TWI708949B - A probe and a test device - Google Patents
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- TWI708949B TWI708949B TW108133013A TW108133013A TWI708949B TW I708949 B TWI708949 B TW I708949B TW 108133013 A TW108133013 A TW 108133013A TW 108133013 A TW108133013 A TW 108133013A TW I708949 B TWI708949 B TW I708949B
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Description
本發明是關於一種測試設備,特別是指一種用來測試半導體元件的探針及其測試裝置。The invention relates to a test equipment, in particular to a probe used for testing semiconductor components and a test device thereof.
隨著半導體技術的進步,對於測試機具精密度的要求大幅提高,在IC測試或是高頻測試的情況下測試訊號則藉由探針的傳遞,因此當傳導訊號的探針具有許多接觸點時,易產生不連續面而形成阻抗不連續,造成測試訊號反射損耗失真,並且,過多的接觸接點亦會使得探針的反應速度較慢,影響測試的正確性。With the advancement of semiconductor technology, the requirements for the precision of testing equipment have been greatly increased. In the case of IC testing or high-frequency testing, the test signal is transmitted by the probe. Therefore, when the probe that conducts the signal has many contact points , It is easy to produce discontinuities and form impedance discontinuities, causing distortion of the reflection loss of the test signal, and too many contact points will also make the probe's response speed slower and affect the accuracy of the test.
參閱圖1,傳統測試用探針1是可置換地設置於一測試座100的一探針孔101中,用以電連接一測試接點A以及一收訊接點B。該測試用探針1包括一穿設於該探針孔101的殼體件11、一上接觸件12、一下接觸件13,及一彈性元件14。該殼體件11具有一中空的底壁111、一由該底壁111向上延伸的圍繞壁112、一連接該圍繞壁112頂端的頂壁113,及一由該底壁111與圍繞壁112及頂壁113所界定的穿孔114。Referring to FIG. 1, the
其中,該上接觸件12是可上下移動地設置於該殼體件11的穿孔114上半部,並具有一抵靠部121、一由該抵靠部121向下延伸的連接部122,及 一由該抵靠部121向上延伸並穿過該頂壁113的接觸部123。該下接觸件13是可上下移動地設置於該殼體件11的穿孔114下半部,並具有一抵靠部131、一由該抵靠部131向上延伸的連接部132,及一由該抵靠部131向下延伸並穿過該底壁111的接觸部133。該彈性元件14是可壓縮形變地設置於該穿孔114內,且二端分別連接該上接觸件12的連接部122及該下接觸件13的連接部132,並用於因應該待測接點A及該收訊接點B的間距緩衝調變該上接觸件12與該下接觸件13之間的距離。Wherein, the
參閱圖2,使用時,將該測試座100設置於該收訊接點B上方,且使該下接觸件13之接觸部133接觸該收訊接點B,並使該待測接點A接觸該上接觸件12之接觸部123,依據該待測接點A及該收訊接點B的間距,該上接觸件12與該下接觸件13相配合壓縮該彈性元件14,亦使得該上接觸件12的接觸部123及該下接觸件13的接觸部133同時偏斜抵靠該殼體件11,而讓該待測接點A、該上接觸件12、該殼體件11、該下接觸件13及該收訊接點B形成電通路。Referring to FIG. 2, when in use, the
但是由於使用時,該上接觸件12、該下接觸件13及該彈性元件14是抵靠著該殼體件11運動,只依靠該上接觸件12的接觸部123及該下接觸件13的接觸部133同時偏斜抵靠該 殼體件11形成電導通,彼此間實際接觸面積並不大,且較多的接觸點會使訊號傳輸時的阻抗加大,在IC測試時容易產生雜訊導致誤判,而不利半導體測試,不僅訊號傳輸速度無法有效提升,也會因為元件表面互相摩擦而刮落的顆粒沉積於該殼體件11內,影響訊息傳遞的正確性。However, during use, the
再者,由於該上接觸件12及該下接觸件13採尖端形式設計,在與待測接點A及該收訊接點B接觸時會刮傷接觸點,即俗稱之刮板,不僅對測試設備及零件的損耗較大,不利測試製程工業化量產,也會提高生產成本。Furthermore, since the
因此,本發明之目的,即在提供一種解決上述問題的探針。Therefore, the purpose of the present invention is to provide a probe that solves the above-mentioned problems.
