TWI732976B - 形成矽化物的方法 - Google Patents

形成矽化物的方法 Download PDF

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TWI732976B
TWI732976B TW106142844A TW106142844A TWI732976B TW I732976 B TWI732976 B TW I732976B TW 106142844 A TW106142844 A TW 106142844A TW 106142844 A TW106142844 A TW 106142844A TW I732976 B TWI732976 B TW I732976B
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type silicon
highly doped
silicon layers
titanium silicide
substrate
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TW201828340A (zh
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華 仲
馬蒂亞斯 包爾
紹芳 諸
沙堤西 古波若
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美商應用材料股份有限公司
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Abstract

本案揭露內容大致上關於在基板上選擇性形成矽化鈦的方法。大致上與接觸件結構整合方案一併利用該等方法。一個實施例中，在基板上選擇性形成矽化鈦材料而作為源極/汲極區域上的界面層。可在約攝氏400度至約攝氏500度的範圍內的溫度形成矽化鈦層。

Description

形成矽化物的方法
本案揭露內容之實施例大致上關於矽化物的形成，諸如用在接觸件整合方案中的矽化物。
矽化鈦是半導體元件製造中用於矽化物接觸件的大有可為的材料。然而，矽化鈦的化學氣相沉積（CVD）在低於800°C的溫度不具選擇性。此外，習知的矽化鈦具有低於期望的正形度，造成矽化物形成期間矽的消耗。再者，習知矽化鈦形成製程經常與後沉積退火一併使用以形成低電阻率相的矽化物。上述變數經常耗時且與先進節點接觸件結構整合方案的熱預算不相容。
因此，需要改善的矽化物形成方法。
一個實施例中，一種形成矽化鈦層的方法包括：在處理腔室中將基板加熱到範圍在約攝氏400度至約攝氏500度內的溫度；在將處理腔室內的壓力維持在約10托耳至約100托耳之間的同時，同步地將該基板暴露至矽前驅物及鈦前驅物，該鈦前驅物包括TiCl4 ；以及在該基板上形成矽化鈦層。
另一實施例中，一種形成矽化鈦層的方法包括：在處理腔室中將基板加熱到範圍在約攝氏400度至約攝氏500度內的溫度，其中該基板包括矽層，該矽層具有濃度範圍在約1x1018 原子/cm3 至約4x1021 原子/cm3 內的n型摻雜劑；在將處理腔室內的壓力維持在約80托耳至約100托耳之間的同時，同步地將該基板暴露至矽前驅物及鈦前驅物，該鈦前驅物包括TiCl4 ；以及在該矽層上形成矽化鈦層。
另一實施例中，一種形成矽化鈦層的方法包括：在處理腔室中將基板加熱到範圍在約攝氏400度至約攝氏500度內的溫度，其中該基板包括在該基板上的鍺層；在將處理腔室內的壓力維持在約80托耳至約100托耳之間的同時，同步地將該基板暴露至矽前驅物及鈦前驅物，該鈦前驅物包括TiCl4 ；以及在該鍺層上形成矽化鈦層。
本案揭露內容大致上關於在基板上選擇性形成矽化鈦的方法。大致上與接觸件結構整合方案一併利用該等方法。一個實施例中，在基板上選擇性形成矽化鈦材料而作為源極/汲極區域上的界面層。可在約攝氏400度至約攝氏500度的範圍內的溫度形成矽化鈦層。所得的矽化鈦呈現期望的接觸電阻及在先進接觸件整合方案中的可應用性。
第1圖說明根據本文所述之一個實施例的方法100的操作。在操作102，基板經受預清潔製程。該基板為矽基板（諸如n型矽基板），然而，作為替代方案，該基板可為鍺或矽鍺基板。該基板包括形成於該基板上的一或多個源極/汲極（S/D）區域、接觸件溝槽、或類似物。該S/D區域是由磊晶材料形成或包括沉積在該S/D區域上的磊晶材料。該S/D區域是各別以n型或p型摻雜劑摻雜的矽、鍺、或矽鍺。
