TWI718730B - Exposure apparatus - Google Patents
Exposure apparatus Download PDFInfo
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- TWI718730B TWI718730B TW108139039A TW108139039A TWI718730B TW I718730 B TWI718730 B TW I718730B TW 108139039 A TW108139039 A TW 108139039A TW 108139039 A TW108139039 A TW 108139039A TW I718730 B TWI718730 B TW I718730B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明係關於一種光罩單元、基板處理裝置及光罩單元製造方法、以及基板處理方法。 The present invention relates to a photomask unit, a substrate processing device, a manufacturing method of the photomask unit, and a substrate processing method.
本申請案係根據2012年3月15日申請之日本特願2012-059070號、2012年4月03日申請之日本特願2012-084820號,及2012年4月05日申請之日本特願2012-086539號而主張優先權,並將其內容引用至本文中。 This application is based on Japanese Patent Application No. 2012-059070 filed on March 15, 2012, Japanese Patent Application No. 2012-084820 filed on April 03, 2012, and Japanese Patent Application 2012 filed on April 05, 2012 No. -086539 claims priority and quotes its content in this article.
於液晶顯示元件等大畫面顯示元件中,於在平面狀之玻璃基板上堆積ITO(Indium Tin Oxides,氧化銦錫)等透明電極或Si等半導體物質之基礎上蒸鍍金屬材料,且塗布光阻而轉印電路圖案,並於轉印後使光阻顯影,其後進行蝕刻,藉此形成電路圖案等。然而,隨著顯示元件之大畫面化,玻璃基板大型化,故而基板搬送亦變得困難。因此,提出有於具有可撓性之基板(例如,聚醯亞胺、PET、金屬箔等膜構件等)上形成顯示元件之被稱為輥對輥(roll to roll)方式(以下,簡記作「輥方式」)之技術(例如,參照專利文獻1)。 In large-screen display elements such as liquid crystal display elements, a transparent electrode such as ITO (Indium Tin Oxides) or a semiconductor material such as Si is deposited on a flat glass substrate, and a metal material is deposited and a photoresist is applied. The circuit pattern is transferred, and the photoresist is developed after the transfer, and then etched, thereby forming a circuit pattern and the like. However, as the display element becomes larger and the glass substrate becomes larger, it becomes difficult to transport the substrate. Therefore, it is proposed to form display elements on flexible substrates (for example, film members such as polyimide, PET, metal foil, etc.) called a roll to roll method (hereinafter referred to as abbreviated as “roll to roll”). "Roll method") technology (for example, refer to Patent Document 1).
又,於專利文獻2中,提出有如下技術:接近於可旋轉之圓筒狀之光罩之外周部,而配置捲繞於傳送輥上而移行之可撓性之長條片材(基板),從而將光罩之圖案連續地曝光於基板上。 In addition, Patent Document 2 proposes a technique of arranging a flexible long sheet (substrate) that is wound on a conveying roller and travels close to the outer periphery of a rotatable cylindrical mask. , So as to continuously expose the pattern of the mask on the substrate.
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
[專利文獻1] 國際公開第2008/129819號 [Patent Document 1] International Publication No. 2008/129819
[專利文獻2] 日本實開昭60-019037號公報 [Patent Document 2] Japanese Unexamined Publication No. 60-019037
為了以高精度將光罩之圖案曝光於基板上,必須將光罩與基板之間距量設為適當值,但於間距量偏離適當值之情形時,有可能無法獲得既定之圖案線寬。 In order to expose the pattern of the mask on the substrate with high accuracy, the distance between the mask and the substrate must be set to an appropriate value. However, when the distance deviates from the appropriate value, the predetermined pattern line width may not be obtained.
本發明之態樣之目的在於提供一種可將光罩之圖案以高精度曝光於基板上之基板處理裝置。 The object of the aspect of the present invention is to provide a substrate processing device capable of exposing the pattern of the photomask on the substrate with high precision.
又,於光罩為圓筒狀之情形時,存在難以於圓筒狀之母材之周面上直接形成精密之圖案之情形,從而成為成本增加之一個原因。尤其是於在圓筒狀光罩之內周面形成圖案之情形時,擔心成本會大幅增加,並且圖案精度下降。 In addition, when the photomask is cylindrical, it may be difficult to directly form a precise pattern on the peripheral surface of the cylindrical base material, which is a cause of increase in cost. Especially when a pattern is formed on the inner peripheral surface of a cylindrical mask, there is a concern that the cost will increase significantly and the accuracy of the pattern will decrease.
本發明之態樣之目的亦在於提供一種可抑制成本增加且有助於圖案精度之提高之光罩單元、基板處理裝置及光罩單元製造方法、以及基板處理方法。 The object of the aspect of the present invention is also to provide a photomask unit, a substrate processing apparatus, a photomask unit manufacturing method, and a substrate processing method that can suppress the increase in cost and contribute to the improvement of pattern accuracy.
又,於保持光罩圖案之保持構件、與相對於基板將保持構件支承於既定位置之支承構件之線膨脹係數不同之情形時,會因伴隨著溫度變化所產生之熱伸縮而對保持構件施加應力,從而有於以玻璃等相對較脆弱之材料形成保持構件之情形時造成不良影響之虞。又,於對保持構件施加有應力之情形時,有可能對光罩圖案亦造成影響,且對向基板之轉印精度亦造成影響。 In addition, when the linear expansion coefficients of the holding member holding the mask pattern and the supporting member supporting the holding member at a predetermined position with respect to the substrate are different, the holding member will be applied to the holding member due to thermal expansion and contraction caused by the temperature change. Stress may cause adverse effects when a relatively weak material such as glass is used to form the holding member. In addition, when stress is applied to the holding member, it may also affect the mask pattern and also affect the accuracy of transfer to the substrate.
本發明之態樣之目的亦在於提供一種即使於產生有溫度變動之 情形時亦可抑制對保持光罩圖案之保持構件施加應力之光罩單元及基板處理裝置。 The object of the aspect of the present invention is also to provide a In the case, the photomask unit and the substrate processing apparatus that apply stress to the holding member holding the photomask pattern can also be suppressed.
本發明之一態樣之基板處理裝置,係將沿著圓筒面而保持之光罩之圖案形成於基板之表面所形成之光感應層;具備:光罩保持部,其具備沿著圓筒面保持光罩之光罩保持面,且可繞既定之軸線旋轉;環繞保持部,其具備接觸保持基板之基板保持面,且可繞與既定之軸線大致平行之軸線環繞;及間距形成部,其於光罩保持面與基板保持面之間形成既定量之間距。 A substrate processing apparatus of one aspect of the present invention is a photo-sensitive layer formed by forming a pattern of a photomask held along a cylindrical surface on the surface of a substrate; The reticle holding surface of the face holding reticle can be rotated around a predetermined axis; the surrounding holding portion is provided with a substrate holding surface contacting and holding the substrate and can be circumscribed around an axis substantially parallel to the predetermined axis; and a spacing forming portion, It forms a predetermined distance between the mask holding surface and the substrate holding surface.
本發明之一態樣之光罩單元,具備光罩保持部,該光罩保持部係將由玻璃材料形成之光罩作為保持對象,沿著圓筒面於周面上保持光罩,可繞既定之軸線旋轉,且由玻璃材料形成。 A photomask unit according to one aspect of the present invention is provided with a photomask holding portion which uses a photomask formed of a glass material as a holding object, and holds the photomask on the peripheral surface along the cylindrical surface, and can be wound around a predetermined The axis rotates and is formed of glass material.
本發明之一態樣之基板處理裝置,具備上述態樣之光罩單元、及保持形成光罩之圖案之基板之基板保持部。 A substrate processing apparatus of one aspect of the present invention includes the photomask unit of the above aspect, and a substrate holding portion that retains a substrate forming a pattern of the photomask.
本發明之一態樣之光罩單元製造方法,包含如下步驟:於具有沿圓筒面之周面、可繞既定之軸線旋轉、且由玻璃材料形成之光罩保持部,使由該玻璃材料形成之光罩保持於該周面。 A method of manufacturing a photomask unit of one aspect of the present invention includes the following steps: a photomask holding portion formed of a glass material that has a peripheral surface along a cylindrical surface, can rotate around a predetermined axis, and is made of the glass material The formed mask is held on the peripheral surface.
本發明之一態樣之基板處理方法,包含如下步驟:使用藉由上述態樣之光罩單元製造方法而製造之光罩單元,將光罩之圖案形成於基板。 A substrate processing method of one aspect of the present invention includes the steps of forming a pattern of the photomask on the substrate using the photomask unit manufactured by the photomask unit manufacturing method of the above aspect.
本發明之一態樣之光罩單元,係安裝於既定之處理裝置,受到旋轉驅動力而可繞既定之軸線旋轉之圓筒狀或圓柱狀者;且具備:圓筒狀或圓柱狀之圖案保持構件,其沿著距離軸線具有固定之半徑並且於軸線之方向具有既定尺寸之周面保持光罩圖案;支承構件,其與圖案保持構件物理性地結合,且將圖案保持構件支承於處理裝置之既定位置;及伸縮容許部,其於支承構件與圖案保持構件之物理性結合中,以容許圖案保持構件之軸線方向之伸縮之方式 連結圖案保持構件與支承構件。 The photomask unit of one aspect of the present invention is a cylindrical or cylindrical one that is installed in a predetermined processing device and can be rotated around a predetermined axis by a rotational driving force; and has: a cylindrical or cylindrical pattern A holding member that holds the photomask pattern along a peripheral surface having a fixed radius from the axis and a predetermined size in the direction of the axis; a supporting member that is physically combined with the pattern holding member and supports the pattern holding member to the processing device The predetermined position; and the expansion and contraction allowable part, which in the physical combination of the supporting member and the pattern holding member, allows the expansion and contraction of the pattern holding member in the axial direction Connect the pattern holding member and the supporting member.
本發明之一態樣之基板處理裝置,具備上述態樣之光罩單元、及保持轉印光罩圖案之基板之基板保持單元。 A substrate processing apparatus of one aspect of the present invention includes the photomask unit of the above aspect, and a substrate holding unit for holding a substrate on which the photomask pattern is transferred.
本發明之一態樣之基板處理方法,係使圓筒光罩向沿著長邊方向搬送之基板之表面接近而進行掃描曝光者,該圓筒光罩係沿著距離既定之中心線為固定半徑之外周面設置有電子元件用之圖案且可旋轉者;且上述基板處理方法包含如下步驟:使上述基板接觸保持於藉由繞與上述既定之中心線平行地配置之軸線環繞之環繞驅動部進行移動之基板保持部,而沿著上述長邊方向搬送上述基板;及使自上述中心線以既定半徑設置於上述圓筒光罩之上述中心線之方向之兩端側的環狀之設置部與上述環繞驅動部或上述基板保持部之一部分接觸,藉此一面呈既定之近接間距設定上述基板之表面與上述圓筒光罩之外周面,一面使上述圓筒光罩繞上述中心線旋轉。 In the substrate processing method of one aspect of the present invention, the cylindrical mask is approached to the surface of the substrate conveyed along the longitudinal direction for scanning exposure, and the cylindrical mask is fixed along a predetermined center line. The outer peripheral surface of the radius is provided with a pattern for electronic components and is rotatable; and the above-mentioned substrate processing method includes the following steps: the above-mentioned substrate is kept in contact with a surrounding driving part surrounded by an axis arranged in parallel with the above-mentioned predetermined centerline A moving substrate holding portion that conveys the substrate along the longitudinal direction; and a ring-shaped setting portion that is set on both ends of the cylindrical mask with a predetermined radius from the center line in the direction of the center line The surface of the substrate and the outer peripheral surface of the cylindrical mask are set in contact with the surrounding driving part or a part of the substrate holding part, whereby the cylindrical mask is rotated around the center line while setting the surface of the substrate and the outer peripheral surface of the cylindrical mask at a predetermined close distance.
根據本發明之態樣,可將光罩之圖案以高精度曝光於基板。 According to the aspect of the present invention, the pattern of the mask can be exposed to the substrate with high precision.
又,根據本發明之態樣,可不導致成本增加,而使用圓筒狀之光罩圖案於基板上實現高精度之轉印曝光。 In addition, according to the aspect of the present invention, it is possible to use a cylindrical mask pattern on the substrate to achieve high-precision transfer exposure without causing cost increase.
又,根據本發明之態樣,即使於產生有溫度變動之情形時亦可抑制對保持光罩圖案之保持構件施加應力,從而可進行使用光罩圖案之高精度之處理。 Furthermore, according to the aspect of the present invention, even when there is a temperature fluctuation, it is possible to suppress the application of stress to the holding member holding the photomask pattern, so that high-precision processing using the photomask pattern can be performed.
10:照明部 10: Lighting Department
11:基板供給部 11: Substrate supply department
12:基板回收部 12: Substrate Recycling Department
20:光罩保持部 20: Mask holding part
21:內筒 21: inner cylinder
21a:開口部 21a: opening
22:保持部本體(圖案保持構件) 22: Holder body (pattern holding member)
22a:光罩保持面(外周面、周面) 22a: Mask holding surface (outer peripheral surface, peripheral surface)
23、23A、23B:保持具(環狀部) 23, 23A, 23B: retainer (ring part)
23a:接著劑(第2伸縮容許部) 23a: Adhesive (2nd expansion and contraction allowable part)
23b:保持具之外周面 23b: Outer peripheral surface of retainer
23c、55:槽部 23c, 55: Groove
24、28:板彈簧(伸縮吸收部、彈性構件) 24, 28: Leaf spring (expandable absorption part, elastic member)
24A、24B:間隔件 24A, 24B: spacer
25:轉動體(間距形成部、支承構件) 25: Rotating body (pitch forming part, support member)
25a:壓印滾筒設置部 25a: Impression cylinder setting part
25b:斜面 25b: inclined plane
26、35、42:空氣軸承 26, 35, 42: Air bearing
27:支承台 27: Support table
30、DR5:壓印滾筒體(基板保持部、環繞保持部、旋轉筒) 30.DR5: Impression cylinder body (substrate holding part, surrounding holding part, rotating cylinder)
30a:中空部 30a: Hollow part
31:基板保持面 31: substrate holding surface
32:旋轉支承部 32: Rotating support part
33:驅動裝置 33: Drive
34、86:旋轉軸 34, 86: Rotation axis
36:終端筒 36: terminal tube
37:固定桿 37: fixed rod
39A:供給部 39A: Supply Department
39B:排出部 39B: Discharge part
40:測量部 40: Measurement Department
41:移位部 41: shift part
43、46:導軌 43, 46: rail
44、47:驅動部 44, 47: drive unit
48:位移平台(第2調整部) 48: Displacement platform (Second adjustment part)
50:測量部(檢測部) 50: Measurement Department (Detection Department)
51A、51B:支承構件 51A, 51B: supporting member
52A、52B:導引部 52A, 52B: Guiding part
53A、53B:空氣缸(賦能部) 53A, 53B: Air Cylinder (Energy Department)
54:支承壁 54: support wall
56:襯墊部 56: Pad part
61:移位環 61: shift ring
61a:移位環之斜面 61a: The slope of the shift ring
62:調整螺釘部(負載賦予部) 62: Adjusting screw part (load applying part)
62a:軸部 62a: Shaft
62b:頭部 62b: head
70:密封部(固定部) 70: Sealing part (fixed part)
71、72:係合部 71, 72: Department of the Department
80:基板支承機構 80: substrate support mechanism
81:帶部(環形帶) 81: Belt part (loop belt)
81a:支承面(基板保持面) 81a: Support surface (substrate holding surface)
81b:背面 81b: back
82:帶搬送部 82: With conveying department
82a、82b:搬送輥 82a, 82b: Conveying roller
82e:驅動部(環繞驅動部) 82e: Drive section (surround drive section)
83:導引平台(流體支承部) 83: Guidance platform (fluid support part)
83a:導引面 83a: guide surface
84:輪列機構 84: Rotation mechanism
85:光罩驅動輥(旋轉部) 85: Mask drive roller (rotating part)
87:軸承 87: Bearing
88:升降裝置(移動部) 88: Lifting device (moving part)
89:導引平台之供給部 89: Guidance Platform Supply Department
90:基板搬送部 90: Board transfer department
100、200、300:基板處理裝置 100, 200, 300: substrate processing equipment
AX1:旋轉軸線(既定之軸線) AX1: Rotation axis (established axis)
AX2:旋轉軸線(第2軸線) AX2: Rotation axis (2nd axis)
AX3:軸線 AX3: axis
M:光罩 M: Mask
MT:驅動裝置(第1調整部) MT: drive unit (first adjustment part)
Ma:光罩分離區域 Ma: Mask separation area
S、P:基板 S, P: substrate
SM1、SM2、31B:填隙片(修正部) SM1, SM2, 31B: shims (correction part)
B:基座部 B: Base part
R:導輥 R: Guide roller
FM:指標標記(指標部) FM: Indicator Mark (Indicator Department)
MM:光罩標記 MM: Mask mark
MU、MU2:光罩單元 MU, MU2: mask unit
VC:抽吸部(固定部) VC: suction part (fixed part)
SU:基板保持單元 SU: substrate holding unit
CONT:控制部 CONT: Control Department
CONT2:上位控制裝置 CONT2: Upper control device
AL1、AL2、AM1、AM2:對準顯微鏡 AL1, AL2, AM1, AM2: Align the microscope
X、Y、Z、θY:方向 X, Y, Z, θY: direction
DX:旋轉軸線AX1與旋轉軸線AX2之軸間距離 DX: The distance between the axis of rotation AX1 and the axis of rotation AX2
Cx:間隙之大致中間之位置 Cx: roughly the middle of the gap
r1:壓印滾筒設置部之半徑 r1: The radius of the impression cylinder setting part
r2:基板保持面之半徑 r2: The radius of the substrate holding surface
r11:光罩保持面之半徑 r11: The radius of the mask holding surface
G:間距 G: Spacing
Mt:光罩之厚度 Mt: The thickness of the mask
St:基板之厚度 St: The thickness of the substrate
Ta:接觸範圍 Ta: contact range
t1:SM1之厚度 t1: thickness of SM1
t2:SM2之厚度 t2: thickness of SM2
tf:填隙片SM1、SM2之抵接面 tf: the contact surface of the shims SM1 and SM2
FLX:撓曲構造體 FLX: Flexural structure
T:切線方向 T: Tangent direction
SYS:元件製造系統 SYS: Component Manufacturing System
U1、U2、U3、U4、U5…Un:處理裝置 U1, U2, U3, U4, U5...Un: Processing device
FR1:供給輥 FR1: Supply roller
FR2:回收輥 FR2: Recovery roller
DR1、DR3、DR4、DR6、DR7、DR8:驅動輥 DR1, DR3, DR4, DR6, DR7, DR8: drive roller
DR2:壓印滾筒輥 DR2: Impression roller
EPC、EPC1、EPC2:邊緣位置控制器 EPC, EPC1, EPC2: Edge position controller
Gp1:塗布機構 Gp1: Coating mechanism
Gp2:乾燥機構 Gp2: Drying mechanism
HA1:加熱腔室部 HA1: Heating chamber
HA2:冷卻腔室部 HA2: Cooling chamber part
DL:鬆弛(遊隙) DL: relaxation (clearance)
IU:照明機構 IU: lighting agency
BT1、BT2、BT3:處理槽 BT1, BT2, BT3: processing tank
圖1係第1實施形態之基板處理裝置之主要部分之前視剖面圖。 Fig. 1 is a front sectional view of the main part of the substrate processing apparatus of the first embodiment.
