TWI710034B - Semiconductor manufacturing device and semiconductor device manufacturing method - Google Patents

Semiconductor manufacturing device and semiconductor device manufacturing method Download PDF

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TWI710034B
TWI710034B TW107115690A TW107115690A TWI710034B TW I710034 B TWI710034 B TW I710034B TW 107115690 A TW107115690 A TW 107115690A TW 107115690 A TW107115690 A TW 107115690A TW I710034 B TWI710034 B TW I710034B
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die
chuck
aforementioned
magnet
head
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TW107115690A
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Chinese (zh)
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TW201903913A (en
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高野𨺓一
牧浩
五十嵐伸之
田中裕也
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日商捷進科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes

Abstract

本發明的課題是若將磁石內藏於夾頭夾具，則有磁力洩漏至外部而影響感測器等周邊磁氣電路的情形。 　　其解決手段，半導體製造裝置係具備： 　　夾頭夾具，其係以磁石來保持夾頭；及 　　頭，其係於前端具備該夾頭夾具，以前述夾頭來吸附拾取晶粒。 　　前述夾頭夾具係具備： 　　遮蔽部，其係被設於前述磁石的上方，遮蔽前述磁石的磁場；及 　　通過部，其係被設於前述磁石的下方，通過前述磁石的磁場。The subject of the present invention is that if a magnet is embedded in a chuck clamp, the magnetic force may leak to the outside and affect peripheral magnetic circuits such as sensors.　　 Its solution means, a semiconductor manufacturing device is equipped with: a chuck clamp, which uses a magnet to hold the chuck; and a 　 head, which is equipped with the chuck clamp at the tip, and uses the chuck to pick up the die.　　The chuck clamp is provided with: a 　　 shielding part which is provided above the magnet to shield the magnetic field of the magnet; and a 　　 pass part which is provided below the magnet and passes the magnetic field of the magnet.

Description

半導體製造裝置及半導體裝置的製造方法Semiconductor manufacturing device and semiconductor device manufacturing method

本案是有關半導體製造裝置，例如，可適用於將磁石內藏於夾頭夾具的黏晶機(die bonder)。This case is related to semiconductor manufacturing equipment, for example, it can be applied to a die bonder that embeds a magnet in a chuck fixture.

在半導體裝置的製造工程的一部分，將半導體晶片(以下簡稱晶粒)搭載於配線基板或導線架等(以下簡稱基板)而組合封裝的工程的一部分，有從半導體晶圓(以下簡稱晶圓)分割晶粒的工程，及將分割後的晶粒搭載於基板上的接合工程。被使用於接合工程的半導體製造裝置為黏晶機等的黏晶裝置。 　　接合工程是從切割膠帶來一個一個剝離從晶圓分割的晶粒，使用被稱為夾頭的吸附治具來接合於基板上。 　　有在保持夾頭的夾頭夾具內藏磁石來固定夾頭者(例如日本特開2014-56978號公報(專利文獻1))。 [先前技術文獻] [專利文獻]In a part of the manufacturing process of a semiconductor device, a semiconductor wafer (hereinafter referred to as a die) is mounted on a wiring board or a lead frame (hereinafter referred to as a substrate) and a part of a process of assembly and packaging is from a semiconductor wafer (hereinafter referred to as a wafer) The process of dividing the die and the bonding process of mounting the divided die on the substrate. The semiconductor manufacturing equipment used in the bonding process is a die bonder such as a die bonder.　　The bonding process is to peel off the dicing from the wafer one by one from the dicing tape, and use a suction jig called a chuck to bond it to the substrate. "There is a chuck holding a magnet in a chuck holder to fix the chuck (for example, JP 2014-56978 A (Patent Document 1)). [Prior Art Document] [Patent Document]

[專利文獻1] 日本特開2014-56978號公報[Patent Document 1] JP 2014-56978 A

[發明所欲解決的課題][The problem to be solved by the invention]

若如專利文獻1般在夾頭夾具內藏磁石，則有磁力洩漏至外部而影響感測器等周邊磁氣電路的情形。 　　本案的課題是在於提供一種具備減低磁力洩漏的夾頭夾具之半導體製造裝置。 　　其他的課題及新穎的特徵是可由本說明書的記述及附圖明確得知。 [用以解決課題的手段]If a magnet is contained in the chuck holder as in Patent Document 1, the magnetic force may leak to the outside and affect the peripheral magnetic circuit such as the sensor.　　The subject of this case is to provide a semiconductor manufacturing device with a chuck fixture that reduces magnetic leakage.　　Other issues and novel features can be clearly understood from the description of this specification and the drawings. [Means to solve the problem]

本案之中代表者的概要簡單說明如下。 　　亦即，半導體製造裝置係具備： 　　夾頭夾具，其係以磁石來保持夾頭；及 　　頭，其係於前端具備該夾頭夾具，以前述夾頭來吸附拾取晶粒。 　　前述夾頭夾具係具備： 　　遮蔽部，其係被設於前述磁石的上方，遮蔽前述磁石的磁場；及 　　通過部，其係被設於前述磁石的下方，通過前述磁石的磁場。 [發明的效果]A brief description of the representatives in this case is as follows.　　 That is, the semiconductor manufacturing device is equipped with: a chuck clamp, which uses a magnet to hold the chuck; and a 　　 head, which is equipped with the chuck clamp at the front end, and uses the chuck to suck and pick up the die.　　The chuck clamp is provided with: a 　　 shielding part which is provided above the magnet to shield the magnetic field of the magnet; and a 　　 pass part which is provided below the magnet and passes the magnetic field of the magnet. [Effects of the invention]

若根據上述半導體製造裝置，則可減低磁力洩漏。According to the semiconductor manufacturing apparatus described above, magnetic leakage can be reduced.