本文所述的磊晶材料包括下述之一或多者：矽、摻雜磷的矽、高度應變摻雜磷的矽、鍺、摻雜磷的鍺、矽鍺、或摻雜磷的矽鍺。雖然可針對n型摻雜劑（諸如磷）描述本文的實施例，但考慮可利用其他的摻雜劑，包括砷及銻。也可利用p型摻雜劑，包括硼、鋁、鎵及銦。
預清潔製程從基板、S/D區域、及/或S/D區域上形成的磊晶層的表面移除原生氧化物或其他污染物。適合的預清潔製程包括可購自美國加州Santa Clara的應用材料公司的SICONI®預清潔製程。然而，考量也可根據本文所述之實施例實行來自其他製造商的適合的清潔製程。
於操作102清潔基板之後，在操作104將n型矽層沉積在S/D區域上方。該n型矽層是在低溫（例如約攝氏400度至約攝氏500度）化學氣相沉積（CVD）製程中沉積。n型矽是透過矽前驅物沉積，該矽前驅物諸如甲矽烷（SiH4 ）或更高級的矽烷，包括Si2 H6 、Si3 H8 、及Si4 H10 。在CVD製程期間可將n型摻雜劑（諸如磷摻雜劑，例如磷化氫）納入處理氣體中，以摻雜n型矽達到期望的摻雜劑水準。可利用遮蔽及/或蝕刻操作以在期望區域沉積n型矽層。操作104中，若視情況任選的磊晶材料存在於S/D區域上，則n型矽層沉積在該視情況任選的磊晶材料上。
接著，於操作106，將高度摻雜的n型矽層沉積在n型矽層上。該高度摻雜的n型矽層可為非晶、結晶、或多晶矽。該高度摻雜的矽層是以與操作104中沉積的n型矽層相同的方式沉積。這樣的範例中，使用相同的前驅物與摻雜劑沉積該n型矽層，但該n型矽層被摻雜至更大的n型摻雜劑濃度。一個範例中，將該高度摻雜的n型矽層摻雜到約1x1018 原子/cm3 至約4x1021 原子/cm3 的濃度。相對更高的摻雜劑濃度有助於在上面生長金屬矽化物膜，如針對操作108所討論。可將該高度摻雜的n型矽層沉積達範圍為約1奈米至約10奈米內的厚度，諸如3奈米至約7奈米，例如約5奈米或更小。
在操作108中，矽化鈦層形成於操作106的高度摻雜的n型矽層上。該矽化鈦層是在範圍為約10托耳至約100托耳（諸如約80托耳至約100托耳）內的腔室壓力形成。形成矽化鈦層期間，基板的溫度維持在約攝氏400度至約攝氏500度的範圍內。相信本文所述的溫度及壓力範圍助於矽化鈦層的成核。矽化鈦層的沉積速率隨著溫度而不同。一個範例中，矽化鈦層的生長速率範圍是從在攝氏400度每分鐘約3.5埃至在攝氏500度每分鐘約100埃。
矽化鈦層是在CVD製程中使用矽前驅物與鈦前驅物形成，該CVD製程諸如單一沉積步驟熱CVD（例如無電漿）製程，該矽前驅物與該鈦前驅物透過同步流動進入處理腔室而同步地暴露至基板。一個範例中，矽前驅物是甲矽烷，且是以約10-120sccm（諸如約100sccm）的流速提供該矽前驅物。視情況任選，可與該甲矽烷同步提供乙矽烷或更高級的矽烷，以助於矽化。鈦前驅物是TiCl4 ，且是以約0.1至約1sccm（諸如約0.2sccm）的流速提供該鈦前驅物。該矽前驅物氣體與該鈦前驅物氣體可與載氣共同流動，該載氣諸如氫氣，流速為10sccm至約100sccm，諸如約20sccm。
一個範例中，根據本文所述之製程生長的矽化鈦層具有約Si0.95Ti0.05的組成。另一範例的矽化鈦層具有25微歐姆/cm或更小的電阻率，諸如20微歐姆/cm或更小。此外，根據上述製程生長的矽化鈦層呈現對抗氧化物及氮化物(諸如氧化矽、氮化矽、及氧碳化矽)的選擇性。
視情況任選地，在操作110中，可執行一或多個後矽化製程。後矽化製程可包括用於完成元件處理的額外製程。示範性製程包括矽化鈦層的鈍化。鈍化可包括將該矽化鈦層暴露至氮電漿，或將氮化鈦層沉積在矽化鈦層上方。另外，後矽化製程包括動態表面退火、金屬插塞形成(例如鎢或鈷插塞)、及類似操作。
雖然第1圖說明一個實施例，但也考慮其他實施例。另一實施例中，考慮可排除操作104。另一範例中，該高度摻雜的n型矽層(於操作106中形成)可視情況任選地由鍺層或高度摻雜的n型鍺層所取代。另一範例中，作為替代方案或附加方案，該高度摻雜的n型矽層可包括鈦以作為摻雜劑。這樣的範例中，TiCl4可與其他前驅物共流，該其他前驅物諸如矽前驅物及視情況任選的n型摻雜劑。可以約0.1sccm至約1sccm(諸如約0.2sccm)的流速提供TiCl4。納入鈦有助於在操作108中形成的矽化鈦層的成核。
