TWI713515B - 用來熟化至少一部份施加於基板之光阻劑的方法與裝置 - Google Patents

用來熟化至少一部份施加於基板之光阻劑的方法與裝置 Download PDF

Info

Publication number
TWI713515B
TWI713515B TW105111501A TW105111501A TWI713515B TW I713515 B TWI713515 B TW I713515B TW 105111501 A TW105111501 A TW 105111501A TW 105111501 A TW105111501 A TW 105111501A TW I713515 B TWI713515 B TW I713515B
Authority
TW
Taiwan
Prior art keywords
substrate
photoresist
support
curing
time period
Prior art date
Application number
TW105111501A
Other languages
English (en)
Other versions
TW201642051A (zh
Inventor
歐瑪 法克
迪特里希 托尼斯
Original Assignee
德商蘇士微科技印刷術股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商蘇士微科技印刷術股份有限公司 filed Critical 德商蘇士微科技印刷術股份有限公司
Publication of TW201642051A publication Critical patent/TW201642051A/zh
Application granted granted Critical
Publication of TWI713515B publication Critical patent/TWI713515B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Control Of Resistance Heating (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

本發明關於一種用來熟化至少一部分施加於基板(14)之光阻劑(12)的方法，包括下列步驟。塗布著光阻劑(12)的基板(14)係配置於支撐件(16)上。光阻劑(12)接受適當溫度，用於將光阻劑(12)進行第一預定時間週期熟化。經過第一預定時間週期後，將基板(14)從支撐件(16)升起、旋轉、重新放置於支撐件(16)上及接受適當溫度，用於將光阻劑(12)進行第二預定時間週期熟化。本發明也關於一種用來熟化至少一部分施加於基板(14)之光阻劑(12)的裝置，包含腔室(20)、配置於腔室(20)中且可供基板(14)配置於其上之支撐件(16)、及用來在光阻劑(12)之熟化之第一及第二階段之間旋轉基板(14)的裝置(22)。

