JP2018157149A - Wafer processing device and wafer processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To supply a process liquid that flows in a circulation path, at a stable temperature to a wafer while preventing the temperature of the process liquid from being considerably varied even if an opening/closing state of a discharge valve is changed.SOLUTION: A wafer processing device 1 comprises: a pressure control unit 51 which causes a pressure control valve 53 to change a pressure of a process liquid in individual piping 43 in accordance with a detection value of a pressure sensor 52, thereby maintaining a pressure of the process liquid at a connection position P2 at a pressure setting value; and a control device 3 which sets a pressure setting value at a setting value for processing in at least a part of a processing period in which a non-processed wafer W is positioned in the wafer processing device 1, and sets the pressure setting value at a setting value for standby that is smaller than the setting value for processing, in at least a part of a standby period in which the non-processed wafer W is not positioned in the wafer processing device 1, such that a flow rate of the process liquid which circulates in circulation piping 41 during the standby period is matched or made close to a flow rate of the process liquid which circulates in the circulation piping 41 during the processing period.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomask substrates. Substrates, ceramic substrates, solar cell substrates and the like are included.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. Patent Document 1 discloses a single-wafer type substrate processing apparatus that processes substrates one by one.
The substrate processing apparatus of Patent Document 1 stores a processing liquid tank that stores processing liquid supplied to a substrate, a circulation path that circulates the processing liquid in the processing liquid tank, and sends the processing liquid in the processing liquid tank to the circulation path. A circulation pump and a heater for heating the treatment liquid flowing through the circulation path are provided. The substrate processing apparatus further includes a plurality of discharge valves for controlling the supply of the processing liquid from the circulation path to the plurality of processing units, and a relief valve arranged on the circulation path downstream of the plurality of processing units. .

JP2015-141980A

In Patent Document 1, a relief valve, which is one of pressure control valves, is arranged on a circulation path downstream of a plurality of processing units. When the relief pressure setting relief pressure does not change, the flow rate of the processing liquid flowing through the circulation path during the standby period when all the discharge valves are closed is less than the flow rate during the processing period of the substrate in which any discharge valve is opened. Become.
The temperature of the processing liquid flowing through the circulation path varies under the influence of the temperature around the circulation path. The degree of influence depends on the flow rate of the processing liquid flowing through the circulation path. That is, when the flow rate of the processing liquid is large, the processing liquid is not significantly affected by the ambient temperature, but when the flow rate of the processing liquid is small, the temperature of the processing liquid varies greatly due to the influence of the ambient temperature. Therefore, as in Patent Document 1, if the flow rate of the circulating fluid varies greatly according to the open / close state of the discharge bubble, there is a problem that the temperature of the circulating fluid also varies greatly accordingly.

  Further, the temperature of the treatment liquid flowing through the circulation path also depends on the length of the standby period. Immediately after shifting from the substrate processing period to the standby period, the temperature of the processing liquid hardly changes. However, as the standby period becomes longer, the temperature of the processing liquid gradually deviates from the temperature of the processing liquid during the substrate processing period. Therefore, when the processing liquid is supplied to the substrate after a long standby period, a processing liquid having a temperature significantly different from the intended temperature is supplied to the substrate.

Thus, when a processing liquid having a temperature different from the intended temperature is supplied to the substrate, the quality of the substrate processing such as the etching amount and the pattern collapse rate is adversely affected. In addition, when processing liquids having different temperatures are supplied to a plurality of substrates to be processed under the same processing conditions, there is a problem in that quality variation occurs between the plurality of substrates.
Therefore, one of the objects of the present invention is to supply a treatment liquid having a stable temperature to the substrate without greatly changing the temperature of the treatment liquid flowing through the circulation path even when the open / close state of the discharge valve changes. It is to provide a substrate processing apparatus and a substrate processing method that can be used.

  Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of reducing variations in temperature of processing liquid supplied to a plurality of substrates and reducing variations in quality among the plurality of substrates. That is.

  The invention described in claim 1 for achieving the above object includes a tank for storing a processing liquid, a substrate holding means for horizontally holding a substrate, and a processing liquid supplied from the tank held by the substrate holding means. A nozzle that discharges toward the substrate, a circulation pipe that circulates the processing liquid in the tank, a liquid feeding device that sends the processing liquid in the tank to the circulation pipe, and the circulation pipe by the liquid feeding device. A temperature controller for changing the temperature of the sent processing liquid by at least one of heating and cooling; a supply pipe for guiding the processing liquid from the circulation pipe to the nozzle; and the supply pipe, A discharge bar that switches between a discharge execution state in which the supply of the processing liquid from the supply pipe to the nozzle is executed and a discharge stop state in which the supply of the processing liquid from the supply pipe to the nozzle is stopped. A pressure sensor for detecting the pressure of the processing liquid at a connection position where the circulation pipe and the supply pipe are connected to each other, and a pressure control valve interposed in the circulation pipe at an interposed position downstream of the connection position A pressure at which the pressure of the processing liquid at the connection position is maintained at a pressure set value by causing the pressure control valve to change the pressure of the processing liquid in the circulation pipe in accordance with the detection value of the pressure sensor. In at least a part of a processing period in which a control unit and an unprocessed substrate are in the substrate processing apparatus, the pressure setting value is set to a processing set value, and a waiting period in which the unprocessed substrate is not in the substrate processing apparatus. At least in part, by setting the pressure setting value to a standby setting value that is smaller than the processing setting value, the flow rate of the processing liquid flowing through the circulation pipe during the standby period is increased. And a said circulation pipe or match the flow rate of the processing liquid flowing through the close control device to stop a substrate processing apparatus.

  According to this configuration, the processing liquid in the tank is sent to the circulation pipe by the liquid feeding device, and returns from the circulation pipe to the tank. The temperature of the processing liquid in the tank is adjusted to a temperature higher or lower than room temperature by a temperature controller. When the discharge valve enters the discharge execution state, a part of the processing liquid flowing in the circulation pipe is guided to the nozzle by the supply pipe and discharged from the nozzle toward the substrate. When the discharge valve enters the discharge stop state, the supply of the processing liquid from the supply pipe to the nozzle is stopped, and the discharge of the processing liquid from the nozzle is stopped.

  The pressure control valve is interposed in the circulation pipe at an insertion position downstream of the connection position where the circulation pipe and the supply pipe are connected to each other. The primary pressure of the pressure control valve, that is, the liquid pressure in the portion from the liquid feeding device to the interposition position in the circulation pipe is maintained at the pressure set value by the pressure control valve. The flow rate of the processing liquid flowing on the primary side of the pressure control valve changes not only according to the opening degree of the discharge valve but also according to the opening degree of the pressure control valve.

  When an unprocessed substrate, that is, a substrate that has not been processed by the substrate processing apparatus is present in the substrate processing apparatus, the control device sets the set value of the pressure of the processing liquid at the connection position where the circulation piping and the supply piping are connected to each other Set the pressure setting value to be the processing setting value. When there is no unprocessed substrate in the substrate processing apparatus, the control device sets the pressure setting value to the standby setting value. The standby setting value is smaller than the processing setting value. Therefore, when there is no unprocessed substrate in the substrate processing apparatus, the pressure loss at the pressure control valve decreases, and the flow rate of the processing liquid flowing through the circulation pipe increases.

  The set value for standby is set so that the flow rate of the processing liquid flowing through the circulation pipe during the standby period matches or approaches the flow rate of the processing liquid flowing through the circulation pipe during the processing period. Therefore, the difference between the flow rates in both periods decreases to zero or a value close thereto. Therefore, even if the standby period becomes longer, the temperature of the processing liquid flowing through the circulation path hardly changes. Thereby, even after the long standby period is over, the processing liquid having a stable temperature can be supplied to the plurality of substrates, and variation in quality among the plurality of substrates can be reduced.