以下，利用圖面來說明有關實施例。但，在以下的說明中，對同一構成要素是附上同一符號，省略重複的說明。另外，為了使說明更明確，圖面相較於實際的形態，有時模式性地表示有關各部的寬度、厚度、形狀等，但終究是其一例，不是限定本發明的解釋者。 [實施例]Hereinafter, the relevant embodiments will be explained using figures. However, in the following description, the same components are given the same reference numerals, and overlapping descriptions are omitted. In addition, in order to make the description clearer, the drawing may schematically show the width, thickness, shape, etc. of each part compared to the actual form, but it is an example after all, and it does not limit the interpreter of the present invention. [Example]

圖1是表示實施例的黏晶機的概略的俯視圖。圖2是說明在圖1中從箭號A方向看時，拾取頭及接合頭的動作的圖。Fig. 1 is a schematic plan view showing the die bonder of the embodiment. Fig. 2 is a diagram illustrating the actions of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1.

黏晶機10是大致區別具有：供給安裝於基板S的晶粒D的晶粒供給部1、拾取部2、中間平台部3、接合部4、搬送部5、基板供給部6、基板搬出部7及監視控制各部的動作的控制裝置8，該基板S是印刷一個或複數個的成為最終1封裝的製品區域(以下稱為封裝區域P)。Y軸方向為黏晶機10的前後方向，X軸方向為左右方向。晶粒供給部1會被配置於黏晶機10的前面側，接合部4會被配置於後面側。The die bonder 10 basically has: a die supply unit 1, a pick-up unit 2, an intermediate stage unit 3, a bonding unit 4, a conveying unit 5, a substrate supply unit 6, and a substrate unloading unit for supplying the die D mounted on the substrate S 7 and a control device 8 that monitors and controls the operation of each part, and the substrate S is a product area (hereinafter referred to as a package area P) that is to be printed with one or a plurality of final packages. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply part 1 will be arranged on the front side of the die bonder 10, and the bonding part 4 will be arranged on the back side.

首先，晶粒供給部1是供給安裝於基板S的封裝區域P的晶粒D。晶粒供給部1是具有：保持晶圓11的晶圓保持台12，及從晶圓11頂起晶粒D之以虛線所示的頂起單元13。晶粒供給部1是藉由未圖示的驅動手段來移動於XY方向，使拾取的晶粒D移動至頂起單元13的位置。First, the die supply unit 1 supplies the die D mounted on the package area P of the substrate S. The die supply unit 1 includes a wafer holding table 12 that holds a wafer 11, and an ejection unit 13 shown by a dotted line that ejects the die D from the wafer 11. The die supply unit 1 is moved in the XY direction by a driving means not shown, and the picked-up die D is moved to the position of the lifting unit 13.

拾取部2是具有： 　　拾取晶粒D的拾取頭21； 　　使拾取頭21移動於Y方向的拾取頭的Y驅動部23；及 　　使夾頭22昇降、旋轉及X方向移動之未圖示的各驅動部。 　　拾取頭21是具有將被頂起的晶粒D吸附保持於前端的夾頭22(圖2也參照)，從晶粒供給部1拾取晶粒D，載置於中間平台31。拾取頭21是具有使夾頭22昇降、旋轉及X方向移動之未圖示的各驅動部。The pick-up unit 2 is provided with: 　　 pick-up head 21 for picking up die D; 　　 Y drive portion 23 of the pickup head that moves the pickup head 21 in the Y direction; and each of the not shown in the figures for lifting, rotating, and moving the chuck 22 in the X direction Drive section. The “pickup head 21” has a chuck 22 (also refer to FIG. 2) for sucking and holding the raised die D at the front end, and picks up the die D from the die supply unit 1 and places it on the intermediate platform 31. The pick-up head 21 has each drive part which is not shown in figure which raises and lowers, rotates the chuck 22, and moves the X direction.

中間平台部3是具有：暫時性地載置晶粒D的中間平台31，及用以識別中間平台31上的晶粒D的平台識別攝影機32。The intermediate platform 3 has an intermediate platform 31 on which the die D is temporarily placed, and a platform recognition camera 32 for recognizing the die D on the intermediate platform 31.

接合部4是從中間平台31拾取晶粒D，接合於被搬送來的基板S的封裝區域P上，或以層疊於已被接合於基板S的封裝區域P上的晶粒上的形式接合。 　　接合部4是具有： 　　具備與拾取頭21同樣將晶粒D吸附保持於前端的夾頭42(圖2也參照)的接合頭41； 　　使接合頭41移動於Y方向的Y驅動部43；及 　　攝取基板S的封裝區域P的位置識別標記(未圖示)，識別接合位置的基板識別攝影機44。 　　藉由如此的構成，接合頭41是根據平台識別攝影機32的攝像資料來修正拾取位置･姿勢，從中間平台31拾取晶粒D，根據基板識別攝影機44的攝像資料來將晶粒D接合於基板S的封裝區域P。The bonding part 4 picks up the die D from the intermediate stage 31 and joins it on the package area P of the substrate S to be transported, or is bonded in the form of being laminated on the die bonded on the package area P of the substrate S. The bonding portion 4 is a bonding head 41 having: 　　 having a chuck 42 (also referred to in FIG. 2) for sucking and holding the die D at the front end like the pickup head 21; 　　 a Y driving portion 43 that moves the bonding head 41 in the Y direction; and The board recognition camera 44 picks up the position recognition mark (not shown) of the packaging area P of the substrate S and recognizes the bonding position. With such a configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the platform recognition camera 32, picks up the die D from the intermediate platform 31, and bonds the die D to the substrate based on the imaging data of the substrate recognition camera 44 Package area P of S.