Description

用來熟化至少一部份施加於基板之光阻劑的方法與裝置
本發明關於一種用來熟化至少一部分施加於基板之光阻劑的方法。本發明進一步關於一種用來熟化至少一部分施加於基板之光阻劑的裝置。
根據本發明之方法及根據本發明之裝置係使用關於微影蝕刻法，藉此得以製成微結構組件(例如，半導體晶片或微機電系統(MEMS))。此類型之製造方法之第一步驟包含使用光阻劑(抗蝕劑)塗布一基板(晶圓)。光阻劑隨後曝光，例如透過一遮罩，變成特定範圍之光阻劑物理及/或化學性質。光阻劑接著去除一部分。
在光阻劑去除一部分之前，其需要熟化。這可以在光阻劑曝光及後續實際熟化之前，使用幾個步驟來進行，例如，預先熟化(軟烘)。
熟化時，使用光阻劑塗布之基板配置於一加熱容器(熱板)上，依此使得光阻劑中所含溶劑之較多或較少部 分在供熱之作用下蒸發。
惟，經發現光阻劑在(部分或全部)熟化後有不同厚度，即使其在塗布期間已均勻散布於基板上。此點對於隨後欲製成之徵結構有不利的影響。
本發明之一目的在提供一種方法及裝置，藉此使光阻劑可在基板上熟化，依此使其盡可能有均一厚度。
為了達成此目的，本發明提供一種用來熟化至少一部分施加於基板之光阻劑的方法，包括下列步驟。塗布著光阻劑的基板係配置於支撐件上。光阻劑接受適當溫度，用於將光阻劑進行第一預定時間週期熟化。經過第一預定時間週期後，將基板從支撐件升起、旋轉、重新放置於支撐件上及接受適當溫度，用於將光阻劑進行第二預定時間週期熟化。為了達成所述之目的，本發明也關於一種用來熟化至少一部分施加於基板之光阻劑的裝置，包含腔室、配置於腔室中且可供基板配置於其上之支撐件、及用來在光阻劑之熟化之第一及第二階段之間相對於支撐件旋轉基板的裝置。
本發明係基於發現到支撐件之方位誤差常造成熟化之光阻劑有非均一厚度。簡而言之，若支撐件傾斜配置，光阻劑即在重力作用下朝向下側行進。當光阻劑熟化時，此將造成較大的層厚度。本發明係基於在光阻劑熟化期間旋轉基板的下列理念，使光阻劑有機會本身均勻分布在基板 上。
在一簡示範例中，假設供基板配置於其上以便將光阻劑熟化的支撐件係定位成略為傾斜，依此使光阻劑從右流動至左。一旦經過第一預定時間週期後，將基板旋轉180°，使先前配置於左側上之基板區域現在配置於支撐件之右側上。結果，在第一時間週期期間流到此區域之光阻劑即依反方向流回。若第一及第二時間週期適當選擇，可以彌補支撐件之傾斜定位影響(至少到一可觀程度)。
在光阻劑熟化期間，基板原本即可不僅旋轉一次，而是一再重覆。在本文中，也可以使用基板旋轉之複雜「模式」，例如使用不同角度及不同時間週期。
在本發明之一實施例中，時間週期彼此不同。特別是，在本文中可以提供一在熟化時之較早時間點所用的時間週期較短於稍後的時間週期。此係考量於光阻劑之可流動性隨著熟化而變得越來越小。因此，依據旋轉180°之上述範例，就第二時間週期期間對第一時間週期期間流回之相同量光阻劑而言，第二時間週期須較長於第一時間週期。
在本發明之一實施例中，在本文內支撐件配置於一腔室中且基板從腔室移出以進行旋轉。此優點在於有較多空間可供處理腔室外之基板。
在本發明之一實施例中，光阻劑熟化後，基板放置於一固持件上且冷卻，基板係在冷卻期間相對於固持件旋轉至少一次。此實施例接續本發明，藉此使得供支撐件放置 於其上的組件(在此為冷卻期間將基板固持之固持件)之方位誤差可藉由依預定時間模式差異地放置基板來補償。
若支撐件為固定式且基板以不同方位配置在支撐件上，則用於旋轉基板的裝置較佳為一處理裝置，其可從支撐件接收基板並將其再次放置以進行旋轉。此可用自動方式旋轉基板。
處理裝置原則上可以形成為本身旋轉基板。另者，處理裝置可包含一轉盤，供基板可在過渡階段放置於其上。此可將處理裝置(例如，機械臂)組構成較簡化之機械性，因為其並不需要旋轉基板。
為了加速熟化光阻劑，支撐件較佳備有一加熱器。此係一習知構造(熱板)，藉此使光阻劑可根據預定溫度輪廓利用熱傳導從支撐件經過基板來加熱。
另者或除此之外，可設置一加熱裝置，藉此使腔室中之環境溫度得以控制。依此，熱亦可從上面供給至光阻劑。
在本發明之一實施例中，設置一控制系統，其具有可儲存熟化輪廓之記憶體。此熟化輪廓含有時間週期及旋轉角度等資訊，可使熟化之光阻劑在基板上盡可能有均一之層厚度。此類型之熟化輪廓例如可在裝置安裝於客戶後藉由許多測試運作來判定。藉由測試運作，例如具有由製造商預定之不同熟化輪廓的塗布基板即可做處理。接著，測量不同基板上之熟化光阻劑的層厚度。接著，選擇任一熟化輪廓，盡可能達成所想要的熟化光阻劑的層厚度，或進 一步重覆循環，藉此使儲存於記憶體中之熟化輪廓更進一步精確、使用測得之層厚度實施。
10‧‧‧裝置
12‧‧‧光阻劑
14‧‧‧基板
16‧‧‧支撐件
18‧‧‧加熱器
20‧‧‧腔室
22‧‧‧處理裝置
24‧‧‧機械臂
26‧‧‧抓持器
28‧‧‧轉盤
30‧‧‧步進馬達
文後，本發明即參考附圖中所示之實施例詳細揭露，其中：圖1概略揭示本發明之一裝置；及圖2係根據本發明之方法之示意方塊圖。
圖1揭示一裝置10，用來熟化至少一部分塗布於一基板14之光阻劑12。基板14可以是一在後續製程中微結構之晶圓。在本文中，光阻劑12適度曝光，以致使其物理及/或化學性質改變且其可在後續步驟中去除一部分。
為了能夠均勻施加光阻劑12於基板14之表面上，其係極低黏度，溶劑比例高。為了進一步處理，部分溶劑初期必須從光阻劑12去除。為了此目的，以光阻劑12塗布之基板14係放置於一備有加熱器18之支撐件16上。藉由加熱器18，熱即供給至基板14及因此供給至光阻劑12，且此加速了將含在光阻劑12中之溶劑蒸發及光阻劑12熟化的過程。
若另有需要，可以設置一加熱裝置(圖1中未示)，藉此使支撐件16所在之一腔室20內的環境可以加熱。
通常會出現的裝置之其他組件(例如，一用來去除充滿溶劑之氣體並供給沖洗氣體的吸氣管)在此並未揭示，因為其對於本發明之瞭解而言並非必要。
吾人無法一直確保支撐件16絕對呈水平方位。一旦有些微方位誤差時，光阻劑即在重力作用下略為流到較低之側邊。為了彌補此情況，本發明提供基板14初始維持在支撐件16上，光阻劑12在第一時間週期略為熟化。隨後，基板14與位於其上之光阻劑12旋轉經過一預定角度，且光阻劑12在第二時間週期熟化(請同時參閱圖2)。若有需要，此順序可重覆多次。在本文中，在基板14旋轉前，光阻劑12先熟化之時間週期期間可以相異。
原則上，可在光阻劑12熟化期間的各時間週期之間起以手動旋轉基板14。惟，基板14之重新定位較佳為自動。
一用於旋轉基板14之裝置可用於此目的，且在此情況中係組構成一處理裝置22。處理裝置包含一機械臂24，機械臂具有一抓持器26，基板14即藉此放置於支撐件16上及移除。處理裝置22進一步包含一轉盤28，其係由一步進馬達30驅動。欲旋轉基板14經過一所想要的角度，可以藉由機械臂24從腔室移出、放置於轉盤上，在此處由該轉盤旋轉經過所想要的角度，且隨後由機械臂24放回腔室20中之支撐件16上。
一旦光阻劑(在支撐件上的不同方位)充分熟化後，通常即在一控制情況下冷卻。基於此目的，其放置於一固 持件上(圖中未示)，在此處基板14同樣可依預定模式規律旋轉，以利補償固持件之任意方位誤差(請參閱圖2)。
10‧‧‧裝置
12‧‧‧光阻劑
14‧‧‧基板
16‧‧‧支撐件
18‧‧‧加熱器
20‧‧‧腔室
22‧‧‧處理裝置
24‧‧‧機械臂
26‧‧‧抓持器
28‧‧‧轉盤
30‧‧‧步進馬達