In addition, a process means supplying the process liquid in a tank to a board | substrate via a circulation path, and drying the said board | substrate after that. The standby period is a period in which there is no unprocessed substrate in the substrate processing apparatus. The period in which only the processed substrate is in the substrate processing apparatus does not correspond to the standby period.
The control device may set the pressure setting value as the processing setting value during the entire processing period, or may set the pressure setting value as the processing setting value during only a part of the processing period. Similarly, the control device may set the pressure setting value to the standby setting value in the entire standby period, or may set the pressure setting value to the standby setting value only in a part of the standby period.

  The flow rate of the processing liquid flowing through the circulation pipe during the processing period varies depending on whether or not the nozzle is discharging the processing liquid, that is, the open / close state of the discharge valve. The flow rate of the treatment liquid flowing through the circulation pipe during the treatment period may be an average value (average flow rate) of the treatment liquid flowing through the circulation pipe during the treatment period, or the treatment liquid flowing through the circulation pipe during the treatment period May be the maximum value of the flow rate (maximum flow rate).

The pressure control valve may be a relief valve whose opening degree automatically changes according to the primary pressure, or an electric valve whose opening degree is changed by an electric actuator.
The relief valve is a valve that reduces the primary side pressure to less than the set relief pressure when the primary side pressure of the relief valve rises to the set relief pressure. The set relief pressure changes according to the operating air pressure applied to the relief valve. When the pressure control valve is a relief valve, the pressure control unit further includes an electropneumatic regulator that changes the operating air pressure applied to the relief valve. The control device maintains the pressure of the processing liquid at the connection position at the connection position by causing the electropneumatic regulator to change the operating air pressure according to the difference between the pressure of the processing liquid detected by the pressure sensor and the pressure setting value. To do.

  When the pressure control valve is an electric valve, an electropneumatic regulator is not necessary. The electric valve includes a valve body including an annular valve seat that surrounds an internal flow path through which a processing liquid flows, a valve body that is disposed in the internal flow path and is movable with respect to the valve seat, and three or more And an electric actuator that stops the valve body at a plurality of positions. The opening degree of the electric valve, that is, the position of the valve body with respect to the valve seat is changed by the electric actuator. The control device causes the electric actuator to change the opening of the electric valve according to the difference between the pressure of the processing liquid detected by the pressure sensor and the pressure setting value, thereby changing the pressure of the processing liquid at the connection position to the pressure setting value. To maintain.

  The invention according to claim 2 is connected to the circulation pipe at a second nozzle that discharges the processing liquid supplied from the tank and a second connection position between the connection position and the interposition position. The second supply pipe for guiding the processing liquid from the circulation pipe to the second nozzle and the second supply pipe are provided, and the supply of the processing liquid from the second supply pipe to the second nozzle is performed. The apparatus further comprises a second discharge valve that switches between a discharge execution state to be executed and a discharge stop state in which the supply of the processing liquid from the second supply pipe to the second nozzle is stopped. It is a substrate processing apparatus of description.

  According to this configuration, the processing liquid flowing through the circulation pipe is supplied to the nozzle via the supply pipe, and is supplied to the second nozzle via the second supply pipe. The flow rate of the processing liquid flowing through the circulation pipe when both the nozzle and the second nozzle are discharging the processing liquid is larger than when only one of the nozzle and the second nozzle is discharging the processing liquid. In this configuration, since the maximum value (maximum circulation flow rate) of the processing liquid flowing through the circulation pipe during the processing period increases, if the pressure setting value is constant, the processing liquid flow between the processing period and the standby period is increased. The difference in flow rate widens. Therefore, by reducing the pressure setting value to the standby setting value in the standby period, the difference in flow rate between the two periods can be effectively reduced.

  The second nozzle may discharge the processing liquid supplied from the tank toward the substrate held by the substrate holding means, and the processing liquid supplied from the tank is the substrate holding means. You may discharge toward the board | substrate currently hold | maintained horizontally by a different 2nd board | substrate holding means. That is, the processing liquid discharged from the nozzle and the second nozzle may be supplied to the same substrate or may be supplied to different substrates.

  According to a third aspect of the present invention, a plurality of the substrate holding means are provided, a plurality of the nozzles are provided for each of the substrate holding means, and the circulation pipe is provided from the tank by the liquid feeding device. Including an upstream pipe for guiding the sent processing liquid and a plurality of individual pipes branched from the upstream pipe, and a plurality of the supply pipes are provided for each individual pipe, and extend from the individual pipe to the nozzle. A plurality of the discharge valves are provided for each of the supply pipes, a plurality of the pressure sensors are provided for each of the individual pipes, and a plurality of the pressure control valves are provided for each of the individual pipes, The individual pipe and the supply pipe are interposed in the individual pipe at the insertion position downstream of the connection position where the individual pipes and the supply pipe are connected to each other, and the control device is configured to provide at least one of the processing periods. The pressure setting value in at least one of the plurality of individual pipes is set to the processing setting value, and the pressure setting value in at least one of the plurality of individual pipes is set to at least a part of the standby period. The flow rate of the processing liquid flowing through the individual pipe during the standby period is set to be close to or close to the flow rate of the processing liquid flowing through the individual pipe during the processing period by setting the set value for standby. 2. The substrate processing apparatus according to 2.

According to this configuration, the flow rate of the processing liquid flowing in the individual pipe during the standby period can be made to match or approach the flow rate of the processing liquid flowing through the individual pipe during the processing period. As a result, the temperature of the processing liquid flowing in the individual pipe during the standby period can be made substantially the same as the temperature of the processing liquid flowing in the individual pipe during the processing period.
The length of the flow path through which the processing liquid passes from the tank to the nozzle is usually different for each nozzle. This means that the pressure loss is different for each flow path. In this case, even if the processing liquid is sent to the plurality of flow paths at the same supply pressure, the flow rate of the processing liquid differs for each flow path. In order to reduce the difference in flow rate between a plurality of flow paths, it is necessary to set the supply pressure of the processing liquid for each flow path. However, this means that the setting of the supply pressure is complicated.

  If a certain amount of flow rate difference is allowed between a plurality of individual pipes, the control device converts the pressure setting values in all the individual pipes to the processing setting values in at least a part of the processing period. It may be set. Similarly, if a certain amount of flow rate difference is allowed between a plurality of individual pipes, the control device uses the pressure setting values in all the individual pipes for the standby during at least a part of the standby period. It may be set to a set value. In these cases, setting of the pressure set value can be simplified.

  Alternatively, if it is desired to reduce the difference in flow rate among a plurality of individual pipes, the control device converts the pressure setting values in the plurality of individual pipes to a plurality of processing setting values determined for the individual pipes. It may be set. Similarly, if it is desired to reduce a difference in flow rate between a plurality of individual pipes, the control device sets the pressure setting values in the plurality of individual pipes to a plurality of standby setting values determined for the individual pipes. May be set.

  According to a fourth aspect of the present invention, the substrate processing apparatus includes a carrier mounting table on which a carrier containing the unprocessed substrate is placed, and a carrier detection sensor that detects whether the carrier is on the carrier mounting table. And when the carrier containing the unprocessed substrate is mounted on the carrier mounting table, the control device converts the pressure setting value from the standby setting value. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is changed to a set value for use.

  According to this configuration, the carrier containing the unprocessed substrate is placed on the carrier mounting table of the load port. As a result, an unprocessed substrate is placed in the substrate processing apparatus. The control device increases the pressure setting value from the standby setting value to the processing setting value at the same time or after confirming that the carrier has been placed on the carrier mounting table. Thereby, the primary side pressure of the pressure control valve is increased to a pressure suitable for discharging the processing liquid.