圖2係該基板處理裝置之剖面立體圖。 Fig. 2 is a cross-sectional perspective view of the substrate processing apparatus.
圖3係光罩保持部之端部之主要部分詳細圖。 Fig. 3 is a detailed view of the main part of the end of the mask holder.
圖4係表示設置於光罩保持部之板彈簧之立體圖。 Fig. 4 is a perspective view showing the leaf spring provided in the mask holding portion.
圖5係第2實施形態之光罩保持部之放大剖面圖。 Fig. 5 is an enlarged cross-sectional view of the mask holding portion of the second embodiment.
圖6係第2實施形態之基板處理裝置之概略剖面圖。 Fig. 6 is a schematic cross-sectional view of the substrate processing apparatus of the second embodiment.
圖7係第3實施形態之基板處理裝置之外觀立體圖。 Fig. 7 is a perspective view of the appearance of the substrate processing apparatus of the third embodiment.
圖8係該基板處理裝置之局部放大圖。 Fig. 8 is a partial enlarged view of the substrate processing apparatus.
圖9係第4實施形態之基板處理裝置之主要部分之前視剖面圖。 Fig. 9 is a front sectional view of the main part of the substrate processing apparatus of the fourth embodiment.
圖10A係表示填隙片之端部之局部放大圖。 Fig. 10A shows a partial enlarged view of the end of the shim.
圖10B係表示填隙片之端部之局部放大圖。 Fig. 10B shows a partial enlarged view of the end of the shim.
圖10C係表示填隙片之端部之局部放大圖。 Fig. 10C shows a partial enlarged view of the end of the shim.
圖11係轉動體與壓印滾筒體之抵接部之局部放大圖。 Fig. 11 is a partial enlarged view of the abutment portion between the rotating body and the impression cylinder body.
圖12係第5實施形態之基板處理裝置之主要部分之前視剖面圖。 Fig. 12 is a front sectional view of the main part of the substrate processing apparatus of the fifth embodiment.
圖13係第6實施形態之基板處理裝置之概略構成圖。 Fig. 13 is a schematic configuration diagram of a substrate processing apparatus according to a sixth embodiment.
圖14係該基板處理裝置之主要部分之前視剖面圖。 Fig. 14 is a front sectional view of the main part of the substrate processing apparatus.
圖15係該基板處理裝置之變形例之概略構成圖。 Fig. 15 is a schematic configuration diagram of a modification of the substrate processing apparatus.
圖16係第7實施形態之基板處理裝置之主要部分之前視剖面圖。 Fig. 16 is a front sectional view of the main part of the substrate processing apparatus of the seventh embodiment.
圖17係構成該基板處理裝置之光罩單元之前視圖 Figure 17 is a front view of the mask unit constituting the substrate processing apparatus
圖18係光罩單元之端部之局部放大圖。 Figure 18 is a partial enlarged view of the end of the mask unit.
圖19係表示元件製造系統之構成之圖。 Fig. 19 is a diagram showing the structure of a component manufacturing system.
圖20係該基板處理裝置之變形例之主要部分之前視剖面圖。 Fig. 20 is a front sectional view of a main part of a modification of the substrate processing apparatus.
圖21係第8實施形態之基板處理裝置之主要部分之前視剖面圖。 Fig. 21 is a front sectional view of the main part of the substrate processing apparatus of the eighth embodiment.
圖22係該基板處理裝置之剖面立體圖。 Fig. 22 is a cross-sectional perspective view of the substrate processing apparatus.
圖23係光罩單元之端部之主要部分詳細圖。 Figure 23 is a detailed view of the main part of the end of the mask unit.
圖24係表示設置於光罩單元之板彈簧之立體圖。 Fig. 24 is a perspective view showing the leaf spring provided in the mask unit.
圖25係表示該板彈簧之詳細情況之圖。 Figure 25 is a diagram showing the details of the leaf spring.
圖26係表示伸縮容許部之變形例之圖。 Fig. 26 is a diagram showing a modification of the expansion and contraction allowable portion.
圖27係表示使光罩之外周面之周邊速度與基板之外周面之周邊速度一致為相同速度之一例之圖。 FIG. 27 is a diagram showing an example of making the peripheral speed of the outer peripheral surface of the mask and the peripheral speed of the outer peripheral surface of the substrate the same speed.
(第1實施形態) (First Embodiment)
以下,參照圖1至圖4,對本發明之基板處理裝置之第1實施形態進行說明。 Hereinafter, with reference to FIGS. 1 to 4, the first embodiment of the substrate processing apparatus of the present invention will be described.
圖1係基板處理裝置100之主要部分之前視剖面圖,圖2係基板處理裝置之剖面立體圖。
FIG. 1 is a front cross-sectional view of the main part of the
基板處理裝置100係將具有可撓性之片狀之光罩M之圖案相對於帶狀之基板(例如,帶狀之膜構件)S進行曝光處理者,且以照明部10、光罩保持部20、壓印滾筒體(基板保持部、環繞保持部)30、及控制部CONT作為主體而構成。再者,於本實施形態中,將鉛垂方向設為Z方向,將與光罩保持部20及基板保持部30之旋轉軸線平行之方向設為Y方向,將與Z方向及Y方向正交之方向設為X方向而進行說明。
The
照明部10係朝向捲繞於光罩保持部20上之光罩M之照明區域照射照明光者,可使用與螢光燈同樣地以直管型且呈放射狀發出曝光用之照明光者、或自圓筒狀之石英棒之兩端導入照明光且於背面側設置有擴散構件者,並將其收容於支承光罩保持部20之內筒21之內部空間內。
The illuminating
光罩保持部20具備:圓筒狀之保持部本體22、分別設置於保持部本體22之長度方向兩端部之保持具23、及透過板彈簧(伸縮吸收部)24而安裝於各保持具23上之轉動體(間距形成部)25。該等保持部本體22、保持具23、板彈簧24、轉動體25係呈一體化之狀態而設置,又,分別形成有於旋轉軸線AX1
方向連通而供內筒21插通之貫通孔。
The
內筒21係由可使照明光透過之圓筒狀之石英等、或者具備供來自照明部10之照明光通過之狹縫狀之開口部21a的圓筒狀之陶瓷材料或金屬等形成。保持部本體22於其外周面形成有沿著既定半徑之圓筒面保持光罩M之光罩保持面22a。保持具23係由金屬材料形成為圓環狀,如圖3所示,藉由硬化後表現彈性接著性能之接著劑23a與保持部本體22之端部外周面接著。作為保持具23之形成材料,較佳為具有與保持部本體22相同之線膨脹係數者,但於線膨脹係數存在差之情形時,設為線膨脹係數較大之保持具23自外周側保持保持部本體22之構成,以便不因保持部本體22與保持具23之熱膨脹之差而對保持部本體22施加較大之負載。
The
轉動體25於外周側具有繞旋轉軸線AX1突設之壓印滾筒設置部25a,藉由使該壓印滾筒設置部25a與壓印滾筒體30之外周面接觸(摩擦係合),從而轉動體25繞軸線AX1轉動。
The rotating
壓印滾筒設置部25a之外徑形成為較保持於保持部本體22之光罩保持面22a上之光罩M之外側之面所構成之外徑大既定量。具體而言,壓印滾筒設置部25a之外徑係形成為如下之值,即,於壓印滾筒設置部25a抵接於壓印滾筒體30之外周面時,在保持於壓印滾筒體30上之基板S與光罩M之間如圖3所示般形成既定量之間距G。
The outer diameter of the impression
又,轉動體25係於內周側透過空氣軸承(air bearing)26相對於內筒21繞旋轉軸線AX1以非接觸之方式旋轉自如地受到支承。因此,保持部本體22、保持具23、板彈簧24、轉動體25繞旋轉軸線AX1一體地旋轉。
In addition, the rotating
板彈簧24係吸收保持部本體22之旋轉軸線AX1之伸縮者,如圖4所示,以例如鋼材形成為環狀(圓環狀)。如圖3所示,板彈簧24係透過間隔件(spacer)24A於Y方向留出既定量之間隙而固定於轉動體25上。同樣地,板彈
簧24係透過間隔件24B於Y方向留出既定量之間隙而固定於保持具23上。間隔件24A係於距旋轉軸線AX1之距離大致相同之位置上,繞旋轉軸線AX1以等間隔設置有3個。間隔件24B係於距旋轉軸線AX1之距離大於間隔件24A之位置上,以繞旋轉軸線AX1之位置處於間隔件24A之間之方式以等間隔設置有3個。
The
因此,透過板彈簧24而連結之保持具23(保持部本體22)與轉動體25成為如下構成:於繞旋轉軸線AX1之方向以較高之剛性結合而一體地旋轉,於旋轉軸線AX1方向,由於板彈簧24容易彈性變形,故而成為較低之剛性之結合而可相對移動(微動)。
Therefore, the holder 23 (holding portion main body 22) and the
內筒21係透過板彈簧28而載置於自於Y方向留出間隔而設置之基座部B向互相接近之方向延伸設置之支承台27上。板彈簧28之彈簧常數係根據光罩保持部20之自重及透過轉動體25對壓印滾筒體30施加之負載、即轉動體25之壓印滾筒設置部25a於壓印滾筒體30之外周面上轉動時之摩擦力而設定。於內筒21之內部空間配設有上述照明部10,於在照明部10之照明光出射方向對向之位置上形成有於Y方向細長之狹縫狀之開口部21a,以便使照明光通過(參照圖1及圖2)。
The
壓印滾筒體30係形成為繞與Y軸平行且設定於旋轉軸線AX1之-Z側之旋轉軸線AX2旋轉(環繞)之圓柱狀,如圖2所示,於內部設置有中空部30a且以慣性力矩變小之方式設定。壓印滾筒體30之外周面設為接觸保持基板S之基板保持面31。該保持面31較佳為經鏡面研磨之金屬表面,但為了提高與基板S之摩擦力而抑制滑動,亦可為使厚度均均之較薄之橡膠片材、樹脂片材等被覆於全周而成者。
The
於壓印滾筒體30之Y方向兩端面上,直徑較壓印滾筒體30小且以同軸突出之旋轉支承部32繞旋轉軸線AX2旋轉自如地支承於基座部B。又,於本實施形態中,設置有藉由旋轉驅動壓印滾筒體30而使壓印滾筒體30與光罩保持部20同步
地旋轉之驅動裝置33。
On both end surfaces of the
基板S係以具有可撓性之方式形成。此處,所謂可撓性係指即使對基板施加自重程度之力亦不會斷線或破斷,而可使該基板撓曲之性質。又,藉由自重程度之力而彎曲之性質亦包含於可撓性。又,上述可撓性根據該基板之材質、大小、厚度、或者溫度或濕度等環境等而改變。再者,作為基板S,既可使用1片帶狀之基板,亦可設為將複數片單位基板連接而形成為帶狀之構成。 The substrate S is formed in a flexible manner. Here, the so-called flexibility refers to the property of allowing the substrate to bend without breaking or breaking even if a force of the degree of its own weight is applied to the substrate. In addition, the property of bending by the force of its own weight is also included in flexibility. In addition, the above-mentioned flexibility varies according to the material, size, thickness, or environment such as temperature or humidity of the substrate. In addition, as the substrate S, one strip-shaped substrate may be used, or a plurality of unit substrates may be connected to form a strip-shaped structure.
作為基板S,例如可使用樹脂膜或不鏽鋼等箔(foil)。例如,樹脂膜可使用聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、醋酸乙烯酯樹脂等材料。基板S較佳為熱膨脹係數較小者以確保即使受到例如200℃左右之熱尺寸亦不會改變。例如,可將無機填料混合於樹脂膜中而減小熱膨脹係數。作為無機填料之例,可列舉氧化鈦、氧化鋅、氧化鋁、氧化矽等。基板S之寬度方向(短邊方向)之尺寸係形成為例如1m~2m左右,長度方向(長邊方向)之尺寸係形成為例如10m以上。當然,該尺寸僅為一例,並不限定於此。例如基板S之Y方向之尺寸亦可為1m以下或50cm以下,或亦可為2m以上。又,基板S之X方向之尺寸亦可為10m以下。 As the substrate S, for example, a resin film or foil such as stainless steel can be used. For example, the resin film may use polyethylene resin, polypropylene resin, polyester resin, ethylene ethylene copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, poly Styrene resin, vinyl acetate resin and other materials. The substrate S preferably has a smaller thermal expansion coefficient to ensure that the size will not change even if it receives heat at about 200°C. For example, an inorganic filler can be mixed in the resin film to reduce the thermal expansion coefficient. Examples of inorganic fillers include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide. The size of the width direction (short side direction) of the substrate S is formed to be, for example, about 1 m to 2 m, and the size of the length direction (long side direction) is formed to be, for example, 10 m or more. Of course, this size is only an example, and is not limited to this. For example, the dimension in the Y direction of the substrate S may be 1 m or less or 50 cm or less, or may be 2 m or more. Moreover, the dimension of the X direction of the board|substrate S may be 10m or less.