搬送部5是抓住基板S搬送的基板搬送爪51，及基板S移動的搬送道52。基板S是以沿著搬送道52而設之未圖示的滾珠螺桿來驅動被設在搬送道52的基板搬送爪51的螺帽，藉此移動。藉由如此的構成，基板S是從基板供給部6沿著搬送道52來移動至接合位置，接合後，移動至基板搬出部7，將基板S交給基板搬出部7。The conveying section 5 is a substrate conveying claw 51 that grasps the substrate S and conveys, and a conveyance path 52 that the substrate S moves. The substrate S is moved by a ball screw (not shown) provided along the conveyance path 52 to drive the nut of the substrate conveyance claw 51 provided on the conveyance path 52. With such a configuration, the substrate S is moved from the substrate supply unit 6 to the bonding position along the conveyance path 52, and after bonding, it moves to the substrate unloading section 7 and delivers the substrate S to the substrate unloading section 7.

控制裝置8是具備： 　　儲存監視控制黏晶機10的各部的動作的程式(軟體)的記憶體；及 　　實行被儲存於記憶體的程式的中央處理裝置(CPU)。The control device 8 is a memory that stores a program (software) that monitors and controls the operations of the various parts of the die bonder 10; and a central processing unit (CPU) that executes the programs stored in the memory.

其次，利用圖3及圖4來說明有關晶粒供給部1的構成。圖3是表示晶粒供給部的外觀立體圖的圖。圖4是表示晶粒供給部的主要部的概略剖面圖。Next, the structure of the crystal grain supply unit 1 will be described with reference to FIGS. 3 and 4. Fig. 3 is a diagram showing an external perspective view of a crystal grain supply part. 4 is a schematic cross-sectional view showing the main part of the crystal grain supply part.

晶粒供給部1是具備：移動於水平方向(XY方向)的晶圓保持台12，及移動於上下方向的頂起單元13。晶圓保持台12是具有：保持晶圓環14的擴張環15，及被保持於晶圓環14，將黏著有複數的晶粒D的切割膠帶16定位於水平的支撐環17。頂起單元13是被配置於支撐環17的內側。The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction), and a lift unit 13 that moves in the vertical direction. The wafer holding table 12 has an expansion ring 15 holding the wafer ring 14 and a dicing tape 16 held by the wafer ring 14 and positioning the dicing tape 16 to which a plurality of dies D are adhered on a horizontal support ring 17. The jacking unit 13 is arranged inside the support ring 17.

晶粒供給部1是在晶粒D的頂起時，使保持晶圓環14的擴張環15下降。其結果，被保持於晶圓環14的切割膠帶16會被拉伸，晶粒D的間隔會擴大，藉由頂起單元13從晶粒D下方頂起晶粒D，使晶粒D的拾取性提升。另外，隨著薄型化，將晶粒黏著於基板的黏著劑是由液狀成為薄膜狀，在晶圓11與切割膠帶16之間貼附被稱為晶粒黏結薄膜(die attach film)(DAF)18的薄膜狀的黏著材料。在具有晶粒黏結薄膜18的晶圓11中，切割是對於晶圓11與晶粒黏結薄膜18進行。因此，剝離工程是從切割膠帶16剝離晶圓11與晶粒黏結薄膜18。The die supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held on the wafer ring 14 will be stretched, and the spacing of the die D will be enlarged. The lifting unit 13 lifts the die D from below the die D, so that the die D is picked up. Sexual improvement. In addition, with the thinning, the adhesive used to adhere the die to the substrate has changed from a liquid state to a film state. A die attach film (DAF) is attached between the wafer 11 and the dicing tape 16. )18 film-like adhesive material. In the wafer 11 with the die bonding film 18, dicing is performed on the wafer 11 and the die bonding film 18. Therefore, the peeling process is to peel the wafer 11 and the die bonding film 18 from the dicing tape 16.

拾取頭21是具有吸附空氣流動於中心的吸附孔(未圖示)，具備：在前端側連接至夾頭夾具25的夾頭柄(未圖示)，及將夾頭夾具25固定於夾頭柄的夾頭固定部(未圖示)。接合頭41是與拾取頭21同樣。The pickup head 21 has a suction hole (not shown) through which suction air flows in the center, and is provided with a chuck handle (not shown) connected to the chuck clamp 25 on the front end side, and fixes the chuck clamp 25 to the chuck The chuck fixing part of the handle (not shown). The bonding head 41 is the same as the pickup head 21.

