TW202025334A - Semiconductor manufacturing apparatus push-up jig and method for manufacturing semiconductor device - Google Patents
Semiconductor manufacturing apparatus push-up jig and method for manufacturing semiconductor device Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
Description
本揭示,係關於半導體製造裝置,例如可應用於具備有頂出單元的半導體製造裝置。The present disclosure relates to semiconductor manufacturing equipment, and can be applied to, for example, semiconductor manufacturing equipment provided with ejector units.
在將被稱為晶粒的半導體晶片搭載於例如配線基板或引線框架等(以下,總稱為基板。)之表面的晶粒接合器中,係重複進行如下述這樣的動作(作業):使用筒夾(collet)等吸附噴嘴,將晶粒搬送至基板上,賦予按壓力並且加熱接合材料,藉此,進行接合。In a die bonder that mounts a semiconductor wafer called a die on the surface of, for example, a wiring board or a lead frame (hereinafter, collectively referred to as a substrate), the following actions (work) are repeated: A collet or the like sucks nozzles, transfers the die to the substrate, applies a pressing force and heats the bonding material, thereby performing bonding.
在晶粒接合器等的半導體製造裝置所致之晶粒接合工程中,係有將從半導體晶圓(以下,稱為晶圓。)所分割之晶粒剝離的剝離工程。在剝離工程中,係藉由頂出銷或塊體,從切割帶背面頂出晶粒,且從被保持於晶粒供給部的切割帶1個1個進行剝離,並使用筒夾等的吸附噴嘴搬送至基板上。Among the die bonding processes performed by semiconductor manufacturing equipment such as die bonders, there is a peeling process for peeling the divided die from a semiconductor wafer (hereinafter referred to as a wafer). In the peeling process, the die is ejected from the back of the dicing tape by ejector pins or blocks, and the dicing tape is peeled one by one from the dicing tape held in the die supply part, and the collet is used for adsorption The nozzle is transported to the substrate.
作為從切割帶拾取晶粒之方法,係例如提出如下述方法:在使切割片吸附於圓板狀之頂出頂蓋(ejector cap)且使半導體晶粒吸附於筒夾的狀態下,使筒夾及周邊、中間、中央的各頂出塊體上升至比頂出頂蓋之表面高的預定高度後,將筒夾之高度保持為此種高度,並按照周圍之頂出塊體、中間之頂出塊體的順序,使頂出塊體下降至比頂出頂蓋之表面更下方的位置,從而自半導體晶粒剝離切割片(例如專利文獻1之先前技術)。 [先前技術文獻] [專利文獻]As a method of picking up the die from the dicing tape, for example, the following method is proposed: in a state where the dicing sheet is adsorbed to a disc-shaped ejector cap and the semiconductor die is adsorbed to the collet, the tube After the clamps and the surrounding, middle, and central ejector blocks rise to a predetermined height higher than the surface of the ejector top cover, the height of the collet is maintained at this height, and the ejector blocks around the The sequence of ejecting the block is such that the ejecting block is lowered to a position below the surface of the ejecting top cover, thereby peeling the dicing sheet from the semiconductor die (for example, the prior art of Patent Document 1). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2015-179813號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-179813
[本發明所欲解決之課題][Problem to be solved by the present invention]
本揭示之課題,係提供一種能以簡單構成執行頂出治具的半導體製造裝置,該頂出治具,係進行先前技術所記載的拾取方法。 其他課題及新穎之特徵,係可由本說明書的記述及附加圖面明確得知。 [用以解決課題之手段]The subject of the present disclosure is to provide a semiconductor manufacturing device that can implement an ejection jig with a simple configuration, and the ejection jig implements the picking method described in the prior art. Other topics and novel features are clearly known from the description of this manual and the attached drawings. [Means to solve the problem]
如下述般,簡單地說明本揭示中代表性者之概要。 亦即,半導體製造裝置,係具備有:晶圓保持台,保持具有晶粒的切割帶;及頂出單元,將前述晶粒從前述切割帶的下方頂出。前述頂出單元,係具備有:筒狀之圓頂;塊體部,具有位於中央之柱狀的主塊體與位於前述主塊體之外側的環狀之複數個塊體,並進行上下動作;底部基座,基於頂出軸桿之上下動作,使前述塊體部上下動作;及機構,將前述底部基座之上下動作變換成前述複數個塊體之最外側的塊體之上下動作。以下述方式構成:藉由將前述頂出軸桿往上方上推的方式,前述底部基座、前述中央塊體及前述複數個塊體被上推,並藉由將前述頂出軸桿進一步上推的方式,前述底部基座被上堆,且藉由前述機構,前述最外側之塊體被下拉。 [發明之效果]The outline of the representative ones in this disclosure is briefly described as follows. That is, the semiconductor manufacturing apparatus is provided with: a wafer holding table for holding a dicing tape with die; and an ejection unit for ejecting the die from below the dicing tape. The aforementioned ejection unit is provided with: a cylindrical dome; a block part with a columnar main block located in the center and a plurality of ring-shaped blocks located on the outer side of the main block, and moves up and down The bottom base, based on the up and down movement of the ejector shaft, makes the block part move up and down; and a mechanism that transforms the up and down movement of the bottom base into the up and down movement of the outermost block of the plurality of blocks. It is constructed in the following manner: by pushing up the ejection shaft, the bottom base, the central block and the plurality of blocks are pushed up, and the ejection shaft is further pushed up. By pushing, the bottom base is stacked, and the outermost block is pulled down by the mechanism. [Effects of Invention]
根據上述半導體製造裝置,頂出治具之構成變得簡單。According to the above semiconductor manufacturing apparatus, the structure of the ejector jig becomes simple.
