JP4377295B2 - Processing method and processing system - Google Patents

Description

  The present invention relates to a processing method and a processing system for cleaning an object to be processed such as a semiconductor wafer or LCD substrate glass.

  For example, in a semiconductor device manufacturing process, a semiconductor wafer (hereinafter referred to as “wafer”) is subjected to processing such as cleaning using various processing liquids. As a system for performing such processing, there is known a system in which a plurality of wafers are arranged in parallel in a chamber and held by a rotor, and a processing liquid is sprayed on the wafer while rotating the wafer by the rotor. Also known are a single wafer type and a batch type in which a processing liquid is stored in a processing tank and a plurality of wafers are immersed in the processing liquid.

  By the way, in such a processing system, various abnormal situations may occur. For example, there is a risk that the temperature of the processing liquid or the supply pressure deviates from a predetermined range and the wafer is not sufficiently processed or the wafer is damaged. In addition, if the pressure in the chamber is too high, the chamber seal mechanism is damaged, or the processing liquid tank is damaged, there is a risk that the atmosphere of the processing liquid with high reactivity leaks to the outside. Therefore, it is necessary to provide an abnormality detection sensor for detecting various types of abnormalities in the processing system so that appropriate actions can be taken when abnormalities are detected in the processing system to avoid worsening abnormal situations. There is also a need to minimize wafer damage.

  2. Description of the Related Art Conventionally, a processing system has been proposed in which, when an abnormality occurs in a processing system, the wafer chemical solution processing is stopped, and the wafer is repaired by performing a water washing process or a drying process (for example, patents). Reference 1).

JP-A-8-102459

  However, in the conventional processing system, when an abnormality occurs, the chemical treatment of the wafer is relieved in a halfway state, and there is a possibility that a defect may occur in the wafer. Therefore, there is a concern that the wafer is wasted.

  An object of the present invention is to provide a processing method and a processing system that can reliably relieve a target object even if an abnormality occurs in the processing system.

In order to solve the above problems, according to the present invention, the processing is performed after a processing step of processing a target object with a first liquid, which is a chemical solution, and a processing step of processing a target target with the first liquid, A processing method including a processing step of processing a target object with a second liquid that is the same type of liquid as the first liquid and has a higher processing effect than the first liquid, and is a first method used for processing the target object. One of a processing step of recovering the liquid or the second liquid, reusing it as the first liquid, and processing the target object with the first liquid, and a processing step of processing the target object with the second liquid when an abnormality occurs in the process, characterized in that Ru is switched to the other processing steps, the processing method. Is provided.

The first liquid is the same kind of chemical solution as the first liquid, and is performed after the processing step of processing the target object with the first liquid, which is a chemical liquid, and the processing step of processing the target object with the first liquid. A processing method of processing a target object with a second liquid having a higher processing effect than the liquid, wherein the first liquid or the second liquid used for the processing of the target object is recovered and the first liquid is recovered. The type of abnormality when an abnormality occurs in any one of the processing step of processing the object to be processed with the first liquid and the processing step of processing the object to be processed with the second liquid. It recognizes, make decisions whether to continue or abort the process, if it is determined to continue, characterized in that Ru is switched to the other processing steps, the processing method is provided.

When the processing step of processing the object to be processed with the first liquid is switched to the processing step of processing the object to be processed with the second liquid, the processing step of processing the object to be processed with the second liquid after switching, Before switching, the remaining time of the processing step for processing the object to be processed with the first liquid and the time for the processing step for processing the object to be processed with the second liquid may be performed for a total time. In addition, when the processing step of processing the object to be processed with the second liquid is switched to the processing step of processing the object to be processed with the first liquid, the processing step of processing the object to be processed with the first liquid after switching. May be performed for a longer time than the remaining time of the processing step of processing the object to be processed with the second liquid before switching.

Further, in the normal processing step, the first liquid passes through the first filter and is supplied to the object to be processed, and the abnormality occurs during the processing step of processing the object to be processed with the second liquid. In the case of switching from the second liquid to the processing step for processing the object to be processed with the first liquid, the first liquid passes through the second filter having a finer mesh than the first filter and is supplied to the object to be processed. It's also good.

Said processing step abnormalities, leakage of the liquid atmosphere from the supply system of the liquid chemical, the temperature of the chemical anomalies, or, it is also possible that an abnormal flow rate of the liquid medicine.

In addition, the detection value of the abnormality detection sensor for detecting an abnormality in the processing step is steady in either one of the processing step for processing the target object with the first liquid and the processing step for processing the target object with the second liquid. If it is within the primary abnormality range that deviates from the range, the processing process may be continued while warning is performed, and if the detected value of the abnormality detection sensor deviates from the primary abnormality range, the process may be switched to the other processing process. .

In addition, according to the present invention, the processing unit that processes the object to be processed with the chemical liquid, the supply system that supplies the first liquid that is the chemical liquid, and the same kind of chemical liquid as the first liquid that is processed more than the first liquid. A supply system for supplying a highly effective second liquid, a circulation circuit for recovering the first liquid or the second liquid used for processing the object to be processed and regenerating it as the first liquid, and an abnormality for detecting an abnormality in each part A detection sensor and a control unit that switches supply by the two supply systems, and the control unit supplies the chemical solution by any one of the two supply systems and processes the object to be processed. When an abnormality is detected by any of the abnormality detection sensors for detecting an abnormality in the supply system, control is performed to switch to the other supply system and supply the chemical to the object to be processed to continue the process. , A processing system is provided.

When the control unit switches from the first liquid supply system to the second liquid supply system when processing the target object with the first liquid, the control unit processes the target object with the first liquid before switching. Control is performed so that the object to be processed is treated with the second liquid for the time that is the sum of the remaining time set to be performed and the time that has been set to treat the object to be treated with the second liquid. It's also good. Further, when the processing liquid is supplied by the second liquid supply system to switch the first liquid supply system during processing of the target object, the processing target is processed with the second liquid before switching. It is good also as controlling so that a to-be-processed object may be processed with a 1st liquid for a long time rather than the remaining time of the time set to (1).

In the supply system of the first liquid, a first filter and a second filter having a finer mesh than the first filter are provided in parallel. In the normal supply of the first liquid, the first liquid is When the first liquid is supplied to the object to be processed after passing through the first filter and is switched to the first liquid supply system due to an abnormality in the second liquid supply system, The liquid may be supplied to the object to be processed through a second filter having a finer mesh than the first filter.

The abnormality in the supply system may be detected by a leak sensor provided in the processing liquid tank area, a temperature sensor provided in the chemical liquid tank, or a flow rate sensor provided in the chemical supply path.

In addition, the control unit determines whether the detection value of the abnormality detection sensor is in a steady range, a primary abnormal range that deviates from the normal range, or a deviation from the primary abnormal range, and the control unit When it is determined that the detected value of the abnormality detection sensor is in the primary abnormality range while the object to be processed is processed by either the first liquid supply system or the second liquid supply system , a warning is given. It is possible to control to supply the processing liquid by switching to the other supply system when it is determined that the detection value of the abnormality detection sensor has deviated from the primary abnormality range while continuing the treatment process. It's also good. Furthermore, when the control unit determines that the detection value of the abnormality detection sensor is in the primary abnormality range that deviates from the normal range, the control unit does not switch the supply system, and the detection value of the abnormality detection sensor does not change the primary abnormality range. When it is determined that the value has deviated, it may be switched to the other supply system.

According to the present invention, even if an abnormality occurs in the treatment process while the treatment process is being performed with any one of the same type of chemical solution , switching to a treatment process in which treatment with another similar chemical solution is performed, The processing body can be sufficiently processed. Furthermore, by continuously performing the subsequent processing steps, a series of processes on the object to be processed can be completed, and the object to be processed can be reliably relieved. Accordingly, it is possible to prevent the object to be processed from becoming a defective product and being wasted. In addition, the detection range of the abnormality detection sensor is set to the steady range and the primary abnormality range, and only warnings are given within the primary abnormality range, and the processing process is switched only when the primary abnormality range is deviated. Thus, depending on the degree of abnormality, it is possible to avoid the suspension of processing and to relieve the object to be processed.