其次，利用圖5來說明有關夾頭夾具。圖5是用以說明實施例的夾頭夾具的圖，圖5(A)是夾頭夾具的側面圖，圖5(B)是夾頭夾具的分解立體圖。Next, use FIG. 5 to explain the chuck fixture. Fig. 5 is a diagram for explaining the chuck jig of the embodiment, Fig. 5(A) is a side view of the chuck jig, and Fig. 5(B) is an exploded perspective view of the chuck jig.

夾頭夾具25是具備：磁場通過之磁導率低的夾頭安裝部251，及遮蔽磁場之磁導率高的遮蔽板252。夾頭安裝部251是在對向的2個的角具有缺口，使可由上方來確認夾頭。並且，在四邊的各中央附近具有缺口，使夾頭更換治具可把持夾頭(夾鉗而保持)。遮蔽板252是在中央附近具有開口部，在夾頭安裝部251上以黏著、焊接或磁力來固定。夾頭安裝部251是具備：在中心連通至拾取頭21的吸附孔的吸附孔251a，及固定夾頭22(42)的磁石251。夾頭安裝部251的相對磁導率是1附近為理想，例如使用沃斯田鐵(austenite)系不鏽鋼或SKD(高碳的合金工具鋼)等。遮蔽板252的相對磁導率是2000以上為理想，遮蔽板252是例如使用磁軛(yoke)的鋼板(SS400)。The chuck clamp 25 is provided with a chuck mounting portion 251 with a low permeability through which a magnetic field passes, and a shield plate 252 with a high permeability for shielding the magnetic field. The chuck attachment portion 251 has notches at two opposite corners so that the chuck can be confirmed from above. In addition, a notch is provided near the center of each of the four sides, so that the chuck can be held by the chuck replacement jig (clamp and held). The shielding plate 252 has an opening near the center, and is fixed to the chuck mounting portion 251 by adhesion, welding, or magnetic force. The chuck mounting part 251 is provided with the suction hole 251a which communicates with the suction hole of the pick-up head 21 at the center, and the magnet 251 which fixes the chuck 22 (42). The relative magnetic permeability of the chuck mounting portion 251 is preferably around 1, and for example, austenitic stainless steel or SKD (high carbon alloy tool steel) is used. The relative magnetic permeability of the shielding plate 252 is preferably 2000 or more, and the shielding plate 252 is, for example, a steel plate (SS400) using a yoke.

以高磁導率材料(強磁性體)覆蓋下可遮蔽磁氣的理由是因為所謂磁場是磁力線的通過，磁力線是具有通過更容易通過之處的性質，所以藉由以磁氣容易通過者來覆蓋所欲自磁氣遮蔽者，可將磁力線引導至那邊，結果使磁力線不會通過內容物。將磁力線的通過容易度稱為磁導率，以將真空設為1時的比(相對磁導率)來表示。在通常的鋼板(SS400)為2000~3000程度。The reason why the magnetic field can be shielded by covering with a high-permeability material (ferromagnetic body) is because the so-called magnetic field is the passage of magnetic force lines, which have the property of passing through places that are easier to pass. Therefore, the magnetic field can easily pass through. To cover the person who wants to be shielded from the magnetic field, the magnetic field lines can be guided there, so that the magnetic field lines will not pass through the contents. The ease of passage of magnetic lines of force is called magnetic permeability, and is expressed as a ratio (relative permeability) when vacuum is set to 1. Normal steel plate (SS400) is about 2000~3000.

夾頭22(42)是能以磁石固定的方式，在矽橡膠等的彈性體的背面熔敷不鏽鋼(SUS(磁性))，將4邊保持於夾頭夾具25，為了吸附晶粒D，而具備連通至吸附孔251a的複數的吸附孔(未圖示)。The chuck 22 (42) can be fixed with a magnet. Stainless steel (SUS (magnetic)) is welded to the back of an elastomer such as silicone rubber, and the four sides are held in the chuck clamp 25. In order to adsorb the die D, A plurality of adsorption holes (not shown) connected to the adsorption holes 251a are provided.

(比較例1) 　　利用圖6來說明有關比較例1的夾頭夾具。圖6是用以說明比較例1的夾頭夾具的圖，圖6(A)是夾頭夾具的側面圖，圖6(B)是夾頭夾具的分解立體圖。(Comparative Example 1) 　　 The chuck fixture of Comparative Example 1 will be described with reference to Fig. 6. Fig. 6 is a diagram for explaining the chuck jig of Comparative Example 1, Fig. 6(A) is a side view of the chuck jig, and Fig. 6(B) is an exploded perspective view of the chuck jig.

比較例1的夾頭夾具25R是具備：遮蔽磁場之磁導率高的夾頭安裝部251R，及磁場通過之磁導率低的遮蔽板252R。比較例1是無藉由夾頭夾具之夾頭的吸附力，漏磁也大。The chuck clamp 25R of Comparative Example 1 is provided with a chuck mounting portion 251R having a high permeability for shielding a magnetic field, and a shielding plate 252R having a low permeability for passing a magnetic field. Comparative Example 1 does not have the suction force of the chuck by the chuck clamp, and the magnetic flux leakage is also large.

(比較例2) 　　利用圖7來說明有關比較例2的夾頭夾具。圖7是用以說明比較例2的夾頭夾具的圖，圖7(A)是夾頭夾具的側面圖，圖7(B)是夾頭夾具的立體圖。(Comparative Example 2) 　　 The chuck fixture of Comparative Example 2 will be described with reference to Fig. 7. Fig. 7 is a diagram for explaining the chuck jig of Comparative Example 2, Fig. 7(A) is a side view of the chuck jig, and Fig. 7(B) is a perspective view of the chuck jig.