以下,參照圖面,說明關於實施形態。但是,在以下的說明中,對同一構成要素附上同一符號,省略重複之說明。另外,圖面,係為了使說明更明確,與實際之形態相比,有針對各部之寬度、厚度、形狀等示意地顯示的情形,但始終為一例,並非限定本發明之解釋。Hereinafter, the embodiment will be described with reference to the drawings. However, in the following description, the same reference numerals are attached to the same components, and repeated descriptions are omitted. In addition, the drawings are shown schematically for the width, thickness, shape, etc. of each part compared with the actual form in order to make the description clearer, but they are always an example and do not limit the interpretation of the present invention.
圖1,係表示實施形態之晶粒接合器之概略的上視圖。圖2,係說明在圖1中從箭頭A方向觀看時,拾取頭及接合頭之動作的圖。Fig. 1 is a top view schematically showing the die bonder of the embodiment. Fig. 2 is a diagram illustrating the actions of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1.
晶粒接合器10,係一般具有:晶粒供給部1,其供給安裝至基板S的晶粒D,該基板S,係印刷了1個或複數個成為最終1封裝的製品區域(以下,稱為封裝區域P。);拾取部2、中間平台部3;接合部4;搬送部5、基板供給部6;基板搬出部7;及控制部8,監視各部之動作並進行控制。Y軸方向為晶粒接合器10的前後方向,X軸方向為左右方向。晶粒供給部1被配置於晶粒接合器10的前側,接合部4被配置於後側。The die
首先,晶粒供給部1,係供給安裝至基板S之封裝區域P的晶粒D。晶粒供給部1,係具有:保持晶圓11的晶圓保持台12;及將晶粒D從晶圓11頂出之以點線所示的頂出單元13。晶粒供給部1,係藉由未圖示之驅動裝置,沿XY軸方向移動,並使拾取之晶粒D移動至頂出單元13的位置。First, the
拾取部2,係具有:拾取頭21,拾取晶粒D;拾取頭之Y驅動部23,使拾取頭21沿Y軸方向移動;及未圖示之各驅動部,使筒夾22升降、旋轉及沿X軸方向移動。拾取頭21,係具有筒夾22(圖2亦參閱),並從晶粒供給部1拾取晶粒D且載置於中間平台31,該筒夾22,係將所頂出的晶粒D吸附保持於前端。拾取頭21,係具有:未圖示之各驅動部,使筒夾22升降、旋轉及沿X軸方向移動。The pick-
中間平台部3,係具有:中間平台31,暫時地載置晶粒D;及平台辨識攝影機32,用以識別中間平台31上的晶粒D。The
接合部4,係從中間平台31拾取晶粒D,接合於所搬送而來之基板S的封裝區域P上,或以層積於已被接合於基板S的封裝區域P上之晶粒上的形式進行接合。接合部4,係具有:接合頭41,具備有與拾取頭21相同地將晶粒D吸附保持於前端的筒夾42(圖2亦參閱);Y驅動部43,使接合頭41沿Y軸方向移動;及基板辨識攝影機44,拍攝基板S之封裝區域P的位置辨識標記(未圖示),並識別接合位置。
藉由像這樣的構成,接合頭41,係根據平台辨識攝影機32之攝像資料,修正拾取位置・姿勢,並從中間平台31拾取晶粒D,根據基板辨識攝影機44之攝像資料,將晶粒D接合於基板。The
搬送部5,係具有:抓住基板S而搬送的基板搬送爪51;及基板S進行移動的搬送道52。基板S,係藉由「以沿著搬送道52所設置之未圖示的滾珠螺桿來驅動被設置於搬送道52之基板搬送爪51之未圖示的螺帽」之方式,進行移動。
藉由像這樣的構成,基板S,係從基板供給部6沿著搬送道52移動至接合位置,並在接合後,移動至基板搬出部7,將基板S收授至基板搬出部7。The
控制部8,係具備有:記憶體,儲存有程式(軟體),該程式,係監視晶粒接合器10之各部的動作並進行控制;及中央處理裝置(CPU),執行被儲存於記憶體的程式。The
其次,使用圖3及圖4,說明關於晶粒供給部1的構成。圖3,係表示圖1之晶粒供給部之外觀立體圖的圖。圖4,係表示圖1之晶粒供給部之主要部的概略剖面圖。Next, the structure of the crystal
晶粒供給部1,係具備有:晶圓保持台12,沿水平方向(XY軸方向)移動;及頂出單元13,沿上下方向移動。晶圓保持台12,係具有:擴展環15,保持晶圓環14;及支撐環17,被保持於晶圓環14,水平地定位接著有複數個晶粒D的切割帶16。頂出單元13,係被配置於支撐環17之內側。The die
晶粒供給部1,係在晶粒D之頂出時,使保持晶圓環14的擴展環15下降。其結果,保持於晶圓環14之切割帶16被拉長,晶粒D的間隔擴大,藉由上推單元13,從晶粒D下方上推晶粒D,使晶粒D的拾取性提升。另外,將晶粒接著於基板之接著劑,係從液狀變成薄膜狀,將被稱為晶粒貼覆膜(DAF)18之薄膜狀的接著材料貼附於晶圓11與切割帶16之間。在具有晶粒貼覆膜18的晶圓11中,切割,係對晶圓11與晶粒貼覆膜18進行。因此,在剝離工程中,係將晶圓11與晶粒貼覆膜18從切割帶16剝離。另外,在以下中,係無視晶粒貼覆膜18的存在而說明剝離工程。The die
其次,使用圖5及圖6,說明關於頂出治具的構成。圖5,係圖4之頂出治具的上視圖。圖6,係圖5之頂出治具的A-A剖面圖。Next, the structure of the ejector jig will be explained using FIGS. 5 and 6. Figure 5 is a top view of the ejector jig shown in Figure 4. Fig. 6 is a cross-sectional view of A-A of the ejector fixture of Fig. 5.
