TW202025334A - Semiconductor manufacturing apparatus push-up jig and method for manufacturing semiconductor device - Google Patents

Semiconductor manufacturing apparatus push-up jig and method for manufacturing semiconductor device Download PDF

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TW202025334A
TW202025334A TW108129072A TW108129072A TW202025334A TW 202025334 A TW202025334 A TW 202025334A TW 108129072 A TW108129072 A TW 108129072A TW 108129072 A TW108129072 A TW 108129072A TW 202025334 A TW202025334 A TW 202025334A
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block
aforementioned
die
ejector
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TWI733164B (en
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名久井勇輝
佐佐匠
齊藤明
岡本樹
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日商捷進科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

Provided is a semiconductor manufacturing apparatus capable of operating a push-up jig with simple composition. The semiconductor manufacturing apparatus includes a push-up unit pushing a die up from the bottom of dicing tape. The push-up unit includes: a block part moved up and down, and including a main block located in the center thereof and a plurality of blocks located outside the main block; a bottom base moving the block part up and down based on the vertical movement of a push-up shaft; and a tool converting the vertical movement of the bottom base into the vertical movement of the outermost one of the plurality of blocks. As the push-up shaft is pushed upwards, the bottom base, the main block and the plurality of blocks are pushed up and then, as the push-up shaft is pushed up further, the bottom base is pushed up to enable the tool to pull the outermost block down.

Description

半導體製造裝置、頂出治具及半導體裝置之製造方法Semiconductor manufacturing device, ejector jig and manufacturing method of semiconductor device

本揭示,係關於半導體製造裝置,例如可應用於具備有頂出單元的半導體製造裝置。The present disclosure relates to semiconductor manufacturing equipment, and can be applied to, for example, semiconductor manufacturing equipment provided with ejector units.

在將被稱為晶粒的半導體晶片搭載於例如配線基板或引線框架等(以下,總稱為基板。)之表面的晶粒接合器中,係重複進行如下述這樣的動作(作業):使用筒夾(collet)等吸附噴嘴,將晶粒搬送至基板上,賦予按壓力並且加熱接合材料,藉此,進行接合。In a die bonder that mounts a semiconductor wafer called a die on the surface of, for example, a wiring board or a lead frame (hereinafter, collectively referred to as a substrate), the following actions (work) are repeated: A collet or the like sucks nozzles, transfers the die to the substrate, applies a pressing force and heats the bonding material, thereby performing bonding.

在晶粒接合器等的半導體製造裝置所致之晶粒接合工程中,係有將從半導體晶圓(以下,稱為晶圓。)所分割之晶粒剝離的剝離工程。在剝離工程中,係藉由頂出銷或塊體,從切割帶背面頂出晶粒,且從被保持於晶粒供給部的切割帶1個1個進行剝離,並使用筒夾等的吸附噴嘴搬送至基板上。Among the die bonding processes performed by semiconductor manufacturing equipment such as die bonders, there is a peeling process for peeling the divided die from a semiconductor wafer (hereinafter referred to as a wafer). In the peeling process, the die is ejected from the back of the dicing tape by ejector pins or blocks, and the dicing tape is peeled one by one from the dicing tape held in the die supply part, and the collet is used for adsorption The nozzle is transported to the substrate.

作為從切割帶拾取晶粒之方法,係例如提出如下述方法:在使切割片吸附於圓板狀之頂出頂蓋(ejector cap)且使半導體晶粒吸附於筒夾的狀態下,使筒夾及周邊、中間、中央的各頂出塊體上升至比頂出頂蓋之表面高的預定高度後,將筒夾之高度保持為此種高度,並按照周圍之頂出塊體、中間之頂出塊體的順序,使頂出塊體下降至比頂出頂蓋之表面更下方的位置,從而自半導體晶粒剝離切割片(例如專利文獻1之先前技術)。 [先前技術文獻] [專利文獻]As a method of picking up the die from the dicing tape, for example, the following method is proposed: in a state where the dicing sheet is adsorbed to a disc-shaped ejector cap and the semiconductor die is adsorbed to the collet, the tube After the clamps and the surrounding, middle, and central ejector blocks rise to a predetermined height higher than the surface of the ejector top cover, the height of the collet is maintained at this height, and the ejector blocks around the The sequence of ejecting the block is such that the ejecting block is lowered to a position below the surface of the ejecting top cover, thereby peeling the dicing sheet from the semiconductor die (for example, the prior art of Patent Document 1). [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2015-179813號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-179813

[本發明所欲解決之課題][Problem to be solved by the present invention]

本揭示之課題,係提供一種能以簡單構成執行頂出治具的半導體製造裝置,該頂出治具,係進行先前技術所記載的拾取方法。 其他課題及新穎之特徵,係可由本說明書的記述及附加圖面明確得知。 [用以解決課題之手段]The subject of the present disclosure is to provide a semiconductor manufacturing device that can implement an ejection jig with a simple configuration, and the ejection jig implements the picking method described in the prior art. Other topics and novel features are clearly known from the description of this manual and the attached drawings. [Means to solve the problem]

如下述般,簡單地說明本揭示中代表性者之概要。 亦即,半導體製造裝置,係具備有:晶圓保持台,保持具有晶粒的切割帶;及頂出單元,將前述晶粒從前述切割帶的下方頂出。前述頂出單元,係具備有:筒狀之圓頂;塊體部,具有位於中央之柱狀的主塊體與位於前述主塊體之外側的環狀之複數個塊體,並進行上下動作;底部基座,基於頂出軸桿之上下動作,使前述塊體部上下動作;及機構,將前述底部基座之上下動作變換成前述複數個塊體之最外側的塊體之上下動作。以下述方式構成:藉由將前述頂出軸桿往上方上推的方式,前述底部基座、前述中央塊體及前述複數個塊體被上推,並藉由將前述頂出軸桿進一步上推的方式,前述底部基座被上堆,且藉由前述機構,前述最外側之塊體被下拉。 [發明之效果]The outline of the representative ones in this disclosure is briefly described as follows. That is, the semiconductor manufacturing apparatus is provided with: a wafer holding table for holding a dicing tape with die; and an ejection unit for ejecting the die from below the dicing tape. The aforementioned ejection unit is provided with: a cylindrical dome; a block part with a columnar main block located in the center and a plurality of ring-shaped blocks located on the outer side of the main block, and moves up and down The bottom base, based on the up and down movement of the ejector shaft, makes the block part move up and down; and a mechanism that transforms the up and down movement of the bottom base into the up and down movement of the outermost block of the plurality of blocks. It is constructed in the following manner: by pushing up the ejection shaft, the bottom base, the central block and the plurality of blocks are pushed up, and the ejection shaft is further pushed up. By pushing, the bottom base is stacked, and the outermost block is pulled down by the mechanism. [Effects of Invention]

根據上述半導體製造裝置,頂出治具之構成變得簡單。According to the above semiconductor manufacturing apparatus, the structure of the ejector jig becomes simple.

以下,參照圖面,說明關於實施形態。但是,在以下的說明中,對同一構成要素附上同一符號,省略重複之說明。另外,圖面,係為了使說明更明確,與實際之形態相比,有針對各部之寬度、厚度、形狀等示意地顯示的情形,但始終為一例,並非限定本發明之解釋。Hereinafter, the embodiment will be described with reference to the drawings. However, in the following description, the same reference numerals are attached to the same components, and repeated descriptions are omitted. In addition, the drawings are shown schematically for the width, thickness, shape, etc. of each part compared with the actual form in order to make the description clearer, but they are always an example and do not limit the interpretation of the present invention.

圖1,係表示實施形態之晶粒接合器之概略的上視圖。圖2,係說明在圖1中從箭頭A方向觀看時,拾取頭及接合頭之動作的圖。Fig. 1 is a top view schematically showing the die bonder of the embodiment. Fig. 2 is a diagram illustrating the actions of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1.

晶粒接合器10,係一般具有:晶粒供給部1,其供給安裝至基板S的晶粒D,該基板S,係印刷了1個或複數個成為最終1封裝的製品區域(以下,稱為封裝區域P。);拾取部2、中間平台部3;接合部4;搬送部5、基板供給部6;基板搬出部7;及控制部8,監視各部之動作並進行控制。Y軸方向為晶粒接合器10的前後方向,X軸方向為左右方向。晶粒供給部1被配置於晶粒接合器10的前側,接合部4被配置於後側。The die bonder 10 generally has: a die supply part 1 which supplies die D mounted on a substrate S, and the substrate S is printed with one or more product areas (hereinafter referred to as the final package) It is the packaging area P.); the pickup part 2, the intermediate platform part 3; the joining part 4; the conveying part 5, the substrate supply part 6; the substrate conveying part 7; and the control part 8, which monitors and controls the actions of each part. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply part 1 is arranged on the front side of the die bonder 10, and the bonding part 4 is arranged on the rear side.

首先,晶粒供給部1,係供給安裝至基板S之封裝區域P的晶粒D。晶粒供給部1,係具有:保持晶圓11的晶圓保持台12;及將晶粒D從晶圓11頂出之以點線所示的頂出單元13。晶粒供給部1,係藉由未圖示之驅動裝置,沿XY軸方向移動,並使拾取之晶粒D移動至頂出單元13的位置。First, the die supply unit 1 supplies the die D mounted on the package area P of the substrate S. The die supply unit 1 has: a wafer holding table 12 holding the wafer 11; and an ejection unit 13 that ejects the die D from the wafer 11 as shown by dotted lines. The die supply unit 1 is moved along the XY axis direction by a driving device not shown, and the picked die D is moved to the position of the ejection unit 13.

拾取部2,係具有:拾取頭21,拾取晶粒D;拾取頭之Y驅動部23,使拾取頭21沿Y軸方向移動;及未圖示之各驅動部,使筒夾22升降、旋轉及沿X軸方向移動。拾取頭21,係具有筒夾22(圖2亦參閱),並從晶粒供給部1拾取晶粒D且載置於中間平台31,該筒夾22,係將所頂出的晶粒D吸附保持於前端。拾取頭21,係具有:未圖示之各驅動部,使筒夾22升降、旋轉及沿X軸方向移動。The pick-up unit 2 has: a pick-up head 21 to pick up the die D; a Y-drive part 23 of the pick-up head to move the pick-up head 21 along the Y-axis direction; and various drive parts not shown to lift and rotate the collet 22 And move along the X axis. The pickup head 21 has a collet 22 (see also FIG. 2), and picks up the die D from the die supply part 1 and places it on the intermediate platform 31. The collet 22 absorbs the ejected die D Keep it at the front end. The pick-up head 21 is equipped with each drive part not shown in figure, and raises and lowers, rotates, and moves the collet 22 along the X-axis direction.