  Hereinafter, a preferred embodiment of the present invention will be described based on a processing system configured to perform a cleaning process for removing a polymer attached to a wafer as an example of an object to be processed. As shown in FIG. 1, the processing system 1 includes a carrier loading / unloading unit 2 for loading / unloading a carrier C containing a plurality of substantially disk-shaped wafers W, and a wafer W from the carrier C loaded into the carrier loading / unloading unit 2. Wafer transport unit 3 for picking up and transporting the wafer W, processing unit 5 for performing a cleaning process on the wafer W transported by the wafer transport unit 3, and a processing liquid tank unit 6 for storing or generating a processing liquid used in the processing unit 5 It has. Furthermore, the control part 7 which controls the process process in the processing system 1 is provided.

  The carrier loading / unloading unit 2 is provided with a carrier mounting table 10 on which the carrier C is mounted. The wafers W are stored in the carrier C in a state where a plurality of, for example, 25 wafers W are arranged in a substantially parallel posture with a predetermined interval.

  A wafer transfer device 11 is disposed in the wafer transfer unit 3. The wafer transfer device 11 holds and transfers the wafers W to the 25 transfer arms 12 one by one. These transfer arms 12 collectively take out 25 wafers W from the carrier C, and collectively deliver the taken 25 wafers W to a rotor rotating mechanism 20 disposed in a processing unit 5 described later. Twenty-five wafers W are taken out from the rotating mechanism 20 and stored in the carrier C at once.

  The processing unit 5 includes a wafer transfer / posture conversion area 15 that transfers and changes the posture of the wafer W, and a substrate processing apparatus 16 that stores the wafer W and supplies a processing liquid to process it. And a processing device area 17.

  The wafer transfer / posture conversion area 15 is provided with a rotor rotating mechanism 20 that holds and rotates 25 wafers W. Further, a posture conversion mechanism 21 that changes the orientation of the rotor rotation mechanism 20 and a rotor rotation mechanism moving mechanism 22 that moves the rotor rotation mechanism 20 and the posture conversion mechanism 21 are provided. By driving the posture conversion mechanism 21 and the rotor rotation mechanism moving mechanism 22, as shown in FIG. 2, the wafer loading / removing position PR1 facing the wafer transfer device 11 in the vertical posture and the wafer W in the horizontal posture are transferred to the substrate processing apparatus. In this configuration, the rotor rotation mechanism 20 is moved to the processing position PR <b> 2 arranged inside the robot 16.

  As shown in FIG. 2, the rotor rotating mechanism 20 is attached to the motor 27, the rotating shaft 28 of the motor 27, and the tip of the rotating shaft 28, and holds 25 wafers W arranged substantially parallel to each other at a predetermined interval. A rotor 30 is provided. The motor 27 is supported by a casing 31 that surrounds the rotary shaft 28, and the casing 31 is supported by the attitude conversion mechanism 21. In addition, a disc-shaped lid 32 is disposed between the casing 31 and the rotor 30.

  The rotor 30 includes a pair of disks 35 and 36 that are arranged at intervals so that 25 wafers W can be loaded. The disk 35 is attached to the tip of the rotating shaft 28, and the disk 36 is disposed substantially parallel to the disk 35. A plurality of, for example, six holding rods 40 for holding the peripheral edge of the wafer W are provided between the disks 35 and 36. The holding bar 40 is disposed so as to surround the outer periphery of the wafer W inserted between the disks 35 and 36. Each holding rod 40 is formed with 25 holding grooves (not shown) arranged at predetermined intervals. By inserting the peripheral portions of the wafers W into these holding grooves, 25 wafers W are held in parallel at a predetermined interval in a state where each wafer W is held by six holding grooves. It has become so. Of the six holding rods 40, two adjacent holding rods 40, 40 are movable outwardly, and the wafer W is opened by opening between the two holding rods 40, 40. The rotor 30 can be charged.

  Although not shown, a rotation detector is provided as an abnormality detection sensor that measures the rotation speed, torque, and the like of the motor 27. The detection value of the rotation detector is monitored by the control unit 7.

  As shown in FIG. 3, the substrate processing apparatus 16 includes a double chamber 53 constituted by an outer chamber 51 and an inner chamber 52 that moves in and out of the outer chamber 51.

  In the outer chamber 51, chemical liquid C2 (C2a, C2b) as a chemical liquid treatment liquid, pure water as a rinse treatment liquid, and IPA (isopropyl alcohol) gas for drying treatment are supplied. An outer chamber nozzle 61 is provided. A discharge pipe 62 for draining and exhausting the inside of the outer chamber 51 is disposed below the outer chamber 51. The chemical liquid C2a and the chemical liquid C2b are the same type of chemical liquid C2, the chemical liquid C2a is a new liquid that has not been used for processing the wafer W, and the chemical liquid C2b is the chemical liquid C2a that has been used for processing the wafer. , C2b is recovered and regenerated to be usable again in wafer processing. That is, the chemical C2a is a liquid having a higher processing effect on the wafer W than the chemical C2b.

  A rotor inlet / outlet 63 for allowing the rotor 30 to enter and exit from the inside of the outer chamber 51 is formed at the front end of the outer chamber 51. An annular seal mechanism 65 is disposed along the inner peripheral surface of the rotor inlet / outlet 63. The rotor inlet / outlet 63 can be opened and closed by a lid (not shown) when the rotor 30 is retracted from the inside of the outer chamber 51. An annular inner chamber inlet / outlet 71 for allowing the inner chamber 52 to enter or leave the inner side of the outer chamber 51 is formed at the rear end portion of the outer chamber 51. An annular seal mechanism 72 is disposed along the outer peripheral surface of the inner chamber inlet / outlet 71. Although not shown, a pressure gauge is provided as an abnormality detection sensor for measuring the internal pressure in the outer chamber 51.

  The inner chamber 52 is formed in a cylindrical shape. Inside the inner chamber 52, an inner chamber nozzle 81 for supplying chemical liquid C1 (C1a, C1b) as a processing liquid for chemical processing and pure water as a processing liquid for rinsing processing is disposed. A discharge pipe 82 for draining and exhausting the inside of the inner chamber 52 is disposed below the inner chamber 52. The chemical liquid C1a and the chemical liquid C1b are the same type of chemical liquid C1, the chemical liquid C1a is a new liquid (second liquid) that has not been used for processing the wafer W, and the chemical liquid C1b is used for wafer processing. This is a liquid (first liquid) obtained by collecting the used chemical liquids C1a and C1b and regenerating them again for use in wafer processing. That is, the chemical liquid C1a is a liquid having a higher processing effect on the wafer W than the chemical liquid C1b.

  At the front end of the inner chamber 52, a rotor inlet / outlet 83 for allowing the rotor 30 to enter or exit relative to the inner chamber 62 is formed. An annular seal mechanism 85 is disposed along the inner peripheral surface of the rotor inlet / outlet 83. An opening 91 is formed at the rear end of the inner chamber 52. Further, an annular seal mechanism 92 is disposed along the inner peripheral surface of the opening 91. Although not shown, a pressure gauge is provided as an abnormality detection sensor for measuring the internal pressure in the inner chamber 52.

  A cover 95 formed in a cylindrical shape is provided behind the outer chamber 51. The cover 95 has a smaller diameter than the inner chamber 52 and the inner chamber inlet / outlet 71. The inner chamber 52 moves forward and backward while moving the opening 91 along the cover 62 behind the outer chamber 51.

  When the inner chamber 52 has exited from the outer chamber 51 and the rotor 30 is disposed inside the outer chamber 51, the rotor inlet / outlet 63 is closed by the lid 32, and the inner circumference of the rotor inlet / outlet 63 is The space between the surface and the outer peripheral surface of the lid 32 is sealed by a seal mechanism 65. On the other hand, the front end portion of the inner chamber 52 is disposed in the inner chamber inlet / outlet 71 so that the inner peripheral surface of the inner chamber inlet / outlet 71 is surrounded by the rotor inlet / outlet 83 of the inner chamber 52. Sealing mechanisms 72 and 85 seal between the outer peripheral surface of the front end portion of the inner chamber 52 and the inner chamber inlet / outlet 71 and between the inner chamber inlet / outlet 71 and the inner peripheral surface of the rotor inlet / outlet 83, respectively. As described above, the atmosphere in the outer chamber 51 is sealed by the sealing mechanisms 65, 72, and 85 to prevent the atmosphere in the outer chamber 51 from leaking to the outside or the outside atmosphere from entering the outer chamber 51. It is like that. Further, the seal mechanism 92 seals between the inner peripheral surface of the opening 91 formed at the rear end portion of the inner chamber 52 and the outer peripheral surface of the cover 95. Thereby, the atmosphere between the inner chamber 52 and the cover 95 is sealed, and the chemical atmosphere generated from the inner surface of the inner chamber 52 can be prevented from leaking to the outside.