頂出單元13,係一般具有頂出治具101與未圖示之驅動機構,如圖5所示般,頂出治具101,係具有主塊體102、塊體102a~102c、驅動主塊體102及塊體102a~102c的驅動部、保持該些的圓筒狀之圓頂104及蓋住圓頂104的圓頂板104a。The
圓頂板104a,係具有可進行主塊體102及塊體102a~102c之上下動作的開口,在其周邊部,係設置有複數個吸引口(未圖示)及複數個溝(未圖示)。吸引口及溝之各自的內部,係在使頂出治具101上升且使其上面與切割帶16的背面接觸之際,藉由未圖示的吸引機構而減壓,讓切割帶16之背面密接於圓頂板104a的上面。The
在頂出治具101A之中心部,係組裝有將切割帶16往上方頂出的4個塊體102,102a~102c。4個塊體102,102a~102c,係在最外側的環狀之塊體102a的內側配置有環狀之塊體102b,並在更其內側配置有環狀之塊體102c,且在更其內部配置柱狀之主塊體102。At the center of the
在圓頂板104a的周邊部與外側的塊體102a之間及4個塊體102,102a~102c之間,係設置有間隙G。該些間隙G之內部,係藉由未圖示的吸引機構而減壓,當切割帶16之背面接觸於頂出治具101的上面時,則切割帶16被吸引至下方,並密接於塊體102,102a~102c的上面。A gap G is provided between the periphery of the
與4個塊體102,102a~102c的下面接觸地分別設置有主塊體基座105、圓環等的環狀之塊體基座103a~103c,在主塊體基座105的下方設置有底部基座106。主塊體基座105,係具有:圓柱等的柱狀之主軸部105a,使圓頂104之中央部朝垂直方向延伸;圓盤狀之基座部105b,在主軸部105a之下端,朝水平方向延伸;及一對圓柱狀之副軸部105c,105d,從基座部105b之上方朝上方延伸。在一對副軸部105c,105d之各自的上部,係設置有一對小齒輪105e,105f,在主軸部105a之側面,係設置有突起105g,105h,105i。In contact with the lower surfaces of the four
底部基座106,係具有:圓盤狀之底部106a,朝水平方向延伸;及一對柱狀之驅動部106b,106c,從底部106a之上端朝上方延伸。驅動部106b,106c,係具有:溝,與小齒輪105e,105f的齒嚙合。The
主塊體102及塊體102a~102c,係分別被螺合固定於主塊體基座103及塊體基座103a~103c的上端,圓頂板104a,係被螺合固定於圓頂104的上端。藉此,主塊體102、塊體102a~102c及圓頂板104a,係可根據類型進行更換。即便為晶粒之平面形狀的大小因晶粒之類型而有所不同的情況下,亦不需依各類型準備頂出治具101。在根據類型不進行更換的情況下,主塊體102、塊體102a~102c及圓頂板104a,係亦可分別與主塊體基座105、塊體基座103a~103c及圓頂104形成一體。The
主塊體基座105、塊體基座103a~103c,係被連結於下述之驅動部的零件,並與頂出軸桿110連動地進行上下動作,該頂出軸桿110,係藉由以未圖示之馬達及凸輪等所構成的驅動機構而進行上下動作。
(a)介設於塊體基座103a與塊體基座103b之間的第五壓縮線圈彈簧108e
(b)介設於塊體基座103b與塊體基座103c之間的第四壓縮線圈彈簧108d
(c)介設於塊體基座103a與主塊體基座105之間的第三壓縮線圈彈簧108c
(d)介設於突起部104b與主塊體基座105之間的第二壓縮線圈彈簧108b,該突起部104b被設置於圓頂104的內壁
(e)介設於底部基座106與主塊體基座105之間且彈簧常數比第二壓縮線圈彈簧108d大的第一壓縮線圈彈簧108a
(f)介設於塊體基座103a與底部基座106之間的小齒輪105e,105f
(g)抵接於頂出軸桿的底部基座106
另外,設置於主塊體基座105之突起105g~105i,係指設成為使塊體102a~102c之上面不高於塊體102之上面的止動件,且亦指不使塊體102b,102c過度下降的止動件。藉此,在初始狀態中,4個塊體102,102a~102c之各自的上面之高度,係成為彼此相等。The
塊體102a之平面視圖的形狀,係與成為剝離的對象之晶粒D相同的長方形,其尺寸,係稍小於晶粒D之尺寸。在與晶粒D之尺寸相比,塊體102a之尺寸過小的情況下,係即便以塊體102a~102d頂出切割帶16之背面,晶粒D的外周部亦難以從切割帶16剝離。這是因為晶粒D比90μm以下等切割帶16之厚度薄且晶粒D的剛性極低,從而有成為彎曲的狀態而導致晶粒D破裂之虞。另一方面,在塊體102a之尺寸與晶粒D之尺寸相等或為其以上的情況下,係有導致與成為剝離的對象之晶粒D鄰接的其他晶粒D亦同時被提起之虞。因此,在本實施形態中,從晶粒D之外周部起至塊體102a之外周部的較佳距離,係例如設成為0.5mm~0.75mm者。The shape of the
配置於塊體102a之內側的平面視圖呈框狀之塊體102b的尺寸,係比塊體102a的尺寸小1mm~3mm左右。又,配置於塊體102b之內側的塊體102c之尺寸,係比塊體102b更小1mm~3mm左右。又,配置於塊體102c之內側的塊體102d之尺寸,係比塊體102c更小1mm~3mm左右。另外,主塊體102之寬度,係比塊體102a~102c的任一寬度(外側的邊與內側的邊之間的長度)大。在本實施形態中,雖係考慮加工的容易度等而將塊體102,102a~102c之形狀設成為長方形,但並不限定於此,例如亦可設成為橢圓形。The size of the
上述之4個塊體102,102a~102c之各自的上面之高度,係在初始狀態(塊體102,102a~102c的非動作時)中為彼此相等,又,稍低於頂出治具101之上面周邊部(圓頂板104a)的高度。The heights of the upper surfaces of the four