中間平台部3,係具有:中間平台31,暫時地載置晶粒D;及平台辨識攝影機32,用以識別中間平台31上的晶粒D。The intermediate platform portion 3 has: an intermediate platform 31 for temporarily placing the die D; and a platform identification camera 32 for identifying the die D on the intermediate platform 31.

接合部4,係從中間平台31拾取晶粒D,接合於所搬送而來之基板S的封裝區域P上,或以層積於已被接合於基板S的封裝區域P上之晶粒上的形式進行接合。接合部4,係具有:接合頭41,具備有與拾取頭21相同地將晶粒D吸附保持於前端的筒夾42(圖2亦參閱);Y驅動部43,使接合頭41沿Y軸方向移動;及基板辨識攝影機44,拍攝基板S之封裝區域P的位置辨識標記(未圖示),並識別接合位置。 藉由像這樣的構成,接合頭41,係根據平台辨識攝影機32之攝像資料,修正拾取位置・姿勢,並從中間平台31拾取晶粒D,根據基板辨識攝影機44之攝像資料,將晶粒D接合於基板。The bonding part 4 picks up the die D from the intermediate platform 31 and joins it on the package area P of the substrate S being transported, or is laminated on the die that has been bonded to the package area P of the substrate S Form to join. The bonding part 4 has: a bonding head 41, which is provided with a collet 42 (see also FIG. 2) for sucking and holding the die D at the front end in the same manner as the picking head 21; and a Y driving part 43 that makes the bonding head 41 along the Y axis Direction movement; and the substrate recognition camera 44, which photographs the position recognition mark (not shown) of the package area P of the substrate S, and recognizes the bonding position. With such a configuration, the bonding head 41 recognizes the imaging data of the camera 32 based on the platform, corrects the pickup position and posture, and picks up the die D from the intermediate platform 31, and recognizes the die D from the imaging data of the camera 44 based on the substrate. Bonded to the substrate.

搬送部5,係具有:抓住基板S而搬送的基板搬送爪51;及基板S進行移動的搬送道52。基板S,係藉由「以沿著搬送道52所設置之未圖示的滾珠螺桿來驅動被設置於搬送道52之基板搬送爪51之未圖示的螺帽」之方式,進行移動。 藉由像這樣的構成,基板S,係從基板供給部6沿著搬送道52移動至接合位置,並在接合後,移動至基板搬出部7,將基板S收授至基板搬出部7。The conveying unit 5 has: a substrate conveying claw 51 that grips and conveys the substrate S; and a conveyance path 52 that moves the substrate S. The substrate S is moved by "a ball screw (not shown) provided along the transport path 52 drives a nut (not shown) of the substrate transport pawl 51 provided on the transport path 52)". With such a configuration, the substrate S is moved from the substrate supply section 6 to the bonding position along the conveyance path 52, and after bonding, it moves to the substrate unloading section 7 and transfers the substrate S to the substrate unloading section 7.

控制部8,係具備有:記憶體,儲存有程式(軟體),該程式,係監視晶粒接合器10之各部的動作並進行控制;及中央處理裝置(CPU),執行被儲存於記憶體的程式。The control unit 8 is equipped with: a memory, which stores a program (software), which monitors and controls the actions of each part of the die bonder 10; and a central processing unit (CPU), whose execution is stored in the memory Program.

其次,使用圖3及圖4,說明關於晶粒供給部1的構成。圖3,係表示圖1之晶粒供給部之外觀立體圖的圖。圖4,係表示圖1之晶粒供給部之主要部的概略剖面圖。Next, the structure of the crystal grain supply unit 1 will be described using FIGS. 3 and 4. Fig. 3 is a diagram showing an external perspective view of the die supply part of Fig. 1. Fig. 4 is a schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 1.

晶粒供給部1,係具備有:晶圓保持台12,沿水平方向(XY軸方向)移動;及頂出單元13,沿上下方向移動。晶圓保持台12,係具有:擴展環15,保持晶圓環14;及支撐環17,被保持於晶圓環14,水平地定位接著有複數個晶粒D的切割帶16。頂出單元13,係被配置於支撐環17之內側。The die supply unit 1 is provided with: a wafer holding table 12 that moves in the horizontal direction (XY axis direction); and an ejection unit 13 that moves in the vertical direction. The wafer holding table 12 has an expansion ring 15 to hold the wafer ring 14 and a support ring 17 which is held on the wafer ring 14 and horizontally positions the dicing tape 16 with a plurality of die D attached thereto. The ejection unit 13 is arranged inside the support ring 17.

晶粒供給部1,係在晶粒D之頂出時,使保持晶圓環14的擴展環15下降。其結果,保持於晶圓環14之切割帶16被拉長,晶粒D的間隔擴大,藉由上推單元13,從晶粒D下方上推晶粒D,使晶粒D的拾取性提升。另外,將晶粒接著於基板之接著劑,係從液狀變成薄膜狀,將被稱為晶粒貼覆膜(DAF)18之薄膜狀的接著材料貼附於晶圓11與切割帶16之間。在具有晶粒貼覆膜18的晶圓11中,切割,係對晶圓11與晶粒貼覆膜18進行。因此,在剝離工程中,係將晶圓11與晶粒貼覆膜18從切割帶16剝離。另外,在以下中,係無視晶粒貼覆膜18的存在而說明剝離工程。The die supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the die D is ejected. As a result, the dicing tape 16 held in the wafer ring 14 is elongated, and the interval of the die D is enlarged. The push-up unit 13 pushes the die D up from below the die D, so that the pick-up of the die D is improved. . In addition, the adhesive for attaching the die to the substrate is changed from a liquid state to a film, and a film-like adhesive called a die attach film (DAF) 18 is attached to between the wafer 11 and the dicing tape 16. between. In the wafer 11 having the die attach film 18, dicing is performed on the wafer 11 and the die attach film 18. Therefore, in the peeling process, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16. In addition, in the following, the peeling process is described regardless of the existence of the die attach film 18.

其次,使用圖5及圖6,說明關於頂出治具的構成。圖5,係圖4之頂出治具的上視圖。圖6,係圖5之頂出治具的A-A剖面圖。Next, the structure of the ejector jig will be explained using FIGS. 5 and 6. Figure 5 is a top view of the ejector jig shown in Figure 4. Fig. 6 is a cross-sectional view of A-A of the ejector fixture of Fig. 5.

頂出單元13,係一般具有頂出治具101與未圖示之驅動機構,如圖5所示般,頂出治具101,係具有主塊體102、塊體102a~102c、驅動主塊體102及塊體102a~102c的驅動部、保持該些的圓筒狀之圓頂104及蓋住圓頂104的圓頂板104a。The ejection unit 13 generally has an ejection jig 101 and a driving mechanism not shown in the figure. As shown in Figure 5, the ejection jig 101 has a main block 102, blocks 102a~102c, and a main drive block. The drive part of the body 102 and the blocks 102a to 102c, the cylindrical dome 104 that holds these, and the dome plate 104a that covers the dome 104.

圓頂板104a,係具有可進行主塊體102及塊體102a~102c之上下動作的開口,在其周邊部,係設置有複數個吸引口(未圖示)及複數個溝(未圖示)。吸引口及溝之各自的內部,係在使頂出治具101上升且使其上面與切割帶16的背面接觸之際,藉由未圖示的吸引機構而減壓,讓切割帶16之背面密接於圓頂板104a的上面。The dome plate 104a has an opening that allows the main block 102 and the blocks 102a to 102c to move up and down. At its periphery, a plurality of suction ports (not shown) and a plurality of grooves (not shown) are provided . When the inside of the suction port and the groove are raised and the top surface of the ejector tool 101 is brought into contact with the back of the cutting tape 16, the pressure is reduced by a suction mechanism not shown, so that the back of the cutting tape 16 It is closely attached to the upper surface of the dome plate 104a.

在頂出治具101A之中心部,係組裝有將切割帶16往上方頂出的4個塊體102,102a~102c。4個塊體102,102a~102c,係在最外側的環狀之塊體102a的內側配置有環狀之塊體102b,並在更其內側配置有環狀之塊體102c,且在更其內部配置柱狀之主塊體102。At the center of the ejector jig 101A, four blocks 102, 102a to 102c are assembled to eject the cutting tape 16 upward. The four blocks 102, 102a~102c are arranged on the inner side of the outermost ring-shaped block 102a with a ring-shaped block 102b, and on the inner side there is a ring-shaped block 102c, and further A columnar main block 102 is arranged inside.

在圓頂板104a的周邊部與外側的塊體102a之間及4個塊體102,102a~102c之間,係設置有間隙G。該些間隙G之內部,係藉由未圖示的吸引機構而減壓,當切割帶16之背面接觸於頂出治具101的上面時,則切割帶16被吸引至下方,並密接於塊體102,102a~102c的上面。A gap G is provided between the periphery of the dome plate 104a and the outer block 102a and between the four blocks 102, 102a to 102c. The inside of these gaps G is decompressed by a suction mechanism not shown. When the back of the cutting tape 16 contacts the upper surface of the ejection jig 101, the cutting tape 16 is attracted to the bottom and is in close contact with the block. The upper part of body 102, 102a~102c.

與4個塊體102,102a~102c的下面接觸地分別設置有主塊體基座105、圓環等的環狀之塊體基座103a~103c,在主塊體基座105的下方設置有底部基座106。主塊體基座105,係具有:圓柱等的柱狀之主軸部105a,使圓頂104之中央部朝垂直方向延伸;圓盤狀之基座部105b,在主軸部105a之下端,朝水平方向延伸;及一對圓柱狀之副軸部105c,105d,從基座部105b之上方朝上方延伸。在一對副軸部105c,105d之各自的上部,係設置有一對小齒輪105e,105f,在主軸部105a之側面,係設置有突起105g,105h,105i。In contact with the lower surfaces of the four blocks 102, 102a to 102c, a main block base 105, ring-shaped block bases 103a to 103c such as a ring are respectively provided, and below the main block base 105 is provided The bottom base 106. The main block base 105 has a columnar main shaft 105a such as a cylinder, so that the central part of the dome 104 extends in the vertical direction; a disc-shaped base 105b, which faces horizontally below the main shaft 105a And a pair of cylindrical secondary shaft portions 105c, 105d, extending upward from the base portion 105b. A pair of pinion gears 105e, 105f are provided on the upper part of each of the pair of countershaft portions 105c, 105d, and protrusions 105g, 105h, 105i are provided on the side surface of the main shaft portion 105a.

