KR102508184B1 - 피드백이 있는 액티브 프리 드라이버를 사용하는 GaN 드라이버 - Google Patents

피드백이 있는 액티브 프리 드라이버를 사용하는 GaN 드라이버 Download PDF

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KR102508184B1
KR102508184B1 KR1020217008958A KR20217008958A KR102508184B1 KR 102508184 B1 KR102508184 B1 KR 102508184B1 KR 1020217008958 A KR1020217008958 A KR 1020217008958A KR 20217008958 A KR20217008958 A KR 20217008958A KR 102508184 B1 KR102508184 B1 KR 102508184B1
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driver
transistor
voltage
gate
output
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Korean (ko)
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KR20210072762A (ko
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에드워드 리
라비 아난쓰
마이클 채프만
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이피션트 파워 컨버젼 코퍼레이션
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

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  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
KR1020217008958A 2018-08-28 2019-08-28 피드백이 있는 액티브 프리 드라이버를 사용하는 GaN 드라이버 Active KR102508184B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862723801P 2018-08-28 2018-08-28
US62/723,801 2018-08-28
PCT/US2019/048600 WO2020047119A1 (en) 2018-08-28 2019-08-28 Gan driver using active pre-driver with feedback

Publications (2)

Publication Number Publication Date
KR20210072762A KR20210072762A (ko) 2021-06-17
KR102508184B1 true KR102508184B1 (ko) 2023-03-09

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KR1020217008958A Active KR102508184B1 (ko) 2018-08-28 2019-08-28 피드백이 있는 액티브 프리 드라이버를 사용하는 GaN 드라이버

Country Status (7)

Country Link
US (1) US11038503B2 (https=)
EP (1) EP3844874A4 (https=)
JP (1) JP7499255B2 (https=)
KR (1) KR102508184B1 (https=)
CN (1) CN112889220B (https=)
TW (1) TWI716980B (https=)
WO (1) WO2020047119A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7275984B2 (ja) * 2019-08-09 2023-05-18 オムロン株式会社 駆動回路
WO2023107917A1 (en) 2021-12-10 2023-06-15 Efficient Power Conversion Corporation Pre-driven bootstrapping drivers
JP7668252B2 (ja) * 2022-09-08 2025-04-24 株式会社京三製作所 高周波電源装置
TWI876726B (zh) * 2023-12-01 2025-03-11 立積電子股份有限公司 邏輯電路和包含邏輯電路的前端模組
WO2025245784A1 (en) * 2024-05-30 2025-12-04 Yangtze Memory Technologies Co., Ltd. Driving circuit, memory device using driving circuit, and memory system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100205233B1 (ko) 1996-06-14 1999-07-01 김탁중 게이트 구동회로
JP2008103895A (ja) 2006-10-18 2008-05-01 Fuji Electric Device Technology Co Ltd 絶縁ゲート型デバイスの駆動回路
JP4954290B2 (ja) 2007-10-02 2012-06-13 三菱電機株式会社 ゲート駆動回路
US20140084962A1 (en) 2012-09-26 2014-03-27 Broadcom Corporation Output driver using low voltage transistors
JP2015015794A (ja) 2013-07-03 2015-01-22 富士電機株式会社 絶縁ゲート型半導体素子の駆動装置および電力変換装置

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Publication number Priority date Publication date Assignee Title
US4414502A (en) * 1981-07-20 1983-11-08 Advanced Micro Devices, Inc. Current source circuit
DE3835119A1 (de) * 1988-10-14 1990-04-19 Siemens Ag Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen
US5272432A (en) * 1991-05-01 1993-12-21 Winbond Electronics N.A. Corporation DAC current source with stabilizing bias
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US7639081B2 (en) * 2007-02-06 2009-12-29 Texas Instuments Incorporated Biasing scheme for low-voltage MOS cascode current mirrors
JP5146460B2 (ja) * 2007-11-16 2013-02-20 富士通株式会社 バイアス回路、及びバイアス回路に対する制御方法
US7969226B2 (en) 2009-05-07 2011-06-28 Semisouth Laboratories, Inc. High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same
US8253479B2 (en) * 2009-11-19 2012-08-28 Freescale Semiconductor, Inc. Output driver circuits for voltage regulators
EP2426820B1 (en) * 2010-09-07 2013-09-04 Dialog Semiconductor GmbH Circuit controlling HS-NMOS power switches with slew-rate limitation
US9960620B2 (en) * 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9874893B2 (en) * 2015-05-27 2018-01-23 Analog Devices, Inc. Self-biased multiple cascode current mirror circuit
US9722599B1 (en) * 2016-01-28 2017-08-01 Infineon Technologies Austria Ag Driver for the high side switch of the cascode switch
JP7080185B2 (ja) * 2016-05-25 2022-06-03 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードｆｅｔドライバｉｃ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100205233B1 (ko) 1996-06-14 1999-07-01 김탁중 게이트 구동회로
JP2008103895A (ja) 2006-10-18 2008-05-01 Fuji Electric Device Technology Co Ltd 絶縁ゲート型デバイスの駆動回路
JP4954290B2 (ja) 2007-10-02 2012-06-13 三菱電機株式会社 ゲート駆動回路
US20140084962A1 (en) 2012-09-26 2014-03-27 Broadcom Corporation Output driver using low voltage transistors
JP2015015794A (ja) 2013-07-03 2015-01-22 富士電機株式会社 絶縁ゲート型半導体素子の駆動装置および電力変換装置

Also Published As

Publication number Publication date
JP7499255B2 (ja) 2024-06-13
WO2020047119A1 (en) 2020-03-05
US20200076426A1 (en) 2020-03-05
TWI716980B (zh) 2021-01-21
CN112889220A (zh) 2021-06-01
CN112889220B (zh) 2024-08-23
TW202023195A (zh) 2020-06-16
US11038503B2 (en) 2021-06-15
KR20210072762A (ko) 2021-06-17
EP3844874A4 (en) 2022-05-25
EP3844874A1 (en) 2021-07-07
JP2021535702A (ja) 2021-12-16

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