TWI715727B - Disposal method of package substrate - Google Patents

Disposal method of package substrate Download PDF

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Publication number
TWI715727B
TWI715727B TW106105323A TW106105323A TWI715727B TW I715727 B TWI715727 B TW I715727B TW 106105323 A TW106105323 A TW 106105323A TW 106105323 A TW106105323 A TW 106105323A TW I715727 B TWI715727 B TW I715727B
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package substrate
wafer
wafers
tray
storage
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TW106105323A
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Chinese (zh)
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TW201801159A (en
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石井茂
馬橋𨺓之
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

本發明之課題為，將個片化後之晶片的對於收容托盤之收容時間縮短，並且對實施後續處理之處理裝置的大型化作抑制。 The subject of the present invention is to shorten the storage time of the individual wafers for the storage tray, and to suppress the enlargement of the processing device for performing subsequent processing.

本發明之解決手段，係為將為可收容於收容托盤(50)中的規格尺寸之數倍之封裝基板(W)分割成各個晶片(C)並分成複數個收容托盤來進行收容的封裝基板之處置方法，並構成為：具有將封裝基板沿著分割預定線來分割而分割成複數個晶片的步驟、和將封裝基板之分割後的全部晶片中之可收容於收容托盤中的個數之晶片整批吸引保持在晶片移送墊(45)並收容於收容托盤的步驟、以及將收容有複數個晶片的收容托盤進行搬送的步驟。 The solution of the present invention is to divide the package substrate (W) that can be accommodated in the storage tray (50) into multiple chips (C) and divide the package substrate (W) into a plurality of storage trays for storage. The processing method is composed of a step of dividing the package substrate along a predetermined dividing line and dividing it into a plurality of chips, and dividing the package substrate into all the chips that can be accommodated in the receiving tray A step of sucking and holding the wafers in a batch on a wafer transfer pad (45) and storing them in a storage tray, and a step of transporting a storage tray containing a plurality of wafers.

Description

封裝基板之處置方法 Disposal method of package substrate

本發明係關於被分割成各個晶片的封裝基板之處置方法。 The present invention relates to a processing method of a package substrate divided into individual chips.

行動電話或個人電腦等之電子機器係被要求輕量化、小型化，針對半導體元件之封裝，亦開發有被稱為CSP(Chip Size Package)之可小型化的封裝技術。以往，作為CSP基板等之封裝基板的分割後之處置方法，已知有將分割後的晶片個別地處置的方法(例如，參照專利文獻1)。於專利文獻1所記載之處置方法中，係在以切削刃將封裝基板分割成各個晶片(顆粒)之後，使晶片1個個地被拾取而從保持台被收容於搬送托盤。 Electronic devices such as mobile phones or personal computers are required to be lighter and smaller. For the packaging of semiconductor components, a miniaturized packaging technology called CSP (Chip Size Package) has also been developed. Conventionally, as a method of treating a package substrate such as a CSP substrate after division, a method of individually disposing of the divided wafers is known (for example, refer to Patent Document 1). In the processing method described in Patent Document 1, after the package substrate is divided into individual wafers (pellets) with a cutting edge, the wafers are picked up one by one and stored in a transfer tray from a holding table.

[先前技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2000-150427號公報 [Patent Document 1] JP 2000-150427 A

然而，於專利文獻1所記載之處置方法中，由於是個別地拾取晶片，因此直到將全部的晶片收容於收容托盤結束為止需要相當的時間。今後，若伴隨著封裝基板的大型化而晶片的拾取數目增加，則可想定對於收容托盤之晶片的收容所需要的時間會進一步增長。再者，在如同封裝基板之尺寸對角線超過450mm、600mm一般之大片基板的情況時，係存在有關於對分割後之封裝基板實施後續的處理之各處理裝置亦不得不大型化的問題。 However, in the disposal method described in Patent Document 1, since the wafers are picked up individually, it takes a considerable time until all the wafers are stored in the storage tray. In the future, if the number of pick-ups of wafers increases with the increase in the size of the package substrate, it is conceivable that the time required for the storage of the wafers in the storage tray will further increase. Furthermore, in the case of a large-scale substrate such as the size of the package substrate exceeding 450 mm or 600 mm in diagonal, there is a problem that the processing devices for performing subsequent processing on the divided package substrate have to be enlarged.

本發明係鑑於該點而完成者，其目的為，提供可將個片化後之晶片的對於收容托盤之收容時間縮短，並且對實施後續處理之處理裝置的大型化作抑制的封裝基板之處置方法。 The present invention was completed in view of this point, and its purpose is to provide a package substrate treatment that can shorten the storage time of the individual wafers for the storage tray and suppress the enlargement of the processing device for subsequent processing method.