Claims (9)

  1. 一種用來熟化至少一部分施加於基板(14)之光阻劑(12)的方法，包括下列步驟：塗布著該光阻劑(12)的該基板(14)係配置於支撐件(16)上；該光阻劑(12)接受適當溫度，用於將該光阻劑(12)進行第一預定時間週期熟化；經過該第一預定時間週期後，將該基板(14)從該支撐件(16)升起、旋轉、重新放置於該支撐件(16)上並接受適當溫度，用於將該光阻劑(12)進行第二預定時間週期熟化。
  2. 如申請專利範圍第1項之方法，其中，經過該第二預定時間週期後，該基板(14)再次旋轉且接受適當溫度，用於將該光阻劑(12)進行第三預定時間週期熟化，及其中，此旋轉及進一步熟化之順序為選擇性地重覆。
  3. 如申請專利範圍第1項之方法，其中，該時間週期彼此不同，且該第一時間週期較短於該第二時間週期。
  4. 如申請專利範圍第1項之方法，其中，該支撐件(16)配置於腔室(20)中且該基板(14)從該腔室(20)移出以進行旋轉。
  5. 如申請專利範圍第1項之方法，其中，在該光阻劑(12)熟化後，該基板(14)放置於固持件上且冷卻，該基板(14)係在冷卻期間相對於該固持件旋轉至少一次。
  6. 一種用來熟化至少一部分施加於基板(14)之光阻劑(12)的裝置，包含腔室(20)、配置於該腔室(20)中且可供該基板(14)配置於其上之支撐件(16)、及用來在該光阻劑(12)之熟化之第一階段及第二階段之間相對於該支撐件(16)旋轉該基板(14)的裝置(22)，其中，用來旋轉該基板(14)的該裝置係處理裝置(22)，其可從該支撐件(16)接收該基板(14)並將其再次放置以進行旋轉，且其中，該處理裝置(22)可包含轉盤(28)，供該基板(14)可在過渡階段放置於其上。
  7. 如申請專利範圍第6項之裝置，其中，該支撐件(16)設有加熱器(18)。
  8. 如申請專利範圍第6項之裝置，其中，設置有加熱裝置，藉此使該腔室(20)中之環境溫度得以控制。
  9. 如申請專利範圍第6項之裝置，其中，設置有控制系統，其具有可儲存熟化輪廓之記憶體。
TW105111501A 2015-04-15 2016-04-13 用來熟化至少一部份施加於基板之光阻劑的方法與裝置 TWI713515B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2014642A NL2014642B1 (en) 2015-04-15 2015-04-15 Method and device for curing at least in part a photoresist applied to a substrate.
NL2014642 2015-04-15