According to a fifth aspect of the present invention, the control device causes another unprocessed substrate to be transferred from the completion of processing of all the substrates in the substrate processing apparatus until a predetermined waiting time elapses. 5. The substrate processing apparatus according to claim 1, wherein the pressure setting value is changed from the processing setting value to the standby setting value if the pressure setting value is not loaded into the substrate processing apparatus. 6.
According to this configuration, the control apparatus monitors whether another unprocessed substrate has been carried into the substrate processing apparatus after all the substrates in the substrate processing apparatus have been processed. If another unprocessed substrate is not loaded before the predetermined standby time elapses, the control device changes the pressure setting value from the processing setting value to the standby setting value. Therefore, even if another unprocessed substrate is loaded immediately after all the substrates have been processed, the pressure set value does not need to be changed frequently.

  According to a sixth aspect of the present invention, the control device includes a communication device that communicates with an external device other than the substrate processing apparatus, and notice information for notifying that the unprocessed substrate is carried into the substrate processing apparatus. The substrate processing apparatus according to claim 1, wherein the pressure setting value is changed from the standby setting value to the processing setting value after being input from the external device to the communication device. It is.

  According to this configuration, an external device other than the substrate processing apparatus such as a host computer is connected to the communication device of the control device. When the notice information for notifying that an unprocessed substrate is carried into the substrate processing apparatus is input from the external device to the communication device by wired communication or wireless communication, the control device sets the pressure at the same time or after that. Increase the value from the set value for standby to the set value for processing. Thereby, the primary side pressure of the pressure control valve is increased to a pressure suitable for discharging the processing liquid.

The invention according to claim 7 is the substrate processing apparatus according to any one of claims 1 to 6, further comprising a flow meter for detecting a flow rate of the processing liquid flowing through the circulation pipe.
According to this configuration, the flow rate of the processing liquid flowing through the circulation pipe is detected by the flow meter during the processing period and the standby period. Thereby, it is possible to monitor whether or not the flow rate of the processing liquid is stable, and it is possible to monitor whether or not the temperature of the processing liquid is stable.

The invention according to claim 8 is the substrate processing apparatus according to claim 1, further comprising a temperature sensor that detects the temperature of the processing liquid flowing through the circulation pipe.
According to this configuration, the temperature of the processing liquid flowing through the circulation pipe is detected by the temperature sensor during the processing period and the standby period. Thereby, it is possible to monitor whether or not the temperature of the processing liquid is stable.

  According to the ninth aspect of the invention, the step of storing the processing liquid in the tank, the step of holding the substrate horizontally by the substrate holding means, and the processing liquid supplied from the tank are held in the substrate holding means. A step of discharging the nozzle toward the substrate, a step of circulating the processing liquid in the tank through the circulation pipe, a step of causing the liquid feeding device to send the processing liquid in the tank to the circulation pipe, and the liquid feeding device. A step of changing the temperature of the processing liquid sent to the circulation pipe to a temperature controller that performs at least one of heating and cooling, a step of guiding a processing liquid from the circulation pipe to the nozzle in a supply pipe, The discharge valve interposed in the supply pipe is connected to a discharge execution state in which the supply of the processing liquid from the supply pipe to the nozzle is performed, and the discharge in which the supply of the processing liquid from the supply pipe to the nozzle is stopped. A step of switching between a stopped state, a step of detecting the pressure of the processing liquid at a connection position where the circulation pipe and the supply pipe are connected to each other with a pressure sensor, and the intervening position downstream of the connection position By changing the pressure of the processing liquid in the circulation pipe according to the detection value of the pressure sensor, the pressure of the processing liquid at the connection position is set to the pressure set value by the pressure control valve interposed in the circulation pipe. A step of maintaining, a step of setting the pressure setting value to a processing set value in at least a part of a processing period in which an unprocessed substrate is in the substrate processing apparatus, and the unprocessed substrate is not in the substrate processing apparatus. By setting the pressure set value to a set value for standby smaller than the set value for processing during at least a part of the standby period, the flow rate of the processing liquid flowing through the circulation pipe during the standby period is set. And a step of processing solution flow in the cell or close match of flowing through the circulation pipe during serial processing period, the substrate processing method. According to this configuration, an effect similar to the effect described in claim 1 can be obtained.

It is the schematic diagram which looked at the substrate processing apparatus which concerns on one Embodiment of this invention from the top. It is the schematic diagram which looked at the inside of the processing unit with which the substrate processing apparatus was equipped horizontally. It is a block diagram which shows the electric constitution of a substrate processing apparatus. It is process drawing for demonstrating an example of the process of the board | substrate performed with a substrate processing apparatus. It is a schematic diagram which shows the chemical | medical solution supply system of a substrate processing apparatus. It is process drawing for demonstrating an example of the change procedure of the pressure setting value showing the setting value of the pressure of the process liquid in the connection position where the circulation piping and the supply piping were mutually connected. It is a time chart which shows an example of the time change of the state of three discharge valves corresponding to the same tower, the time change of the flow volume of the process liquid which flows through individual piping, and the time change of a pressure setting value. It is a graph which shows the outline of the temperature of the chemical | medical solution in each position in circulation piping.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of a substrate processing apparatus 1 according to an embodiment of the present invention as viewed from above.
The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a plurality of load ports LP such as FOUP (Front-Opening Unified Pod) that hold a carrier C, and a substrate W transported from the plurality of load ports LP with a processing fluid such as a processing liquid or a processing gas. And a plurality of processing units 2 for processing. The load port LP includes a carrier mounting table LPa on which the carrier C is placed and a carrier detection sensor LPb that detects whether the carrier C is on the carrier mounting table LPa.

  The substrate processing apparatus 1 further includes a transfer robot that transfers the substrate W between the load port LP and the processing unit 2. The transfer robot includes an indexer robot IR and a center robot CR. The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the processing unit 2. The indexer robot IR includes a hand H1 that supports the substrate W. Similarly, the center robot CR includes a hand H2 that supports the substrate W.

  The substrate processing apparatus 1 includes a plurality (for example, four) of fluid boxes 4 that accommodate fluid devices such as discharge valves 23 described later. The processing unit 2 and the fluid box 4 are disposed in the outer wall 1 a of the substrate processing apparatus 1 and are covered with the outer wall 1 a of the substrate processing apparatus 1. A cabinet 5 that houses a tank 40 and the like to be described later is disposed outside the outer wall 1 a of the substrate processing apparatus 1. The cabinet 5 may be arrange | positioned at the side of the substrate processing apparatus 1, and may be arrange | positioned under the clean room (basement) in which the substrate processing apparatus 1 is installed.

  The plurality of processing units 2 form a plurality of (for example, four) towers arranged so as to surround the center robot CR in plan view. Each tower includes a plurality of (for example, three) processing units 2 stacked one above the other. Each of the four fluid boxes 4 corresponds to four towers. The chemical solution in the cabinet 5 is supplied to all the processing units 2 included in the tower corresponding to the fluid box 4 via any fluid box 4.

  The carrier C in which the unprocessed substrate W is accommodated is placed on the load port LP by the carrier transport robot R1 installed in a manufacturing factory that manufactures semiconductor devices and the like. Thereafter, the substrate W in the carrier C is transferred to one of the processing units 2 by the indexer robot IR and the center robot CR, and is processed by the processing unit 2. The processed substrate W processed by the processing unit 2 is transferred to the same carrier C on the load port LP by the indexer robot IR and the center robot CR. The carrier C in which the processed substrate W is accommodated is transported to an apparatus that performs the next processing by the carrier transport robot R1.

FIG. 2 is a schematic view of the inside of the processing unit 2 provided in the substrate processing apparatus 1 as viewed horizontally.
The processing unit 2 includes a box-shaped chamber 6 having an internal space, a spin chuck 10 that rotates around a vertical rotation axis A1 that passes through a central portion of the substrate W while holding the substrate W horizontally in the chamber 6, and a substrate. A cylindrical cup 14 that receives the processing liquid discharged from W is included.

  The chamber 6 has a box-shaped partition wall 8 provided with a loading / unloading port through which the substrate W passes, a shutter 9 for opening / closing the loading / unloading port, and a downflow of clean air, which is air filtered by a filter, in the chamber 6. FFU7 (fan filter unit) to be formed. The center robot CR carries the substrate W into the chamber 6 through the loading / unloading port, and unloads the substrate W from the chamber 6 through the loading / unloading port.

