路 CR:中心機器人 CS1:藥液供給裝置 CS2:藥液供給裝置 CS3:藥液供給裝置 CS4:藥液供給裝置 CS5:藥液供給裝置 H1:手部 H2:手部 HC:主機電腦 IR:分度機器人 LP:裝載埠 P:程式 P1:連接位置 P11:檢測位置 P12:計測位置 P2:連接位置 P3:連接位置 P4:連接位置 P5:連接位置 P61:連接位置 P62:連接位置 P9:連接位置 RM:可移媒體 S1:步驟 S2:步驟 S3:步驟 S4:步驟 S5:步驟 S11:步驟 S12:步驟 S13:步驟 S14:步驟 S16:步驟 S17:步驟 S18:步驟 S21:步驟 S22:步驟 S23:步驟 S24:步驟 S31:步驟 S32:步驟 S33:步驟 S34:步驟 S41:步驟 S42:步驟 S43:步驟 S51:步驟 S52:步驟 S61:步驟 S62:步驟 S71:步驟 S72:步驟 S73:步驟 TW:塔 W:基板 X1:一次側空間 X2:二次側空間 1: Substrate processing equipment 1a: outer wall 2: processing unit 3: control device 3a: Computer body 3b: CPU 3c: Main memory device 3d: peripheral devices 3e: auxiliary memory device 3f: Reading device 3g: communication device 3h: Display input device 4: fluid box 5: Medicine cabinet 6: Chamber 7: FFU 8: Next door 9: Block gate 10: Rotating chuck 11: Chuck pin 12: Rotating base 13: Rotating motor 14: Cup 14a: Inclined part 14b: Guiding Department 14c: Liquid receiving part 15: Cup lifting unit 16: flushing fluid nozzle 17: Flushing fluid piping 18: Flushing fluid valve 21: Spit out the nozzle 21a: spit out 22: Supply piping 23: Discharge valve 26: Nozzle moving unit 30: medicine tank 31: 1st cycle piping 31a: Upstream 31b: Downstream 32: 2nd cycle piping 33: Upstream part 34: Downstream part 35: Common piping 36: Individual piping 37: Pump 38: heater 39: filter 40: 1st circulation valve 41: Cylinder head 42: Pump head 43: cylinder 44: One side pump room 45: Pump room on the other side 46: Moving components 47: Telescopic tube 48: One side air chamber 49: One side of the liquid chamber 50: Air chamber on the other side 51: The other side of the liquid chamber 55: One side of the liquid introduction port 56: The other side of the liquid introduction port 57: medicinal solution outlet port 61: Filter body 62: shell 63: Hole 64: Degassing piping 65: Degas valve 66: Drainage piping 67: Drain valve 70: 2nd circulation valve 71: regulator 72: Pressure sensor 80: Drain tank 81: Discharge piping 82: discharge valve 83: Drainage piping 85: Branch drain piping 86: Branch drain valve 87: Liquid replenishment piping 88: Liquid replenishment valve 89: return valve 90: Maintenance screen 91: System restart button 92: Emergency stop button 93: Transport stop button 94: Cycle stop button 95: Cycle stop idling button 96: Cycle idle button 100: detection sensor 101: detection sensor 201: Substrate processing equipment 211A: 1st parallel piping 211B: 2nd parallel piping 212A: 1st parallel valve 212B: 2nd parallel valve 239A: 1st filter 239B: 2nd filter 301: Substrate processing device 302: return piping 303: heater 304: Flowmeter 305: Flow adjustment valve 306: Return Valve 307: 2nd discharge valve 308: regulator 401: substrate processing device 402: Downstream area of the machine 403: Pollution state measuring device 404: Individual drain piping 405: Individual drain valve 406: Machine Downstream Valve 501: Substrate processing device 502: Bypass piping 503: Bypass valve 504: Bypass filter 600: degassing part 601: Relief Piping 602: Relief Valve A1: Rotation axis A2: swing axis C: carrier C1: The first circulating flow path C2: Second circulation flow path C3: 3rd circulation flow path CB1: Bypass circulation flow path CB2: Bypass circulation flow path CR: Central Robot CS1: Liquid chemical supply device CS2: Liquid chemical supply device CS3: Liquid chemical supply device CS4: Liquid chemical supply device CS5: Liquid medicine supply device H1: Hand H2: Hands HC: host computer IR: Indexing robot LP: load port P: program P1: Connection