本發明之封裝基板之處置方法，係將形成有複數之分割預定線之封裝基板分割成複數個晶片，並收容於具備有具有規定外形的晶片收容部及被配設於該晶片收容部的黏著材之收容托盤中，其特徵為，具備有：分割步驟，係沿著分割預定線來將比該收容托盤之該規定外形更大形尺寸的該封裝基板分割成複數個晶片；和整批接著步驟，係在實施該分割步驟之後，將該封裝基板之全部晶片中之可收容於該晶片收容部的個數之晶片吸引保持於與該 晶片收容部相對應之尺寸的晶片移送墊，並朝該晶片收容部之該黏著材的黏著面按壓，使一部分的複數晶片整批接著於該黏著面；以及搬送步驟，係在實施該整批接著步驟之後，將於該晶片收容部內接著有該一部分的複數晶片的該收容托盤進行搬送。 The processing method of the package substrate of the present invention is to divide the package substrate formed with a plurality of predetermined dividing lines into a plurality of chips, and house them in a chip housing portion provided with a predetermined shape and an adhesive disposed on the chip housing portion The material storage tray is characterized in that it includes: a dividing step of dividing the package substrate with a larger size than the prescribed outer shape of the storage tray into a plurality of chips along a predetermined dividing line; The step is to attract and hold the number of chips that can be accommodated in the chip accommodating portion among all chips of the package substrate after the dividing step is performed. The wafer transfer pad of the size corresponding to the wafer receiving portion is pressed against the adhesive surface of the adhesive material of the wafer receiving portion, so that a part of the plurality of wafers are adhered to the adhesive surface in a whole batch; and the transfer step is performed during the entire batch After the subsequent steps, the receiving tray on which the part of the plurality of wafers is connected in the wafer receiving portion is transported.

若依據此構成，則藉由晶片移送墊，封裝基板之全部晶片中可收容於晶片收容部的個數之晶片被吸引保持，而複數個晶片整批被接著於晶片收容部的黏著面。由於是將封裝基板之全部晶片分成複數次來整批收容於收容托盤中，因此相較於晶片1個個地收容於收容托盤的構成，可大幅地縮短收容時間。又，即使在封裝基板為大片基板的情況，由於封裝基板之全部晶片被分在複數個收容托盤中來被搬送至後續的處理裝置，因此沒有必要使後續的處理裝置配合封裝基板的尺寸而大型化。如此般，封裝基板之分割前，係可藉由將基板尺寸加大而增加晶片的拾取數目，封裝基板之分割後，係可藉由分在規定外形之搬送托盤中來進行搬送而抑制對既有的生產線之影響。 According to this structure, by the chip transfer pad, the number of chips that can be accommodated in the chip accommodating part of all the chips of the package substrate are attracted and held, and a plurality of chips are adhered to the adhesive surface of the chip accommodating part in a batch. Since all the wafers of the package substrate are divided into a plurality of times to be stored in a batch in the receiving tray, the storage time can be greatly shortened compared with the structure where the wafers are stored in the receiving tray one by one. In addition, even when the package substrate is a large-sized substrate, since all the wafers of the package substrate are divided into a plurality of storage trays to be transported to the subsequent processing device, there is no need to make the subsequent processing device large in size to match the size of the package substrate化. In this way, the size of the substrate can be increased to increase the number of chips picked up before the division of the package substrate. After the division of the package substrate, it can be transported by dividing it in a transport tray with a predetermined shape to prevent the damage The impact of some production lines.

若依據本發明，則藉由將封裝基板之全部晶片分成複數次來整批收容於收容托盤中，而可將個片化後之晶片的對於收容托盤之收容時間縮短，並且對實施後續處理之處理裝置的大型化作抑制。 According to the present invention, by dividing all the chips of the package substrate into a plurality of times and storing them in a batch in the receiving tray, the storage time of the individual chips on the receiving tray can be shortened, and the subsequent processing of The enlargement of the processing device is suppressed.

1‧‧‧切削裝置 1‧‧‧Cutting device

40‧‧‧切削手段 40‧‧‧Cutting means

45‧‧‧晶片移送墊 45‧‧‧Chip transfer pad

50‧‧‧收容托盤 50‧‧‧Containing tray

51‧‧‧晶片收容部 51‧‧‧Chip Storage

52‧‧‧黏著材 52‧‧‧Adhesive material

53‧‧‧黏著面 53‧‧‧Adhesive surface

60‧‧‧搬送機構 60‧‧‧Transportation mechanism

65‧‧‧處理裝置 65‧‧‧Processing device

C‧‧‧晶片 C‧‧‧chip

W‧‧‧封裝基板 W‧‧‧Packaging substrate

[第1圖]係本實施形態之切削裝置的立體圖。 [Figure 1] is a perspective view of the cutting device of this embodiment.

[第2圖]係將比較例之封裝基板之處置方法作展示的圖。 [Figure 2] is a diagram showing the processing method of the package substrate of the comparative example.

[第3圖]係將本實施形態之分割步驟之一例作展示的圖。 [Figure 3] is a diagram showing an example of the division step of this embodiment.

[第4圖]係將本實施形態之整批接著步驟之一例作展示的圖。 [Figure 4] is a diagram showing an example of the entire batch of subsequent steps in this embodiment.

[第5圖]係將本實施形態之搬送步驟之一例作展示的圖。 [Figure 5] is a diagram showing an example of the conveying procedure of this embodiment.

以下，參照所添附圖式，針對本實施形態之切削裝置進行說明。第1圖係本實施形態之切削裝置的立體圖。第2圖係將比較例之封裝基板之處置方法作展示的圖。另外，以下所示之切削裝置係為展示一例者，並不限定於此構造。切削裝置，係只要可適用本實施形態之封裝基板之處置方法，則亦可適當變更。又，封裝基板，並不限於CSP基板或晶圓級CSP基板等之小型的封裝基板，亦可為相較於CSP基板等而尺寸更大的封裝基板。 Hereinafter, the cutting device of this embodiment will be described with reference to the attached drawings. Figure 1 is a perspective view of the cutting device of this embodiment. Figure 2 is a diagram showing the processing method of the package substrate of the comparative example. In addition, the cutting device shown below is an example and is not limited to this structure. The cutting device can be appropriately changed as long as the method of processing the package substrate of this embodiment can be applied. In addition, the package substrate is not limited to a small package substrate such as a CSP substrate or a wafer-level CSP substrate, and may be a package substrate with a larger size than the CSP substrate or the like.

