TWI716980B - 使用具回授之主動前置驅動器的GaN驅動器 - Google Patents
使用具回授之主動前置驅動器的GaN驅動器 Download PDFInfo
- Publication number
- TWI716980B TWI716980B TW108130673A TW108130673A TWI716980B TW I716980 B TWI716980 B TW I716980B TW 108130673 A TW108130673 A TW 108130673A TW 108130673 A TW108130673 A TW 108130673A TW I716980 B TWI716980 B TW I716980B
- Authority
- TW
- Taiwan
- Prior art keywords
- driver
- transistor
- gate
- output stage
- gate driver
- Prior art date
Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 11
- 229910002601 GaN Inorganic materials 0.000 claims 9
- 238000006243 chemical reaction Methods 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 230000003068 static effect Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
Landscapes
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862723801P | 2018-08-28 | 2018-08-28 | |
| US62/723,801 | 2018-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202023195A TW202023195A (zh) | 2020-06-16 |
| TWI716980B true TWI716980B (zh) | 2021-01-21 |
Family
ID=69640268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108130673A TWI716980B (zh) | 2018-08-28 | 2019-08-27 | 使用具回授之主動前置驅動器的GaN驅動器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11038503B2 (https=) |
| EP (1) | EP3844874A4 (https=) |
| JP (1) | JP7499255B2 (https=) |
| KR (1) | KR102508184B1 (https=) |
| CN (1) | CN112889220B (https=) |
| TW (1) | TWI716980B (https=) |
| WO (1) | WO2020047119A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7275984B2 (ja) * | 2019-08-09 | 2023-05-18 | オムロン株式会社 | 駆動回路 |
| WO2023107917A1 (en) | 2021-12-10 | 2023-06-15 | Efficient Power Conversion Corporation | Pre-driven bootstrapping drivers |
| JP7668252B2 (ja) * | 2022-09-08 | 2025-04-24 | 株式会社京三製作所 | 高周波電源装置 |
| TWI876726B (zh) * | 2023-12-01 | 2025-03-11 | 立積電子股份有限公司 | 邏輯電路和包含邏輯電路的前端模組 |
| WO2025245784A1 (en) * | 2024-05-30 | 2025-12-04 | Yangtze Memory Technologies Co., Ltd. | Driving circuit, memory device using driving circuit, and memory system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5796276A (en) * | 1994-12-30 | 1998-08-18 | Sgs-Thomson Microelectronics, Inc. | High-side-driver gate drive circuit |
| US7639081B2 (en) * | 2007-02-06 | 2009-12-29 | Texas Instuments Incorporated | Biasing scheme for low-voltage MOS cascode current mirrors |
| US8253479B2 (en) * | 2009-11-19 | 2012-08-28 | Freescale Semiconductor, Inc. | Output driver circuits for voltage regulators |
| US20140084962A1 (en) * | 2012-09-26 | 2014-03-27 | Broadcom Corporation | Output driver using low voltage transistors |
| US9722599B1 (en) * | 2016-01-28 | 2017-08-01 | Infineon Technologies Austria Ag | Driver for the high side switch of the cascode switch |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4414502A (en) * | 1981-07-20 | 1983-11-08 | Advanced Micro Devices, Inc. | Current source circuit |
| DE3835119A1 (de) * | 1988-10-14 | 1990-04-19 | Siemens Ag | Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen |
| US5272432A (en) * | 1991-05-01 | 1993-12-21 | Winbond Electronics N.A. Corporation | DAC current source with stabilizing bias |
| KR100205233B1 (ko) | 1996-06-14 | 1999-07-01 | 김탁중 | 게이트 구동회로 |
| JP4935294B2 (ja) | 2006-10-18 | 2012-05-23 | 富士電機株式会社 | 絶縁ゲート型デバイスの駆動回路 |
| EP2207257B1 (en) | 2007-10-02 | 2016-11-16 | Mitsubishi Electric Corporation | Gate driving circuit |
| JP5146460B2 (ja) * | 2007-11-16 | 2013-02-20 | 富士通株式会社 | バイアス回路、及びバイアス回路に対する制御方法 |
| US7969226B2 (en) | 2009-05-07 | 2011-06-28 | Semisouth Laboratories, Inc. | High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same |
| EP2426820B1 (en) * | 2010-09-07 | 2013-09-04 | Dialog Semiconductor GmbH | Circuit controlling HS-NMOS power switches with slew-rate limitation |
| JP6286899B2 (ja) | 2013-07-03 | 2018-03-07 | 富士電機株式会社 | 絶縁ゲート型半導体素子の駆動装置および電力変換装置 |
| US9960620B2 (en) * | 2014-09-16 | 2018-05-01 | Navitas Semiconductor, Inc. | Bootstrap capacitor charging circuit for GaN devices |
| US9874893B2 (en) * | 2015-05-27 | 2018-01-23 | Analog Devices, Inc. | Self-biased multiple cascode current mirror circuit |
| JP7080185B2 (ja) * | 2016-05-25 | 2022-06-03 | エフィシエント パワー コンヴァーション コーポレーション | エンハンスメントモードfetドライバic |
-
2019
- 2019-08-27 TW TW108130673A patent/TWI716980B/zh active
- 2019-08-28 JP JP2021535482A patent/JP7499255B2/ja active Active
- 2019-08-28 WO PCT/US2019/048600 patent/WO2020047119A1/en not_active Ceased
- 2019-08-28 CN CN201980068471.7A patent/CN112889220B/zh active Active
- 2019-08-28 US US16/553,650 patent/US11038503B2/en active Active
- 2019-08-28 EP EP19855471.9A patent/EP3844874A4/en active Pending
- 2019-08-28 KR KR1020217008958A patent/KR102508184B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5796276A (en) * | 1994-12-30 | 1998-08-18 | Sgs-Thomson Microelectronics, Inc. | High-side-driver gate drive circuit |
| US7639081B2 (en) * | 2007-02-06 | 2009-12-29 | Texas Instuments Incorporated | Biasing scheme for low-voltage MOS cascode current mirrors |
| US8253479B2 (en) * | 2009-11-19 | 2012-08-28 | Freescale Semiconductor, Inc. | Output driver circuits for voltage regulators |
| US20140084962A1 (en) * | 2012-09-26 | 2014-03-27 | Broadcom Corporation | Output driver using low voltage transistors |
| US9722599B1 (en) * | 2016-01-28 | 2017-08-01 | Infineon Technologies Austria Ag | Driver for the high side switch of the cascode switch |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102508184B1 (ko) | 2023-03-09 |
| JP7499255B2 (ja) | 2024-06-13 |
| WO2020047119A1 (en) | 2020-03-05 |
| US20200076426A1 (en) | 2020-03-05 |
| CN112889220A (zh) | 2021-06-01 |
| CN112889220B (zh) | 2024-08-23 |
| TW202023195A (zh) | 2020-06-16 |
| US11038503B2 (en) | 2021-06-15 |
| KR20210072762A (ko) | 2021-06-17 |
| EP3844874A4 (en) | 2022-05-25 |
| EP3844874A1 (en) | 2021-07-07 |
| JP2021535702A (ja) | 2021-12-16 |
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