TWI719896B - 黏晶裝置，剝離單元，夾頭及半導體裝置的製造方法 - Google Patents

黏晶裝置，剝離單元，夾頭及半導體裝置的製造方法 Download PDF

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Publication number
TWI719896B
TWI719896B TW109115701A TW109115701A TWI719896B TW I719896 B TWI719896 B TW I719896B TW 109115701 A TW109115701 A TW 109115701A TW 109115701 A TW109115701 A TW 109115701A TW I719896 B TWI719896 B TW I719896B
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TW
Taiwan
Prior art keywords
die
dicing tape
chuck
movable platform
aforementioned
Prior art date
Application number
TW109115701A
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English (en)
Chinese (zh)
Other versions
TW202113992A (zh
Inventor
牧浩
齊藤明
横森剛
Original Assignee
日商捷進科技有限公司
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Publication of TWI719896B publication Critical patent/TWI719896B/zh
Publication of TW202113992A publication Critical patent/TW202113992A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
TW109115701A 2019-09-17 2020-05-12 黏晶裝置，剝離單元，夾頭及半導體裝置的製造方法 TWI719896B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019168865A JP7377654B2 (ja) 2019-09-17 2019-09-17 ダイボンディング装置、剥離ユニット、コレットおよび半導体装置の製造方法
JP2019-168865 2019-09-17

Publications (2)

Publication Number Publication Date
TWI719896B true TWI719896B (zh) 2021-02-21
TW202113992A TW202113992A (zh) 2021-04-01

Family

ID=74876585

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109115701A TWI719896B (zh) 2019-09-17 2020-05-12 黏晶裝置，剝離單元，夾頭及半導體裝置的製造方法

Country Status (4)

Country Link
JP (1) JP7377654B2 (ko)
KR (1) KR102430326B1 (ko)
CN (1) CN112530834B (ko)
TW (1) TWI719896B (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050081986A1 (en) * 2003-10-15 2005-04-21 Heung-Kyu Kwon Die bonding apparatus and method for bonding semiconductor chip using the same
US20100055878A1 (en) * 2006-05-23 2010-03-04 Renesas Technology Corp. Fabrication Method of Semiconductor Device
US20150348882A1 (en) * 2014-06-02 2015-12-03 Infineon Technologies Ag Three-dimensional stack of leaded package and electronic member

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4226489B2 (ja) * 2004-02-25 2009-02-18 日東電工株式会社 チップのピックアップ方法
JP2005322815A (ja) * 2004-05-11 2005-11-17 Matsushita Electric Ind Co Ltd 半導体製造装置および半導体装置の製造方法
JP4664150B2 (ja) * 2005-08-05 2011-04-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
JP5160135B2 (ja) * 2007-04-18 2013-03-13 キヤノンマシナリー株式会社 半導体装置の製造装置及び製造方法
JP4397429B1 (ja) 2009-03-05 2010-01-13 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
JP5284144B2 (ja) * 2009-03-11 2013-09-11 芝浦メカトロニクス株式会社 半導体チップのピックアップ装置及びピックアップ方法
KR101562021B1 (ko) * 2009-08-11 2015-10-20 삼성전자주식회사 반도체 칩 부착 장치 및 반도체 칩 부착 방법
JP5813432B2 (ja) * 2011-09-19 2015-11-17 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
KR101385443B1 (ko) * 2013-09-13 2014-04-16 이향이 반도체 칩 픽업 이송용 콜렛
JP6349496B2 (ja) * 2014-02-24 2018-07-04 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
JP6018670B2 (ja) 2015-06-15 2016-11-02 株式会社東芝 ダイボンディング装置、および、ダイボンディング方法
EP3234992B1 (de) * 2016-01-29 2018-09-26 JENOPTIK Optical Systems GmbH Verfahren und vorrichtung zum herauslösen eines mikro-chips aus einem wafer und aufbringen des mikro-chips auf ein substrat
JP6621771B2 (ja) * 2017-01-25 2019-12-18 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6653273B2 (ja) * 2017-01-26 2020-02-26 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6941513B2 (ja) * 2017-09-07 2021-09-29 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6967411B2 (ja) * 2017-09-19 2021-11-17 ファスフォードテクノロジ株式会社 半導体製造装置、半導体装置の製造方法およびコレット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050081986A1 (en) * 2003-10-15 2005-04-21 Heung-Kyu Kwon Die bonding apparatus and method for bonding semiconductor chip using the same
US20100055878A1 (en) * 2006-05-23 2010-03-04 Renesas Technology Corp. Fabrication Method of Semiconductor Device
US20150348882A1 (en) * 2014-06-02 2015-12-03 Infineon Technologies Ag Three-dimensional stack of leaded package and electronic member

Also Published As

Publication number Publication date
KR102430326B1 (ko) 2022-08-08
TW202113992A (zh) 2021-04-01
CN112530834A (zh) 2021-03-19
KR20210032893A (ko) 2021-03-25
JP2021048201A (ja) 2021-03-25
JP7377654B2 (ja) 2023-11-10
CN112530834B (zh) 2024-03-08

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