如第1圖所示般，切削裝置1係構成為：藉由將被保持在吸盤台25的矩形板狀之封裝基板W以一對的切削手段40進行切削，而將封裝基板W分割成各個晶 片C(參照第3圖)。封裝基板W的表面，係藉由複數條分割預定線L而被區劃成格子狀，在此等以分割預定線所區劃的各區域係形成有複數個元件D。另外，作為封裝基板W之元件D，係可配設有半導體元件，亦可配設有LED(Light Emitting Diode)元件。 As shown in Fig. 1, the cutting device 1 is configured to cut the rectangular plate-shaped package substrate W held on the suction table 25 by a pair of cutting means 40 to divide the package substrate W into individual parts. crystal Piece C (refer to Figure 3). The surface of the package substrate W is divided into a grid by a plurality of planned dividing lines L, and a plurality of elements D are formed in each area divided by the planned dividing lines. In addition, as the device D of the package substrate W, a semiconductor device or an LED (Light Emitting Diode) device may be provided.

於切削裝置1之基座10上，係設置有將吸盤台25在X軸方向上進行移動之切削進送手段20。切削進送手段20，係具有：被配置於基座10上之與X軸方向平行的一對的導軌21、和可滑動地設置在一對的導軌21之馬達驅動的X軸台22。於X軸台22的背面側，係形成有未圖示的螺帽部，於此螺帽部係螺合有滾珠螺桿23。並且，藉由使被連結於滾珠螺桿23之一端部處的驅動馬達24被旋轉驅動，吸盤台25會沿著一對的導軌21在X軸方向上進行切削進送。 The base 10 of the cutting device 1 is provided with a cutting and feeding means 20 that moves the suction table 25 in the X-axis direction. The cutting and feeding means 20 includes a pair of guide rails 21 parallel to the X-axis direction arranged on the base 10, and a motor-driven X-axis table 22 slidably provided on the pair of guide rails 21. On the back side of the X-axis base 22, a nut portion (not shown) is formed, and a ball screw 23 is screwed to the nut portion. In addition, by rotating the drive motor 24 connected to one end of the ball screw 23, the chuck table 25 performs cutting and feeding in the X-axis direction along the pair of guide rails 21.

於X軸台22的上部，係可在Z軸周圍旋轉地設置有將封裝基板W作保持的吸盤台25。於吸盤台25的台基底26上，係可裝卸地安裝有封裝基板W用之保持治具27。保持治具27，係為因應於封裝基板W之種類所準備的板狀治具，每次加工對象之封裝基板W之種類改變時，可相對於台基底26來作更換安裝。又，保持治具27，係於不鏽鋼板的表面以胺基甲酸酯樹脂等形成樹脂層，藉由樹脂層來提高對於封裝基板W之保持性能。 On the upper part of the X-axis stage 22, a chuck stage 25 for holding the package substrate W is rotatably provided around the Z-axis. On the base 26 of the suction table 25, a holding jig 27 for the package substrate W is detachably mounted. The holding jig 27 is a plate-shaped jig prepared according to the type of the package substrate W. Each time the type of the package substrate W to be processed is changed, it can be replaced and installed with respect to the stage base 26. In addition, the holding jig 27 is formed with a resin layer made of urethane resin or the like on the surface of the stainless steel plate, and the holding performance of the package substrate W is improved by the resin layer.

於保持治具27的表面，係在與封裝基板W之分割預定線相對應的位置處形成讓切削手段40之切削刃 42的刀鋒退避的退避溝28(參照第3圖)，在藉由退避溝28區劃成格子狀的各區域形成複數個吸引口29(參照第3圖)。各吸引口29，係通過台基底26內的流路來連接於吸引源(未圖示)，藉由吸引口29所產生的負壓而使封裝基板W被吸引保持。分割前之封裝基板W，係藉由複數個吸引口29而被全體地保持，封裝基板W之分割後的晶片C，係藉由複數個吸引口29而被個別地保持。 On the surface of the holding jig 27, the cutting edge of the cutting means 40 is formed at a position corresponding to the planned dividing line of the package substrate W The retreat groove 28 (refer to FIG. 3) where the blade edge of 42 retreats has a plurality of suction ports 29 (refer to FIG. 3) in each area divided into a grid by the retreat groove 28. Each suction port 29 is connected to a suction source (not shown) through a flow path in the stage base 26, and the package substrate W is sucked and held by the negative pressure generated by the suction port 29. The package substrate W before division is held collectively by a plurality of suction ports 29, and the chip C after division of the package substrate W is individually held by a plurality of suction ports 29.