另一實施例中，可在操作106與108之間執行視情況任選的TiCl4 浸泡，以助於在操作108中形成的矽化鈦層的成核。TiCl4 浸泡可在約80托耳至約100托耳的壓力及約攝氏450度至約攝氏600度的溫度執行。可以50sccm至約100sccm的流速將TiCl4 引入處理腔室達約15秒至約120秒，諸如約30秒至90秒。
一個範例中，矽化鈦層根據本文所述之實施例生長。矽化鈦層形成於鍺膜上。所得的膜形成C49相，且呈現約90微歐姆/cm的電阻率。另一實施例中，矽化鈦層生長於以磷摻雜的結晶矽層上，該磷是在約1x1018 原子/cm3 至約4x1021 原子/cm3 的範圍內。所得的膜是形成於C49相，且呈現約140微歐姆/cm的電阻率。
另一實施例中，矽化鈦層生長於以磷摻雜的非晶矽層上，該磷是在約1x1018 原子/cm3 至約4x1021 原子/cm3 的範圍內。所得的膜是形成於C49相，且呈現約60微歐姆/cm的電阻率。另一實施例中，矽化鈦層生長於暴露至TiCl4 浴的矽層上，或是在TiCl4 存在下沉積的矽層上。所得的膜是形成於C54相，且呈現約25微歐姆/cm的電阻率。
本文態樣描述用於特定應用的各種流速。應注意，所提供的流速是針對300毫米（mm）基板，諸如300mm的半導體晶圓。考慮用於類似尺寸及不同尺寸基板的其他流速。
第2A圖與第2B圖說明根據本案揭露內容的實施例在各種條件下的矽化鈦膜。第2A圖說明不同溫度下甲矽烷流速為10sccm及50sccm的矽化鈦的生長速率的圖表220。如所說明，矽化鈦的生長溫度受溫度影響更甚於受流速影響。
第2B圖說明各種基板上矽化鈦的生長速率的圖表230。如第2B圖中所說明，矽化鈦生長在鍺、結晶高度摻雜SiP（例如，磷濃度為約1x1018 原子/cm3 至約4x1021 原子/cm3 ）、非晶高度摻雜SiP、及鈦摻雜或TiCl4 浸泡的矽上。與此成對比，本案揭露內容的矽化鈦並未可觀地生長在氧化物、氮化物或磷濃度小於約1x1018 原子/cm3 的矽上（例如，選擇性抵抗上述氧化物、氮化物或磷濃度小於約1x1018 原子/cm3 的矽）。
第3圖說明根據本案揭露內容之一個實施例形成的元件350。該元件350包括基板351，該基板351具有形成在該基板351上的S/D區域356。場氧化物層352形成為鄰近S/D區域356以界定該S/D區域356。閘極絕緣層353與閘電極354配置在基板351上方。絕緣層355配置在閘電極354之上表面與側面上方。
該元件也包括一或多個第一n型矽層359（於操作104中沉積）、一或多個高度摻雜的n型矽層360（於操作106中沉積）、及矽化鈦層361（於操作108中形成）。考量可利用其他元件及其他層堆疊。
本案揭露內容的優點包括在比習知技術還要低溫所形成的矽化鈦方法，從而緩和習知矽化物形成操作中常見的熱預算問題。此外，本文所述之態樣以相較於習知途徑更為減少的培養時間形成矽化物層。再者，根據本文之態樣形成的矽化鈦層選擇性對抗氧化物與氮化物層，藉此減少習知途徑中所用的遮蔽/蝕刻操作。
雖上文是針對本案揭露內容之實施例，但可不背離本案揭露內容之基本範疇設計本案揭露內容之其他與進一步之實施例，且本案揭露內容之範疇由下文的申請專利範圍所決定。
100‧‧‧方法102-110‧‧‧操作220‧‧‧圖表230‧‧‧圖表350‧‧‧元件351‧‧‧基板352‧‧‧場氧化物層353‧‧‧閘極絕緣層354‧‧‧閘電極355‧‧‧絕緣層356‧‧‧S/D區域359‧‧‧第一n型矽層360‧‧‧高度摻雜的n型矽層361‧‧‧矽化鈦層
透過參考其中一些在附圖中說明的實施例，可得到上文簡要總結的本案揭露內容之更特定的敘述，而能夠詳細瞭解本案揭露內容的上述特徵。然而，注意附圖所說明的僅為示範性實施例，故不應被視為限制範疇，因本案揭露內容可容許其他等效實施例。
第1圖說明根據本案揭露內容之一個實施例的方法的操作。
第2A圖與第2B圖說明根據本案揭露內容之實施例的各種條件下的矽化鈦膜。
第3圖說明根據本案揭露內容之一個實施例形成的元件。
為了助於瞭解，如可能則已使用相同的元件符號指定各圖共通的相同元件。考慮一個實施例的元件及特徵可有利地併入其他實施例中而無須贅述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100‧‧‧方法
102-110‧‧‧操作

