TWI720181B - 薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法 - Google Patents

薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法 Download PDF

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TWI720181B
TWI720181B TW106112488A TW106112488A TWI720181B TW I720181 B TWI720181 B TW I720181B TW 106112488 A TW106112488 A TW 106112488A TW 106112488 A TW106112488 A TW 106112488A TW I720181 B TWI720181 B TW I720181B
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terminal
film
forming
thin film
manufacturing
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TW201807852A (zh
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角野宏治
今泉伸治
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日商新力股份有限公司
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018109936A1 (de) * 2018-04-25 2019-10-31 Aixtron Se Mit mehreren zweidimensionalen Schichten beschichtetes Bauteil sowie Beschichtungsverfahren
US11850620B1 (en) * 2018-12-03 2023-12-26 Mochii, Inc. Coating of samples for microscopy
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120325319A1 (en) * 2011-06-23 2012-12-27 Konica Minolta Business Technologies, Inc. Photoelectric conversion element, method for producing photoelectric conversion element and solar cell
US20140124034A1 (en) * 2011-06-27 2014-05-08 Dexerials Corporation Solar cell module and solar cell module manufacturing method

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134558A (en) * 1981-02-16 1982-08-19 Fuji Photo Film Co Ltd Production of organic vapor deposited thin film
JPH1171665A (ja) * 1997-08-29 1999-03-16 Toppan Printing Co Ltd 防汚性薄膜の形成方法
JP3870516B2 (ja) * 1997-11-12 2007-01-17 凸版印刷株式会社 防汚性薄膜の形成方法
JP4630443B2 (ja) * 2000-10-23 2011-02-09 キヤノン株式会社 スパッタリングによる成膜方法
US6740586B1 (en) * 2002-11-06 2004-05-25 Advanced Technology Materials, Inc. Vapor delivery system for solid precursors and method of using same
US7220603B2 (en) * 2003-09-19 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device and manufacturing apparatus
KR100601503B1 (ko) * 2004-09-24 2006-07-19 삼성에스디아이 주식회사 증착 장치
JPWO2007026545A1 (ja) * 2005-08-31 2009-03-05 コニカミノルタホールディングス株式会社 プラズマ放電処理装置及びガスバリア性フィルムの製造方法
US7585547B2 (en) * 2006-04-13 2009-09-08 Solopower, Inc. Method and apparatus to form thin layers of materials on a base
JPWO2009020073A1 (ja) * 2007-08-06 2010-11-04 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
KR100962967B1 (ko) * 2007-11-08 2010-06-10 삼성모바일디스플레이주식회사 증발원
CN102639749B (zh) * 2009-10-14 2015-06-17 莲花应用技术有限责任公司 在原子层沉积系统中抑制过量前体在单独前体区之间运送
JP2011174097A (ja) * 2010-02-23 2011-09-08 Hitachi Zosen Corp 熱cvd法および熱cvd装置並びにカーボンナノチューブの製造方法および製造装置
EP2660042B1 (en) * 2010-12-27 2015-04-29 Konica Minolta, Inc. Method for manufacturing gas-barrier film, gas-barrier film, and electronic device
JP2012144783A (ja) * 2011-01-13 2012-08-02 Panasonic Corp 薄膜製造装置及び薄膜製造方法
KR101097593B1 (ko) * 2011-03-11 2011-12-22 주식회사 선익시스템 박막의 두께 제어의 정확도 향상을 위한 박막 증착 장치
JP6021138B2 (ja) * 2011-05-27 2016-11-09 デクセリアルズ株式会社 太陽電池モジュール、太陽電池モジュールの製造方法、及び薄膜太陽電池用タブ線
JP5862080B2 (ja) 2011-07-06 2016-02-16 ソニー株式会社 グラフェンの製造方法及びグラフェン製造装置
JP2013082959A (ja) * 2011-10-07 2013-05-09 Sony Corp 自己停止反応成膜装置及び自己停止反応成膜方法
JP5958092B2 (ja) * 2012-05-31 2016-07-27 ソニー株式会社 成膜装置及び成膜方法
KR101364978B1 (ko) * 2012-08-16 2014-02-21 주식회사 선익시스템 분리형 증착물질 공급장치
KR101418712B1 (ko) * 2012-09-14 2014-07-10 주식회사 선익시스템 증발원 및 이를 구비한 증착 장치
KR20140121664A (ko) * 2013-04-08 2014-10-16 엘지전자 주식회사 롤투롤 방식의 박막 제작 장치
KR20150012806A (ko) * 2013-07-26 2015-02-04 주식회사 선익시스템 증착 장치
KR102096946B1 (ko) * 2013-08-07 2020-04-03 주식회사 선익시스템 증발원용 히터블록
KR102227546B1 (ko) * 2014-01-20 2021-03-15 주식회사 선익시스템 대용량 증발원 및 이를 포함하는 증착장치
KR102260572B1 (ko) * 2014-07-07 2021-06-07 (주)선익시스템 복수의 증발원을 갖는 박막 증착장치
KR20160112293A (ko) * 2015-03-18 2016-09-28 주식회사 선익시스템 증발원 및 이를 포함하는 증착장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120325319A1 (en) * 2011-06-23 2012-12-27 Konica Minolta Business Technologies, Inc. Photoelectric conversion element, method for producing photoelectric conversion element and solar cell
US20140124034A1 (en) * 2011-06-27 2014-05-08 Dexerials Corporation Solar cell module and solar cell module manufacturing method

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