比較例2的夾頭夾具25S是具備磁場通過之磁導率低的夾頭安裝部251S，但不具備遮蔽磁場之磁導率高的遮蔽板252。比較例2雖有藉由夾頭夾具之夾頭的吸附力，但漏磁大。The chuck holder 25S of Comparative Example 2 is provided with a chuck mounting portion 251S with a low permeability through which a magnetic field passes, but does not include a shield plate 252 with a high permeability for shielding the magnetic field. Although Comparative Example 2 has the adsorption force of the chuck by the chuck clamp, the magnetic flux leakage is large.

若根據實施例，則上部因為遮蔽板252的效果，磁力不易漏至外部，下部因為夾頭安裝，磁力不易洩漏。藉此，確保夾頭夾具之夾頭的吸附力，可抑制漏磁。並且，減低漏磁所造成對感測器等的周邊磁氣電路的影響，可防止誤檢測或精度降低。According to the embodiment, the upper part is not easy to leak to the outside due to the effect of the shielding plate 252, and the lower part is not easy to leak because the chuck is installed. In this way, the suction force of the chuck of the chuck clamp is ensured, and the magnetic flux leakage can be suppressed. In addition, the influence of magnetic leakage on peripheral magnetic circuits of sensors, etc., is reduced, which can prevent false detection or decrease in accuracy.

其次，利用圖8來說明有關使用實施例的黏晶機的半導體裝置的製造方法。圖8是表示半導體裝置的製造方法的流程圖。Next, a method of manufacturing a semiconductor device using the die bonder of the embodiment will be explained using FIG. 8. FIG. 8 is a flowchart showing a method of manufacturing a semiconductor device.

步驟S11：將保持貼附有從晶圓11分割的晶粒D的切割膠帶16的晶圓環14儲存於晶圓盒(未圖示)，搬入至黏晶機10。控制裝置8是從充填有晶圓環14的晶圓盒供給晶圓環14至晶粒供給部1。並且，準備基板S，搬入至黏晶機10。控制裝置8是以基板供給部6來將基板S載置於搬送道52。Step S11: The wafer ring 14 holding the dicing tape 16 to which the die D divided from the wafer 11 is attached is stored in a wafer cassette (not shown), and carried into the die bonder 10. The control device 8 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply unit 1. Then, the substrate S is prepared and loaded into the die bonder 10. The control device 8 places the substrate S on the conveyance path 52 by the substrate supply unit 6.

步驟S12：控制裝置8是從被保持於晶圓環14的切割膠帶16拾取晶粒D。Step S12: The control device 8 picks up the die D from the dicing tape 16 held on the wafer ring 14.

步驟S13：控制裝置8是將拾取後的晶粒D搭載於基板S的封裝區域P上或層疊於已接合的晶粒上。更具體而言，控制裝置8是將從切割膠帶16拾取後的晶粒D載置於中間平台31，以接合頭41來從中間平台31再度拾取晶粒D，接合於被搬送來的基板S的封裝區域P。Step S13: The control device 8 mounts the picked-up die D on the packaging area P of the substrate S or stacks it on the bonded die. More specifically, the control device 8 places the die D picked up from the dicing tape 16 on the intermediate platform 31, and uses the bonding head 41 to pick up the die D from the intermediate platform 31 again, and bond it to the transferred substrate S的Package area P.

步驟S14：控制裝置8是以基板搬送爪51來將基板S移動至基板搬出部7，將基板S交給基板搬出部7，從黏晶機10搬出基板S(基板卸載)。 ＜變形例＞ 　　以下舉例說明有關代表性的變形例。在以下的變形例的說明中，對於具有與在上述的實施例說明者同樣的構成及機能的部分是可使用與上述的實施例同樣的符號。而且，有關如此的部分的說明是可在技術上不矛盾的範圍內，適當援用上述的實施例的說明。並且，上述的實施例的一部分及變形例的全部或一部分可在技術上不矛盾的範圍內，適當複合地適用。Step S14: The control device 8 uses the substrate transfer claw 51 to move the substrate S to the substrate unloading section 7, and transfers the substrate S to the substrate unloading section 7, and unloads the substrate S from the die bonder 10 (substrate unloading). <Modifications> 　　 The following examples illustrate representative modifications. In the description of the following modification examples, the same reference numerals as in the above-mentioned embodiment can be used for parts having the same configuration and function as those described in the above-mentioned embodiment. In addition, the description of such a part may appropriately refer to the description of the above-mentioned embodiment to the extent that there is no technical contradiction. In addition, part of the above-mentioned embodiments and all or part of the modified examples can be appropriately combined and applied within a range that is not technically contradictory.

利用圖9來說明有關變形例的夾頭夾具。圖9是用以說明變形例的夾頭夾具的圖，圖9(A)是拾取頭、夾頭夾具及夾頭的剖面圖，圖9(B)是夾頭夾具的底面圖。The chuck jig related to the modified example will be described with reference to FIG. 9. Fig. 9 is a diagram for explaining a chuck jig of a modified example, Fig. 9(A) is a cross-sectional view of the pickup head, the chuck jig, and the chuck, and Fig. 9(B) is a bottom view of the chuck jig.