於基座10上，係被設置有以避開吸盤台25之移動路徑的方式而局部性開口的立壁部11。於立壁部11，係設置有使一對的切削手段40在Y軸方向及Z軸方向進行移動的分度(INDEX)進送手段30與切入進送手段35。分度進送手段30，係具有：被配置於立壁部11的前面之與Y軸方向平行的一對的導軌31、和可滑動地設置在一對的導軌31的Y軸台32。切入進送手段35，係具有：被配置於Y軸台32上之與Z軸方向平行的一對的導軌36、和可滑動地設置在一對的導軌36的Z軸台37。 The base 10 is provided with a standing wall 11 that is partially opened so as to avoid the movement path of the suction table 25. The vertical wall portion 11 is provided with an index (INDEX) feeding means 30 and a cut-in feeding means 35 that move the pair of cutting means 40 in the Y-axis direction and the Z-axis direction. The indexing and feeding means 30 includes a pair of guide rails 31 parallel to the Y-axis direction arranged on the front surface of the vertical wall portion 11, and a Y-axis table 32 slidably provided on the pair of guide rails 31. The cutting and feeding means 35 includes a pair of guide rails 36 arranged on the Y-axis table 32 parallel to the Z-axis direction, and a Z-axis table 37 slidably provided on the pair of guide rails 36.

於Y軸台32的背面側係形成螺帽部，於此螺帽部螺合有滾珠螺桿33。又，於Z軸台37的背面側係形成螺帽部，於此螺帽部螺合有滾珠螺桿38。於Y軸台32用的滾珠螺桿33、Z軸台37用的滾珠螺桿38之一端部，係分別連結有驅動馬達34、39。藉由此等驅動馬達34、39，各個滾珠螺桿33、38會被旋轉驅動，藉由此，被固定於Z軸台37處的一對的切削手段40，係沿著導軌31、36在Y軸方向進行分度進送，並在Z軸方向進行切入進 送。 A nut portion is formed on the back side of the Y-axis base 32, and a ball screw 33 is screwed to the nut portion. In addition, a nut portion is formed on the back side of the Z-axis base 37, and a ball screw 38 is screwed to this nut portion. Drive motors 34 and 39 are connected to one end of the ball screw 33 for the Y-axis table 32 and the ball screw 38 for the Z-axis table 37, respectively. With these drive motors 34, 39, the respective ball screws 33, 38 are rotationally driven, and by this, a pair of cutting means 40 fixed to the Z-axis table 37 are along the guide rails 31, 36 in Y Index feed in the axis direction, and cut in in the Z axis direction give away.

一對的切削手段40，係構成為將切削刃42可旋轉地安裝於從殼體41突出的心軸(未圖示)之前端處。切削刃42，例如，係將金剛石研磨粒以樹脂黏合劑固定而形成為圓板狀。又，於各切削手段40之殼體41處，係設置有對封裝基板W的上面進行攝像的攝像手段43，根據攝像手段43的攝像影像，使切削刃42對於封裝基板W而作對位。於這種切削裝置1中，係藉由使吸盤台25相對於切削刃42而進行切削進送，來沿著分割預定線，而將封裝基板W分割成各個晶片C(參照第3圖)。 The pair of cutting means 40 is configured to rotatably attach the cutting edge 42 to the front end of a spindle (not shown) protruding from the housing 41. The cutting edge 42 is formed in a disc shape by fixing diamond abrasive grains with a resin adhesive, for example. In addition, the housing 41 of each cutting means 40 is provided with an imaging means 43 for imaging the upper surface of the packaging substrate W. Based on the image captured by the imaging means 43, the cutting edge 42 is aligned with the packaging substrate W. In such a cutting device 1, the chuck table 25 is cut and fed with respect to the cutting edge 42 to divide the package substrate W into individual wafers C along the planned dividing line (see FIG. 3).

另外，於本實施形態之切削裝置1中，係為了使來自封裝基板W之晶片C的拾取數目增加，而使用有與對角線450mm、600mm等之大尺寸之封裝基板W相對應的吸盤台25。封裝基板W之分割後的晶片C，雖從吸盤台25移到收容托盤50(參照第4圖)而送出到後續的處理裝置，但在如一般的處置方法般地以拾取器等來將晶片1個個逐一拾取的情況時，對於收容托盤50之晶片C的收容所需要的時間係會變長。因此，係有著就算是晶片C之拾取數目增加生產效率也仍有所降低的問題。 In addition, in the cutting device 1 of this embodiment, in order to increase the number of picks of the wafers C from the package substrate W, a chuck table corresponding to the large-size package substrate W with a diagonal of 450 mm, 600 mm, etc. is used 25. The divided wafer C of the package substrate W is moved from the chuck table 25 to the storage tray 50 (refer to FIG. 4) and sent to the subsequent processing device. However, the wafer C is transported by a picker or the like like a general processing method. In the case of picking up one by one, the time required for the storage of the wafer C of the storage tray 50 becomes longer. Therefore, there is a problem that even if the number of pickups of the wafer C increases, the production efficiency is still reduced.

於此情況中，雖亦可考慮如第2圖所示般，使用大型的搬送墊70來將封裝基板W之分割後的晶片C整批收容於收容托盤的構造，但必須與封裝基板W之大型化相配合來準備比規格尺寸(處置裝置規格尺寸)更大的收容托盤71。同樣地，後續的檢查裝置或卸載機，也必 須配合封裝基板W之大型化而從既有的裝置構造作變更。如此般，在由晶片C之整批搬送所致之收容時間的短縮化與利用既有之構造來使成本減低之間，係存在有取捨(TRADEOFF)關係。 In this case, although it is also possible to consider a structure in which a large transfer pad 70 is used to house the divided wafers C of the package substrate W in the receiving tray in batches as shown in FIG. 2, it must be in line with the package substrate W In accordance with the enlargement, the storage tray 71 larger than the standard size (treatment device standard size) is prepared. Similarly, subsequent inspection devices or unloaders must also The structure of the existing device must be changed in accordance with the enlargement of the package substrate W. In this way, there is a trade-off between the shortening of the storage time caused by the bulk transfer of the wafer C and the use of the existing structure to reduce the cost.