本發明探針,設置於一測試座的一安裝孔中,該測試座具有用以容置一晶片的一測試空間,該安裝孔連通於該測試空間,該探針是呈薄片狀並以導電材質製成,包含一基部、一緩衝部,及一接觸部。該基部是位於該安裝孔內且卡合於該測試座上,該緩衝部是位於該安裝孔內且由該基部一體向外呈螺旋狀延伸,而該接觸部是位於該安裝孔內並由該緩衝部一體延伸而與該基部互相間隔,且末端突出於該安裝孔外而伸置於該測試空間內。The probe of the present invention is arranged in a mounting hole of a test seat, the test seat has a test space for accommodating a wafer, the mounting hole is connected to the test space, and the probe is in the shape of a sheet and is electrically conductive Made of material, it includes a base, a buffer, and a contact. The base is located in the mounting hole and is engaged with the test seat, the buffer portion is located in the mounting hole and extends spirally outward from the base, and the contact portion is located in the mounting hole and is formed by The buffer part is integrally extended to be spaced apart from the base part, and the end protrudes out of the mounting hole to extend into the test space.
本發明的另一技術手段,是在於該接觸部的末端為圓弧狀。Another technical means of the present invention is that the end of the contact portion is arc-shaped.
本發明的另一技術手段,是在於該基部具有一本體區,及複數個由該本體區的末端間隔向外凸伸的卡制區。Another technical means of the present invention is that the base has a body area and a plurality of clamping areas protruding outwardly from the end of the body area.
本發明的另一技術手段,是在於所述卡制區是往不同的方向延伸。Another technical means of the present invention is that the clamping area extends in different directions.
本發明之另一目的,是在提供一種包含上述探針的測試裝置。Another object of the present invention is to provide a testing device including the above-mentioned probe.
本發明測試裝置,用以測試一晶片,包含一測試座,及至少一如前述之探針。該測試座包括一座體,及一形成於該座體上用以容置該晶片的測試空間,該座體具有至少一個安裝孔。該探針是可拆離地設置於該座體之安裝孔中,且末端突出於該安裝孔外而伸置於該測試空間,當該晶片設置於該測試空間時,會壓抵該探針突出於該測試空間的部分。The test device of the present invention is used to test a chip, and includes a test seat and at least one probe as described above. The test base includes a base and a test space formed on the base for accommodating the chip, and the base has at least one mounting hole. The probe is detachably arranged in the mounting hole of the base body, and the end protrudes out of the mounting hole to extend into the test space. When the chip is set in the test space, it will press against the probe The part that protrudes from the test space.
本發明之功效在於,該探針一體成型,縮短訊號傳遞路徑,減少因為過多元件而加大阻抗的問題,同時透過該緩衝部的結構設計,使該接觸部在受到外界壓力時可向下移動與該基部接觸而形成導通狀態,達成晶片測試功效,且特別適合高頻晶片的測試。The effect of the present invention is that the probe is integrally formed to shorten the signal transmission path and reduce the problem of increased impedance due to too many components. At the same time, through the structural design of the buffer portion, the contact portion can move downward when subjected to external pressure It is in contact with the base to form a conduction state, which achieves the chip test effect, and is particularly suitable for the test of high-frequency chips.
有關本發明之相關申請專利特色與技術內容,在以下配合參考圖式之較佳實施例的詳細說明中,將可清楚的呈現。在進行詳細說明前應注意的是,類似的元件是以相同的編號來作表示。The features and technical content of the related patent applications of the present invention will be clearly presented in the following detailed description of the preferred embodiments with reference to the drawings. Before detailed description, it should be noted that similar elements are represented by the same numbers.