其次,對上述構成之基板處理裝置100之動作進行說明。
Next, the operation of the
透過空氣軸承26而由內筒21支承、且保持光罩M之光罩保持部20於透過轉動體25之壓印滾筒設置部25a對壓印滾筒體30賦予該光罩保持部20之自重與同板彈簧28之彈簧常數相應之朝向+Z側(上方)之賦能力之差量之負載的狀態下抵接。藉此,在光罩保持面22a與基板保持面31之間、即光罩M與基板S之間,形成與壓印滾筒設置部25a之外徑相應之既定量之間距。再者,於調整壓印滾筒設置部25a對壓印滾筒體30賦予之負載時,只要更換為具有對應之彈簧常數之板彈簧28,或於在內筒21與支承台27之間預先插入有間隔件之狀態下設置板彈簧28而
更換為與壓印滾筒設置部25a對壓印滾筒體30賦予之負載相應之間隔件即可。
The
其次,壓印滾筒體30藉由驅動裝置33之驅動而繞旋轉軸線AX2旋轉,並且自照明部10照射照明光,透過開口部21a透過保持部本體22,而自內周側對光罩M進行照明。伴隨著壓印滾筒體30之旋轉,捲繞於壓印滾筒體30之基板保持面31上而保持之基板S以既定之速度被搬送,並且帶動透過壓印滾筒設置部25a而抵接於壓印滾筒體30之外周面之轉動體25旋轉。藉此,保持於光罩保持部20上之光罩M與基板S以維持為既定量之近接式間距(proximity gap)G之狀態同步地移動。其次,由照明光照明之光罩M之圖案影像被逐次投影至基板S之投影區域。
Next, the
此時,為了使壓印滾筒設置部25a與基板保持面31抵接之位置(直徑)上周邊速度變得相同,且為了儘量使光罩M與基板S之相對移動速度一致,光罩保持部20及壓印滾筒體30係根據光罩M之外周面之位置(直徑)及基板S之外周面之位置(直徑)、光罩M之厚度Mt及基板S之厚度St、保持部本體22之光罩保持面22a上之半徑r11、壓印滾筒體30之基板保持面31上之半徑r2之比等而進行調整。
At this time, in order to make the peripheral speed at the position (diameter) where the impression
因此,必須不使壓印滾筒體30之基板保持面31中壓印滾筒設置部25a之外周面所抵接之部分之半徑與保持基板S之部分之半徑如圖3所示般相同,而有意地使其等不同。具體而言,將壓印滾筒設置部25a之外周面與壓印滾筒體30之外周面抵接之Z方向之位置(直徑)設定於光罩M之外周面與基板S之外周面之間之間距G之中間周邊。因此,只要使與壓印滾筒設置部25a之外周面抵接之壓印滾筒體30之外周面部分之半徑相對於半徑r2增大St+G/2左右即可。因此,例如,於基板S之厚度St為200μm、間距G為100μm之情形時,與壓印滾筒設置部25a之外周面抵接之壓印滾筒體30之外周面部分之半徑只要相對於半徑r2增大約250μm即可。
Therefore, it is necessary not to make the radius of the portion of the
若連續地進行上述曝光處理,則由照明光照明之保持部本體22中可能產生熱膨脹。關於保持部本體22之直徑方向(周向)之熱膨脹,藉由使自外周側保持保持部本體22之保持具23由金屬材料形成且使線膨脹係數大於保持部本體22之線膨脹係數,而不約束保持部本體22,故而可避免對保持部本體22賦予過剩之應力。又,此時,雖然保持部本體22與保持具23沿著分離之方向熱膨脹,但由於接著劑23a具備彈性接著性能,故而亦可防止保持具23對保持部本體22之保持鬆弛。
If the above-mentioned exposure treatment is continuously performed, thermal expansion may occur in the holder
再者,於保持具23之線膨脹係數小於保持部本體22之線膨脹係數之情形時,較佳為採用保持具23自內周側保持保持部本體22之構成,但即使為自外周側進行保持之構成,亦可藉由上述接著劑23a產生彈性變形,而緩和於熱膨脹時對保持部本體22施加之應力。
Furthermore, when the linear expansion coefficient of the
又,對於保持部本體22之旋轉軸線AX1方向之熱膨脹,板彈簧24以藉由間隔件24A而固定之部位為基點,使藉由間隔件24B而固定之部位沿著朝向轉動體25之方向彈性變形。如此,保持部本體22之熱膨脹作為板彈簧24之彈性變形而被吸收,故而可避免於保持部本體22產生旋轉軸線AX1方向之較大之應力。
In addition, with respect to the thermal expansion in the direction of the rotation axis AX1 of the
如以上所說明般,於本實施形態中,藉由使於壓印滾筒設置部25a抵接於壓印滾筒體30之外周面之轉動體25與壓印滾筒體30帶動旋轉,而可於光罩M與基板S維持著既定量之間距之狀態下實施曝光處理。因此,於本實施形態中,可防止因光罩M與基板S之間之間距量之變動而導致產生之圖案之像寬變動等。間距G之值可根據應曝光於基板S上之圖案(光罩M上之圖案)之最小尺寸、或來自照明部10之照明光之角度特性(開口數)等,而改變良好之範圍,但為數十μm~數百μm程度之範圍。
As described above, in the present embodiment, the rotating
又,於本實施形態中,於直徑方向,使具備彈性接著性能之接著
劑23a介於保持部本體22與保持具23之間,於旋轉軸線AX1方向,藉由板彈簧24產生彈性變形,而緩和伴隨著熱膨脹於保持部本體22中產生之應力,故而可減少該應力所導致之保持部本體22之變形,抑制對向基板S之圖案形成造成不良影響之情況(轉印忠實度之劣化等)。
Moreover, in this embodiment, in the diameter direction, the adhesive with elastic adhesive performance
The
於本實施形態之情形時,轉動體25係由金屬材料構成,但若其自身之材料之熱膨脹亦較大,則壓印滾筒設置部25a之直徑(全周長)會產生變化,故而較佳為設定為低熱膨脹金屬(鎳鋼等)、或設定為低熱膨脹率之陶瓷材料。
In the case of this embodiment, the rotating
(第2實施形態) (Second Embodiment)
其次,參照圖5及圖6,對基板處理裝置100之第2實施形態進行說明。於上述第1實施形態中,作為於光罩保持面22a與基板保持面31之間形成間距之間距形成部,例示有具備壓印滾筒設置部25a之轉動體25,但於本實施形態中,對設置調整光罩保持部20相對於壓印滾筒體30之位置之驅動裝置之情形進行說明。又,於本實施形態中,設為將旋轉軸線AX1、AX2配置於同一XY平面上(光罩保持部20與壓印滾筒體30沿水平方向排列而配置)而進行說明。
Next, referring to FIGS. 5 and 6, a second embodiment of the
於該等圖中,對與圖1至圖4所示之第1實施形態之構成要素相同之要素標註相同符號,而省略其說明。 In these drawings, the same elements as those of the first embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and the description thereof will be omitted.
圖5係光罩保持部20之放大剖面圖。
FIG. 5 is an enlarged cross-sectional view of the
光罩保持部20具備:保持部本體22;保持具23A,其具有以旋轉軸線AX1為軸線之貫通孔且透過接著劑23a自+Y側之端部內周側保持保持部本體22;保持具23B,其具有以旋轉軸線AX1為軸線之旋轉軸34且透過接著劑23a自-Y側之端部內周側保持保持部本體22;及終端筒36,其具有以旋轉軸線AX1為軸線之貫通孔,且透過空氣軸承35自外周側繞旋轉軸線AX1旋轉自如地支承保持具23A。光罩保持部20係藉由連接於旋轉軸34之驅動裝置MT而與壓印滾筒體30獨立地旋轉驅動。
The
於保持部本體22之內部空間內,透過終端筒36及保持具23A之貫通孔而插入有沿Y方向延伸之固定桿37,且一端部藉由固定板38而固定於終端筒36上。成為如下構成:於固定桿37上支承上述照明部10,並且自構成溫度調整裝置之供給部39A供給溫度調整用介質,且自排出部39B排出,藉此使溫度調整用介質循環,從而有效率地抑制照明部10之溫度上升,並且調整保持部本體22之內部空間之溫度。
In the internal space of the
又,於本實施形態之基板處理裝置100中,作為間距形成部而設置有:測量部40,其測量光罩保持面22a與基板保持面31之間之間距量;及移位部41,其根據測量部40之測量結果使光罩保持部20向保持部本體22與壓印滾筒體30分離、接近之方向移位。
In addition, in the
測量部40係由支承於固定桿37上之帶顯微鏡之CCD相機或光學焦距(高度測量)感測器等構成,藉由對壓印滾筒體30之基板保持面31上之與保持部本體22對向之位置(此處為X方向之位置)進行測距,而測量光罩保持面22a與基板保持面31之間之間距量,所測量出之間距量係輸出至控制部CONT。
The measuring
移位部41係由驅動部44、驅動部47、及獨立地驅動驅動部44、47之上述控制部CONT構成,其中驅動部44透過空氣軸承42保持旋轉軸34,並且沿著於X方向延伸設置之導軌43於X方向驅動保持具23A;驅動部47保持終端筒36,並且沿著於X方向延伸設置之導軌46於X方向驅動終端筒36。
The
如圖6所示,於較曝光區域更靠基板S之搬送方向之上游側,設置有複數個測量部50,該等測量部50具有與測量部40相同之構成,測量基板S之對準標記(alignment mark)(未圖示)。本實施形態中之測量部50係於基板S之搬送方向留出間隔而配設於3個部位,且於各部位於基板S之寬度方向留出間隔而配設有3個(參照圖7),並將測量結果輸出至控制部CONT。
As shown in FIG. 6, a plurality of measuring
於上述構成之基板處理裝置100中,根據測量部40所測量出之光
罩保持面22a與基板保持面31之間之間距量,控制部CONT控制驅動部44、47之驅動而設為相同驅動量,藉此使光罩保持部20向相對於壓印滾筒體30分離、接近之方向移動而調整上述間距量。又,控制部CONT亦可藉由使驅動部44、47之驅動量不同,而對旋轉軸線AX1與旋轉軸線AX2之相對之傾斜進行微調。
In the
又,根據利用測量部50所測量出之基板S之對準標記位置,控制部CONT預先測量曝光處理前之基板S上之曝光區域之面變形等,並將其反映於上述間距量調整、或旋轉軸線AX1與旋轉軸線AX2之相對傾斜調整上。
Furthermore, based on the alignment mark position of the substrate S measured by the measuring
如此,於本實施形態中,除了可獲得與上述第1實施形態相同之作用、效果以外,藉由使光罩保持部20移動,還可將光罩保持面22a與基板保持面31之間之間距量調整為任意之值。因此,於本實施形態中,即使於因溫度變化等環境變化而導致旋轉軸線AX1與旋轉軸線AX2之軸間距離產生變化、或者保持部本體22或壓印滾筒體30之直徑產生變動之情形時,抑或於光罩M、基板S之厚度因製造批次等而產生變動之情形等時,亦可容易地將光罩保持面22a與基板保持面31之間之間距量調整為既定量,從而可將光罩M之圖案以高精度曝光於基板S。
In this way, in this embodiment, in addition to the same functions and effects as the first embodiment described above, by moving the
(第3實施形態) (Third Embodiment)
其次,參照圖7及圖8,對基板處理裝置100之第3實施形態進行說明。於上述第2實施形態中,設為如下構成:控制驅動部44、47之驅動而使光罩保持部20移動,藉此調整光罩保持面22a與基板保持面31之間之間距量、即光罩M之外周面與基板S之外周面之間距G,但於本實施形態中,對在光罩保持部20與壓印滾筒體30之間設置襯墊部,藉由調整襯墊部之位置,而調整光罩保持面22a與基板保持面31之間之間距量之例進行說明。
Next, referring to FIGS. 7 and 8, a third embodiment of the
於該等圖中,對與圖5及圖6所示之第2實施形態之構成要素相同之要素標註相同符號,而省略其說明。 In these drawings, the same elements as those of the second embodiment shown in FIGS. 5 and 6 are denoted by the same reference numerals, and the description thereof will be omitted.
圖7所示之保持部本體22之設置於+Y側之端部之終端筒36支承於支承構件51A上。支承構件51A係以非接觸之方式移動自如地支承於在X方向延伸而設置於基座部B上之導引部52A上。又,支承構件51A藉由設置於+X側之空氣缸(air cylinder)(賦能部)53A以既定之賦能力向-X側賦能而被加壓。同樣地,保持部本體22之-Y側之旋轉軸34透過空氣軸承42而支承於支承構件51B上。支承構件51B以非接觸之方式移動自如地支承於在X方向延伸而設置於基座部B上之導引部52B上。又,支承構件51B藉由設置於+X側之空氣缸(賦能部)53B以既定之賦能力向-X側賦能而被加壓。
The
基座部B係於Y方向留出間隔而設置,於較支承導引部52A、52B之區域更靠-X側具備較導引部52A、52B更向+Z側突出且支承壓印滾筒體30之支承壁54。於各支承構件51A、51B與支承壁54之間形成有於Z方向延伸之槽部55。
The base part B is provided with an interval in the Y direction, and is located closer to the -X side than the area supporting the
如圖8所示,槽部55之X方向之寬度係以隨著朝向+Z方向而逐漸變大之方式,且以相對於YZ面具有略微之錐度之方式形成。更詳細而言,支承壁54之+X側之側面(形成槽部55之-X側之側面)係與YZ平面平行地形成,支承構件51A、51B之-X側之側面(形成槽部55之+X側之側面)係以隨著朝向+Z方向距支承壁54之+X側之側面之距離逐漸變大之方式相對於與YZ平面平行之面傾斜而形成。於該槽部55中,沿著Z方向移動自如地插入有襯墊部56。
As shown in FIG. 8, the width of the
如圖7所示,連接於旋轉軸34、且透過該旋轉軸34使光罩保持部20(即光罩M)旋轉之驅動裝置(第1調整部)MT係設置於可於Y方向移動之位移平台(第2調整部)48上。控制部CONT可藉由控制位移平台48之移動,而使光罩保持部20、光罩M及驅動裝置MT一體地沿Y方向移動。
As shown in FIG. 7, the driving device (first adjusting portion) MT connected to the
於上述構成之基板處理裝置100中,藉由空氣缸53A、53B向-X方向被加壓之支承構件51A、51B之傾斜(錐形)面抵接於插入至槽部55中之襯墊部56而使移動受到限制,藉此規定支承構件51A、51B之X方向之位置。支承
構件51A、51B之傾斜面抵接於襯墊部56之位置因襯墊部56之Z方向之位置而變動。因此,藉由調整襯墊部56之Z方向之位置,而可規定限制支承構件51A、51B之移動而定位之X方向之位置。
In the
即,於本實施形態中,藉由調整襯墊部56之Z方向之位置,而可調整支承於支承構件51A、51B上之光罩保持部20及光罩M之X方向之位置,結果可調整光罩保持面22a與基板保持面31之間之間距量(光罩M與基板S之間距G)。又,亦可藉由使限制支承構件51A、51B之移動之襯墊部56之Z方向之位置在支承構件51A與支承構件51B之間不同,而於與XY平面平行之面內微小地調整光罩保持部20之旋轉軸線AX1相對於Y軸之傾斜。
That is, in this embodiment, by adjusting the position of the
再者,亦可設為如下構成:本實施形態中之襯墊部56向Z方向之移動係例如於控制部CONT之控制下,根據測量部50之測量結果,利用馬達等驅動裝置而進行。
In addition, a configuration may be adopted in which the movement of the
另一方面,根據利用測量部(檢測部)50測量出之基板S之對準標記位置,控制部CONT根據光罩M與基板S之繞旋轉軸線AX1之方向(周向)之相對位置關係控制驅動裝置MT之旋轉動作,而進行光罩M與基板S之繞旋轉軸線AX之方向(周向)之位置對準。又,控制部CONT根據所測量出之光罩M與基板S之旋轉軸線AX1方向(Y方向)之相對位置關係,透過位移平台48使光罩保持部20、光罩M及驅動裝置MT一體地沿Y方向(旋轉軸線AX1方向)移動,藉此進行光罩M與基板S之旋轉軸線AX1方向之位置對準。
On the other hand, based on the alignment mark position of the substrate S measured by the measurement unit (detection unit) 50, the control unit CONT controls the relative positional relationship between the mask M and the substrate S in the direction (circumferential direction) around the rotation axis AX1 The driving device MT rotates to perform position alignment of the mask M and the substrate S in the direction (circumferential direction) around the rotation axis AX. In addition, the control unit CONT integrates the
如此,於本實施形態中,除了上述光罩M與基板S之間距量以外,亦可容易地調整繞旋轉軸線AX1之方向之相對位置、及旋轉軸線AX1方向之相對位置。 In this way, in this embodiment, in addition to the distance between the mask M and the substrate S, the relative position in the direction around the rotation axis AX1 and the relative position in the direction of the rotation axis AX1 can also be easily adjusted.
再者,於調整光罩M與基板S之繞旋轉軸線AX1、AX2之方向(周向)之相對位置時,除了控制驅動裝置MT之驅動之方法以外,例如,亦可設為如下構成:
於構成光罩保持部20之保持部本體22或旋轉軸34等旋轉部分與支承構件51A、51B等固定部分之間設置電磁制動器(發電制動器)等,藉由電磁制動器之作動、作動停止對保持部本體22之旋轉力暫時賦予負載,而使旋轉力矩降低,藉此相對於基板S調整光罩M之繞旋轉軸線AX1之方向之相對位置(角度位置)。
Furthermore, when adjusting the relative position of the photomask M and the substrate S in the directions (circumferential direction) around the rotation axes AX1 and AX2, in addition to the method of controlling the driving of the driving device MT, for example, the following configuration may also be adopted:
An electromagnetic brake (generator brake) or the like is provided between the holding part
(第4實施形態) (Fourth Embodiment)
其次,參照圖9至圖11,對基板處理裝置100之第4實施形態進行說明。於上述第1實施形態中,設為如下構成:藉由轉動體25之壓印滾筒設置部25a抵接於壓印滾筒體30,而在光罩保持面22a與基板保持面31之間、即光罩M與基板S之間形成既定量之間距,但於本實施形態中,對根據基板S之厚度St適當地維持間距量G並且使光罩M與基板S之周邊速度一致之構成進行說明。
Next, referring to FIGS. 9 to 11, a fourth embodiment of the
於該等圖中,對與圖1至圖4所示之第1實施形態之構成要素相同之要素標註相同符號,而省略其說明。 In these drawings, the same elements as those of the first embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and the description thereof will be omitted.
如圖9所示,本實施形態之整體構成與上文之圖1相同,但於本實施形態中,於在壓印滾筒體30之Y方向之兩側之外周面、或轉動體25之壓印滾筒設置部25a之外周面上呈環狀設置有既定厚度之填隙片(修正部)SM1、SM2之方面不同。
As shown in Fig. 9, the overall structure of this embodiment is the same as that of Fig. 1, but in this embodiment, the outer peripheral surface of the
如上文之圖3所示,若將轉動體25之壓印滾筒設置部25a之半徑設為r1,將壓印滾筒體30之基板保持面31之半徑設為r2,將光罩保持面22a之半徑設為r11,將光罩M之厚度設為Mt,將基板S之厚度設為St,將光罩M與基板S之既定之間距量設為G,則旋轉軸線AX1與旋轉軸線AX2之軸間距離DX由以下式(1)表示。
As shown in Figure 3 above, if the radius of the impression
DX=r11+Mt+G+St+r2...(1) DX=r11+Mt+G+St+r2. . . (1)
因此,於壓印滾筒設置部25a在壓印滾筒體30之基板保持面31上轉動之情形時,壓印滾筒設置部25a之半徑r1可由下式(2)求出。
Therefore, when the impression
r1=DX-r2...(2) r1=DX-r2. . . (2)
因此,若決定光罩M、基板S及間距G之值,則壓印滾筒設置部25a之半徑r1可使用具有根據上述式(1)、(2)所求出之值者。
Therefore, if the values of the photomask M, the substrate S, and the pitch G are determined, the radius r1 of the impression
然而,例如關於基板S,存在因批次不同等而導致使用不同厚度者之情形。該情況不僅存在於基板S,對於光罩M亦同樣可能發生。 However, for the substrate S, for example, there are cases where different thicknesses are used due to different batches. This situation not only exists in the substrate S, but may also occur in the mask M as well.