拾取頭21是具有吸附空氣流動於中心的吸附孔21a，具備：在前端側連接至夾頭夾具25A的夾頭柄21b，及將夾頭夾具25A固定於夾頭柄21b的夾頭固定部21c。The pickup head 21 has a suction hole 21a through which suction air flows in the center, and is provided with a chuck handle 21b connected to the chuck clamp 25A on the front end side, and a chuck fixing portion 21c for fixing the chuck clamp 25A to the chuck handle 21b .

夾頭夾具25A是具備以遮蔽磁場之磁導率高的材料所製作的夾頭安裝部251A。夾頭安裝部251A是具備：在中心連通至拾取頭21的吸附孔21a的吸附孔251a，及固定夾頭22的磁石251b。夾頭安裝部251A的相對磁導率是2000以上為理想，例如使用通常的鋼板(SS400)。磁石251b是被配置於夾頭安裝面，例如f2.5mm×1mm的大小。The chuck clamp 25A is provided with a chuck mounting portion 251A made of a material with high magnetic permeability that shields a magnetic field. The chuck mounting portion 251A includes a suction hole 251a that communicates with the suction hole 21a of the pickup 21 at the center, and a magnet 251b that fixes the chuck 22. The relative permeability of the chuck attachment portion 251A is preferably 2000 or more, and for example, a normal steel plate (SS400) is used. The magnet 251b is arranged on the chuck mounting surface, and has a size of f2.5 mm×1 mm, for example.

夾頭22是能以磁石固定的方式，在矽橡膠等的彈性體22a的背面熔敷不鏽鋼(SUS(磁性))22b，將4邊保持於夾頭夾具25A，為了吸附晶粒D，而具備連通至吸附孔251a的複數的吸附孔(未圖示)。在彈性體22a的表面是具有與晶粒D接觸而保持的保持部22c。保持部22c是與彈性體22a一體形成，與晶粒D同程度的大小。The chuck 22 can be fixed with a magnet. Stainless steel (SUS (magnetic)) 22b is welded to the back surface of the elastic body 22a such as silicon rubber, and the four sides are held in the chuck jig 25A. It is equipped to absorb the die D. Plural adsorption holes (not shown) connected to the adsorption holes 251a. The surface of the elastic body 22a has a holding portion 22c that is in contact with the die D and held. The holding portion 22c is formed integrally with the elastic body 22a and has the same size as the crystal grain D.

磁石251b的上方是被磁導率高的夾頭安裝部251A所覆蓋，磁石251b的底面是從夾頭安裝部251A露出而未被磁導率高的材料所覆蓋，因此具有與實施例同樣的效果。The upper part of the magnet 251b is covered by the chuck mounting part 251A with high magnetic permeability, and the bottom surface of the magnet 251b is exposed from the chuck mounting part 251A without being covered by the material with high magnetic permeability, so it has the same effect.

雖針對拾取頭21進行說明，但接合頭41也同樣。Although the pickup head 21 is described, the bonding head 41 is the same.

以上，根據實施例具體說明本發明者所研發的發明，但本發明是不限於上述實施例，當然可實施各種變更。In the above, the invention developed by the present inventor is specifically described based on the embodiment, but the present invention is not limited to the above embodiment, and of course various modifications can be implemented.

例如，亦可為具備複數組包括拾取部、對準部及接合部的安裝部及搬送道之黏晶機，或亦可具備複數組包括拾取部、對準部及接合部的安裝部，搬送道則是具備一個。For example, it can also be a die bonder with a complex array of mounting parts including picking parts, alignment parts, and joining parts and a conveying path, or a multiple array of mounting parts including picking parts, alignment parts, and joining parts, and conveying Tao has one.

又，實施例是說明使用晶粒黏結薄膜的例子，但亦可設置：在基板塗佈黏著劑的預先形成(preform)部，而不使用晶粒黏結薄膜。In addition, the embodiment is an example of using a die bonding film, but it can also be provided that the preform part of the substrate is coated with an adhesive instead of using the die bonding film.

又，實施例是說明有關以拾取頭來從晶粒供給部拾取晶粒而載置於中間平台，以接合頭來將被載置於中間平台的晶粒接合於基板的黏晶機，但不限於此，可適用於從晶粒供給部拾取晶粒的半導體製造裝置。 　　例如，無中間平台與拾取頭，以接合頭來將晶粒供給部的晶粒接合於基板的黏晶機也可適用。 　　又，可適用於無中間平台，從晶粒供給部拾取晶粒，將晶粒拾取頭旋轉至上面，而將晶粒交給接合頭，以接合頭來接合於基板的覆晶機(Flip Chip Bonder)。 　　又，可適用於無中間平台與接合頭，將從晶粒供給部以拾取頭拾取後的晶粒載置於托盤等的晶粒分選機。In addition, the embodiment describes a die bonder that uses a pick-up head to pick up die from the die supply part and place it on the intermediate platform, and uses a bonding head to bond the die placed on the intermediate platform to the substrate. Limited to this, it can be applied to a semiconductor manufacturing apparatus that picks up a die from a die supply part. "For example, a die bonder that does not have an intermediate platform and a pick-up head, but uses a bonding head to bond the die of the die supply part to the substrate. In addition, it can be applied to a flip chip machine without an intermediate platform, picking up the die from the die supply part, rotating the die pick-up head to the top, and handing the die to the bonding head, and using the bonding head to bond to the substrate (Flip Chip Bonder).　　 Also, it can be applied to a die sorting machine that does not have an intermediate platform and a bonding head, and places the die picked up by the pickup head from the die supply part on a tray or the like.