底部基座106,係具有:圓盤狀之底部106a,朝水平方向延伸;及一對柱狀之驅動部106b,106c,從底部106a之上端朝上方延伸。驅動部106b,106c,係具有:溝,與小齒輪105e,105f的齒嚙合。The bottom base 106 has a disc-shaped bottom portion 106a extending in the horizontal direction; and a pair of columnar driving portions 106b, 106c extending upward from the upper end of the bottom portion 106a. The driving parts 106b and 106c have grooves that mesh with the teeth of the pinion gears 105e and 105f.

主塊體102及塊體102a~102c,係分別被螺合固定於主塊體基座103及塊體基座103a~103c的上端,圓頂板104a,係被螺合固定於圓頂104的上端。藉此,主塊體102、塊體102a~102c及圓頂板104a,係可根據類型進行更換。即便為晶粒之平面形狀的大小因晶粒之類型而有所不同的情況下,亦不需依各類型準備頂出治具101。在根據類型不進行更換的情況下,主塊體102、塊體102a~102c及圓頂板104a,係亦可分別與主塊體基座105、塊體基座103a~103c及圓頂104形成一體。The main block 102 and the blocks 102a~102c are screwed and fixed to the upper end of the main block base 103 and the block base 103a~103c, respectively, and the dome plate 104a is screwed and fixed to the upper end of the dome 104 . Thereby, the main block 102, the blocks 102a to 102c, and the dome plate 104a can be replaced according to the type. Even if the size of the planar shape of the die is different depending on the type of the die, it is not necessary to prepare the ejection jig 101 for each type. In the case of not changing according to the type, the main block 102, blocks 102a~102c, and dome plate 104a can also be integrated with the main block base 105, block bases 103a~103c and the dome 104, respectively .

主塊體基座105、塊體基座103a~103c,係被連結於下述之驅動部的零件,並與頂出軸桿110連動地進行上下動作,該頂出軸桿110,係藉由以未圖示之馬達及凸輪等所構成的驅動機構而進行上下動作。 (a)介設於塊體基座103a與塊體基座103b之間的第五壓縮線圈彈簧108e (b)介設於塊體基座103b與塊體基座103c之間的第四壓縮線圈彈簧108d (c)介設於塊體基座103a與主塊體基座105之間的第三壓縮線圈彈簧108c (d)介設於突起部104b與主塊體基座105之間的第二壓縮線圈彈簧108b,該突起部104b被設置於圓頂104的內壁 (e)介設於底部基座106與主塊體基座105之間且彈簧常數比第二壓縮線圈彈簧108d大的第一壓縮線圈彈簧108a (f)介設於塊體基座103a與底部基座106之間的小齒輪105e,105f (g)抵接於頂出軸桿的底部基座106 另外,設置於主塊體基座105之突起105g~105i,係指設成為使塊體102a~102c之上面不高於塊體102之上面的止動件,且亦指不使塊體102b,102c過度下降的止動件。藉此,在初始狀態中,4個塊體102,102a~102c之各自的上面之高度,係成為彼此相等。The main block base 105 and the block bases 103a to 103c are parts connected to the driving part described below and move up and down in conjunction with the ejection shaft 110. The ejection shaft 110 is driven by The vertical movement is performed by a drive mechanism composed of a motor and a cam not shown. (a) The fifth compression coil spring 108e interposed between the block base 103a and the block base 103b (b) The fourth compression coil spring 108d interposed between the block base 103b and the block base 103c (c) The third compression coil spring 108c interposed between the block base 103a and the main block base 105 (d) The second compression coil spring 108b interposed between the protrusion 104b and the main block base 105, and the protrusion 104b is provided on the inner wall of the dome 104 (e) The first compression coil spring 108a interposed between the bottom base 106 and the main block base 105 and having a spring constant greater than that of the second compression coil spring 108d (f) Pinions 105e, 105f interposed between the block base 103a and the bottom base 106 (g) Abutting on the bottom base 106 of the ejector shaft In addition, the protrusions 105g~105i provided on the main block base 105 refer to the stoppers set to make the upper surface of the block 102a~102c not higher than the upper surface of the block 102, and also mean that the block 102b is not made. 102c Stopper for excessive descent. Thereby, in the initial state, the heights of the upper surfaces of the four blocks 102, 102a to 102c are equal to each other.

塊體102a之平面視圖的形狀,係與成為剝離的對象之晶粒D相同的長方形,其尺寸,係稍小於晶粒D之尺寸。在與晶粒D之尺寸相比,塊體102a之尺寸過小的情況下,係即便以塊體102a~102d頂出切割帶16之背面,晶粒D的外周部亦難以從切割帶16剝離。這是因為晶粒D比90μm以下等切割帶16之厚度薄且晶粒D的剛性極低,從而有成為彎曲的狀態而導致晶粒D破裂之虞。另一方面,在塊體102a之尺寸與晶粒D之尺寸相等或為其以上的情況下,係有導致與成為剝離的對象之晶粒D鄰接的其他晶粒D亦同時被提起之虞。因此,在本實施形態中,從晶粒D之外周部起至塊體102a之外周部的較佳距離,係例如設成為0.5mm~0.75mm者。The shape of the block 102a in plan view is the same rectangle as the crystal grain D to be peeled off, and its size is slightly smaller than the size of the crystal grain D. In the case where the size of the block 102a is too small compared with the size of the die D, even if the back of the dicing tape 16 is pushed out by the blocks 102a to 102d, the outer peripheral portion of the die D is difficult to peel off from the dicing tape 16. This is because the crystal grain D is thinner than the thickness of the dicing tape 16 such as 90 μm or less, and the rigidity of the crystal grain D is extremely low, and the crystal grain D may be in a bent state and the crystal grain D may be broken. On the other hand, when the size of the block 102a is equal to or greater than the size of the crystal grain D, there is a possibility that other crystal grains D adjacent to the crystal grain D to be peeled may be lifted up at the same time. Therefore, in this embodiment, the preferable distance from the outer periphery of the die D to the outer periphery of the block 102a is set to be 0.5 mm to 0.75 mm, for example.

配置於塊體102a之內側的平面視圖呈框狀之塊體102b的尺寸,係比塊體102a的尺寸小1mm~3mm左右。又,配置於塊體102b之內側的塊體102c之尺寸,係比塊體102b更小1mm~3mm左右。又,配置於塊體102c之內側的塊體102d之尺寸,係比塊體102c更小1mm~3mm左右。另外,主塊體102之寬度,係比塊體102a~102c的任一寬度(外側的邊與內側的邊之間的長度)大。在本實施形態中,雖係考慮加工的容易度等而將塊體102,102a~102c之形狀設成為長方形,但並不限定於此,例如亦可設成為橢圓形。The size of the block 102b arranged in the inner side of the block 102a in a frame shape in a plan view is about 1 mm to 3 mm smaller than the size of the block 102a. In addition, the size of the block 102c arranged inside the block 102b is about 1 mm to 3 mm smaller than the block 102b. In addition, the size of the block 102d arranged inside the block 102c is about 1 mm to 3 mm smaller than the block 102c. In addition, the width of the main block 102 is greater than any width (the length between the outer side and the inner side) of the blocks 102a to 102c. In this embodiment, the shapes of the blocks 102, 102a to 102c are rectangular in consideration of ease of processing, etc., but it is not limited to this, and for example, it may be elliptical.

上述之4個塊體102,102a~102c之各自的上面之高度,係在初始狀態(塊體102,102a~102c的非動作時)中為彼此相等,又,稍低於頂出治具101之上面周邊部(圓頂板104a)的高度。The heights of the upper surfaces of the four blocks 102, 102a~102c mentioned above are equal to each other in the initial state (when the blocks 102, 102a~102c are not in motion), and are slightly lower than the ejection jig 101 The height of the upper peripheral part (dome plate 104a).

其次,說明如下述般的方法:使用具備有如上述般的塊體102,102a~102c之頂出治具101,將晶粒D從切割帶16剝離。圖7,係說明圖6之頂出治具之動作的圖;圖7(A),係表示初始狀態的剖面圖;圖7(B),係表示所有塊體被頂出之狀態的剖面圖。圖8,係說明圖6之頂出治具之動作的圖;圖8(A),係表示將最外側之塊體下拉後之狀態的剖面圖;圖8(B),係表示將從外側起第2個塊體下拉後之狀態的剖面圖。圖9,係說明圖6之頂出治具之動作的圖,且為將從外側起第3個塊體下拉後之狀態的剖面圖。Next, a method will be described in which the die D is peeled from the dicing tape 16 using the ejector jig 101 provided with the blocks 102, 102a to 102c as described above. Fig. 7 is a diagram illustrating the action of the ejection jig of Fig. 6; Fig. 7(A) is a cross-sectional view showing the initial state; Fig. 7(B) is a cross-sectional view showing the state where all blocks are ejected . Fig. 8 is a diagram illustrating the action of the ejection jig in Fig. 6; Fig. 8(A) is a cross-sectional view showing the state after the outermost block is pulled down; Fig. 8(B) is a view showing the movement from the outside A cross-sectional view of the state after the second block has been pulled down. Fig. 9 is a diagram illustrating the operation of the ejector jig of Fig. 6, and is a cross-sectional view of a state where the third block from the outside has been pulled down.

首先,對被定位在圖3及圖4所示之晶圓保持台12的切割帶16照射紫外線。藉此,由於被塗佈至切割帶16的黏著劑硬化且其黏著性降低,因此,切割帶16與晶粒貼覆膜18之界面剝離變得容易剝離。First, the dicing tape 16 positioned on the wafer holding table 12 shown in FIGS. 3 and 4 is irradiated with ultraviolet rays. Thereby, since the adhesive applied to the dicing tape 16 is hardened and its adhesiveness is reduced, the interface between the dicing tape 16 and the die attach film 18 is easily peeled off.