  The spin chuck 10 includes a disc-shaped spin base 12 held in a horizontal posture, a plurality of chuck pins 11 that hold the substrate W in a horizontal posture above the spin base 12, the chuck pins 11, and the spin base 12. , And a spin motor 13 that rotates the substrate W around the rotation axis A1. The spin chuck 10 is not limited to a clamping chuck in which a plurality of chuck pins 11 are brought into contact with the outer peripheral surface of the substrate W, and the back surface (lower surface) of the substrate W, which is a non-device forming surface, is adsorbed to the upper surface of the spin base 12. Thus, a vacuum chuck that holds the substrate W horizontally may be used.

  The cup 14 has a cylindrical inclined portion 14a extending obliquely upward toward the rotation axis A1, a cylindrical guide portion 14b extending downward from a lower end portion (outer end portion) of the inclined portion 14a, and an annular shape opened upward. And a liquid receiving portion 14c that forms a groove. The inclined portion 14 a includes an annular upper end having a larger inner diameter than the substrate W and the spin base 12. The upper end of the inclined portion 14 a corresponds to the upper end of the cup 14. The upper end of the cup 14 surrounds the substrate W and the spin base 12 in plan view.

  In the processing unit 2, the upper end of the cup 14 is positioned above the holding position where the spin chuck 10 holds the substrate W (the position shown in FIG. 2), and the upper end of the cup 14 is positioned below the holding position. A cup lifting / lowering unit 15 that vertically moves the cup 14 up and down. When the processing liquid is supplied to the substrate W, the cup 14 is disposed at the upper position. The processing liquid scattered outward from the substrate W is received by the inclined portion 14a and then collected in the liquid receiving portion 14c by the guide portion 14b.

  The processing unit 2 includes a rinsing liquid nozzle 16 that discharges the rinsing liquid downward toward the upper surface of the substrate W held by the spin chuck 10. The rinse liquid nozzle 16 is connected to a rinse liquid pipe 17 in which a rinse liquid valve 18 is interposed. The processing unit 2 horizontally moves the rinsing liquid nozzle 16 between a processing position where the rinsing liquid discharged from the rinsing liquid nozzle 16 is supplied to the substrate W and a retreat position where the rinsing liquid nozzle 16 is separated from the substrate W in plan view. There may be provided a nozzle moving unit to be moved.

  When the rinse liquid valve 18 is opened, the rinse liquid is supplied from the rinse liquid pipe 17 to the rinse liquid nozzle 16 and discharged from the rinse liquid nozzle 16. The rinse liquid is, for example, pure water (deionized water). The rinse liquid is not limited to pure water, but may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).

  The processing unit 2 includes a chemical liquid nozzle 21 that discharges the chemical liquid downward toward the upper surface of the substrate W held by the spin chuck 10. The chemical nozzle 21 is connected to a supply pipe 22 in which a discharge valve 23, a flow meter 24, and a flow rate adjustment valve 25 are interposed. Supply and stop of supply of the chemical liquid to the chemical nozzle 21 are switched by the discharge valve 23. The flow rate of the chemical solution supplied to the chemical solution nozzle 21 is detected by the flow meter 24. This flow rate is changed by the flow rate adjusting valve 25.

  When the discharge valve 23 is opened, the chemical liquid is supplied from the supply pipe 22 to the chemical liquid nozzle 21 at a flow rate corresponding to the opening degree of the flow rate adjusting valve 25 and is discharged from the chemical liquid nozzle 21. The chemical liquid supplied to the chemical liquid nozzle 21 is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, aqueous ammonia, hydrogen peroxide, organic acid (for example, citric acid, oxalic acid, etc.), organic alkali ( For example, a liquid containing at least one of TMAH (tetramethylammonium hydroxide, etc.), a surfactant, and a corrosion inhibitor. Other liquids may be supplied to the chemical nozzle 21.

  The discharge valve 23 is formed between a discharge execution state in which the supply of the chemical liquid from the supply pipe 22 to the chemical liquid nozzle 21 is executed and a discharge stop state in which the supply of the chemical liquid from the supply pipe 22 to the chemical liquid nozzle 21 is stopped. Switch. The discharge stop state may be a state in which the valve body is separated from the valve seat. Although not shown, the discharge valve 23 includes a valve body including an annular valve seat surrounding the internal flow path through which the chemical solution flows, and a valve body disposed in the internal flow path and movable with respect to the valve seat. . The discharge valve 23 may be an air operated valve whose opening degree is changed by air pressure, or may be an electric valve whose opening degree is changed by electric power.

  The processing unit 2 moves the chemical liquid nozzle 21 horizontally between a processing position where the chemical liquid discharged from the chemical liquid nozzle 21 is supplied to the upper surface of the substrate W and a retreat position where the chemical liquid nozzle 21 is separated from the substrate W in plan view. The nozzle moving unit 26 is included. The nozzle moving unit 26 is, for example, a swiveling unit that horizontally moves the chemical nozzle 21 around a swing axis A2 that extends vertically around the cup 14.

FIG. 3 is a block diagram showing an electrical configuration of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a control device 3 that controls the substrate processing apparatus 1. The control device 3 includes a computer main body 30 and a peripheral device 33 connected to the computer main body 30. The computer main body 30 includes a CPU 31 (central processing unit) that executes various instructions and a main storage device 32 that stores information. The peripheral device 33 includes an auxiliary storage device 34 that stores information such as the program P, a reading device 35 that reads information from the removable medium M, and a communication device 36 that communicates with devices other than the control device 3 such as the host computer HC. Including.

  The control device 3 is connected to an input device 37 and a display device 38. The input device 37 is operated when an operator such as a user or a maintenance person inputs information to the substrate processing apparatus 1. The information is displayed on the screen of the display device 38. The input device 37 may be any of a keyboard, a pointing device, and a touch panel, or may be a device other than these. A touch panel display that doubles as the input device 37 and the display device 38 may be provided in the substrate processing apparatus 1.

  The CPU 31 executes the program P stored in the auxiliary storage device 34. The program P in the auxiliary storage device 34 may be installed in the control device 3 in advance, or may be sent from the removable medium M to the auxiliary storage device 34 through the reading device 35, It may be sent from an external device such as the host computer HC to the auxiliary storage device 34 through the communication device 36.

  The auxiliary storage device 34 and the removable medium M are nonvolatile memories that retain storage even when power is not supplied. The auxiliary storage device 34 is a magnetic storage device such as a hard disk drive, for example. The removable medium M is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. The removable medium M is an example of a computer-readable recording medium on which the program P is recorded.

  The control device 3 controls the substrate processing apparatus 1 so that the substrate W is processed according to the recipe specified by the host computer HC. The auxiliary storage device 34 stores a plurality of recipes. The recipe is information that defines the processing content, processing conditions, and processing procedure of the substrate W. The plurality of recipes differ from each other in at least one of the processing content, processing conditions, and processing procedure of the substrate W. The flow rate and temperature of the chemical solution supplied to the substrate W are included in the recipe. The auxiliary storage device 34 stores a plurality of sets of processing setting values and standby setting values respectively corresponding to the flow rates of a plurality of chemical solutions. The processing setting value and the standby setting value will be described later.

FIG. 4 is a process diagram for explaining an example of the processing of the substrate W performed by the substrate processing apparatus 1. In the following, reference is made to FIGS. The following steps are executed by the control device 3 controlling the substrate processing apparatus 1. In other words, the control device 3 is programmed to execute the following steps.
When the substrate W is processed by the substrate processing apparatus 1, a carry-in process for carrying the substrate W into the chamber 6 is performed (step S1 in FIG. 4).