  On the other hand, when the inner chamber 52 is disposed in the outer chamber 51 and the rotor 30 is disposed in the inner chamber 52 (two-dot chain line in FIG. 3), the rotor inlets and outlets 63 and 83 are closed by the lid 32. Is done. Sealing mechanisms 65 and 85 seal between the inner peripheral surface of the rotor inlet / outlet 63 and the outer peripheral surface of the lid body 32 and between the inner peripheral surface of the rotor inlet / outlet port 83 and the outer peripheral surface of the lid body 32, respectively. The The rear end portion of the inner chamber 52 is disposed in the inner chamber inlet / outlet 71, and the inner peripheral surface of the inner chamber inlet / outlet 71 is surrounded by the opening 91 of the inner chamber 52. Sealing mechanisms 72 and 92 seal between the outer peripheral surface of the rear end portion of the inner chamber 52 and the inner chamber inlet / outlet 71 and between the opening 91 and the inner peripheral surface of the rotor inlet / outlet 83, respectively. That is, the atmosphere in the inner chamber 52 is sealed by the sealing mechanisms 85 and 92, and the atmosphere in the outer chamber 51 is sealed by the sealing mechanisms 65, 72, and 92, so that the atmosphere in the inner chamber 52 is changed to the outer chamber. It is possible to prevent the inside of the outer chamber 51 from leaking into the inner chamber 52, the atmosphere inside the outer chamber 51 from entering into the inner chamber 52, the atmosphere inside the outer chamber 51 from leaking outside, or the outside atmosphere from entering into the outer chamber 51. It is like that.

  FIG. 4 shows the seal mechanisms 65, 72, 85, and 92. Since the seal mechanisms 65, 72, 85, and 92 have substantially the same configuration, the configuration of the seal mechanism 65 will be described as a representative. The seal mechanism 65 includes two annular deformable portions 100A and 100B and an annular support portion 101 that supports the deformable portions 100A and 100B. In addition, gas passages 102A and 102B for supplying a gas such as nitrogen are provided in the respective deformation portions 100A and 100B. In each of the deformable portions 100A and 100B, when gas is supplied from the gas path 102A or 102B into the deformable portion 100A or 100B, the deformable portion 100A or 100B expands toward the center and becomes in a sealable state. On the other hand, when gas is sucked from the deformed portion 100A or 100B by the gas passage 102A or 102B, the deformable portion 100A or 100B contracts and the seal is released. In addition, pressure gauges 103A and 103B as abnormality detection sensors are interposed in the gas passages 102A and 102B, respectively. The detected values of the pressure gauges 103A and 103B are monitored by the control unit 7. Similarly, the detection values of the pressure gauges 103A and 103B provided in the seal mechanisms 72, 85 and 92 are also monitored by the control unit 7, respectively.

  As shown in FIG. 1, the substrate processing apparatus area 17 is provided with leak sensors 108 and 109 as abnormality detection sensors for detecting the chemical atmosphere of the chemical supplied in the substrate processing apparatus 16. The leak sensor 109 is provided above the leak sensor 108. The detection values of the leak sensors 108 and 109 are monitored by the control unit 7.

  As shown in FIG. 1, the processing liquid tank unit 6 stores a tank area 112 in which a chemical liquid tank 111 for storing chemical liquid C1a is installed, a tank area 114 in which a chemical liquid tank 113 for storing chemical liquid C1b is installed, and a chemical liquid C2a. The tank area 116 in which the chemical tank 115 is installed and the tank area 118 in which the chemical tank 117 for storing the chemical C2b is installed are configured. Each of the chemical liquid tanks 111, 113, 115, and 117 has a sealed structure so that a highly reactive chemical liquid atmosphere can be prevented from leaking to the outside.

  In the tank area 112, leak sensors 121A and 121B are installed as abnormality detection sensors for detecting a leak (leak) of the chemical C1a. In the tank area 114, leak sensors 122A and 122B are installed as abnormality detection sensors for detecting a leak of the chemical C1b. In the tank area 116, leak sensors 123A and 123B are installed as abnormality detection sensors for detecting a leak of the chemical C2a. In the tank area 118, leak sensors 124A and 124B are installed as abnormality detection sensors for detecting a leak of the chemical C2b. The detection values of the leak sensors 121A, 121B, 122A, 122B, 123A, 123B, 124A, 124B are monitored by the control unit 7.

  As shown in FIG. 2, in the tank area 112, the leak sensor 121 </ b> A is disposed near the lower part of the chemical liquid tank 111. The other leak sensor 121B is provided above the leak sensor 121A. Therefore, when a chemical leak occurs from the chemical tank 111, the leak is detected only by the leak sensor 121A immediately after the leak starts, and when the leak amount increases after a while, the leak is also detected by the leak sensor 121B. It has become so. Similarly, also in the tank area 114, leak sensors 122A and 122B are arranged in the vicinity of the lower part of the chemical liquid tank 113 and in positions higher than that, respectively. In the tank area 116, the vicinity of the lower part of the chemical liquid tank 115 and in positions higher than that. In the tank area 118, leak sensors 124A and 124B are arranged in the vicinity of the lower part of the chemical liquid tank 117 and in a position higher than the leak sensors 123A and 123B, respectively.

  FIG. 5 shows a supply system for supplying chemical solutions C1a and C1b from the chemical solution tanks 111 and 113 to the substrate processing apparatus 16. As shown in FIG. 5, a supply path 131 for feeding chemical solutions C1a and C1b is connected to the inner chamber nozzle 81 of the substrate processing apparatus 16. Connected to the supply path 131 are a first supply path 132 for supplying the chemical liquid C1a from the chemical liquid tank 111 and a second supply path 133 for supplying the chemical liquid C1b from the chemical liquid tank 113.

  The base end of the first supply path 132 is immersed in the chemical solution C1a in the chemical solution tank 111. In the first supply path 132, a pump 141, a filter 142, a flow meter 143 as an abnormality detection sensor, and an on-off valve 144 are provided in this order from the chemical liquid tank 111 side. A supply source 150 for supplying the chemical liquid C1a to the chemical liquid tank 111 is connected to the chemical liquid tank 111 via a supply path 151. A heater 152 for heating the chemical solution C1a stored in the chemical solution tank 111 is attached. Furthermore, a thermometer 153 as an abnormality detection sensor for measuring the temperature of the chemical liquid C1a in the chemical liquid tank 111, and a liquid level gauge 154a as an abnormality detection sensor for measuring the height of the liquid level of the chemical liquid C1a in the chemical liquid tank 111, 154b and 154c. The liquid level gauges 154a, 154b, and 154c are arranged in this order from above. In the present embodiment, the chemical C1a supply system 155 that supplies the chemical C1a is configured by the chemical tank 111 and the first supply path 132.

  The base end of the second supply path 133 is immersed in the chemical solution C1b in the chemical solution tank 113. In the second supply path 133, a pump 161, a filter 162, a flow meter 163 as an abnormality detection sensor, a heater 164, and a switching on / off valve 165 are provided in this order from the chemical tank 113 side.

  Further, a circulation path 177 is connected to the second supply path 133 via a switching on / off valve 165. The downstream end of the circulation path 177 is connected to the chemical tank 113. Then, by switching the switching on / off valve 165, the circulation path 177 is closed and the chemical solution C1b is fed to the supply path 131 side, and the circulation path 177 is opened and the second supply path 133 is opened to the circulation path 177. The state in which C1b is fed is switched.

  The chemical liquid tank 113 includes a thermometer 181 as an abnormality detection sensor for measuring the temperature of the chemical liquid C1b in the chemical liquid tank 113, and a liquid as an abnormality detection sensor for measuring the height of the liquid level of the chemical liquid C1b in the chemical liquid tank 113. Surface meters 182a, 182b, and 182c are provided. The liquid level gauges 182a, 182b, and 182c are provided in this order from above.