其次,說明如下述般的方法:使用具備有如上述般的塊體102,102a~102c之頂出治具101,將晶粒D從切割帶16剝離。圖7,係說明圖6之頂出治具之動作的圖;圖7(A),係表示初始狀態的剖面圖;圖7(B),係表示所有塊體被頂出之狀態的剖面圖。圖8,係說明圖6之頂出治具之動作的圖;圖8(A),係表示將最外側之塊體下拉後之狀態的剖面圖;圖8(B),係表示將從外側起第2個塊體下拉後之狀態的剖面圖。圖9,係說明圖6之頂出治具之動作的圖,且為將從外側起第3個塊體下拉後之狀態的剖面圖。Next, a method will be described in which the die D is peeled from the dicing
首先,對被定位在圖3及圖4所示之晶圓保持台12的切割帶16照射紫外線。藉此,由於被塗佈至切割帶16的黏著劑硬化且其黏著性降低,因此,切割帶16與晶粒貼覆膜18之界面剝離變得容易剝離。First, the dicing
其次,使晶圓保持台12之擴展環15下降,藉此,將被接著於切割帶16之周邊部的晶圓環14下壓至下方。如此一來,切割帶16接收從其中心部朝向周邊部的強大張力且不鬆弛地拉伸於水平方向。Next, the
其次,如圖4所示般,以使頂出治具101之中心部(塊體102,102a~102c)位於成為剝離的對象之一個晶粒D(位於同圖之中央部的晶粒D)之正下方的方式,使晶圓保持台12移動,並且使筒夾22移動至該晶粒D的上方。在被支撐於拾取頭21之筒夾22的底面,係設置有內部被減壓的吸附口(未圖示),且可僅選擇地吸附並保持成為剝離的對象之一個晶粒D。Next, as shown in FIG. 4, the center part of the ejector jig 101 (
在此,將主塊體102與主塊體基座105合併稱為中央塊體107,將塊體102a與塊體基座103a合併稱為第一塊體107a,將塊體102b與塊體基座103b合併稱為第二塊體107b,將塊體102c與塊體基座103c合併第三塊體107c。Here, the
其次,如圖7(A)所示般,將中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c的上面設成為相同高度,並設成為比圓頂板104a的上面稍降低之狀態(初始狀態),且使頂出治具101上升而使其上面接觸於切割帶16的背面,並且對前述之圓頂板104a的吸引口、溝及間隙G的內部進行減壓。藉此,成為剝離的對象之晶粒D的下方之切割帶16會密接於塊體102,102a~102c的上面。又,與該晶粒D鄰接之其他晶粒D的下方之切割帶16會密接於圓頂板104a。另一方面,使筒夾22與頂出治具101之上升大致同時地下降,並使其底面接觸於成為剝離的對象之晶粒D的上面,藉此,吸附晶粒D,並且輕輕地往下方按壓。Next, as shown in FIG. 7(A), the upper surfaces of the
其次,如圖7(B)所示般,將4個中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c同時往上方頂出,且對切割帶16之背面施加負載,並將晶粒D與切割帶16一起上推。Next, as shown in FIG. 7(B), the four
為了將4個中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c同時往上方頂出,係將圖7(B)所示之頂出軸桿110往上方上推,藉此,將與頂出軸桿110連結的底部基座106上推。藉此,藉由第一壓縮線圈彈簧108a的彈簧力,中央塊體107被上推,該第一壓縮線圈彈簧108a,係介設於底部基座106與中央塊體107之間。又,與此並行地,藉由第三壓縮線圈彈簧108c的彈簧力,第一塊體107a被上推,該第三壓縮線圈彈簧108c,係介設於中央塊體107與第一塊體107a之間。又,與此並行地,藉由第四壓縮線圈彈簧108d的彈簧力,第二塊體107b被上推,該第四壓縮線圈彈簧108d,係介設於第一塊體107a與第二塊體107b之間。又,與此並行地,藉由第五壓縮線圈彈簧108e的彈簧力,第三塊體107c被上推,該第五壓縮線圈彈簧108e,係介設於第二塊體107b與第三塊體107c之間。藉由該些,4個中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c被同時上推。而且,中央塊體107之一部分會與被設置於圓頂104之內壁的突起104c接觸,藉此,中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c的上升停止。In order to eject the four
中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c之頂出量,係因應晶粒D之尺寸進行增減為較理想。亦即,在晶粒D之尺寸較大的情況下,係由於與晶粒貼覆膜18之接觸面積大,故黏著力亦大,因此,必需增加頂出量。另一方面,在晶粒D之尺寸較小的情況下,係由於與晶粒貼覆膜18之接觸面積小,故黏著力亦小,因此,即便減少頂出量亦容易進行剝離。另外,由於被塗佈於切割帶16之感壓黏著劑,係黏著力因製造商或種類存在著差異,因此,即便為晶粒D之尺寸相同的情況下,亦必需因應感壓黏著劑之黏著力,改變中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c的頂出量。The ejection amount of the
其次,如圖8(A)所示般,當將被配置於最外側的第一塊體107a往下方下拉時,則開始晶粒貼覆膜18與切割帶16之剝離。此時,將與成為剝離的對象之晶粒D鄰接之其他晶粒D的下方之切割帶16吸引至下方,並使具密接於圓頂板104a,藉此,可防止其他晶粒D的剝離。Next, as shown in FIG. 8(A), when the
為了將第一塊體107a往下方下拉,係將圖8(A)所示之頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,由於中央塊體107,係與突起104c抵接,因此,中央塊體107不會被上推,小齒輪105e藉由底部基座106的驅動部106b而順時針旋轉,小齒輪105f藉由驅動部106c而逆時針旋轉。第一塊體107a,係具有與小齒輪105e,105f之齒輪嚙合的溝,並藉由小齒輪105e,105f之旋轉被下拉。此時,第一塊體107a之上面,係位於比圓頂板104a之上面高的位置。In order to pull the