  Specifically, the center robot CR (see FIG. 1) supports the substrate W with the hand H2 while the chemical nozzle 21 is retracted from above the substrate W and the cup 14 is positioned at the lower position. Then, the hand H2 enters the chamber 6. Thereafter, the center robot CR places the substrate W on the hand H2 on the spin chuck 10 with the surface of the substrate W facing upward. The spin motor 13 starts the rotation of the substrate W after the substrate W is gripped by the chuck pins 11. After placing the substrate W on the spin chuck 10, the center robot CR retracts the hand H <b> 2 from the inside of the chamber 6.

Next, a chemical solution supplying step for supplying the chemical solution to the substrate W is performed (step S2 in FIG. 4).
Specifically, the nozzle moving unit 26 moves the chemical liquid nozzle 21 to the processing position, and the cup lifting / lowering unit 15 raises the cup 14 to the upper position. Thereafter, the discharge valve 23 is opened, and the chemical nozzle 21 starts to discharge the chemical. When the chemical liquid nozzle 21 is discharging the chemical liquid, the nozzle moving unit 26 has a central processing position where the chemical liquid discharged from the chemical liquid nozzle 21 is deposited on the center of the upper surface of the substrate W, and the chemical liquid discharged from the chemical liquid nozzle 21. May move the chemical nozzle 21 between the outer peripheral processing position where the liquid is deposited on the outer peripheral portion of the upper surface of the substrate W, or the chemical nozzle 21 so that the chemical liquid is positioned at the center of the upper surface of the substrate W. May be stationary.

  The chemical liquid discharged from the chemical liquid nozzle 21 lands on the upper surface of the substrate W, and then flows outward along the upper surface of the rotating substrate W. Thereby, a liquid film of a chemical solution covering the entire upper surface of the substrate W is formed, and the chemical solution is supplied to the entire upper surface of the substrate W. In particular, when the nozzle moving unit 26 moves the chemical nozzle 21 between the central processing position and the outer peripheral processing position, the entire upper surface of the substrate W is scanned at the chemical liquid landing position. It is supplied uniformly throughout. Thereby, the upper surface of the substrate W is processed uniformly. When a predetermined time elapses after the discharge valve 23 is opened, the discharge valve 23 is closed and the discharge of the chemical liquid from the chemical liquid nozzle 21 is stopped. Thereafter, the nozzle moving unit 26 moves the chemical nozzle 21 to the retracted position.

Next, a rinsing liquid supply step for supplying pure water, which is an example of a rinsing liquid, to the upper surface of the substrate W is performed (step S3 in FIG. 4).
Specifically, the rinse liquid valve 18 is opened, and the rinse liquid nozzle 16 starts discharging pure water. The pure water that has landed on the upper surface of the substrate W flows outward along the upper surface of the rotating substrate W. The chemical liquid on the substrate W is washed away by pure water discharged from the rinse liquid nozzle 16. As a result, a pure water liquid film covering the entire upper surface of the substrate W is formed. When a predetermined time elapses after the rinsing liquid valve 18 is opened, the rinsing liquid valve 18 is closed and the discharge of pure water is stopped.

Next, a drying process for drying the substrate W by high-speed rotation of the substrate W is performed (step S4 in FIG. 4).
Specifically, the spin motor 13 accelerates the substrate W in the rotation direction, and rotates the substrate W at a high rotation speed (for example, several thousand rpm) larger than the rotation speed of the substrate W in the chemical liquid supply process and the rinse liquid supply process. Let Thereby, the liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after high-speed rotation of the substrate W is started, the spin motor 13 stops rotating. Thereby, the rotation of the substrate W is stopped.

Next, an unloading process for unloading the substrate W from the chamber 6 is performed (step S5 in FIG. 4).
Specifically, the cup raising / lowering unit 15 lowers the cup 14 to the lower position. Thereafter, the center robot CR (see FIG. 1) causes the hand H2 to enter the chamber 6. The center robot CR supports the substrate W on the spin chuck 10 with the hand H2 after the plurality of chuck pins 11 release the grip of the substrate W. Thereafter, the center robot CR retracts the hand H2 from the inside of the chamber 6 while supporting the substrate W with the hand H2. Thereby, the processed substrate W is unloaded from the chamber 6.

FIG. 5 is a schematic diagram showing a chemical solution supply system of the substrate processing apparatus 1. In FIG. 5, the fluid box 4 is indicated by a one-dot chain line, and the chemical liquid cabinet 5 is indicated by a two-dot chain line. The members arranged in the region surrounded by the one-dot chain line are arranged in the fluid box 4, and the members arranged in the region surrounded by the two-dot chain line are arranged in the chemical solution cabinet 5.
The substrate processing apparatus 1 includes a tank 40 that stores a chemical solution supplied to the substrate W, and a circulation pipe 41 that circulates the chemical solution in the tank 40. The circulation pipe 41 includes an upstream pipe 42 extending downstream from the tank 40, a plurality of individual pipes 43 branched from the upstream pipe 42, and a downstream pipe 44 extending downstream from each individual pipe 43 to the tank 40.

  The upstream end of the upstream pipe 42 is connected to the tank 40. The downstream end of the downstream pipe 44 is connected to the tank 40. The upstream end of the upstream pipe 42 corresponds to the upstream end of the circulation pipe 41, and the downstream end of the downstream pipe 44 corresponds to the downstream end of the circulation pipe 41. Each individual pipe 43 extends from the downstream end of the upstream pipe 42 to the upstream end of the downstream pipe 44. Instead of the downstream end of the downstream pipe 44, the downstream end of the individual pipe 43 may be connected to the tank 40. That is, the downstream pipe 44 may be omitted.

  Each of the plurality of individual pipes 43 corresponds to a plurality of towers. FIG. 5 shows the entirety of one individual pipe 43 and a part of the remaining three individual pipes 43. FIG. 5 shows three processing units 2 included in the same tower. Three supply pipes 22 corresponding to three processing units 2 included in the same tower are connected to the same individual pipe 43. The three connection positions P2 at which the three supply pipes 22 and the individual pipes 43 are connected to each other are arranged in the direction in which the chemical solution flows.

  The substrate processing apparatus 1 includes a pump 45 that sends the chemical solution in the tank 40 to the circulation pipe 41, a filter 46 that removes foreign substances from the chemical solution that flows through the circulation pipe 41, and a temperature controller 47 that adjusts the temperature of the chemical solution in the tank 40. Including. The substrate processing apparatus 1 further includes a flow meter 48 that detects the flow rate of the chemical liquid flowing through the circulation pipe 41 and a temperature sensor 49 that detects the temperature of the chemical liquid flowing through the circulation pipe 41. The pump 45, the filter 46, and the temperature controller 47 are interposed in the upstream pipe 42. The flow meter 48 and the temperature sensor 49 are interposed in the individual pipe 43.

  The chemical solution in the tank 40 is sent to the upstream pipe 42 by the pump 45 and flows from the upstream pipe 42 to the plurality of individual pipes 43. The chemical solution in the individual pipe 43 flows into the downstream pipe 44 and returns from the downstream pipe 44 to the tank 40. During this time, foreign substances contained in the chemical solution are removed by the filter 46. In addition, the chemical solution in the tank 40 is heated or cooled by the temperature controller 47 so as to reach the temperature specified by the recipe, and is sent to the upstream pipe 42. Thereby, the chemical | medical solution in the tank 40 is maintained at the fixed temperature higher or lower than the temperature (for example, 20-30 degreeC) of the atmosphere in the process unit 2 at least in the downstream position P4 immediately after the temperature regulator 47. FIG. While being sent to the upstream pipe 42 (circulation pipe 41).

  The temperature controller 47 may be a heater that heats the chemical liquid that flows through the circulation pipe 41, may be a cooler that cools the chemical liquid that flows through the circulation pipe 41, and heats and cools the chemical liquid that flows through the circulation pipe 41. It may be a cooling / heating device. FIG. 5 shows an example in which the temperature controller 47 is a heater. The temperature controller 47 may be provided in the circulation pipe 41 or may be provided in the tank 40.