position P11: Detection position P12: Measurement position P2: Connection location P3: Connection location P4: Connection location P5: Connection position P61: Connection position P62: Connection position P9: Connection location RM: removable media S1: Step S2: Step S3: steps S4: Step S5: steps S11: steps S12: steps S13: steps S14: Step S16: steps S17: steps S18: steps S21: Step S22: Step S23: Step S24: steps S31: Step S32: Step S33: Step S34: Step S41: Step S42: Step S43: Step S51: Step S52: Step S61: Step S62: Step S71: Step S72: Step S73: Step TW: Tower W: substrate X1: Primary side space X2: Secondary space
圖1係自上方觀察本發明之第1實施形態之基板處理裝置之示意圖。 圖2係水平觀察上述基板處理裝置所具備之處理單元之內部之示意圖。 圖3係表示上述基板處理裝置之硬體之方塊圖。 圖4係用以說明藉由上述基板處理裝置進行之基板處理之一例之步驟圖。 圖5係表示上述基板處理裝置之藥液供給裝置之示意圖。 圖6係用以說明圖5所示之泵之構成之圖。 圖7係用以說明圖5所示之過濾器之構成之圖。 圖8係表示圖3所示之顯示輸入裝置中之維護畫面之一例之圖。 圖9係用以說明就緒狀態之上述藥液供給裝置中之藥液之流動之圖。 圖10係用以說明循環停止空轉狀態之上述藥液供給裝置中之藥液之流動之圖。 圖11係用以說明循環空轉狀態之上述藥液供給裝置中之藥液之流動之圖。 圖12係用以說明上述基板處理裝置之動作狀態自就緒狀態向空轉狀態轉移之流程圖。 圖13係用以說明循環停止空轉狀態下進行之處理之流程之圖。 圖14係用以說明自循環停止空轉狀態朝就緒狀態轉移後不久之藥液之流動之圖。 圖15係用以說明循環空轉狀態下進行之處理之流程之圖。 圖16係用以說明自循環空轉狀態轉朝就緒狀態轉移後不久之藥液之流動之圖。 圖17係用以說明泵之行程時間與附著之微粒數之關係之圖。 圖18係表示本發明之第2實施形態之基板處理裝置之藥液供給裝置之示意圖。 圖19係用以說明就緒狀態之上述藥液供給裝置中之藥液之流動之圖。 圖20係用以說明自循環停止空轉狀態朝就緒狀態轉移後不久之藥液之流動之圖。 圖21A係表示本發明之第3實施形態之基板處理裝置之藥液供給裝置之示意圖。 圖21B係表示本發明之第3實施形態之變形例之示意圖。 圖21C係表示本發明之第4實施形態之基板處理裝置之藥液供給裝置之示意圖。 圖22係用以說明就緒狀態之藥液供給裝置中執行之處理之內容之流程圖。 圖23係用以說明用於特定出微粒產生源之第1方法之流程圖。 圖24係用以說明用於特定出微粒產生源之第2方法之流程圖。 圖25係表示本發明之第5實施形態之基板處理裝置之藥液供給裝置之示意圖。 圖26係用以說明就緒狀態之藥液供給裝置中執行之處理之內容之流程圖。 圖27係用以說明自循環停止空轉狀態朝就緒狀態轉移後不久之藥液之流動之圖。 圖28係表示圖27之後之狀態之圖。 圖29係表示圖28之後之狀態之圖。 Fig. 1 is a schematic view of the substrate processing apparatus of the first embodiment of the present invention viewed from above. FIG. 2 is a schematic view of the inside of the processing unit included in the above-mentioned substrate processing apparatus viewed horizontally. Fig. 3 is a block diagram showing the hardware of the above-mentioned substrate processing apparatus. FIG. 4 is a step diagram for explaining an example of substrate processing performed by the above-mentioned substrate processing apparatus. Fig. 5 is a schematic diagram showing a chemical liquid supply device of the above-mentioned substrate processing apparatus. Fig. 6 is a diagram for explaining the structure of the pump shown in Fig. 5. Fig. 7 is a diagram for explaining the structure of the filter shown in Fig. 5. Fig. 8 is a diagram showing an example of a maintenance screen in the display input device shown in Fig. 3; Fig. 9 is a diagram for explaining the flow of the liquid medicine in the liquid medicine supply device in the ready state. Fig. 10 is a diagram for explaining the flow of the liquid medicine in the liquid medicine supply device in the cyclically stopped idling state. Fig. 11 is a diagram for explaining the flow of the liquid medicine in the liquid medicine supply device in the circulating idling state. FIG. 12 is a flowchart for explaining the transition of the operation state of the substrate processing apparatus from the ready state to the idling state. FIG. 13 is a diagram for explaining the flow of processing performed in the idling state of the cycle stop. Fig. 14 is a diagram for explaining the flow of the liquid medicine shortly after the circulation stops and the idling state transitions to the ready state. Fig. 15 is a diagram for explaining the processing flow in the circulating idling state. FIG. 16 is a diagram for explaining the flow of the liquid medicine shortly after the transition from the circulating