Publications (2)

Publication Number Publication Date
TW201642051A TW201642051A (zh) 2016-12-01
TWI713515B true TWI713515B (zh) 2020-12-21

Family

ID=53783825

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105111501A TWI713515B (zh) 2015-04-15 2016-04-13 用來熟化至少一部份施加於基板之光阻劑的方法與裝置

Country Status (9)

Country Link
US (1) US9960061B2 (zh)
JP (1) JP6739216B2 (zh)
KR (1) KR20160123247A (zh)
CN (1) CN106054540A (zh)
AT (1) AT517039A3 (zh)
CH (1) CH711013B1 (zh)
DE (1) DE102016106653A1 (zh)
NL (1) NL2014642B1 (zh)
TW (1) TWI713515B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108213016B (zh) * 2017-12-28 2020-07-24 德淮半导体有限公司 晶圆清洗装置及晶圆清洗方法
CN110090788B (zh) * 2019-05-15 2024-04-16 广东瑞谷光网通信股份有限公司 一种用于光学器件固胶的恒温旋转加热台结构
CN110475393B (zh) * 2019-08-12 2021-12-07 百隆智能家居有限公司 一种多角度旋转烤灯
KR102226849B1 (ko) 2019-10-21 2021-03-12 순천향대학교 산학협력단 편마비 환자를 위한 보행 보조기
KR20210099891A (ko) 2020-02-05 2021-08-13 주식회사 아이티바이오 편마비 환자를 위한 보행 보조기