其次,使晶圓保持台12之擴展環15下降,藉此,將被接著於切割帶16之周邊部的晶圓環14下壓至下方。如此一來,切割帶16接收從其中心部朝向周邊部的強大張力且不鬆弛地拉伸於水平方向。Next, the expansion ring 15 of the wafer holding table 12 is lowered, whereby the wafer ring 14 attached to the peripheral portion of the dicing tape 16 is pressed downward. In this way, the cutting tape 16 receives a strong tension from the center portion toward the peripheral portion and stretches in the horizontal direction without slack.

其次,如圖4所示般,以使頂出治具101之中心部(塊體102,102a~102c)位於成為剝離的對象之一個晶粒D(位於同圖之中央部的晶粒D)之正下方的方式,使晶圓保持台12移動,並且使筒夾22移動至該晶粒D的上方。在被支撐於拾取頭21之筒夾22的底面,係設置有內部被減壓的吸附口(未圖示),且可僅選擇地吸附並保持成為剝離的對象之一個晶粒D。Next, as shown in FIG. 4, the center part of the ejector jig 101 (blocks 102, 102a to 102c) is located at one die D (the die D located in the center of the same figure) that is the target of peeling The method directly below the wafer holding table 12 moves and the collet 22 moves above the die D. The bottom surface of the collet 22 supported by the pickup head 21 is provided with a suction port (not shown) whose inside is decompressed, and only one die D to be peeled off can be selectively suctioned and held.

在此,將主塊體102與主塊體基座105合併稱為中央塊體107,將塊體102a與塊體基座103a合併稱為第一塊體107a,將塊體102b與塊體基座103b合併稱為第二塊體107b,將塊體102c與塊體基座103c合併第三塊體107c。Here, the main block 102 and the main block base 105 are combined as the central block 107, the block 102a and the block base 103a are combined as the first block 107a, and the block 102b and the block base The seat 103b is combined as the second block 107b, and the block 102c and the block base 103c are combined with the third block 107c.

其次,如圖7(A)所示般,將中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c的上面設成為相同高度,並設成為比圓頂板104a的上面稍降低之狀態(初始狀態),且使頂出治具101上升而使其上面接觸於切割帶16的背面,並且對前述之圓頂板104a的吸引口、溝及間隙G的內部進行減壓。藉此,成為剝離的對象之晶粒D的下方之切割帶16會密接於塊體102,102a~102c的上面。又,與該晶粒D鄰接之其他晶粒D的下方之切割帶16會密接於圓頂板104a。另一方面,使筒夾22與頂出治具101之上升大致同時地下降,並使其底面接觸於成為剝離的對象之晶粒D的上面,藉此,吸附晶粒D,並且輕輕地往下方按壓。Next, as shown in FIG. 7(A), the upper surfaces of the central block 107, the first block 107a, the second block 107b, and the third block 107c are set to the same height, and set to be higher than the dome plate 104a. The upper surface is slightly lowered (initial state), and the ejector jig 101 is raised so that the upper surface contacts the back of the cutting tape 16, and the suction port, groove and gap G of the dome plate 104a are decompressed . Thereby, the dicing tape 16 below the crystal grain D which becomes the object of peeling will adhere closely to the upper surface of the block body 102, 102a-102c. In addition, the dicing tape 16 below the other die D adjacent to the die D is in close contact with the dome plate 104a. On the other hand, the collet 22 and the ejection jig 101 are raised and lowered approximately at the same time, and the bottom surface of the collet 22 is brought into contact with the upper surface of the die D to be peeled off, thereby adsorbing the die D and gently Press down.

其次,如圖7(B)所示般,將4個中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c同時往上方頂出,且對切割帶16之背面施加負載,並將晶粒D與切割帶16一起上推。Next, as shown in FIG. 7(B), the four central blocks 107, the first block 107a, the second block 107b and the third block 107c are simultaneously ejected upward, and the back of the cutting tape 16 A load is applied, and the die D is pushed up together with the dicing tape 16.

為了將4個中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c同時往上方頂出,係將圖7(B)所示之頂出軸桿110往上方上推,藉此,將與頂出軸桿110連結的底部基座106上推。藉此,藉由第一壓縮線圈彈簧108a的彈簧力,中央塊體107被上推,該第一壓縮線圈彈簧108a,係介設於底部基座106與中央塊體107之間。又,與此並行地,藉由第三壓縮線圈彈簧108c的彈簧力,第一塊體107a被上推,該第三壓縮線圈彈簧108c,係介設於中央塊體107與第一塊體107a之間。又,與此並行地,藉由第四壓縮線圈彈簧108d的彈簧力,第二塊體107b被上推,該第四壓縮線圈彈簧108d,係介設於第一塊體107a與第二塊體107b之間。又,與此並行地,藉由第五壓縮線圈彈簧108e的彈簧力,第三塊體107c被上推,該第五壓縮線圈彈簧108e,係介設於第二塊體107b與第三塊體107c之間。藉由該些,4個中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c被同時上推。而且,中央塊體107之一部分會與被設置於圓頂104之內壁的突起104c接觸,藉此,中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c的上升停止。In order to eject the four central blocks 107, the first block 107a, the second block 107b and the third block 107c upward at the same time, the ejection shaft 110 shown in Figure 7(B) is moved upward Push, thereby pushing up the bottom base 106 connected to the ejector shaft 110. Thereby, the central block 107 is pushed up by the spring force of the first compression coil spring 108a, and the first compression coil spring 108a is interposed between the bottom base 106 and the central block 107. Also, in parallel with this, the first block 107a is pushed up by the spring force of the third compression coil spring 108c, which is interposed between the central block 107 and the first block 107a between. In parallel with this, the second block 107b is pushed up by the spring force of the fourth compression coil spring 108d. The fourth compression coil spring 108d is interposed between the first block 107a and the second block. Between 107b. Also, in parallel with this, the third block 107c is pushed up by the spring force of the fifth compression coil spring 108e. The fifth compression coil spring 108e is interposed between the second block 107b and the third block. Between 107c. With these, the four central blocks 107, the first block 107a, the second block 107b, and the third block 107c are simultaneously pushed up. Moreover, a part of the central block 107 comes into contact with the protrusion 104c provided on the inner wall of the dome 104, whereby the central block 107, the first block 107a, the second block 107b, and the third block 107c The ascent stops.

中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c之頂出量,係因應晶粒D之尺寸進行增減為較理想。亦即,在晶粒D之尺寸較大的情況下,係由於與晶粒貼覆膜18之接觸面積大,故黏著力亦大,因此,必需增加頂出量。另一方面,在晶粒D之尺寸較小的情況下,係由於與晶粒貼覆膜18之接觸面積小,故黏著力亦小,因此,即便減少頂出量亦容易進行剝離。另外,由於被塗佈於切割帶16之感壓黏著劑,係黏著力因製造商或種類存在著差異,因此,即便為晶粒D之尺寸相同的情況下,亦必需因應感壓黏著劑之黏著力,改變中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c的頂出量。The ejection amount of the central block 107, the first block 107a, the second block 107b, and the third block 107c is preferably increased or decreased according to the size of the die D. That is, when the size of the die D is large, since the contact area with the die attach film 18 is large, the adhesive force is also large, and therefore, the ejection amount must be increased. On the other hand, when the size of the die D is small, since the contact area with the die attach film 18 is small, the adhesive force is also small, so even if the ejection amount is reduced, peeling is easy. In addition, since the pressure-sensitive adhesive applied to the dicing tape 16 has different adhesive strengths depending on the manufacturer or type, even if the size of the die D is the same, it must be adapted to the pressure-sensitive adhesive. The adhesive force changes the ejection amount of the central block 107, the first block 107a, the second block 107b, and the third block 107c.

其次,如圖8(A)所示般,當將被配置於最外側的第一塊體107a往下方下拉時,則開始晶粒貼覆膜18與切割帶16之剝離。此時,將與成為剝離的對象之晶粒D鄰接之其他晶粒D的下方之切割帶16吸引至下方,並使具密接於圓頂板104a,藉此,可防止其他晶粒D的剝離。Next, as shown in FIG. 8(A), when the first block 107a arranged on the outermost side is pulled down, peeling of the die attach film 18 and the dicing tape 16 starts. At this time, the dicing tape 16 below the other die D adjacent to the die D to be peeled is drawn downward, and the tool is closely attached to the dome plate 104a, thereby preventing the peeling of the other die D.

為了將第一塊體107a往下方下拉,係將圖8(A)所示之頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,由於中央塊體107,係與突起104c抵接,因此,中央塊體107不會被上推,小齒輪105e藉由底部基座106的驅動部106b而順時針旋轉,小齒輪105f藉由驅動部106c而逆時針旋轉。第一塊體107a,係具有與小齒輪105e,105f之齒輪嚙合的溝,並藉由小齒輪105e,105f之旋轉被下拉。此時,第一塊體107a之上面,係位於比圓頂板104a之上面高的位置。In order to pull the first block 107a downward, the ejector shaft 110 shown in FIG. 8(A) is further pushed up, whereby the bottom base 106 connected to the ejector shaft 110 is pushed up. At this time, since the central block 107 is in contact with the protrusion 104c, the central block 107 will not be pushed up, the pinion 105e is rotated clockwise by the drive portion 106b of the bottom base 106, and the pinion 105f is borrowed The drive unit 106c rotates counterclockwise. The first block 107a has grooves that mesh with the gears of the pinions 105e and 105f, and is pulled down by the rotation of the pinions 105e and 105f. At this time, the upper surface of the first block 107a is located higher than the upper surface of the dome plate 104a.

在將第一塊體107a往下方下拉之際,係為了促進晶粒D的剝離,而對中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c之間隙G的內部進行減壓,藉此,預先將晶粒D之下方的切割帶16吸引至下方。又,對圓頂板104a之溝的內部進行減壓,預先使與圓頂板104a接觸的切割帶16密接於圓頂板104a的上面。When the first block 107a is pulled down, the gap G between the central block 107, the first block 107a, the second block 107b, and the third block 107c is used to promote the peeling of the crystal grains D. The pressure is reduced inside, and thereby, the dicing tape 16 below the die D is sucked downward in advance. Furthermore, the inside of the groove of the dome plate 104a is reduced in pressure, and the cutting tape 16 in contact with the dome plate 104a is brought into close contact with the upper surface of the dome plate 104a in advance.

其次,如圖8(B)所示般,當將被配置於從最外側起第2個的第二塊體107b往下方下拉時,則晶粒貼覆膜18與切割帶16之剝離往晶粒D的中心方向行進。Next, as shown in FIG. 8(B), when the second block 107b arranged second from the outermost side is pulled down, the die attach film 18 and the dicing tape 16 are peeled off to the crystal The particle D travels in the center direction.