在將第一塊體107a往下方下拉之際,係為了促進晶粒D的剝離,而對中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c之間隙G的內部進行減壓,藉此,預先將晶粒D之下方的切割帶16吸引至下方。又,對圓頂板104a之溝的內部進行減壓,預先使與圓頂板104a接觸的切割帶16密接於圓頂板104a的上面。When the
其次,如圖8(B)所示般,當將被配置於從最外側起第2個的第二塊體107b往下方下拉時,則晶粒貼覆膜18與切割帶16之剝離往晶粒D的中心方向行進。Next, as shown in FIG. 8(B), when the
為了將第二塊體107b往下方下拉,係將圖8(B)所示之頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,小齒輪105e藉由底部基座106的驅動部106b而順時針旋轉,小齒輪105f藉由驅動部106c而逆時針旋轉。第一塊體107a,係藉由小齒輪105e,105f之旋轉進一步被下拉。藉此,變得無間隙109b,第一塊體107a抵接於第二塊體107b,且第二塊體107b被下拉。第一塊體107a,係相對於第二塊體107b僅下降間隙109b。此時,第一塊體107a之上面,雖係位於比圓頂板104a之上面低的位置,但第二塊體107b之上面,係位於比圓頂板104a之上面高的位置。In order to pull the
其次,如圖9所示般,當將被配置於從最外側起第3個的第三塊體107c往下方下拉時,則晶粒貼覆膜18與切割帶16之剝離進一步往晶粒D的中心方向行進。Next, as shown in FIG. 9, when the
為了將第三塊體107c往下方下拉,係將圖9所示之頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,小齒輪105e藉由底部基座106的驅動部106b而順時針旋轉,小齒輪105f藉由驅動部106c而逆時針旋轉。第一塊體107a,係藉由小齒輪105e,105f之旋轉進一步被下拉,並且第二塊體107b進一步被下拉。藉此,變得無間隙109c,第二塊體107b抵接於第三塊體107c,且第三塊體107c被下拉。第二塊體107b,係相對於第三塊體107c僅下降間隙109c。In order to pull the
而且,在第三壓縮線圈彈簧108c完全收縮的時間點,第一塊體107a、第二塊體107b及第三塊體107c的下降停止。此時,第一塊體107a、第二塊體107b及第三塊體107c之上面,係位於比圓頂板104a之上面低的位置。Then, when the third
而且,將中央塊體107往下方下拉,並且將筒夾22往上方提起,藉此,晶粒貼覆膜18從切割帶16完全剝離。Then, the
另外,中央塊體107之上面,係在將中央塊體107往下方下拉之際,必需預先將面積縮小至晶粒貼覆膜18藉由筒夾22之吸引力而從切割帶16所剝離的程度。當中央塊體107之上面的面積較大時,則晶粒貼覆膜18與切割帶16的接觸面積亦變大且兩者的黏著力變大,因此,筒夾22吸引晶粒D的力,係無法將晶粒貼覆膜18從切割帶16剝離。另一方面,在縮小中央塊體107之上面的面積之情況下,係由於強大負載集中施加於晶粒D的狹窄區域(中央部份),因此,在極端情況下,係有晶粒D破裂之虞。In addition, when the upper surface of the
當晶粒變薄時,則與切割帶之黏著力相比,晶粒的剛性變得極低。因此,例如為了拾取20μm的薄晶粒,係必需使施加於晶粒的應力降低(低應力化)。頂出塊體由複數個塊體所構成,在將複數個塊體的所有塊體頂出後,在各塊體依序被下拉的方式中,轉移至外周塊體的下拉之際的晶粒彎曲應力,係取決於切割帶之產生黏著力的面積,亦即取決於塊體寬度所致之懸垂(overhang)的大小(OH)。外側之塊體寬度,係狹窄且藉由增加塊體數量的方式,晶粒保持部分之塊體面積逐漸減少,從而可將晶粒從切割帶剝離。藉此,可降低對晶粒的應力。When the die becomes thinner, the rigidity of the die becomes extremely low compared with the adhesive force of the dicing tape. Therefore, in order to pick up thin crystal grains of 20 μm, for example, it is necessary to reduce (lower stress) the stress applied to the crystal grains. The ejector block is composed of a plurality of blocks. After all the blocks of the plurality of blocks are ejected, each block is sequentially pulled down, and transferred to the crystal grains when the outer block is pulled down. The bending stress depends on the area where the adhesive force is generated by the cutting tape, that is, the overhang (OH) caused by the width of the block. The width of the outer block is narrow and by increasing the number of blocks, the block area of the crystal grain holding part is gradually reduced, so that the crystal grains can be peeled from the dicing tape. Thereby, the stress on the crystal grains can be reduced.