Claims (20)

  1. 一種形成矽化鈦層的方法，包括下述步驟：在一處理腔室中將一基板加熱到範圍在攝氏400度至攝氏500度內的溫度，該基板包括：一或多個源極/汲極區域；一或多個第一n型矽層，配置在該一或多個源極/汲極區域上；及一或多個高度摻雜的n型矽層，配置在該一或多個第一n型矽層上，該一或多個高度摻雜的n型矽層之每一者具有範圍在約1x1018原子/cm3至約4x1021原子/cm3內的一n型摻雜劑濃度；及在將該處理腔室內的壓力維持在10托耳至100托耳之間的同時，同步地將該基板暴露至一矽前驅物及一鈦前驅物，該鈦前驅物包括TiCl4；以及在該一或多個高度摻雜的n型矽層上形成一矽化鈦層。
  2. 如請求項1所述之方法，其中該n型摻雜劑是磷。
  3. 如請求項2所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者包括非晶矽。
  4. 如請求項2所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者包括結晶矽。
  5. 如請求項1所述之方法，其中該n型摻雜劑是砷或銻。
  6. 如請求項1所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者包括鈦。
  7. 如請求項1所述之方法，其中該處理腔室內的壓力是在80托耳至100托耳的範圍內。
  8. 如請求項1所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者具有1奈米至10奈米的厚度。
  9. 如請求項1所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者具有5奈米或更小的厚度。
  10. 如請求項1所述之方法，進一步包括下述步驟：形成該矽化鈦層之前，將該基板暴露至一TiCl4浸泡。
  11. 如請求項10所述之方法，其中該TiCl4浸泡執行達15秒至120秒。
  12. 如請求項1所述之方法，其中該矽化鈦層是C49相。
  13. 如請求項1所述之方法，其中該矽化鈦層是C54相。
  14. 如請求項1所述之方法，其中該一或多個 高度摻雜的n型矽層包括鍺。
  15. 如請求項1所述之方法，其中該基板進一步包括多個場氧化物層，且相對於該等場氧化物層，該矽化鈦之形成是選擇性的(selective)。
  16. 如請求項1所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者的摻雜劑濃度高於該一或多個第一n型矽層的每一者。
  17. 一種形成矽化鈦層的方法，包括下述步驟：在一處理腔室中將一基板加熱到範圍在攝氏400度至攝氏500度內的溫度，該基板包括：一或多個第一n型矽層；及一或多個高度摻雜的n型矽層，配置在該一或多個第一n型矽層上面，該一或多個高度摻雜的n型矽層具有範圍在約1x1018原子/cm3至約4x1021原子/cm3內的一n型摻雜劑濃度；在將處理腔室內的壓力維持在80托耳至100托耳之間的同時，同步地將該基板暴露至一矽前驅物及一鈦前驅物，該鈦前驅物包括TiCl4；以及在該一或多個高度摻雜的n型矽層上形成一矽化鈦層。
  18. 如請求項17所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者的摻雜劑濃度高於該 一或多個第一n型矽層的每一者。
  19. 如請求項17所述之方法，其中該一或多個高度摻雜的n型矽層之至少一者的厚度是在1奈米至10奈米的範圍內。
  20. 如請求項19所述之方法，其中該n型摻雜劑是磷。
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