為了將第二塊體107b往下方下拉,係將圖8(B)所示之頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,小齒輪105e藉由底部基座106的驅動部106b而順時針旋轉,小齒輪105f藉由驅動部106c而逆時針旋轉。第一塊體107a,係藉由小齒輪105e,105f之旋轉進一步被下拉。藉此,變得無間隙109b,第一塊體107a抵接於第二塊體107b,且第二塊體107b被下拉。第一塊體107a,係相對於第二塊體107b僅下降間隙109b。此時,第一塊體107a之上面,雖係位於比圓頂板104a之上面低的位置,但第二塊體107b之上面,係位於比圓頂板104a之上面高的位置。In order to pull the second block 107b downward, the ejection shaft 110 shown in FIG. 8(B) is further pushed up, whereby the bottom base 106 connected to the ejection shaft 110 is pushed up. At this time, the pinion gear 105e is rotated clockwise by the drive portion 106b of the bottom base 106, and the pinion gear 105f is rotated counterclockwise by the drive portion 106c. The first block 107a is further pulled down by the rotation of the pinions 105e and 105f. Thereby, there is no gap 109b, the first block 107a abuts on the second block 107b, and the second block 107b is pulled down. The first block 107a is lowered only by the gap 109b relative to the second block 107b. At this time, although the upper surface of the first block 107a is located lower than the upper surface of the dome plate 104a, the upper surface of the second block 107b is located higher than the upper surface of the dome plate 104a.

其次,如圖9所示般,當將被配置於從最外側起第3個的第三塊體107c往下方下拉時,則晶粒貼覆膜18與切割帶16之剝離進一步往晶粒D的中心方向行進。Next, as shown in FIG. 9, when the third block 107c arranged third from the outermost side is pulled down, the die attach film 18 and the dicing tape 16 are peeled further toward the die D Travel in the center direction.

為了將第三塊體107c往下方下拉,係將圖9所示之頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,小齒輪105e藉由底部基座106的驅動部106b而順時針旋轉,小齒輪105f藉由驅動部106c而逆時針旋轉。第一塊體107a,係藉由小齒輪105e,105f之旋轉進一步被下拉,並且第二塊體107b進一步被下拉。藉此,變得無間隙109c,第二塊體107b抵接於第三塊體107c,且第三塊體107c被下拉。第二塊體107b,係相對於第三塊體107c僅下降間隙109c。In order to pull the third block 107c downward, the ejection shaft 110 shown in FIG. 9 is further pushed up, whereby the bottom base 106 connected to the ejection shaft 110 is pushed up. At this time, the pinion gear 105e is rotated clockwise by the drive portion 106b of the bottom base 106, and the pinion gear 105f is rotated counterclockwise by the drive portion 106c. The first block 107a is further pulled down by the rotation of the pinions 105e and 105f, and the second block 107b is further pulled down. Thereby, there is no gap 109c, the second block 107b abuts on the third block 107c, and the third block 107c is pulled down. The second block 107b only lowers the gap 109c relative to the third block 107c.

而且,在第三壓縮線圈彈簧108c完全收縮的時間點,第一塊體107a、第二塊體107b及第三塊體107c的下降停止。此時,第一塊體107a、第二塊體107b及第三塊體107c之上面,係位於比圓頂板104a之上面低的位置。Then, when the third compression coil spring 108c is fully contracted, the lowering of the first block 107a, the second block 107b, and the third block 107c stops. At this time, the upper surfaces of the first block 107a, the second block 107b, and the third block 107c are located lower than the upper surface of the dome plate 104a.

而且,將中央塊體107往下方下拉,並且將筒夾22往上方提起,藉此,晶粒貼覆膜18從切割帶16完全剝離。Then, the central block 107 is pulled down and the collet 22 is lifted up, whereby the die attach film 18 is completely peeled off from the dicing tape 16.

另外,中央塊體107之上面,係在將中央塊體107往下方下拉之際,必需預先將面積縮小至晶粒貼覆膜18藉由筒夾22之吸引力而從切割帶16所剝離的程度。當中央塊體107之上面的面積較大時,則晶粒貼覆膜18與切割帶16的接觸面積亦變大且兩者的黏著力變大,因此,筒夾22吸引晶粒D的力,係無法將晶粒貼覆膜18從切割帶16剝離。另一方面,在縮小中央塊體107之上面的面積之情況下,係由於強大負載集中施加於晶粒D的狹窄區域(中央部份),因此,在極端情況下,係有晶粒D破裂之虞。In addition, when the upper surface of the central block 107 is pulled down, the area must be reduced in advance to the die attach film 18 peeled from the dicing tape 16 by the suction force of the collet 22 degree. When the area of the upper surface of the central block 107 is larger, the contact area between the die attach film 18 and the dicing tape 16 also becomes larger and the adhesion between the two becomes larger. Therefore, the collet 22 attracts the die D , It is impossible to peel the die attach film 18 from the dicing tape 16. On the other hand, when the area of the upper surface of the central block 107 is reduced, the strong load is concentrated on the narrow area (central part) of the crystal grain D. Therefore, in extreme cases, the crystal grain D is broken. The fear.

當晶粒變薄時,則與切割帶之黏著力相比,晶粒的剛性變得極低。因此,例如為了拾取20μm的薄晶粒,係必需使施加於晶粒的應力降低(低應力化)。頂出塊體由複數個塊體所構成,在將複數個塊體的所有塊體頂出後,在各塊體依序被下拉的方式中,轉移至外周塊體的下拉之際的晶粒彎曲應力,係取決於切割帶之產生黏著力的面積,亦即取決於塊體寬度所致之懸垂(overhang)的大小(OH)。外側之塊體寬度,係狹窄且藉由增加塊體數量的方式,晶粒保持部分之塊體面積逐漸減少,從而可將晶粒從切割帶剝離。藉此,可降低對晶粒的應力。When the die becomes thinner, the rigidity of the die becomes extremely low compared with the adhesive force of the dicing tape. Therefore, in order to pick up thin crystal grains of 20 μm, for example, it is necessary to reduce (lower stress) the stress applied to the crystal grains. The ejector block is composed of a plurality of blocks. After all the blocks of the plurality of blocks are ejected, each block is sequentially pulled down, and transferred to the crystal grains when the outer block is pulled down. The bending stress depends on the area where the adhesive force is generated by the cutting tape, that is, the overhang (OH) caused by the width of the block. The width of the outer block is narrow and by increasing the number of blocks, the block area of the crystal grain holding part is gradually reduced, so that the crystal grains can be peeled from the dicing tape. Thereby, the stress on the crystal grains can be reduced.

又,在筒夾22將晶粒D往下方按壓的狀態下,當將中央塊體107往下方下拉時,由於筒夾22朝下方移動,因此,有晶粒D碰撞到中央塊體107而破裂之虞。因此,在將中央塊體107往下方下拉之際,係以在此之前將筒夾22提起或至少不使筒夾22朝下方移動的方式,預先進行固定為較理想。Also, when the central block 107 is pulled down while the collet 22 is pressing the die D downward, the collet 22 moves downward, so that the die D collides with the central block 107 and breaks. The fear. Therefore, when the central block 107 is pulled down, it is preferable to fix the collet 22 in advance so that the collet 22 is lifted or at least not moved downward.

為了將中央塊體107往下方下拉,係將圖9所示之頂出軸桿110下拉,藉此,底部基座106藉由第一壓縮線圈彈簧108a的彈簧力而下降。此時,由於第一壓縮線圈彈簧108a之彈簧力比第二壓縮線圈彈簧108b之彈簧力強大,因此,維持中央塊體107的位置。In order to pull the central block 107 downward, the ejector shaft 110 shown in FIG. 9 is pulled down, whereby the bottom base 106 is lowered by the spring force of the first compression coil spring 108a. At this time, since the spring force of the first compression coil spring 108a is stronger than the spring force of the second compression coil spring 108b, the position of the central block 107 is maintained.

此時,小齒輪105e藉由底部基座106的驅動部106c而逆時針旋轉,小齒輪105f藉由驅動部106d而順時針旋轉。第一塊體107a,係藉由小齒輪105e,105f之旋轉及第三壓縮線圈彈簧108c之彈簧力被上推。At this time, the pinion gear 105e is rotated counterclockwise by the drive portion 106c of the bottom base 106, and the pinion gear 105f is rotated clockwise by the drive portion 106d. The first block 107a is pushed up by the rotation of the pinions 105e, 105f and the spring force of the third compression coil spring 108c.

當第一壓縮線圈彈簧108a所致之底部基座106的下降停止時,則中央塊體107藉由第二壓縮線圈彈簧108b的彈簧力而下降。與此並行地,藉由第四壓縮線圈彈簧108d的彈簧力,第二塊體107b被上推。又,藉由第五壓縮線圈彈簧108e的彈簧力,第三塊體107c被上推。When the lowering of the bottom base 106 caused by the first compression coil spring 108a stops, the central block 107 is lowered by the spring force of the second compression coil spring 108b. In parallel with this, the second block 107b is pushed up by the spring force of the fourth compression coil spring 108d. In addition, the third block 107c is pushed up by the spring force of the fifth compression coil spring 108e.

而且,中央塊體107、第一塊體107a、第二塊體107b及第三塊體107c,係返回到初始狀態的位置。In addition, the central block 107, the first block 107a, the second block 107b, and the third block 107c are returned to the initial state.

其次,使用圖10,說明關於使用了實施形態之晶粒接合器的半導體裝置之製造方法。圖10,係表示使用了圖1之晶粒接合器的半導體裝置之製造方法的流程圖。Next, referring to FIG. 10, a method of manufacturing a semiconductor device using the die bonder of the embodiment will be described. FIG. 10 is a flowchart showing a method of manufacturing a semiconductor device using the die bonder of FIG. 1.

步驟S11:將保持了切割帶16之晶圓環14儲存於晶圓匣盒(未圖示),並搬入至晶粒接合器10,該切割帶16,係貼附有從晶圓11所分割的晶粒D。控制部8,係將晶圓環14從填充了晶圓環14之晶圓匣盒供給至晶粒供給部1。又,準備基板S,並搬入至晶粒接合器10。控制部8,係以基板供給部6將基板S安裝於基板搬送爪51。Step S11: The wafer ring 14 holding the dicing tape 16 is stored in a cassette (not shown) and carried into the die bonder 10. The dicing tape 16 is attached to the wafer 11的晶粒 D. The control unit 8 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply unit 1. In addition, the substrate S is prepared and carried into the die bonder 10. The control unit 8 mounts the substrate S on the substrate transport claw 51 by the substrate supply unit 6.