因此,於本實施形態中,成為如下構成:於轉動體25之壓印滾筒設置部25a與壓印滾筒體30之抵接部設置填隙片作為修正基板S或光罩M等之厚度之變化的修正部。
Therefore, in this embodiment, the configuration is as follows: a shim is provided at the contact portion between the impression
即,如圖9所示,於壓印滾筒設置部25a之外周面上裝卸自如地設置有填隙片(修正部)SM1。又,於壓印滾筒體30之外周面上之與壓印滾筒設置部25a對向之位置上,裝卸自如地設置有填隙片(修正部)SM2。作為將填隙片SM1設為相對於壓印滾筒設置部25a之外周面裝卸自如之方法,可採用使填隙片SM1具備磁性部、使光罩保持部20(壓印滾筒設置部25a)具備激磁部之構成。
That is, as shown in FIG. 9, the shim (correction part) SM1 is detachably installed on the outer peripheral surface of the impression
具體而言,可採用由磁性材料形成填隙片SM1之構成、於填隙片SM1之整個面或一部分形成包含磁性粉體等磁性材料之層之構成,且可採用由磁鐵形成壓印滾筒設置部25a之外周面之構成、於壓印滾筒設置部25a之外周面埋設磁鐵之構成。作為磁鐵,可配設永久磁鐵或電磁鐵。
Specifically, a configuration in which the shim SM1 is formed of a magnetic material, a layer containing a magnetic material such as magnetic powder is formed on the entire surface or a part of the shim SM1, and an imprint roller made of a magnet can be used. The structure of the outer peripheral surface of the
作為將填隙片SM2設為相對於壓印滾筒體30之外周面裝卸自如之方法,可與填隙片SM1同樣地採用使填隙片SM2具備磁性部、使壓印滾筒體30具備激磁部之構成。
As a method for making the shim SM2 freely attachable to and detachable from the outer peripheral surface of the
填隙片SM1係遍及壓印滾筒設置部25a之外周面之大致全周而設置。同樣地,填隙片SM2係遍及壓印滾筒體30(基板保持面31)之外周面之大致全周而設置。更詳細而言,填隙片SM1於捲繞在壓印滾筒設置部25a之外周面上時,具有於連接部形成間隙之長度,以便不使繞旋轉軸線AX1之方向之端部彼此重合而於直徑方向形成突部。而且,如圖10A所示,填隙片SM1之周長方向
之兩端部係以沿相對於旋轉軸線AX1傾斜地交叉之方向延伸之間隙以固定寬度形成之方式,分別沿相同角度之傾斜方向形成。
The shimming sheet SM1 is provided over substantially the entire circumference of the outer peripheral surface of the impression
藉由該構成,即使於光罩保持部20及壓印滾筒體30旋轉而與壓印滾筒體30之接觸範圍Ta移動之情形時,填隙片SM1之一部分亦始終存在於接觸範圍Ta內,從而防止因間隙之階差而導致於光罩保持部20與壓印滾筒體30之帶動旋轉時產生間距量之變動或振動等。再者,形成該間隙之端部之構成對於填隙片SM2亦相同。
With this configuration, even when the
如上所述,為了保持圖11所示之光罩M與基板S之間距量G,填隙片SM1、SM2之厚度係根據基板S或光罩M之厚度而分別設定。於該情形時,壓印滾筒設置部25a之半徑r1係以可設置填隙片SM1、SM2之方式,設定得較距壓印滾筒體30之外周面之距離小。
As described above, in order to maintain the distance G between the mask M and the substrate S shown in FIG. 11, the thickness of the shim SM1, SM2 is set according to the thickness of the substrate S or the mask M, respectively. In this case, the radius r1 of the impression
因此,若將填隙片SM1、SM2之厚度分別設為t1、t2,則旋轉軸線AX1與旋轉軸線AX2之軸間距離DX由以下式(3)表示。 Therefore, assuming that the thicknesses of the shims SM1 and SM2 are respectively t1 and t2, the inter-axial distance DX between the rotation axis AX1 and the rotation axis AX2 is expressed by the following formula (3).
DX=r1+r2+t1+t2=r11+Mt+G+St+r2...(3) DX=r1+r2+t1+t2=r11+Mt+G+St+r2. . . (3)
根據式(3),填隙片SM1、SM2之厚度之合計由以下式(4)表示。 According to the formula (3), the total thickness of the shims SM1 and SM2 is expressed by the following formula (4).
t1+t2=r11+Mt+G+St-r1...(4) t1+t2=r11+Mt+G+St-r1. . . (4)
而且,例如,於基板S之厚度St變為(St+α)之情形時,藉由將填隙片SM1、SM2之厚度之合計設為t1+t2+α,則即使於基板S之厚度產生變化之情形時亦可使間距量G保持固定。 Furthermore, for example, when the thickness St of the substrate S becomes (St+α), by setting the total thickness of the shim SM1 and SM2 as t1+t2+α, even if the thickness of the substrate S The gap amount G can also be kept constant when changing the situation.
然而,光罩保持部20及壓印滾筒體30之周邊速度於填隙片SM1、SM2之抵接面tf上之位置(距旋轉軸線AX1、AX2之距離)相同,位於自該位置分離之位置上之光罩M之表面(以下稱為光罩面)之周邊速度、基板S之表面(以下稱為基板面)之周邊速度係根據各面距旋轉軸線AX1、AX2之距離而變化。因此,各填隙片SM1、SM2之厚度必須以光罩面及基板面之相對周邊速度相同之方
式分別設定。
However, the peripheral speeds of the
例如,將產生有變化之基板S之厚度設為St'(=St+α),將與基板S之厚度St'相對應之填隙片SM1、SM2之厚度分別設為T1、T2,將光罩保持部20之角速度設為ω1,將壓印滾筒體30之角速度設為ω2,如上文中參考圖3所說明般,於設為抵接面tf之位置位於光罩M之外周面與基板S之外周面之間、即間距G之大致中間之情形時,抵接面tf上之周邊速度相同,故而以下之式(5)成立。
For example, the thickness of the substrate S that has changed is set to St'(=St+α), and the thicknesses of the shim SM1 and SM2 corresponding to the thickness St' of the substrate S are set to T1, T2, and the light The angular velocity of the
(r1+T1).ω1=(r2+T2).ω2...(5) (r1+T1). ω1=(r2+T2). ω2. . . (5)
又,由於將光罩面之周邊速度與基板面之周邊速度設為相同,故而以下之式(6)成立。 In addition, since the peripheral speed of the mask surface and the peripheral speed of the substrate surface are set to be the same, the following equation (6) holds.
(r11+Mt).ω1=(r2+St').ω2...(6) (r11+Mt). ω1=(r2+St'). ω2. . . (6)
若對上述式(5)、(6)進行整理,則導出以下之式(7)。 If the above formulas (5) and (6) are organized, the following formula (7) is derived.
(r2+T2)/(r1+T1)=(r2+St')/(r11+Mt)...(7) (r2+T2)/(r1+T1)=(r2+St')/(r11+Mt). . . (7)
進而,根據式(4),以下之式(8)成立。 Furthermore, according to the formula (4), the following formula (8) holds.
T1+T2=r11+Mt+G+St'-r1...(8) T1+T2=r11+Mt+G+St'-r1. . . (8)
因此,於本實施形態中,藉由使用滿足式(7)、(8)之厚度T1、T2之填隙片SM1、SM2,即使於基板S之厚度產生變化之情形時,亦可一面保持光罩M之外周面與基板S之外周面之間距量,一面以光罩M之外周面與基板S之外周面之周邊速度相同之方式進行修正。又,於本實施形態中,由於填隙片SM1、SM2分別磁附於壓印滾筒設置部25a、壓印滾筒體30上,故而可結合基板S、或光罩M等之厚度變化而容易地進行更換,從而可謀求作業效率之提高。進而,於本實施形態中,由於填隙片SM1、SM2之端部間之間隙於與旋轉軸線AX1、AX2方向交叉之方向延伸,故而可防止於轉動時產生因階差而導致之間距變動或振動,從而可實施高精度之曝光處理。
Therefore, in this embodiment, by using the shims SM1 and SM2 with the thicknesses T1 and T2 satisfying the formulas (7) and (8), even when the thickness of the substrate S changes, the light can be kept on one side. The distance between the outer peripheral surface of the mask M and the outer peripheral surface of the substrate S is corrected in such a way that the peripheral speeds of the outer peripheral surface of the mask M and the outer peripheral surface of the substrate S are the same. In addition, in this embodiment, since the shim pieces SM1 and SM2 are magnetically attached to the impression
再者,例示了沿傾斜方向形成上述第4實施形態中之填隙片 SM1、SM2之端部之構成,但並不限定於此,只要端部間之間隙之至少一部分係沿著與旋轉軸線AX1、AX2方向交叉之方向形成即可,例如,如圖10B所示,亦可形成為如沿旋轉軸線AX1、AX2方向之間隙、及沿與旋轉軸線AX1、AX2方向正交之方向之間隙交替重複之階梯狀。 Furthermore, the shim in the fourth embodiment described above is formed in an oblique direction. The structure of the ends of SM1 and SM2 is not limited to this, as long as at least a part of the gap between the ends is formed in a direction intersecting the direction of the rotation axis AX1 and AX2, for example, as shown in FIG. 10B, It may also be formed in a stepped shape in which the gap along the direction of the rotation axis AX1 and AX2 and the gap along the direction orthogonal to the rotation axis AX1 and AX2 alternately repeat.
又,即使於端部間之間隙係沿著旋轉軸線AX1、AX2方向而形成之情形時,如圖10C所示,亦可為如下構成:以間隙之位置於繞旋轉軸線AX1、AX2之方向不同之方式,於旋轉軸線AX1、AX2方向配置複數個填隙片。 Moreover, even when the gap between the ends is formed along the direction of the rotation axis AX1 and AX2, as shown in FIG. 10C, it may be configured as follows: the position of the gap is different from the direction around the rotation axis AX1 and AX2 In this way, a plurality of shims are arranged in the direction of the rotation axis AX1 and AX2.
又,於上述實施形態中,使用以光罩面與基板面之相對周邊速度相同之方式設定填隙片SM1、SM2之厚度之例進行了說明,但例如,只要基板S之厚度變化為容許範圍內,則亦可設為使填隙片SM1、SM2之任一者之厚度固定,僅另一填隙片之厚度於填隙片更換時對應之構成。又,於基板S或光罩M之厚度未產生較大之變化之情形時,亦可設為於初始調整時之間距調整中藉由接著劑固定所需厚度之填隙片之構成。 In addition, in the above-mentioned embodiment, the description has been made using an example in which the thickness of the shims SM1 and SM2 is set so that the relative peripheral speed of the mask surface and the substrate surface is the same, but for example, as long as the change in the thickness of the substrate S falls within the allowable range Inside, it can also be set to fix the thickness of any one of the shim pieces SM1 and SM2, and only the thickness of the other shim piece corresponds to when the shim piece is replaced. In addition, when the thickness of the substrate S or the photomask M does not change significantly, the gap adjustment during the initial adjustment can also be used to fix the gap filler with the required thickness by the adhesive.
又,例如,於在前步驟中基板S於搬送方向伸縮之情形時,亦可調整填隙片SM1、SM2之厚度分配而有意地對光罩M之外周面與基板S之外周面之相對之周邊速度賦予差,以便修正基板S之伸縮。 In addition, for example, when the substrate S is expanded and contracted in the conveying direction in the previous step, the thickness distribution of the shim SM1 and SM2 can also be adjusted to deliberately oppose the outer peripheral surface of the mask M and the outer peripheral surface of the substrate S. The peripheral speed is given a difference in order to correct the expansion and contraction of the substrate S.
此處,於將圖11中之基板S之厚度St設為100μm,將間距G設為100μm,將包含填隙片SM1之厚度t1之壓印滾筒設置部25a之半徑(r1+t1)與包含填隙片SM2之厚度t2之壓印滾筒體30之半徑(r2+t2)均設為150mm,而且將抵接面tf上之周邊速度V0設為50mm/S之情形時,在抵接面tf位於間距G之中間(1/2)之條件下,光罩M之外周面與基板S之外周面一面保持間距G,一面均變為49.983mm/S之周邊速度,從而相對速度差為零。
Here, the thickness St of the substrate S in FIG. 11 is set to 100 μm, the pitch G is set to 100 μm, and the radius (r1+t1) of the impression
根據將抵接面tf之位置(Z方向)設定於間距G內之何處,會產生周邊速度之略微之相對差,故而可使曝光於基板S上之圖案之周向之尺寸相對於光罩M上 之圖案之周向之尺寸於某個範圍內擴展、收縮。於上述數值例之情形時,若將光罩M上之圖案之周長方向之尺寸設為750mm,則曝光於基板S上之圖案之搬送方向之尺寸最大可伸縮±500μm左右。 Depending on where the position (Z direction) of the abutting surface tf is set within the pitch G, a slight relative difference in the peripheral speed will occur, so the circumferential size of the pattern exposed on the substrate S can be compared to that on the mask M The circumferential size of the pattern expands and contracts within a certain range. In the case of the above numerical example, if the size in the circumferential direction of the pattern on the mask M is set to 750 mm, the size of the pattern exposed on the substrate S in the conveying direction can be expanded and contracted at a maximum of ±500 μm.
此種曝光圖案之伸縮修正亦被稱為掃描曝光方向(基板S之搬送方向)上之相對倍率修正,於對形成於物理性之伸縮較大之樹脂性之基板S上之基底圖案進行準確之重合曝光之情形時,可藉由積極地活用該相對倍率修正,而進行與基底圖案一致之忠實之圖案轉印。 The expansion and contraction correction of this kind of exposure pattern is also referred to as the relative magnification correction in the scanning exposure direction (the conveying direction of the substrate S), which is used to accurately perform the accurate correction of the base pattern formed on the resin substrate S with a large physical expansion and contraction. In the case of overlapping exposure, the relative magnification correction can be actively used to perform a faithful pattern transfer consistent with the base pattern.
(第5實施形態) (Fifth Embodiment)
其次,參照圖12,對基板處理裝置100之第5實施形態進行說明。
Next, referring to FIG. 12, a fifth embodiment of the
於上述第4實施形態中,為藉由調整填隙片SM1、SM2之厚度而應對基板S等之厚度變化之構成,但於本實施形態中,對藉由使轉動體25於直徑方向彈性變形而應對基板S等之厚度變化之構成進行說明。
In the above-mentioned fourth embodiment, the thickness of the shims SM1 and SM2 is adjusted to cope with the change in the thickness of the substrate S, etc. However, in this embodiment, the
於該圖中,對與圖9至圖11所示之第4實施形態之構成要素相同之要素標註相同符號,而省略其說明。 In this figure, the same elements as those of the fourth embodiment shown in FIGS. 9 to 11 are denoted by the same reference numerals, and the description thereof is omitted.
