TWI720181B - 薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法 - Google Patents
薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法 Download PDFInfo
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- TWI720181B TWI720181B TW106112488A TW106112488A TWI720181B TW I720181 B TWI720181 B TW I720181B TW 106112488 A TW106112488 A TW 106112488A TW 106112488 A TW106112488 A TW 106112488A TW I720181 B TWI720181 B TW I720181B
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 4
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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US11850620B1 (en) * | 2018-12-03 | 2023-12-26 | Mochii, Inc. | Coating of samples for microscopy |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120325319A1 (en) * | 2011-06-23 | 2012-12-27 | Konica Minolta Business Technologies, Inc. | Photoelectric conversion element, method for producing photoelectric conversion element and solar cell |
US20140124034A1 (en) * | 2011-06-27 | 2014-05-08 | Dexerials Corporation | Solar cell module and solar cell module manufacturing method |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57134558A (en) * | 1981-02-16 | 1982-08-19 | Fuji Photo Film Co Ltd | Production of organic vapor deposited thin film |
JPH1171665A (ja) * | 1997-08-29 | 1999-03-16 | Toppan Printing Co Ltd | 防汚性薄膜の形成方法 |
JP3870516B2 (ja) * | 1997-11-12 | 2007-01-17 | 凸版印刷株式会社 | 防汚性薄膜の形成方法 |
JP4630443B2 (ja) * | 2000-10-23 | 2011-02-09 | キヤノン株式会社 | スパッタリングによる成膜方法 |
US6740586B1 (en) * | 2002-11-06 | 2004-05-25 | Advanced Technology Materials, Inc. | Vapor delivery system for solid precursors and method of using same |
US7220603B2 (en) * | 2003-09-19 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device and manufacturing apparatus |
KR100601503B1 (ko) * | 2004-09-24 | 2006-07-19 | 삼성에스디아이 주식회사 | 증착 장치 |
JPWO2007026545A1 (ja) * | 2005-08-31 | 2009-03-05 | コニカミノルタホールディングス株式会社 | プラズマ放電処理装置及びガスバリア性フィルムの製造方法 |
US7585547B2 (en) * | 2006-04-13 | 2009-09-08 | Solopower, Inc. | Method and apparatus to form thin layers of materials on a base |
JPWO2009020073A1 (ja) * | 2007-08-06 | 2010-11-04 | シャープ株式会社 | 薄膜光電変換モジュールの製造方法および製造装置 |
KR100962967B1 (ko) * | 2007-11-08 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 증발원 |
CN102639749B (zh) * | 2009-10-14 | 2015-06-17 | 莲花应用技术有限责任公司 | 在原子层沉积系统中抑制过量前体在单独前体区之间运送 |
JP2011174097A (ja) * | 2010-02-23 | 2011-09-08 | Hitachi Zosen Corp | 熱cvd法および熱cvd装置並びにカーボンナノチューブの製造方法および製造装置 |
EP2660042B1 (en) * | 2010-12-27 | 2015-04-29 | Konica Minolta, Inc. | Method for manufacturing gas-barrier film, gas-barrier film, and electronic device |
JP2012144783A (ja) * | 2011-01-13 | 2012-08-02 | Panasonic Corp | 薄膜製造装置及び薄膜製造方法 |
KR101097593B1 (ko) * | 2011-03-11 | 2011-12-22 | 주식회사 선익시스템 | 박막의 두께 제어의 정확도 향상을 위한 박막 증착 장치 |
JP6021138B2 (ja) * | 2011-05-27 | 2016-11-09 | デクセリアルズ株式会社 | 太陽電池モジュール、太陽電池モジュールの製造方法、及び薄膜太陽電池用タブ線 |
JP5862080B2 (ja) | 2011-07-06 | 2016-02-16 | ソニー株式会社 | グラフェンの製造方法及びグラフェン製造装置 |
JP2013082959A (ja) * | 2011-10-07 | 2013-05-09 | Sony Corp | 自己停止反応成膜装置及び自己停止反応成膜方法 |
JP5958092B2 (ja) * | 2012-05-31 | 2016-07-27 | ソニー株式会社 | 成膜装置及び成膜方法 |
KR101364978B1 (ko) * | 2012-08-16 | 2014-02-21 | 주식회사 선익시스템 | 분리형 증착물질 공급장치 |
KR101418712B1 (ko) * | 2012-09-14 | 2014-07-10 | 주식회사 선익시스템 | 증발원 및 이를 구비한 증착 장치 |
KR20140121664A (ko) * | 2013-04-08 | 2014-10-16 | 엘지전자 주식회사 | 롤투롤 방식의 박막 제작 장치 |
KR20150012806A (ko) * | 2013-07-26 | 2015-02-04 | 주식회사 선익시스템 | 증착 장치 |
KR102096946B1 (ko) * | 2013-08-07 | 2020-04-03 | 주식회사 선익시스템 | 증발원용 히터블록 |
KR102227546B1 (ko) * | 2014-01-20 | 2021-03-15 | 주식회사 선익시스템 | 대용량 증발원 및 이를 포함하는 증착장치 |
KR102260572B1 (ko) * | 2014-07-07 | 2021-06-07 | (주)선익시스템 | 복수의 증발원을 갖는 박막 증착장치 |
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