參閱圖3,為本發明測試裝置的較佳實施例,用以測試一晶片4(顯示於圖5),該測試裝罝包含一測試座2,及複數間隔設置於該測試座2內的探針3。Refer to FIG. 3, which is a preferred embodiment of the test device of the present invention for testing a chip 4 (shown in FIG. 5). The test device includes a
該測試座2包括一座體21,及一形成於該座體21上的測試空間22。其中,該座體21具有複數個間隔設置的安裝孔211,於本實施例中,該測試空間22是呈矩形,而所述安裝孔211是沿著該測試空間22的其中兩側間隔排列。要特別說明的是,所述安裝孔211的排列方式,是依據待測試之晶片4的種類進行設計,於實際實施時依據該晶片4的腳位布局可以有很多的變化,圖3中所繪示的型態僅為本較佳實施例的實施態樣,不應以本較佳實施例所揭露者為限。The
參閱圖4並配合圖3,每一探針3是呈薄片狀並以導電材質製成,並包含一基部31、一緩衝部32,及一接觸部33。Referring to FIG. 4 and in conjunction with FIG. 3, each
在本較佳實施例中,該薄片狀探針之厚度是介於0.03~0.7mm,較佳的是介於0.1~0.3mm,而該探針之材質是以鈹銅、鎳鋁合金所製成。該基部31是定位於該測試座2中相對應的該安裝孔211中,更詳細地說,該基部31具有一本體區311,及複數個由該本體區311的末端間隔向外凸伸的卡制區312。如圖3中所示,所述卡制區312是由該本體區311的兩端分別向兩側及上方延伸,所以該本體區311下方平坦。藉由所述卡制區312的結構設計,使每一探針3能透過該基部31可拆離地結合於相對應的安裝孔211內,所述卡制區312分別往不同的方向延伸且卡合於該座體21上,可以增加該基部31與該座體21的結合穩定度而不會任意移動,除了避免所述探針3在測試的過程中發生搖晃或傾倒,而發生訊號不穩定或斷路的狀況,下方平坦的本體區311也能避免與後續組裝的測試基板形成刮板。In this preferred embodiment, the thickness of the thin probe is between 0.03~0.7mm, preferably between 0.1~0.3mm, and the material of the probe is made of beryllium copper, nickel aluminum alloy to make. The
參閱圖3及圖4,該緩衝部32是由該基部31一體向外呈螺旋狀延伸,於本較佳實施例中,該緩衝部32是由該基部31向外且向上呈螺旋狀延伸,形成如同蚊香的結構。而該接觸部33是由該緩衝部32一體延伸並與該基部31互相間隔,且末端突出於該安裝孔211外而伸置於該測試空間22內。要特別說明的是,該緩衝部32的螺旋狀結構,再配合該接觸部33與該基部31之間形成有間隙,使該接觸部33可以相對於該緩衝部32與該基部31進行微幅的上下擺動。Referring to FIGS. 3 and 4, the
該基部31之頂端斜向上延伸設置有一彈性支撐區313,而該接觸部33更具有一與該螺旋狀緩衝部32連接之連接區331。在本較佳實施例中,該連接區之寬度為H1,該彈性支撐區之寬度為H2,H1與H2之寬度比值為1:0.5~1.5,較佳地可為1:0.8~1.2,該連接區331與該彈性支撐區313之寬度分配比值可以確保整體探針3之剛性,並維持該螺旋狀緩衝部32與該彈性支撐區313之彈性。The top end of the