如圖12所示,於本實施形態之基板處理裝置100中,於保持保持部本體22之端部之保持具23與轉動體25之間設置有使轉動體25之壓印滾筒設置部25a之外周面移位之移位環61。移位環61設置有突部,該突部係繞旋轉軸線AX1而形成於與轉動體25對向之側,且具備隨著與轉動體25分離直徑逐漸擴大之斜面61a。而且,於轉動體25上設置有自外側嵌合於斜面61a之斜面25b。又,具備於旋轉軸線AX1方向自與移位環61為相反側係合於轉動體25之頭部62b、及繞與旋轉軸線AX1平行之軸與移位環61螺合之軸部62a的調整螺釘部(負載賦予部)62沿著與以軸線AX1為中心之XZ面平行之圓,以等角度間隔設置於複數個部位。於本實施形態中,為如下構成:藉由壓印滾筒設置部25a抵接於壓印滾筒體30之基板保持面31而使光罩保持部20與壓印滾筒體30帶動旋轉。
As shown in FIG. 12, in the
於該圖12中,於調整光罩保持面22a與基板保持面31之間距量(光罩面與基板面之間距量G)時,例如,使調整螺釘62向軸部62a螺入至移位環61中之方向旋轉。由於調整螺釘62之頭部62b係合於移位環61,故而軸部62a以藉由向移位環61之螺入而沿與旋轉軸線AX1平行之軸向擴展之方式彈性變形。軸部62a之彈性恢復力係作為向接近於移位環61之方向之負載透過頭部62b作用於轉動體25。
In FIG. 12, when adjusting the distance between the
由於被施加有向接近於移位環61之方向之負載的轉動體25向斜面25b沿著移位環61之斜面61a而擴徑之方向移動,故而向接近於移位環61之方向之負載轉換為擴徑方向從而使壓印滾筒設置部25a彈性變形而擴徑。藉由壓印滾筒設置部25a擴徑,而可與擴徑之量相對應地擴大光罩保持面22a與基板保持面31之間距量(光罩面與基板面之間距量G)。此處,於擴徑之量過大之情形時,藉由使上述調整螺釘62向相反方向旋轉,從而軸部62a之彈性變形量變少,對轉動體25賦予之向接近於移位環61之方向之負載減少,藉此壓印滾筒設置部25a之擴徑量變小。
Since the rotating
如此,於本實施形態中,藉由使調整螺釘62旋轉,而可根據向接近於移位環61之方向之負載、斜面61a、25b之角度調整壓印滾筒設置部25a擴徑之量,從而可容易地將光罩保持面22a與基板保持面31之間距量(光罩面與基板面之間距量G)調整為所需之值而形成。
In this way, in the present embodiment, by rotating the
再者,於藉由調整螺釘62之旋轉而擴大壓印滾筒設置部25a之直徑之情形時,如上文之圖11所示,抵接面tf與光罩M之外周面之Z方向(直徑方向)之間隔產生變化,故而光罩M之外周面與基板S之外周面之相對周邊速度會產生差,因此較理想的是將此情況亦考慮在內而決定壓印滾筒設置部25a之直徑之擴大量。
Furthermore, when the diameter of the impression
再者,關於上述第5實施形態中所說明之調整螺釘62之旋轉,亦
可採用如下構成:另外設置旋轉驅動裝置,根據應調整之間距量透過旋轉驅動裝置來控制調整螺釘62之旋轉量。又,作為使壓印滾筒設置部25a擴徑之方法,除了上述調整螺釘62以外,亦可設為使用壓電式(piezo)元件等壓電元件對轉動體25賦予旋轉軸線AX1方向之負載之構成。進而,除了上述將旋轉軸線AX1方向之負載轉換為直徑方向之負載之構成以外,亦可設為以沿直徑方向移位之方式設置壓電元件,根據壓電元件之移位量使壓印滾筒設置部25a擴徑或縮徑之構成。
Furthermore, the rotation of the
(第6實施形態) (Sixth Embodiment)
其次,參照圖13及圖14,對基板處理裝置100之第6實施形態進行說明。
Next, referring to FIGS. 13 and 14, a sixth embodiment of the
於上述第1~第5實施形態中,設為曝光區域內之基板S係保持於壓印滾筒體30之外周面31上之構成進行了說明,但於本實施形態中,對使用以環形帶狀環繞之帶將基板S保持為平面狀之構成進行說明。
In the first to fifth embodiments described above, it is assumed that the substrate S in the exposure area is held on the outer
於該等圖中,對與圖1至圖12所示之上述實施形態之構成要素相同之要素標註相同符號,而省略其說明。 In these figures, the same elements as the constituent elements of the above-mentioned embodiment shown in FIGS. 1 to 12 are denoted by the same reference numerals, and the description thereof will be omitted.
本實施形態之基板處理裝置100具備供給基板S之基板供給部11、回收基板S之基板回收部12、及搬送基板S之基板搬送部90。基板供給部11將捲成例如輥狀之基板S送出而供給。於該情形時,於基板供給部11設置有捲繞基板S之軸部或使該軸部旋轉之旋轉驅動裝置等。此外,亦可為設置有覆蓋捲成例如輥狀之狀態之基板S之蓋部等之構成。再者,基板供給部11並不限定於將捲成輥狀之基板S送出之機構,只要為包含將帶狀之基板S沿其長度方向依序送出之機構者即可。
The
基板回收部12將進行過曝光處理之基板S捲繞成例如輥狀而回收。與基板供給部11同樣地,於基板回收部12設置有用以捲繞基板S之軸部或使該軸部旋轉之旋轉驅動源、覆蓋所回收之基板S之蓋部等。再者,於在基板回收
部12中將基板S切割成面板狀之情形等時,亦可為例如將基板S以重疊之狀態回收等以與捲成輥狀之狀態不同之狀態回收基板S之構成。
The board|
基板搬送部90具有:複數個導輥R(於圖13中為2個),其等導引自基板供給部11供給之基板S;及基板支承機構80,其支承基板S。基板支承機構80係配置於導輥R之間。
The
基板支承機構80具有帶部(環形帶)81、帶搬送部82及導引平台(流體支承部)83。又,於基板支承機構80中,雖省略了圖示,但設置有清洗帶部81之帶清洗部、及去除帶部81之靜電之靜電去除部等。
The
帶部81係例如使用不鏽鋼等金屬材料而形成為環狀。
The
帶部81藉由設置於外側之支承面(基板保持面)81a自背面側支承基板S。於帶部81上遍及一周設置有沿周向排列而配置之複數個貫通孔(未圖示)。各貫通孔係貫通帶部81之支承面81a與設置於該支承面81a之背面側之背面81b之間而形成。該複數個貫通孔於Y方向形成有複數行。帶部81之一部分係與基板S之背面對向而配置。
The
帶搬送部82具有2個搬送輥82a~82b。於搬送輥82a~82b上捲繞有帶部81。搬送輥82b係配置於較曝光區域更靠基板S之搬送方向之上游側(+X側)。搬送輥82a係配置於較曝光區域更靠基板S之搬送方向之下游側。因此,帶部81成為以沿X方向橫穿曝光區域之方式移動之構成。
The belt conveyance
搬送輥82a及搬送輥82b係於Y方向延伸而配置,並且以於X方向排列之方式互相留出間隔而配置。
The
搬送輥82a、82b於帶部81具有張力之狀態下,以繞與Y方向平行之軸線AX3(參照圖14)環繞移動之方式調整位置。
The conveying
搬送輥82a成為驅動帶部81之驅動輥。於搬送輥82a上設置有驅動部(環繞驅動部)82e。於本實施形態中,例如搬送輥82a為驅動輥,剩餘之搬送
輥82b為從動輥。作為驅動輥之搬送輥82a係例如由多孔質材料形成,且與未圖示之抽吸裝置連接。藉由該構成,可使帶部81吸附於外周面,故而可將動力傳達至該帶部81。
The conveying
導引平台83係使用例如可使氣體通過之多孔質材料而形成為矩形之板狀。導引平台83之+Z側之面(導引面)83a係平行於XY平面而形成,藉由朝向基板S噴出氣體(流體),而發揮作為藉由氣壓(流體壓力)自-Z側以非接觸之方式支承基板S之平面襯墊之功能。導引平台83對基板S及帶部81以沿著導引面83a向X方向移動之方式進行導引。
The
導引平台83於X方向係配置於搬送輥82a與搬送輥82b之間。又,如圖14所示,導引平台83於Y方向係配置於與帶部81重疊之位置。導引平台83之導引面83a係與帶部81之背面對向而設置。導引平台83係藉由未圖示之固定機構固定位置。
The
又,於本實施形態中,驅動部82e之動力係藉由輪列機構84透過一體地旋轉之旋轉軸86而傳達至光罩驅動輥(旋轉部)85。作為輪列機構84,可使用包含能以非接觸之方式傳達動力之磁性齒輪者。
Furthermore, in this embodiment, the power train of the driving
圖14係將圖13所示之基板處理裝置100沿與ZY平面平行之平面破斷之剖面圖。
14 is a cross-sectional view of the
如圖14所示,光罩驅動輥85根據轉動體25之配置,於Y方向留出間隔而設置有2個。於光罩驅動輥85之間,旋轉軸86支承於留出間隔而配置之一對軸承87上。該等軸承87利用由壓電式元件等構成之升降裝置(移動部)88沿Z方向受到微小驅動。
As shown in FIG. 14, the
於上述構成之基板處理裝置100中,藉由升降裝置88透過軸承87使旋轉軸86沿Z方向移動,藉此透過光罩驅動輥85及轉動體25使保持部本體22沿Z方向一體地移動,且相對於導引平台83於Z方向相對移動。
In the
藉此,可調整保持部本體22之光罩保持面22a與帶部81之支承面81a之間距量G。因此,保持於光罩保持面22a上之光罩M與保持於支承面81a上之基板S之間之間距量G亦被調整為既定量。
Thereby, the distance G between the
若調整光罩M與基板S之間距量,則基板處理裝置100藉由輥方式而製造有機EL(Electro-Luminescence,電致發光)元件、液晶顯示元件等顯示元件(電子元件)。以下,對使用上述構成之基板處理裝置100製造顯示元件之步驟進行說明。
If the distance between the mask M and the substrate S is adjusted, the
首先,將捲繞於未圖示之輥上之帶狀之基板S安裝於基板供給部1。以自該狀態從基板供給部11送出該基板S之方式,使驅動部82e作動而使搬送輥82a旋轉。另一方面,驅動部82e之動力透過輪列機構84而傳達至旋轉軸86。藉由旋轉軸86之旋轉而使光罩驅動輥85旋轉,從而帶動抵接於光罩驅動輥85之轉動體25旋轉,藉此保持於保持部本體22a上之光罩M繞旋轉軸線AX1旋轉。因此,光罩M與伴隨著帶部81之環繞動作之基板S之搬送同步(連動)地旋轉。於該狀態下由來自照明部10之照明光照明之光罩M之圖案影像被逐次曝光於基板S上。
First, a strip-shaped substrate S wound on a roller (not shown) is mounted on the
如此,於本實施形態中,亦可應對基板S之厚度變化,而容易地調整保持部本體22之光罩保持面22a與帶部81之支承面81a之間距量。又,於本實施形態中,亦可設為如下構成:於間距之調整量微小,又,例如在帶部81與導引平台83之導引面83a之間形成真空加壓型之空氣軸承層之情形時,藉由使構成平面襯墊之導引面83a沿Z方向微動而調整間距量。
In this way, in this embodiment, it is also possible to easily adjust the distance between the
再者,於上述第6實施形態中,例示如下構成而進行了說明,即,藉由轉動體25抵接於光罩驅動輥85而被帶動旋轉,從而使光罩M繞旋轉軸線AX旋轉,但並不限定於此,例如,如圖15所示,亦可為如下構成:藉由在與基板S分離之位置上使轉動體25抵接於帶部81而被帶動旋轉,從而使光罩M旋轉。
In addition, in the above-mentioned sixth embodiment, the following configuration is exemplified and explained. That is, when the
於該構成之基板處理裝置100中,藉由將第4實施形態中所說明之
填隙片SM1以與基板S之厚度相應之厚度設置於壓印滾筒設置部25a之外周面上,而可調整光罩保持面22a與導引平台83之導引面83a之間(光罩面與基板面之間)之間距量。
In the
又,於間距調整量微小之情形時,亦可藉由調整上述空氣軸承層之厚度而調整間距量。具體而言,如圖15所示,作為流體壓力調整部之控制部CONT控制對導引平台83供給空氣之供給部89,而調整氣墊部中之轉動體25(壓印滾筒設置部25a)所抵接之區域之空氣供給量,藉此可調整空氣軸承層之厚度而使轉動體25向相對於帶部81分離、接近之方向移動。藉此,可容易地變更帶部81與轉動體25之距離、即光罩保持面22a與導引面83a之間(光罩面與基板面之間)之間距量。
In addition, when the amount of pitch adjustment is small, the amount of pitch can also be adjusted by adjusting the thickness of the air bearing layer. Specifically, as shown in FIG. 15, the control unit CONT, which is a fluid pressure adjustment unit, controls the
以上,一面參照隨附圖式一面對本發明之較佳之實施形態進行了說明,但當然本發明並不限定於上述例。上述例中所示之各構成構件之諸形狀或組合等為一例,可於不脫離本發明之主旨之範圍內根據設計要求等進行各種變更。 Above, the preferred embodiments of the present invention have been described with reference to the accompanying drawings, but of course, the present invention is not limited to the above-mentioned examples. The shapes or combinations of the constituent members shown in the above examples are just an example, and various changes can be made in accordance with design requirements and the like without departing from the spirit of the present invention.
例如,於上述實施形態中,設為於保持部本體22之外周面保持光罩M之構成,但並不限定於此,亦可設為使光罩M保持於保持部本體22之內周面之構成。
For example, in the above embodiment, the mask M is held on the outer peripheral surface of the holder
又,於上述實施形態中,關於設置測量光罩M與基板S之相對位置之測量部之構成,僅於第2、第3實施形態中進行了說明,但當然對於其他實施形態亦可應用。 In addition, in the above-mentioned embodiment, the configuration of the measurement unit provided with the relative position of the measurement mask M and the substrate S has been described only in the second and third embodiments, but of course it can also be applied to other embodiments.
又,作為下述元件製造系統SYS中之處理裝置U3,可使用上述實施形態之基板處理裝置100。
In addition, as the processing apparatus U3 in the component manufacturing system SYS described below, the
(第7實施形態) (Seventh embodiment)
以下,參照圖16至圖20,對本發明之第7實施形態之基板處理裝置進行說明。 Hereinafter, a substrate processing apparatus according to a seventh embodiment of the present invention will be described with reference to FIGS. 16 to 20.
於以下之說明中,存在對相同之構成要素標註相同符號而簡化或省略其說明之情況。又,只要無特別說明,則關於構成要素或其等之說明,設為與上述實施形態相同。 In the following description, the same constituent elements may be denoted with the same reference numerals, and the description may be simplified or omitted. In addition, unless otherwise specified, the description of the constituent elements or the like shall be the same as in the above-mentioned embodiment.
再者,於本實施形態中,例示光罩保持部與基板保持部藉由摩擦而同步旋轉(帶動旋轉)之構成之情形而進行說明。 In addition, in the present embodiment, a description will be given by exemplifying a configuration in which the mask holding portion and the substrate holding portion are rotated in synchronization (driven rotation) by friction.
圖16係基板處理裝置200之主要部分之前視剖面圖,圖17係構成基板處理裝置200之光罩單元MU之前視圖,圖18係光罩單元MU之端部之局部放大圖。
16 is a front cross-sectional view of the main part of the
基板處理裝置200係將具有可撓性之片狀之光罩M之圖案相對於帶狀之基板(例如,帶狀之膜構件)S進行曝光處理者,且以照明部10、光罩單元MU、基板保持單元SU、對準顯微鏡AL1、AL2、及控制部(未圖示)作為主體而構成。光罩M係由具有可撓性之片狀之玻璃材料形成為例如200~500μm左右之厚度。
The
再者,於本實施形態中,將鉛垂方向設為Z方向,將與光罩單元MU及基板保持單元SU之旋轉軸線AX1、AX2平行之方向設為Y方向,將與Z方向及Y方向正交之方向設為X方向而進行說明。 Furthermore, in this embodiment, the vertical direction is set to the Z direction, the directions parallel to the rotation axes AX1 and AX2 of the mask unit MU and the substrate holding unit SU are set to the Y direction, and the Z direction and Y direction The orthogonal direction will be described as the X direction.