  The discharge passages 186 and 187 are connected to the discharge pipe 82 of the inner chamber 52 described above via a switching on-off valve 185. The downstream end of the recovery path 187 is connected to the chemical tank 113. The pure water discharged from the inner chamber 52 by the discharge pipe 82 is drained by the discharge path 186, and the chemical liquid C1 is collected in the chemical liquid tank 113 by the recovery path 187 or drained by the discharge path 186. ing.

  The chemical liquid C1 (C1a, C1b) recovered in the chemical tank 113 by the recovery path 187 is fed into the second supply path 133 by the drive of the pump 161, and the foreign matter is removed and cleaned by the filter 162. After the temperature is adjusted by 164, the temperature is again collected in the chemical tank 113 through the circulation path 177. Thus, the chemical solution C1 is circulated through the second supply path 133 and the circulation path 177 so that the used chemical solution C1 can be reused and reused as the chemical solution C1b. In the present embodiment, the chemical liquid circulation circuit 191 as a circulation circuit is configured by the second supply path 133, the circulation path 177 and the chemical liquid tank 113. Further, in the present embodiment, the chemical solution C1b supply system 192 that supplies the chemical solution C1b is configured by the recovery path 187, the second supply path 133, the circulation path 177, and the chemical liquid tank 113.

  The opening / closing of the opening / closing valve 144 of the first supply path 132 and the switching opening / closing valve 165 of the second supply path 133 are controlled by a control command of the control unit 7. The detection values of the flow meter 143, the thermometer 153, the liquid level meters 154a, 154b and 154c, the flow meter 163, the thermometer 181, and the liquid level meters 182a, 182b and 182c are monitored by the control unit 7, respectively. .

  Although not shown, an abnormality detection sensor is also provided in each piping area where the supply path 131, the first supply path 132, the second supply path 133, the circulation path 177, the discharge pipe 82, and the recovery path 187 are respectively disposed. A leak sensor is provided as appropriate. And when the chemical | medical solution C1 leaks from the discharge pipe 82, the supply path 131, the 1st supply path 132, the 2nd supply path 133, and the circulation path 177, the leak of a chemical | medical solution can each be detected by the leak sensor of each piping area. It has become. The detection values of these leak sensors are also monitored by the control unit 7, respectively.

  As described above, each part of the processing system 1 includes various abnormality detection sensors such as the rotation detector of the motor 27, the leak sensors 108 and 109 of the substrate processing apparatus area 17, the pressure gauge of the outer chamber 51, and the inner chamber 52. , Pressure sensors 103A, 103B of the seal mechanisms 65, 72, 85, 92, leak sensors 121A, 121B, 122A, 122B, 123A, 123B, 124A, 124B of the tank areas 112, 114, 116, 118 A flow meter 143 in the first supply path 132, a thermometer 153 and a liquid level gauge 154 in the chemical liquid tank 111, a flow meter 163 in the second supply path 133, a thermometer 181 and a liquid level gauge 182 in the chemical liquid tank 113, and a leak sensor in the piping area Etc. are provided. Detection signals from these abnormality detection sensors are electrically sent to the control unit 7, whereby the detection values of the abnormality detection sensors are monitored by the control unit 7. Therefore, when an abnormality occurs in the processing system 1, the control unit 7 can recognize the location of the abnormality, the type of abnormality, and the degree of abnormality.

  The control unit 7 stores a processing recipe R1 set to sequentially perform a plurality of processing steps as shown in FIG. 6, and can control the processing steps in the substrate processing apparatus 16 according to the processing recipe R1. It has become. The processing recipe R1 includes two chemical solution processing steps (S11, S12) for processing with the same type of chemical solution C1, a rinse processing step (S13), and two chemical solution processing steps (S14, S15) for processing with the same type of chemical solution C2. And a rinsing process (S16) and an IPA drying process (S17). The contents of the processing recipe R1 will be described in detail later.

  The control unit 7 also includes a rotation detector for the motor 27, a pressure gauge for the outer chamber 51, a pressure gauge for the inner chamber 52, the pressure gauges 103A and 103B for the seal mechanisms 65, 72, 85, and 92, and the first supply path 132. Steady ranges set for detection values of various abnormality detection sensors such as a flow meter 143, a thermometer 153 of the chemical liquid tank 111, a flow meter 163 of the second supply path 133, and a thermometer 181 of the chemical liquid tank 113, respectively. , Primary abnormality range is stored. That is, as shown in FIG. 7, the detection value of each abnormality detection sensor includes a steady value within the steady range, a primary abnormal value within the primary abnormal range that deviates from the normal range, and a secondary value that deviates from the primary abnormal range. It can be classified into any of the secondary abnormal values within the abnormal range. Then, according to the processing flow shown in FIG. 8, the control unit 7 determines whether or not the detection value of each abnormality detection sensor is within the steady range set for each detection value. When deviating from the range, it is further judged whether or not it is in the primary abnormality range.

  On the other hand, for the leak sensors 121A and 121B in the tank area 112, the steady range and the primary abnormal range are determined as follows. That is, when no chemical solution leak is detected in the leak sensors 121A and 121B, the control unit 7 determines that the detected value is in the steady range, and the chemical solution atmosphere is detected only by the lower leak sensor 121A. Therefore, the control unit 7 determines that the detected value is within the primary abnormality range. When both of the chemical leaks are detected by the leak sensors 121A and 121B, it is presumed that the amount of the chemical leak has increased. Therefore, the control unit 7 deviates from the primary abnormal range and detects the secondary abnormal value. It comes to judge that it became. Similarly, for the leak sensors 122A, 122B, 123A, 123B, 124A, and 124B in the other tank areas 114, 116, and 118, when the chemical leak is detected only by the leak sensor 122A, 123A, or 124A, the detected value Are both in the primary abnormality range, and both the leak sensors 122A and 122B, the two leak sensors 123A and 123B, or the two leak sensors 124A and 124B detect both the chemical liquid leaks, the detected values are respectively primary abnormalities. It is judged that a secondary abnormal value has been reached outside the range. Similarly, the leak sensors 108 and 109 in the substrate processing apparatus area 17 also determine that the detected value is in the primary abnormality range when the chemical leak is detected only by the lower leak sensor 108, and the leak sensors 108 and 109 If a chemical leak is detected at 109, it is determined that the detected value has deviated from the primary abnormal range and has become a secondary abnormal value. In addition, leak sensors (not shown) in the piping area are also installed in the upper and lower parts of the piping area, and if a chemical leak is detected only by the lower leak sensor, it is determined that the detected value is in the primary abnormality range. However, when both chemical leaks are detected by both leak sensors, it is determined that the detected value has deviated from the primary abnormal range and has become a secondary abnormal value.

  For the liquid level gauges 154a, 154b, and 154c, the steady range and the primary abnormal range are determined as follows. That is, when the chemical C1a is not detected in the uppermost liquid level gauge 154a and the liquid is detected in the liquid level gauge 154b, the control unit 7 determines that the detected value is in the steady range, and the liquid level gauge 154b. When the chemical solution C1a is not detected in FIG. 5 and the chemical solution C1a is detected in the lowermost level gauge 154c, the control unit 7 determines that the detected value is in the primary abnormality range. When the chemical level C1a is not detected in the liquid level meter 154c, the remaining amount of the chemical level C1a is insufficient, so that the control unit 7 deviates from the primary abnormal range and becomes a secondary abnormal value. Judge that Similarly, for the liquid level gauges 182a, 182b, and 182c, when the chemical liquid C1b is not detected in the uppermost liquid level gauge 182a and the liquid is detected in the liquid level gauge 182b, the control unit 7 If it is determined that the liquid level gauge 182b does not detect the chemical liquid C1b and the lowermost liquid level gauge 182c detects the chemical liquid C1b, the control unit 7 determines that the detected value is within the primary abnormality range. Judge that there is. When the chemical level C1b is not detected in the liquid level gauge 182c, the remaining amount of the chemical level C1b is insufficient, so that the control unit 7 deviates from the primary abnormal range and becomes a secondary abnormal value. It has come to be judged.

  When the control unit 7 determines that the detection value of each abnormality detection sensor is within the normal range when the wafer W is processed in the substrate processing apparatus 16 according to the processing recipe R1, the processing recipe R1 is followed. If the detection value of any abnormality detection sensor exceeds the steady range, the control unit 7 continues the processing process according to the type or degree of abnormality, Determine whether to stop or perform a relief process.