該彈性支撐區313之形狀為一長條狀,並具有一配合該接觸部33下緣底邊形狀之弧度,利用弧形設計可以使該接觸部33下壓時與該彈性支撐區313得到較大的接觸面積。當H2之寬度太厚會使該彈性支撐區313失去彈性,當H2之寬度太薄則會影響電訊號之傳遞,故須整體考量。值得一提的是,本發明揭露之彈性支撐區313形狀為一弧狀長條,實際實施時也可以是圓形或是其他幾何形狀,不應以此為限。The shape of the
參閱圖5並配合圖3,為本較佳實施例之使用說明。當本較佳實施例要進行晶片4之檢測時,是將該晶片4放置於該測試座2之該測試空間22內,使得該晶片4底部的接點分別與所述探針3的接觸部33的末端接觸。由於該晶片4底部的接點形態,會依晶片4的種類而有所變化,於圖5中未具體繪示。Refer to FIG. 5 in conjunction with FIG. 3, which is an explanation of the preferred embodiment. When the
所述探針3的接觸部33的末端為圓弧狀,相較於習知尖點狀的結構,可以增加接觸面積,同時也能避免在測試的過程中,對該晶片4的接點造成損傷。該晶片4在放置於該測試空間22內的過程中,會逐漸地下壓所述探針3的接觸部33的末端,當該晶片4完全確實定位於該測試空間22內時,會如圖5所示,所述探針3的接觸部33的末端也會被向下壓抵而與該基部31之彈性支撐區313碰觸,此時,測試訊號會以最短距離經由該接觸部33直接傳遞至下方的基部31形成上下訊號導通的狀態,而能使訊號進行傳遞以測試該晶片4。The end of the
由於所述探針3是以導電材質製成,通常為鈹銅金屬材質,當製成薄片狀時可以產生些微的可撓性。因此,當所述探針3的接觸部33的末端被向下壓抵時,除了連接的緩衝部32會累積一彈性回復力之外,延伸設置的彈性支撐區313會提供一些彈性支撐,確保該接觸部33下壓時可以與該彈性支撐區313接觸,藉由該緩衝部32之彈性回復設計可避免該探針3之剛性結構被破壞,當該晶片4測試完畢而由該測試空間22移除時,上述緩衝部32釋放的彈性回復力就會讓所述探針3的接觸部33回復到如圖3所示的位置,能再次進行下一次的測試。Since the
綜上所述,本發明測試裝置所使用的探針3,採用一體成型的設計,提升組裝便利性並降低成本,並且縮短訊號傳遞路徑。同時,透過該探針3之該緩衝部32的結構設計,使該接觸部33具有微幅的移動餘裕,讓該接觸部33在受到該晶片4下壓的壓力時可向下移動與該基部31之彈性支撐區313接觸而形成導通狀態,達成該晶片4測試功效,且該接觸部33的末端呈圓弧狀,不但能增加接觸面積,也可避免損傷上方的晶片4接點,而該基部31之底部平坦,且受該卡制區312之限位,所以也不會任意移動而刮傷下方的基板接點。再者,該探針3為一體成型的結構亦能有效減少因為過多元件而加大阻抗的問題,也可以避免雜訊的產生,而能特別適用於高頻晶片的測試。In summary, the
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the foregoing are only preferred embodiments of the present invention, and should not be used to limit the scope of implementation of the present invention, that is, simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the description of the invention, All are still within the scope of the invention patent.