又,在筒夾22將晶粒D往下方按壓的狀態下,當將中央塊體107往下方下拉時,由於筒夾22朝下方移動,因此,有晶粒D碰撞到中央塊體107而破裂之虞。因此,在將中央塊體107往下方下拉之際,係以在此之前將筒夾22提起或至少不使筒夾22朝下方移動的方式,預先進行固定為較理想。Also, when the
為了將中央塊體107往下方下拉,係將圖9所示之頂出軸桿110下拉,藉此,底部基座106藉由第一壓縮線圈彈簧108a的彈簧力而下降。此時,由於第一壓縮線圈彈簧108a之彈簧力比第二壓縮線圈彈簧108b之彈簧力強大,因此,維持中央塊體107的位置。In order to pull the
此時,小齒輪105e藉由底部基座106的驅動部106c而逆時針旋轉,小齒輪105f藉由驅動部106d而順時針旋轉。第一塊體107a,係藉由小齒輪105e,105f之旋轉及第三壓縮線圈彈簧108c之彈簧力被上推。At this time, the
當第一壓縮線圈彈簧108a所致之底部基座106的下降停止時,則中央塊體107藉由第二壓縮線圈彈簧108b的彈簧力而下降。與此並行地,藉由第四壓縮線圈彈簧108d的彈簧力,第二塊體107b被上推。又,藉由第五壓縮線圈彈簧108e的彈簧力,第三塊體107c被上推。When the lowering of the
而且,中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c,係返回到初始狀態的位置。In addition, the
其次,使用圖10,說明關於使用了實施形態之晶粒接合器的半導體裝置之製造方法。圖10,係表示使用了圖1之晶粒接合器的半導體裝置之製造方法的流程圖。Next, referring to FIG. 10, a method of manufacturing a semiconductor device using the die bonder of the embodiment will be described. FIG. 10 is a flowchart showing a method of manufacturing a semiconductor device using the die bonder of FIG. 1.
步驟S11:將保持了切割帶16之晶圓環14儲存於晶圓匣盒(未圖示),並搬入至晶粒接合器10,該切割帶16,係貼附有從晶圓11所分割的晶粒D。控制部8,係將晶圓環14從填充了晶圓環14之晶圓匣盒供給至晶粒供給部1。又,準備基板S,並搬入至晶粒接合器10。控制部8,係以基板供給部6將基板S安裝於基板搬送爪51。Step S11: The
步驟S12:控制部8,係如上述般地剝離晶粒D,並從晶圓11拾取已剝離的晶粒D。如此一來,從切割帶16所剝離之晶粒D,係與晶粒貼覆膜18一起被吸附、保持於筒夾22,並被搬送至下個工程(步驟S13)。而且,當將晶粒D搬送至下個工程的筒夾22返回到晶粒供給部1時,則依照上述之程序,從切割帶16剝離下個晶粒D,之後,依照相同的程序,從切割帶16逐一剝離晶粒D。Step S12: The
步驟S13:控制部8,係將拾取到之晶粒搭載於基板S上或層積於已接合的晶粒上。控制部8,係將從晶圓11拾取到之晶粒D載置於中間平台31,以接合頭41從中間平台31再次拾取晶粒D,並接合於所搬送來的基板S。Step S13: The
步驟S14:控制部8,係以基板搬出部7,從基板搬送爪51取出接合了晶粒D的基板S。從晶粒接合器10搬出基板S。Step S14: The
如上述般,晶粒D,係經由晶粒貼覆膜18被安裝於基板S上,並從晶粒接合器搬出。其後,在引線接合(wire bonding)工程中,經由Au引線與基板S的電極電性連接。接著,在安裝了晶粒D之基板S被搬入至晶粒接合器,第2晶粒D經由晶粒貼覆膜18被層積於安裝在基板S上的晶粒D上,從晶粒接合器被搬出後,在引線接合工程中,經由Au引線與基板S的電極電性連接。第2晶粒D,係在以前述的方法從切割帶16剝離後,被搬送至晶片封裝工程且層積於晶粒D上。在重複上述工程預定次數後,將基板S搬送至壓模工程,並將複數個晶粒D與Au引線以壓模樹脂(未圖示)進行封裝,藉此,層積封裝便完成。As described above, the die D is mounted on the substrate S via the die attach
如上述般,在組裝將複數個晶粒三維地安裝於基板上的層積封裝之際,係為了防止封裝厚度的增加,而要求將晶粒之厚度薄化至20μm以下。另一方面,由於切割帶之厚度,係100μm左右,因此,切割帶之厚度,係亦成為晶粒之厚度的4~5倍。As described above, when assembling a multilayer package in which a plurality of dies are three-dimensionally mounted on a substrate, in order to prevent an increase in the thickness of the package, the thickness of the die is required to be thinned to 20 μm or less. On the other hand, since the thickness of the dicing tape is about 100μm, the thickness of the dicing tape is also 4 to 5 times the thickness of the crystal grain.