因此，於本實施形態之處置方法中，係僅從封裝基板W之分割後的全部晶片C取出可收容於收容托盤50的個數，並整批收容於收容托盤50(參照第4圖)。亦即，由於係每次以可收容於收容托盤50的個數之單位來整批收容複數個晶片C，因此，可縮短對於收容托盤50之晶片C的收容時間。又，由於係可持續使用規格尺寸之收容托盤50，因此無須將後續的處理裝置從既有的裝置構造作變更，設備成本亦不會增加。因而，無需增加設備成本，而可提昇生產性。 Therefore, in the disposal method of the present embodiment, only the number of wafers C that can be accommodated in the receiving tray 50 is taken out from all the divided wafers C of the package substrate W, and stored in the receiving tray 50 in batches (see FIG. 4). That is, since a plurality of wafers C are accommodated in batches in units of the number of accommodating trays 50 each time, the accommodating time for the wafers C of the accommodating tray 50 can be shortened. In addition, since the storage tray 50 of the standard size can be used continuously, there is no need to change the subsequent processing device from the existing device structure, and the equipment cost will not increase. Therefore, there is no need to increase equipment costs, and productivity can be improved.

以下，參照第3圖至第5圖，針對封裝基板之處置方法進行說明。第3圖係展示本實施形態之分割步驟的一例，第4圖係展示本實施形態之整批接著步驟的一例，第5圖係展示本實施形態之搬送步驟的一例。另外，第4圖A係展示整批接著步驟之拾取動作的一例，第4圖B係展示整批接著步驟之收容動作的一例。另外，雖於吸盤台設定有與收容托盤之外形尺寸相配合的複數個區域，但於第3圖及第4圖中僅圖示有複數區域中之排列在X軸方向上的3個區域。 Hereinafter, with reference to FIGS. 3 to 5, the method of handling the package substrate will be described. Fig. 3 shows an example of the division step of the present embodiment, Fig. 4 shows an example of the batch subsequent step of the present embodiment, and Fig. 5 shows an example of the transport step of the present embodiment. In addition, Fig. 4A shows an example of the pick-up operation of the whole batch of subsequent steps, and Fig. 4B shows an example of the storage operation of the entire batch of subsequent steps. In addition, although a plurality of regions matching the outer dimensions of the storage tray are set on the suction table, only three regions of the plurality of regions arranged in the X-axis direction are shown in Figures 3 and 4.

如第3圖所示般，首先實施分割步驟。在分割步驟中，於切削裝置1(參照第1圖)之吸盤台25上載置 封裝基板W，經由保持治具27，大片的封裝基板W被吸引保持在吸盤台25上。封裝基板W，係被形成為相較於收容托盤50(參照第4圖)之規定外形而更大的尺寸，例如，被形成為可從1片的封裝基板W而取出收容托盤50之收容個數的數倍之晶片C的尺寸。因此，吸盤台25及保持治具27，係與封裝基板W的尺寸相配合而形成為大型。 As shown in Figure 3, first perform the segmentation step. In the dividing step, place on the suction table 25 of the cutting device 1 (refer to Figure 1) The package substrate W is sucked and held on the chuck table 25 by the large package substrate W via the holding jig 27. The package substrate W is formed to have a larger size than the prescribed outer shape of the storage tray 50 (refer to FIG. 4). For example, it is formed to be able to take out the storage tray 50 from one package substrate W. Several times the size of the chip C. Therefore, the chuck table 25 and the holding jig 27 are formed to be large in accordance with the size of the package substrate W.

若一對的切削刃42被對位於封裝基板W之分割預定線L(參照第1圖)，則切削刃42被降至可切斷封裝基板W的高度，吸盤台25係相對於此切削刃42而進行切削進送。藉由反覆進行切削進送，而將吸盤台25上的封裝基板W沿著各分割預定線L作切削並分割成各個晶片C。此時，由於在保持治具27處係對應於各個晶片C來形成有吸引口29，因此在切削中從封裝基板W分離後的晶片C會個別地被吸引保持於吸引口29，晶片C不會從保持治具27而脫落。 If the pair of cutting edges 42 are aligned on the planned dividing line L of the package substrate W (refer to FIG. 1), the cutting edge 42 is lowered to a height capable of cutting the package substrate W, and the chuck table 25 is opposed to this cutting edge 42 while cutting and feeding. By repeatedly performing cutting and feeding, the package substrate W on the chuck table 25 is cut along each planned division line L and divided into individual wafers C. At this time, since the suction port 29 is formed in the holding jig 27 corresponding to each wafer C, the wafer C separated from the package substrate W during cutting is individually attracted and held by the suction port 29, and the wafer C is not It will fall off the holding fixture 27.