100:測試座 101:探針孔 1:測試用探針 11:殼體件 111:底壁 112:圍繞壁 113:頂壁 114:穿孔 12:上接觸件 121:抵靠部 122:連接部 123:接觸部 13:下接觸件 131:抵靠部 132:連接部 133:接觸部 14:彈性元件 A:測試接點 B:收訊接點 2:測試座 21:座體 211:安裝孔 22:測試空間 3:探針 31:基部 311:本體區 312:卡制區 313:彈性支撐區 32:緩衝部 33:接觸部 331:連接區 4:晶片 H1:連接區之寬度 H2:彈性支撐區之寬度 100: test seat 101: Probe hole 1: Test probe 11: Shell parts 111: bottom wall 112: around the wall 113: top wall 114: Piercing 12: Upper contact 121: abutment 122: connection part 123: Contact 13: Lower contact 131: Abutment Department 132: Connection 133: Contact 14: Elastic element A: Test contact B: Receiving contact 2: Test seat 21: Seat 211: mounting hole 22: test space 3: Probe 31: Base 311: Body area 312: Card System 313: Elastic Support Area 32: Buffer 33: Contact 331: connection area 4: chip H1: The width of the connecting area H2: width of elastic support area
圖1是一側視示意圖,為傳統測試用探針的結構; 圖2是一側視示意圖,說明圖1的使用狀態; 圖3是一局部立體示意圖,為本發明測試裝置之較佳實施例; 圖4是一立體圖,說明圖3中一探針的結構;及 圖5是一局部立體示意圖,輔助說明圖3的使用狀態。 Figure 1 is a schematic side view showing the structure of a traditional test probe; Figure 2 is a schematic side view illustrating the state of use of Figure 1; Figure 3 is a partial three-dimensional schematic diagram of a preferred embodiment of the testing device of the present invention; Figure 4 is a perspective view illustrating the structure of a probe in Figure 3; and Fig. 5 is a partial three-dimensional schematic diagram to assist in explaining the use state of Fig. 3.
2:測試座 2: Test seat
21:座體 21: Seat
211:安裝孔 211: mounting hole
22:測試空間 22: test space
3:探針 3: Probe
31:基部 31: Base
311:本體區 311: Body area
312:卡制區 312: Card System
313:彈性支撐區 313: Elastic Support Area
32:緩衝部 32: Buffer
33:接觸部 33: Contact
331:連接區 331: connection area
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TW108133013A TWI708949B (en) | 2019-09-12 | 2019-09-12 | A probe and a test device |
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TW (1) | TWI708949B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113607990A (en) * | 2021-07-24 | 2021-11-05 | 深圳市欧米加智能科技有限公司 | Micro blade needle with low contact resistance and testing device with micro blade needle |
CN113866464A (en) * | 2021-09-22 | 2021-12-31 | 深圳凯智通微电子技术有限公司 | Probe and integrated circuit test equipment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200528725A (en) * | 2003-12-12 | 2005-09-01 | Sumitomo Electric Industries | Spiral terminal and method of manufacturing the same |
WO2006114828A1 (en) * | 2005-04-06 | 2006-11-02 | Advantest Corporation | Socket and electronic component testing apparatus using such socket |
JP2007240403A (en) * | 2006-03-10 | 2007-09-20 | Advanced Systems Japan Inc | Spiral probe |
TW201512666A (en) * | 2013-07-11 | 2015-04-01 | Johnstech Int Corp | On-center electrically conductive pins for integrated testing |
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2019
- 2019-09-12 TW TW108133013A patent/TWI708949B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200528725A (en) * | 2003-12-12 | 2005-09-01 | Sumitomo Electric Industries | Spiral terminal and method of manufacturing the same |
WO2006114828A1 (en) * | 2005-04-06 | 2006-11-02 | Advantest Corporation | Socket and electronic component testing apparatus using such socket |
JP2007240403A (en) * | 2006-03-10 | 2007-09-20 | Advanced Systems Japan Inc | Spiral probe |
TW201512666A (en) * | 2013-07-11 | 2015-04-01 | Johnstech Int Corp | On-center electrically conductive pins for integrated testing |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113607990A (en) * | 2021-07-24 | 2021-11-05 | 深圳市欧米加智能科技有限公司 | Micro blade needle with low contact resistance and testing device with micro blade needle |
CN113607990B (en) * | 2021-07-24 | 2024-01-16 | 深圳市欧米加智能科技有限公司 | Miniature blade needle with low contact resistance and testing device with miniature blade needle |
CN113866464A (en) * | 2021-09-22 | 2021-12-31 | 深圳凯智通微电子技术有限公司 | Probe and integrated circuit test equipment |
Also Published As
Publication number | Publication date |
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TW202111330A (en) | 2021-03-16 |
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