  For example, when it is determined that the detection value of one of the abnormality detection sensors is within the primary abnormality range, a warning is issued and the occurrence of the primary abnormality is notified to the operator. The control unit 7 continues the processing process while generating a warning. However, when it is determined that the detection value of any one of the abnormality detection sensors has deviated from the primary abnormality range, the control unit 7 stops the processing process according to the recognized abnormality type, or performs the processing process by the relief process. To decide whether to continue.

  The relief process for the wafer W varies depending on the type of abnormality that has occurred and the state of the processing system 1, but includes the following. For example, an abnormality detection sensor for detecting an abnormality in the chemical liquid C1a supply system 155 shown in FIG. 5, that is, the leak sensors 121A and 121B, the first supply path, shown in FIG. If a secondary abnormal value is detected by any of the flow meter 143 of 132, the thermometer 153 of the chemical tank 111, the level gauges 154a, 154b, and 154c, or the leak sensor in the piping area, the chemical solution by the chemical solution C1a supply system 155 There is a risk that an abnormality occurs in the supply of C1a and the chemical treatment process using the chemical C1a is not performed normally. Therefore, the supply system for supplying the chemical solution C1 is switched from the chemical solution C1a supply system 155 to the chemical solution C1b supply system 192, the supply of the chemical solution C1a is stopped, and the chemical solution C1b is supplied to perform the chemical treatment. Since the chemical liquid C1b is the same type of chemical liquid as the chemical liquid C1a, the chemical liquid processing with the chemical liquid C1 on the wafer W can be sufficiently performed by changing the processing time and the like. Furthermore, the processing steps scheduled after the chemical treatment with the chemical solution C1a can also be sequentially performed to complete a series of processing steps for the wafer W. Similarly, if a secondary abnormal value is detected by any of the abnormality detection sensors that detect an abnormality in the chemical C1b supply system 192 during the chemical treatment process using the chemical C1b, the chemical C1b supply system 192 is switched off. By switching to the chemical solution C1a supply system 155, the supply of the chemical solution C1b can be stopped, and the chemical solution C1a can be supplied to perform the chemical treatment. If an abnormality of the chemical solution C1a supply system 155 or an abnormality of the chemical solution C1b supply system 192 occurs during the chemical treatment process using the chemical solution C1b or the chemical treatment process using the chemical solution C1a, the control unit 7 Controls to execute the repair processing recipes R2, R3, and R4 shown in FIGS. 9, 10, and 11. The relief processing recipes R2, R3, and R4 will be described in detail later.

  Next, a processing method for the wafer W using the processing system 1 configured as described above will be described. First, a carrier C containing 25 wafers W is placed on the carrier placing table 10 as shown in FIG. Then, 25 wafers W are collectively taken out from the carrier C by the transfer arms 12 of the wafer transfer device 11.

  In the wafer transfer / posture change area 15, the rotor rotating mechanism 20 is moved to the wafer loading / leaving position PR 1, and the two holding rods 40, 40 are opened by an opening / closing mechanism (not shown). Then, by driving the wafer transfer device 11, the transfer arm 12 holding the wafer W enters the rotor 30 from between the holding bars 40A and 40B, the two holding bars 40 and 40 are closed, and the transfer arm 12 is moved to the rotor. Exit from 30. In this way, 25 wafers W are transferred from the transfer arm 12 to the rotor 30.

  Next, the rotor rotating mechanism 20 is raised, and the rotor rotating mechanism 20 is rotated by about 90 ° to be in the horizontal posture. Then, the rotor rotating mechanism 20 is moved toward the substrate processing apparatus 16, and the rotor 30 enters the rotor inlet / outlet 63.

  The substrate processing apparatus 16 waits in a state where the inner chamber 52 is disposed inside the outer chamber 52 (a state indicated by a two-dot chain line in FIG. 5). Then, a lid (not shown) is moved to open the rotor inlet / outlet 63, the rotor 30 is advanced from the rotor inlet / outlet 63 into the inner chamber 52, and the wafer W is loaded into the inner chamber 52. The rotor inlet / outlet 63 is closed by the lid 32. Further, the atmosphere in the outer chamber 51 and the inner chamber 52 is sealed by the sealing mechanisms 65, 72, 85, and 92.

  When the rotor 30 and the wafer W are loaded into the inner chamber 52, the process according to the process recipe R1 shown in FIG. 6 is started. First, by driving the motor 27, the rotor 30 is rotated at a predetermined rotational speed, and the wafer W is rotated integrally with the rotor 30. Under the control of the control unit 7, the on-off valve 165 is opened in the chemical solution C1b supply system 192 to drive the pump 161, and the chemical solution C1b whose temperature is adjusted to a predetermined temperature is supplied from the inner chamber nozzle 81 to rotate the wafer W. Spray on. In this way, the chemical treatment process (S11) with the chemical C1b is performed for a predetermined time.

  When the chemical solution processing step (S11) with the chemical solution C1b is completed, the switching on / off valve 165 is closed by the control of the control unit 7, the supply of the chemical solution C1b from the chemical solution C1b supply system 192 is stopped, and the open / close valve in the chemical solution C1a supply system 155 144 is opened, the pump 141 is driven, the chemical solution C1a whose temperature is adjusted to a predetermined temperature is supplied from the inner chamber nozzle 81, and sprayed onto the rotating wafer W. In this way, the chemical treatment process (S12) with the chemical C1a is performed for a predetermined time. The chemical liquid C1a is a new liquid, has a higher processing effect than the chemical liquid C1b, and can reliably process the wafer W. Further, by using the chemical solution C1b regenerated before using the chemical solution C1a, the amount of the chemical solution C1 used can be reduced, and the cost can be saved.

  As shown in FIG. 5, the chemical liquids C1a and C1b discharged from the inner chamber 52 through the discharge pipe 82 are collected in the chemical liquid tank 113 via the recovery path 187, and further, the chemical liquid circulation circuit 191 is driven by driving the pump 161. It circulates inside, is filtered by the filter 162, and is temperature-controlled by the heater 164. And it is again used for the chemical | medical solution processing process (S11) of the wafer W as chemical | medical solution C1b.

  When the chemical solution processing step (S12) with the chemical solution C1a is completed, the supply of the chemical solution C1a is stopped under the control of the control unit 7 to stop the supply of the chemical solution C1a, and the chemical solution C1a attached to the wafer W is shaken off by the rotation of the wafer W. Thereafter, while rotating the wafer W, pure water is supplied from the inner chamber nozzle 81, and the wafer W is rinsed with pure water (S13).

  When the rinsing process (S13) for a predetermined time with pure water is completed, the pure water adhering to the wafer W is removed by shaking off the rotation of the wafer W, and then the inner chamber 52 is withdrawn from the outer chamber 51. Seal the atmosphere.

  Next, while the wafer W is rotated at a predetermined rotational speed in the outer chamber 51, the chemical liquid C2b whose temperature is adjusted to a predetermined temperature is supplied from the outer chamber nozzle 61, and a chemical liquid processing step using the chemical liquid C2b is performed (S14). ). When the chemical solution processing step (S14) for a predetermined time with the chemical solution C2b is completed, the chemical solution C2a whose temperature is adjusted to a predetermined temperature is supplied from the outer chamber nozzle 61 while rotating the wafer W at a predetermined rotation speed. A chemical treatment process is performed (S15). Since the chemical liquid C2a is a new liquid and has a higher cleanliness than the chemical liquid C2b, the processing effect is high and the wafer W can be processed reliably. Further, by using the chemical solution C2b regenerated before using the chemical solution C2a, the amount of the chemical solution C2 used can be reduced, and the cost can be saved. When the chemical solution processing step (S15) for a predetermined time with the chemical solution C2a is completed, pure water is supplied from the inner chamber nozzle 81 while rotating the wafer W at a predetermined rotation speed, and the wafer W is rinsed with pure water ( S16).

  When the rinse process step (S16) for a predetermined time with pure water is completed, the wafer W is dried by discharging the IPA gas from the outer chamber nozzle 61 while rotating the wafer W at a predetermined rotation speed (S17).

  When the IPA drying process (S17) is completed and the process recipe R1 is completed, the rotation of the rotor 30 is stopped and the inside of the outer chamber 51 is purged with nitrogen gas. The wafer W is withdrawn out of the double chamber 53 and unloaded from the double chamber 53. Then, the rotor rotation mechanism 20 is moved to the wafer loading / retreating position PR1, and the wafers W are taken out from the rotor 30 by the respective transfer arms 12 of the wafer transfer device 11 and placed in the carrier C on the carrier mounting table 10. Store together.