步驟S12:控制部8,係如上述般地剝離晶粒D,並從晶圓11拾取已剝離的晶粒D。如此一來,從切割帶16所剝離之晶粒D,係與晶粒貼覆膜18一起被吸附、保持於筒夾22,並被搬送至下個工程(步驟S13)。而且,當將晶粒D搬送至下個工程的筒夾22返回到晶粒供給部1時,則依照上述之程序,從切割帶16剝離下個晶粒D,之後,依照相同的程序,從切割帶16逐一剝離晶粒D。Step S12: The control unit 8 peels the die D as described above, and picks up the peeled die D from the wafer 11. In this way, the die D peeled from the dicing tape 16 is sucked and held by the collet 22 together with the die attach film 18, and is transported to the next process (step S13). Moreover, when the collet 22 that transports the die D to the next process returns to the die supply unit 1, the next die D is peeled off from the dicing tape 16 according to the above-mentioned procedure, and thereafter, in accordance with the same procedure, The dicing tape 16 peels off the die D one by one.

步驟S13:控制部8,係將拾取到之晶粒搭載於基板S上或層積於已接合的晶粒上。控制部8,係將從晶圓11拾取到之晶粒D載置於中間平台31,以接合頭41從中間平台31再次拾取晶粒D,並接合於所搬送來的基板S。Step S13: The control unit 8 mounts the picked-up die on the substrate S or stacks it on the bonded die. The control unit 8 places the die D picked up from the wafer 11 on the intermediate platform 31, and the die D is picked up again from the intermediate platform 31 by the bonding head 41 and bonded to the transferred substrate S.

步驟S14:控制部8,係以基板搬出部7,從基板搬送爪51取出接合了晶粒D的基板S。從晶粒接合器10搬出基板S。Step S14: The control unit 8 takes out the substrate S to which the die D is bonded from the substrate conveying claw 51 using the substrate conveying unit 7. The substrate S is carried out from the die bonder 10.

如上述般,晶粒D,係經由晶粒貼覆膜18被安裝於基板S上,並從晶粒接合器搬出。其後,在引線接合(wire bonding)工程中,經由Au引線與基板S的電極電性連接。接著,在安裝了晶粒D之基板S被搬入至晶粒接合器,第2晶粒D經由晶粒貼覆膜18被層積於安裝在基板S上的晶粒D上,從晶粒接合器被搬出後,在引線接合工程中,經由Au引線與基板S的電極電性連接。第2晶粒D,係在以前述的方法從切割帶16剝離後,被搬送至晶片封裝工程且層積於晶粒D上。在重複上述工程預定次數後,將基板S搬送至壓模工程,並將複數個晶粒D與Au引線以壓模樹脂(未圖示)進行封裝,藉此,層積封裝便完成。As described above, the die D is mounted on the substrate S via the die attach film 18 and carried out from the die bonder. Thereafter, in a wire bonding process, the electrodes are electrically connected to the electrodes of the substrate S via Au wires. Next, the substrate S on which the die D is mounted is carried into the die bonder, and the second die D is laminated on the die D mounted on the substrate S via the die attach film 18, and the die is bonded from the die. After the device is carried out, in the wire bonding process, it is electrically connected to the electrode of the substrate S via the Au wire. The second die D is separated from the dicing tape 16 by the above-mentioned method, and then transferred to the chip packaging process and laminated on the die D. After repeating the above-mentioned process a predetermined number of times, the substrate S is transported to the compression molding process, and a plurality of die D and Au leads are packaged with a compression molding resin (not shown), thereby completing the laminated package.

如上述般,在組裝將複數個晶粒三維地安裝於基板上的層積封裝之際,係為了防止封裝厚度的增加,而要求將晶粒之厚度薄化至20μm以下。另一方面,由於切割帶之厚度,係100μm左右,因此,切割帶之厚度,係亦成為晶粒之厚度的4~5倍。As described above, when assembling a multilayer package in which a plurality of dies are three-dimensionally mounted on a substrate, in order to prevent an increase in the thickness of the package, the thickness of the die is required to be thinned to 20 μm or less. On the other hand, since the thickness of the dicing tape is about 100μm, the thickness of the dicing tape is also 4 to 5 times the thickness of the crystal grain.

當欲使像這樣的薄晶粒從切割帶剝離時,追隨於切割帶的變形之晶粒的變形雖容易變得更加顯著地發生,但在本實施形態的晶粒接合器中,係可降低從切割帶拾取晶粒時之晶粒的損傷。When such a thin die is to be peeled from the dicing tape, the deformation of the die following the deformation of the dicing tape tends to become more significant, but in the die bonder of this embodiment, the system can be reduced Die damage when picking up the die from the dicing tape.

<變形例> 以下,例示若干個關於實施形態之代表性的變形例。在以下之變形例的說明中,對於具有與上述之實施形態中所說明者相同之構成及功能的部分,係可使用與上述之實施形態相同的符號。而且,關於該部分之說明,係可在技術上不矛盾的範圍內,適當地引用上述之實施形態的說明。又,在技術上不矛盾的範圍內,上述之實施形態之一部分及複數個變形例的全部或一部分可適當地組合應用。<Modifications> Hereinafter, some representative modified examples of the embodiment are illustrated. In the description of the following modification examples, parts having the same configuration and function as those described in the above-mentioned embodiment can be given the same reference numerals as in the above-mentioned embodiment. In addition, regarding the description of this part, the description of the above-mentioned embodiment may be appropriately cited within the scope of technically not contradictory. In addition, within the scope of not being technically contradictory, part of the above-mentioned embodiment and all or part of a plurality of modified examples can be appropriately combined and applied.

(第一變形例) 在實施形態中,雖係在將最外周之塊體基座103a往下方下拉時,使用小齒輪105e,105f之旋轉,但亦可使用桿狀或條狀的槓桿。(First modification) In the embodiment, although the pinion gear 105e, 105f is used to rotate when the outermost block base 103a is pulled downward, a rod-shaped or bar-shaped lever may also be used.

圖11,係第一變形例之頂出治具的剖面圖。第一變形例之頂出治具101A的主塊體基座105之一對副軸部105c,105d之各自的上部,係設置有槓桿105j,105k。將頂出軸桿110進一步上推,藉此,與頂出軸桿110連結的底部基座106被上推。此時,由於主塊體基座105,係與突起104c抵接,因此,主塊體基座105不會被上推而是底部基座106之驅動部106b,106c被上推,且與其連接之槓桿105j,105k的單側會被上推,因此,經由與副軸部105c,105d連接之槓桿105j,105k的支點,連接至與另一端所連接之最外周之塊體基座103a的驅動部會被下拉。以下,其他塊體亦與實施形態相同地進行動作。Fig. 11 is a cross-sectional view of the ejection jig of the first modification. The upper part of one of the main block base 105 of the ejection jig 101A of the first modification example and the auxiliary shaft portions 105c, 105d are provided with levers 105j, 105k. The ejector shaft 110 is pushed up further, whereby the bottom base 106 connected with the ejector shaft 110 is pushed up. At this time, since the main block base 105 is in contact with the protrusion 104c, the main block base 105 will not be pushed up but the driving parts 106b, 106c of the bottom base 106 will be pushed up and connected to it One side of the lever 105j, 105k will be pushed up. Therefore, the fulcrum of the lever 105j, 105k connected to the countershaft 105c, 105d is connected to the drive of the outermost block base 103a connected to the other end Ministry will be pulled down. Hereinafter, the other blocks also operate in the same manner as the embodiment.

(第二變形例) 在實施形態中,係在將最外周之塊體基座103a往下方下拉時,雖使用小齒輪105e,105f之旋轉,但亦可使用滾珠螺桿或螺帽鎖。(Second modification) In the embodiment, when the outermost block base 103a is pulled down, although the rotation of the pinions 105e and 105f is used, a ball screw or a nut lock can also be used.

圖12,係第二變形例之頂出治具的剖面圖。在底部基座106之底部106a的下方設置螺帽106d,並在驅動部106b,106c的上方形成螺帽106e。頂出軸桿110,係由滾珠螺桿所形成。亦可在將最外周之塊體基座103a往下方下拉時,伴隨著頂出軸桿110之上升,使被連接於前端的螺帽106d之底部基座106的驅動部106b,106c旋轉,且使被設置於與最外周之塊體基座103a連接之驅動部的螺紋部103aa旋轉,並使被設置於底部基座106之驅動部106b,106c的螺帽106e旋轉,藉此,進行下拉。以下,其他塊體亦與實施形態相同地進行動作。Fig. 12 is a cross-sectional view of the ejector jig of the second modification. A nut 106d is provided below the bottom 106a of the bottom base 106, and a nut 106e is formed above the driving parts 106b and 106c. The ejector shaft 110 is formed by a ball screw. When the outermost block base 103a is pulled down, the driving part 106b, 106c of the bottom base 106 connected to the nut 106d at the front end can be rotated along with the rise of the ejector shaft 110, and The screw part 103aa provided in the driving part connected to the outermost block base 103a is rotated, and the nut 106e provided in the driving parts 106b, 106c of the bottom base 106 is rotated, thereby pulling down. Hereinafter, the other blocks also operate in the same manner as the embodiment.

以上,雖根據實施形態及變形例,具體地說明了本發明者所研發的發明,但本發明並不限定於上述實施形態及變形例,無需贅言地可進行各種變更。As mentioned above, although the invention developed by the present inventors has been specifically explained based on the embodiment and the modification, the present invention is not limited to the above-mentioned embodiment and the modification, and various changes can be made without redundancy.

例如,在實施形態中,雖係說明了頂出塊體部由主塊體、第一~第三塊體之四個塊體所構成的例子,但並不限定於此,亦可為複數個塊體。例如,在二個塊體的情況下,係由主塊體與第一塊體所構成,在三個塊體的情況下,係由主塊體與第一塊體與第二塊體所構成,在五個以上塊體的情況下,係在第三塊體與主塊體之間追加塊體而構成。For example, in the embodiment, although an example is described in which the ejector block is composed of the main block and the first to third blocks, it is not limited to this, and it may be a plurality of blocks. Block body. For example, in the case of two blocks, it is composed of the main block and the first block, and in the case of three blocks, it is composed of the main block, the first block and the second block. , In the case of five or more blocks, it is constituted by adding blocks between the third block and the main block.