當欲使像這樣的薄晶粒從切割帶剝離時,追隨於切割帶的變形之晶粒的變形雖容易變得更加顯著地發生,但在本實施形態的晶粒接合器中,係可降低從切割帶拾取晶粒時之晶粒的損傷。When such a thin die is to be peeled from the dicing tape, the deformation of the die following the deformation of the dicing tape tends to become more significant, but in the die bonder of this embodiment, the system can be reduced Die damage when picking up the die from the dicing tape.
<變形例> 以下,例示若干個關於實施形態之代表性的變形例。在以下之變形例的說明中,對於具有與上述之實施形態中所說明者相同之構成及功能的部分,係可使用與上述之實施形態相同的符號。而且,關於該部分之說明,係可在技術上不矛盾的範圍內,適當地引用上述之實施形態的說明。又,在技術上不矛盾的範圍內,上述之實施形態之一部分及複數個變形例的全部或一部分可適當地組合應用。<Modifications> Hereinafter, some representative modified examples of the embodiment are illustrated. In the description of the following modification examples, parts having the same configuration and function as those described in the above-mentioned embodiment can be given the same reference numerals as in the above-mentioned embodiment. In addition, regarding the description of this part, the description of the above-mentioned embodiment may be appropriately cited within the scope of technically not contradictory. In addition, within the scope of not being technically contradictory, part of the above-mentioned embodiment and all or part of a plurality of modified examples can be appropriately combined and applied.
(第一變形例)
在實施形態中,雖係在將最外周之塊體基座103a往下方下拉時,使用小齒輪105e,105f之旋轉,但亦可使用桿狀或條狀的槓桿。(First modification)
In the embodiment, although the
圖11,係第一變形例之頂出治具的剖面圖。第一變形例之頂出治具101A的主塊體基座105之一對副軸部105c,105d之各自的上部,係設置有槓桿105j,105k。將頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,由於主塊體基座105,係與突起104c抵接,因此,主塊體基座105不會被上推而是底部基座106之驅動部106b,106c被上推,且與其連接之槓桿105j,105k的單側會被上推,因此,經由與副軸部105c,105d連接之槓桿105j,105k的支點,連接至與另一端所連接之最外周之塊體基座103a的驅動部會被下拉。以下,其他塊體亦與實施形態相同地進行動作。Fig. 11 is a cross-sectional view of the ejection jig of the first modification. The upper part of one of the
(第二變形例)
在實施形態中,係在將最外周之塊體基座103a往下方下拉時,雖使用小齒輪105e,105f之旋轉,但亦可使用滾珠螺桿或螺帽鎖。(Second modification)
In the embodiment, when the
圖12,係第二變形例之頂出治具的剖面圖。在底部基座106之底部106a的下方設置螺帽106d,並在驅動部106b,106c的上方形成螺帽106e。頂出軸桿110,係由滾珠螺桿所形成。亦可在將最外周之塊體基座103a往下方下拉時,伴隨著頂出軸桿110之上升,使被連接於前端的螺帽106d之底部基座106的驅動部106b,106c旋轉,且使被設置於與最外周之塊體基座103a連接之驅動部的螺紋部103aa旋轉,並使被設置於底部基座106之驅動部106b,106c的螺帽106e旋轉,藉此,進行下拉。以下,其他塊體亦與實施形態相同地進行動作。Fig. 12 is a cross-sectional view of the ejector jig of the second modification. A
以上,雖根據實施形態及變形例,具體地說明了本發明者所研發的發明,但本發明並不限定於上述實施形態及變形例,無需贅言地可進行各種變更。As mentioned above, although the invention developed by the present inventors has been specifically explained based on the embodiment and the modification, the present invention is not limited to the above-mentioned embodiment and the modification, and various changes can be made without redundancy.
例如,在實施形態中,雖係說明了頂出塊體部由主塊體、第一~第三塊體之四個塊體所構成的例子,但並不限定於此,亦可為複數個塊體。例如,在二個塊體的情況下,係由主塊體與第一塊體所構成,在三個塊體的情況下,係由主塊體與第一塊體與第二塊體所構成,在五個以上塊體的情況下,係在第三塊體與主塊體之間追加塊體而構成。For example, in the embodiment, although an example is described in which the ejector block is composed of the main block and the first to third blocks, it is not limited to this, and it may be a plurality of blocks. Block body. For example, in the case of two blocks, it is composed of the main block and the first block, and in the case of three blocks, it is composed of the main block, the first block and the second block. , In the case of five or more blocks, it is constituted by adding blocks between the third block and the main block.
