TWI717561B - 封裝結構及其形成方法 - Google Patents

封裝結構及其形成方法 Download PDF

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TWI717561B
TWI717561B TW106135902A TW106135902A TWI717561B TW I717561 B TWI717561 B TW I717561B TW 106135902 A TW106135902 A TW 106135902A TW 106135902 A TW106135902 A TW 106135902A TW I717561 B TWI717561 B TW I717561B
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Taiwan
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die
dummy
interposer
substrate
electrical connector
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TW106135902A
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TW201818514A (zh
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施應慶
吳集錫
余振華
吳志偉
林俊成
王卜
盧思維
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台灣積體電路製造股份有限公司
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Abstract

一實施例係一種方法，其包含：使用第一電連接器將一第一晶粒接合至一中介層之一第一側；使用第二電連接器將一第二晶粒接合至該中介層之該第一側；使一第一虛設晶粒相鄰於該第二晶粒附著至該中介層之該第一側；使用一囊封劑囊封該第一晶粒、該第二晶粒及該第一虛設晶粒；及單粒化該中介層及該第一虛設晶粒以形成一封裝結構。

Description

封裝結構及其形成方法
本發明實施例係關於封裝結構及其形成方法。
自發展積體電路(IC)以來，半導體工業已歸因於各種電子組件(即，電晶體、二極體、電阻器、電容器等等)之整合密度不斷提高而經歷持續快速增長。此等整合密度提高多半源於最小構件大小反覆減小，此允許將更多組件整合至一給定區域中。 此等整合提高基本上具二維(2D)性，因為由積體組件佔據之區域基本上位於半導體晶圓之表面上。積體電路之密度增大及對應面積減小一般已超越將一積體電路晶片直接接合至一基板上之能力。中介層已用於將球接觸區域自晶片之區域重佈至中介層之一較大區域。此外，中介層已允許包含多個晶片之三維(3D)封裝。亦已發展其他封裝來併入3D態樣。
根據本發明的一實施例，一種方法包括：使用第一電連接器將一第一晶粒接合至一中介層之一第一側；使用第二電連接器將一第二晶粒接合至該中介層之該第一側；使一第一虛設晶粒相鄰於該第二晶粒附著至該中介層之該第一側；使用一囊封劑囊封該第一晶粒、該第二晶粒及該第一虛設晶粒；及單粒化該中介層及該第一虛設晶粒以形成一封裝結構。 根據本發明的一實施例，一種方法包括：使貫穿通路形成於一基板中；使一第一重佈結構形成於該基板之一第一側上，該第一重佈結構經電耦合至該等貫穿通路；使用第一電連接器將一邏輯晶粒接合至該第一重佈結構，該等第一電連接器經電耦合至該第一重佈結構；使用第二電連接器將一記憶體晶粒堆疊接合至該第一重佈結構，該記憶體晶粒堆疊相鄰於該邏輯晶粒，該等第二電連接器經電耦合至該第一重佈結構；使一虛設晶粒相鄰於該記憶體晶粒堆疊附著於切割道區域中之該第一重佈結構上方；及單粒化該基板、該第一重佈結構及該虛設晶粒以形成一封裝結構。 根據本發明的一實施例，一種結構包括：一中介層之一第一側，其經接合至一基板；一邏輯晶粒及一記憶體堆疊，其等經接合至該中介層之一第二側，該第二側與該第一側對置；一虛設晶粒，其經附著至該中介層之該第二側，該虛設晶粒相鄰於該邏輯晶粒或該記憶體堆疊；及一模製材料，其沿該邏輯晶粒、該記憶體堆疊及該虛設晶粒之側壁延伸，透過該模製材料曝露該邏輯晶粒及該虛設晶粒之頂面。
以下揭露提供用於實施本揭露之不同特徵的諸多不同實施例或實例。下文將描述組件及配置之具體實例以簡化本揭露。當然，此等僅為實例且不意在限制。例如，在以下描述中，「使一第一構件形成於一第二構件上方或一第二構件上」可包含其中形成直接接觸之該第一構件及該第二構件的實施例，且亦可包含其中額外構件可形成於該第一構件與該第二構件之間使得該第一構件及該第二構件可不直接接觸的實施例。另外，本揭露可在各種實例中重複元件符號及/或字母。此重複旨在簡化及清楚且其本身不指示所討論之各種實施例及/或組態之間的一關係。 此外，為了方便描述，可在本文中使用空間相對術語(諸如「下面」、「下方」、「下」、「上方」、「上」及其類似者)來描述一元件或構件與另一(些)元件或構件之關係，如圖中所繪示。除圖中所描繪之定向之外，空間相對術語亦意欲涵蓋裝置在使用或操作中之不同定向。設備可依其他方式定向(旋轉90度或依其他定向)，且亦可據此解譯本文中所使用之空間相對描述詞。 可在一特定背景(即，一封裝結構，其包含相鄰於主動晶粒之虛設晶粒結構來減少該封裝結構之翹曲)中討論本文中所討論之實施例。