又,在實施形態中,雖係在將最外周之塊體基座103a往下方下拉時,使用小齒輪105e,105f之旋轉,但亦可藉由被連接於底部基座106之驅動部106b的油壓缸等,將上升改變為下降的動力,使被連接於最外周之塊體基座103a的驅動部下降。In addition, in the embodiment, although the outermost block base 103a is pulled down, the pinion gear 105e, 105f is used to rotate, but it can also be connected to the drive part 106b of the bottom base 106 The hydraulic cylinder or the like changes the power of raising to lowering, and lowers the driving part connected to the outermost block base 103a.

又,在實施例中,雖係說明了使用晶粒貼覆膜的例子,但亦可設置將接著劑塗佈於基板的預形成部而不使用晶粒貼覆膜。In addition, in the embodiment, although an example of using a die attach film is described, it is also possible to provide an adhesive applied to the preformed portion of the substrate without using the die attach film.

又,在實施例中,雖係說明了關於「以拾取頭來從晶粒供給部拾取晶粒且載置於中間平台,並以接合頭來將被載置於中間平台之晶粒接合於基板」的晶粒接合器,但並不限定於此,可應用於從晶粒供給部拾取晶粒的半導體製造裝置。 例如,亦可應用於「無中間平台與拾取頭而以接合頭來將晶粒供給部之晶粒接合於基板」的晶粒接合器。 又,可應用於「無中間平台,從晶粒供給部拾取晶粒,將晶粒拾取頭旋轉至上面而將晶粒收授至接合頭,以接合頭來接合於基板」的倒裝晶片接合器。 又,可應用於「無中間平台與接合頭,將以拾取頭從晶粒供給部拾取到之晶粒載置於托盤等」的晶粒分選機。In addition, in the embodiment, although it is explained that "the die is picked up from the die supply part with a pickup head and placed on the intermediate platform, and the die placed on the intermediate platform is bonded to the substrate with the bonding head" The die bonder is not limited to this, and can be applied to a semiconductor manufacturing device that picks up die from a die supply part. For example, it can also be applied to a die bonder that uses a bonding head to bond the die of the die supply portion to the substrate without an intermediate platform and a pick-up head. In addition, it can be applied to flip chip bonding of "without an intermediate platform, picking up the die from the die supply part, rotating the die picking head to the top to transfer the die to the bonding head, and using the bonding head to bond to the substrate" Device. In addition, it can be applied to a die sorting machine that "does not have an intermediate platform and a bonding head, and places the die picked up from the die supply part with the pickup head on a tray, etc.".

1:晶粒供給部 11:晶圓 13:頂出單元 101:頂出治具 102:塊體 102a:塊體 102b:塊體 102c:塊體 103a:塊體基座 103b:塊體基座 103c:塊體基座 107:中央塊體 107a:第一塊體 107b:第二塊體 107c:第三塊體 16:切割帶 2:拾取部 21:拾取頭 3:中間平台部 31:中間平台 4:接合部 41:接合頭 8:控制部 10:晶粒接合器 D:晶粒 S:基板1: Die supply part 11: Wafer 13: ejection unit 101: ejection fixture 102: Block 102a: block 102b: block 102c: block 103a: Block base 103b: Block base 103c: Block base 107: Central Block 107a: The first block 107b: The second block 107c: The third block 16: cutting tape 2: Pickup 21: Pickup head 3: Intermediate platform 31: Intermediate platform 4: Joint 41: Joint head 8: Control Department 10: Die Bonder D: grain S: substrate

[圖1]表示實施形態之晶粒接合器的概略上視圖。 [圖2]說明在圖1中從箭頭A方向觀看時,拾取頭及接合頭之動作的圖。 [圖3]表示圖1之晶粒供給部之外觀立體圖的圖。 [圖4]表示圖1之晶粒供給部之主要部的概略剖面圖。 [圖5]說明圖4之頂出治具的上視圖。 [圖6]圖5之頂出治具的A-A剖面圖。 [圖7]說明圖6之頂出治具之動作的圖。 [圖8]說明圖6之頂出治具之動作的圖。 [圖9]說明圖6之頂出治具之動作的圖。 [圖10]表示使用了圖1的晶粒接合器之半導體裝置之製造方法的流程圖。 [圖11]說明第一變形例之頂出治具的剖面圖。 [圖12]說明第二變形例之頂出治具的剖面圖。[Fig. 1] A schematic top view showing the die bonder of the embodiment. [Fig. 2] A diagram explaining the actions of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1. [Fig. [Fig. 3] A diagram showing an external perspective view of the die supply part of Fig. 1. [Fig. [Fig. 4] A schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 1. [Fig. [Figure 5] Illustrates the top view of the ejector fixture of Figure 4; [Fig. 6] A-A sectional view of the ejector jig in Fig. 5. [Fig. 7] A diagram explaining the operation of the ejector jig shown in Fig. 6. [Fig. 8] A diagram explaining the operation of the ejector jig shown in Fig. 6. [Fig. 9] A diagram explaining the operation of the ejector jig shown in Fig. 6. [FIG. 10] A flowchart showing a method of manufacturing a semiconductor device using the die bonder of FIG. 1. [Fig. 11] A cross-sectional view illustrating the ejection jig of the first modification. [Fig. 12] A cross-sectional view illustrating the ejector jig of the second modification.

101:頂出治具 101: ejection fixture

102:主塊體 102: main block

102a:塊體 102a: block

102b:塊體 102b: block

102c:塊體 102c: block

104a:圓頂板 104a: dome board

G:間隙 G: gap

Claims (23)