照明部10係朝向捲繞於光罩單元MU中之光罩保持部20(下述)上之光罩M之照明區域照射照明光者,且將與螢光燈同樣地以直管型呈放射狀發出曝光用之照明光者、或自圓筒狀之石英棒之兩端導入照明光且於背面側設置有擴散構件者、或者將多個發射高亮度之紫外線區域之光之半導體雷射或LED等排列成一行而成者收容於支承光罩保持部20之內筒21之內部空間內。
The illuminating
光罩單元MU具備光罩保持部20、及轉動體25。光罩保持部20具備保持部本體22與保持具23。該等保持部本體22、保持具23、轉動體25係以一體化之狀態進行設置,又,分別形成有於旋轉軸線(既定之軸線)AX1方向連
通而供內筒21插通之貫通孔。
The mask unit MU includes a
保持部本體22係由以旋轉軸線(既定之軸線)AX1為軸線之圓筒狀之玻璃材料形成,且具備沿著既定半徑之圓筒面保持光罩M之外周面(周面)22a。如圖17所示,於捲繞有光罩M時,外周面22a之周長係設定為繞旋轉軸線AX1之方向之兩端分離之長度(於以下之說明中,將保持部本體22及保持具23中於繞旋轉軸線AX1之方向(掃描曝光之方向)上光罩M之兩端部分離之區域稱為光罩分離區域Ma)。
The holding portion
保持具23係由金屬材料形成為圓環狀,分別設置於保持部本體22之長度方向兩端部,且具有自內周側保持保持部本體22之保持部23a。作為保持具23之形成材料,較佳為具有與保持部本體22相同之線膨脹係數者。保持具23之外周面23b形成為直徑較保持部本體22之外周面22a之直徑小。
The
又,於各保持具23之外周面23b上,除了光罩分離區域Ma以外以於Y方向留出間隔而並列之方式成對地形成沿繞旋轉軸線AX1之方向延伸之槽部23c,並且形成為如下配置:形成於與光罩分離區域Ma分離之位置上周向之端部彼此連接且周圍由槽部23c包圍而成之島部,而成為0字狀。
In addition, on the outer
於各槽部23c中,如圖18所示,以與光罩保持部20之外周面22a成為大致同一平面之突出量裝填有密封保持具23與光罩M之間之間隙之密封部70。作為密封部70,例如可使用O形環。由密封部70密封而成之空間、即由保持具23、光罩M、密封部70所圍成之密閉空間係藉由抽吸部VC進行負壓抽吸。由該等密封部70及抽吸部VC構成將光罩M裝卸自如地固定於光罩保持部20之固定部。
In each
又,如圖17所示,於各保持具23上分別設置有位於光罩分離區域Ma之軸狀之係合部(定位銷)71、及位於較光罩M更靠-Y側之軸狀之係合部(定位銷)72。係合部71係於將光罩M之周向之一端緣抵壓至外周面時,決定該光罩
M相對於光罩保持部20之周向之相對位置者,且以與光罩M之外周面成為大致同一平面之高度突設。於係合部71之頂面形成有成為與光罩M之相對位置關係之指標之指標標記(指標部)FM。
Furthermore, as shown in FIG. 17, each
係合部72係於將光罩M之-Y側之一端緣抵壓至外周面時,決定該光罩M相對於光罩保持部20之Y方向(寬度方向)之相對位置者,且以與光罩M之外周面成為大致同一平面之高度突設。光罩M藉由將端緣抵壓至係合部71、72之兩者,而定位相對於光罩保持部20之相對位置。而且,於光罩M上形成有光罩標記MM,該光罩標記MM例如於抵壓至係合部71之端緣附近形成有一個,於與該端緣為相反側之端緣附近形成有兩個,且分別於在設計上與係合部71相同之Y位置上與圖案呈既定之位置關係。
The
內筒21係由可使照明光透過之圓筒狀之石英等、或者具備供來自照明部10之照明光通過之狹縫狀之開口部21a的圓筒狀之陶瓷材料或金屬等形成。
The
返回至圖16,轉動體25透過保持具23與保持部本體22物理性地結合(連結),且具有繞旋轉軸線AX1突設於外周側並於壓印滾筒體30之外周面上轉動之壓印滾筒設置部25a。壓印滾筒設置部25a之外徑形成為較保持於保持部本體22之光罩保持面22a上之光罩M之外側之面所構成之外徑大既定量。具體而言,於壓印滾筒設置部25a抵接於壓印滾筒體30之外周面而將保持部本體22支承於既定位置時,壓印滾筒設置部25a之外徑形成為在保持於壓印滾筒體30上之基板S與光罩M之間形成既定量之間距之值。
Returning to FIG. 16, the rotating
又,轉動體25於內周側透過空氣軸承26相對於內筒21繞旋轉軸線AX1以非接觸之方式旋轉自如地受到支承。因此,保持部本體22、保持具23、轉動體25繞旋轉軸線AX1一體地旋轉。
In addition, the rotating
內筒21係透過板彈簧28而載置於自於Y方向留出間隔而設置之
基座部B向互相接近之方向延伸設置之支承台27上。板彈簧28之彈簧常數係根據光罩保持部20之自重及透過轉動體25對壓印滾筒體30施加之負載、即轉動體25之壓印滾筒設置部25a於壓印滾筒體30之外周面上轉動時之摩擦力而設定。於內筒21之內部空間配設有上述照明部10,於在照明部10之照明光出射方向對向之位置上形成有供照明光通過之開口部21a(參照圖16)。
The
對準顯微鏡AL1、AL2係檢測光罩M與光罩保持部20之相對位置關係者,以可觀察光罩M之光罩標記MM及係合部71之指標標記FM之方式,配置於與各標記MM、FM相同之Y位置上。
The alignment microscopes AL1 and AL2 are used to detect the relative positional relationship between the mask M and the
基板保持單元SU具備壓印滾筒體(基板保持部)30。 The substrate holding unit SU includes an impression cylinder body (substrate holding portion) 30.
壓印滾筒體30係形成為繞與Y軸平行且設定於旋轉軸線AX1之-Z側之旋轉軸線(第2軸線)AX2旋轉之圓柱狀,於內部設置有中空部且以慣性力矩變小之方式設定。壓印滾筒體30之外周面設為接觸保持基板S之基板保持面31。於壓印滾筒體30之Y方向兩端面上,直徑較壓印滾筒體30小且以同軸突出之旋轉支承部32繞旋轉軸線AX2旋轉自如地支承於基座部B上。又,於本實施形態中,設置有藉由旋轉驅動壓印滾筒體30而使壓印滾筒體30與光罩保持部20同步地旋轉之驅動裝置33。
The
其次,對上述構成之基板處理裝置200中光罩單元MU之組裝順序進行說明。
Next, the assembly procedure of the mask unit MU in the
首先,關於光罩M,製成為例如於平坦性良好之短條狀之超薄玻璃板(例如厚度為200~500μm)之一面上利用鉻等遮光層形成有包含線寬20μm以下之微細圖案之顯示元件用之電路圖案等的透過型之平面狀片材光罩。光罩M於基板處理時係具有與保持部本體22之外周面22a之半徑相應之曲率而安裝,故而於周向上在安裝時根據光罩M之厚度及外周面22a之半徑而擴展(外周面側)、或壓縮(內周面側)。因此,關於周向,光罩M之圖案成為安裝時之大小根據上述厚度及曲
率而相對於形成時之大小放大或縮小後之圖案。因此,於圖案形成時,以將該放大或縮小估算在內之大小形成圖案。
First, regarding the photomask M, for example, a short strip-shaped ultra-thin glass plate with good flatness (for example, a thickness of 200 to 500 μm) is formed with a light-shielding layer such as chromium formed with a fine pattern including a line width of 20 μm or less. Transmissive flat sheet masks for circuit patterns and the like for display elements. The mask M is installed with a curvature corresponding to the radius of the outer
以上述方式製成之光罩M係以仿照保持部本體22之外周面22a而彎曲,且捲繞(貼附)於該外周面上之狀態使用。於將光罩M捲繞於外周面22a上時,將光罩M之周向之一端緣抵壓至係合部71之外周面上,且將光罩M之寬度方向之一端緣抵壓至係合部72,而於相對於光罩保持部20(保持部本體22)定位光罩M之狀態下進行捲繞。於捲繞光罩M之後,使抽吸部VC進行動作而對由密封部70密封之密閉空間進行負壓抽吸,藉此使光罩M於Y方向之兩端部被吸附保持。再者,若於光罩M與保持部本體22之間形成空氣層而產生折射率差較大之界面,則有時會因干擾現象或多重反射等之影響,而使曝光於基板S上之圖案之像質惡化,故而較佳為於光罩M與保持部本體22之間介裝具有與蓊料相同程度之折射率之純水、或油浸顯微鏡等中所使用之油等液體,以抑制此種較大之折射率差之產生。
The mask M manufactured in the above-mentioned manner is used in a state of being bent imitating the outer
該情形時之液體較理想的是於曝光用之照明光之波段中具有充分之透過率(例如90%以上)者。 In this case, the liquid is preferably one that has sufficient transmittance (for example, 90% or more) in the wavelength band of the illumination light for exposure.
又,由於此種液體會自光罩M之周緣部逐漸蒸發,故而較佳為於保持部本體22之外周面22a中之光罩M之周緣所處之附近、或設置有係合部71、72之附近,例如,在外周面22a之一部分刻設複數條數μm~數十μm程度之深度之親液性之槽(寬度為1μm左右),並預先設置自保持部本體22之外周面22a之上方透過滴管狀或針狀之噴嘴朝向該槽偶爾滴下液體之液體供給機構。
In addition, since this liquid will gradually evaporate from the peripheral edge of the mask M, it is preferable to provide a
若設定因此種構成,則向複數個槽中滴下之液體於保持部本體22以實用上之角速度(例如作為光罩M之圖案面之周速為50~200mm/S左右)旋轉期間被捕捉至槽內,故而可藉由毛細管現象滲入至保持部本體22之外周面22a與光罩M之間。
If this configuration is set, the liquid dropped into the plurality of grooves is captured during the rotation of the
當然,此種複數條槽係設置於光罩M上之圖案形成區域之外側且如不擾亂曝光用照明光之位置。 Of course, such a plurality of grooves are provided on the outer side of the pattern formation area on the photomask M, so as not to disturb the position of the illuminating light for exposure.
關於吸附保持有光罩M之光罩單元MU,於曝光處理前,預先檢測圖案之位置資訊。具體而言,一面使光罩保持部20繞旋轉軸線AX1旋轉,一面藉由對準顯微鏡AL1、AL2分別檢測光罩標記MM及指標標記FM。藉此,測量以指標標記FM為基準之光罩M之相對位置關係、即圖案之相對位置關係。藉由使用該相對位置關係進行既定之運算,而對於形成於光罩M上之圖案,可獲得繞旋轉軸線AX1之方向之位置、Y方向之位置、沿著外周面22a之方向之旋轉、及倍率等圖案相對於光罩保持部20之誤差資訊。
Regarding the mask unit MU holding the mask M, the position information of the pattern is detected in advance before the exposure process. Specifically, while the
其次,對基板處理裝置200之動作進行說明。
Next, the operation of the
透過空氣軸承26而由內筒21支承且保持光罩M之光罩保持部20於轉動體25之壓印滾筒設置部25a對壓印滾筒體30賦予有該光罩保持部20之自重與同板彈簧28之彈簧常數相應之向+Z側之賦能力之差量之負載的狀態下抵接。藉此,於光罩保持面22a與基板保持面31之間、即光罩M與基板S之間形成與壓印滾筒設置部25a之外徑相應之既定量之間距。再者,於調整壓印滾筒設置部25a對壓印滾筒體30賦予之負載時,只要更換為具有對應之彈簧常數之板彈簧28,或於在內筒21與支承台27之間預先插入有間隔件之狀態下設置板彈簧28而更換為與壓印滾筒設置部25a對壓印滾筒體30賦予之負載相應之間隔件即可。
The
其次,壓印滾筒體30藉由驅動裝置33之驅動而繞旋轉軸線AX2旋轉,並且自照明部10照射照明光,透過開口部21a透過保持部本體22,而自內周側對光罩M進行照明。伴隨著壓印滾筒體30之旋轉,而搬送捲繞於壓印滾筒體30之基板保持面31上而保持之基板S,並且於壓印滾筒設置部25a抵接於壓印滾筒體30之外周面之轉動體25被帶動旋轉,藉此透過保持具23將旋轉驅動力傳達至保持部本體22,從而使保持於保持部本體22之光罩M之圖案於將與基板S之既
定量之間距維持為固定之狀態下同步地移動。其次,由照明光照明之光罩M之圖案影像被逐次投影至基板S之投影區域。
Next, the
再者,於將光罩M之圖案投影至基板S時,較佳為根據預先求出之圖案之誤差資訊,調整基板S之繞旋轉軸線AX2之方向之位置、Y方向之位置、壓印滾筒體30相對於光罩保持部20之相對旋轉速度、旋轉軸線AX1、AX2之相對位置關係、光罩M與基板S之間距量。
Furthermore, when projecting the pattern of the mask M onto the substrate S, it is preferable to adjust the position of the substrate S in the direction around the axis of rotation AX2, the position in the Y direction, and the impression cylinder based on the error information of the pattern obtained in advance. The relative rotation speed of the
如此,於本實施形態之光罩單元MU中,利用由玻璃材料形成之保持部本體22保持由玻璃材料形成之光罩M,故而可容易地形成圖案,且可抑制耗費如將圖案直接形成於保持部本體22之情形時之時間而造成成本增加之情況。又,於本實施形態中,由於相對於並非圓筒面而係平面之光罩M形成圖案,故而即使為更微細寬度之圖案、例如20μm以下之線寬之圖案,亦能夠以高精度形成。
In this way, in the mask unit MU of the present embodiment, the
進而,於本實施形態中,在將光罩M安裝於光罩保持部20時,藉由使光罩M係合於係合部71、72,而可容易地定位於光罩保持部20上。而且,於本實施形態中,由於在係合部71設置有指標標記FM,故而無需另外設置指標標記用之構件,從而可謀求裝置之小型化及低價格化。又,於本實施形態中,藉由對利用抽吸部VC之抽吸/抽吸停止進行操作,亦可容易且迅速地更換光罩M。
Furthermore, in this embodiment, when the photomask M is mounted on the
(元件製造系統) (Component Manufacturing System)
其次,參照圖19,對具備上述基板處理裝置200之元件製造系統進行說明。
Next, referring to FIG. 19, a component manufacturing system including the above-mentioned
圖19係表示元件製造系統(撓性顯示器生產線)SYS之一部分之構成之圖。此處,表示自供給輥FR1抽出之可撓性之基板P(片材、膜等)依序經過n台處理裝置U1、U2、U3、U4、U5…Un後上捲於回收輥FR2上為止之例。上位控制裝置CONT2統一控制構成生產線之各處理裝置U1~Un。 FIG. 19 is a diagram showing the structure of a part of the component manufacturing system (flexible display production line) SYS. Here, it means that the flexible substrate P (sheet, film, etc.) drawn out from the supply roll FR1 passes through n processing devices U1, U2, U3, U4, U5...Un in order, and then is wound on the recovery roll FR2.的例。 Examples. The upper control device CONT2 uniformly controls the processing devices U1~Un that constitute the production line.
本實施形態之元件製造系統SYS係對基板P連續地實施用以製造 1個元件之各種處理之所謂輥對輥(Roll to Roll)方式之系統,實施過各種處理之基板P以元件(例如有機EL顯示器之顯示面板)為單位被分割(切割),而變為複數個元件。基板P之尺寸係例如寬度方向(成為短邊之Y方向)之尺寸為10cm~2m左右,長度方向(成為長邊之X方向)之尺寸為10m以上。 The component manufacturing system SYS of this embodiment continuously implements the substrate P for manufacturing The so-called roll to roll system of various treatments for one element, the substrate P that has been subjected to various treatments is divided (cut) in units of elements (for example, the display panel of an organic EL display), and becomes plural Elements. The size of the substrate P is, for example, the size in the width direction (the Y direction that becomes the short side) is about 10 cm to 2 m, and the size in the length direction (the X direction that is the long side) is 10 m or more.
於圖19中,正交座標系統XYZ係設為如下者:基板P之表面(或背面)以與XZ面垂直之方式設定,基板P之與搬送方向(長邊方向)正交之寬度方向係設定為Y方向。再者,該基板P亦可為預先藉由既定之預處理對其表面進行改質而活化者,或者於表面形成有用於精密圖案化之微細之間隔壁構造(凹凸構造)者。 In Figure 19, the orthogonal coordinate system XYZ is set as follows: the surface (or back) of the substrate P is set perpendicular to the XZ plane, and the width direction of the substrate P is perpendicular to the conveying direction (long side direction) Set to the Y direction. Furthermore, the substrate P may be modified and activated in advance by a predetermined pretreatment, or may have a fine partition structure (concave-convex structure) formed on the surface for precise patterning.
捲在供給輥FR1上之基板P係藉由夾持之驅動輥DR1而被抽出並搬送至處理裝置U1,基板P之Y方向(寬度方向)之中心係藉由邊緣位置控制器EPC1,以相對於目標位置控制在±十數μm~數十μm程度之範圍內之方式被伺服控制。 The substrate P wound on the supply roller FR1 is drawn out by the nipped driving roller DR1 and transported to the processing device U1. The center of the substrate P in the Y direction (width direction) is controlled by the edge position controller EPC1. The target position is controlled by servo in the range of ± tens of μm to tens of μm.
處理裝置U1係以印刷方式於基板P之表面沿基板P之搬送方向(長邊方向)連續地或選擇性地塗布感光性功能液(光阻、感光性矽烷偶合材料、UV硬化樹脂液等)之塗布裝置。於處理裝置U1內,設置有:壓印滾筒輥DR2,其捲繞基板P;塗布機構Gp1,其設置於該壓印滾筒輥DR2上,且包含用以於基板P之表面均勻地塗布感光性功能液之塗布用輥等;及乾燥機構Gp2,其用以將塗布於基板P上之感光性功能液中所含之溶劑或水分快速地去除;等。 The processing device U1 is to continuously or selectively apply photosensitive functional liquid (photoresist, photosensitive silane coupling material, UV curable resin liquid, etc.) on the surface of the substrate P along the conveying direction (long side direction) of the substrate P by printing. The coating device. In the processing device U1, there are provided: an impression roller DR2, which is wound around the substrate P; a coating mechanism Gp1, which is disposed on the impression roller DR2, and includes a surface for uniformly applying photosensitive on the surface of the substrate P Rollers for coating functional liquids, etc.; and drying mechanism Gp2, which is used to quickly remove the solvent or moisture contained in the photosensitive functional liquid coated on the substrate P; etc.
處理裝置U2係用以將自處理裝置U1搬送而來之基板P加熱至既定溫度(例如,數10~120℃左右),而使塗布於表面之感光性功能層穩定之加熱裝置。於處理裝置U2內,設置有:複數個輥與氣動式折返桿,其等用以折返搬送基板P;加熱腔室部HA1,其用以對搬入來之基板P進行加熱;冷卻腔室部HA2,其用以使經加熱之基板P之溫度以與後續步驟(處理裝置U3)之環境溫度 一致之方式下降;及驅動輥DR3,其被夾持;等。 The processing device U2 is a heating device for heating the substrate P transported from the processing device U1 to a predetermined temperature (for example, a few 10 to 120° C.) to stabilize the photosensitive functional layer coated on the surface. In the processing device U2, there are provided: a plurality of rollers and pneumatic turning rods, which are used for turning back and transporting the substrate P; a heating chamber portion HA1, which is used for heating the transferred substrate P; a cooling chamber portion HA2 , Which is used to make the temperature of the heated substrate P equal to the ambient temperature of the subsequent step (processing device U3) Lower in a consistent manner; and drive roller DR3, which is clamped; etc.