又,在實施形態中,雖係在將最外周之塊體基座103a往下方下拉時,使用小齒輪105e,105f之旋轉,但亦可藉由被連接於底部基座106之驅動部106b的油壓缸等,將上升改變為下降的動力,使被連接於最外周之塊體基座103a的驅動部下降。In addition, in the embodiment, although the
又,在實施例中,雖係說明了使用晶粒貼覆膜的例子,但亦可設置將接著劑塗佈於基板的預形成部而不使用晶粒貼覆膜。In addition, in the embodiment, although an example of using a die attach film is described, it is also possible to provide an adhesive applied to the preformed portion of the substrate without using the die attach film.
又,在實施例中,雖係說明了關於「以拾取頭來從晶粒供給部拾取晶粒且載置於中間平台,並以接合頭來將被載置於中間平台之晶粒接合於基板」的晶粒接合器,但並不限定於此,可應用於從晶粒供給部拾取晶粒的半導體製造裝置。 例如,亦可應用於「無中間平台與拾取頭而以接合頭來將晶粒供給部之晶粒接合於基板」的晶粒接合器。 又,可應用於「無中間平台,從晶粒供給部拾取晶粒,將晶粒拾取頭旋轉至上面而將晶粒收授至接合頭,以接合頭來接合於基板」的倒裝晶片接合器。 又,可應用於「無中間平台與接合頭,將以拾取頭從晶粒供給部拾取到之晶粒載置於托盤等」的晶粒分選機。In addition, in the embodiment, although it is explained that "the die is picked up from the die supply part with a pickup head and placed on the intermediate platform, and the die placed on the intermediate platform is bonded to the substrate with the bonding head" The die bonder is not limited to this, and can be applied to a semiconductor manufacturing device that picks up die from a die supply part. For example, it can also be applied to a die bonder that uses a bonding head to bond the die of the die supply portion to the substrate without an intermediate platform and a pick-up head. In addition, it can be applied to flip chip bonding of "without an intermediate platform, picking up the die from the die supply part, rotating the die picking head to the top to transfer the die to the bonding head, and using the bonding head to bond to the substrate" Device. In addition, it can be applied to a die sorting machine that "does not have an intermediate platform and a bonding head, and places the die picked up from the die supply part with the pickup head on a tray, etc.".
1:晶粒供給部
11:晶圓
13:頂出單元
101:頂出治具
102:塊體
102a:塊體
102b:塊體
102c:塊體
103a:塊體基座
103b:塊體基座
103c:塊體基座
107:中央塊體
107a:第一塊體
107b:第二塊體
107c:第三塊體
16:切割帶
2:拾取部
21:拾取頭
3:中間平台部
31:中間平台
4:接合部
41:接合頭
8:控制部
10:晶粒接合器
D:晶粒
S:基板1: Die supply part
11: Wafer
13: ejection unit
101: ejection fixture
102:
[圖1]表示實施形態之晶粒接合器的概略上視圖。 [圖2]說明在圖1中從箭頭A方向觀看時,拾取頭及接合頭之動作的圖。 [圖3]表示圖1之晶粒供給部之外觀立體圖的圖。 [圖4]表示圖1之晶粒供給部之主要部的概略剖面圖。 [圖5]說明圖4之頂出治具的上視圖。 [圖6]圖5之頂出治具的A-A剖面圖。 [圖7]說明圖6之頂出治具之動作的圖。 [圖8]說明圖6之頂出治具之動作的圖。 [圖9]說明圖6之頂出治具之動作的圖。 [圖10]表示使用了圖1的晶粒接合器之半導體裝置之製造方法的流程圖。 [圖11]說明第一變形例之頂出治具的剖面圖。 [圖12]說明第二變形例之頂出治具的剖面圖。[Fig. 1] A schematic top view showing the die bonder of the embodiment. [Fig. 2] A diagram explaining the actions of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1. [Fig. [Fig. 3] A diagram showing an external perspective view of the die supply part of Fig. 1. [Fig. [Fig. 4] A schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 1. [Fig. [Figure 5] Illustrates the top view of the ejector fixture of Figure 4; [Fig. 6] A-A sectional view of the ejector jig in Fig. 5. [Fig. 7] A diagram explaining the operation of the ejector jig shown in Fig. 6. [Fig. 8] A diagram explaining the operation of the ejector jig shown in Fig. 6. [Fig. 9] A diagram explaining the operation of the ejector jig shown in Fig. 6. [FIG. 10] A flowchart showing a method of manufacturing a semiconductor device using the die bonder of FIG. 1. [Fig. 11] A cross-sectional view illustrating the ejection jig of the first modification. [Fig. 12] A cross-sectional view illustrating the ejector jig of the second modification.
101:頂出治具 101: ejection fixture
102:主塊體 102: main block
102a:塊體 102a: block
102b:塊體 102b: block
102c:塊體 102c: block
104a:圓頂板 104a: dome board
G:間隙 G: gap
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TWI788059B (en) * | 2020-10-29 | 2022-12-21 | 日商愛立發股份有限公司 | Electronic Component Bonding Device |
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JP7217605B2 (en) | 2023-02-03 |
JP2020047871A (en) | 2020-03-26 |
TWI733164B (en) | 2021-07-11 |
KR102296641B1 (en) | 2021-09-02 |
CN110943008A (en) | 2020-03-31 |
KR20200034600A (en) | 2020-03-31 |
CN110943008B (en) | 2023-07-11 |
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