一種半導體製造裝置,其特徵係,具備有: 晶圓保持台,保持具有晶粒的切割帶;及 頂出單元,將前述晶粒從前述切割帶的下方頂出, 前述頂出單元,係具備有: 筒狀之圓頂; 塊體部,具有位於中央之柱狀的主塊體與位於前述主塊體之外側的環狀之複數個塊體,並進行上下動作; 底部基座,基於頂出軸桿之上下動作,使前述塊體部上下動作;及 機構,將前述底部基座之上下動作變換成前述複數個塊體之最外側的塊體之上下動作, 且以下述方式構成: 藉由將前述頂出軸桿往上方上推的方式,前述底部基座、前述中央塊體及前述複數個塊體被上推, 藉由將前述頂出軸桿進一步上推的方式,前述底部基座被上堆,並藉由前述機構,前述最外側之塊體被下拉。A semiconductor manufacturing device characterized by: Wafer holding table, holding dicing tape with dies; and The ejection unit ejects the aforementioned crystal grains from below the aforementioned dicing tape, The aforementioned ejector unit has: Cylindrical dome The block part has a columnar main block located in the center and a plurality of ring-shaped blocks located on the outer side of the aforementioned main block, and moves up and down; The bottom base, based on the up and down movement of the ejector shaft, causes the aforementioned block to move up and down; and The mechanism transforms the up and down movement of the bottom base into the up and down movement of the outermost block of the plurality of blocks, And is constructed in the following way: By pushing the ejector shaft upward, the bottom base, the central block and the plurality of blocks are pushed up, By further pushing the ejector shaft up, the bottom base is stacked, and the outermost block is pulled down by the mechanism. 如申請專利範圍第1項之半導體製造裝置,其中, 前述機構,係齒輪。For example, the semiconductor manufacturing device of item 1 in the scope of patent application, in which, The aforementioned mechanism is a gear. 如申請專利範圍第1項之半導體製造裝置,其中, 前述機構,係條狀(bar-shaped)的槓桿。For example, the semiconductor manufacturing device of item 1 in the scope of patent application, in which, The aforementioned mechanism is a bar-shaped lever. 如申請專利範圍第1項之半導體製造裝置,其中, 前述複數個塊體,係具有各自的外側之塊體與內側之塊體的上方抵接之部分,且藉由各自的外側之塊體被下拉的方式而下拉。For example, the semiconductor manufacturing device of item 1 in the scope of patent application, in which, The above-mentioned plural blocks have respective upper abutting parts of the outer block and the inner block, and are pulled down by the respective outer blocks being pulled down. 如申請專利範圍第4項之半導體製造裝置,其中, 前述機構,係被安裝於前述中央塊體,並被配置於前述底部基座與前述最外側的塊體之間。For example, the semiconductor manufacturing device of item 4 of the scope of patent application, in which, The aforementioned mechanism is installed on the central block and arranged between the bottom base and the outermost block. 如申請專利範圍第1項之半導體製造裝置,其中, 前述圓頂,係在其內壁具有第一突起, 前述頂出單元,係更具備有: 第一壓縮線圈彈簧,介設於前述底部基座與前述中央塊體之間; 第二壓縮線圈彈簧,介設於前述中央塊體與前述第一突起之間; 第三壓縮線圈彈簧,介設於前述中央塊體與前述最外側的塊體之間;及 第四壓縮線圈彈簧,介設於前述最外側的塊體與和前述最外側的塊體相鄰之內側的塊體之間。For example, the semiconductor manufacturing device of item 1 in the scope of patent application, in which, The aforementioned dome has a first protrusion on its inner wall, The aforementioned ejector units are further equipped with: The first compression coil spring is interposed between the bottom base and the central block; The second compression coil spring is interposed between the central block and the first protrusion; The third compression coil spring is interposed between the central block and the outermost block; and The fourth compression coil spring is interposed between the outermost block and the inner block adjacent to the outermost block. 如申請專利範圍第1項之半導體製造裝置,其中, 前述圓頂,係在其內壁具有第二突起, 藉由前述中央塊體與前述第二突起抵接的方式,前述中央塊體及複數個塊體的上升停止。For example, the semiconductor manufacturing device of item 1 in the scope of patent application, in which, The aforementioned dome has a second protrusion on its inner wall, By the way the central block abuts against the second protrusion, the ascent of the central block and the plurality of blocks stops. 如申請專利範圍第1~3項中任一項之半導體製造裝置,其中, 前述晶粒,係更在前述晶粒與前述切割帶之間具備有晶粒貼覆膜。For example, the semiconductor manufacturing device of any one of items 1 to 3 in the scope of patent application, where: The die is further provided with a die attach film between the die and the dicing tape. 如申請專利範圍第1~3項中任一項之半導體製造裝置,其中,更具備有: 拾取頭,裝設有吸附前述晶粒的筒夾。For example, the semiconductor manufacturing device of any one of items 1 to 3 in the scope of patent application, which has: The pickup head is equipped with a collet for adsorbing the aforementioned crystal grains. 如申請專利範圍第9項之半導體製造裝置,其中,更具備有: 中間平台,載置有以前述拾取頭所拾取到的晶粒;及 接合頭,將被載置於前述中間平台之晶粒接合於基板或已接合的晶粒上。For example, the semiconductor manufacturing device of item 9 of the scope of patent application, which has: The intermediate platform is loaded with the crystal grains picked up by the aforementioned pickup head; and The bonding head bonds the die placed on the aforementioned intermediate platform to the substrate or the bonded die. 如申請專利範圍第1~3項中任一項之半導體製造裝置,其中,更具備有: 接合頭,裝設有吸附前述晶粒的筒夾。For example, the semiconductor manufacturing device of any one of items 1 to 3 in the scope of patent application, which has: The bonding head is equipped with a collet for adsorbing the aforementioned crystal grains. 一種頂出治具,被使用於將晶粒從切割帶的下方頂出之頂出單元,該頂出單元,其特徵係,具備有: 圓管狀之圓頂,在內壁具有第一突起; 圓頂板,具有開口,並被設置於前述圓頂的上面; 塊體部,具有第一塊體與位於前述第一塊體之內側的中央塊體,並在前述開口內進行上下動作; 底部基座,基於頂出軸桿之上下動作,使前述塊體部上下動作; 第一壓縮線圈彈簧,介設於前述底部基座與前述中央塊體之間; 第二壓縮線圈彈簧,介設於前述中央塊體與前述第一突起之間; 第三壓縮線圈彈簧,介設於前述中央塊體與前述第一塊體之間;及 機構,將前述底部基座之上方向的移動變換成前述第一塊體之下方向的移動, 將前述頂出軸桿往上方上推,藉此,前述底部基座被上推,並藉由前述第一壓縮線圈彈簧的彈簧力,將前述中央塊體上推,並且藉由前述第三壓縮線圈彈簧的彈簧力,前述第一塊體被上推, 藉由將前述頂出軸桿進一步上推的方式,前述底部基座被上堆,前述機構,係被構成為前述第一塊體被下拉。An ejector jig, which is used in an ejector unit that ejects the die from below the dicing tape. The ejector unit is characterized by: A round dome with a first protrusion on the inner wall; The dome plate has an opening and is set on the top of the aforementioned dome; The block part has a first block and a central block located inside the first block, and moves up and down in the opening; The bottom base, based on the up and down movement of the ejector shaft, causes the aforementioned block to move up and down; The first compression coil spring is interposed between the bottom base and the central block; The second compression coil spring is interposed between the central block and the first protrusion; The third compression coil spring is interposed between the central block and the first block; and Mechanism to transform the upward movement of the bottom base into the downward movement of the first block, Push the ejector shaft upward, thereby, the bottom base is pushed up, and the central block is pushed up by the spring force of the first compression coil spring, and by the third compression The spring force of the coil spring pushes up the aforementioned first block, By further pushing up the ejector shaft, the bottom base is stacked, and the mechanism is configured such that the first block is pulled down. 如申請專利範圍第12項之頂出治具,其中, 前述機構,係齒輪。For example, the ejector fixture in item 12 of the scope of patent application, of which, The aforementioned mechanism is a gear. 如申請專利範圍第12項之頂出治具,其中, 頂出治具為條狀的槓桿。For example, the ejector fixture in item 12 of the scope of patent application, of which, The ejector fixture is a bar-shaped lever. 如申請專利範圍第12~14項中任一項之頂出治具,其中, 前述塊體部,係更在前述第一塊體與前述中央塊體之間具備有第二塊體, 而且,具備有介設於前述第一塊體與前述第二塊體之間的第四壓縮線圈彈簧, 藉由前述第一塊體被上推的方式,藉由前述第四壓縮線圈彈簧的彈簧力,前述第二塊體被上推, 藉由前述第一塊體被下拉的方式,前述第一塊體會與前述第二塊體抵接且前述第二塊體被下拉。For example, the ejector fixture of any one of items 12 to 14 in the scope of patent application, of which, The block portion is further provided with a second block between the first block and the central block, Furthermore, it is provided with a fourth compression coil spring interposed between the first block and the second block, By the way the first block is pushed up, the second block is pushed up by the spring force of the fourth compression coil spring, By the way the first block is pulled down, the first block abuts the second block and the second block is pulled down. 如申請專利範圍第15項之頂出治具,其中, 前述塊體部,係更在前述第二塊體與前述中央塊體之間具備有第三塊體, 而且,具備有介設於前述第二塊體與前述第三塊體之間的第五壓縮線圈彈簧, 藉由前述第二塊體被上推的方式,藉由前述第五壓縮線圈彈簧的彈簧力,前述第三塊體被上推, 藉由前述第二塊體被下拉的方式,前述第二塊體會與前述第三塊體抵接且前述第三塊體被下拉。For example, the ejector fixture in item 15 of the scope of patent application, of which, The block portion is further provided with a third block between the second block and the central block, Furthermore, it is provided with a fifth compression coil spring interposed between the second block and the third block, By the way the second block is pushed up, the third block is pushed up by the spring force of the fifth compression coil spring, By the way the second block is pulled down, the second block abuts the third block and the third block is pulled down. 如申請專利範圍第12~14項中任一項之頂出治具,其中, 前述圓管狀之圓頂,係在其內壁具有第二突起, 藉由前述中央塊體與前述第二突起抵接的方式,前述中央塊體及前述第一塊體的上升停止。For example, the ejector fixture of any one of items 12 to 14 in the scope of patent application, of which, The aforementioned round tube dome has a second protrusion on its inner wall, As the central block abuts against the second protrusion, the ascent of the central block and the first block is stopped. 如申請專利範圍第17項之頂出治具,其中, 前述機構,係被安裝於前述中央塊體,並被配置於前述底部基座與前述第一塊體之間。For example, the ejector fixture in item 17 of the scope of patent application, of which, The aforementioned mechanism is installed on the central block and arranged between the bottom base and the first block. 如申請專利範圍第16項之頂出治具,其中, 前述中央塊體,係具有:主塊體部,抵接於前述切割帶;及主基塊部,被連接於前述主塊體部,並與前述第一壓縮線圈彈簧抵接, 前述第一塊體,係具有:第一塊體部,抵接於前述切割帶;及第一基塊部,被連接於前述第一塊體,並與前述第三壓縮線圈彈簧抵接, 前述第二塊體,係具有:第二塊體部,抵接於前述切割帶;及第二基塊部,被連接於前述第二塊體,並與前述第四壓縮線圈彈簧抵接, 前述第三塊體,係具有:第三塊體部,抵接於前述切割帶;及第三基塊部,被連接於前述第三塊體,並與前述第五壓縮線圈彈簧抵接。For example, the ejector fixture in item 16 of the scope of patent application, of which, The central block has: a main block part that abuts against the cutting tape; and a main base block part that is connected to the main block part and abuts the first compression coil spring, The first block has: a first block that abuts on the cutting tape; and a first base block that is connected to the first block and abuts on the third compression coil spring, The second block has: a second block that abuts against the cutting tape; and a second base block that is connected to the second block and abuts the fourth compression coil spring, The third block body has: a third block body portion abutting on the cutting tape; and a third base block portion connected to the third block body and abutting on the fifth compression coil spring. 如申請專利範圍第19項之頂出治具,其中, 前述圓頂板,係被螺合固定於前述圓頂,前述主塊體部,係被螺合固定於前述主基塊部,前述第一塊體部,係被螺合固定於前述第一基塊部,前述第二塊體部,係被螺合固定於前述第二基塊部,前述第三塊體部,係被螺合固定於前述第三基塊部, 前述圓頂板、前述第一塊體部、前述第二塊體部及前述第三塊體部,係可因應晶粒類型進行更換。For example, the ejector fixture in item 19 of the scope of patent application, of which, The dome plate is screwed and fixed to the dome, the main block part is screwed and fixed to the main base block, and the first block part is screwed and fixed to the first base block. Part, the second block part is screwed and fixed to the second base block part, the third block part is screwed and fixed to the third base block part, The dome plate, the first block, the second block, and the third block can be replaced according to the type of die. 一種半導體裝置之製造方法,其特徵係,具有: (a)準備如申請專利範圍第1~7項中任一項之半導體製造裝置的工程; (b)準備保持切割帶之晶圓環的工程,該切割帶,係具有晶粒; (c)準備基板的工程;及 (d)以前述頂出單元將前述晶粒頂出,且以筒夾拾取前述晶粒的工程, 前述(d)工程,係具有: (d1)將前述中央塊體與前述複數個塊體往前述切割帶頂出的工程;及 (d2)以從前述複數個塊體之最外側的塊體至最內側的塊體之順序進行下拉的工程。A method of manufacturing a semiconductor device, characterized by: (a) Prepare the process of semiconductor manufacturing equipment as in any one of items 1 to 7 of the scope of patent application; (b) The process of preparing a wafer ring for holding a dicing tape, which has dies; (c) The process of preparing the substrate; and (d) The process of ejecting the aforementioned die with the aforementioned ejection unit and picking up the aforementioned die with a collet, The aforementioned (d) project has: (d1) The process of pushing the aforementioned central block and the aforementioned plural blocks to the aforementioned cutting belt; and (d2) The process of pulling down in order from the outermost block to the innermost block of the aforementioned plural blocks. 如申請專利範圍第21項之半導體裝置之製造方法,其中,更具備有: (e)將前述晶粒接合於基板或已接合之晶粒上的工程。For example, the method of manufacturing a semiconductor device in the 21st patent application scope, which includes: (e) The process of bonding the aforementioned die to the substrate or the bonded die. 如申請專利範圍第21項之半導體裝置之製造方法,其中, 前述(d)工程,係更具有將前述拾取到之晶粒載置於中間平台的工程, 前述(e)工程,係更具有從前述中間平台拾取前述晶粒的工程。For example, the method of manufacturing a semiconductor device in the 21st patent application, in which, The aforementioned (d) process is a process of placing the picked up crystal grains on the intermediate platform. The aforementioned (e) process further has the process of picking up the aforementioned crystal grains from the aforementioned intermediate platform.
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