該封裝結構之此翹曲減少藉由減小主動晶粒與中介層之間冷結合的可能性來實現一更可靠封裝結構。在一些實施例中，該等虛設晶粒沿該封裝結構之周邊，諸如，在切割道區域中或其附近。 將相對於一特定背景(即，使用基板上覆晶圓上覆晶片(CoWoS)處理之一晶粒-中介層-基板堆疊封裝)來描述實施例。然而，亦可將其他實施例應用於其他封裝(諸如一晶粒-晶粒-基板堆疊封裝)及其他處理。本文中所討論之實施例將提供能夠製造或使用本揭露之標的的實例，且一般技術者將輕易瞭解可在不同實施例之考量範疇內作出之修改。下圖中之相同元件符號及字元係指相同組件。雖然方法實施例可經討論為依一特定順序執行，但其他方法實施例可依任何邏輯順序執行。 圖1繪示一或多個晶粒68之形成。晶粒68之一主體60可包括任何數目個晶粒、基板、電晶體、主動裝置、被動裝置或其類似者。在一實施例中，主體60可包含一塊狀半導體基板、絕緣體上覆半導體(SOI)基板、多層半導體基板或其類似者。主體60之半導體材料可為矽、鍺、一化合物半導體(其包含矽鍺、碳化矽、鎵砷、磷化鎵、磷化銦、砷化銦及/或銻化銦)、一合金半導體(其包含SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP)或其等之組合。亦可使用諸如多層或梯度基板之其他基板。主體60可經摻雜或未經摻雜。諸如電晶體、電容器、電阻器、二極體及其類似者之裝置可經形成於一主動表面62中及/或其上。 包括一或多個介電層及各自金屬化圖案之一互連結構64經形成於主動表面62上。該(該)介電層中之金屬化圖案可(諸如)藉由使用通路及/或跡線來使電信號選路於裝置之間，且亦可含有諸如電容器、電阻器、電感器或其類似者之各種電裝置。該等各種裝置及金屬化圖案可經互連以執行一或多個功能。該等功能可包含記憶體結構、處理結構、感測器、放大器、電力分配、輸入/輸出電路或其類似者。另外，諸如導電柱之晶粒連接器66 (例如，包括諸如銅之一金屬)經形成於互連結構64中及/或其上以對電路及裝置提供一外部電連接。在一些實施例中，晶粒連接器66自互連結構64突出以形成待在將晶粒68接合至其他結構時利用之柱結構。一般技術者應瞭解，以上實例僅供說明。可針對一給定應用適當使用其他電路。 更特定而言，一金屬間介電(IMD)層可經形成於互連結構64中。藉由此項技術中已知之任何適合方法(諸如旋塗、化學氣相沈積(CVD)、電漿增強CVD (PECVD)、高密度電漿化學氣相沈積(HDP-CVD)或其類似者)，IMD層可由(例如)一低介電係數材料(諸如磷矽酸鹽玻璃(PSG)、硼磷矽酸鹽玻璃(BPSG)、氟矽酸鹽玻璃(FSG)、SiOx Cy 、旋塗式玻璃、旋塗式聚合物、矽碳材料、其等之化合物、其等之複合物、其等之組合或其類似者)形成。可(例如)藉由使用光微影技術將一光阻材料沈積且圖案化於IMD層上以曝露將變成一金屬化圖案之IMD層之部分來使該金屬化圖案形成於IMD層中。諸如一各向異性乾式蝕刻程序之一蝕刻程序可用於在IMD層中產生對應於IMD層之曝露部分的凹口及/或開口。凹口及/或開口可內襯有一擴散障壁層且填充有一導電材料。擴散障壁層可包括藉由原子層沈積(ALD)或其類似者所沈積之一或多層氮化鉭、鉭、氮化鈦、鈦、鈷鎢、類似者或其等之一組合。金屬化圖案之導電材料可包括藉由CVD、物理氣相沈積(PVD)或其類似者所沈積之銅、鋁、鎢、銀及其等之組合或其類似者。可(諸如)藉由使用一化學機械拋光(CMP)來移除IMD層上之任何過量擴散障壁層及/或導電材料。 在圖2中，將包含互連結構64之主體60單粒化成個別晶粒68。通常，晶粒68含有諸如裝置及金屬化圖案之相同電路，但晶粒可具有不同電路。單粒化可包含鋸切、切割或其類似者。 晶粒68之各者可包含一或多個邏輯晶粒(例如中央處理單元、圖形處理單元、系統單晶片、場可程式化閘陣列(FPGA)、微控制器或其類似者)、記憶體晶粒(例如動態隨機存取記憶體(DRAM)晶粒、靜態隨機存取記憶體(SRAM)晶粒或其類似者)、電源管理晶粒(例如電源管理積體電路(PMIC)晶粒)、射頻(RF)晶粒、感測器晶粒、微機電系統(MEMS)晶粒、信號處理晶粒(例如數位信號處理(DSP)晶粒)、前端晶粒(例如類比前端(AFE)晶粒)、類似者或其等之一組合。此外，在一些實施例中，晶粒68可為不同大小(例如不同高度及/或表面積)，且在其他實施例中，晶粒68可為相同大小(例如相同高度及/或表面積)。 圖3繪示組件96 (參閱圖13)之一第一側之形成。一基板70包括處理期間之一或多個組件96。組件96可為一中介層或另一晶粒。基板70可為一晶圓。基板70可包括一塊狀半導體基板、SOI基板、多層半導體基板或其類似者。基板70之半導體材料可為矽、鍺、一化合物半導體(其包含矽鍺、碳化矽、鎵砷、磷化鎵、磷化銦、砷化銦及/或銻化銦)、一合金半導體(其包含SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP)或其等之組合。亦可使用諸如多層或梯度基板之其他基板。基板70可經摻雜或未經摻雜。諸如電晶體、電容器、電阻器、二極體及其類似者之裝置可經形成於基板70之一第一表面72 (其亦可指稱一主動表面)中及/或其上。在其中組件96係一中介層之實施例中，組件96一般不會在其內包含主動裝置，但中介層可包含經形成於一第一表面72中及/或其上之被動裝置。 貫穿通路(TV) 74經形成以自基板70之第一表面72延伸至基板70中。有時在基板70係一矽基板時亦將TV 74指稱貫穿基板通路或貫穿矽通路。藉由(例如)蝕刻、銑削、雷射技術、其等之一組合及/或其類似者，可藉由使凹口形成於基板70中來形成TV 74。可(諸如)藉由使用氧化技術來使一薄介電材料形成於凹口中。