  The above is a series of steps in the processing system 1, but an abnormality occurs in the detection value of the abnormality detection sensor monitored by the control unit 7 while the processing recipe R <b> 1 is being executed in the substrate processing apparatus 16. The following operations are performed. That is, according to the processing flow shown in FIG. 7, the control unit 7 monitors whether or not the detection value of each abnormality detection sensor is within the steady range (S21), and the detection value exceeds the steady range. If it is determined that it has deviated from the primary abnormality range, it is determined (S22). If it is in the primary abnormality range, a warning is given (S23), and the processing process of the processing recipe R1 is continued. If it is not the primary abnormality range, it is determined that it is in the secondary abnormality range, and it is determined whether or not it is possible to shift to the relief process according to the recognized abnormality type (S24). If the process does not proceed to the relief process (S25), the processing process is stopped (S26).

  For example, when a primary abnormal value is detected by any abnormality detection sensor that detects an abnormality of the chemical C1b supply system 192 during the chemical treatment process (S11) with the chemical C1b, the chemical C1b supply system 192 is detected. The supply of the chemical solution C1b is continued as it is. However, if a secondary abnormal value is detected by any of the abnormality detection sensors, it is determined whether or not it is possible to proceed to the relief process (S24). When the process proceeds to the relief step (S25), the control unit 7 confirms that no secondary abnormal value is detected by each abnormality detection sensor that detects an abnormality in the chemical solution C1a supply system 155, and is shown in FIG. The rescue processing recipe R2 being executed is executed. First, under the control of the control unit 7, the switching on / off valve 165 is closed to stop the supply of the chemical solution C1b from the chemical solution C1b supply system 192, the open / close valve 144 is opened to drive the pump 141, and the chemical solution C1a supply system 155 The supply of the chemical solution C1a is started. Thus, the supply of the chemical solution C1b by the chemical solution C1b supply system 192 is switched to the supply of the chemical solution C1a by the chemical solution C1a supply system 155, and the chemical solution processing step (S11) by the chemical solution C1b to the chemical solution processing step (S31) by the chemical solution C1a of the relief processing recipe R2 ). Thereby, a chemical | medical solution process can be continued. Since the chemical liquid C1a is the same type of chemical liquid as the chemical liquid C1b, the chemical liquid treatment of the wafer W with the chemical liquid C1 can be sufficiently performed.

  The chemical solution processing (S31) with the chemical solution C1a is executed by shifting to the relief processing recipe R2 in the processing time of the chemical solution processing step (S11) set in the processing recipe R1 before switching to the chemical solution processing step (S31). It is preferable to carry out only the same time as the total time of the remaining time and the processing time of the chemical solution processing step (S12) set in the processing recipe R1. In this case, the end time of the chemical liquid processing step (S11) scheduled in the processing recipe R1 can be matched with the end time of the chemical liquid processing step (S31) by the chemical liquid C1a in the relief processing recipe R2. Further, it may be performed for a shorter time than the total time of the remaining time of the chemical treatment process (S11) and the time of the chemical treatment process (S12). Also in this case, since the chemical solution C1a is a new solution and has a higher processing effect than the chemical solution C1b, the wafer W can be sufficiently processed. In this way, the chemical liquid processing step (S31) performs chemical processing on the wafer W to the same degree as when the chemical processing step (S11) using the chemical C1b and the chemical processing step (S12) using the chemical C1a are performed in the normal processing recipe R1. Can do.

  Thereafter, the same rinsing process (S33) as the rinsing process (S13) with pure water is performed, the inner chamber 52 is withdrawn from the outer chamber 51, and the same chemical process (S34) as the chemical process (S14) with the chemical C2b. The same chemical treatment process (S35) as the chemical treatment process (S15) with the chemical C2a, the same rinse treatment process (S36) as the rinse treatment process (S16), and the same dry treatment process (S37) as the drying treatment process (S17) with IPA Are successively performed. In this way, after processing according to the relief processing recipe R2, the wafer W is unloaded from the double chamber 53 in the same manner as the normal unloading method described above. When the wafer W is unloaded, the recovery operation of the chemical solution C1b supply system 192 is performed.

  Further, for example, when a primary abnormal value is detected by any one of the abnormality detection sensors that detect an abnormality of the chemical liquid C1a supply system 155 during the chemical liquid treatment step (S12) with the chemical liquid C1a, the chemical liquid C1a is supplied. The supply of the chemical C1a is continued without switching the system 155. However, if a secondary abnormal value is detected by any of the abnormality detection sensors, it is determined whether or not it is possible to proceed to the relief process (S24). When the process proceeds to the relief step (S25), the controller 7 confirms that secondary abnormality values are not detected by the abnormality detection sensors that detect abnormality of the chemical solution C1b supply system 192, and is shown in FIG. The rescue processing recipe R3 being executed is executed. First, under the control of the control unit 7, the on-off valve 144 is closed to stop the supply of the chemical solution C1b from the chemical solution C1a supply system 155, the switching on-off valve 165 is opened to drive the pump 161, and the chemical solution C1b supply system 192 The supply of the chemical solution C1b is started. Thus, the supply of the chemical solution C1a by the chemical solution C1a supply system 155 is switched to the supply of the chemical solution C1b by the chemical solution C1b supply system 192, and the chemical solution processing step (S12) by the chemical solution C1a to the chemical solution processing step (S41) by the chemical solution C1b of the relief processing recipe R3 ). Thereby, a chemical | medical solution process can be continued. Since the chemical solution C1b is a regenerative solution and has a lower processing effect than the chemical solution C1a, the chemical solution processing step (S41) with the chemical solution C1b in the relief processing recipe R3 is set in the processing recipe R1 before switching to the chemical solution processing step (S41). Of the processing time of the chemical solution processing step (S12), it is preferable to perform control so that it is performed for a longer time than the remaining time not executed due to the shift to the relief processing recipe R3. Thereby, the chemical treatment of the wafer W can be sufficiently performed even with the chemical C1b having a low processing effect.

  When the chemical solution processing step (S41) using the chemical solution C1b is completed, the processing steps (S13 to S13) set to be performed continuously after the chemical solution processing (S11) using the chemical solution C1b in the processing recipe R1 as in the relief processing recipe R3. The same processing steps (S33 to S37) as S17) are continued. In this way, after processing according to the relief processing recipe R3, the wafer W is unloaded from the double chamber 53 in the same manner as the normal unloading method described above. When the wafer W is unloaded, the chemical liquid C1a supply system 155 is restored.

  Thus, an abnormality occurs in either the chemical liquid C1b supply system 192 or the chemical liquid C1a supply system 155, and the chemical liquid treatment process (S11) with the chemical liquid C1b or the chemical liquid treatment process (S12) with the chemical liquid C1a is not performed normally. Even if it is in a state, the chemical solution C1a is supplied from the chemical solution C1a supply system 155 as a substitute for the chemical solution C1b, or the chemical solution C1b is supplied from the chemical solution C1b supply system 192 as a substitute for the chemical solution C1a. Alternatively, the chemical treatment process (S31) can be continued, or the chemical treatment process (S41) can be continued instead of the chemical treatment process (S12). Further, by continuously performing the processing steps (S33 to S37) similar to the processing steps (S13 to S17) that are set to be performed continuously after the chemical processing (S12) with the chemical solution C1a in the processing recipe R1. The wafer W can be relieved in a state in which a series of processing of the wafer W is completed and the processing effect substantially the same as that of the processing recipe R1 is applied. Therefore, even if an abnormality occurs in the chemical solution C1b supply system 192 and the chemical solution C1a supply system 155, it is possible to prevent the wafer W from becoming a defective product due to processing abnormality and being wasted.