10‧‧‧黏晶機1‧‧‧晶粒供給部13‧‧‧頂起單元2‧‧‧拾取部21‧‧‧拾取頭22‧‧‧夾頭25‧‧‧夾頭夾具251‧‧‧夾頭安裝部252‧‧‧遮蔽板24‧‧‧晶圓識別攝影機3‧‧‧中間平台部31‧‧‧中間平台32‧‧‧平台識別攝影機4‧‧‧接合部41‧‧‧接合頭42‧‧‧夾頭44‧‧‧基板識別攝影機5‧‧‧搬送部51‧‧‧基板搬送爪8‧‧‧控制裝置BS‧‧‧接合平台D‧‧‧晶粒P‧‧‧封裝區域S‧‧‧基板10‧‧‧Die bonding machine 1‧‧‧Die supply part 13‧‧‧Elevating unit 2‧‧‧Pickup part 21‧‧‧Pickup head 22‧‧‧Clamp 25‧‧‧Clamp clamp 251‧‧ ‧Clamp mounting part 252‧‧‧Shield plate 24‧‧‧Wafer recognition camera 3‧‧‧Intermediate platform 31‧‧‧Intermediate platform 32‧‧‧Platform recognition camera 4‧‧‧Joint part 41‧‧‧Join Head 42‧‧‧Chuck 44‧‧‧Substrate recognition camera 5‧‧‧Transfer part 51‧‧‧Substrate conveying claw 8‧‧Control device BS‧‧‧Join platform D‧‧‧Die P‧‧‧Packaging Area S‧‧‧Substrate

圖1是表示黏晶機的構成例的概略俯視圖。 　　圖2是說明在圖1中從箭號A方向看時的概略構成的圖。 　　圖3是表示圖1的晶粒供給部的構成的外觀立體圖。 　　圖4是表示圖2的晶粒供給部的主要部的概略剖面圖。 　　圖5是說明實施例的夾頭夾具的構造的圖。 　　圖6是說明比較例1的夾頭夾具的構造的圖。 　　圖7是說明比較例2的夾頭夾具的構造的圖。 　　圖8是表示半導體裝置的製造方法的流程圖。 　　圖9是說明變形例的夾頭夾具的構造的圖。Fig. 1 is a schematic plan view showing a configuration example of a die bonder.　　 FIG. 2 is a diagram illustrating a schematic configuration when viewed from the direction of arrow A in FIG. 1.　　 FIG. 3 is an external perspective view showing the configuration of the crystal grain supply part of FIG. 1.　　 FIG. 4 is a schematic cross-sectional view showing the main part of the crystal grain supply part of FIG. 2.　　 FIG. 5 is a diagram illustrating the structure of the chuck clamp of the embodiment.　　 FIG. 6 is a diagram illustrating the structure of the chuck jig of Comparative Example 1.　　 FIG. 7 is a diagram illustrating the structure of a chuck jig of Comparative Example 2.　　 FIG. 8 is a flowchart showing a method of manufacturing a semiconductor device.　　 FIG. 9 is a diagram illustrating the structure of a chuck clamp according to a modification.

22(42)‧‧‧夾頭 22(42)‧‧‧Chuck

25‧‧‧夾頭夾具 25‧‧‧Chuck fixture

251‧‧‧夾頭安裝部 251‧‧‧Chuck mounting part

251a‧‧‧吸附孔 251a‧‧‧Adsorption hole

251b‧‧‧磁石 251b‧‧‧Magnet

252‧‧‧遮蔽板 252‧‧‧Shielding plate

Claims (13)