作為基板處理裝置200之處理裝置U3係上文之圖16~圖18所示之曝光裝置,對自處理裝置U2搬送而來之基板P(基板S)之感光性功能層照射與顯示器用之電路圖案或配線圖案相對應之紫外線之圖案化光。於處理裝置U3內,設置有:邊緣位置控制器EPC,其將基板P之Y方向(寬度方向)之中心控制於固定位置;驅動輥DR4,其被夾持;旋轉筒DR5(壓印滾筒體30),其以既定之張力部分地捲繞基板P,且呈一致之圓筒面狀支承基板P上之被圖案曝光之部分;及2組驅動輥DR6、DR7,其等用以對基板P賦予既定之鬆弛(遊隙)DL;等。
The processing device U3 as the
進而,於處理裝置U3內設置有:透過型圓筒光罩M(光罩單元MU);照明機構IU(照明部10),其設置於該圓筒光罩M內,對形成於圓筒光罩M之外周面上之光罩圖案進行照明;及對準顯微鏡AM1、AM2,其等針對藉由旋轉筒DR5呈圓筒面狀得到支承之基板P之一部分,為了使圓筒光罩M之光罩圖案之一部分之圖像與基板P相對地位置對準(對準),而檢測預先形成於基板P上之對準標記等。 Furthermore, the processing device U3 is provided with: a transmissive cylindrical mask M (mask unit MU); an illuminating mechanism IU (illumination unit 10), which is installed in the cylindrical mask M, and is formed on the cylindrical light The mask pattern on the outer peripheral surface of the mask M is illuminated; and the microscopes AM1 and AM2 are aligned with a part of the substrate P supported by the rotating drum DR5 in a cylindrical shape, in order to make the cylindrical mask M The image of a part of the mask pattern is aligned (aligned) relative to the substrate P, and the alignment mark and the like formed on the substrate P in advance are detected.
處理裝置U4係對自處理裝置U3搬送而來之基板P之感光性功能層進行藉由濕式之顯影處理、無電解鍍敷處理等之濕式處理裝置。於處理裝置U4內,設置有:3個處理槽BT1、BT2、BT3,其等於Z方向階層化;複數個輥,其等使基板P彎折而搬送;及驅動輥DR8,其被夾持;等。 The processing device U4 is a wet processing device that performs wet development processing, electroless plating processing, etc., on the photosensitive functional layer of the substrate P conveyed from the processing device U3. In the processing device U4, there are provided: three processing tanks BT1, BT2, BT3, which are equal to the stratification in the Z direction; a plurality of rollers, which bend and transport the substrate P; and a driving roller DR8, which is clamped; Wait.
處理裝置U5係將自處理裝置U4搬送而來之基板P暖化,而將於濕式製程中濕潤之基板P之水分含量調整為既定值之加熱乾燥裝置,省略詳細情況。其後,經過若干個處理裝置並通過一系列製程之最後之處理裝置Un後之基板P透過被夾持之驅動輥DR1而上捲於回收輥FR2上。於其上捲時,亦藉由邊緣位置控制器EPC2逐次修正控制驅動輥DR1與回收輥FR2之Y方向之相對位置,以 便使基板P之Y方向(寬度方向)之中心、或Y方向之基板端不於Y方向產生偏差。 The processing device U5 is a heating and drying device that warms the substrate P transported from the processing device U4, and adjusts the moisture content of the wetted substrate P in the wet process to a predetermined value, and the details are omitted. After that, the substrate P that has passed through a number of processing devices and passed through the final processing device Un of a series of processes passes through the clamped driving roller DR1 and is wound on the recovery roller FR2. During its winding, the edge position controller EPC2 is also used to sequentially correct and control the relative positions of the drive roller DR1 and the recovery roller FR2 in the Y direction to This prevents the center of the substrate P in the Y direction (width direction) or the substrate end in the Y direction from deviating from the Y direction.
於上述元件製造系統SYS中,由於使用上述基板處理裝置200作為處理裝置U3,故而可容易地形成圖案,且可抑制耗費如於保持部本體22形成圖案之情形時之時間而造成成本增加之情況,從而能以低成本製造高精度之元件。
In the above-mentioned component manufacturing system SYS, since the above-mentioned
再者,圖19所示之處理裝置U3亦可為上文之圖1~圖15之各實施形態中所說明之基板處理裝置100。
Furthermore, the processing apparatus U3 shown in FIG. 19 may also be the
以上,一面參照隨附圖式一面對本發明之較佳之實施形態進行了說明,但當然本發明並不限定於上述例。上述例中所示之各構成構件之諸形狀或組合等為一例,可於不脫離本發明之主旨之範圍內根據設計要求等進行各種變更。 Above, the preferred embodiments of the present invention have been described with reference to the accompanying drawings, but of course, the present invention is not limited to the above-mentioned examples. The shapes or combinations of the constituent members shown in the above examples are just an example, and various changes can be made in accordance with design requirements and the like without departing from the spirit of the present invention.
例如,於上述實施形態中,設為將光罩M捲繞(貼付)於保持部本體22之外周面22a上之構成,但並不限定於此,如圖20所示,亦可設為貼付於保持部本體22之內周面之構成。於該情形時,可採用如下構成等:將照明部10配置於光罩單元MU之外側,並且將光罩M之周向之長度設為未達保持部本體22之內周面之周長之一半,且使來自由照明部10之照明光照明之光罩圖案之光自與保持部本體22之照明光之入射位置相反之側出射;或利用設置在內筒21上之反射鏡部使來自光罩圖案之光向旋轉軸線AX1延伸之方向反射而導向光罩單元MU之外側。
For example, in the above-mentioned embodiment, the mask M is wound (attached) to the outer
又,於上述實施形態中,設為使用密封部70及抽吸部VC作為用以將光罩M固定於光罩保持部20之固定部的構成,但並不限定於此,例如,亦可設為使用接著劑將光罩M固定於光罩保持部20之構成、或使用藉由機械夾具機構將光罩M夾持固定於光罩保持部20上之夾持部進行固定之構成。
In addition, in the above-mentioned embodiment, the sealing
又,亦可為藉由靜電吸附方式(庫侖力(Coulomb force))將光罩M吸附於
光罩保持部20上之構成。
In addition, the photomask M may be adsorbed on the mask M by electrostatic adsorption (Coulomb force)
The structure on the
即使於如上所述般將光罩M貼付於保持部本體22之內周面之情形時,若於保持部本體22之內周面與光罩M之間出現空氣層,則曝光於基板S上之圖案之像質劣化之可能性亦較高,故而較理想的是以與上文之實施形態相同之方式,於保持部本體22之內周面與光罩M之間,以成為既定厚度之層之方式填充具有與光罩M之母材(玻璃等透明薄板)相同程度之折射率之液體。
Even when the photomask M is attached to the inner peripheral surface of the
(第8實施形態) (Eighth Embodiment)
以下,參照圖21至圖24,對本發明之第8實施形態之基板處理裝置進行說明。 Hereinafter, referring to FIGS. 21 to 24, a substrate processing apparatus according to an eighth embodiment of the present invention will be described.
於以下之說明中,存在對相同之構成要素標註相同符號而簡化或省略其說明之情況。又,只要無特別說明,則關於構成要素或其等之說明,設為與上述實施形態相同。 In the following description, the same constituent elements may be denoted with the same reference numerals, and the description may be simplified or omitted. In addition, unless otherwise specified, the description of the constituent elements or the like shall be the same as in the above-mentioned embodiment.
圖21係基板處理裝置300之主要部分之前視剖面圖,圖22係基板處理裝置之剖面立體圖。
FIG. 21 is a front cross-sectional view of the main part of the
基板處理裝置300係將具有可撓性之片狀之光罩M之圖案相對於帶狀之基板(例如,帶狀之膜構件)S進行曝光處理者,且以照明部10、光罩單元MU2、基板保持單元SU、及控制部CONT作為主體而構成。
The
再者,於本實施形態中,將鉛垂方向設為Z方向,將與光罩單元MU2及基板保持單元SU之旋轉軸線平行之方向設為Y方向,將與Z方向及Y方向正交之方向設為X方向而進行說明。 Furthermore, in this embodiment, the vertical direction is set to the Z direction, the direction parallel to the rotation axis of the mask unit MU2 and the substrate holding unit SU is set to the Y direction, and the direction perpendicular to the Z direction and the Y direction The direction will be described as the X direction.
照明部10係朝向捲繞於光罩單元MU2中之光罩保持部20(下述)上之光罩M之照明區域照射照明光者,可使用與螢光燈同樣地以直管型且呈放射狀發出曝光用之照明光者、或自圓筒狀之石英棒之兩端導入照明光且於背面側設置有擴散構件者,並將其收容於支承光罩保持部20之內筒21之內部空間內。
The illuminating
光罩單元MU2具備光罩保持部20、板彈簧(彈性構件)24、及
轉動體(支承構件)25。光罩保持部20具備圓筒狀之保持部本體(圖案保持構件)22、及分別設置於保持部本體22之長度方向兩端部之保持具(環狀部)23。該等保持部本體22、保持具23、板彈簧24、轉動體25係以一體化之狀態進行設置,又,分別形成有於旋轉軸線(既定之軸線)AX1方向連通而供內筒21插通之貫通孔。
The mask unit MU2 includes a
內筒21係由可使照明光透過之圓筒狀之石英等、或者具備供來自照明部10之照明光通過之狹縫狀之開口部21a的圓筒狀之陶瓷材料或金屬等形成。保持部本體22於其外周面形成有沿著既定半徑之圓筒面保持光罩M之光罩保持面22a。保持具23係由金屬材料形成為圓環狀,如圖23所示,藉由硬化後表現彈性接著性能之接著劑23a而與保持部本體22之端部外周面接著。作為保持具23之形成材料,較佳為具有與保持部本體22相同之線膨脹係數者,但於線膨脹係數存在差之情形時,設為線膨脹係數較大之保持具23自外周側保持保持部本體22之構成,以便不因保持部本體22與保持具23之熱膨脹之差而對保持部本體22施加較大之負載。
The
轉動體25透過板彈簧24、間隔件24A、24B(參照圖23及圖24)與保持部本體22物理性地結合(連結),且具有繞旋轉軸線AX1突設於外周側並於壓印滾筒體30之外周面上轉動之壓印滾筒設置部25a。壓印滾筒設置部25a之外徑係形成為較保持於保持部本體22之光罩保持面22a上之光罩M之外側之面所構成之外徑大既定量。具體而言,於壓印滾筒設置部25a抵接於壓印滾筒體30之外周面而將保持部本體22支承於既定位置時,壓印滾筒設置部25a之外徑係形成為在保持於壓印滾筒體30上之基板S與光罩M之間形成既定量之間距之值。
The rotating
又,轉動體25於內周側透過空氣軸承26而相對於內筒21繞旋轉軸線AX1以非接觸之方式旋轉自如地受到支承。因此,保持部本體22、保持具23、板彈簧24、轉動體25繞旋轉軸線AX1一體地旋轉。
In addition, the rotating
板彈簧24係容許保持部本體22之旋轉軸線AX1之伸縮者,如圖24所示,由例如鋼材形成為環狀(圓環狀)。如圖23所示,板彈簧24透過間隔件24A於Y方向留出既定量之間隙而固定於轉動體25上。同樣地,板彈簧24透過間隔件24B於Y方向留出既定量之間隙而固定於保持具23上。間隔件24A係於距旋轉軸線AX1之距離大致相同之位置上繞旋轉軸線AX1以等間隔設置有3個。間隔件24B係於距旋轉軸線AX1之距離大於間隔件24A之位置上,以繞旋轉軸線AX1之位置處於間隔件24A之間之方式以等間隔設置有3個。
The
該等板彈簧24、間隔件24A、24B作為傳達部,於連結之保持具23、保持部本體22與轉動體25之間傳達旋轉驅動力,藉此使透過板彈簧24、間隔件24A、24B而連結之保持具23、保持部本體22及轉動體25成為如下構成:於繞旋轉軸線AX1之方向一體地旋轉,於旋轉軸線AX1方向,藉由作為伸縮容許部之板彈簧24產生彈性變形,而可實現保持具23、保持部本體22與轉動體25之相對之微小移動。
The leaf springs 24 and the
圖24所示之環狀之板彈簧24詳細而言成為如圖25所示之構成,於板彈簧24之一面上,以旋轉軸線AX1作為中心以約120度之配置固定3個間隔件24A,於板彈簧24之另一面上,以旋轉軸線AX1作為中心以約120度之配置且相對於表側之間隔件24A以±60度之配置固定3個間隔件24B。而且,間隔件24A、24B之各厚度設為相同,周向之尺寸設定得儘可能小。
The ring-shaped
3個間隔件24A藉由螺釘緊固環狀之轉動體25之端面與板彈簧24,3個間隔件24B藉由螺釘緊固環狀之保持具23之端面與板彈簧24。
The three
於本實施形態中,以此種構造構成伸縮容許部,此外,如圖26所示,亦可準備於Y方向(軸線AX1延伸之方向)與環狀之保持具23之直徑方向R上可彈性變形、且於保持具23之切線方向T上剛性極高之金屬性之撓曲構造體FLX,藉由該撓曲構造體FLX,於3處(以旋轉軸線AX1作為中心呈120度配置)
緊固保持具23與轉動體25。
In this embodiment, the expansion and contraction allowable portion is constructed with such a structure. In addition, as shown in FIG. 26, it may be prepared to be elastic in the Y direction (the direction in which the axis AX1 extends) and the diameter direction R of the ring-shaped
如圖26所示之撓曲構造體FLX若為1個則直徑方向R之剛性極低,但若自軸線AX1等距離地繞軸線AX1以120度配置於3處,則各撓曲構造體FLX之直徑方向R之變形自如度互相約束,從而保持具23與轉動體25於與旋轉軸線AX1正交之XZ面內方向以較高之剛性被緊固,於旋轉軸線AX1延伸之Y方向可彈性移位地被緊固。
If the flexural structure FLX shown in FIG. 26 is one, the rigidity in the radial direction R is extremely low. However, if the flexural structure FLX is arranged equidistantly from the axis AX1 at three locations around the axis AX1 at 120 degrees, each flexure structure FLX The degree of freedom of deformation in the diameter direction R is mutually restricted, so that the
內筒21係透過板彈簧28而載置於自於Y方向留出間隔而設置之基座部B向互相接近之方向延伸設置之支承台27上。板彈簧28之彈簧常數係根據光罩保持部20之自重及透過轉動體25對壓印滾筒體30施加之負載、即轉動體25之壓印滾筒設置部25a於壓印滾筒體30之外周面上轉動時之摩擦力而設定。於內筒21之內部空間內配設有上述照明部10,於在照明部10之照明光出射方向對向之位置上形成有供照明光通過之開口部21a(參照圖21及圖22)。
The
基板保持單元SU具備壓印滾筒體(旋轉筒)30。 The substrate holding unit SU includes an impression cylinder body (rotating cylinder) 30.
