TWI717197B - 光阻材料及圖案形成方法 - Google Patents

光阻材料及圖案形成方法 Download PDF

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Publication number
TWI717197B
TWI717197B TW109102072A TW109102072A TWI717197B TW I717197 B TWI717197 B TW I717197B TW 109102072 A TW109102072 A TW 109102072A TW 109102072 A TW109102072 A TW 109102072A TW I717197 B TWI717197 B TW I717197B
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TW
Taiwan
Prior art keywords
group
carbons
atom
groups
photoresist material
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TW109102072A
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English (en)
Chinese (zh)
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TW202034078A (zh
Inventor
畠山潤
藤原敬之
大橋正樹
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日商信越化學工業股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/04Saturated compounds containing keto groups bound to acyclic carbon atoms
    • C07C49/175Saturated compounds containing keto groups bound to acyclic carbon atoms containing ether groups, groups, groups, or groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Pyrrole Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Nitrogen- Or Sulfur-Containing Heterocyclic Ring Compounds With Rings Of Six Or More Members (AREA)
  • Hydrogenated Pyridines (AREA)
  • Steroid Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW109102072A 2019-01-29 2020-01-21 光阻材料及圖案形成方法 TWI717197B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019012754 2019-01-29
JP2019-012754 2019-01-29

Publications (2)

Publication Number Publication Date
TW202034078A TW202034078A (zh) 2020-09-16
TWI717197B true TWI717197B (zh) 2021-01-21

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TW109102072A TWI717197B (zh) 2019-01-29 2020-01-21 光阻材料及圖案形成方法

Country Status (4)

Country Link
US (1) US11281101B2 (https=)
JP (1) JP7283374B2 (https=)
KR (1) KR102382933B1 (https=)
TW (1) TWI717197B (https=)

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JP7283372B2 (ja) * 2019-01-25 2023-05-30 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP7268615B2 (ja) * 2019-02-27 2023-05-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7334683B2 (ja) 2019-08-02 2023-08-29 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7334684B2 (ja) 2019-08-02 2023-08-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7351257B2 (ja) * 2019-08-14 2023-09-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7354954B2 (ja) 2019-09-04 2023-10-03 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7588465B2 (ja) * 2019-12-25 2024-11-22 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US11740555B2 (en) * 2020-03-05 2023-08-29 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
JP7622544B2 (ja) 2020-05-18 2025-01-28 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP7537369B2 (ja) * 2020-06-18 2024-08-21 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7537368B2 (ja) 2020-06-18 2024-08-21 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7414032B2 (ja) * 2020-06-25 2024-01-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
US12001139B2 (en) * 2020-08-04 2024-06-04 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP7484846B2 (ja) 2020-09-28 2024-05-16 信越化学工業株式会社 分子レジスト組成物及びパターン形成方法
JP7757911B2 (ja) * 2021-10-07 2025-10-22 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7757914B2 (ja) * 2021-10-20 2025-10-22 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7838440B2 (ja) * 2021-10-21 2026-04-01 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7823536B2 (ja) 2021-11-02 2026-03-04 信越化学工業株式会社 分子レジスト組成物及びパターン形成方法
JP7666365B2 (ja) * 2022-03-11 2025-04-22 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7848700B2 (ja) * 2022-06-27 2026-04-21 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP7651052B1 (ja) * 2024-03-11 2025-03-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、及び光酸発生剤

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WO2011034212A1 (en) * 2009-09-16 2011-03-24 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same
WO2016076205A1 (ja) * 2014-11-14 2016-05-19 Jsr株式会社 感放射線性樹脂組成物、表示素子用硬化膜、表示素子用硬化膜の形成方法及び表示素子
TW201831539A (zh) * 2016-08-30 2018-09-01 富士軟片股份有限公司 圖案形成方法、感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜及電子元件的製造方法

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TW201042375A (en) * 2009-03-26 2010-12-01 Fujifilm Corp Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method
WO2011034212A1 (en) * 2009-09-16 2011-03-24 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same
WO2016076205A1 (ja) * 2014-11-14 2016-05-19 Jsr株式会社 感放射線性樹脂組成物、表示素子用硬化膜、表示素子用硬化膜の形成方法及び表示素子
TW201831539A (zh) * 2016-08-30 2018-09-01 富士軟片股份有限公司 圖案形成方法、感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜及電子元件的製造方法

Also Published As

Publication number Publication date
KR20200094114A (ko) 2020-08-06
TW202034078A (zh) 2020-09-16
JP7283374B2 (ja) 2023-05-30
KR102382933B1 (ko) 2022-04-04
JP2020122957A (ja) 2020-08-13
US11281101B2 (en) 2022-03-22
US20200241414A1 (en) 2020-07-30

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