TWI716980B - 使用具回授之主動前置驅動器的GaN驅動器 - Google Patents

使用具回授之主動前置驅動器的GaN驅動器 Download PDF

Info

Publication number
TWI716980B
TWI716980B TW108130673A TW108130673A TWI716980B TW I716980 B TWI716980 B TW I716980B TW 108130673 A TW108130673 A TW 108130673A TW 108130673 A TW108130673 A TW 108130673A TW I716980 B TWI716980 B TW I716980B
Authority
TW
Taiwan
Prior art keywords
driver
transistor
gate
output stage
gate driver
Prior art date
Application number
TW108130673A
Other languages
English (en)
Chinese (zh)
Other versions
TW202023195A (zh
Inventor
愛德華 李
拉維 阿南斯
麥可 強普曼
Original Assignee
美商高效電源轉換公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商高效電源轉換公司 filed Critical 美商高效電源轉換公司
Publication of TW202023195A publication Critical patent/TW202023195A/zh
Application granted granted Critical
Publication of TWI716980B publication Critical patent/TWI716980B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
TW108130673A 2018-08-28 2019-08-27 使用具回授之主動前置驅動器的GaN驅動器 TWI716980B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862723801P 2018-08-28 2018-08-28
US62/723,801 2018-08-28

Publications (2)

Publication Number Publication Date
TW202023195A TW202023195A (zh) 2020-06-16
TWI716980B true TWI716980B (zh) 2021-01-21

Family

ID=69640268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108130673A TWI716980B (zh) 2018-08-28 2019-08-27 使用具回授之主動前置驅動器的GaN驅動器

Country Status (7)

Country Link
US (1) US11038503B2 (https=)
EP (1) EP3844874A4 (https=)
JP (1) JP7499255B2 (https=)
KR (1) KR102508184B1 (https=)
CN (1) CN112889220B (https=)
TW (1) TWI716980B (https=)
WO (1) WO2020047119A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7275984B2 (ja) * 2019-08-09 2023-05-18 オムロン株式会社 駆動回路
WO2023107917A1 (en) 2021-12-10 2023-06-15 Efficient Power Conversion Corporation Pre-driven bootstrapping drivers
JP7668252B2 (ja) * 2022-09-08 2025-04-24 株式会社京三製作所 高周波電源装置
TWI876726B (zh) * 2023-12-01 2025-03-11 立積電子股份有限公司 邏輯電路和包含邏輯電路的前端模組
WO2025245784A1 (en) * 2024-05-30 2025-12-04 Yangtze Memory Technologies Co., Ltd. Driving circuit, memory device using driving circuit, and memory system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US7639081B2 (en) * 2007-02-06 2009-12-29 Texas Instuments Incorporated Biasing scheme for low-voltage MOS cascode current mirrors
US8253479B2 (en) * 2009-11-19 2012-08-28 Freescale Semiconductor, Inc. Output driver circuits for voltage regulators
US20140084962A1 (en) * 2012-09-26 2014-03-27 Broadcom Corporation Output driver using low voltage transistors
US9722599B1 (en) * 2016-01-28 2017-08-01 Infineon Technologies Austria Ag Driver for the high side switch of the cascode switch

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414502A (en) * 1981-07-20 1983-11-08 Advanced Micro Devices, Inc. Current source circuit
DE3835119A1 (de) * 1988-10-14 1990-04-19 Siemens Ag Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen
US5272432A (en) * 1991-05-01 1993-12-21 Winbond Electronics N.A. Corporation DAC current source with stabilizing bias
KR100205233B1 (ko) 1996-06-14 1999-07-01 김탁중 게이트 구동회로
JP4935294B2 (ja) 2006-10-18 2012-05-23 富士電機株式会社 絶縁ゲート型デバイスの駆動回路
EP2207257B1 (en) 2007-10-02 2016-11-16 Mitsubishi Electric Corporation Gate driving circuit
JP5146460B2 (ja) * 2007-11-16 2013-02-20 富士通株式会社 バイアス回路、及びバイアス回路に対する制御方法
US7969226B2 (en) 2009-05-07 2011-06-28 Semisouth Laboratories, Inc. High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same
EP2426820B1 (en) * 2010-09-07 2013-09-04 Dialog Semiconductor GmbH Circuit controlling HS-NMOS power switches with slew-rate limitation
JP6286899B2 (ja) 2013-07-03 2018-03-07 富士電機株式会社 絶縁ゲート型半導体素子の駆動装置および電力変換装置
US9960620B2 (en) * 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9874893B2 (en) * 2015-05-27 2018-01-23 Analog Devices, Inc. Self-biased multiple cascode current mirror circuit
JP7080185B2 (ja) * 2016-05-25 2022-06-03 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードfetドライバic

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US7639081B2 (en) * 2007-02-06 2009-12-29 Texas Instuments Incorporated Biasing scheme for low-voltage MOS cascode current mirrors
US8253479B2 (en) * 2009-11-19 2012-08-28 Freescale Semiconductor, Inc. Output driver circuits for voltage regulators
US20140084962A1 (en) * 2012-09-26 2014-03-27 Broadcom Corporation Output driver using low voltage transistors
US9722599B1 (en) * 2016-01-28 2017-08-01 Infineon Technologies Austria Ag Driver for the high side switch of the cascode switch

Also Published As

Publication number Publication date
KR102508184B1 (ko) 2023-03-09
JP7499255B2 (ja) 2024-06-13
WO2020047119A1 (en) 2020-03-05
US20200076426A1 (en) 2020-03-05
CN112889220A (zh) 2021-06-01
CN112889220B (zh) 2024-08-23
TW202023195A (zh) 2020-06-16
US11038503B2 (en) 2021-06-15
KR20210072762A (ko) 2021-06-17
EP3844874A4 (en) 2022-05-25
EP3844874A1 (en) 2021-07-07
JP2021535702A (ja) 2021-12-16

Similar Documents

Publication Publication Date Title
TWI716980B (zh) 使用具回授之主動前置驅動器的GaN驅動器
US10790811B2 (en) Cascaded bootstrapping GaN power switch and driver
US7457092B2 (en) Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
US8860472B2 (en) Power switch driving circuits and switching mode power supply circuits thereof
US20150171861A1 (en) Analog switches and methods for controlling analog switches
KR20010049227A (ko) 레벨조정회로 및 이를 포함하는 데이터 출력회로
CN114204926B (zh) 半导体装置
US8593204B2 (en) Amplitude conversion circuit
US10296034B2 (en) Negative power supply control circuit and power supply device
US11641198B1 (en) Wide voltage gate driver using low gate oxide transistors
US6081132A (en) High voltage drive output buffer for low Voltage integrated circuits
JP2023063081A (ja) スイッチング回路、dc/dcコンバータおよびその制御回路
KR100205506B1 (ko) 스위치가능한 전류-기준전압 발생기
CN111034048B (zh) 具有反向电流阻挡的传感器设备的高压输出驱动器
US6236195B1 (en) Voltage variation correction circuit
US6225838B1 (en) Integrated circuit buffers having reduced power consumption requirements
US7075335B2 (en) Level shifter
KR100302610B1 (ko) 고전압 구동 회로
CN113078888A (zh) 栅极驱动设备和控制方法
JP4371645B2 (ja) 半導体装置
US7808275B1 (en) Input buffer with adaptive trip point
US20220158630A1 (en) Delay circuit
JP2006025085A (ja) Cmos駆動回路
KR102112794B1 (ko) 스위칭 회로
US20250105844A1 (en) Semiconductor device