又，吸盤台25上，係依據收容托盤50(參照第4圖)的外形尺寸，而被區分成複數個區域A1-An(於第3圖中係僅圖示區域A1-A3)。亦即，封裝基板W之分割後的晶片C，係以收容托盤50之收容個數的單位，而在吸盤台25上被分成複數個區域A1-An來被保持。由於封裝基板W之全部晶片C係以收容托盤50之外形尺寸為基準來劃分區域，因此成為可將全部晶片C分成複數個收容托盤50來進行搬送。因而，成為可利用以收容托盤50作 為1個處理單位之後續的處理裝置65(參照第5圖)，於每個收容托盤50對晶片C進行處理。 In addition, the suction table 25 is divided into a plurality of areas A1-An (only areas A1-A3 shown in FIG. 3) according to the external dimensions of the storage tray 50 (refer to FIG. 4). That is, the divided wafer C of the package substrate W is divided into a plurality of areas A1-An on the chuck table 25 in units of the number of storage trays 50 to be held. Since all the wafers C of the package substrate W are divided into areas based on the outer dimensions of the storage tray 50, it becomes possible to divide all the wafers C into a plurality of storage trays 50 and transfer them. Therefore, it becomes available to use the storage tray 50 as The subsequent processing device 65 (refer to FIG. 5), which is one processing unit, processes the wafer C in each storage tray 50.

如第4圖A及第4圖B所示般，在實施分割步驟之後，係實施整批接著步驟。如第4圖A所示般，在整批接著步驟前半段之拾取動作中，係使用與收容托盤50之晶片收容部51相對應的尺寸之晶片移送墊45，來實施晶片C的拾取。晶片移送墊45的保持面，係為與吸盤台25上之1個區域相對應的大小，在與區域內之各晶片C相對應的位置處形成有吸引口46。各吸引口46，係經由開閉閥47而連接於吸引源48，藉由開閉閥47的開閉來切換吸引力的供給及阻斷。 As shown in Fig. 4A and Fig. 4B, after the division step is implemented, the entire batch of subsequent steps is implemented. As shown in FIG. 4A, in the picking operation of the first half of the whole batch subsequent step, the wafer transfer pad 45 of the size corresponding to the wafer receiving portion 51 of the receiving tray 50 is used to pick up the wafer C. The holding surface of the wafer transfer pad 45 has a size corresponding to one area on the chuck table 25, and a suction port 46 is formed at a position corresponding to each wafer C in the area. Each suction port 46 is connected to a suction source 48 via an opening/closing valve 47, and the opening and closing of the opening/closing valve 47 switches the supply and interruption of suction.

此晶片移動墊45係被移動到吸盤台25的上方，而定位於吸盤台25上的區域A1處。若晶片移送墊45之各吸引口46被定位於各晶片C之各者的正上方，則晶片移送墊45會朝向吸盤台25來下降。藉由使晶片移送墊45靠近各晶片C，封裝基板W之全部晶片C中之可收容於晶片收容部51中的個數之晶片C會被吸引保持。此時，以吸盤台25所致之晶片C的吸引係停止，而不會阻礙由晶片移送墊45所致之晶片C的拾取。 The wafer moving pad 45 is moved above the suction table 25 and is positioned at the area A1 on the suction table 25. If the suction ports 46 of the wafer transfer pad 45 are positioned directly above each of the wafers C, the wafer transfer pad 45 will descend toward the suction table 25. By bringing the chip transfer pad 45 close to each chip C, the number of chips C that can be accommodated in the chip accommodating portion 51 among all the chips C of the package substrate W is attracted and held. At this time, the suction of the wafer C by the chuck table 25 is stopped without hindering the pickup of the wafer C by the wafer transfer pad 45.

如第4圖B所示般，在整批接著步驟前半段之收容動作中，複數個晶片C係藉由晶片移送墊45而被收容在具備有規定外形的晶片收容部51之收容托盤50中。於收容托盤50中，規定外形之晶片收容部51係被形成為凹狀，晶片收容部51，係以可供晶片移送墊45進入 的大小而作開口。又，於晶片收容部51的底面，係配設有薄片狀的黏著材52，於黏著材52的黏著面53處載置晶片C，藉此而防止由收容托盤50所致之搬送中的晶片C之位置偏移。黏著材52，係以例如UMI股份有限公司製之Flex carrier(註冊商標)所構成，藉由雙面膠帶等被貼附於晶片收容部51的底面。另外，黏著材52，亦可取代Flex carrier等之黏著板，而以外線硬化樹脂或熱硬化樹脂等之樹脂薄片或接著劑所構成。 As shown in Fig. 4B, in the first half of the accommodating operation of the entire batch following the step, a plurality of wafers C are accommodated in the accommodating tray 50 provided with the wafer accommodating portion 51 of a predetermined shape by the wafer transfer pad 45 . In the accommodating tray 50, the wafer accommodating portion 51 of a predetermined shape is formed in a concave shape, and the wafer accommodating portion 51 is provided for the wafer transfer pad 45 to enter The size of the opening. In addition, a sheet-like adhesive material 52 is arranged on the bottom surface of the wafer accommodating portion 51, and the wafer C is placed on the adhesive surface 53 of the adhesive material 52, thereby preventing the wafer from being transported due to the receiving tray 50 The position of C is offset. The adhesive material 52 is made of, for example, Flex carrier (registered trademark) manufactured by UMI Co., Ltd., and is attached to the bottom surface of the chip housing portion 51 by a double-sided tape or the like. In addition, the adhesive material 52 may replace an adhesive plate such as a Flex carrier, and may be composed of a resin sheet or an adhesive such as an outer line hardening resin or a thermosetting resin.