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997005527A1 (en) * 1995-07-27 1997-02-13 Semiconductor Systems, Inc. Method and apparatus for curing photoresist
WO2005034211A2 (en) * 2003-09-30 2005-04-14 Tokyo Electron Limited Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process
US20090286407A1 (en) * 2008-05-15 2009-11-19 Macronix International Co., Ltd. Baking apparatus, baking mehod and method of reducing gap width
US9449808B2 (en) * 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289126A (ja) * 1990-04-05 1991-12-19 Nec Corp レジスト膜形成装置
US6381873B1 (en) * 2000-08-04 2002-05-07 Vladimir Peremychtchev Method for drying a polymer coating on a substrate
US20070295276A1 (en) * 2004-12-22 2007-12-27 Sokudo Co., Ltd. Bake plate having engageable thermal mass
KR100626395B1 (ko) * 2005-06-29 2006-09-20 삼성전자주식회사 노광 후 베이크 장치 및 노광 후 베이크 방법, 그리고 상기장치를 가지는 포토 리소그래피 시스템
US20080099181A1 (en) * 2006-10-31 2008-05-01 Sokudo Co., Ltd. Method to cool a bake plate using an actively chilled transfer shuttle
US20090001071A1 (en) * 2007-06-28 2009-01-01 Sokudo Co., Ltd Method and System for Cooling a Bake Plate in a Track Lithography Tool
JP2010141103A (ja) * 2008-12-11 2010-06-24 Toshiba Corp 半導体装置の製造方法および熱処理装置
JP2011040544A (ja) * 2009-08-10 2011-02-24 Toshiba Corp 熱処理装置及び半導体装置の製造方法
WO2011136139A1 (ja) * 2010-04-30 2011-11-03 コニカミノルタオプト株式会社 ウェハレンズ部材の製造方法、撮像レンズの製造方法、撮像モジュールの製造方法及び撮像モジュールを搭載した電子機器の製造方法
JP5875759B2 (ja) * 2010-10-14 2016-03-02 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 熱処理方法および熱処理装置
US10204803B2 (en) * 2013-09-17 2019-02-12 Deca Technologies Inc. Two step method of rapid curing a semiconductor polymer layer
CN104952704B (zh) * 2014-03-25 2017-12-01 中芯国际集成电路制造(上海)有限公司 涂层的形成方法
US9536759B2 (en) * 2015-05-29 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd Baking apparatus and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766824A (en) * 1993-07-16 1998-06-16 Semiconductor Systems, Inc. Method and apparatus for curing photoresist
WO1997005527A1 (en) * 1995-07-27 1997-02-13 Semiconductor Systems, Inc. Method and apparatus for curing photoresist
WO2005034211A2 (en) * 2003-09-30 2005-04-14 Tokyo Electron Limited Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process
US20090286407A1 (en) * 2008-05-15 2009-11-19 Macronix International Co., Ltd. Baking apparatus, baking mehod and method of reducing gap width
US9449808B2 (en) * 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications

Also Published As

Publication number Publication date
JP6739216B2 (ja) 2020-08-12
NL2014642B1 (en) 2016-12-20
AT517039A3 (de) 2021-05-15
JP2017011258A (ja) 2017-01-12
AT517039A2 (de) 2016-10-15
NL2014642A (en) 2016-10-19
US20160306280A1 (en) 2016-10-20
CH711013B1 (de) 2020-03-13
US9960061B2 (en) 2018-05-01
CH711013A2 (de) 2016-10-31
CN106054540A (zh) 2016-10-26
TW201642051A (zh) 2016-12-01
KR20160123247A (ko) 2016-10-25
DE102016106653A1 (de) 2016-10-20

Similar Documents

Publication Publication Date Title
TWI713515B (zh) 用來熟化至少一部份施加於基板之光阻劑的方法與裝置
US10048664B2 (en) Coating method, computer storage medium and coating apparatus
JP4948587B2 (ja) フォトレジスト塗布現像装置、基板搬送方法、インターフェイス装置
US10256122B2 (en) Substrate heating method
KR101176882B1 (ko) 현상 장치, 현상 방법 및 기억 매체
US7938587B2 (en) Substrate processing method, computer storage medium and substrate processing system
US20100112209A1 (en) Coating treatment method, coating treatment apparatus, and computer-readable storage medium
US7479190B2 (en) Coating treatment apparatus and coating treatment method
US7809460B2 (en) Coating and developing apparatus, coating and developing method and storage medium in which a computer-readable program is stored
US11065639B2 (en) Coating treatment method, computer storage medium and coating treatment apparatus
TWI625788B (zh) 基板處理方法、記憶媒體及加熱裝置
JP2009194239A (ja) 疎水化処理方法、疎水化処理装置、塗布、現像装置及び記憶媒体
US7757626B2 (en) Substrate processing apparatus and substrate processing method
TW201207895A (en) Developing apparatus, developing method and storage medium
US20070166030A1 (en) Semiconductor device fabrication equipment and method of using the same
WO2007094229A1 (ja) 基板の処理方法及びコンピュータ読み取り可能な記憶媒体
WO2021090721A1 (ja) 基板処理装置、基板処理方法、及び記憶媒体
JP2016525275A (ja) 基材表面の処理方法および装置
JPH04262552A (ja) 処理装置、レジスト塗布装置及びレジスト塗布方法
JP2003209036A (ja) レジスト塗布装置
JP2002170758A (ja) 上面ベークアンドクーリング装置
JP2010109102A (ja) 半導体装置の製造方法及び基板処理装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees