TWI713090B - 具備ＳｉＣ層之化合物半導體基板 - Google Patents

具備ＳｉＣ層之化合物半導體基板 Download PDF

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TWI713090B
TWI713090B TW105133898A TW105133898A TWI713090B TW I713090 B TWI713090 B TW I713090B TW 105133898 A TW105133898 A TW 105133898A TW 105133898 A TW105133898 A TW 105133898A TW I713090 B TWI713090 B TW I713090B
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nitride semiconductor
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生川満久
深澤暁
鈴木悠宜
川村啓介
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日商愛沃特股份有限公司
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Abstract

本發明係一種具備SiC層之化合物半導體基板，可提供具有所期望品質之化合物半導體基板。
化合物半導體基板係具備：SiC層(碳化矽)，和加以形成於SiC層上之AlN(氮化鋁)緩衝層，和加以形成於AlN緩衝層上，含有Al(鋁)之氮化物半導體層，和加以形成於Al氮化物半導體層上之第1GaN(氮化鎵)層，和接觸於第1GaN層而加以形成於第1GaN層上之第1AlN中間層，和接觸於第1AlN中間層而加以形成於第1AlN中間層上之第2GaN層。

Description

具備SiC層之化合物半導體基板
本發明係有關化合物半導體基板，對於更特定而言，係有關具備SiC(碳化矽)層之化合物半導體基板。
GaN(氮化鎵)係知道作為比較於Si(矽)而能隙為大，絕緣破壞電場強度為高之寬能隙半導體材料。GaN係因與其他的寬能隙半導體材料作比較，亦具有高耐絕緣破壞性之故，期待有對於新世代之低損失的功率裝置之適用。
對於使用GaN之半導體裝置的開端基板(基底基板)，使用Si基板之情況，因GaN與Si之間的晶格常數及熱膨脹係數之大的差引起，而容易引起對於基板產生彎曲，以及對於GaN層內產生斷裂之現象。
作為基板的彎曲或對於GaN層內之斷裂的產生對策，例如，對於下述專利文獻1等，係加以揭示有具備：Si基板，和加以形成於Si基板上之3C-SiC層，和加以交互形成之複數的AlN層(氮化鋁)及GaN層之半導 體基板。
另外，對於下述專利文獻2係加以揭示有具備：Si基板，和加以形成於Si基板上之基底層，和加以形成於基底層上之層積中間層，和加以形成於層積中間層之機能層的氮化物半導體元件。基底層係包含AlN緩衝層，和GaN基底層。層積中間層係包含：AlN中間層，和AlGaN(氮化鋁鎵)中間層，和GaN中間層。AlGaN中間層係包含接觸於AlN中間層之第1階段層。在第1階段層之Al組成比係在自AlN中間層朝向第1階段層之方向中，階段狀地減少。
對於下述專利文獻3係具備：Si或SiC等所成之基板，和順序形成於基板上之AlN緩衝層，和包含含有Al(鋁)及GaN之氮化物半導體之基底層，GaN等所成之第1高Ga(鎵)組成層，AlN等所成之高Al組成層，含有氮化物半導體之低Al組成層，SiN(氮化矽)，MgN(氮化鎂)、或BN(氮化硼)等所成之中間部，及GaN等所成之第2高Ga組成層。
先前技術文獻 專利文獻
專利文獻1：日本特開2013-179121號公報
專利文獻2：日本特開2013-70065號公報
專利文獻3：日本特開2014-63903號公報
在專利文獻1的技術中，可某種程度抑制基板的彎曲或對於GaN層內之斷裂的產生，而加以得到比較良好之結晶品質之GaN層。另一方面，對於專利文獻1之技術係對於GaN層的膜厚化有界限，而對於耐電壓，同樣地亦有界限。此係當將GaN層作為厚膜化時，因對於基板產生有彎曲，以及對於GaN層內產生有斷裂之故。當考慮作為GaN之功率裝置之用途時，提升使用GaN之半導體裝置的耐電壓者係為重要。
在專利文獻2的技術中，可某種程度抑制對於GaN層內之斷裂的產生，而加以得到比較良好之結晶品質之GaN層。另一方面，在專利文獻2之技術中，係有容易產生基板的彎曲之課題。
在專利文獻3之技術中，加以得到比較良好之結晶品質之GaN層。另一方面，在專利文獻3之技術中，係有容易產生基板的彎曲或對於GaN層內之斷裂之課題。
彙整時，對於形成GaN層於基板上之情況，係有對於基板產生有彎曲的課題，對於GaN層產生有斷裂之課題，結晶性產生降低之課題，及耐電壓為低之課題，而無法得到在以往完全解決此等課題之品質的化合物半導體基板者。
本發明係為了解決上述課題之構成，其目的為提供：具有所期望的品質之化合物半導體基板者。
依照本發明之一局面之化合物半導體基板係具備：SiC層，和加以形成於SiC層上之AlN緩衝層，和加以形成於AlN緩衝層上，含有Al之氮化物半導體層，和加以形成於氮化物半導體層上之第1GaN層，和接觸於第1GaN層而加以形成於第1GaN層上之第1AlN中間層，和接觸於第1AlN中間層而加以形成於第1AlN中間層上之第2GaN層。
在上述化合物半導體基板中，理想係在氮化物半導體層內部之Al的組成比係隨著自下部朝向上部之方向而減少。
在上述化合物半導體基板中，理想係氮化物半導體層係包含：含有Al及Ga之第1氮化物半導體層，和接觸於第1氮化物半導體層而加以形成於第1氮化物半導體層上之第2AlN層，和接觸於第2AlN層而加以形成於第2AlN層上，含有Al及Ga之第2氮化物半導體層；在第1及第2氮化物半導體層之中至少任一方的層內部之Al的組成比係隨著自下部朝向上部之方向而減少。
在上述化合物半導體基板中，理想係第2GaN層係含有壓縮偏差。
在上述化合物半導體基板中，理想係氮化物 半導體層係具有900nm以上2μm以下之厚度。
在上述化合物半導體基板中，理想係第1GaN層係具有550nm以上1000nm以下之厚度。
在上述化合物半導體基板中，理想係第1AlN中間層係具有5nm以上9nm以下之厚度。
如根據本發明，可提供具有所期望品質之化合物半導體基板。
1‧‧‧Si(矽)基板
2‧‧‧SiC(碳化矽)層
3‧‧‧AlN(氮化鋁)緩衝層
4，10‧‧‧Al(鋁)氮化物半導體層
4a，4b‧‧‧AlGaN(氮化鋁鎵)層
5，7‧‧‧GaN(氮化鎵)層
6，44‧‧‧AlN中間層
41‧‧‧Al0.75Ga0.25N層
42‧‧‧Al0.5Ga0.5N層
43‧‧‧Al0.25Ga0.75N層
CS‧‧‧化合物半導體基板
圖1係顯示本發明之一實施形態之半導體裝置之構成的剖面圖。
圖2係顯示本發明之一實施形態之Al氮化物半導體層4內部之Al組成比的分布圖。
圖3係顯示在化合物半導體基板CS製造時之基板的曲率半徑的逆數之時間變化的測定結果圖。
圖4係顯示本發明之第1變形例之Al氮化物半導體層4內部之Al組成比的分布圖。
圖5係顯示本發明之第2變形例之Al氮化物半導體層4內部之Al組成比的分布圖。
[第1實施形態1
圖1係顯示本發明之一實施形態之半導體裝置之構成的剖面圖。
參照圖1，在本實施形態之半導體裝置係包含HEMT(High Electron Mobility Transistor)。半導體裝置係具備：化合物半導體基板CS，和加以形成於化合物半導體基板CS上之Al氮化物半導體層10。
化合物半導體基板CS係具備：Si基板1，和SiC層2，和AlN緩衝層3(AlN緩衝層之一例)，和Al氮化物半導體層4(含有Al之氮化物半導體層之一例)，和GaN層5(第1GaN層之一例)，和AlN中間層6(第1AlN中間層之一例)，和GaN層7(第2GaN層之一例)。
Si基板1係例如由p+型之Si所成。對於Si基板1表面係露出有(111)面。然而，Si基板1係具有n型之導電型亦可，而亦可為半絕緣性。對於Si基板1表面係露出有(100)面或(110)面。Si基板1係例如具有6英吋直徑，具有900μm之厚度。
SiC層2係接觸於Si基板1，而加以形成於Si基板1上。SiC層2係例如，由3C-SiC、4H-SiC、或6H-SiC等而成。特別是，SiC層2則為加以磊晶成長於Si基板1之情況，一般而言，SiC層2係由3C-SiC而成。
SiC層2係於由碳化Si基板1之表面者而加以 得到之SiC所成之基底層上，使用MBE(Molecular Beam Epitaxy)法、CVD(Chemical Vapor Deposition)法、或LPE(Liquid Phase Epitaxy)法等，經由使SiC加以同質磊晶成長之時而加以形成亦可。SiC層2係僅經由碳化Si基板1的表面而加以形成亦可。更且，SiC層2係於Si基板1表面，經由(或夾持緩衝層)使其異質磊晶成長之時而加以形成。SiC層2係例如，加以摻雜N(氮)等，具有n型之導電形。SiC層2係例如，具有0.1μm以上3.5μm以下之厚度。然而，SiC層2係具有p型之導電型亦可，而亦可為半絕緣性。
AlN緩衝層3係接觸於SiC層2，而加以形成於SiC層2上。AlN緩衝層3係達成作為緩和SiC層2與Al氮化物半導體層4之晶格常數的差之緩衝層的機能。AlN緩衝層3係例如，使用MOCVD(Metal Organic Chemical Vapor Deposition)法而加以形成。AlN緩衝層3之成長溫度係例如，加以作為1000℃以上1300℃以下。此時，作為Al源氣體係例如，加以使用TMA(Tri Methyl Aluminium)，或TEA(Tri Ethyl Aluminium)等。作為N源氣體係例如，使用NH3(氨氣)。AlN緩衝層3係例如，具有100nm以上1000nm以下之厚度。
Al氮化物半導體層4係接觸於AlN緩衝層3，而加以形成於AlN緩衝層3上。Al氮化物半導體層4係由含有Al之氮化物半導體而成，例如由AlxGa1-xN(0<x≦1)所表示之材料所成。另外，Al氮化物半導體 層4係亦可由AlxInyGa1-x-yN(0<x≦1、0≦y<1)所表示之材料而成。Al氮化物半導體層4係達成作為緩和AlN緩衝層3與GaN層5之晶格常數的差之緩衝層的機能。Al氮化物半導體層4係例如，具有500nm以上2μm以下、理想係900nm以上2μm以下之厚度。Al氮化物半導體層4係例如，使用MOCVD法而加以形成。
GaN層5係接觸於Al氮化物半導體層4，而加以形成於Al氮化物半導體層4上。GaN層5係未摻雜。GaN層5係例如，具有500nm以上1000nm以下之厚度，而理想係具有550nm以上1000nm以下(更理想為800nm以下)之厚度。然而，GaN層5係亦可為半絕緣性，而具有p型或n型之導電型。
GaN層5係例如，使用MOCVD法而加以形成。此時，作為Ga源氣體係例如，加以使用TMG(Tri Methyl Gallium)，或TEG(Tri Ethyl Gallium)等。作為N源氣體係例如，使用NH3等。
AlN中間層6係接觸於GaN層5，而加以形成於GaN層5上。AlN中間層6係達成使壓縮偏差產生於GaN層7之機能。AlN中間層6係例如，具有5nm以上15nm以下之厚度，而理想係具有5nm以上9nm以下之厚度，更理想係具有7nm以上9nm以下之厚度。AlN中間層6係例如，使用MOCVD法而加以形成。AlN中間層6係以較GaN層5之成長溫度為低之成長溫度加以形成。
GaN層7係接觸於AlN中間層6，而加以形成 於AlN中間層6上。GaN層7係未摻雜，而為半絕緣性。GaN層7係成為HEMT之電子走行層。GaN層7係經由來自基底層之AlN中間層6的影響而含有壓縮偏差。GaN層7係理想具有1500nm以上3000nm以下之厚度，而更理想為具有1500nm以上2500nm以下之厚度。GaN層7係以與GaN層5同樣的方法加以形成。然而，GaN層7係具有p型或n型之導電型亦可，而於GaN層7之至少一部分，加以摻雜C亦可。
Al氮化物半導體層10係接觸於GaN層7，而加以形成於GaN層7上。Al氮化物半導體層10係由含有Al之氮化物半導體而成，例如由AlxGa1-xN(0<x≦1)所表示之材料所成。另外，Al氮化物半導體層10係亦可由AlxInyGa1-x-yN(0<x≦1、0≦y<1)所表示之材料而成。Al氮化物半導體層10係成為HEMT之障壁層。Al氮化物半導體層10例如，具有10nm以上50nm以下之厚度。
圖2係顯示本發明之一實施形態之Al氮化物半導體層4內部之Al組成比的分布圖。
參照圖2，在Al氮化物半導體層4內部之Al組成比係隨著自下部朝向上部而減少。Al氮化物半導體層4係含有：Al0.75Ga0.25N層41(Al之組成比為0.75之AlGaN層)，和Al0.5Ga0.5N層42(Al之組成比為0.5之AlGaN層)，和Al0.25Ga0.75N層43(Al之組成比為0.25之AlGaN層)。Al0.75Ga0.25N層41係接觸於AlN緩衝層3，而加以形成於AlN緩衝層3上。Al0.5Ga0.5N層42係接 觸於Al0.75Ga0.25N層41，而加以形成於Al0.75Ga0.25N層41上。Al0.25Ga0.75N層43係接觸於Al0.5Ga0.5N層42，而加以形成於Al0.5Ga0.5N層42上。然而，上述之Al組成比係為一例，Al組成比則如隨著自下部朝向上部而減少時，亦可作為其他的組成。
如根據本實施形態，經由形成AlN中間層6於GaN層5與GaN層7之間之時，可抑制Si基板1彎曲的產生，而可抑止對於GaN層7之斷裂的產生。對與此等，於以下加以說明。
構成AlN中間層6之AlN係對於構成GaN層5之GaN的結晶而言，以不整合之狀態(產生滑動之狀態)，磊晶成長於GaN層5上。另一方面，構成GaN層7之GaN係受到構成基底之AlN中間層6的AlN之結晶的影響。即，構成GaN層7之GaN係呈繼承構成AlN中間層6之AlN的結晶構造地，磊晶成長於AlN中間層6上。GaN之晶格常數係較AlN之晶格常數為大之故，構成GaN層7之GaN之圖1中橫方向的晶格常數係成為較一般的(未含有壓縮偏差)GaN之晶格常數為小。換言之，對於GaN層7之內部係產生有壓縮偏差。
對於GaN層7形成後的降溫時，係因GaN與Si之熱膨脹係數的差引起，GaN層7係自AlN中間層6受到應力。此應力係成為Si基板1彎曲之產生及對於GaN層7之斷裂的產生原因。但此應力係經由在GaN層7形成時，加以導入至GaN層7內部之壓縮偏差而加以緩 和。其結果，可抑制Si基板1彎曲之產生，而可抑制對於GaN層7之斷裂的產生。
另外，如根據本實施形態，化合物半導體基板CS則因含有Al氮化物半導體層4於AlN緩衝層3與GaN層5之間之故，可緩和Si之晶格常數與GaN之晶格常數的差。Al氮化物半導體層4之晶格常數係因具有Si之晶格常數與GaN之晶格常數之間的值之故。其結果，可提升GaN層5之結晶品質。另外，可抑制Si基板1彎曲之產生，而可抑制對於GaN層5之斷裂的產生。
另外，如根據本實施形態，如上述，因可加以抑制Si基板1彎曲之產生及對於GaN層5及7之斷裂的產生之故，可將各GaN層5及7作為厚膜化。另外，化合物半導體基板CS係含有具有較GaN之絕緣破壞電壓為高之絕緣破壞電壓的Al氮化物半導體層4。其結果，可提升化合物半導體基板之縱方向的耐電壓。
更且，化合物半導體基板CS係作為GaN層5及7之基底層而含有SiC層2。SiC之晶格常數係因與Si之晶格常數比較而接近於與GaN之晶格常數之故，經由加以形成GaN層5及7於SiC層2上之時，可提升GaN層5及7之結晶品質。
如上述如根據本實施形態，由區別AlN中間層6、Al氮化物半導體層4、及SiC層2之各機能者，可使各抑制Si基板1彎曲之產生及對於GaN層5及7之斷裂的產生之效果，提升化合物半導體基板之耐電壓之效 果，及提升GaN層5及7之結晶品質的效果增大。特別是在本實施形態中，由將SiC層2作為基底層者，可改善GaN層5及7之結晶品質的點之貢獻為大。
如根據本實施形態，有著SiC層2，經由GaN層5之結晶品質所提升之時，可薄化AlN中間層6之厚度，而可更有效率地抑制彎曲的產生及斷裂之產生。另外，有著SiC層2，經由GaN層5之結晶品質所提升之時，可加厚GaN層5及7之故，而可更改善耐電壓。
另一方面，在先前文獻2及3中，於AlN層與GaN層之間，加以形成有AlGaN層。在此構造中，經由AlGaN層而可緩和AlN之晶格常數與GaN之晶格常數的差，而可提升GaN層之結晶品質。另外，構成GaN層之GaN係呈繼承構成AlGaN層之AlGaN的結晶構造地，磊晶成長於AlGaN層上。但，AlGaN之晶格常數係因與AlN層之晶格常數做比較而接近於GaN之晶格常數之故，產生於GaN層內部之壓縮偏差係與將AlN層作為基底層而形成GaN層之情況做比較為小。其結果，抑制Si基板彎曲的產生之效果為小，而抑制對於GaN層之斷裂產生之效果為小。另外，無法厚膜化GaN層，而無法提升化合物半導體基板之縱方向的耐電壓。
也就是，在此構造中，以1個的層(AlGaN層)而加以提供改善結晶品質之效果，和抑制Si基板彎曲的產生效果，和對於GaN層之斷裂的產生效果之故，各自的效果則變小。
本申請發明者們係欲確認化合物半導體基板CS含有AlN中間層6之效果而進行以下的實驗。
圖3係顯示在化合物半導體基板CS製造時之基板的曲率半徑的逆數之時間變化的測定結果圖。然而，圖3之曲率半徑的逆數係將GaN層7表面為凹面之狀態作為正，而將為凸面之狀態作為負。在圖3中，基板之曲率半徑的逆數則成為越接近於零，越加以降低基板之彎曲。
參照圖3，本申請發明者們係作為本發明例，依序形成構成化合物半導體基板CS之各層於基板上，測定基板之曲率半徑的逆數之時間變化。另外，本申請發明者們係作為比較例，將構成化合物半導體基板CS之各層之中除了AlN中間層6之各層，依序形成於基板上，測定基板之曲率半徑的逆數之時間變化。
其結果，在本發明例中，形成AlN中間層6之時刻的時刻PO1之後中，本發明例之基板的彎曲則與比較例的基板之彎曲做比較，加大地增加於負方向。從此結果，了解到經由AlN中間層6之存在而產生也壓縮偏差於GaN層7之內部。
另外，在本發明例之最終的基板之曲率半徑的逆數(在時刻PO3之曲率半径的逆數)係比較於比較例之最終的基板之曲率半徑的逆數(在時刻PO2之曲率半径的逆數)而明確地變小。從此結果，了解到經由AlN中間層6之存在而加以抑制基板彎曲的產生。
[變形例]
圖4係顯示本發明之第1變形例之Al氮化物半導體層4內部之Al組成比的分布圖。
參照圖4，在本變形例之Al氮化物半導體層4係含有：AlGaN層4a(含有Al及Ga之第1氮化物半導體層之一例)，和AlN中間層44(第2AlN層之一例)，和AlGaN層4b(含有Al及Ga之第2氮化物半導體層之一例)。
AlGaN層4a係接觸於AlN緩衝層3，而加以形成於AlN緩衝層3上。AlGaN層4a係由Al0.75Ga0.25N層41(Al之組成比為0.75之AlGaN層)而成。在AlGaN層4a內部之Al之組成比係為一定。
AlN中間層44係加以形成於AlGaN層4a上。AlN中間層44之下面係接觸於AlGaN層4a之上面，而AlN中間層44之上面係接觸於AlGaN層4b之下面。
AlGaN層4b係加以形成於AlN中間層44上。在AlGaN層4b內部之Al的組成比係隨著自下部朝向上部之方向而減少。AlGaN層4b係經由Al0.5Ga0.5N層42(Al之組成比為0.5之AlGaN層)，和接觸於Al0.5Ga0.5N層42而加以形成於Al0.5Ga0.5N層42上之Al0.25Ga0.75N層43(Al之組成比為0.25之AlGaN層)而加以構成。