晶片移送墊45被移動到此收容托盤50的上方，以晶片移送墊45所吸引保持的複數個晶片C被定位在晶片收容部51的正上方。晶片移送墊45係以保持著複數個晶片C的狀態朝向收容托盤50來下降，複數個晶片C被按壓於晶片收容部51之黏著材52的黏著面53，而整批被接著於黏著面53。如此這般，吸盤台25上之全部晶片C中之區域A1之複數個晶片C係整批被移到收容托盤50。藉由反覆進行此整批接著步驟，吸盤台25上之全部晶片C係被區分並收容於複數個收容托盤50中。 The wafer transfer pad 45 is moved above the storage tray 50, and the plurality of wafers C sucked and held by the wafer transfer pad 45 are positioned directly above the wafer storage portion 51. The wafer transfer pad 45 is lowered toward the receiving tray 50 while holding a plurality of wafers C. The plurality of wafers C are pressed on the adhesive surface 53 of the adhesive material 52 of the wafer receiving portion 51, and the whole batch is adhered to the adhesive surface 53 . In this way, the plurality of wafers C in the area A1 among all the wafers C on the chuck table 25 are moved to the receiving tray 50 in a batch. By repeating this whole batch of subsequent steps, all the chips C on the suction table 25 are separated and contained in a plurality of receiving trays 50.

如第5圖所示般，在實施整批接著步驟之後，係實施搬送步驟。在搬送步驟中，於晶片收容部51內接著有複數個晶片C的收容托盤50，係藉由輸送帶等之搬送機構60而朝向後續的處理裝置65被搬送。在後續的處理裝置65中，由於係在每個規格尺寸之收容托盤50對晶片C進行處理，因此成為可無須改變既有的裝置構造，而對於複數個晶片C實施後續的處理。因而，針對後 續的裝置，無關於封裝基板W之大型化，而可藉由挪用既有的裝置來減低成本。 As shown in Figure 5, after the entire batch of joining steps is performed, the conveying step is performed. In the transport step, the storage tray 50 to which a plurality of wafers C are connected in the wafer storage section 51 is transported toward the subsequent processing device 65 by a transport mechanism 60 such as a conveyor belt. In the subsequent processing device 65, since the wafer C is processed on the storage tray 50 of each specification size, it becomes possible to perform subsequent processing on a plurality of wafers C without changing the existing device structure. Therefore, after The continued device does not concern the enlargement of the package substrate W, but can reduce the cost by embezzling existing devices.

如上述般，於本實施形態之封裝基板W之處置方法中，藉由晶片移送墊45，封裝基板W之全部晶片C中之可收容於晶片收容部51中的個數之晶片C係被吸引保持，而複數個晶片C係整批被接著於晶片收容部51的黏著面53。由於是將封裝基板W之全部晶片C分成複數次來整批收容於收容托盤50中，因此相較於將晶片1個個地收容於收容托盤50中的構造，可大幅地縮短收容時間。又，即使在封裝基板W為大片基板的情況，亦由於封裝基板W之全部晶片C係被分在複數個收容托盤50中而被搬送至後續的處理裝置65，因此沒有必要使後續的處理裝置65配合封裝基板W的尺寸而大型化。如此般，封裝基板W之分割前係可藉由將基板尺寸加大而增加晶片C的拾取數目，封裝基板W之分割後係可藉由分成規定外形之搬送托盤50來進行搬送而抑制對於既有的生產線之影響。 As described above, in the processing method of the package substrate W of this embodiment, the number of chips C that can be accommodated in the chip accommodating portion 51 among all the chips C of the package substrate W is attracted by the chip transfer pad 45 Hold, and a plurality of wafers C are attached to the adhesive surface 53 of the wafer accommodating portion 51 in a batch. Since all the wafers C of the package substrate W are divided into a plurality of times to be stored in a batch in the receiving tray 50, the storage time can be greatly shortened compared with the structure in which the wafers are stored in the receiving tray 50 one by one. In addition, even when the package substrate W is a large-sized substrate, since all the wafers C of the package substrate W are divided into a plurality of storage trays 50 and transferred to the subsequent processing device 65, there is no need for the subsequent processing device 65 is enlarged according to the size of the package substrate W. In this way, the size of the package substrate W can be increased by increasing the size of the substrate to increase the number of pickups of the chip C, and the package substrate W can be transported by dividing it into a transport tray 50 of a predetermined shape after the division, thereby suppressing the impact The impact of some production lines.

另外，本發明並不限定於上述實施形態，亦可進行各種變更來實施。於上述實施形態中，針對添附圖式所圖示的大小或形狀等，並不限定於此，可在發揮本發明之效果的範圍內進行適當變更。其他，只要在不脫離本發明之目的的範圍內，可進行適當變更來實施。 In addition, the present invention is not limited to the above-mentioned embodiment, and can be implemented with various modifications. In the above-mentioned embodiment, the size, shape, etc. shown in the attached drawing formula are not limited to this, and can be appropriately changed within the range where the effects of the present invention are exhibited. Otherwise, as long as it does not deviate from the purpose of the present invention, it can be implemented with appropriate changes.

例如，於上述之實施形態中，雖設為在分割步驟中，藉由切削裝置1，封裝基板W被分割成各個晶片 C的構造，但並不限定於此構造。在分割步驟中，只要封裝基板W沿著分割預定線被分割成各個晶片C即可，例如，亦可藉由雷射加工將封裝基板W分割成各個晶片C。 For example, in the above-mentioned embodiment, although it is assumed that in the dividing step, the package substrate W is divided into individual chips by the cutting device 1. The structure of C is not limited to this structure. In the dividing step, the packaging substrate W may be divided into individual wafers C along the planned dividing line. For example, the packaging substrate W may be divided into individual wafers C by laser processing.