  The pump 45 continues to send the chemical solution in the tank 40 to the circulation pipe 41 at a constant pressure regardless of whether or not the substrate W is in the substrate processing apparatus 1. Instead of the pump 45, the substrate processing apparatus 1 may include a pressurizing device that pushes the chemical solution in the tank 40 to the circulation pipe 41 by increasing the atmospheric pressure in the tank 40. The pump 45 and the pressurizing device are both examples of a liquid feeding device that sends the chemical solution in the tank 40 to the circulation pipe 41.

  The substrate processing apparatus 1 includes a pressure control unit 51 that controls the pressure of the processing liquid at a plurality of connection positions P2 where the individual pipes 43 and the plurality of supply pipes 22 are connected to each other. The pressure control unit 51 includes a pressure sensor 52 that detects the pressure of the processing liquid in the individual pipe 43, a relief valve 53 that is interposed in the individual pipe 43 at an interposition position P3 downstream of the plurality of connection positions P2, and a relief. And an electropneumatic regulator 54 that changes the set relief pressure of the relief valve 53 by changing the operating air pressure applied to the valve 53.

  The pressure sensor 52 detects the pressure of the processing liquid in the individual pipe 43 at the detection position P1 on the individual pipe 43. The pressure of the processing liquid at the connection position P2 where the individual pipe 43 and the supply pipe 22 are connected to each other is substantially equal to the pressure of the processing liquid at the detection position P1. Accordingly, detecting the pressure of the processing liquid in the individual pipe 43 by the pressure sensor 52 at the detection position P1 can be regarded as substantially equivalent to detecting the pressure of the processing liquid at the connection position P2. The detection position P1 is a position upstream of the plurality of connection positions P2. If it is upstream of the relief valve 53, the detection position P1 may be downstream of the plurality of connection positions P2.

  The relief valve 53 is a valve that lowers the primary side pressure to less than the set relief pressure when the primary side pressure, that is, the pressure upstream of the relief valve 53 rises to the set relief pressure. The set relief pressure changes according to the operating air pressure applied to the relief valve 53. The electropneumatic regulator 54 increases or decreases the operating air pressure applied to the relief valve 53. When the operating air pressure increases, the set relief pressure also increases. When the operating air pressure decreases, the set relief pressure also decreases.

  The pump 45 sends the chemical solution in the tank 40 to the circulation pipe 41 at a constant pressure. If the pulsation of the pump 45 can be ignored, when all the discharge valves 23 corresponding to the same tower are closed and the set relief pressure of the relief valve 53 is the same, the pressure of the processing liquid flowing in the individual pipe 43 is individually The same is true at any point in the pipe 43. In this way, the control device 3 monitors the pressure of the processing liquid in the individual pipe 43 based on the detection value of the pressure sensor 52.

  The control device 3 maintains the pressure of the processing liquid at the connection position P2 at the pressure set value by controlling the pressure control unit 51. Specifically, when the pressure of the processing liquid detected by the pressure sensor 52, that is, the actual pressure of the processing liquid fluctuates, the control device 3 causes the actual processing liquid pressure to match or approach the pressure setting value. Next, the electropneumatic regulator 54 is caused to change the operating air pressure. Thereby, the detection value of the pressure sensor 52 is fed back, and the actual pressure of the processing liquid is maintained at or near the pressure set value.

FIG. 6 is a process diagram for explaining an example of a procedure for changing the pressure set value representing the set value of the pressure of the processing liquid at the connection position P2 where the circulation pipe 41 and the supply pipe 22 are connected to each other. The following steps are executed by the control device 3 controlling the substrate processing apparatus 1. In other words, the control device 3 is programmed to execute the following steps.
When a recipe to be applied to the substrate W is first set or when a recipe to be applied to the substrate W is changed, the unprocessed substrate W is supplied to the substrate W before being transferred to the substrate processing apparatus 1. The flow rate of the chemical liquid to be performed is input to the control device 3 (step S11 in FIG. 6). The flow rate of the chemical solution may be input to the communication device 36 of the control device 3 from an external device such as the host computer HC, or may be input to the input device 37 of the control device 3 by the user.

  When the flow rate of the chemical solution is input to the communication device 36 or the input device 37 of the control device 3, the control device 3 determines a plurality of sets of processing setting values and standby setting values stored in the auxiliary storage device 34. Then, the processing setting value and standby setting value determination corresponding to the input chemical flow rate are selected. Thereafter, the control device 3 is a pressure that represents the set value of the pressure of the processing liquid at the connection position P2 where the circulation pipe 41 and the supply pipe 22 are connected to each other until the unprocessed substrate W is transferred to the substrate processing apparatus 1. The set value is set to the standby set value (step S12 in FIG. 6).

  The control device 3 detects whether or not the carrier C containing the unprocessed substrate W is in any one of the load ports LP in a state where the pressure setting values of all the towers are set to the standby setting values. Monitoring is performed based on the detection value of the sensor LPb (step S13 in FIG. 6). When the carrier transport robot R1 (see FIG. 1) places the carrier C containing the unprocessed substrate W on any of the load ports LP, the control device 3 causes the carrier C containing the unprocessed substrate W to be loaded into the load port. It is determined that it is in LP (Yes in step S13 in FIG. 6). Thereafter, the control device 3 increases the pressure setting values of all the towers from the standby setting values to the processing setting values (step S14 in FIG. 6).

  After the carrier C containing the unprocessed substrate W is placed on one of the load ports LP, as described above, the substrate W in the carrier C is set to one of the processing units by the indexer robot IR and the center robot CR. 2 and processed by the processing unit 2 (step S15 in FIG. 6). The substrate W processed by the processing unit 2 is transferred to the same carrier C on the load port LP by the indexer robot IR and the center robot CR (step S15 in FIG. 6). When all the substrates W in the carrier C are processed and accommodated in the carrier C, the carrier C on the load port LP is transferred to the next apparatus by the carrier transfer robot R1.

  When processing of all the substrates W in the same carrier C is completed (Yes in step S16 in FIG. 6), the control device 3 has a new carrier C containing unprocessed substrates W in any load port LP. It confirms that it does not (step S17 of FIG. 6). When a new carrier C is transported to any one of the load ports LP from the completion of the processing of all the substrates W in the carrier C until a predetermined standby time elapses (in step S17 in FIG. 6). Yes), the control device 3 carries and processes the substrate W while maintaining the pressure setting values of all the towers at the processing setting values (return to step S15 in FIG. 6).

  On the other hand, a new carrier C containing unprocessed substrates W is placed in any load port LP until a predetermined waiting time elapses after the processing of all the substrates W in the carrier C is completed. If it is not carried in (Yes in step S18 in FIG. 6), the control device 3 decreases all the pressure setting values from the processing setting values to the standby setting values (step S19 in FIG. 6). Thereafter, the control device 3 monitors whether or not the carrier C containing the unprocessed substrate W has been transferred to any of the load ports LP (return to step S3 in FIG. 6).

  FIG. 7 is a time chart showing an example of a temporal change in the state of the three discharge valves 23 corresponding to the same tower, a temporal change in the flow rate of the processing liquid flowing through the individual pipe 43, and a temporal change in the pressure set value. It is. In FIG. 7, in order to distinguish the three discharge valves 23 corresponding to the same tower, the three discharge valves 23 are represented as a first discharge valve 23A, a second discharge valve 23B, and a third discharge valve 23C.

If the pulsation of the pump 45 can be ignored, the set relief pressure of the relief valve 53 is the same, and when all the discharge valves 23 are closed, the flow rate of the chemical liquid flowing through the individual pipes 43 changes with time. It is constant.
Even if the set relief pressure of the relief valve 53 is the same, when one of the discharge valves 23 is opened, the flow rate of the chemical liquid flowing through the individual pipe 43 increases. The flow rate of the chemical liquid flowing through the individual pipe 43 increases as the number of open discharge valves 23 increases. For example, as shown in FIG. 7, when the first discharge valve 23 </ b> A, the second discharge valve 23 </ b> B, and the third discharge valve 23 </ b> C are sequentially opened and then sequentially closed, the flow rate of the chemical solution flowing through the individual pipe 43 is stepwise. To increase, and then gradually decrease.