  In addition, as a case where abnormality is detected in the chemical C1b supply system 192, for example, when the chemical C1b leaks from the chemical tank 113 and the abnormality is detected by the leak sensors 122A and 122B in the tank area 114, the second supply When the chemical solution C1b leaks from the passage 133 and an abnormality is detected by a leak sensor in the piping area of the second supply passage 133, or the flow rate of the chemical solution C1b becomes a predetermined flow rate due to a failure of the pump 161 or the like in the second supply passage 133. When the abnormality is detected by the flowmeter 163 without being adjusted, or when the abnormality is detected by the thermometer 181 because the chemical liquid C1b in the chemical liquid tank 113 is not adjusted to the predetermined temperature due to the failure of the heater 164, Abnormality is detected by liquid level gauges 182a, 182b, 182c due to shortage of chemical C1b in tank 113 There is a case to be. Further, as a case where an abnormality is detected in the chemical liquid C1a supply system 155, for example, when the chemical liquid C1a leaks from the chemical liquid tank 111 and the abnormality is detected by the leak sensors 121A and 121B in the tank area 112, the first supply When the chemical C1a leaks from the passage 132 and an abnormality is detected by the leak sensor in the piping area of the first supply passage 132, or when the flow rate of the chemical C1a becomes a predetermined flow rate due to a failure of the pump 141 or the like in the first supply passage 132. When the abnormality is detected by the flow meter 143 without being adjusted, or when the abnormality is detected by the thermometer 153 because the chemical liquid C1a in the chemical liquid tank 111 is not adjusted to the predetermined temperature due to the failure of the heater 152, or supply Due to the failure of the source 150, the chemical liquid C1a in the chemical liquid tank 111 is insufficient, and the liquid level gauges 154a, 154b, There is a case where abnormality is detected by 54c.

  On the other hand, any of the abnormality detection sensors for detecting an abnormality in the chemical liquid C1a supply system 155 while performing the chemical liquid treatment process (S11) with the chemical liquid C1b or while performing the chemical liquid treatment process (S12) with the chemical liquid C1a. If a secondary abnormal value is detected by any one of the abnormality detection sensors that detect an abnormality in the chemical C1b supply system 192 at the same time, supply of the chemical C1a by the chemical C1a supply system 155 is detected. However, the supply of the chemical C1b by the chemical C1b supply system 192 may not be performed normally. In such a case, when the process proceeds to the relief process (S25), the relief process recipe R4 shown in FIG. 11 may be executed. That is, under the control of the control unit 7, the process proceeds to the repair process recipe R4 during the chemical process (S11) with the chemical C1b of the process recipe R1 or during the chemical process (S12) with the chemical C1a, and the repair process recipe In accordance with R4, a rinsing process (S51) with pure water is started, and the chemical solution C1 is washed away with pure water. After the rinsing process (S51), the inner chamber 52 is withdrawn from the outer chamber 51, and a drying process (S52) by IPA is performed. In this way, after processing according to the relief processing recipe R4, the wafer W is unloaded from the double chamber 53 in the same manner as the normal unloading method described above. When the wafer W is unloaded, the chemical C1a supply system 155 and the chemical C1b supply system 192 are restored. By performing such a relief processing recipe R4, it is possible to minimize damage to the wafer W.

  Further, during the chemical treatment process (S11, S12) using the chemicals C1a and C1b, the rotation detector of the motor 27, the leak sensor 108 in the substrate processing apparatus area 17, the pressure gauge in the outer chamber 51, and the pressure gauge in the inner chamber 52. When secondary abnormal values are detected by the pressure gauges 103A, 103B, etc. of the seal mechanisms 65, 72, 85, 92, a series of processing steps is performed by determining whether or not to proceed to the relief step (S24). Is stopped (S26). That is, the supply of the chemical solution C1b supply system 192 and the chemical solution C1a supply system 155 is immediately stopped, the chemical processing steps (S11, S12) are stopped, and then the wafer W is immediately unloaded from the substrate processing apparatus 16 and the recovery operation is performed. It is desirable. Thereby, when the chemical solution C1 atmosphere leaks from the substrate processing apparatus 16, it is possible to prevent damage such as corrosion from expanding.

  According to the processing system 1, even if an abnormality occurs in the chemical liquid C1b supply system 192 while the chemical liquid processing step (S11) is performed with the chemical liquid C1b, the supplied processing liquid is changed to the chemical liquid C1a of the same type as the chemical liquid C1b. By switching and performing the chemical solution treatment step (S31), the treatment with the chemical solution C1 can be sufficiently performed. Further, even if an abnormality occurs in the chemical liquid C1a supply system 155 while the chemical liquid treatment process (S12) is being performed with the chemical liquid C1a, the treatment liquid to be supplied is switched to the chemical liquid C1b of the same type as the chemical liquid C1a. By performing (S41), the treatment with the chemical C1 can be sufficiently performed. Further, after the processing with the switched chemical solution C1 (S31, S41), the processing steps (S13 to S17) similar to the processing steps (S13 to S17) set to be performed continuously after the chemical processing step (S11) in the processing recipe R1 ( By performing S33 to S37), the series of processing of the wafer W can be completed, and the wafer W can be reliably relieved. Therefore, it is possible to prevent the wafer W from becoming a defective product and being wasted. When a secondary abnormal value occurs in the chemical solution C1b supply system 192 or the chemical solution C1a supply system 155, the processing recipe R2 or R3 can be automatically started according to the determination of the control unit 7, which is safe.

  Further, if the detection value of the abnormality detection sensor is within the primary abnormality range, a warning (S23) is issued, and the processing recipe R1 is continued, and only when the primary abnormality range is deviated, the processing recipe R1 is shifted to the relief process (S25). Alternatively, the processing is automatically stopped (S26), so that the wafer W can be reliably processed according to the processing recipe R1 when the degree of abnormality is low. In addition, when the detection value of the abnormality detection sensor is in the primary abnormality range, a warning is generated to alert the operator and allow the operator to take appropriate measures, so that the abnormality of the processing system 1 deteriorates. Can be prevented.

  Although an example of a preferred embodiment of the present invention has been described above, the present invention is not limited to the embodiment described here. For example, in the present embodiment, the method of processing the wafer W using two different types of chemicals C1 and C2 has been described, but the content of the processing recipe R1 is not limited to this. In the present embodiment, when an abnormality occurs in the chemical solution C1b supply system 192 during the chemical solution processing step (S11), the chemical solution to be supplied is switched to the chemical solution C1a and the chemical solution processing step (S31) is performed. The case where the chemical solution C1b is switched to the chemical solution C1b and the chemical solution treatment step (S41) is performed when an abnormality occurs in the chemical solution C1a supply system 155 during the treatment step (S12) has been described. When an abnormality occurs in the chemical solution C2b supply system while performing (S14), the chemical solution to be supplied is switched to the same type of chemical solution C2a, and the same processing step as the chemical solution processing step (S14) is performed, or the chemical solution C2a When an abnormality occurs in the chemical solution C2a supply system during the chemical solution treatment step (S15), the chemical solution to be supplied is switched to the same type of chemical solution C2b. Liquid treatment step (S15) and may or subjected to the same processing steps. Also in this case, the wafer W can be relieved by sufficiently performing the treatment with the chemical C2.

  As shown in FIG. 12, the second supply path 133 may have a configuration in which a filter 162 and a second filter 201 that is finer than the first filter are provided in parallel. In FIG. 12, between the pump 161 and the filter 162, the upstream end of the branch path 202 in which the filter 201 is interposed is connected to the middle of the second supply path 133 via the switching valve 203. The downstream end of the branch path 202 is connected to the middle of the second supply path 133 via the switching valve 204 between the filter 162 and the flow meter 163. Under the control of the control unit 7, the switching valves 203 and 204 are operated to switch between a state in which the chemical solution C 1 b flows through the filter 162 and a state in which the chemical solution C 1 b flows through the filter 201. Since the filter 201 has finer eyes than the filter 162, the chemical solution C1b can be cleaned more effectively than the filter 162. In such a configuration, in the chemical solution processing step (S11) of the normal processing recipe R1, the chemical solution C1b is supplied to the wafer W through the first filter 162, and the chemical solution processing step (S41) of the relief processing recipe R3. In this case, it is preferable that the chemical C1b passes through the second filter 201 and is supplied to the wafer W. If it does in this way, the cleanliness of the chemical | medical solution C1b supplied to the wafer W in a chemical | medical solution processing process (S41) can be raised, and the processing effect with respect to the wafer W can be improved.

  In the present embodiment, the chemical liquid C1a (second liquid) and the chemical liquid C1b (first liquid) are the same type of chemical liquid C1, the chemical liquid C1a is a new liquid having a high processing effect, and the chemical liquid C1b is a regenerated liquid. Although a case has been described, the relationship between the first liquid and the second liquid is not limited to this. For example, the present invention is preferably applied even when the concentration of the second liquid is higher than the concentration of the first liquid among the same kind of chemical liquid and the processing effect of the second liquid on the wafer W is higher than that of the first liquid. Can do. In the present embodiment, the processing method including two chemical processing steps (S11, S12) for processing with the same type of chemical C1 has been described. However, the processing method includes three or more processing steps for processing with the same type of processing liquid. The present invention can also be applied when performing the above. Furthermore, in the processing system 1 of the present embodiment, the two chemical liquid supply systems 155 and 192 for supplying the same type of chemical C1 to the wafer W are provided. However, a supply system for supplying the same type of processing liquid to the wafer W is provided. The present invention can also be applied to the case where three or more are provided.

  The processing system according to the present invention is not limited to the processing system in which the wafer W is cleaned, and other processing other than cleaning may be performed on the wafer W using various other processing liquids. good. Further, the form of the substrate processing apparatus is not limited to one that processes a plurality of wafers W while rotating them with a rotor. For example, the present invention can be applied to a processing system including a single-wafer type substrate processing apparatus and a processing system including a batch type substrate processing apparatus using a processing tank. Further, the object to be processed is not limited to a semiconductor wafer, but may be other LCD substrate glass, CD substrate, printed substrate, ceramic substrate, or the like.

It is the schematic plan view which showed the structure of the processing system concerning this Embodiment. It is the schematic side view which showed the structure of the processing system concerning this Embodiment. It is the longitudinal cross-sectional view which showed the structure of the substrate processing apparatus. It is explanatory drawing explaining the structure of a seal mechanism. It is explanatory drawing explaining the supply system of the chemical | medical solution C1. It is a flowchart of a process recipe. It is explanatory drawing explaining a steady range, a primary abnormal range, and a 2 o'clock or more range. It is a flowchart explaining the procedure which monitors the detection value of an abnormality detection sensor. It is a flowchart explaining relief process recipe R2. It is a flowchart explaining relief process recipe R3. It is a flowchart explaining relief process recipe R4. It is explanatory drawing explaining the supply system of the chemical | medical solution C1 concerning another embodiment.

Explanation of symbols

C1, C1a, C1b, C2, C2a, C2b Chemical liquid W Wafer 1 Processing system 7 Control unit 16 Substrate processing device 17 Substrate processing device area 103A, 103B Pressure gauge 108, 109 Leak sensor 112, 114, 116, 118 Tank area 121A, 121B, 122A, 122B, 123A, 123B, 124A, 124B Leak sensor 132 First supply path 133 Second supply path 111 Chemical liquid tank 113 Chemical liquid tank 143 Flowmeter 153 Thermometer 154a, 154b, 154c Liquid level gauge 155 Chemical liquid C1a supply system 163 Flowmeter 181 Thermometer 182a, 182b, 182c Level gauge 192 Chemical liquid C1b supply system

Claims (14)

It is performed after the processing step of processing the target object with the first liquid that is a chemical solution and the processing step of processing the target object with the first liquid. And a processing step of processing the object to be processed with the second liquid having a high processing effect ,
The first liquid or the second liquid used for processing the object to be processed is recovered and reused as the first liquid,
When an abnormality occurs in one of the processing steps of the process and treatment step of treating the workpiece in a second liquid for processing the object to be processed by the first fluid, that the Ru switched to the other treatment process Characteristic processing method. It is performed after the processing step of processing the target object with the first liquid that is a chemical solution and the processing step of processing the target object with the first liquid. And a processing step of processing the object to be processed with the second liquid having a high processing effect ,
The first liquid or the second liquid used for processing the object to be processed is recovered and reused as the first liquid,
When an abnormality occurs in any one of the processing step of processing the target object with the first liquid and the processing step of processing the target object with the second liquid, the type of abnormality is recognized, and the processing step the make decisions whether to continue or abort, if it is determined to continue, characterized in that Ru is switched to the other processing steps, the processing method. When the processing step of processing the object to be processed with the first liquid is switched to the processing step of processing the object to be processed with the second liquid, the processing step of processing the object to be processed with the second liquid after switching, 2. The method according to claim 1, wherein the remaining time of the processing step of processing the target object with the first liquid and the time of the processing step of processing the target object with the second liquid are performed for a total time before switching. 2. The processing method according to 2. When the processing step of processing the object to be processed with the second liquid is switched to the processing step of processing the object to be processed with the first liquid, the processing step of processing the object to be processed with the first liquid after switching, The processing method according to claim 1, wherein the processing is performed for a longer time than the remaining time of the processing step of processing the object to be processed with the second liquid before switching. In a normal processing step, the first liquid passes through the first filter and is supplied to the object to be processed.
  When an abnormality occurs during the processing step of processing the object to be processed with the second liquid, when the second liquid is switched to the processing step of processing the object with the first liquid, the first liquid is the first liquid. The processing method according to claim 1, wherein the processing method is supplied to the object to be processed through a second filter having a finer mesh than that of the first filter. The abnormality in the processing step is a leakage of a liquid atmosphere from a chemical supply system, an abnormality in a temperature of the chemical, or an abnormality in a flow rate of the chemical, according to any one of claims 1 to 5. Processing method. In either one of the processing step of processing the target object with the first liquid and the processing step of processing the target object with the second liquid,
  If the detection value of the abnormality detection sensor that detects an abnormality in the processing process is in the primary abnormality range that deviates from the normal range, the processing process is continued with warnings,
  The processing method according to claim 1, wherein when the detection value of the abnormality detection sensor deviates from the primary abnormality range, the processing is switched to the other processing step. A processing unit for processing the object to be processed with a chemical solution;
  A supply system for supplying a first liquid that is a chemical liquid; a supply system for supplying a second liquid that is the same kind of chemical liquid as the first liquid and has a higher processing effect than the first liquid;
  A circulation circuit that recovers the first liquid or the second liquid used for processing the object to be processed and regenerates the first liquid;
  An abnormality detection sensor for detecting abnormalities in each part;
  A control unit for switching supply by the two supply systems,
  When the abnormality is detected by one of the abnormality detection sensors for detecting an abnormality of the supply system while the control unit supplies the chemical solution by any one of the two supply systems and processes the object to be processed The processing system is characterized in that it switches to the other supply system and supplies the chemical solution to the object to be processed so as to continue the processing. When the control unit switches from the first liquid supply system to the second liquid supply system when processing the target object with the first liquid, the control unit processes the target object with the first liquid before switching. Control is performed so that the object to be processed is treated with the second liquid for the time that is the sum of the remaining time set to be performed and the time that has been set to treat the object to be treated with the second liquid. The processing system according to claim 8, wherein: When the control unit switches to the first liquid supply system while supplying the processing liquid by the second liquid supply system and processes the object to be processed, the second liquid supplies the processing object before switching. 10. The processing system according to claim 9, wherein the processing system is controlled to process the object to be processed with the first liquid for a longer time than the remaining time set to be processed. The first liquid supply system is provided in parallel with a first filter and a second filter that is finer than the first filter,
  In the normal supply of the first liquid, the first liquid passes through the first filter and is supplied to the object to be processed.
  When the first liquid is supplied by switching to the first liquid supply system due to an abnormality in the second liquid supply system, the first liquid is a second finer than the first filter. The processing system according to claim 8, wherein the processing system is supplied to an object to be processed through a filter. An abnormality in the supply system is detected by a leak sensor provided in a chemical solution tank area, a temperature sensor provided in a chemical solution tank, or a flow rate sensor provided in a chemical solution supply path. The processing system according to any one of 11. The control unit determines whether the detection value of the abnormality detection sensor is in a steady range, a primary abnormality range that deviates from the steady range, or a deviation from the primary abnormality range;
  The control unit determines that the detection value of the abnormality detection sensor is in a primary abnormality range while the object to be processed is processed by either the first liquid supply system or the second liquid supply system. Sometimes, continue the process with warnings,
  9. The method according to claim 8, wherein when it is determined that the detection value of the abnormality detection sensor has deviated from the primary abnormality range, the processing liquid can be controlled to be switched to the other supply system. The processing system in any one of -12. When the control unit determines that the detection value of the abnormality detection sensor is in the primary abnormality range that deviates from the steady range, the control unit does not switch the supply system, and the detection value of the abnormality detection sensor deviates from the primary abnormality range. The processing system according to any one of claims 8 to 13, characterized in that when it is determined that it has been performed, the system is switched to the other supply system.

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