又，於上述之實施形態中，雖設為在搬送步驟中，藉由輸送帶等之搬送裝置60，將收容托盤50朝向後續的處理裝置65作搬送的構造，但並不限定於此構造。搬送機構60，係只要可將收容托盤50進行搬送的構造即可，例如，亦可為利用線性馬達所構成。又，在搬送步驟中，並不限於藉由搬送機構60來搬送收容托盤50的構造，亦可由操作員來搬送收容托盤50。進而，在搬送步驟中，將收容托盤50以搬送墊搬送至後續的裝置等亦可。 In addition, in the above-mentioned embodiment, although it is set as the structure in which the storage tray 50 is conveyed toward the subsequent processing apparatus 65 by the conveying apparatus 60, such as a conveyor belt, in a conveyance process, it is not limited to this structure. The transport mechanism 60 may be any structure as long as it can transport the storage tray 50, and for example, it may be constructed using a linear motor. In addition, in the transport step, the structure is not limited to the structure in which the storage tray 50 is transported by the transport mechanism 60, and the storage tray 50 may be transported by an operator. Furthermore, in the transport step, the storage tray 50 may be transported to a subsequent device or the like with a transport mat.

[產業上之可利用性] [Industrial availability]

如以上說明般地，本發明係具有可縮短複數個晶片的對於收容托盤之收容時間，並且抑制後續的處理裝置之大型化的效果，尤其是，可用於對角線超過450mm、600mm的封裝基板之處置方法。 As explained above, the present invention has the effect of shortening the storage time of a plurality of chips for the storage tray and suppressing the subsequent enlargement of the processing device. In particular, it can be used for package substrates with diagonals exceeding 450mm and 600mm. The disposal method.

25‧‧‧吸盤 25‧‧‧Sucker

27‧‧‧保持治具 27‧‧‧Holding fixture

45‧‧‧晶片移送墊 45‧‧‧Chip transfer pad

46‧‧‧吸引口 46‧‧‧Suction

47‧‧‧開閉閥 47‧‧‧Open and close valve

48‧‧‧吸引源 48‧‧‧Attraction source

50‧‧‧收容托盤 50‧‧‧Containing tray

51‧‧‧晶片收容部 51‧‧‧Chip Storage

52‧‧‧黏著材 52‧‧‧Adhesive material

53‧‧‧黏著面 53‧‧‧Adhesive surface

Claims (1)

一種封裝基板之處置方法，其係將形成有複數之分割預定線之封裝基板分割成複數個晶片，並將晶片收容於具備有具有規定外形的晶片收容部及被配設於該晶片收容部的黏著材之收容托盤中，其特徵為，具備有：保持步驟，係將較該收容托盤之規定外形而更大型尺寸的該封裝基板藉由吸盤台來作吸引保持；和分割步驟，係在藉由該吸盤台而將該封裝基板作了吸引保持的狀態下，沿著該分割預定線來將該封裝基板分割成複數個晶片；和拾取步驟，係在實施該分割步驟之後，將該封裝基板之全部晶片中之可收容於該晶片收容部中的個數之晶片藉由與該晶片收容部相對應之尺寸的晶片移送墊來作拾取；和整批接著步驟，係在實施該拾取步驟之後，使該晶片移送墊移動至該收容托盤之上方，並將所拾取了的該複數之晶片朝該晶片收容部之該黏著材的黏著面作按壓，而使該複數之晶片整批接著於該黏著面；以及搬送步驟，係在實施該整批接著步驟之後，將於該晶片收容部內接著有該複數之晶片的該收容托盤進行搬送，從該封裝基板所被分割之各個的晶片，係以該收容托盤之該晶片收容部之收容個數的單位，而在該吸盤台上被區分成複數之區域地被作保持，針對該各個的區域之每一者，而反覆進行複數次之該 拾取步驟、該整批接著步驟以及該搬送步驟。 A processing method for a package substrate, which is to divide a package substrate formed with a plurality of predetermined dividing lines into a plurality of chips, and to accommodate the chips in a chip accommodating part provided with a predetermined shape and arranged in the chip accommodating part The holding tray of the adhesive material is characterized in that it has: a holding step of holding the package substrate with a larger size than the prescribed shape of the holding tray by a suction table for suction and holding; and a dividing step, which is In a state where the package substrate is sucked and held by the chuck table, the package substrate is divided into a plurality of wafers along the planned dividing line; and the pickup step is performed after the division step is performed, and the package substrate Among all the chips, the number of wafers that can be accommodated in the wafer accommodating portion is picked up by a wafer transfer pad of a size corresponding to the wafer accommodating portion; and the whole batch of subsequent steps is performed after the pickup step , Move the wafer transfer pad to the top of the receiving tray, and press the picked up plurality of wafers toward the adhesive surface of the adhesive material of the wafer receiving portion, so that the plurality of wafers are attached to the entire batch Adhesive surface; and the transport step, after the entire batch of subsequent steps are carried out, the receiving tray with the plurality of wafers in the wafer receiving portion will be transported, and each wafer divided from the package substrate is The storage tray is divided into a plurality of areas on the chuck table and held in units of the number of storage in the wafer storage portion. For each of the respective areas, the multiple times are repeated The picking step, the whole batch following step, and the transport step.
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JPH11330103A (en) * 1998-05-11 1999-11-30 Matsushita Electric Ind Co Ltd Part transfer method and device
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