圖5係顯示本發明之第2變形例之Al氮化物 半導體層4內部之Al組成比的分布圖。
參照圖5，在本變形例之Al氮化物半導體層4係含有：AlGaN層4a(含有Al及Ga之第1氮化物半導體層之一例)，和AlN中間層44(第2AlN層之一例)，和AlGaN層4b(含有Al及Ga之第2氮化物半導體層之一例)。
AlGaN層4a係接觸於AlN緩衝層3，而加以形成於AlN緩衝層3上。在AlGaN層4a內部之Al的組成比係隨著自下部朝向上部之方向而減少。AlGaN層4a係經由Al0.75Ga0.25N層41(Al之組成比為0.75之AlGaN層)，和接觸於Al0.75Ga0.25N層41而加以形成於Al0.75Ga0.25N層41上之Al0.5Ga0.5N層42(Al之組成比為0.5之AlGaN層)而加以構成。
AlN中間層44係加以形成於AlGaN層4a上。AlN中間層44之下面係接觸於AlGaN層4a之上面，而AlN中間層44之上面係接觸於AlGaN層4b之下面。
AlGaN層4b係加以形成於AlN中間層44上。AlGaN層4b係由Al0.25Ga0.75N層43(Al之組成比為0.25之AlGaN層)而成。在AlGaN層4b內部之Al之組成比係為一定。
然而，在第1及第2變形例之各化合物半導體基板之上述以外的構成係與上述實施形態情況之構成同樣之故，不重覆其說明。
AlN中間層44係達成使壓縮偏差產生於 AlGaN層4b之機能。如第1及第2變形例，由設置AlN中間層44者，更可抑制彎曲或斷裂。
[其他]
加以形成於化合物半導體基板之裝置係為如任意之裝置即可，而HEMT之其他，亦可為電晶體，LED(Light Emitting Diode)、閘流體，或半導體雷射等。化合物半導體基板係適用於電子裝置之用途。
上述之實施形態係認為例示在所有的點，並非限制性的構成。本發明之範圍係並非上述之說明，而經由申請專利範圍所示，特意包含有與申請專利範圍均等意味及在範圍內之所有的變更者。
1‧‧‧Si(矽)基板
2‧‧‧SiC(碳化矽)層
3‧‧‧AlN(氮化鋁)緩衝層
4，10‧‧‧Al(鋁)氮化物半導體層
5，7‧‧‧GaN(氮化鎵)層
6‧‧‧AlN中間層
41‧‧‧Al0.75Ga0.25N層
42‧‧‧Al0.5Ga0.5N層
43‧‧‧Al0.25Ga0.75N層
CS‧‧‧化合物半導體基板

Claims (5)

  1. 一種化合物半導體基板，其特徵為具備：SiC層，和加以形成於前述SiC層上之AlN緩衝層，和加以形成於前述AlN緩衝層上，含有Al之氮化物半導體層，和加以形成於前述氮化物半導體層上之第1GaN層，和接觸於前述第1GaN層而加以形成於前述第1GaN層上之第1AlN中間層，和接觸於前述第1AlN中間層而加以形成於前述第1AlN中間層上之第2GaN層；前述氮化物半導體層係包含：含有Al及Ga之第1氮化物半導體層，和接觸於前述第1氮化物半導體層，形成於前述第1氮化物半導體層上之第2AlN層，和接觸於前述第2AlN層，形成於前述第2AlN層上，含有Al及Ga之第2氮化物半導體層；在前述第1及前述第2氮化物半導體層之中至少任一方的層內部之Al的組成比係隨著自下部朝向上部之方向而減少。
  2. 如申請專利範圍第1項記載之化合物半導體基板，其中，前述第2GaN層係含有壓縮偏差。
  3. 如申請專利範圍第1項記載之化合物半導體基板，其中，前述氮化物半導體層係具有900nm以上2μm以下之厚度。
  4. 如申請專利範圍第1項記載之化合物半導體基板，其中，前述第1GaN層係具有550nm以上1000nm以下之厚度。
  5. 如申請專利範圍第1項記載之化合物半導體基板，其中，前述第1AlN中間層係具有5nm以上9nm以下之厚度。
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