可(諸如)藉由CVD、ALD、PVD、熱氧化、其等之一組合及/或其類似者來將一薄障壁層保形地沈積於基板70之前側上方及開口中。障壁層可包括氮化物或氮氧化物，諸如氮化鈦、氮氧化鈦、氮化鉭、氮氧化鉭、氮化鎢、其等之一組合及/或其類似者。可將一導電材料沈積於薄障壁層上方及開口中。可藉由一電化學電鍍程序、CVD、ALD、PVD、其等之一組合及/或其類似者來形成導電材料。導電材料之實例係銅、鎢、鋁、銀、金、其等之一組合及/或其類似者。藉由(例如) CMP來自基板70之前側移除過量導電材料及障壁層。因此，TV 74可包括一導電材料及該導電材料與基板70之間的一薄障壁層。 重佈結構76經形成於基板70之第一表面72上方，且用於將積體電路裝置(若存在)及/或TV 74電連接在一起及/或電連接至外部裝置。重佈結構76可包含一或多個介電層及該(等)介電層中之各自金屬化圖案。金屬化圖案可包括用於將任何裝置及/或TV 74互連在一起及/或互連至一外部裝置之通路及/或跡線。金屬化圖案有時指稱重佈線(RDL)。介電層可包括氧化矽、氮化矽、碳化矽、氮氧化矽、低介電係數材料(諸如PSG、BPSG、FSG、SiOx Cy 、旋塗式玻璃、旋塗式聚合物、矽碳材料、其等之化合物、其等之複合物、其等之組合或其類似者)。可藉由此項技術中已知之任何適合方法(諸如旋塗、CVD、PECVD、HDP-CVD或其類似者)來沈積介電層。可(例如)藉由使用光微影技術將一光阻材料沈積且圖案化於介電層上以曝露將變成一金屬化圖案之介電層之部分來使該金屬化圖案形成於介電層中。諸如一各向異性乾式蝕刻程序之一蝕刻程序可用於在介電層中產生對應於介電層之曝露部分的凹口及/或開口。凹口及/或開口可內襯有一擴散障壁層且填充有一導電材料。擴散障壁層可包括藉由ALD或其類似者所沈積之一或多層TaN、Ta、TiN、Ti、CoW或其類似者，且導電材料可包括藉由CVD、PVC或其類似者所沈積之銅、鋁、鎢、銀及其等之組合或其類似者。可(諸如)藉由使用一CMP來移除介電層上之任何過量擴散障壁層及/或導電材料。 電連接器77/78經形成於導電襯墊上之重佈結構76之頂面處。在一些實施例中，導電襯墊包含凸塊下金屬(UBM)。在所繪示實施例中，襯墊經形成於重佈結構76之介電層之開口中。在另一實施例中，襯墊(UBM)可延伸貫穿重佈結構76之一介電層之一開口且亦跨重佈結構76之頂面延伸。作為形成襯墊之一實例，一晶種層(圖中未展示)至少形成於重佈結構76之介電層中之開口中。在一些實施例中，晶種層係一金屬層，其可為一單一層或包括由不同材料形成之複數個子層的一複合層。在一些實施例中，晶種層包括一鈦層及該鈦層上方之一銅層。可使用(例如) PVD或其類似者來形成晶種層。接著，一光阻層經形成且圖案化於晶種層上。光阻層可藉由旋塗或其類似者來形成且可經曝光以圖案化。光阻層之圖案對應於襯墊。圖案化形成貫穿光阻層以曝露晶種層之開口。一導電材料經形成於光阻層之開口中及晶種層之曝露部分上。可藉由鍍覆(諸如電鍍或無電電鍍或其類似者)來形成導電材料。導電材料可包括一金屬，如銅、鈦、鎢、鋁或其類似者。接著，移除光阻層及其上未形成導電材料之晶種層之部分。可藉由一可接受灰化或剝離程序(諸如，使用氧電漿或其類似者)來移除光阻層。一旦已移除光阻層，則(諸如)藉由使用一可接受蝕刻程序(諸如，藉由濕式或乾式蝕刻)來移除晶種層之曝露部分。晶種層之剩餘部分及導電材料形成襯墊。在其中依不同方式形成襯墊之實施例中，可利用更多光阻層及圖案化步驟。 在一些實施例中，電連接器77/78包含一金屬柱77及金屬柱77上方之一金屬帽層78 (其可為一焊料帽)。包含柱77及帽層78之電連接器77/78有時指稱微凸塊77/78。在一些實施例中，金屬柱77包含諸如銅、鋁、金、鎳、鈀、類似者或其等之一組合的一導電材料且可藉由濺鍍、印刷、電鍍、無電電鍍、CVD或其類似者來形成。金屬柱77可不含焊料且具有實質上垂直側壁。在一些實施例中，一金屬帽層78經形成於金屬柱77之頂部上。金屬帽層78可包含鎳、錫、錫鉛、金、銅、銀、鈀、銦、鎳鈀金、鎳金、類似者或其等之一組合且可藉由一鍍覆程序來形成。 在另一實施例中，電連接器77/78不包含金屬柱且係焊球及/或凸塊，諸如受控倒疊晶片連接(C4)、無電鍍鎳浸金(ENIG)、無電鍍鎳無電鍍鈀浸金技術(ENEPIG)形成凸塊或其類似者。在此實施例中，凸塊電連接器77/78可包含諸如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似者或其等之一組合的一導電材料。在此實施例中，藉由首先透過此等常用方法(諸如蒸鍍、電鍍、印刷、焊料轉移、植球或其類似者)形成一焊料層來形成電連接器77/78。一旦一焊料層已形成於結構上，則可執行一回焊以將材料塑形成所要凸塊形狀。 在圖4中，(例如)透過藉由電連接器77/78及晶粒上之金屬柱79之覆晶接合來將晶粒68及晶粒88附著至組件96之第一側以形成導電接頭91。金屬柱79可類似於金屬柱77且本文中不再重複描述。可使用(例如)一取置工具來將晶粒68及晶粒88放置於電連接器77/78上。在一些實施例中，金屬帽層78經形成於金屬柱77 (如圖3中所展示)、晶粒68及晶粒88之金屬柱79或兩者上。 可透過類似於上文參考晶粒68所描述之處理的處理來形成晶粒88。在一些實施例中，晶粒88包含一或多個記憶體晶粒，諸如一記憶體晶粒堆疊(例如DRAM晶粒、SRAM晶粒、高頻寬記憶體(HBM)晶粒、混合記憶體立方體(HMC)晶粒或其類似者)。在記憶體晶粒堆疊實施例中，一晶粒88可包含記憶體晶粒及一記憶體控制器兩者，諸如(例如)四個或八個記憶體晶粒與一記憶體控制器之一堆疊。此外，在一些實施例中，晶粒88可為不同大小(例如不同高度及/或表面積)，且在其他實施例中，晶粒88可為相同大小(例如相同高度及/或表面積)。 在一些實施例中，晶粒88可具有類似於晶粒68之高度的高度(如圖4中所展示)，或在一些實施例中，晶粒68及88可具有不同高度。 晶粒88包含一主體80、一互連結構84及晶粒連接器86。晶粒88之主體80可包括任何數目個晶粒、基板、電晶體、主動裝置、被動裝置或其類似者。在一實施例中，主體80可包含一塊狀半導體基板、絕緣體上覆半導體(SOI)基板、多層半導體基板或其類似者。主體80之半導體材料可為矽、鍺、一化合物半導體(其包含矽鍺、碳化矽、鎵砷、磷化鎵、磷化銦、砷化銦及/或銻化銦)、一合金半導體(其包含SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP)或其等之組合。亦可使用諸如多層或梯度基板之其他基板。主體80可經摻雜或未經摻雜。諸如電晶體、電容器、電阻器、二極體及其類似者之裝置可經形成於一主動表面中及/或其上。 包括一或多個介電層及各自金屬化圖案之一互連結構84經形成於主動表面上。(若干)介電層中之金屬化圖案可(諸如)藉由使用通路及/或跡線來使電信號選路於裝置之間，且亦可含有諸如電容器、電阻器、電感器或其類似者之各種電裝置。各種裝置及金屬化圖案可經互連以執行一或多個功能。功能可包含記憶體結構、處理結構、感測器、放大器、電力分配、輸入/輸出電路或其類似者。另外，諸如導電柱之晶粒連接器86 (例如，包括諸如銅之一金屬)經形成於互連結構84中及/或其上以對電路及裝置提供一外部電連接。在一些實施例中，晶粒連接器86自互連結構84突出以形成待在將晶粒88接合至其他結構時利用之柱結構。一般技術者應瞭解，以上實例僅供說明。可針對一給定應用適當使用其他電路。 更特定而言，一IMD層可經形成於互連結構84中。藉由此項技術中已知之任何適合方法(諸如旋塗、CVD、PECVD、HDP-CVD或其類似者)，IMD層可由(例如)一低介電係數材料(諸如PSG、BPSG、FSG、SiOx Cy 、旋塗式玻璃、旋塗式聚合物、矽碳材料、其等之化合物、其等之複合物、其等之組合或其類似者)形成。可(例如)藉由使用光微影技術將一光阻材料沈積且圖案化於IMD層上以曝露將變成一金屬化圖案之IMD層之部分來使該金屬化圖案形成於IMD層中。諸如一各向異性乾式蝕刻程序之一蝕刻程序可用於在IMD層中產生對應於IMD層之曝露部分的凹口及/或開口。凹口及/或開口可內襯有一擴散障壁層且填充有一導電材料。擴散障壁層可包括藉由ALD或其類似者所沈積之一或多層氮化鉭、鉭、氮化鈦、鈦、鈷鎢、類似者或其等之一組合。金屬化圖案之導電材料可包括藉由CVD、PVD或其類似者所沈積之銅、鋁、鎢、銀及其等之組合或其類似者。可(諸如)藉由使用一CMP來移除IMD層上之任何過量擴散障壁層及/或導電材料。 在其中晶粒連接器66及86分別自互連結構64及84突出之實施例中，由於突出晶粒連接器66及86可用作金屬帽層78之柱，所以可自晶粒68及88排除金屬柱79。 導電接頭91透過互連結構84及64及晶粒連接器86及66將晶粒68及晶粒88中之電路分別電耦合至組件96中之重佈結構76及TV 74。 在一些實施例中，在接合電連接器77/78之前，使用一助焊劑(圖中未展示)(諸如一免清洗助焊劑)塗覆電連接器77/78。可將電連接器77/78浸漬於助焊劑中或可將助焊劑噴射至電連接器77/78上。在另一實施例中，亦可將助焊劑施加於電連接器79/78。在一些實施例中，在使用將晶粒68及晶粒88附著至組件96之後剩餘之環氧樹脂助焊劑之至少一些環氧樹脂部分回焊電連接器77/78及/或79/78之前，電連接器77/78及/或79/78可具有形成於其上之一環氧樹脂助焊劑(圖中未展示)。此剩餘環氧樹脂部分可充當一底部填膠以減小應力且保護由回焊電連接器77/78/79所致之接頭。 晶粒68及88與組件96之間的接合可為一焊料接合或一直接金屬與金屬(諸如一銅與銅或錫與錫)接合。在一實施例中，藉由一回焊程序將晶粒68及晶粒88接合至組件96。在此回焊程序期間，電連接器77/78/79與各自晶粒連接器66及86及重佈結構76之襯墊接觸以將晶粒68及晶粒88實體及電耦合至組件96。在接合程序之後，一IMC (圖中未展示)可形成於金屬柱77及79與金屬帽層78之界面處。 圖4及後續圖中繪示分別用於形成一第一封裝及一第二封裝之一第一封裝區域90及一第二封裝區域92。切割道區域94位於相鄰封裝區域之間。如圖4中所繪示，一第一晶粒及多個第二晶粒經附著於第一封裝區域90及第二封裝區域92之各者中。 在一些實施例中，晶粒68係系統單晶片(SoC)或一圖形處理單元(GPU)且第二晶粒係可由晶粒68利用之記憶體晶粒。在一實施例中，晶粒88係堆疊記憶體晶粒。例如，堆疊記憶體晶粒88可包含低功率(LP)雙倍資料速率(DDR)記憶體模組，諸如LPDDR1、LPDDR2、LPDDR3、LPDDR4或類似記憶體模組。 在圖5中，將一底部填膠材料100施配至晶粒68、晶粒88及重佈結構76之間的間隙中。底部填膠材料100可沿晶粒68及晶粒88之側壁向上延伸。底部填膠材料100可為任何可接受材料，諸如聚合物、環氧樹脂、模製底部填膠或其類似者。底部填膠材料100可在附著晶粒68及88之後藉由一毛細管流動程序來形成或可在附著晶粒68及88之前藉由一適合沈積方法來形成。 圖6A、圖6B、圖6C、圖6D、圖6E及圖6F繪示包含黏著至組件96之虛設晶粒106之封裝結構之平面圖。圖7係繪示封裝結構中之虛設晶粒106的一橫截面圖。圖7係沿圖6C之平面圖之線A-A。可藉由使用(例如)一取置工具將虛設晶粒106放置於組件96上。 在圖6A中，虛設晶粒106經附著於切割道區域94中且沿著沿一第一方向(例如圖6A之垂直方向)之切割道區域94延伸。在圖6B中，虛設晶粒106經附著於相同區域90及/或92之相鄰晶粒88之間。在圖6C中，虛設晶粒106經附著於切割道區域94中且沿著沿一第一方向及第二方向(例如圖6C之垂直方向及水平方向兩者)之切割道區域94延伸，且亦中介於相同區域90及/或92之相鄰晶粒88之間。 在圖6D中，虛設晶粒106經附著於相同區域90及/或92之相鄰晶粒88之間，且不位於切割道區域94中，而是靠近切割道區域94。在圖6E中，除虛設晶粒106亦經附著成靠近相鄰於晶粒88之區域90及/或92之角隅之外，虛設晶粒106之組態類似於圖6D之組態。再者，在此實施例中，虛設晶粒106不位於切割道區域94中，而是靠近切割道區域94。在圖6F中，虛設晶粒106經附著成靠近相鄰於晶粒88之區域90及/或92之角隅，且不位於切割道區域94中，而是靠近切割道區域94。 將虛設晶粒106放置於切割道區域94中或其附近可有助於防止在單粒化第一封裝區域90及第二封裝區域92中之封裝(參閱圖13)期間及其之後出現翹曲。例如，與無任何虛設晶粒106之一封裝相比，圖6C之實施例(及後文將討論之圖15C中之經單粒化封裝)可將封裝之翹曲減少高達約60%。 虛設晶粒106可有助於減少翹曲之一方式係在實際單粒化程序期間對封裝提供支撐。虛設晶粒106可防止翹曲之另一方式係減少組件96與隨後形成之囊封劑112 (參閱圖8)之間的熱膨脹係數(CTE)失配，此係因為虛設晶粒106具有類似於組件96之一CTE且其減少封裝中所需之囊封劑112數量。 參考圖7，虛設晶粒106經黏著於相鄰於晶粒88之切割道區域94中。藉由一附著結構104將虛設晶粒106附著至組件96。在一些實施例中，附著結構104係將虛設晶粒106黏著至組件96之一黏著劑。在一些實施例中，附著結構104係具有將虛設晶粒106接合至組件之金屬帽層(有時指稱微凸塊)的一或多個金屬柱。虛設晶粒106可由矽、一介電材料、類似者或其等之一組合製成。在一些實施例中，虛設晶粒106實際上為已被回收利用為虛設晶粒106之缺陷主動晶粒。在一些實施例中，虛設晶粒106之頂面與晶粒68之背面齊平。 在黏著劑附著結構104實施例中，黏著劑104位於虛設晶粒106之底面上且將虛設晶粒106黏著至組件96，諸如說明圖中之重佈結構76。黏著劑104可為任何適合黏著劑、環氧樹脂、晶粒附著膜(DAF)或其類似者。黏著劑104可經施加於虛設晶粒106之一底面或可經施加於重佈結構76之表面上方。可使用(例如)一取置工具來藉由黏著劑104將虛設晶粒106黏著至重佈結構76。可在黏著虛設晶粒106之前或其之後固化底部填膠100。 在微凸塊附著結構104實施例中，微凸塊104經形成於虛設晶粒106之底面、組件96之頂面或兩者上。微凸塊104可與接合晶粒68及88之微凸塊(例如電連接器77/78)同時形成。微凸塊104將虛設晶粒106接合至組件96，諸如說明圖中之重佈結構76。虛設晶粒106之微凸塊104可與晶粒68及88之電連接器77/78/79/78一起回焊。可藉由使用(例如)一取置工具來將虛設晶粒106放置於微凸塊104上。可在接合虛設晶粒106之前或其之後固化底部填膠100。 在圖8中，一囊封劑112經形成於各種組件上。囊封劑112可為一模製化合物、環氧樹脂或其類似者，且可藉由壓縮模製、轉移模製或其類似者來施加。執行諸如一熱固化、一紫外線(UV)固化或其類似者之一固化步驟以固化囊封劑112。在一些實施例中，晶粒68、晶粒88及虛設晶粒106經內埋於囊封劑112中，且在固化囊封劑112之後，可執行諸如一研磨之一平坦化步驟以移除囊封劑112之過量部分，該等過量部分位於晶粒68、晶粒88及虛設晶粒106之頂面上方。據此，晶粒68、晶粒88及虛設晶粒106之頂面被曝露且與囊封劑112之一頂面齊平。在一些實施例中，晶粒88及/或虛設晶粒106可具有不同於晶粒68之高度且晶粒88及/或晶粒106將在平坦化步驟之後仍由囊封劑112覆蓋。在一些實施例中，晶粒106具有大於晶粒68及88兩者之一高度，且晶粒68及88兩者在平坦化步驟之後仍由囊封劑112覆蓋。 圖9至圖12繪示組件96之第二側之形成。在圖9中，翻轉圖8之結構以準備形成組件96之第二側。雖然圖中未展示，但可針對圖9至圖12之程序將結構放置於載體或支撐結構上。如圖9中所展示，在此處理階段中，基板70及組件96之重佈結構76具有自約50 µm至約775 µm之一範圍內的一結合厚度T1，諸如約775 µm。虛設晶粒106 (其包含附著結構104)具有自約30 µm至約775 µm之一範圍內的一厚度T2，諸如約760 µm。在一些實施例中，晶粒68及88之一或兩者(其包含導電接頭91)具有厚度T2。 在圖10中，對基板70之第二側執行一薄化程序以將基板70薄化至一第二表面116，直至曝露TV 74。薄化程序可包含一蝕刻程序、一研磨程序、類似者或其等之一組合。在一些實施例中，在薄化程序之後，基板70及組件96之重佈結構76具有自約30 µm至約200 µm之一範圍內的一結合厚度T3，諸如約100 µm。 在圖11中，一重佈結構經形成於基板70之第二表面116上，且用於將TV 74電連接在一起及/或電連接至外部裝置。重佈結構包含一或多個介電層117及一或多個介電層117中之金屬化圖案118。金屬化圖案可包括用於將TV 74互連在一起及/或互連至一外部裝置之通路及/或跡線。金屬化圖案118有時指稱重佈線(RDL)。介電層117可包括氧化矽、氮化矽、碳化矽、氮氧化矽、低介電係數材料(諸如PSG、BPSG、FSG、SiOx Cy 、旋塗式玻璃、旋塗式聚合物、矽碳材料、其等之化合物、其等之複合物、其等之組合或其類似者)。可藉由此項技術中已知之任何適合方法(諸如旋塗、CVD、PECVD、HDP-CVD或其類似者)來沈積介電層117。可(例如)藉由使用光微影技術將一光阻材料沈積且圖案化於介電層117上以曝露將變成金屬化圖案118之介電層117之部分來使金屬化圖案118形成於介電層117中。諸如一各向異性乾式蝕刻程序之一蝕刻程序可用於在介電層117中產生對應於介電層117之曝露部分的凹口及/或開口。凹口及/或開口可內襯有一擴散障壁層且填充有一導電材料。擴散障壁層可包括藉由ALD或其類似者所沈積之一或多層TaN、Ta、TiN、Ti、CoW或其類似者，且導電材料可包括藉由CVD、PVD、鍍覆或其類似者所沈積之銅、鋁、鎢、銀及其等之組合或其類似者。可(諸如)藉由使用一CMP來移除介電層上之任何過量擴散障壁層及/或導電材料。 在圖12中，電連接器120亦經形成於金屬化圖案118上且經電耦合至TV 74。電連接器120經形成於金屬化圖案118上之重佈結構之頂面處。在一些實施例中，金屬化圖案118包含UBM。在所繪示實施例中，襯墊經形成於重佈結構之介電層117之開口中。在另一實施例中，襯墊(UBM)可延伸貫穿重佈結構之一介電層117之一開口且亦跨重佈結構之頂面延伸。 作為形成襯墊之一實例，一晶種層(圖中未展示)至少形成於重佈結構之介電層117之一者中的開口中。在一些實施例中，晶種層係一金屬層，其可為一單一層或包括由不同材料形成之複數個子層的一複合層。在一些實施例中，晶種層包括一鈦層及該鈦層上方之一銅層。可使用(例如) PVD或其類似者來形成晶種層。接著，一光阻層經形成且圖案化於晶種層上。光阻層可藉由旋塗或其類似者來形成且可經曝光以圖案化。光阻層之圖案對應於襯墊。圖案化形成貫穿光阻層以曝露晶種層之開口。一導電材料經形成於光阻層之開口中及晶種層之曝露部分上。可藉由鍍覆(諸如電鍍或無電電鍍或其類似者)來形成導電材料。導電材料可包括一金屬，如銅、鈦、鎢、鋁或其類似者。接著，移除光阻層及其上未形成導電材料之晶種層之部分。可藉由一可接受灰化或剝離程序(諸如，使用氧電漿或其類似者)來移除光阻層。一旦已移除光阻層，則(諸如)藉由使用一可接受蝕刻程序(諸如，藉由濕式或乾式蝕刻)來移除晶種層之曝露部分。晶種層之剩餘部分及導電材料形成襯墊。在其中依不同方式形成襯墊之實施例中，可利用更多光阻層及圖案化步驟。 在一些實施例中，電連接器120係焊球及/或凸塊，諸如球柵陣列(BGA)球、C4微凸塊、ENIG形成凸塊、ENEPIG形成凸塊或其類似者。電連接器120可包含諸如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似者或其等之一組合的一導電材料。在一些實施例中，藉由首先透過此等常用方法(諸如蒸鍍、電鍍、印刷、焊料轉移、植球或其類似者)形成一焊料層來形成電連接器120。一旦一焊料層已形成於結構上，則可執行一回焊以將材料塑形成所要凸塊形狀。在另一實施例中，電連接器120係藉由濺鍍、印刷、電鍍、無電電鍍、CVD或其類似者所形成之金屬柱(諸如一銅柱)。金屬柱可不含焊料且具有實質上垂直側壁。在一些實施例中，一金屬帽層(圖中未展示)經形成於金屬柱連接器120之頂部上。金屬帽層可包含鎳、錫、錫鉛、金、銀、鈀、銦、鎳鈀金、鎳金、類似者或其等之一組合且可藉由一鍍覆程序來形成。 電連接器120可用於接合至一額外電組件，該額外電組件可為一半導體基板、一封裝基板、一印刷電路板(PCB)或其類似者(參閱圖14中之300)。 在圖13中，沿相鄰區域90與92之間的切割道區域94單粒化組件96及虛設晶粒106以形成尤其包括一晶粒68、一組件96、晶粒88及虛設晶粒106之部分106'的組件封裝200。單粒化可藉由鋸切、切割或其類似者。如上文所討論，虛設晶粒106有助於減小單粒化程序期間及其之後所引起之應力及翹曲。 在單粒化程序之後，虛設晶粒106之剩餘部分106'具有與組件封裝200之側向範圍毗連的側壁表面(參閱(例如)圖13及圖14)。 圖14繪示一組件封裝200於一基板300上之附著。電連接器120對準於且抵著基板300之接合襯墊。電連接器120可經回焊以在基板300與組件96之間產生一接合。基板300可包括一封裝基板，諸如其內包含一核心之一堆積基板、包含複數個層疊介電膜之一層疊基板、一PCB或其類似者。基板300可包括諸如焊球之電連接器(圖中未展示)，其與組件封裝對置以允許基板300安裝至另一裝置。一底部填膠材料(圖中未展示)可經施配於組件封裝200與基板300之間且包圍電連接器120。底部填膠材料可為諸如聚合物、環氧樹脂、模製底部填膠或其類似者之任何可接受材料。 另外，一或多個表面裝置140可經連接至基板300。表面裝置140可用於對組件封裝200或整個封裝提供額外功能或程式化。在一實施例中，表面裝置140可包含表面安裝裝置(SMD)或積體被動裝置(IPD)，其包含期望連接至組件封裝200或封裝之其他部分且與組件封裝200或封裝之其他部分一起使用之被動裝置，諸如電阻器、電感器、電容器、跨接器、此等之組合或其類似者。根據各種實施例，表面裝置140可經放置於基板300之一第一主表面、基板300之一對置主表面或兩者上。 圖15A、圖15B、圖15C、圖15D、圖15E及圖15F分別繪示圖6A、圖6B、圖6C、圖6D、圖6E及圖6F中所展示之虛設晶粒106實施例之各者中之經單粒化封裝結構之平面圖。此等實施例係對稱的，其中晶粒68具有晶粒68之對置側上的晶粒88及虛設晶粒106。 圖16A、圖16B、圖16C、圖16D、圖16E及圖16F分別繪示圖6A、圖6B、圖6C、圖6D、圖6E及圖6F中所展示之虛設晶粒106實施例之各者之其他實施例中之一經單粒化封裝結構之平面圖。在此等實施例中，經單粒化封裝結構係非對稱的，因為晶粒88及虛設晶粒106僅位於晶粒68之一側(例如圖16A、圖16B、圖16C、圖16D、圖16E及圖16F中之平面圖之頂側)上。可使用類似於上文圖1至圖5及圖7至圖14中所描述之材料、結構及程序的材料、結構及程序來製造此等封裝結構，且本文中不再重複描述。 圖17A、17B及17C分別繪示類似於圖6A、圖6B及圖6C之一處理點及虛設晶粒106組態之平面圖，只是在此等實施例中，封裝結構之各者中存在更多晶粒88。可使用類似於上文圖1至圖5及圖7至圖14中所描述之材料、結構及程序的材料、結構及程序來製造此等封裝結構，且本文中不再重複描述。 圖17D繪示類似於17A至圖17C中之虛設晶粒組態之一虛設晶粒106組態之另一實施例之一平面圖，只是在此實施例中，虛設晶粒106位於區域90及92內且不位於切割道區域94中。可使用類似於上文圖1至圖5及圖7至圖14中所描述之材料、結構及程序的材料、結構及程序來製造此等封裝結構，且本文中不再重複描述。此類型之組態(例如，在切割道區域94中無虛設晶粒106)亦可應用於上文所描述之先前組態之任何者。 包含相鄰於主動晶粒之虛設晶粒結構的一封裝結構之所揭露實施例可有助於減少封裝結構之翹曲。封裝結構之此翹曲減少藉由減小主動晶粒與中介層之間冷結合的可能性來實現一更可靠封裝結構。例如，與無任何虛設晶粒之一封裝相比，所揭露實施例可將封裝之翹曲減少約60%。在一些實施例中，虛設晶粒位於切割道區域中或其附近以有助於防止封裝單粒化期間及封裝單粒化之後出現翹曲。虛設晶粒可有助於減少翹曲之一方式係在實際單粒化程序期間對封裝提供支撐。虛設晶粒可防止翹曲之另一方式係減少中介層與囊封劑之間的CTE失配，此係因為虛設晶粒具有類似於中介層之一CTE且虛設晶粒減少封裝中所需之囊封劑數量。 在一實施例中，一種方法包含：使用第一電連接器將一第一晶粒接合至一中介層之一第一側；使用第二電連接器將一第二晶粒接合至該中介層之該第一側；使一第一虛設晶粒相鄰於該第二晶粒附著至該中介層之該第一側；使用一囊封劑囊封該第一晶粒、該第二晶粒及該第一虛設晶粒；及單粒化該中介層及該第一虛設晶粒以形成一封裝結構。 實施例可包含以下特徵之一或多者。該方法之該中介層係一第三晶粒。該方法之該中介層係包含一重佈結構之一塊狀基板，該第一晶粒及第二晶粒接合至該重佈結構。該方法之單粒化包含：用鋸切穿該中介層及該第一虛設晶粒以形成該封裝結構。該方法之該第一晶粒包含一或多個邏輯晶粒，且該第二晶粒包含一或多個記憶體晶粒。該方法進一步包含：使一底部填膠形成於該中介層與該第一晶粒及該第二晶粒之間且包圍該等第一電連接器及該等第二電連接器，該囊封劑經形成於該底部填膠上方。該方法進一步包含：形成延伸貫穿該中介層之貫穿通路，該第一晶粒及第二晶粒經電耦合至該等貫穿通路；使第三電連接器形成於該中介層之一第二側上，該第二側與該第一側對置，該等第三電連接器經電耦合至該等貫穿通路；使用該等第三電連接器將該封裝結構安裝至一基板；及將一表面安裝裝置(SMD)接合至該基板。該方法之該第一虛設晶粒係由矽所形成。該方法之將該第一虛設晶粒附著至該中介層之該第一側包含：使用一黏著層將該第一虛設晶粒黏著至該中介層之該第一側。該方法之將該第一虛設晶粒附著至該中介層之該第一側包含：使用第四電連接器將該第一虛設晶粒接合至該中介層之該第一側。 在一實施例中，一種方法包含：使貫穿通路形成於一基板中；使一第一重佈結構形成於該基板之一第一側上，該第一重佈結構經電耦合至該等貫穿通路；使用第一電連接器將一邏輯晶粒接合至該第一重佈結構，該等第一電連接器經電耦合至該第一重佈結構；使用第二電連接器將一記憶體晶粒堆疊接合至該第一重佈結構，該記憶體晶粒堆疊相鄰於該邏輯晶粒，該等第二電連接器經電耦合至該第一重佈結構；使一虛設晶粒相鄰於該記憶體晶粒堆疊附著於切割道區域中之該第一重佈結構上方；及單粒化該基板、該第一重佈結構及該虛設晶粒以形成一封裝結構。 實施例可包含以下特徵之一或多者。該方法之單粒化包含：用鋸切穿該基板、該第一重佈結構及該等切割道區域中之虛設晶粒以形成該封裝結構。該方法進一步包含：使一底部填膠形成於該第一重佈結構與該邏輯晶粒及該記憶體晶粒堆疊之間且包圍該等第一電連接器及該等第二電連接器；及使用一囊封劑囊封該邏輯晶粒、該記憶體晶粒堆疊及該虛設晶粒，該囊封劑鄰接該底部填膠之部分。該方法之該虛設晶粒係由矽製成。該方法之將該虛設晶粒附著於該第一重佈結構上方包含：使用一黏著層將該虛設晶粒黏著至該第一重佈結構。該方法之將該虛設晶粒附著於該第一重佈結構上方包含：使用第三電連接器將該虛設晶粒接合至該第一重佈結構。該方法進一步包含：使該基板之一第二側薄化以曝露該等貫穿通路之端，該第二側與該第一側對置；使一第二重佈結構形成於該基板之該第二側上，該第二重佈結構經電耦合至該等貫穿通路之該等曝露端；使第四電連接器形成於該第二重佈結構上且電耦合至該第二重佈結構；將該等第四電連接器接合至一第二基板；及使一表面安裝裝置(SMD)相鄰於該等第四電連接器之一者接合至該第二基板。 在一實施例中，一種結構包含：一中介層之一第一側，其經接合至一基板；一邏輯晶粒及一記憶體堆疊，其等經接合至該中介層之一第二側，該第二側與該第一側對置；一虛設晶粒，其經附著至該中介層之該第二側，該虛設晶粒相鄰於該邏輯晶粒或該記憶體堆疊；及一模製材料，其沿該邏輯晶粒、該記憶體堆疊及該虛設晶粒之側壁延伸，透過該模製材料曝露該邏輯晶粒及該虛設晶粒之頂面。 實施例可包含以下特徵之一或多者。該結構之該虛設晶粒具有與該中介層之側向範圍毗連的側壁表面。該結構之該虛設晶粒係由矽製成。 上文已概述若干實施例之特徵，使得熟習此項技術者可較佳理解本揭露之態樣。熟習此項技術者應瞭解，其可容易地將本揭露用作用於設計或修改其他程序及結構的一基礎以實施相同目的及/或達成本文中所引入之實施例之相同優點。熟習此項技術者亦應意識到，此等等效構造不應背離本揭露之精神及範疇，且其可在不背離本揭露之精神及範疇的情況下對本文作出各種改變、置換及變更。
60‧‧‧主體62‧‧‧主動表面64‧‧‧互連結構66‧‧‧晶粒連接器68‧‧‧晶粒70‧‧‧基板72‧‧‧第一表面74‧‧‧貫穿通路(TV)76‧‧‧重佈結構77‧‧‧金屬柱/電連接器/微凸塊78‧‧‧金屬帽層/電連接器/微凸塊79‧‧‧金屬柱/電連接器80‧‧‧主體84‧‧‧互連結構86‧‧‧晶粒連接器88‧‧‧晶粒90‧‧‧第一封裝區域91‧‧‧導電接頭92‧‧‧第二封裝區域94‧‧‧切割道區域96‧‧‧組件100‧‧‧底部填膠材料104‧‧‧附著結構/黏著劑/微凸塊106‧‧‧虛設晶粒106'‧‧‧虛設晶粒之部分112‧‧‧囊封劑116‧‧‧第二表面117‧‧‧介電層118‧‧‧金屬化圖案120‧‧‧電連接器140‧‧‧表面裝置200‧‧‧組件封裝300‧‧‧基板T1‧‧‧組合厚度T2‧‧‧厚度T3‧‧‧組合厚度
自結合附圖閱讀之以下詳細描述最佳理解本揭露之態樣。應注意，根據工業標準慣例，各種構件未按比例繪製。實際上，為使討論清楚，可任意增大或減小各種構件之尺寸。 圖1至圖14係根據一些實施例之形成一封裝結構之一實例性程序中之橫截面圖及平面圖。 圖15A至圖15F繪示根據一些實施例之一封裝結構之平面圖。 圖16A至圖16F繪示根據一些實施例之一封裝結構之平面圖。 圖17A至圖17D繪示根據一些實施例之一封裝結構之平面圖。
68‧‧‧晶粒
70‧‧‧基板
88‧‧‧晶粒
96‧‧‧組件
100‧‧‧底部填膠材料
104‧‧‧附著結構/黏著劑/微凸塊
106'‧‧‧虛設晶粒之部分
112‧‧‧囊封劑
117‧‧‧介電層
140‧‧‧表面裝置
200‧‧‧組件封裝
300‧‧‧基板

Claims (10)

  1. 一種封裝結構之形成方法，其包括：使用第一電連接器將一第一晶粒接合至一中介層之一第一側；使用第二電連接器將一第二晶粒接合至該中介層之該第一側，該第二晶粒相鄰該第一晶粒；使用第三電連接器將一第三晶粒接合至該中介層之該第一側，該第三晶粒相鄰該第一晶粒；使一底部填膠形成於該中介層與該第一晶粒和該第二晶粒之間，且圍繞該第一電連接器與該第二電連接器；在形成該底部填膠後設置一第一虛設晶粒，該第一虛設晶粒相鄰於該第一晶粒附著至該中介層之該第一側；在形成該底部填膠後設置一第二虛設晶粒，該第二虛設晶粒相鄰於該第三晶粒附著至該中介層之該第一側，其中該第一虛設晶粒與該第二虛設晶粒分離，且該第二虛設晶粒、該第二晶粒與該第三晶粒皆位於該第一虛設晶粒與該第一晶粒之間；使用一囊封劑囊封該第一晶粒、該第二晶粒、該第一虛設晶粒及該第二虛設晶粒；及單粒化該中介層、該第一虛設晶粒及該第二虛設晶粒以形成一封裝結構，該封裝結構包含該第一虛設晶粒的一部份以及完整之該第二虛設晶粒。
  2. 如請求項1之方法，其中該中介層係一第四晶粒。
  3. 如請求項1之方法，其中該中介層係包含一重佈結構之一塊狀基板，該第一晶粒及該第二晶粒經接合至該重佈結構。
  4. 如請求項1之方法，其中單粒化包括：用鋸切穿該中介層及該第一虛設晶粒以形成該封裝結構。
  5. 如請求項1之方法，其中該囊封劑形成於該底部填膠上方，且該囊封劑與該底部填膠之一側壁接觸。
  6. 如請求項1之方法，其進一步包括：形成延伸貫穿該中介層之貫穿通路，該第一晶粒及該第二晶粒經電耦合至該等貫穿通路；使第三電連接器形成於該中介層之一第二側上，該第二側與該第一側對置，該等第三電連接器經電耦合至該等貫穿通路；使用該等第三電連接器將該封裝結構安裝至一基板；及將一表面安裝裝置(SMD)接合至該基板。
  7. 如請求項1之方法，其中該第一虛設晶粒係由矽所形成。
  8. 如請求項1之方法，其中將該第一虛設晶粒附著至該中介層之該第一側包括：使用第四電連接器將該第一虛設晶粒接合至該中介層之該第一側。
  9. 一種封裝結構之形成方法，其包括： 使貫穿通路形成於一基板中；使一第一重佈結構形成於該基板之一第一側上，該第一重佈結構經電耦合至該等貫穿通路；使用第一電連接器將一邏輯晶粒接合至該第一重佈結構，該等第一電連接器經電耦合至該第一重佈結構；使用第二電連接器將一記憶體晶粒堆疊接合至該第一重佈結構，該記憶體晶粒堆疊相鄰於該邏輯晶粒，該等第二電連接器經電耦合至該第一重佈結構；使一底部填膠形成於該第一重佈結構與該邏輯晶粒和該記憶體晶粒堆疊之間，且圍繞該第一電連接器與該第二電連接器；在形成該底部填膠後設置一第一虛設晶粒，該第一虛設晶粒相鄰於該記憶體晶粒堆疊附著於切割道區域中之該第一重佈結構上方且相鄰於該記憶體晶粒堆疊；在形成該底部填膠後設置一第二虛設晶粒，該第二虛設晶粒相鄰於該記憶體晶粒堆疊附著於位於切割道區域之外之該第一重佈結構上方，該第二虛設晶粒與該記憶體晶粒堆疊位於該第一虛設晶粒與該邏輯晶粒之間；及單粒化該基板、該第一重佈結構及該第一虛設晶粒以形成一封裝結構。
  10. 如請求項9之方法，其進一步包括：於該底部填膠上方形成一囊封劑，其中該底部填膠沿該邏輯晶粒與該記憶體晶粒堆疊之側壁向上延伸，且該囊封劑與該底部填膠之一側壁接觸。
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