壓印滾筒體30係形成為繞與Y軸平行且設定於旋轉軸線AX1之-Z側之旋轉軸線(第2軸線)AX2旋轉之圓柱狀,如圖22所示,於內部設置有中空部30a且以慣性力矩變小之方式設定。壓印滾筒體30之外周面係設為接觸保持基板S之基板保持面31。於壓印滾筒體30之Y方向兩端面上,直徑較壓印滾筒體30小且以同軸突出之旋轉支承部32繞旋轉軸線AX2旋轉自如地支承於基座部B上。又,於本實施形態中,設置有藉由旋轉驅動壓印滾筒體30而使壓印滾筒體30與光罩保持部20同步地旋轉之驅動裝置33。
The
其次,對上述構成之基板處理裝置300之動作進行說明。
Next, the operation of the
透過空氣軸承26而由內筒21支承且保持光罩M之光罩保持部20於轉動體25之壓印滾筒設置部25a對壓印滾筒體30賦予該光罩保持部20之自重與通板彈簧28之彈簧常數相應之向+Z側之賦能力之差量之負載的狀態下抵接。藉此,於光
罩保持面22a與基板保持面31之間、即光罩M與基板S之間形成與壓印滾筒設置部25a之外徑相應之既定量之間距。再者,於調整壓印滾筒設置部25a對壓印滾筒體30賦予之負載時,只要更換為具有對應之彈簧常數之板彈簧28,或於在內筒21與支承台27之間預先插入有間隔件之狀態下設置板彈簧28而更換為與壓印滾筒設置部25a對壓印滾筒體30賦予之負載相應之間隔件即可。
The
其次,壓印滾筒體30藉由驅動裝置33之驅動而繞旋轉軸線AX2旋轉,並且自照明部10照射照明光,透過開口部21a透過保持部本體22,而自內周側對光罩M進行照明。伴隨著壓印滾筒體30之旋轉,而搬送捲繞於壓印滾筒體30之基板保持面31上而保持之基板S,並且於壓印滾筒設置部25a抵接於壓印滾筒體30之外周面之轉動體25被帶動旋轉,藉此透過板彈簧24、間隔件24A、24B將旋轉驅動力傳達至保持具23及保持部本體22,從而保持於保持部本體22上之光罩M之圖案於將與基板S之既定量之間距維持為固定之狀態下同步地移動。其次,由照明光照明之光罩M之圖案影像被逐次投影至基板S之投影區域。
Next, the
此時,光罩保持部20及壓印滾筒體30中,為了於壓印滾筒設置部25a與基板保持面31抵接之位置(直徑)上使周邊速度變為相同,且為了使光罩M與基板S之相對移動速度相同,光罩M之外周面之位置(直徑)及基板S之外周面之位置(直徑)係預先根據光罩M及基板S之厚度、保持部本體22之光罩保持面22a之直徑、壓印滾筒體30之基板保持面31之直徑之比而調整。例如,於光罩M及基板S之厚度相同,且光罩保持面22a之直徑、壓印滾筒體30之基板保持面31之直徑相同,保持部本體22及壓印滾筒體30以相同之角速度旋轉之情形時,只要使壓印滾筒設置部25a與基板保持面31抵接之位置至光罩M之外周面之位置之距離、與壓印滾筒設置部25a與基板保持面31抵接之位置至基板S之外周面之位置之距離相同即可。又,於除此以外之情形時,較佳為以光罩M之外周面之周邊速度與基板S之外周面之周邊速度相同之方式,對保持部本體22及壓印滾筒體30
之各者設定壓印滾筒設置部25a及基板保持面31之抵接位置之直徑。
At this time, in the
因此,參照圖27,對使光罩M之外周面之周邊速度與基板S之外周面之周邊速度一致為相同之一例進行說明。圖27係對藉由上文之圖11中所說明之填隙片之直徑調節方法進行變形而成者,對與圖23中之構件相同之構件標註相同之符號。其變形部分為如下方面:如圖27所示,於基板保持面31中之與壓印滾筒設置部25a抵接之部分捲繞有環狀之填隙片(既定厚度之金屬性之帶)31B,於在該圖之YZ面內觀察時,將壓印滾筒設置部25a之外周面與填隙片(既定厚度之金屬性之帶)31B之外周面之抵接位置設定為光罩M與基板S之間之間距G之大致中間之位置Cx。
Therefore, referring to FIG. 27, an example in which the peripheral speed of the outer peripheral surface of the mask M and the peripheral speed of the outer peripheral surface of the substrate S are the same will be described. FIG. 27 is a modification of the diameter adjustment method of the shims described in FIG. 11 above, and the same components as those in FIG. 23 are marked with the same symbols. The deformed part is as follows: As shown in FIG. 27, a ring-shaped shim (metallic tape of a predetermined thickness) 31B is wound around the portion of the
位置Cx係設定為r11+Mt+G/2作為光罩M之自旋轉軸線AX1之半徑之位置,亦為設定為r2+St+G/2作為壓印滾筒體30之自旋轉軸線AX2之半徑之位置。
The position Cx is set to r11+Mt+G/2 as the radius of the self-rotating axis AX1 of the mask M, and is also set to r2+St+G/2 as the radius of the self-rotating axis AX2 of the
填隙片31B係選擇(準備)如滿足此種條件之厚度者,而捲繞於基板保持面31之外周面上,但於其厚度可固定之情形時,只要將基板保持面31之與壓印滾筒設置部25a抵接之部分之直徑加工成r2+St+G/2即可。又,於能夠可更換地捲繞填隙片31B之情形時,可根據基板S之厚度St或間距G之尺寸之變更,而換貼上最佳厚度之填隙片31B。
The
且說,若連續地進行上述曝光處理,則會於由照明光照明之保持部本體22中產生熱膨脹。關於保持部本體22之直徑方向之熱膨脹,由於自外周側保持保持部本體22之保持具23係由金屬材料形成且線膨脹係數大於保持部本體22之線膨脹係數,容許熱膨脹而不會約束保持部本體22,故而可避免對保持部本體22施加較大之負載。又,此時,雖然保持部本體22與保持具23沿著分離之方向熱膨脹,但由於接著劑23a具備彈性接著性能,故而亦可防止保持具23對保持部本體22之保持鬆弛。
In addition, if the above-mentioned exposure processing is continuously performed, thermal expansion occurs in the holding portion
再者,於保持具23之線膨脹係數小於保持部本體22之線膨脹係數之情形時,較佳為選擇保持具23自內周側保持保持部本體22之構成,但即使為自外周側進行保持之構成,亦可藉由上述接著劑23a進行彈性變形,而緩和於熱膨脹時對保持部本體22施加之負載。
Furthermore, when the coefficient of linear expansion of the
又,於保持部本體22沿著旋轉軸線AX1方向發生熱膨脹時,板彈簧24以藉由間隔件24A而固定之部位為基點,使藉由間隔件24B而固定之部位沿著朝向轉動體25之方向彈性變形。如此,藉由板彈簧24之彈性變形而容許保持部本體22之熱膨脹,故而避免對保持部本體22施加旋轉軸線AX1方向之較大之負載。
In addition, when the holding portion
如以上所說明般,於本實施形態中,於直徑方向,使具備彈性接著性能之接著劑23a介於保持部本體22與保持具23之間,於旋轉軸線AX1方向,板彈簧24進行彈性變形,藉此容許因溫度變化而產生之熱膨脹。因此,於本實施形態中,伴隨著熱膨脹而對保持部本體22施加之負載得到緩和,故而可抑制因所施加之負載而導致於保持部本體22產生變形等,從而對向基板S之圖案形成造成不良影響之情況。
As described above, in this embodiment, in the diameter direction, the adhesive 23a with elastic adhesive performance is interposed between the
於圖19所示之元件製造系統SYS中,可使用上述基板處理裝置300作為處理裝置U3,故而可降低因溫度變化而導致對向基板S之圖案形成造成之不良影響,因此可製造以高精度形成圖案之元件。
In the device manufacturing system SYS shown in FIG. 19, the above-mentioned
以上,一面參照隨附圖式一面對本發明之較佳之實施形態進行了說明,但當然本發明並不限定於上述例。上述例中所示之各構成構件之諸形狀或組合等為一例,可於不脫離本發明之主旨之範圍內根據設計要求等進行各種變更。 Above, the preferred embodiments of the present invention have been described with reference to the accompanying drawings, but of course, the present invention is not limited to the above-mentioned examples. The shapes or combinations of the constituent members shown in the above examples are just an example, and various changes can be made in accordance with design requirements and the like without departing from the spirit of the present invention.
例如,於上述實施形態中,設為於保持部本體22之外周面保持具有圖案之片材之光罩M之構成,但並不限定於此,亦可為於保持部本體22(透明
圓筒材料)之外周面直接形成光罩圖案之構成。
For example, in the above-mentioned embodiment, the configuration of the mask M holding the patterned sheet on the outer peripheral surface of the holding portion
又,亦可設為使光罩M並非保持於保持部本體22之外周面而係保持於保持部本體22之內周面之構成。進而,亦可為將保持部本體22並非設為圓筒狀而係設為圓柱狀,且照明部10自外周側對保持於外周面上之光罩M照射照明光之構成。
In addition, it is also possible to provide a configuration in which the mask M is not held on the outer peripheral surface of the holding portion
又,於上述實施形態中,設為藉由轉動體25與壓印滾筒體30帶動旋轉(藉由摩擦接觸而旋轉)而使保持部本體22(光罩M)旋轉之構成,但並不限定於此,即使為保持部本體22(光罩M)藉由馬達等驅動裝置而獨立地旋轉之構成亦可應用本發明。
In addition, in the above-mentioned embodiment, the rotating
於該情形時,省略轉動體25之壓印滾筒設置部25a,兩側之轉動體25透過空氣軸承26可旋轉地樞轉支承於設置在曝光裝置之本體之內筒21上,並且與馬達之轉子等結合。馬達之旋轉驅動力係透過轉動體25、板彈簧24、保持具23而傳遞給保持部本體22(光罩M)。
In this case, the impression
即使於此種構成之情形時,於旋轉軸線AX1方向,亦可藉由板彈簧24進行彈性變形,而容許因溫度變化所產生之保持部本體22(光罩M)之熱膨脹,從而緩和於保持部本體22產生無需之應力之情況,且可抑制於保持部本體22產生變形等。
Even in the case of such a configuration, in the direction of the rotation axis AX1, the
10‧‧‧照明部 10‧‧‧Lighting Department
20‧‧‧光罩保持部 20‧‧‧Mask holding part
21‧‧‧內筒 21‧‧‧Inner cylinder
21a‧‧‧開口部 21a‧‧‧Opening
22‧‧‧保持部本體(圖案保持構件) 22‧‧‧Main body of holding part (pattern holding member)
22a‧‧‧光罩保持面(外周面、周面) 22a‧‧‧Mask holding surface (outer peripheral surface, peripheral surface)
23‧‧‧保持具(環狀部) 23‧‧‧Retainer (ring part)
25‧‧‧轉動體(間距形成部、支承構件) 25‧‧‧Rotating body (spacing forming part, supporting member)
25a‧‧‧壓印滾筒設置部 25a‧‧‧Impression Cylinder Setting Section
26‧‧‧空氣軸承 26‧‧‧Air bearing
27‧‧‧支承台 27‧‧‧Support
28‧‧‧板彈簧(伸縮吸收部、彈性構件) 28‧‧‧Leaf spring (expandable absorption part, elastic member)
30‧‧‧壓印滾筒體(基板保持部、環繞保持部、旋轉筒) 30‧‧‧Impression cylinder body (substrate holding part, surrounding holding part, rotating cylinder)
31‧‧‧基板保持面 31‧‧‧Substrate holding surface
32‧‧‧旋轉支承部 32‧‧‧Rotating support part
33‧‧‧驅動裝置 33‧‧‧Drive device
100‧‧‧基板處理裝置 100‧‧‧Substrate processing equipment
AX1‧‧‧旋轉軸線(既定之軸線) AX1‧‧‧Rotation axis (established axis)
AX2‧‧‧旋轉軸線(第2軸線) AX2‧‧‧Rotation axis (2nd axis)
S‧‧‧基板 S‧‧‧Substrate
B‧‧‧基座部 B‧‧‧Base
M‧‧‧光罩 M‧‧‧Mask
MU‧‧‧光罩單元 MU‧‧‧Mask unit
SU‧‧‧基板保持單元 SU‧‧‧Substrate holding unit
AL1、AL2‧‧‧對準顯微鏡 AL1, AL2‧‧‧Align the microscope
X、Y、Z‧‧‧方向 X, Y, Z‧‧‧direction
Claims (14)
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Publication number | Priority date | Publication date | Assignee | Title |
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JP6206398B2 (en) * | 2012-03-15 | 2017-10-04 | 株式会社ニコン | Mask unit, substrate processing apparatus, mask unit manufacturing method, and substrate processing method |
WO2013164939A1 (en) * | 2012-05-01 | 2013-11-07 | 株式会社ニコン | Substrate processing device |
JP6528775B2 (en) * | 2014-09-04 | 2019-06-12 | 株式会社ニコン | Processing system and device manufacturing method |
JP7068904B2 (en) | 2018-04-13 | 2022-05-17 | 京セラ株式会社 | Electromagnetic wave detection device and information acquisition system |
CN111210721B (en) * | 2018-11-21 | 2021-12-14 | 英业达科技有限公司 | Flexible device |
JP7267215B2 (en) * | 2020-01-22 | 2023-05-01 | 東京エレクトロン株式会社 | Conveying device, processing system and conveying method |
CN114609872B (en) * | 2022-03-16 | 2022-12-13 | 东莞市友辉光电科技有限公司 | Light shield bending-resistant method and large-size parallel light exposure machine |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000275865A (en) * | 1999-03-24 | 2000-10-06 | Hitachi Chem Co Ltd | Drum-like exposure device and production of printed circuit board using the device |
US6383690B1 (en) * | 1999-12-09 | 2002-05-07 | Autologic Information International, Inc. | Platemaking system and method using an imaging mask made from photochromic film |
JP2011203311A (en) * | 2010-03-24 | 2011-10-13 | Nikon Corp | Mask holder, cylindrical mask, exposure device, substrate processing device, and device manufacturing method |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54115076A (en) * | 1978-02-28 | 1979-09-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of printing pattern |
JPS54121971A (en) * | 1978-03-15 | 1979-09-21 | Tokyo Shibaura Electric Co | Continuous exposure apparatus for longgsized flexible substrate |
JPS59200419A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | Large area exposure apparatus |
JPS6019037U (en) * | 1983-07-18 | 1985-02-08 | 株式会社リコー | exposure equipment |
JPS62135134U (en) * | 1986-02-18 | 1987-08-25 | ||
JPH0467654U (en) * | 1990-10-24 | 1992-06-16 | ||
JPH0764211A (en) * | 1993-08-30 | 1995-03-10 | Fuji Photo Film Co Ltd | Original supporting structure and original feeding belt for image reader |
JPH0965065A (en) * | 1995-08-18 | 1997-03-07 | Dainippon Screen Mfg Co Ltd | Image input device |
JP3379361B2 (en) * | 1996-12-12 | 2003-02-24 | ウシオ電機株式会社 | Proximity exposure system for sheet-like work |
JP2000075497A (en) * | 1998-08-26 | 2000-03-14 | Adtec Engineeng Co Ltd | Aligner |
JP2000098627A (en) * | 1998-09-25 | 2000-04-07 | Okuma Corp | Exposure method and exposing device |
DE10214543A1 (en) * | 2001-04-27 | 2002-10-31 | Heidelberger Druckmasch Ag | Information transfer arrangement has non-rotating light source in main cylinder directed towards contact gap, and arrangement for selective input of light into photosensitive recording material |
JP2003122019A (en) * | 2001-10-17 | 2003-04-25 | Sony Corp | Method and device for close-up exposure |
JP2005085965A (en) * | 2003-09-08 | 2005-03-31 | Canon Inc | Mask for near field exposure, and method and apparatus for near field exposure |
JP2006098725A (en) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | Correction method of drawing position, and drawing apparatus capable of correcting drawing position |
JP4609756B2 (en) * | 2005-02-23 | 2011-01-12 | 三井造船株式会社 | Mask alignment mechanism for film forming apparatus and film forming apparatus |
JP4849598B2 (en) * | 2006-01-13 | 2012-01-11 | Nskテクノロジー株式会社 | Exposure equipment |
JP2008015314A (en) * | 2006-07-07 | 2008-01-24 | Nsk Ltd | Exposure device |
JP4923820B2 (en) * | 2006-07-26 | 2012-04-25 | 富士ゼロックス株式会社 | Functional material coating apparatus and functional material coating method |
JP2008216653A (en) * | 2007-03-05 | 2008-09-18 | Fujifilm Corp | Photomask holding structure of lithography, and holding method |
US8235695B2 (en) * | 2009-07-17 | 2012-08-07 | Nikon Corporation | Pattern forming device, pattern forming method, and device manufacturing method |
JP2011033907A (en) * | 2009-08-04 | 2011-02-17 | Nikon Corp | Illuminating device, exposure device, illuminating method, exposure method, and method for manufacturing device |
JP2011090172A (en) * | 2009-10-23 | 2011-05-06 | Mesh Kk | Exposure apparatus |
JPWO2011129369A1 (en) * | 2010-04-13 | 2013-07-18 | 株式会社ニコン | Exposure apparatus, substrate processing apparatus, and device manufacturing method |
JP5724564B2 (en) * | 2010-04-13 | 2015-05-27 | 株式会社ニコン | Mask case, mask unit, exposure apparatus, substrate processing apparatus, and device manufacturing method |
JP5234091B2 (en) * | 2010-11-30 | 2013-07-10 | ウシオ電機株式会社 | Light irradiation device |
JP2012220760A (en) * | 2011-04-11 | 2012-11-12 | Shinwa Industry Co Ltd | Cylindrical mask and exposure apparatus using the same |
WO2013035489A1 (en) * | 2011-09-06 | 2013-03-14 | 株式会社ニコン | Substrate processing device |
JP6206398B2 (en) * | 2012-03-15 | 2017-10-04 | 株式会社ニコン | Mask unit, substrate processing apparatus, mask unit manufacturing method, and substrate processing method |
-
2013
- 2013-01-15 JP JP2014504725A patent/JP6206398B2/en active Active
- 2013-01-15 WO PCT/JP2013/050554 patent/WO2013136834A1/en active Application Filing
- 2013-01-16 TW TW102101600A patent/TWI598696B/en active
- 2013-01-16 TW TW106105453A patent/TWI640838B/en active
- 2013-01-16 TW TW107134446A patent/TWI679717B/en active
- 2013-01-16 TW TW108139039A patent/TWI718730B/en active
-
2017
- 2017-02-14 JP JP2017024851A patent/JP6304413B2/en active Active
- 2017-09-06 JP JP2017171149A patent/JP6460188B2/en active Active
-
2018
- 2018-01-23 JP JP2018008555A patent/JP6477932B2/en active Active
- 2018-12-18 JP JP2018236103A patent/JP6642692B2/en active Active
-
2019
- 2019-11-07 JP JP2019202041A patent/JP6933236B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000275865A (en) * | 1999-03-24 | 2000-10-06 | Hitachi Chem Co Ltd | Drum-like exposure device and production of printed circuit board using the device |
US6383690B1 (en) * | 1999-12-09 | 2002-05-07 | Autologic Information International, Inc. | Platemaking system and method using an imaging mask made from photochromic film |
JP2011203311A (en) * | 2010-03-24 | 2011-10-13 | Nikon Corp | Mask holder, cylindrical mask, exposure device, substrate processing device, and device manufacturing method |
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