  When the pressure setting value is decreased from the processing setting value to the standby setting value, that is, when the set relief pressure of the relief valve 53 is decreased, the flow rate of the chemical solution flowing through the individual pipe 43 increases. At this time, the flow rate of the chemical liquid flowing through the individual pipe 43 is larger than when the pressure setting value is the processing setting value and all the discharge valves 23 corresponding to the same tower are closed. The set value for standby is set so that the flow rate of the chemical liquid flowing through the individual pipe 43 during the standby period matches or approaches the average flow rate or the maximum flow rate of the chemical liquid flowing through the individual pipe 43 during the processing period. Therefore, the difference between the flow rates in both periods decreases to zero or a value close thereto. When the pressure setting value is decreased to the standby setting value, the flow rate of the chemical liquid flowing through the individual pipe 43 is the processing setting value, and all the discharge valves 23 corresponding to the same tower are closed. It may be the same as when

  FIG. 8 is a graph for explaining the effect of the present embodiment. FIG. 8 is a graph showing an outline of the temperature of the chemical solution at each position in the circulation pipe 41. The horizontal axis of the graph indicates the position in the circulation pipe 41, more specifically, the distance from the temperature controller 47 to an arbitrary position in the circulation pipe 41. The vertical axis of the graph indicates the temperature of the chemical solution flowing through the circulation pipe 41. The solid line in FIG. 8 indicates the temperature of the chemical liquid during the treatment period, and the broken line indicates the temperature of the chemical liquid during the standby period.

  Regardless of whether the temperature controller 47 is a heater or a cooler, the temperature controller 47 heats or cools the chemical solution so that the chemical solution passing through the temperature controller 47 reaches a set temperature. Therefore, the temperature t1 at the downstream position P4 immediately after the temperature regulator 47 is constant regardless of the flow rate of the chemical liquid passing through the temperature regulator 47. The temperature of the processing liquid fluctuates (decreases or increases) under the influence of the atmosphere as the detection position becomes downstream. As described above, the degree of variation in the temperature of the processing liquid is affected by the flow rate of the processing liquid flowing through the circulation pipe 41.

  In the example of FIG. 8, the degree of temperature decrease (temperature t1 → temperature t3) in the standby period (state where the flow rate of chemical liquid is low) is the degree of temperature decrease (temperature t1 → temperature t3) during the treatment period (state where the flow rate of chemical liquid is high). The temperature t2) is greater. When the temperature of the chemical solution is greatly lowered, the chemical solution at a desired temperature cannot be supplied to the substrate when the chemical solution is returned from the standby period to the processing period. Therefore, in the present embodiment, the difference in flow rate between the processing period and the standby period is reduced by adjusting the set relief pressure of the relief valve 53 in the standby period. For example, the degree of decrease in the chemical temperature at the connection position P2) is suppressed.

  As described above, in the present embodiment, when there is an unprocessed substrate W, that is, a substrate W that has not been processed by the substrate processing apparatus 1, the control apparatus 3 includes the circulation pipe 41 and the supply pipe 22. A pressure setting value representing a setting value of the pressure of the chemical solution at the connection position P2 connected to each other is set as a processing setting value. When there is no unprocessed substrate W in the substrate processing apparatus 1, the control device 3 sets the pressure setting value to the standby setting value. The standby setting value is smaller than the processing setting value. Therefore, when there is no unprocessed substrate W in the substrate processing apparatus 1, the pressure loss at the pressure control valve 53 decreases, and the flow rate of the chemical flowing through the circulation pipe 41 increases.

  The set value for standby is set so that the flow rate of the chemical solution flowing through the circulation pipe 41 during the standby period matches or approaches the flow rate of the chemical solution flowing through the circulation pipe 41 during the treatment period. Therefore, the difference between the flow rates in both periods decreases to zero or a value close thereto. Therefore, even if the waiting period becomes longer, the temperature of the chemical solution in the tank 40 hardly changes. As a result, even after the long standby period is over, a chemical solution having a stable temperature can be supplied to the plurality of substrates W, and variations in quality among the plurality of substrates W can be reduced.

  In the present embodiment, a plurality of chemical liquid nozzles 21 are connected to the same individual pipe 43. When distinguishing the three chemical nozzles 21 connected to the same individual pipe 43, the three chemical nozzles 21 are referred to as a first chemical nozzle 21, a second chemical nozzle 21, and a third chemical nozzle 21. When the first chemical liquid nozzle 21, the second chemical liquid nozzle 21, and the third chemical liquid nozzle 21 are discharging the chemical liquid, the flow rates of the chemical liquid flowing through the individual pipe 43 are the first chemical liquid nozzle 21, the second chemical liquid nozzle 21, and Only two of the third chemical liquid nozzles 21 are larger than when the chemical liquid is being discharged.

  In the configuration in which a plurality of chemical liquid nozzles 21 are connected to the same individual pipe 43, the chemical liquid flowing through the individual pipe 43 during the processing period is compared with a configuration in which only one chemical liquid nozzle 21 is connected to the individual pipe 43. The maximum value of the flow rate (maximum circulating flow rate) increases. Therefore, if the pressure setting value is constant, the difference in the flow rate of the chemical solution between the processing period and the standby period is widened. Therefore, by reducing the pressure setting value to the standby setting value in the standby period, the difference in flow rate between the two periods can be effectively reduced.

  In the present embodiment, the chemical solution in the tank 40 is sent to the upstream pipe 42 by the pump 45 which is an example of a liquid feeding device, and is guided to the plurality of individual pipes 43 from the upstream pipe 42. In such a case, the difference in the flow rate of the chemical solution between the processing period and the standby period is likely to widen, but by reducing the pressure setting value to the standby setting value in the standby period, the difference in flow rate in both periods is reduced. It can be reduced effectively.

  In the present embodiment, the carrier C containing the unprocessed substrate W is placed on the carrier C carrier mounting table LPa of the load port LP. Thereby, the unprocessed substrate W is placed in the substrate processing apparatus 1. At the same time or after confirming that the carrier C is placed on the carrier C carrier mounting table LPa, the control device 3 increases the pressure setting value from the standby setting value to the processing setting value. Thereby, the primary pressure of the pressure control valve 53 is increased to a pressure suitable for the discharge of the chemical liquid.

  In the present embodiment, the control device 3 monitors whether another unprocessed substrate W has been carried into the substrate processing apparatus 1 after all the substrates W in the substrate processing apparatus 1 have been processed. Then, if another unprocessed substrate W is not loaded before the predetermined standby time elapses, the control device 3 changes the pressure setting value from the processing setting value to the standby setting value. Therefore, even if another unprocessed substrate W is loaded immediately after all the substrates W have been processed, the pressure set value need not be changed frequently.

Other Embodiments The present invention is not limited to the contents of the above-described embodiments, and various modifications can be made.
For example, the liquid stored in the tank 40 is not limited to the chemical liquid but may be other liquid such as a rinse liquid.

The pressure control valve 53 is not limited to the relief valve 53 but may be an electric valve such as an electric needle valve.
The number of supply pipes 22 connected to the same individual pipe 43 may be less than two, or four or more.
The number of the individual pipes 43 provided in the circulation pipe 41 may be less than 3, or 5 or more.

The control device 3 may change the pressure setting value from the standby setting value to the processing setting value, except that the carrier C containing the unprocessed substrate W is placed on the load port LP.
For example, if the advance notice information for notifying that the unprocessed substrate W is carried into the substrate processing apparatus 1 is input from the external device such as the host computer HC to the communication device 36 by wired communication or wireless communication, The control device 3 may increase the pressure setting value from the standby setting value to the processing setting value simultaneously with or after the advance notice information is input to the communication device 36. In this case, the pressure set value can be changed before the carrier C is placed on the load port LP.