idle state to the ready state. Figure 17 is a diagram for explaining the relationship between the stroke time of the pump and the number of particles attached. Fig. 18 is a schematic diagram showing a chemical liquid supply device of a substrate processing apparatus according to a second embodiment of the present invention. Fig. 19 is a diagram for explaining the flow of the liquid medicine in the liquid medicine supply device in the ready state. FIG. 20 is a diagram for explaining the flow of the liquid medicine shortly after the transition from the circulating stop idling state to the ready state. Fig. 21A is a schematic diagram showing a chemical liquid supply device of a substrate processing apparatus according to a third embodiment of the present invention. Fig. 21B is a schematic diagram showing a modification of the third embodiment of the present invention. Fig. 21C is a schematic diagram showing a chemical liquid supply device of a substrate processing apparatus according to a fourth embodiment of the present invention. Fig. 22 is a flowchart for explaining the content of the processing executed in the liquid medicine supply device in the ready state. FIG. 23 is a flowchart for explaining the first method for identifying the source of particle generation. FIG. 24 is a flowchart for explaining the second method for identifying the source of particle generation. Fig. 25 is a schematic diagram showing a chemical liquid supply device of a substrate processing apparatus according to a fifth embodiment of the present invention. Fig. 26 is a flowchart for explaining the content of the processing executed in the liquid medicine supply device in the ready state. Fig. 27 is a diagram for explaining the flow of liquid medicine shortly after the transition from the circulating stop idling state to the ready state. Fig. 28 is a diagram showing the state after Fig. 27; Fig. 29 is a diagram showing the state after Fig. 28;
1:基板處理裝置
2:處理單元
4:流體盒
5:藥液櫃
6:腔室
10:旋轉夾盤
21:吐出噴嘴
21a:吐出口
22:供給配管
23:吐出閥
30:藥液箱
31:第1循環配管
31a:上游端
31b:下游端
32:第2循環配管
33:上游側部分
34:下游側部分
35:共通配管
36:個別配管
37:泵
38:加熱器
39:過濾器
40:第1循環閥
64:除氣配管
65:除氣閥
66:排液配管
67:排液閥
70:第2循環閥
71:調節器
72:壓力感測器
80:排液箱
81:排出配管
82:排出閥
83:排液配管
85:分支排液配管
86:分支排液閥
87:藥液補充配管
88:藥液補充閥
89:返還閥
600:除氣部
601:洩放配管
602:洩放閥
C1:第1循環流路
C2:第2循環流路
CS1:藥液供給裝置
P1:連接位置
P2:連接位置
P3:連接位置
P11:檢測位置
TW:塔
W:基板
1: Substrate processing equipment
2: processing unit
4: fluid box
5: Medicine cabinet
6: Chamber
10: Rotating chuck
21: Spit out the
Claims (23)
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JP6994438B2 (en) | 2018-07-11 | 2022-01-14 | 信越化学工業株式会社 | Cross-linked organosilicon resin, its manufacturing method, and cosmetics |
JP2022161268A (en) * | 2021-04-08 | 2022-10-21 | 株式会社Screenホールディングス | Processing liquid distribution method and processing liquid supply device |
JP7201882B1 (en) * | 2021-07-13 | 2023-01-10 | 千代田化工建設株式会社 | Management system, management method and management program |
KR20230038866A (en) * | 2021-09-13 | 2023-03-21 | 세메스 주식회사 | Method for treating a substrate and an apparatus for treating a substrate |
KR102657375B1 (en) * | 2021-12-30 | 2024-04-12 | 세메스 주식회사 | Apparatus and method for processing substrate |
JP2023141806A (en) * | 2022-03-24 | 2023-10-05 | 株式会社Screenホールディングス | Circulation device, and control method thereof |
JP2023142369A (en) * | 2022-03-25 | 2023-10-05 | 株式会社Screenホールディングス | Circulation device, and control method of circulation device |
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