一種半導體製造裝置，其特徵係具備：夾頭夾具，其係以磁石來保持夾頭；及頭，其係於前端具備該夾頭夾具，以前述夾頭來吸附拾取晶粒，前述夾頭夾具係具備：遮蔽部，其係被設於前述磁石的上方，遮蔽前述磁石的磁場；及通過部，其係被設於前述磁石的下方，通過前述磁石的磁場。 A semiconductor manufacturing device is characterized by comprising: a chuck holder, which uses a magnet to hold the chuck; and a head, which is provided with the chuck holder at the front end, and uses the chuck to suck and pick up the die, and the chuck holder The system includes: a shielding portion provided above the magnet to shield the magnetic field of the magnet; and a passage portion provided below the magnet and passing the magnetic field of the magnet. 如申請專利範圍第1項之半導體製造裝置，其中，前述通過部為以使磁場通過的材料所形成，以磁石來固定前述夾頭的夾頭安裝部，前述遮蔽部為設於與前述夾頭的安裝面相反側，遮蔽前述磁石的磁場的遮蔽板。 For example, the semiconductor manufacturing apparatus of the first item of the patent application, wherein the passage portion is formed of a material that allows a magnetic field to pass through, and the chuck mounting portion of the chuck is fixed by a magnet, and the shielding portion is provided with the chuck On the opposite side of the mounting surface, a shielding plate that shields the magnetic field of the magnet. 如申請專利範圍第2項之半導體製造裝置，其中，前述遮蔽板的相對磁導率為2000以上，且3000以下。 For example, the semiconductor manufacturing device of the second item of the scope of patent application, wherein the relative magnetic permeability of the aforementioned shielding plate is 2000 or more and 3000 or less. 如申請專利範圍第3項之半導體製造裝置，其中，前述遮蔽板的材料為SS400。 For example, the semiconductor manufacturing device of the third item in the scope of patent application, wherein the material of the aforementioned shielding plate is SS400. 如申請專利範圍第1項之半導體製造裝置，其中，前述通過部為前述夾頭的安裝面，前述遮蔽部為以使磁場遮蔽的材料所形成，以磁石來固定前述夾頭的夾頭安裝部。 The semiconductor manufacturing device of the first item of the scope of patent application, wherein the passage portion is the mounting surface of the chuck, the shielding portion is formed of a material that shields the magnetic field, and the chuck mounting portion of the chuck is fixed by a magnet . 如申請專利範圍第5項之半導體製造裝置，其中，前述夾頭安裝部的相對磁導率為2000以上，且3000以下。 For example, the semiconductor manufacturing device of the fifth item of the scope of patent application, wherein the relative magnetic permeability of the chuck mounting portion is 2000 or more and 3000 or less. 如申請專利範圍第6項之半導體製造裝置，其中，前述夾頭安裝部的材料為SS400。 For example, the semiconductor manufacturing device of the 6th patent application, wherein the material of the chuck mounting part is SS400. 如申請專利範圍第1項之半導體製造裝置，其中，更具備晶粒供給部，其係具有保持貼附有晶粒的切割膠帶的晶圓環，前述頭為拾取被貼附於前述切割膠帶的晶粒的拾取頭。 For example, the semiconductor manufacturing device of the first item in the scope of the patent application is further provided with a die supply part, which has a wafer ring holding the dicing tape attached to the die, and the head is used for picking up the dicing tape attached to the dicing tape. Pickup head for die. 如申請專利範圍第8項之半導體製造裝置，其中，更具備：中間平台，其係載置以前述拾取頭所拾取的晶粒；及接合頭，其係將從前述中間平台拾取後的晶粒接合於基板或已被接合的晶粒上，前述接合頭係具備前述夾頭夾具。 For example, the semiconductor manufacturing device of item 8 of the scope of patent application, which is further provided with: an intermediate platform for placing the die picked up by the aforementioned pickup head; and a bonding head, which is the die picked up from the aforementioned intermediate platform To be bonded to the substrate or the bonded die, the bonding head includes the chuck clamp. 如申請專利範圍第1項之半導體製造裝置，其中，更具備晶粒供給部，其係具有保持貼附有晶粒的切割膠帶的晶圓環，前述頭為拾取被貼附於前述切割膠帶的晶粒，接合於基板或已被接合的晶粒上的接合頭。 For example, the semiconductor manufacturing device of the first item in the scope of the patent application is further provided with a die supply part, which has a wafer ring holding the dicing tape attached to the die, and the head is used for picking up the dicing tape attached to the dicing tape. Die, a bonding head that is bonded to a substrate or a die that has been bonded. 一種半導體裝置的製造方法，其特徵係具備：(a)準備如申請專利範圍第1至10項中的任一項所記載的半導體製造裝置之工程；(b)將保持貼附有晶粒的切割膠帶的晶圓環搬入之工程；(c)準備搬入基板之工程；(d)拾取晶粒之工程；及(e)將前述拾取後的晶粒接合於前述基板或已被接合的晶粒上之工程。 A method of manufacturing a semiconductor device, which is characterized by: (a) preparing the process of preparing a semiconductor manufacturing device as described in any one of items 1 to 10 in the scope of the patent application; (b) keeping the die attached The process of loading the wafer ring of the dicing tape; (c) the process of preparing to transfer the substrate; (d) the process of picking up the die; and (e) bonding the picked-up die to the foregoing substrate or the bonded die On the project. 如申請專利範圍第11項之半導體裝置的製造方法，其中，前述(d)工程係以接合頭來拾取被貼附於前述切割膠帶的晶粒，前述(e)工程係將以前述接合頭所拾取後的晶粒接合於前述基板或已被接合的晶粒上。 For example, the method of manufacturing a semiconductor device according to the eleventh patent application, wherein the aforementioned (d) process uses a bonding head to pick up the die attached to the aforementioned dicing tape, and the aforementioned (e) process uses the aforementioned bonding head. The picked-up die is bonded to the aforementioned substrate or the bonded die. 如申請專利範圍第11項之半導體裝置的製造方法，其 中，前述(d)工程係具有：(d1)以拾取頭來拾取被貼附於前述切割膠帶的晶粒之工程；及(d2)將以前述拾取頭所拾取後的晶粒載置於中間平台之工程，前述(e)工程係具備：(e1)以接合頭來拾取被載置於前述中間平台的晶粒之工程；及(e2)將以前述接合頭所拾取後的晶粒載置於前述基板之工程。 For example, the manufacturing method of the semiconductor device of the 11th item of the patent application, which Among them, the aforementioned (d) process has: (d1) a process of picking up the die attached to the aforementioned dicing tape with a pick-up head; and (d2) placing the die picked up by the aforementioned pick-up head in the middle For platform engineering, the aforementioned (e) engineering system is equipped with: (e1) the process of picking up the die placed on the intermediate platform with the bonding head; and (e2) placing the die picked up by the bonding head In the aforementioned substrate engineering.
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