When the processing of all the substrates W in the substrate processing apparatus 1 is completed, the pressure setting value may be changed from the processing setting value to the standby setting value without waiting for the standby time to elapse.
All the flow meters 48 may be omitted. Similarly, all the temperature sensors 49 may be omitted. Further, all the flow meters 48 and all the temperature sensors 49 may be omitted. Alternatively, at least one of the flow meter 48 and the temperature sensor 49 may be omitted from less than four individual pipes 43, and at least one of the flow meter 48 and the temperature sensor 49 may be provided only in the remaining individual pipes 43.

The substrate processing apparatus 1 is not limited to an apparatus that processes a disk-shaped substrate W, and may be an apparatus that processes a polygonal substrate W.
Two or more of all the aforementioned configurations may be combined.
In addition, various design changes can be made within the scope of matters described in the claims.

1: substrate processing apparatus 2: processing unit 3: control apparatus 10: spin chuck (substrate holding means)
21: Chemical nozzle (nozzle, second nozzle)
22: Supply pipe (second supply pipe)
23: Discharge valve (second discharge valve)
24: Flow meter 25: Flow rate adjusting valve 26: Nozzle moving unit 40: Tank 41: Circulating piping 42: Upstream piping 43: Individual piping 44: Downstream piping 45: Pump (liquid feeding device)
46: Filter 47: Temperature controller 48: Flowmeter 49: Temperature sensor 51: Pressure control unit 52: Pressure sensor 53: Relief valve 54: Electropneumatic regulator C: Carrier LP: Load port LPa: Carrier mounting table LPb: Carrier detection Sensor P1: Detection position P2: Connection position (second connection position)
P3: Intervening position W: Substrate

Claims (9)

A tank for storing the processing liquid;
Substrate holding means for holding the substrate horizontally;
A nozzle for discharging the processing liquid supplied from the tank toward the substrate held by the substrate holding means;
A circulation pipe for circulating the treatment liquid in the tank;
A liquid feeding device for sending the processing liquid in the tank to the circulation pipe;
A temperature controller that changes the temperature of the treatment liquid sent to the circulation pipe by the liquid feeding device by at least one of heating and cooling; and
A supply pipe for guiding the processing liquid from the circulation pipe to the nozzle;
A discharge execution state in which the supply of the processing liquid from the supply pipe to the nozzle is executed, and a discharge stop state in which the supply of the processing liquid from the supply pipe to the nozzle is stopped. And a discharge valve that switches between,
A pressure sensor for detecting the pressure of the processing liquid at a connection position where the circulation pipe and the supply pipe are connected to each other; and a pressure control valve interposed in the circulation pipe at an interposed position downstream of the connection position. A pressure control unit that maintains the pressure of the processing liquid at the connection position at a pressure set value by changing the pressure of the processing liquid in the circulation pipe to the pressure control valve according to a detection value of the pressure sensor; ,
In at least a part of a processing period in which an unprocessed substrate exists in the substrate processing apparatus, the pressure setting value is set to a processing set value, and in at least a part of a standby period in which the unprocessed substrate is not in the substrate processing apparatus. By setting the pressure setting value to a standby setting value that is smaller than the processing setting value, the flow rate of the processing liquid flowing through the circulation pipe during the standby period is set to flow through the circulation pipe during the processing period. A substrate processing apparatus comprising: a control device that matches or approaches the flow rate of the liquid. A second nozzle that discharges the processing liquid supplied from the tank;
A second supply pipe that is connected to the circulation pipe at a second connection position between the connection position and the intervention position, and that guides the processing liquid from the circulation pipe to the second nozzle;
A discharge execution state in which the processing liquid is supplied from the second supply pipe to the second nozzle, and the process from the second supply pipe to the second nozzle is interposed in the second supply pipe. The substrate processing apparatus according to claim 1, further comprising: a second discharge valve that switches between a discharge stop state in which supply of the liquid is stopped. A plurality of the substrate holding means are provided,
A plurality of the nozzles are provided for each of the substrate holding means,
The circulation pipe includes an upstream pipe for guiding the processing liquid sent from the tank by the liquid feeding device, and a plurality of individual pipes branched from the upstream pipe,
A plurality of the supply pipes are provided for each individual pipe, and extend from the individual pipe to the nozzle,
A plurality of the discharge valves are provided for each supply pipe,
A plurality of the pressure sensors are provided for each individual pipe,
A plurality of the pressure control valves are provided for the individual pipes, and the individual pipes and the supply pipes are interposed in the individual pipes at the intervening positions downstream of the connection positions,
The control device sets the pressure setting value in at least one of the plurality of individual pipes to the processing setting value in at least a part of the processing period, and in the at least part of the waiting period, By setting the pressure setting value in at least one of the individual pipes to the standby setting value, the flow rate of the processing liquid flowing through the individual pipe during the standby period is set to the processing liquid flowing through the individual pipe during the processing period. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus matches or approaches the flow rate of the substrate. The substrate processing apparatus further includes a load port including a carrier mounting table on which a carrier containing the unprocessed substrate is placed, and a carrier detection sensor that detects whether or not the carrier is on the carrier mounting table. ,
The control device changes the pressure setting value from the standby setting value to the processing setting value when the carrier containing the unprocessed substrate is mounted on the carrier mounting table. The substrate processing apparatus as described in any one of -3.   The control device, when a predetermined standby time elapses after the processing of all the substrates in the substrate processing apparatus is completed, if another unprocessed substrate is not carried into the substrate processing apparatus, The substrate processing apparatus according to claim 1, wherein the pressure setting value is changed from the processing setting value to the standby setting value.   The control device includes a communication device that communicates with an external device other than the substrate processing device, and notice information for notifying that the unprocessed substrate is carried into the substrate processing device is transmitted from the external device to the communication device. The substrate processing apparatus according to claim 1, wherein after the input, the pressure setting value is changed from the standby setting value to the processing setting value.   The substrate processing apparatus according to claim 1, further comprising a flow meter that detects a flow rate of the processing liquid flowing through the circulation pipe.   The substrate processing apparatus as described in any one of Claims 1-7 further equipped with the temperature sensor which detects the temperature of the process liquid which flows through the said circulation piping. Storing the processing liquid in a tank;
Holding the substrate horizontally by the substrate holding means;
Discharging the processing liquid supplied from the tank to the nozzle toward the substrate held by the substrate holding means;
Circulating the treatment liquid in the tank through a circulation pipe;
A step of causing the liquid feeding device to send the processing liquid in the tank to the circulation pipe;
Changing the temperature of the processing liquid sent to the circulation pipe by the liquid feeding device by a temperature controller that performs at least one of heating and cooling;
Guiding the processing liquid from the circulation pipe to the nozzle in a supply pipe;
The discharge valve interposed in the supply pipe is discharged in a discharge execution state in which the supply of the processing liquid from the supply pipe to the nozzle is executed, and the discharge in which the supply of the processing liquid from the supply pipe to the nozzle is stopped. A step of switching between the stopped state,
Detecting the pressure of the processing liquid at a connection position where the circulation pipe and the supply pipe are connected to each other with a pressure sensor;
By changing the pressure of the processing liquid in the circulation pipe in accordance with the detected value of the pressure sensor, the pressure control valve interposed in the circulation pipe at the intervention position downstream of the connection position Maintaining the pressure of the processing liquid at the pressure set value,
Setting the pressure setting value to a processing setting value in at least a part of a processing period in which an unprocessed substrate is in the substrate processing apparatus;
By setting the pressure set value to a set value for standby that is smaller than the set value for processing during at least a part of the standby period in which the unprocessed substrate is not in the substrate processing apparatus, the circulation is performed during the standby period. And a step of causing the flow rate of the processing liquid flowing through the piping to match or approach the flow rate of the processing liquid flowing through the circulation piping during the processing period.

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